WO2012115392A3 - 양면 구조를 가지는 태양전지 및 이의 제조방법 - Google Patents

양면 구조를 가지는 태양전지 및 이의 제조방법 Download PDF

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Publication number
WO2012115392A3
WO2012115392A3 PCT/KR2012/001188 KR2012001188W WO2012115392A3 WO 2012115392 A3 WO2012115392 A3 WO 2012115392A3 KR 2012001188 W KR2012001188 W KR 2012001188W WO 2012115392 A3 WO2012115392 A3 WO 2012115392A3
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solar cell
manufacturing same
hole
transport layer
double
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PCT/KR2012/001188
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English (en)
French (fr)
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WO2012115392A2 (ko
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김태환
한기봉
정재훈
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Industry University Cooperation Foundation IUCF HYU
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Industry University Cooperation Foundation IUCF HYU
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Priority to US14/001,311 priority Critical patent/US9647163B2/en
Publication of WO2012115392A2 publication Critical patent/WO2012115392A2/ko
Publication of WO2012115392A3 publication Critical patent/WO2012115392A3/ko
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/148—Double-emitter photovoltaic cells, e.g. bifacial photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433—Quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1437—Quantum wires or nanorods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/152—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

투명한 기판의 양면에 나노 구조를 가지는 태양전지 및 이의 제조방법이 개시된다. 기판을 중심으로 서로 대향하며, 전자를 수송하기 위한 구조는 산화아연 나노선으로 형성된다. 또한, 단파장의 빛을 흡수하고, 발생된 정공을 전달하기 위해 CIS 나노입자를 이용한 정공전달층이 형성된다. CIS 나노입자로 구성된 정공전달층과 대향하는 측에는 비교적 장파장의 빛을 흡수하기 위해 CIGS 나노입자를 포함하는 정공전달층이 형성된다.
PCT/KR2012/001188 2011-02-24 2012-02-17 양면 구조를 가지는 태양전지 및 이의 제조방법 Ceased WO2012115392A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/001,311 US9647163B2 (en) 2011-02-24 2012-02-17 Solar cell having a double-sided structure, and method for manufacturing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0016526 2011-02-24
KR1020110016526A KR101208272B1 (ko) 2011-02-24 2011-02-24 양면 구조를 가지는 태양전지 및 이의 제조방법

Publications (2)

Publication Number Publication Date
WO2012115392A2 WO2012115392A2 (ko) 2012-08-30
WO2012115392A3 true WO2012115392A3 (ko) 2012-11-15

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PCT/KR2012/001188 Ceased WO2012115392A2 (ko) 2011-02-24 2012-02-17 양면 구조를 가지는 태양전지 및 이의 제조방법

Country Status (3)

Country Link
US (1) US9647163B2 (ko)
KR (1) KR101208272B1 (ko)
WO (1) WO2012115392A2 (ko)

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DE102013221758B4 (de) * 2013-10-25 2019-05-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtungen zur aussendung und/oder zum empfang elektromagnetischer strahlung und verfahren zur bereitstellung derselben
JP6441750B2 (ja) * 2014-06-24 2018-12-19 京セラ株式会社 量子ドット型太陽電池
JP6321487B2 (ja) * 2014-08-11 2018-05-09 京セラ株式会社 量子ドット太陽電池
JP6455915B2 (ja) * 2014-08-29 2019-01-23 国立大学法人電気通信大学 太陽電池
KR102310516B1 (ko) * 2014-12-19 2021-10-13 한국전기연구원 누설 전류를 저감한 비정질 셀레늄 기반 Ｘ－ｒａｙ 디텍터
JP6599729B2 (ja) * 2015-10-27 2019-10-30 京セラ株式会社 光電変換装置
KR101883951B1 (ko) 2017-01-23 2018-07-31 영남대학교 산학협력단 양면수광형 ｃｉｇｓ계 태양전지 셀 및 상기 양면수광형 ｃｉｇｓ계 태양전지 셀의 제조 방법
KR102456146B1 (ko) * 2020-10-30 2022-10-19 한국과학기술원 비-화학량론적 비결정질 금속산화물 나노구조체 제조 방법
CN112786775B (zh) * 2021-01-04 2022-11-11 国网内蒙古东部电力有限公司电力科学研究院 无源自供能用压电纳米阵列传感器及其制备方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106663705A (zh) * 2014-09-24 2017-05-10 京瓷株式会社 光电变换装置以及光电变换模块
CN106663705B (zh) * 2014-09-24 2018-11-06 京瓷株式会社 光电变换装置以及光电变换模块

Also Published As

Publication number Publication date
KR20120097140A (ko) 2012-09-03
US20130327385A1 (en) 2013-12-12
WO2012115392A2 (ko) 2012-08-30
US9647163B2 (en) 2017-05-09
KR101208272B1 (ko) 2012-12-10

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