WO2012121972A3 - Stabilisation de croissance de tranche en couche - Google Patents

Stabilisation de croissance de tranche en couche Download PDF

Info

Publication number
WO2012121972A3
WO2012121972A3 PCT/US2012/027280 US2012027280W WO2012121972A3 WO 2012121972 A3 WO2012121972 A3 WO 2012121972A3 US 2012027280 W US2012027280 W US 2012027280W WO 2012121972 A3 WO2012121972 A3 WO 2012121972A3
Authority
WO
WIPO (PCT)
Prior art keywords
sheet wafer
wafer growth
crucible
interior chamber
growth stabilization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2012/027280
Other languages
English (en)
Other versions
WO2012121972A2 (fr
Inventor
Brian D. Kernan
Weidong Huang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Evergreen Solar Inc
Original Assignee
Evergreen Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evergreen Solar Inc filed Critical Evergreen Solar Inc
Publication of WO2012121972A2 publication Critical patent/WO2012121972A2/fr
Anticipated expiration legal-status Critical
Publication of WO2012121972A3 publication Critical patent/WO2012121972A3/fr
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

La présente invention a trait à un appareil permettant de former une tranche en couche, lequel appareil est doté d'une enceinte qui forme une chambre intérieure et d'un creuset qui se trouve à l'intérieur de la chambre intérieure et qui est doté d'une surface supérieure. Le creuset est configuré de manière à contenir un volume de matériau fondu. L'appareil est également équipé d'un guide de tranche qui est espacé de la surface supérieure du creuset et qui se trouve à l'intérieur de la chambre intérieure. Le guide de tranche forme un canal permettant de faire passer une tranche en couche en croissance.
PCT/US2012/027280 2011-03-04 2012-03-01 Stabilisation de croissance de tranche en couche Ceased WO2012121972A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161449150P 2011-03-04 2011-03-04
US61/449,150 2011-03-04

Publications (2)

Publication Number Publication Date
WO2012121972A2 WO2012121972A2 (fr) 2012-09-13
WO2012121972A3 true WO2012121972A3 (fr) 2015-06-11

Family

ID=46798706

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/027280 Ceased WO2012121972A2 (fr) 2011-03-04 2012-03-01 Stabilisation de croissance de tranche en couche

Country Status (2)

Country Link
TW (1) TW201300583A (fr)
WO (1) WO2012121972A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6064596B2 (ja) * 2012-02-28 2017-01-25 三菱マテリアル株式会社 鋳造装置及び鋳造方法
KR102569103B1 (ko) * 2020-11-18 2023-08-23 주식회사 유앤에스에너지 전극용 집전체

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4550655A (en) * 1983-08-01 1985-11-05 Franz Haas Waffelmaschinen Industriegesellschaft M.B.H. Apparatus for making wafer blocks
US6189591B1 (en) * 1997-11-19 2001-02-20 Shibaura Mechatronics Corporation Wafer sheet expanding apparatus and pellet bonding apparatus using thereof
US20050032391A1 (en) * 1998-03-13 2005-02-10 Semitool, Inc. Method for processing a semiconductor wafer
US7407550B2 (en) * 2002-10-18 2008-08-05 Evergreen Solar, Inc. Method and apparatus for crystal growth
US20100055398A1 (en) * 2008-08-29 2010-03-04 Evergreen Solar, Inc. Single-Sided Textured Sheet Wafer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4550655A (en) * 1983-08-01 1985-11-05 Franz Haas Waffelmaschinen Industriegesellschaft M.B.H. Apparatus for making wafer blocks
US6189591B1 (en) * 1997-11-19 2001-02-20 Shibaura Mechatronics Corporation Wafer sheet expanding apparatus and pellet bonding apparatus using thereof
US20050032391A1 (en) * 1998-03-13 2005-02-10 Semitool, Inc. Method for processing a semiconductor wafer
US7407550B2 (en) * 2002-10-18 2008-08-05 Evergreen Solar, Inc. Method and apparatus for crystal growth
US20100055398A1 (en) * 2008-08-29 2010-03-04 Evergreen Solar, Inc. Single-Sided Textured Sheet Wafer

Also Published As

Publication number Publication date
WO2012121972A2 (fr) 2012-09-13
TW201300583A (zh) 2013-01-01

Similar Documents

Publication Publication Date Title
EP3456860A3 (fr) Appareil de croissance épitaxiale
MY164023A (en) Drawer frame having a tilt adjustment
PH12013502172A1 (en) Side feed system for czochralski growth of silicon ingots
WO2012134092A3 (fr) Procédé de fabrication de lingot monocristallin et lingot monocristallin et tranche ainsi fabriqués
WO2012019103A3 (fr) Système et appareil de traitement cellulaire
WO2014060715A3 (fr) Dispositif de culture de plantes
MY163634A (en) System and method for growing plants
WO2010013746A1 (fr) Appareil de formation de film de dépôt et procédé de formation de film de dépôt
PL394857A1 (pl) Sposób amonotermalnego wytwarzania kryształów ciągnionych azotku galu na dużą skalę
WO2013002539A3 (fr) Appareil et procédé de croissance de monocristal de carbure de silicium
IN2015DN02376A (fr)
JP2013212952A5 (fr)
EP4379087A3 (fr) Appareil et procédés de dépôt
IL287931A (en) Bioreactors for the growth of microorganisms
WO2012173438A3 (fr) Appareil de fabrication d'un lingot
MX348148B (es) Metodo para promover el crecimiento de plantas.
EP2995704A3 (fr) Monocristal de sic et son procédé de production
WO2012121972A3 (fr) Stabilisation de croissance de tranche en couche
SG11202104812PA (en) Bioreactors for growing micro-organisms
WO2013019026A3 (fr) Appareil de fabrication de lingot
WO2012177012A3 (fr) Appareil de fabrication de lingot
WO2012169828A3 (fr) Appareil permettant la fabrication d'un lingot
GB201915562D0 (en) Apparatus for the adjustment of spacing between growing plants
JO2812B1 (en) A method of obtaining the aggregate V crystal form of agomelatine
EP2722420A3 (fr) Équipement et procédé de production d'un composé polycristal et procédé de croissance d'un composé de monocristal

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12755130

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 2013556859

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: MX/A/2013/010143

Country of ref document: MX

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: JP

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 17/12/2013).

122 Ep: pct application non-entry in european phase

Ref document number: 12755130

Country of ref document: EP

Kind code of ref document: A2