WO2012122851A1 - 磁传感器芯片以及磁传感器 - Google Patents

磁传感器芯片以及磁传感器 Download PDF

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Publication number
WO2012122851A1
WO2012122851A1 PCT/CN2012/000122 CN2012000122W WO2012122851A1 WO 2012122851 A1 WO2012122851 A1 WO 2012122851A1 CN 2012000122 W CN2012000122 W CN 2012000122W WO 2012122851 A1 WO2012122851 A1 WO 2012122851A1
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Prior art keywords
sensitive film
magnetic
magnetic sensitive
sensor chip
film
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PCT/CN2012/000122
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English (en)
French (fr)
Inventor
曲炳郡
熊伟
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Priority to CA2829680A priority Critical patent/CA2829680C/en
Priority to CN201280012873.3A priority patent/CN103562739B/zh
Priority to EP12756955.6A priority patent/EP2685272A4/en
Priority to KR1020137025801A priority patent/KR101496078B1/ko
Priority to US14/004,255 priority patent/US9588192B2/en
Publication of WO2012122851A1 publication Critical patent/WO2012122851A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/04—Measuring direction or magnitude of magnetic fields or magnetic flux using the flux-gate principle
    • G01R33/05—Measuring direction or magnitude of magnetic fields or magnetic flux using the flux-gate principle in thin-film element
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Definitions

  • the invention belongs to the technical field of micro-nano sensors, and in particular relates to a magnetic sensor chip and a magnetic sensor including the same. Background technique
  • a magnetic sensor is a device that converts a change in magnetic properties of a sensitive component caused by a magnetic field, a current, a stress strain, a temperature, a light, or the like into an electrical signal to measure a related physical quantity, particularly a small physical quantity, which has a high sensitivity compared to a conventional sensor. Therefore, it is widely used in aviation, aerospace, geological prospecting, medical imaging, information gathering and military.
  • magnetic sensor chips are the core of magnetic sensors due to their low power consumption, small size, high sensitivity, easy integration, low cost, fast response, high resolution, good stability and high reliability.
  • the use of components and magnetic sensor chips has made magnetic sensors a promising application in the fields of magnetic information storage, automation and Internet of Things.
  • Fig. 1 shows a structural view of a conventional magnetic sensor chip.
  • the magnetic sensor chip includes a magnetic sensitive film 2 and a conductor 3 which are disposed at both ends of the magnetic sensitive film 2 for electrical connection with other components.
  • the demagnetizing field of the magnetic sensitive film 2 is large, and therefore, the hysteresis phenomenon of the magnetic sensor chip is severe.
  • Fig. 2 is a graph showing the hysteresis loop of a conventional magnetic sensor chip, in which the horizontal axis represents the applied magnetic field strength (H) and the vertical axis represents the resistance value (R) of the magnetic sensor chip.
  • the width of the hysteresis loop of the magnetic sensor chip is large, that is, the hysteresis of the magnetic sensor chip is large, which results in low sensitivity of the magnetic sensor chip. Summary of the invention
  • the technical problem to be solved by the present invention is to provide a magnetic sensor chip for reducing the above-mentioned defects of the magnetic sensor chip, which can reduce or even eliminate the hysteresis phenomenon, thereby improving the sensitivity of the magnetic sensor chip.
  • the present invention also provides a magnetic sensor having high sensitivity.
  • the present invention provides a magnetic sensor chip including a magnetic sensitive film, and n suppressing units capable of achieving a segmentation suppression demagnetizing field are disposed at intervals in the longitudinal direction of the magnetic sensitive film, wherein 11 is an integer of 2 .
  • the suppressing unit is a slit
  • the magnetic sensitive film is divided into n+1-segment short magnetic sensitive films by the slit; the slit completely penetrates the thickness direction and the width direction of the magnetic sensitive film, and
  • the slit position is provided with an electrical connection body electrically connecting two adjacent short magnetic sensitive films; or the slit is completely penetrated in the thickness direction of the magnetic sensitive film, and in the width direction of the magnetic sensitive film Partially penetrating; or the slit is partially penetrated in the thickness direction of the magnetic sensitive film and completely penetrated in the width direction of the magnetic sensitive film; or the slit is partially in the thickness direction and the width direction of the magnetic sensitive film Through.
  • the shape of the projection of the slit in the horizontal plane is a rectangle, a circle, an ellipse, a dumbbell, a spindle, a drum, a parallelogram, a triangle or a polygon.
  • the slit is filled with an insulating material or a conductive material.
  • the suppression unit is a suppression conductor made of a conductive material, and the suppression conductor is disposed on an upper surface and/or a lower surface and/or an inner side and/or an outer side of the magnetic sensitive film, and is disposed in the Power connection outside the magnetically sensitive film.
  • an insulator is further disposed between the suppression conductor and the magnetic sensitive film, and the suppression conductor covers the insulator to wrap the surface of the insulator not in contact with the magnetic sensitive film; or
  • the surface of the suppression conductor that is not in contact with the magnetic sensitive film is further provided with an insulator that covers the suppression conductor to wrap the surface of the suppression conductor that is not in contact with the magnetic sensitive film.
  • the suppressing unit is a heating body, and the heating body is disposed on an upper surface and/or a lower surface and/or an inner side and/or an outer side of the magnetic sensitive film.
  • a heat insulator is further disposed on an outer side of the heating body, and the heat insulator covers the heating body to concentrate heat generated by the heating body onto the magnetic sensitive film.
  • the suppressing unit is a hard magnetic body, and the hard magnetic body is disposed on an inner side and/or an outer side and/or an upper surface and/or a lower surface of the magnetic sensing film.
  • the hard magnetic body abuts or is spaced apart from the magnetic sensitive film.
  • the suppressing unit is a cumbersome segment disposed inside the magnetic sensitive film, and the magnetic sensitive film is divided into n+1-segment short magnetic sensitive films by the doping segments; a thickness direction and a width direction of the magnetic sensitive film; or the doped segment is completely penetrated in a thickness direction of the magnetic sensitive film, and partially penetrates in a width direction of the magnetic sensitive film; or the doped segment is in the The thickness direction of the magnetic sensitive film is partially penetrated, and is completely penetrated in the width direction of the magnetic sensitive film; or the doped portion is partially penetrated in both the thickness direction and the width direction of the magnetic sensitive film.
  • the dopant in the doping section is carbon, nitrogen, oxygen, boron, antimony, phosphorus, aluminum, zinc or tin.
  • the magnetic sensitive film is an anisotropic magnetoresistive film, a giant magnetoresistance film, and a tunnel magnetoresistive film.
  • a protective film is further included on the surface of the magnetic sensor chip, and the protective film is a silicon dioxide film, an aluminum oxide film, a silicon nitride film, a ceramic film, a polyimide film or an epoxy resin film.
  • the present invention also provides a magnetic sensor comprising a magnetic sensor chip, the magnetic sensor chip using the magnetic sensor chip provided by the present invention.
  • the present invention also provides a magnetic sensor including the present invention.
  • the magnetic sensor chip can improve the sensitivity of the magnetic sensor by using the magnetic sensor chip. Compared with the magnetic sensor using the conventional magnetic sensor chip, the output voltage of the magnetic sensor provided by the present invention is improved by 1 under the same working conditions. Times, up to 600mV, the sensitivity is increased by 3dB.
  • Figure 1 is a structural view of a conventional magnetic sensor chip
  • FIG. 2 is a graph of a hysteresis loop of a conventional magnetic sensor chip
  • FIG. 3 is a partial structural view of a magnetic sensor chip according to Embodiment 1 of the present invention
  • FIG. 4 is a structural view of a slit partially penetrating in a width direction of a magnetic sensitive film
  • FIG. 5 is a structure of a magnetic sensor chip according to Embodiment 2 of the present invention
  • FIG. 6 is a structural diagram of a magnetic sensor chip according to Embodiment 3 of the present invention.
  • FIG. 7 is a structural diagram of a magnetic sensor chip according to Embodiment 4 of the present invention.
  • FIG. 8 is a structural diagram of a magnetic sensor chip according to Embodiment 5 of the present invention.
  • Fig. 9 is a graph showing hysteresis loops of the magnetic sensor chip according to the first embodiment. detailed description
  • the magnetic sensor chip provided by the present invention comprises a substrate 1, a magnetic sensitive film 2 and a conductor 3, and the conductor 3 is disposed at both ends of the magnetic sensitive film 2 for electrically connecting with other components (such as conductive circuits) disposed outside the magnetic sensitive film 2. connection.
  • n suppressing units capable of achieving a segmentation suppression demagnetizing field are provided, wherein n is an integer of 2.
  • the magnetic sensitive film 2 may be an anisotropic magnetoresistive film, a giant magnetoresistive film, or a tunnel magnetoresistive film
  • the suppressing unit may be a slit, a suppressing conductor, a heating body, a hard magnet or a doped segment.
  • a protective film may also be formed on the surface of the magnetic sensor chip (excluding the conductor 3) to prevent the magnetic sensitive film 2 and/or the electrical connector from being corroded, oxidized or short-circuited.
  • Protective film can It is a silicon dioxide film, an aluminum oxide film, a silicon nitride film, a ceramic film, a polyimide film, or an epoxy resin film.
  • the substrate 1 may be an oxidized silicon wafer or other material capable of functioning as a sensor substrate such as glass.
  • the upper surface of the magnetic sensitive film referred to in the present invention refers to the upward side of the magnetic sensitive film when the substrate is horizontally placed, and correspondingly, the downward side of the magnetic sensitive film is the lower surface.
  • the side where the conductor 3 protrudes is the inner side of the magnetic sensitive film, and the side corresponding to the outer side is the outer side.
  • FIG. 3 is a structural diagram of a magnetic sensor chip according to Embodiment 1 of the present invention.
  • the magnetic sensor chip includes a substrate 1, a magnetic sensitive film 2, a conductor 3, and a protective film (not shown).
  • the conductor 3 is disposed at both ends of the magnetic sensitive film 2, and is disposed on the magnetic sensitive film.
  • Other components outside 2 are electrically connected.
  • the suppressing unit is a slit 4 which is completely penetrated in the thickness direction and the width direction of the magnetic sensitive film 2, and an electrical connector electrically connecting two adjacent short magnetic sensitive films 21 is provided inside the slit 4. 41.
  • the magnetic sensitive film 2 is divided into n+1-stage short magnetic sensitive films 21 by slits 4.
  • the electrical connector 41 is made of a conductive material. As shown in FIG. 3, the electrical connector 41 may completely fill the slit 4, or may only fill a portion of the slit 4 or the slit 4 near the upper surface region of the short magnetic sensitive film 21, such as filling only the slit 4 near the short magnetic sensitive film 21.
  • the upper surface area is such that an air gap is formed in the slit 4. It is not difficult to understand that the electrical connector 41 may also fill only the slit 4 near the lower surface region, the inner region or the outer region of the short magnetic sensitive film 21.
  • the shape of the projection of the slit 4 in the horizontal plane may be rectangular, circular, elliptical, dumbbell-shaped, spindle-shaped, drum-shaped, parallelogram, triangular or polygonal.
  • the slit 4 may also partially penetrate in the thickness direction and/or the width direction of the magnetic sensitive film 2, SP, which penetrates completely in the thickness direction of the magnetic sensitive film 2, and the width of the magnetic sensitive film 2 a direction portion penetrates; or the slit penetrates partially in the thickness direction of the magnetic sensitive film 2, and in the width direction of the magnetic sensitive film 2 It is completely penetrated; or the slit is partially penetrated in both the thickness direction and the width direction of the magnetic sensitive film 2.
  • the slit 4 is partially penetrated only in the thickness direction and/or the width direction of the magnetic sensitive film 2, the magnetic sensitive film 2 has been kept electrically connected, and therefore, it is no longer necessary to fill the slit 4 with a conductive material.
  • the slit 4 when the slit 4 is partially penetrated in the thickness direction and/or the width direction of the magnetic sensitive film 2, the slit 4 cannot be filled with a conductive material, and filling the slit 4 with a conductive material can also achieve the object of the present invention. That is, the purpose of the present invention can be achieved by filling the slit 4 with an insulating material or a conductive material or not.
  • Fig. 4 is a structural view showing a portion in which the slit penetrates in the width direction of the magnetic sensitive film 2. As shown in Fig. 4, the slit 4 is provided in the middle of the width direction of the magnetic sensitive film 2.
  • the magnetic sensitive effect of the magnetic sensitive film portion at the position where the slit is located is suppressed by the slit to suppress the demagnetizing field of the magnetic sensitive film 2 in stages, thereby reducing or even eliminating the hysteresis of the magnetic sensitive film 2.
  • the phenomenon further increases the sensitivity of the magnetic sensor chip.
  • FIG. 5 is a structural diagram of a magnetic sensor chip according to Embodiment 2 of the present invention (conductors 3 for electrical connection at both ends of the chip are not shown in the figure).
  • the suppressing unit is a suppressing conductor 6 made of a conductive material.
  • the suppressing conductor 6 is disposed on the upper surface of the magnetic sensitive film 2 and is connected to a power source provided outside the magnetic sensitive film.
  • the suppression conductor 6 may penetrate all of the width of the magnetically sensitive film or only the portion of the width of the magnetically sensitive film.
  • the suppression conductor 6 may also be disposed on the lower surface and/or the inner side and/or the outer side of the magnetic sensitive film 2.
  • the suppression conductor 6 When the suppression conductor 6 is electrically connected to the power source, that is, when the current is introduced into the conductor 6, the magnetic sensitivity effect of the portion of the magnetic sensitive film opposite to the suppression conductor 6 is weakened, thereby realizing the demagnetizing field of the magnetic sensitive film 2. Segment suppression, thereby reducing or even eliminating the hysteresis of the magnetic sensitive film 2, thereby improving the sensitivity of the magnetic sensor chip.
  • An insulator 61 may be disposed between the suppression conductor 6 and the magnetic sensitive film 2, that is, the insulator 61 is disposed on the surface of the magnetic sensitive film 2, and the suppression conductor 6 covers the insulator 61, that is, the insulator 61 is sandwiched between the suppression conductor 6 and Between the magnetic sensitive films 2; or an insulator 61 is provided on the surface of the suppression conductor 6, and the insulator 61 suppresses the conductor covering, that is, the suppression conductor 6 is sandwiched between the insulator 61 and the magnetic sensitive film 2.
  • FIG. 6 is a structural diagram of a magnetic sensor chip according to a third embodiment of the present invention (the conductors 3 for electrical connection at both ends of the chip are not shown in the figure).
  • the suppressing unit is a heating body 7, and a heating body is disposed on the upper surface of the magnetic sensitive film 2.
  • the heating body 7 may be disposed on the upper surface and/or the lower surface and/or the inner side and/or the outer side of the magnetic sensitive film 2.
  • the heating body 7 can suppress the magnetic sensitive effect of the magnetic sensitive film portion opposite thereto, thereby realizing the demagnetizing field segmentation suppression of the magnetic sensitive film 2, thereby reducing, or even eliminating, the hysteresis of the magnetic sensitive film 2.
  • the sensitivity of the magnetic sensor chip is improved.
  • a heat insulator 71 is provided on the outer side of the heating body 7, and the heat insulator 71 covers the heating body 7, that is, the heating body 7 is sandwiched between the heat insulator 71 and the magnetic sensitive film 2.
  • the heat insulator 71 the heat generated by the heating body 7 can be concentrated to the magnetic sensitive film 2, and the heat sensitive effect can be suppressed while suppressing the magnetic sensitivity effect of the magnetic sensitive film portion opposite to the heating body.
  • FIG. 7 is a structural diagram of a magnetic sensor chip according to Embodiment 4 of the present invention (conductors 3 for electrical connection at both ends of the chip are not shown in the figure).
  • the suppressing unit is a hard magnet 8 disposed on the inner side and the outer side of the magnetic sensitive film 2.
  • the hard magnetic body 8 may also be disposed inside or outside the magnetic sensitive film 2, or on the upper surface and/or the lower surface of the magnetic sensitive film. Further, the hard magnet 8 may abut the magnetic sensitive film 2 or be spaced apart from the magnetic sensitive film 2.
  • the hard magnet 8 can suppress the magnetic sensitive effect of the magnetic sensitive film portion opposite thereto, realizing the magnetic sensitive thin
  • the segmentation suppression of the demagnetizing field of the film 2 reduces or even eliminates the hysteresis of the magnetic sensitive film 2, thereby improving the sensitivity of the magnetic sensor chip.
  • Embodiment 5 When the hard magnetic material 8 is disposed on the lower surface of the magnetic sensitive film 2, in order to fabricate the magnetic sensitive film 2, it is necessary to fill the concave portion between the adjacent hard magnetic bodies 8 with a filler to obtain the magnetic sensitive film 2. Flat surface. Embodiment 5
  • Figure 8 is a structural view of a magnetic sensor chip according to a fifth embodiment of the present invention (conductors 3 for electrical connection at both ends of the chip are not shown in the figure).
  • the suppressing unit is a doping section 9 disposed inside the magnetic sensitive film 2.
  • the doped segment completely penetrates the thickness direction and the width direction of the magnetic sensitive film 2; or the doped segment penetrates completely in the thickness direction of the magnetic sensitive film 2, and partially penetrates in the width direction; or the doping
  • the interdigitated portion penetrates partially in the thickness direction of the magnetic sensitive film 2 and penetrates completely in the width direction; or the doped portion partially penetrates in the thickness direction and the width direction of the magnetic sensitive film 2.
  • the dopant in the doped segment is carbon, nitrogen, oxygen, boron, germanium, phosphorus, aluminum, zinc or tin.
  • the doping method may be thermal diffusion, ion implantation, plasma doping, projection gas immersion laser doping, vapor phase doping, ion showering, metal ion miscellaneous or anionic doping.
  • FIG. 9 is a graph showing hysteresis loops of the magnetic sensor chip according to the first embodiment.
  • the horizontal axis represents the applied magnetic field strength (H)
  • the vertical axis represents the magnetization (M).
  • H applied magnetic field strength
  • M magnetization
  • the hysteresis loops of the magnetic sensor chip substantially coincide, that is, the coercive force of the magnetic sensor chip is close to zero. Therefore, the sensitivity of the magnetic sensor chip provided in the first embodiment is high.
  • the graph of the hysteresis loop of the magnetic sensor chip of the second embodiment to the fifth embodiment is basically the same as that of Fig. 9.
  • the magnetic sensor chip provided by the present invention can cause the magnetic sensitive film 2 to achieve segmentation suppression of the demagnetizing field by means of a suppressing unit disposed in the longitudinal direction of the magnetic sensitive film 2, thereby reducing, or even eliminating The hysteresis of the magnetic sensitive film 2 further increases the sensitivity of the magnetic sensor chip.
  • the present invention also provides a magnetic sensor including a magnetic sensor A magnetic sensor chip according to any one of Embodiments 1 to 5, wherein the sensitivity of the magnetic sensor can be improved by using the magnetic sensor chip, compared with a magnetic sensor using a conventional magnetic sensor chip. Under the same working conditions, the magnetic sensor output voltage provided by the invention is doubled to 600 mV, and the sensitivity is improved by 3 dB. It is to be understood that the above embodiments are merely exemplary embodiments employed to explain the principles of the invention, but the invention is not limited thereto. Various modifications and improvements can be made by those skilled in the art without departing from the spirit and scope of the invention. These modifications and improvements are also considered to be within the scope of the invention.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Description

磁传感器芯片以及磁传感器 技术领域
本发明属于微纳米传感器技术领域， 具体涉及一种磁传感器芯 片以及包含有该磁传感器芯片的磁传感器。 背景技术
磁传感器是将磁场、 电流、 应力应变、 温度、 光等引起敏感元 件磁性能的变化转换成电信号， 以测量相关物理量、特别是微小物理 量的器件， 其相对于传统传感器而言具有灵敏度高等优点， 因此被广 泛应用于航空、 航天、 地质探矿、 医学成像、 信息采集以及军事等领 域。
随着技术的进步， 磁传感器芯片由于具有低功耗、 体积小、 灵 敏度高、 易集成、 成本低、 响应快、 分辨率高、 稳定性好、 可靠性高 等多种优点而作为磁传感器的核心部件，而且磁传感器芯片的使用使 得磁传感器在磁信息存储、自动化以及物联网领域展示了广阔的应用 前景。
图 1 示出了传统的磁传感器芯片的结构图。 如图 1 所示， 磁传 感器芯片包括磁敏感薄膜 2以及导体 3 , 导体 3设置于磁敏感薄膜 2 的两端， 用于与其它部件电连接。 这种磁传感器芯片在使用过程中， 由于磁敏感薄膜 2的长度与宽度的比值较大，导致磁敏感薄膜 2的退 磁场较大， 因此， 磁传感器芯片的磁滞现象严重。 图 2示出了传统的 磁传感器芯片的磁滞回线的曲线图， 图中， 横轴表示外加的磁场强度 ( H ) ， 纵轴表示磁传感器芯片的电阻值 （R ) 。 如图 2所示， 磁传感 器芯片的磁滞回线的宽度较大， 即磁传感器芯片的磁滞较大， 这导致 磁传感器芯片的灵敏度较低。 发明内容
本发明要解决的技术问题就是针对磁传感器芯片存在的上述缺 陷， 提供一种磁传感器芯片， 该磁传感器芯片可以减小、 甚至消除磁 滞现象， 从而提高磁传感器芯片的灵敏度。
为解决上述技术问题， 本发明还提供一种磁传感器， 该磁传感 器的灵敏度较高。
为此， 本发明提供一种磁传感器芯片， 包括磁敏感薄膜， 在所 述磁敏感薄膜的长度方向上间隔设置有 n 个能够实现分段抑制退磁 场的抑制单元， 其中， 11为 2的整数。
优选的， 所述抑制单元为切口， 借助所述切口将所述磁敏感薄 膜分割成 n+1段短磁敏感薄膜；所述切口完全贯穿所述磁敏感薄膜的 厚度方向和宽度方向，并且在所述切口位置设有电连接两个相邻的所 述短磁敏感薄膜的电连接体；或者所述切口在所述磁敏感薄膜的厚度 方向完全贯穿， 而在所述磁敏感薄膜的宽度方向部分贯穿； 或者所述 切口在所述磁敏感薄膜的厚度方向部分贯穿，而在所述磁敏感薄膜的 宽度方向完全贯穿；或者所述切口在所述磁敏感薄膜的厚度方向和宽 度方向均部分贯穿。
优选的， 所述切口在水平面上的投影的形状为矩形、 圆形、 椭 圆形、 哑铃形、 纺锤形、 鼓形、 平行四边形、 三角形或多边形。
优选的， 在所述切口内填充绝缘材料或导电材料。
优选的， 所述抑制单元为用导电材料制作的抑制导体， 所述抑 制导体设置于所述磁敏感薄膜的上表面和 /或下表面和 /或内侧和 /或 外侧， 并与设置在所述磁敏感薄膜外的电源连接。
优选的， 在所述抑制导体与所述磁敏感薄膜之间还设有绝缘体， 所述抑制导体覆盖所述绝缘体，以将所述绝缘体未与所述磁敏感薄膜 接触的表面包裹； 或者， 在所述抑制导体未与所述磁敏感薄膜接触的 表面还设有绝缘体， 所述绝缘体覆盖所述抑制导体， 以将所述抑制导 体未与所述磁敏感薄膜接触的表面包裹。 优选的， 所述抑制单元为加热体， 所述加热体设置于所述磁敏 感薄膜的上表面和 /或下表面和 /或内侧和 /或外侧。
优选的， 在所述加热体的外侧还设有隔热体， 所述隔热体覆盖 所述加热体， 以将加热体发出的热集中到所述磁敏感薄膜上。
优选的， 所述抑制单元为硬磁体， 所述硬磁体设置于所述磁敏 感薄膜的内侧和 /或外侧和 /或上表面和 /或下表面。
优选的， 所述硬磁体紧靠所述磁敏感薄膜或与所述磁敏感薄膜 相距一定间隔。
优选的， 所述抑制单元为设置在磁敏感薄膜内部的惨杂段， 借 助所述掺杂段将所述磁敏感薄膜分割成 n+1段短磁敏感薄膜；所述掺 杂段完全贯穿所述磁敏感薄膜的厚度方向和宽度方向；或者所述掺杂 段在所述磁敏感薄膜的厚度方向完全贯穿，而在所述磁敏感薄膜的宽 度方向部分贯穿；或者所述掺杂段在所述磁敏感薄膜的厚度方向部分 贯穿， 而在所述磁敏感薄膜的宽度方向完全贯穿； 或者所述掺杂段在 所述磁敏感薄膜的厚度方向和宽度方向均部分贯穿。
优选的， 所述掺杂段内的掺杂物为碳、 氮、 氧、 硼、 氦、 磷、 铝、 锌或锡。
优选的，所述磁敏感薄膜为各向异性磁电阻薄膜、巨磁电阻薄膜、 隧道磁电阻薄膜。
优选的， 在所述磁传感器芯片的表面还包括保护膜， 所述保护膜 为二氧化硅膜、 氧化铝膜、 氮化硅膜、 陶瓷膜、 聚酰亚胺膜或环氧树 脂膜。
本发明还提供一种磁传感器， 包括磁传感器芯片， 所述磁传感器 芯片采用本发明提供的所述磁传感器芯片。
本发明具有以下有益效果：
本发明提供的磁传感器芯片借助设置在所述磁敏感薄膜 2 的长 度方向上的抑制单元， 可以使所述磁敏感薄膜 2 实现分段抑制退磁 场， 从而减小、 甚至消除所述磁敏感薄膜 2的磁滞现象， 进而提高磁 传感器芯片的灵敏度。
另外， 本发明还提供一种磁传感器， 该磁传感器包括本发明提 供的磁传感器芯片，借助所述磁传感器芯片可以提高磁传感器的灵敏 度， 与采用传统磁传感芯片的磁传感器相比， 在同样的工作条件下， 本发明提供的磁传感器输出电压提高了 1倍， 达到 600mV， 灵敏度提 高了 3dB。
附图说明
图 1为传统的磁传感器芯片的结构图；
图 2为传统的磁传感器芯片的磁滞回线的曲线图；
图 3为本发明实施例一所述磁传感器芯片的部分结构图； 图 4为切口在磁敏感薄膜的宽度方向部分贯穿的结构图； 图 5为本发明实施例二所述磁传感器芯片的结构图；
图 6为本发明实施例三所述磁传感器芯片的结构图；
图 7为本发明实施例四所述磁传感器芯片的结构图；
图 8为本发明实施例五所述磁传感器芯片的结构图；
图 9为实施例一所述的磁传感器芯片的磁滞回线的曲线图。 具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案， 下面结 合附图对本发明提供的磁传感器芯片及其制作方法进行详细描述。
本发明提供的磁传感器芯片包括基底 1、磁敏感薄膜 2以及导体 3， 导体 3设置于磁敏感薄膜 2的两端， 用于与设置在磁敏感薄膜 2 外部的其它部件（如导电电路） 电连接。 在所述磁敏感薄膜 2的长度 方向上间隔设置有 n个能够实现分段抑制退磁场的抑制单元， 其中， n为 2的整数。
其中，磁敏感薄膜 2可以是各向异性磁电阻薄膜、巨磁电阻薄膜、 隧道磁电阻薄膜， 抑制单元可以为切口、 抑制导体、 加热体、 硬磁体 或者掺杂段。
在磁传感器芯片的表面 （导体 3 除外） 还可以制作保护膜， 以 防止磁敏感薄膜 2和 /或电连接体被腐蚀、 氧化或短路。 保护膜可以 是二氧化硅膜、 氧化铝膜、 氮化硅膜、 陶瓷膜、 聚酰亚胺膜或环氧树 脂膜。
基底 1 可以采用氧化后的硅片， 或者采用玻璃等能够作为传感 器基底的其它材料。
需要说明的是， 本发明提及的磁敏感薄膜的上表面， 是指将基 底水平放置时磁敏感薄膜向上的一面， 对应地， 磁敏感薄膜向下的一 面为下表面。在磁敏感薄膜宽度方向上， 有导体 3凸出的一侧为磁敏 感薄膜的内侧， 与之对应一侧为外侧。 实施例一
图 3 为本发明实施例一所述磁传感器芯片的结构图。 请参阅图 3， 磁传感器芯片包括基底 1、 磁敏感薄膜 2、 导体 3以及保护膜 （图 中未示出） ， 导体 3设置于磁敏感薄膜 2的两端， 用于与设置在磁敏 感薄膜 2外的其它部件电连接。 抑制单元为切口 4， 切口 4在所述磁 敏感薄膜 2的厚度方向和宽度方向完全贯穿， 而且， 在切口 4内部设 有电连接两个相邻的所述短磁敏感薄膜 21的电连接体 41。通过切口 4将所述磁敏感薄膜 2分割成 n+1段短磁敏感薄膜 21。由于短磁敏感 薄膜 21在水平面上投影的长宽比较小， 其可以减小磁传感器芯片的 磁滞现象， 进而提高磁传感器芯片的灵敏度。 电连接体 41是由导电 材料制成。 如图 3所示， 电连接体 41可以将切口 4完全填充， 也可 以仅填充切口 4的一部分或切口 4靠近短磁敏感薄膜 21的上表面区 域， 如仅填充切口 4靠近短磁敏感薄膜 21的上表面区域， 从而使切 口 4内形成空气隙。 不难理解， 电连接体 41也可以仅填充切口 4靠 近短磁敏感薄膜 21的下表面区域、 内侧区域或外侧区域。
切口 4 在水平面上的投影的形状可以为矩形、 圆形、 椭圆形、 哑铃形、 纺锤形、 鼓形、 平行四边形、 三角形或多边形。
需要说明的是， 所述切口 4也可以在磁敏感薄膜 2 的厚度方向 和 /或宽度方向部分贯穿， SP， 在磁敏感薄膜 2的厚度方向完全贯穿， 而在所述磁敏感薄膜 2的宽度方向部分贯穿；或者所述切口在所述磁 敏感薄膜 2的厚度方向部分贯穿，而在所述磁敏感薄膜 2的宽度方向 完全贯穿；或者所述切口在所述磁敏感薄膜 2的厚度方向和宽度方向 均部分贯穿。 当切口 4仅在所述磁敏感薄膜 2的厚度方向和 /或宽度 方向部分贯穿时， 磁敏感薄膜 2已经保持电连接， 因此， 不再需要导 电材料填充切口 4。但这并不表示当切口 4在磁敏感薄膜 2的厚度方 向和 /或宽度方向部分贯穿时， 切口 4不能填充导电材料， 用导电材 料填充切口 4同样能够实现本发明的目的。也就是说， 用绝缘材料或 导电材料填充切口 4或者不填充同样可以实现本发明的目的。
图 4为切口在磁敏感薄膜 2 的宽度方向部分贯穿的结构图。 如 图 4所示， 切口 4设置在磁敏感薄膜 2的宽度方向的中部。
本实施例借助切口对切口所在位置的磁敏感薄膜部分的磁敏感 效应进行抑制， 以分段抑制所述磁敏感薄膜 2的退磁场， 从而减小、 甚至消除所述磁敏感薄膜 2的磁滞现象，进而提高磁传感器芯片的灵 敏度。 实施例二
图 5 为本发明实施例二所述磁传感器芯片的结构图 （所述芯片 两端用于电连接的导体 3该图中未标出） 。 请参阅图 5， 抑制单元为 采用导电材料制成的抑制导体 6， 抑制导体 6设置于所述磁敏感薄膜 2的上表面， 并与设置在所述磁敏感薄膜外的电源连接。 抑制导体 6 可以贯穿磁敏感薄膜宽度的全部， 或仅贯穿磁敏感薄膜宽度的部分。 当然， 抑制导体 6也可以设置在所述磁敏感薄膜 2的下表面和 /或内 侧和 /或外侧。 当抑制导体 6与电源电连接后， 即抑制导体 6内通入 电流时， 与抑制导体 6相对的磁敏感薄膜部分的磁敏感效应被减弱， 从而实现所述磁敏感薄膜 2的退磁场的分段抑制， 从而减小、甚至消 除所述磁敏感薄膜 2的磁滞现象， 进而提高磁传感器芯片的灵敏度。
在抑制导体 6与所述磁敏感薄膜 2之间还可以设置绝缘体 61， 即绝缘体 61 设置在磁敏感薄膜 2 的表面， 抑制导体 6将绝缘体 61 覆盖， 即， 绝缘体 61被夹在抑制导体 6和所述磁敏感薄膜 2之间； 或者在抑制导体 6的表面设置绝缘体 61，绝缘体 61将抑制导体覆盖， 即抑制导体 6被夹在绝缘体 61和所述磁敏感薄膜 2之间。 当抑制导体 6设置在所述磁敏感薄膜 2下表面时， 为了制作磁 敏感薄膜 2， 需要用填充物将相邻抑制导体 6之间凹区填平， 以获得 制作所述磁敏感薄膜 2的平整表面。 实施例三
图 6 为本发明实施例三所述磁传感器芯片的结构图 （所述芯片 两端用于电连接的导体 3该图中未标出） 。 请参阅图 6， 抑制单元为 加热体 7， 加热体设置于所述磁敏感薄膜 2的上表面。 当然， 加热体 7可以设置在所述磁敏感薄膜 2 的上表面和 /或下表面和 /或内侧和 / 或外侧。加热体 7可以对与其相对的磁敏感薄膜部分的磁敏感效应进 行抑制， 实现所述磁敏感薄膜 2的退磁场分段抑制， 从而减小、 甚至 消除所述磁敏感薄膜 2 的磁滞现象， 进而提高磁传感器芯片的灵敏 度。
在所述加热体 7的外侧还设有隔热体 71，所述隔热体 71覆盖所 述加热体 7， 即加热体 7夹在隔热体 71和所述磁敏感薄膜 2之间。 借助隔热体 71可以使加热体 7产生的热量集中到磁敏感薄膜 2， 在 减少热量损失的同时，提高与加热体相对的磁敏感薄膜部分的磁敏感 效应的抑制作用。
当加热体 7设置在所述磁敏感薄膜 2下表面时， 为了制作磁敏 感薄膜 2， 需要用填充物将相邻加热体 7之间凹区填平， 以获得制作 所述磁敏感薄膜 2的平整表面。 实施例四
图 7 为本发明实施例四所述磁传感器芯片的结构图 （所述芯片 两端用于电连接的导体 3该图中未标出） 。 请参阅图 7， 抑制单元为 硬磁体 8， 所述硬磁体 8设置于所述磁敏感薄膜 2的内侧和外侧。 然 而， 硬磁体 8也可以设置在所述磁敏感薄膜 2的内侧或外侧， 或所述 磁敏感薄膜的上表面和 /或下表面。 而且硬磁体 8可以紧靠所述磁敏 感薄膜 2， 或与所述磁敏感薄膜 2相隔一定距离。 硬磁体 8可以对与 其相对的磁敏感薄膜部分的磁敏感效应进行抑制，实现所述磁敏感薄 膜 2 的退磁场的分段抑制， 从而减小、 甚至消除所述磁敏感薄膜 2 的磁滞现象， 进而提高磁传感器芯片的灵敏度。
当硬磁体 8设置在所述磁敏感薄膜 2下表面时， 为了制作磁敏 感薄膜 2， 需要用填充物将相邻硬磁体 8之间凹区填平， 以获得制作 所述磁敏感薄膜 2的平整表面。 实施例五
图 8 为本发明实施例五所述磁传感器芯片的结构图 （所述芯片 两端用于电连接的导体 3该图中未标出） 。 请参阅图 8， 抑制单元为 设置在所述磁敏感薄膜 2内部的掺杂段 9。所述掺杂段完全贯穿所述 磁敏感薄膜 2的厚度方向和宽度方向；或者所述掺杂段在所述磁敏感 薄膜 2的厚度方向完全贯穿， 而在宽度方向部分贯穿； 或者所述掺杂 段在所述磁敏感薄膜 2 的厚度方向部分贯穿， 而在宽度方向完全贯 穿；或者所述掺杂段在所述磁敏感薄膜 2的厚度方向和宽度方向均部 分贯穿。
所述掺杂段内的掺杂物为碳、 氮、 氧、 硼、 氦、 磷、 铝、 锌或锡。 所述掺杂方法可以为热扩散、 离子注入、 等离子体掺杂、 投射式气体 浸入激光掺杂、 汽相掺杂、 离子淋浴惨杂、 金属离子惨杂或阴离子掺 杂。
图 9 为实施例一所述的磁传感器芯片的磁滞回线的曲线图。 图 中， 横轴表示外加的磁场强度 （H ) ， 纵轴表示磁化强度 （M ) 。 请参 阅图 9， 磁传感器芯片的磁滞回线基本重合， 即磁传感器芯片的矫顽 力接近零， 因此， '实施例一提供的磁传感器芯片的灵敏度较高。 实施 例二至实施例五所述的磁传感器芯片的磁滞回线的曲线图与图 9 基 本相同。
因此， 本发明提供的所述磁传感器芯片借助设置在所述磁敏感 薄膜 2的长度方向上的抑制单元，可以使所述磁敏感薄膜 2实现退磁 场的分段抑制， 从而减小、 甚至消除所述磁敏感薄膜 2的磁滞现象， 进而提高磁传感器芯片的灵敏度。
此外， 本发明还提供一种磁传感器， 该磁传感器包括磁传感器 芯片，所述磁传感器芯片采用实施例一至实施例五任意一种所述的磁 传感器芯片， 借助所述磁传感器芯片可以提高磁传感器的灵敏度， 与 采用传统磁传感芯片的磁传感器相比， 在同样的工作条件下， 本发明 提供的磁传感器输出电压提高了 1倍，达到 600mV，灵敏度提高了 3dB。 可以理解的是， 以上实施方式仅仅是为了说明本发明的原理而采 用的示例性实施方式， 然而本发明并不局限于此。 对于本领域内的普 通技术人员而言， 在不脱离本发明的精神和实质的情况下，，可以做出 各种变型和改进， 这些变型和改进也视为本发明的保护范围。

Claims

1.一种磁传感器芯片， 包括磁敏感薄膜， 其特征在于， 在所述 磁敏感薄膜的长度方向上间隔设置有 n 个能够实现分段抑制退磁场 的抑制单元， 其中， 11为 2的整数。
2.根据权利要求 1 所述的磁传感器芯片， 其特征在于， 所述抑 制单元为切口，借助所述切口将所述磁敏感薄膜分割成 n+1段短磁敏 感薄膜； 所述切口完全贯穿所述磁敏感薄膜的厚度方向和宽度方向， 并且在所述切口位置设有电连接两个相邻的所述短磁敏感薄膜的电 连接体； 或者所述切口在所述磁敏感薄膜的厚度方向完全贯穿， 而在 所述磁敏感薄膜的宽度方向部分贯穿；或者所述切口在所述磁敏感薄 膜的厚度方向部分贯穿， 而在所述磁敏感薄膜的宽度方向完全贯穿； 或者所述切口在所述磁敏感薄膜的厚度方向和宽度方向均部分贯穿。
3.根据权利要求 2 所述的磁传感器芯片，，其特征在于， 所述切 口在水平面上的投影的形状为矩形、 圆形、椭圆形、哑铃形、纺锤形、 鼓形、 平行四边形、 三角形或多边形。
4.根据权利要求 2 所述的磁传感器芯片， 其特征在于， 在所述 切口内填充绝缘材料或导电材料。
5.根据权利要求 1 所述的磁传感器芯片， 其特征在于， 所述抑 制单元为用导电材料制作的抑制导体，所述抑制导体设置于所述磁敏 感薄膜的上表面和 /或下表面和 /或内侧和 /或外侧， 并与设置在所述 磁敏感薄膜外的电源连接。
6.根据权利要求 5 所述的磁传感器芯片， 其特征在于， 在所述 抑制导体与所述磁敏感薄膜之间还设有绝缘体，所述抑制导体覆盖所 述绝缘体， 以将所述绝缘体未与所述磁敏感薄膜接触的表面包裹； 或 者， 在所述抑制导体未与所述磁敏感薄膜接触的表面还设有绝缘体， 所述绝缘体覆盖所述抑制导体，以将所述抑制导体未与所述磁敏感薄 膜接触的表面包裹。
7.根据权利要求 1 所述的磁传感器芯片， 其特征在于， 所述抑 制单元为加热体， 所述加热体设置于所述磁敏感薄膜的上表面和 /或 下表面和 /或内侧和 /或外侧。
8.根据权利要求 7 所述的磁传感器芯片， 其特征在于， 在所述 加热体的外侧还设有隔热体， 所述隔热体覆盖所述加热体， 以将加热 体发出的热集中到所述磁敏感薄膜上。
9.根据权利要求 1 所述的磁传感器芯片， 其特征在于， 所述抑 制单元为硬磁体， 所述硬磁体设置于所述磁敏感薄膜的内侧和 /或外 侧和 /或上表面和 /或下表面。
10.根据权利要求 9所述的磁传感器芯片， 其特征在于， 所述硬 磁体紧靠所述磁敏感薄膜或与所述磁敏感薄膜相距一定间隔。
11.根据权利要求 1所述的磁传感器芯片， 其特征在于， 所述抑 制单元为设置在磁敏感薄膜内部的掺杂段，借助所述掺杂段将所述磁 敏感薄膜分割成 n+1段短磁敏感薄膜；所述掺杂段完全贯穿所述磁敏 感薄膜的厚度方向和宽度方向；或者所述掺杂段在所述磁敏感薄膜的 厚度方向完全贯穿， 而在所述磁敏感薄膜的宽度方向部分贯穿； 或者 所述掺杂段在所述磁敏感薄膜的厚度方向部分贯穿，而在所述磁敏感 薄膜的宽度方向完全贯穿；或者所述掺杂段在所述磁敏感薄膜的厚度 方向和宽度方向均部分贯穿。
12.根据权利要求 11 所述的磁传感器芯片， 其特征在于， 所述 掺杂段内的掺杂物为碳、 氮、 氧、 硼、 氦、 磷、 铝、 锌或锡。
13.根据权利要求 1-12 任意一项所述的磁传感器芯片， 其特征 在于， 所述磁敏感薄膜为各向异性磁电阻薄膜、 巨磁电阻薄膜、 隧道 磁电阻薄膜。 .
14.根据权利要求 1-12 任意一项所述的磁传感器芯片， 其特征 在于， 在所述磁传感器芯片的表面还包括保护膜， 所述保护膜为二氧 化硅膜、 氧化铝膜、 氮化硅膜、 陶瓷膜、 聚酰亚胺膜或环氧树脂膜。
15.—种磁传感器， 包括磁传感器芯片， 其特征在于， 所述磁传 感器芯片采用权利要求 1-14中任意一项所述的磁传感器芯片。
PCT/CN2012/000122 2011-03-11 2012-01-21 磁传感器芯片以及磁传感器 Ceased WO2012122851A1 (zh)

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