WO2012129755A1 - Unité de mosaïque utilisant des photodiodes à avalanches à ultraviolet, son procédé d'application, et mosaïque la comprenant - Google Patents

Unité de mosaïque utilisant des photodiodes à avalanches à ultraviolet, son procédé d'application, et mosaïque la comprenant Download PDF

Info

Publication number
WO2012129755A1
WO2012129755A1 PCT/CN2011/072138 CN2011072138W WO2012129755A1 WO 2012129755 A1 WO2012129755 A1 WO 2012129755A1 CN 2011072138 W CN2011072138 W CN 2011072138W WO 2012129755 A1 WO2012129755 A1 WO 2012129755A1
Authority
WO
WIPO (PCT)
Prior art keywords
imaging array
avalanche tube
ultraviolet
avalanche
array pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2011/072138
Other languages
English (en)
Chinese (zh)
Inventor
吴福伟
闫峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing University
Nanjing Tech University
Original Assignee
Nanjing University
Nanjing Tech University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing University, Nanjing Tech University filed Critical Nanjing University
Priority to PCT/CN2011/072138 priority Critical patent/WO2012129755A1/fr
Publication of WO2012129755A1 publication Critical patent/WO2012129755A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Definitions

  • the present invention relates to an ultraviolet avalanche tube imaging array pixel, an application method thereof, and an avalanche tube imaging array.
  • BACKGROUND OF THE INVENTION The detection of ultraviolet light, especially in the solar blind, has extremely important applications in space detection and military applications.
  • the photon counting system in the ultraviolet band uses a photomultiplier tube (PMT), but the photomultiplier tube is bulky, fragile, high in operating voltage and expensive, so a small-sized, inexpensive solid-state ultraviolet detector is very important.
  • PMT photomultiplier tube
  • FIG. 1 is a graph showing the relationship between the yield of the AlGaN avalanche tube and the device area. It can be seen that if the avalanche tube area is ⁇ ⁇ ⁇ 2 , the yield is less than 1%, assuming a 1KX 1K UV is required.
  • Optical avalanche tube imaging array in which the number of good quality pixels is only 10 ⁇ , and the remaining 990 pixels are bad. Such an imaging array cannot work at all, so it is difficult to use traditional avalanche tubes at the current yield.
  • the structure implements an ultraviolet avalanche tube imaging array.
  • the APD 100 is a typical silicon-based metal-resistance-semiconductor (MRS) [V. Saveliev, V. Golovin, Nuclear Instruments and Methods in Physics Research A 442 (2000): 223-229] Structure Avalanche
  • the tube detector whose basic structure is composed of a photodiode 101, a thin film resistor 102 and a metal electrode 103, the thin film resistor 102 and the p-type semiconductor end of the photodiode 101 are in electrical contact, and then the metal layer 103 is deposited on the thin film resistor 102. It is in contact with the thin film resistor 102, and its equivalent circuit is shown in Fig. 2B.
  • a negative voltage Vbias is applied to the MRS structure avalanche tube APD 100.
  • the photodiode 101 When there is no light, the photodiode 101 is in a negative bias state, the diode 101 is equivalent to a capacitor, and the negative voltage Vbias is mainly distributed on the photodiode 101. If a photon reaches the diode 101, the photon is absorbed to generate electron-hole pairs, electrons and holes generate more electrons and holes in the multiplication region, and the photodiode 101 avalanches, so that the optical signal is converted into an electrical signal and amplified. The process can also be seen as a discharge process of a capacitor.
  • the present invention provides an ultraviolet avalanche tube imaging array pixel, which can effectively overcome the defects of the semiconductor material itself and improve the yield.
  • the invention also provides an application method of the ultraviolet avalanche tube imaging array pixel and an avalanche tube imaging array composed thereof.
  • the ultraviolet avalanche tube imaging array pixel is formed by a plurality of avalanche tube detectors connected in parallel, wherein the avalanche tube detector is sequentially connected by a photodiode, a thin film resistor and a metal layer, and each of the avalanche tube detectors is photoelectrically
  • the n-type semiconductor of the diode is connected to the contact electrode, and the contact electrode of each avalanche tube detector in the imaging pixel forms an electrical connection as an electrode, and each avalanche tube detector shares a complete metal layer, and the metal layer forms an ultraviolet avalanche tube.
  • the other electrode of the imaging array cell is formed by a plurality of avalanche tube detectors connected in parallel, wherein the avalanche tube detector is sequentially connected by a photodiode, a thin film resistor and a metal layer, and each of the avalanche tube detectors is photoelectrically
  • the n-type semiconductor of the diode is connected to the contact electrode, and the contact electrode
  • the ultraviolet avalanche tube imaging array pixel comprises, in order from bottom to top, a plurality of independent photodiodes, an insulating passivation layer, and a plurality of independent thin film resistors and insulating mediums corresponding to the plurality of photodiodes.
  • a layer and a metal layer wherein the passivation layer is provided with a plurality of first contact holes, so that the p-type semiconductor end of each photodiode is electrically contacted with the corresponding thin film resistor through the first contact hole, and the insulating dielectric layer is provided with a plurality of The second contact hole causes each of the thin film resistors to make electrical contact with the metal layer through the second contact hole.
  • both the passivation layer and the dielectric layer are electrically insulating layers.
  • the method for preparing the ultraviolet avalanche tube imaging array pixel comprises the following steps:
  • the basic unit of the ultraviolet avalanche tube imaging array pixel may be the substrate 201 from the bottom up, the n-type semiconductor 202, the n-type contact electrode 203, p-type
  • the semiconductor 204, the n-type and p-type semiconductors are epitaxially formed by MOCVD; then the p-type semiconductor is etched to form n rows of contact electrodes 203; the passivation layer 205 is deposited to form contact holes 206, and a thin film resistor 207 is formed.
  • the metal layer 210 may be a transparent or translucent material.
  • UV-APD 300 The ultraviolet avalanche tube imaging array pixel (hereinafter referred to as UV-APD 300) may be formed by a plurality of UV-APDs 200 in parallel, as shown in FIG. 3A, UV-APD 200-1, 200-2, 200-3 are Three UV-APDs 200, which are connected in parallel by a metal layer 210 and a common contact electrode 203-1, 203-2, the basic process of which is illustrated in Figure 3C:
  • Step 212 forming an n-type semiconductor 202 and a p-type semiconductor 204 on the substrate 201, and epitaxially growing the semiconductor material by MOCVD;
  • Step 213, etching a p-type semiconductor, forming contact electrodes 203-1 and 203-2 on the n-type semiconductor, and the contact electrodes may be connected together by a metal line as a contact electrode;
  • Step 214 depositing a passivation layer 205 and etching to form a contact hole 206;
  • Step 215 depositing and etching to form thin film resistors 207-1, 207-2 and 207-3;
  • Step 216 depositing a dielectric layer 208 and forming a contact hole 209;
  • Step 217 depositing a metal layer 210 and making electrical contact with the film resistor, and the metal layer 210 constitutes another electrode 301.
  • the equivalent circuit diagram of the UV-APD 300 is shown in FIG. 3D.
  • the UV-APD 300 is formed by a plurality of UV-APDs 200 connected in parallel, and the cathodes of all the UV-APDs 200 are connected together by the metal layer 210 to form an electrode, the contact electrode.
  • the 203 are joined together to form another electrode.
  • the UV-APD 300 thus constructed is actually composed of a plurality of UV-APD 200 units connected in parallel.
  • the yield Y of GaN and AlGaN-based avalanche tubes is very low due to the high defect density of GaN and AlGaN materials.
  • UV-APD 300 is composed of a suitable number of UV-APDs 200 in parallel, then UV-APD There are always a certain number of good quality UV-APD 200 in 300, so the UV-APD 300 can always detect the optical signal, so the UV avalanche tube imaging array of this structure has a pixel yield close to 100%, which can be realized.
  • Ultraviolet avalanche tube imaging arrays overcome the problems caused by the high defect density of GaN and AlGaN materials themselves.
  • the photodiode in the ultraviolet avalanche tube imaging array pixel is made of a m-v family and/or a ⁇ - ⁇ group semiconductor material, preferably made of at least one of GaN, AlGaN or A1N.
  • the radius of the avalanche tube detector unit in the ultraviolet avalanche tube imaging array pixel is preferably from 1 to 50 ⁇ m.
  • the resistance of each individual thin film resistor is from 100 ⁇ to 10 ⁇ ; the preferred material of the thin film resistor is SiC or Si x O y .
  • UV-APDs 200 are bad in UV-APD 300, so when there is no light plus negative bias, these A bad avalanche has occurred in the UV-APD 200.
  • I B an electrical signal on the electrode 301. This electrical signal is a dark current. We can call this current the bottom current; and those of good quality UV-APD 200 will work properly.
  • the application method of the ultraviolet avalanche tube imaging array pixel is: applying a negative bias voltage to the ultraviolet avalanche tube imaging array pixel, so that the ultraviolet avalanche tube imaging array pixel works, when there is no light
  • the measured photo-current of the ultraviolet avalanche tube imaging array is I B , which is used as the pixel bottom current; when there is light, those good quality UV-APD 200 undergo avalanche process to convert the optical signal into electricity.
  • the signal is amplified and the pixel current of the ultraviolet avalanche tube imaging array is measured.
  • Ultraviolet avalanche tube imaging array pixels operate in linear amplification mode or Geiger Mode [D. Renker, Nuclear Instruments and Methods in Physics Research A 567 (2006) 48-56].
  • the applied negative bias is 10V to 100V.
  • the avalanche tube imaging array is composed of a plurality of the ultraviolet avalanche tube imaging array pixels.
  • the UV-APD 300 is obtained by connecting a plurality of UV-APDs 200 in parallel, the area of the UV-APD 200 can be made small, which improves the yield of the UV-APD 200 without affecting the photosensitive area of the UV-APD 300. If the UV-APD 300 is composed of a suitable number of UV-APDs 200 in parallel, there is always a certain number of good quality UV-APDs 200 in the UV-APD 300. If the defect density of GaN is 10 7 cm - 2 and the area of UV-APD200 is 5 ⁇ 5 ⁇ 2 , the yield of UV-APD200 is 13% according to the yield formula, if the UV-APD 300 is composed of 10x10 UV-APD 200 units.
  • the composition, the UV-APD 200 in the pixel UV-APD 300 is of good quality, so that the UV-APD 300 can always detect the optical signal, so the purple ultraviolet avalanche tube imaging array of this structure is good.
  • the rate is close to 100%, which overcomes the problems caused by the high defect density of GaN and AlGaN materials themselves.
  • the UV-APD 300 is composed of 16 UV-APDs 200 in parallel. If there is always a good quality UV-APD 200 in the pixel, the UV-APD 300 is a good quality image pixel, which can The optical signal is detected and the yield is nearly 100%, and the ultraviolet avalanche tube imaging array can be realized.
  • the yield of the ultraviolet avalanche tube imaging array pixel UV-APD 300 of the present invention is close to 100%, so that the avalanche tube imaging array can be fabricated by using the UV-APD 300 as an imaging unit.
  • the UV-APD ARRAY 500 is an avalanche tube imaging array composed of NXN UV-APD 300.
  • the imaging array UV- In the APD ARRAY 500 all the pixel units are of good quality, so the ultraviolet avalanche tube imaging array pixel UV-APD 300 of the present invention overcomes the inability to achieve ultraviolet light due to the high defect density of the GaN and AlGaN materials themselves. Avalanche tube imaging array problems.
  • the novel structure proposed by the present invention can also be used to fabricate a large photosensitive area ultraviolet avalanche tube imaging array pixel. Since the defect density of the GaN and AlGaN materials themselves is relatively large, a large-area ultraviolet avalanche tube is very difficult to manufacture, but
  • the UV-APD 300 is composed of a plurality of UV-APDs 200 in parallel, which can make the area of the UV-APD 200 small, improve the yield of the UV-APD 200, and is composed of a plurality of UV-APDs 200. UV-APD 300 increases the photosensitive area without affecting the yield. For example, we need to make a UV avalanche tube imaging array pixel of the size of ⁇ ⁇ ⁇ 2.
  • the yield is less than 1%. If the invention is used, if the area of the UV-APD 200 is 5 ⁇ 5 ⁇ 2 ( As the process progresses, the size can be made smaller.) The yield of UV-APD 200 is about 10%, then 20-20 UV-APD 200 can be used to form UV-APD 300, so that the pixel area reaches 100 X ⁇ 2 , and its yield can be close to 100%, which is not possible with the current avalanche tube structure.
  • the UV avalanche tube imaging array of the present invention is composed of 10 x 10 5 ⁇ 5 ⁇ 2 sized UV-APD 200 cells), and it can be found only when AlGaN and GaN materials are used.
  • the defect density is reduced to 10 4 cm -2
  • the yield of the conventional structured ultraviolet avalanche tube can be compared with the present invention. Therefore, by using the ultraviolet avalanche tube imaging array pixel structure proposed by the present invention, a large photosensitive area can be made.
  • the UV avalanche tube cell avoids the problem of a drop in yield due to the large area.
  • the ultraviolet avalanche tube imaging array pixel structure of the invention overcomes the problem that the defect density of the multi-defective material such as GaN, AlGaN and the like is too high, and the yield of the novel structure ultraviolet avalanche tube imaging array can be improved. Approaching and reaching 100%, using the ultraviolet avalanche tube imaging array pixel as an imaging unit, an ultraviolet avalanche tube imaging array can be fabricated.
  • the ultraviolet avalanche tube imaging array pixel structure overcomes the problem of low yield of a large area avalanche tube, and the ultraviolet avalanche tube imaging array pixel can be composed of tens or hundreds of smaller basic unit structures UV-
  • the APD 200 is composed, so that a large a photosensitive area of the ultraviolet avalanche tube imaging array pixel can be made, and there is no problem that the yield is lowered because the area is too large.
  • FIG. 1 is a diagram showing the relationship between the yield of a conventional avalanche tube detector and the device area of a conventional AlGaN material;
  • FIG. 2A is a schematic view showing the structure of a typical silicon-based MRS avalanche tube detector;
  • 2B is an equivalent circuit diagram of the silicon-based MRS structure avalanche tube detector described in FIG. 1A;
  • 3A is a schematic structural view of an ultraviolet avalanche tube imaging array pixel according to the present invention.
  • 3B is a schematic structural diagram of a basic constituent unit in the ultraviolet avalanche tube imaging array pixel of FIG. 3A;
  • 3C is a basic process of the ultraviolet avalanche tube imaging array pixel of FIG. 3A;
  • 3D is an equivalent circuit diagram of the ultraviolet avalanche tube imaging array pixel of FIG. 3A;
  • FIG. 4 is a schematic structural view of a specific ultraviolet avalanche tube imaging array pixel according to the present invention.
  • Figure 5 is an avalanche tube imaging array of the present invention
  • FIG. 6 is a graph comparing the yield of a conventional structured avalanche tube detector with an area of 50 ⁇ 50 ⁇ 2 and the yield of the ultraviolet avalanche tube imaging array of the present invention.
  • DETAILED DESCRIPTION OF THE INVENTION A schematic view of an ultraviolet avalanche tube imaging array pixel of the present invention is shown in FIG. If the ultraviolet avalanche tube imaging array pixel UV-APD 300 is composed of a plurality of basic units UV-APD 200 (as shown in FIG. 3A), the radius of the UV-APD 200 may be ⁇ to 50 ⁇ . In FIG. 3A, we can form the substrate 201 from bottom to top.
  • the substrate 201 can be a material such as SiC, sapphire, or silicon substrate, but requires the substrate to transmit light; the n-type semiconductor 202 and the p-type semiconductor 204, the material can be It is a material such as GaN, A1N or AlGaN.
  • the n-type semiconductor 202 and the p-type semiconductor 204 can be epitaxially grown by MOCVD, and a buffer layer is also formed, thereby reducing lattice dislocations in the material and reducing the defect density; and then etching p The semiconductor is exposed to a portion of the n-type semiconductor, and then the n-type contact electrode 203 is formed.
  • the electrode may be made of a material such as a Ti/Au alloy; the insulating passivation layer 205 is deposited and a contact hole 206 is formed, and the passivation layer may be made of an oxide or the like; Forming the thin film resistor 207 to make the thin film resistor 207 and the p-type semiconductor form electrical contact, the thin film resistor 207 may be made of a material such as SiC or Si x O y having a resistance value of about several hundred ⁇ ⁇ to 1 ⁇ ⁇ ; a dielectric layer 208 is deposited and a contact hole 209 is formed, the metal layer 210 and the thin film resistor 207 are in electrical contact, and 211 is a contact electrode.
  • the ultraviolet avalanche tube imaging array pixel UV-APD 300 of the present invention can be composed of tens to hundreds of UV-APD 200s, and if it constitutes an ultraviolet avalanche tube imaging array pixel of the size ⁇ ⁇ ⁇ 2 , 20 X can be used. 20 UV-APD 200s with an area of 5 X 5 ⁇ m 2 are formed, and the process flow is shown in FIG. 3C.
  • n-type semiconductor 202 and a p-type semiconductor 204 are formed on the substrate 201, and a semiconductor material such as GaN, A1N or AlGaN can be epitaxially grown by MOCVD;
  • the p-type semiconductor 204 is etched to form a plurality of photodiode array structures having an array size of 20 X 20 and a photodiode having an area of 5 ⁇ 5 ⁇ 2 .
  • a contact electrode 203 is formed on the n-type semiconductor 202, and all of the n-type contact electrodes 203 may be connected together by a metal line as an electrode of the ultraviolet avalanche photoimageable array pixel;
  • the metal layer 210 is deposited and electrically contacted with all of the thin film resistors 207 through the contact holes 209, and the metal layer 210 constitutes the other electrode 211.
  • a negative bias voltage Vbias is applied to the electrode 301, so that the pixel UV-APD 300 operates in linear amplification mode or Geiger Mode.
  • the voltage can range from 10V to 100V.
  • the operating voltage varies according to different doping concentrations and process parameters.
  • I c is the size of the electrical signal read by the avalanche tube cell UV-APD 300.

Landscapes

  • Light Receiving Elements (AREA)

Abstract

La présente invention concerne une unité de mosaïque utilisant des photodiodes à avalanche à ultraviolet, son procédé d'application et une mosaïque la comprenant. L'unité de mosaïque (300) consiste en une pluralité de détecteurs à diodes à avalanche (200-1 à 200-3) connectés en parallèle, lesdits détecteurs comprenant des photodiodes, des résistances à couche mince (207-1 à 207-3) et une couche métallique (210) connectées en série. Dans chacun des détecteurs à diodes à avalanche, le semi-conducteur de type n (202) de la photodiode est électriquement connecté à une électrode de contact (203-1, 203-2) et les électrodes de contact situées dans chaque détecteur à diode à avalanche de l'unité de mosaïque sont électriquement connectées les unes aux autres et utilisées comme une électrode. Tous les détecteurs à diodes à avalanche partagent une couche métallique complète, l'autre électrode de l'unité de mosaïque. La mosaïque est composée d'une pluralité d'unités de mosaïque. L'unité de mosaïque qui utilise des photodiodes à avalanche à ultraviolet d'une nouvelle structure surmonte le problème d'un rendement moindre provoqué par la haute densité de défauts dans le matériau lui-même, ce qui permet que le rendement s'approche de 100 % ou atteigne 100 %.
PCT/CN2011/072138 2011-03-25 2011-03-25 Unité de mosaïque utilisant des photodiodes à avalanches à ultraviolet, son procédé d'application, et mosaïque la comprenant Ceased WO2012129755A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/CN2011/072138 WO2012129755A1 (fr) 2011-03-25 2011-03-25 Unité de mosaïque utilisant des photodiodes à avalanches à ultraviolet, son procédé d'application, et mosaïque la comprenant

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2011/072138 WO2012129755A1 (fr) 2011-03-25 2011-03-25 Unité de mosaïque utilisant des photodiodes à avalanches à ultraviolet, son procédé d'application, et mosaïque la comprenant

Publications (1)

Publication Number Publication Date
WO2012129755A1 true WO2012129755A1 (fr) 2012-10-04

Family

ID=46929301

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2011/072138 Ceased WO2012129755A1 (fr) 2011-03-25 2011-03-25 Unité de mosaïque utilisant des photodiodes à avalanches à ultraviolet, son procédé d'application, et mosaïque la comprenant

Country Status (1)

Country Link
WO (1) WO2012129755A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111933747A (zh) * 2020-07-22 2020-11-13 中国电子科技集团公司第十三研究所 面阵列背入射式日盲紫外探测器及其制备方法
CN117316961A (zh) * 2023-11-24 2023-12-29 季华实验室 雪崩二极管装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080283953A1 (en) * 2007-05-17 2008-11-20 Princeton Lightwave, Inc. Negative Feedback Avalanche Diode
CN100505331C (zh) * 2002-12-10 2009-06-24 通用电气公司 恶劣环境下使用的雪崩光电二极管
CN101484999A (zh) * 2006-07-03 2009-07-15 浜松光子学株式会社 光电二极管阵列
JP2011007693A (ja) * 2009-06-26 2011-01-13 Toshiba Corp 光電子増倍装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100505331C (zh) * 2002-12-10 2009-06-24 通用电气公司 恶劣环境下使用的雪崩光电二极管
CN101484999A (zh) * 2006-07-03 2009-07-15 浜松光子学株式会社 光电二极管阵列
US20080283953A1 (en) * 2007-05-17 2008-11-20 Princeton Lightwave, Inc. Negative Feedback Avalanche Diode
JP2011007693A (ja) * 2009-06-26 2011-01-13 Toshiba Corp 光電子増倍装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
AKINDINOV, A. V ET AL.: "Detection of Light Pulses Using an Avalanche- Photodiode Array with a Metal-Resistor-Semiconductor Structure.", INSTRUMENTS AND EXPERIMENTAL TECHNIQUES., vol. 48, no. 3, 2005, pages 355 - 363 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111933747A (zh) * 2020-07-22 2020-11-13 中国电子科技集团公司第十三研究所 面阵列背入射式日盲紫外探测器及其制备方法
CN117316961A (zh) * 2023-11-24 2023-12-29 季华实验室 雪崩二极管装置
CN117316961B (zh) * 2023-11-24 2024-03-12 季华实验室 雪崩二极管装置

Similar Documents

Publication Publication Date Title
US9748428B2 (en) Light detection device including a semiconductor light detection element with a through-hole electrode connection, a mounting substrate and a light-transmissive substrate
JP6967755B2 (ja) 光検出器
US8969990B2 (en) Light detection device
US8237126B2 (en) X-ray imaging device and method for the manufacturing thereof
CN109686809B (zh) 一种iii族氮化物半导体可见光雪崩光电探测器及制备方法
US7608830B1 (en) Separate absorption and detection diode for two-color operation
US20170263798A1 (en) Photodetector and lidar device using the same
US20080087914A1 (en) Extreme Ultraviolet (EUV) Detectors Based Upon Aluminum Nitride (ALN) Wide Bandgap Semiconductors
US10115764B2 (en) Multi-band position sensitive imaging arrays
CN209216971U (zh) 雪崩光电二极管阵列探测器
Reine et al. Solar-blind AlGaN 256× 256 pin detectors and focal plane arrays
US20160111587A1 (en) Infra red detectors and methods of manufacture
CN105655437A (zh) 一种紫外雪崩光电探测器
CN105742387B (zh) AlGaN渐变组分超晶格雪崩光电二极管
CN108922931B (zh) 一种氧化镓基紫外探测器及其制作方法
CN102496648A (zh) 内置负反馈金属-半导体-金属结构紫外光单光子探测器
WO2012161747A1 (fr) Nanostructures droites passivées et leurs procédés de fabrication
WO2012129755A1 (fr) Unité de mosaïque utilisant des photodiodes à avalanches à ultraviolet, son procédé d'application, et mosaïque la comprenant
CN106409965B (zh) 一种高速饱和单行载流子紫外光电二极管及制备方法
CN101211958A (zh) 铝镓氮-锆钛酸铅焦平面探测器
CN102184929B (zh) 紫外光雪崩管成像阵列像元、其应用方法及雪崩管成像阵列
US9728577B2 (en) Infrared image sensor
CN110676344A (zh) 一种双响应GaN紫外探测器及其制备方法
JP2009283603A (ja) 検出装置、受光素子アレイおよびその製造方法
JP4505401B2 (ja) 受光素子

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11862246

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11862246

Country of ref document: EP

Kind code of ref document: A1