WO2012132575A1 - Plaque de douche, appareil de croissance en phase vapeur et procédé de croissance en phase vapeur - Google Patents

Plaque de douche, appareil de croissance en phase vapeur et procédé de croissance en phase vapeur Download PDF

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Publication number
WO2012132575A1
WO2012132575A1 PCT/JP2012/053105 JP2012053105W WO2012132575A1 WO 2012132575 A1 WO2012132575 A1 WO 2012132575A1 JP 2012053105 W JP2012053105 W JP 2012053105W WO 2012132575 A1 WO2012132575 A1 WO 2012132575A1
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WIPO (PCT)
Prior art keywords
plate
shower
phase growth
vapor phase
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2012/053105
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English (en)
Japanese (ja)
Inventor
足立　雄介
俊範 岡田
坪井　俊樹
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Sharp Corp
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Sharp Corp
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Publication of WO2012132575A1 publication Critical patent/WO2012132575A1/fr
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas

Definitions

  • the present invention relates to a shower plate, a vapor phase growth apparatus, and a vapor phase growth method, such as a vertical showerhead type MOCVD (Metal Organic Chemical Vapor Deposition).
  • MOCVD Metal Organic Chemical Vapor Deposition
  • FIG. 16 shows a schematic configuration of an example of a conventional vertical shower head type MOCVD apparatus used in the MOCVD method.
  • a gas pipe 104 for introducing a reaction gas and a carrier gas from a gas supply source 101 to a growth chamber 103 inside the reaction furnace 102 is connected, and the inside of the growth chamber 103 inside the reaction furnace 102 is connected.
  • a shower head 105 provided with a plurality of gas discharge holes for introducing a reaction gas and a carrier gas into the growth chamber 103 is installed as a gas introduction part at the upper part.
  • a susceptor 107 for placing the substrate 106 is installed below the growth chamber 103 so as to face the shower head 105.
  • the susceptor 107 includes a heater 108 for heating the substrate 106, and is rotatable about a rotation shaft 109 by an actuator (not shown).
  • a gas exhaust unit 110 for exhausting the gas in the growth chamber 103 to the outside is installed at the lower part of the reaction furnace 102.
  • the gas exhaust unit 110 is connected via a purge line 111 to an exhaust gas treatment device 112 for rendering the exhausted gas harmless.
  • the substrate 106 is set on the susceptor 107, the susceptor 107 is rotated, and the substrate 106 is heated to a predetermined temperature by the heater 108. To do. Thereafter, a reaction gas and a carrier gas (inert gas) are introduced into the growth chamber 103 from a plurality of gas discharge holes provided in the shower head 105.
  • a reaction gas and a carrier gas inert gas
  • Patent Document 1 Japanese Patent Laid-Open No. 8-91989
  • a shower head 200 disclosed in Patent Document 1 Japanese Patent Laid-Open No. 8-91989
  • a cooling chamber 204 for cooling the first conduit 202 and the second conduit 203.
  • reaction gases are separately introduced into the growth chamber 201, then mixed and homogeneous at a position close to the heated substrate 205. It is described that a mixture can be formed.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 8-91989
  • a product due to the gas reacted in the growth chamber 201 is attached to a surface (hereinafter referred to as a shower surface) facing the substrate 205,
  • the product deposited on the shower surface falls on the substrate 205, causing a problem that a defect occurs.
  • Patent Document 2 Japanese Patent Laid-Open No. 11-131239
  • Patent Document 2 Japanese Patent Laid-Open No. 11-131239 discloses a shower head in which the bottom surface of an upper electrode is covered with an electrode cover 301 as shown in FIG.
  • the electrode cover 301 is provided with a pore 303 having the same diameter so as to overlap the gas ejection pore 302 of the upper electrode, and is fixed to the upper electrode with a screw 304.
  • the product is dropped by replacing the electrode cover 301 before the product adhering to the electrode cover 301 is deposited. Can be prevented from being taken in.
  • Patent Document 3 Japanese Patent Publication No. 2002-511529 discloses a shower head 72 that separates a process chamber into an upstream portion and a downstream portion.
  • the shower head 72 is a small aluminum plate having a diameter similar to the diameter of the wafer, and is attached to a large ring 73 in a replaceable manner.
  • the shower head 72 is limited and not larger than the process space. This allows different showerheads to be replaced for use with different size wafers and different processing conditions, and the use of smaller showerheads reduces costs and provides greater process flexibility.
  • the gas flow can be concentrated in the space directly above the substrate.
  • the shower head 72 disclosed in Patent Document 3 Japanese Patent Publication No. 2002-511529 is also formed in a flat disk shape made of aluminum, and warpage occurs due to the temperature rise of the shower head 72.
  • the present invention has been made in view of the above-mentioned conventional problems, and its purpose is to prevent warpage and temperature rise due to thermal expansion of the shower plate, and to suppress the growth of the product on the shower plate, To provide a shower plate, a vapor phase growth apparatus, and a vapor phase growth method capable of forming a compound semiconductor crystal with stable quality on a substrate to be processed.
  • the shower plate of the present invention is a shower plate for protecting the shower head, and is characterized by including a positioning mechanism for aligning the position of the gas discharge hole of the shower head and the plate hole of the shower plate.
  • the vapor phase growth apparatus of the present invention is a vapor phase growth apparatus provided with a shower plate for protecting a shower head, and the shower plate includes a central plate having a plurality of plate holes and a peripheral plate for holding the central plate.
  • the space portion is provided between the end surface of the center plate and the side surface of the peripheral plate facing the end surface of the center plate, and the space portion has a space larger than the expansion due to the thermal expansion of the center plate.
  • the central plate is arranged in the shower head so that the gas discharge hole of the shower head and the plate hole of the central plate are coaxial, and the peripheral plate holding the central plate is fixed to the shower head.
  • the center plate is thermally expanded toward the space provided in the side surface direction thereof to prevent warping of the center plate.
  • the shower plate, the vapor phase growth apparatus, and the vapor phase growth method of the present invention warpage and temperature rise due to thermal expansion of the shower plate are prevented, and the growth of the product on the shower plate is suppressed, and the substrate to be processed A compound semiconductor crystal with stable quality can be formed on the film.
  • FIG. 1 shows an embodiment of a vapor phase growth apparatus according to the present invention, and is a schematic diagram showing an overall configuration of the vapor phase growth apparatus.
  • 2 is a plan view of a shower plate of Example 1.
  • FIG. 3 is a cross-sectional view of the shower plate of Example 1.
  • FIG. It is sectional drawing to which the A section of FIG. 1 was expanded. It is a disassembled perspective view of the shower plate of Example 2.
  • FIG. 6 is a schematic diagram illustrating an overall configuration of a vapor phase growth apparatus according to a fourth embodiment. 6 is a plan view of a shower plate of Example 4.
  • FIG. 6 is a cross-sectional view of a positioning pin of Example 4.
  • FIG. It is a perspective view of the positioning pin of Example 4. It is sectional drawing to which the B section of FIG. 6 was expanded. It is a perspective view which shows another form of the shower plate of Example 4.
  • FIG. It is sectional drawing which used another shower plate for the B section of FIG. It is a disassembled perspective view which shows the modification of the shower plate of Example 5.
  • FIG. It is sectional drawing to which the holding
  • FIG. 6 is a cross-sectional view of a positioning pin of Example 4.
  • FIG. It is a perspective view of the positioning pin of Example 4. It is sectional drawing to which the B section of FIG. 6 was expanded. It is a perspective view which shows another form of the shower plate of Example 4.
  • FIG. It is
  • FIG. 1 shows an example of a schematic configuration of an MOCVD apparatus 100 as a vapor phase growth apparatus of the present invention.
  • the MOCVD apparatus 100 of the present embodiment includes a reaction furnace 1 that isolates the inside from the atmosphere side, and a reaction external space separated by a reaction chamber partition wall 2 in the reaction furnace 1. 3 and reaction chamber 4 are provided.
  • a purge gas supply pipe 5 is connected to the reaction external space 3 and purge gas (N 2 gas, H 2 gas) is introduced.
  • the reaction chamber 4 is provided with a substrate holder 7 on which the substrate 6 to be processed is placed.
  • the substrate holding unit 7 is provided at one end of the rotation transmitting unit 8 and can be rotated by a rotation mechanism (not shown).
  • a substrate heater 9 for heating the substrate 6 to be processed is provided below the substrate holder 7.
  • the shower head 10 is detachably disposed on the upper portion of the reaction furnace 1.
  • the reaction furnace 1 and the shower head 10 are sealed by an O-ring 11a, and the inside of the reaction furnace 1 can be exhausted from the gas discharge port 12 to be kept airtight.
  • the shower head 10 includes a first gas distribution space 13 that is filled with a first gas, and a second gas distribution space 14 that is filled with a second gas different from the first gas, and the first gas distribution space 13 and the second gas.
  • An O-ring 11b is provided between the distribution space 14 and an O-ring 11c is provided between the second gas distribution space 14 and the top plate 14c so that each space can be separated. The airtight state of each space is maintained.
  • the lower part of the shower head 10 is provided with a refrigerant space 15 filled with refrigerant, and the lower wall surface 10a is cooled by the refrigerant space 15 so that the temperature is controlled to be uniform. .
  • the shower plate 20 that prevents the product from adhering to the lower wall surface 10 a of the shower head 10 is disposed so as to face the substrate holding portion 7 that holds the substrate 6 to be processed, and is fixed with screws 16.
  • the shower plate 20 includes a central plate 21 having a plurality of plate holes 21a and a peripheral plate 22 that holds the central plate 21 and makes contact with the lower wall surface 10a.
  • a second gas containing a group V element is introduced into the second gas distribution space 14 from the second gas introduction port 14 a and passes through the plurality of second gas supply pipes 14 b penetrating the refrigerant space 15. After being cooled, the gas is introduced into the reaction chamber 4 from the plate hole 21a of the central plate 21 communicating with the gas discharge hole H2 of the second gas supply pipe 14b.
  • the first gas and the second gas are introduced into the reaction chamber 4 separately without being mixed inside the shower head 10, so that the gas phase reaction occurs inside the shower head 10. Is prevented from occurring.
  • the substrate 6 to be processed held by the substrate holder 7 is heated to a high temperature by the substrate heater 9 and the first gas and the second gas introduced into the reaction chamber 4 reach the substrate 6 to be processed at a high temperature.
  • the gas phase reaction is promoted, and a compound semiconductor thin film is formed on the substrate 6 to be processed.
  • the reaction gas that has passed over the substrate 6 to be processed is discharged from the gas discharge port 12 and made harmless by an exhaust gas processing apparatus (not shown).
  • FIGS. 2A is a plan view of the shower plate 20 viewed from the substrate 6 to be processed
  • FIG. 2B is a cross-sectional view taken along the line BB in FIG. 2A
  • FIG. 3 is an enlarged cross-sectional view of part A of the MOCVD apparatus 100 shown in FIG.
  • the shower plate 20 includes a central plate 21 having a plurality of plate holes 21a and a peripheral plate 22 that holds the central plate 21 and makes contact with the lower wall surface 10a.
  • the central plate 21 is provided with a plurality of plate holes 21a so as to correspond to the gas discharge holes H1 and H2 of the shower head 10, and each plate hole 21a is formed in the gas discharge holes H1 and H2 with respect to the shower head 10. Arranged to overlap. Accordingly, the gas discharge holes H1 and H2 and the plate holes 21a are coaxial and can introduce the reaction gas into the reaction chamber 4.
  • the peripheral plate 22 holds the end 21b of the central plate 21 in the periphery, and brings the central plate 21 into contact with the lower wall surface 10a of the shower head 10.
  • the peripheral plate 22 includes a screw hole 22a for fixing the peripheral plate 22 to the lower wall surface 10a of the shower head 10 with a screw 16, and a holding portion 22b for holding the central plate 21 on a side surface facing the end surface of the central plate 21. Is formed in a notch shape.
  • a predetermined space is provided between the end surface of the central plate 21 and the side surface 22c of the peripheral plate 22 facing the end surface 21c of the central plate 21.
  • a portion 23 is provided. This space portion 23 is a space equal to or larger than the extension when the central plate 21 is thermally expanded.
  • the peripheral plate 22 is fixed to the lower wall surface 10a of the shower head 10 with screws 16 while holding the central plate 21 disposed so that the plate holes 21a overlap the gas discharge holes H1 and H2.
  • FIG. 3 is an enlarged view of part A in the vapor phase growth apparatus 100 shown in FIG. 1 and shows a state in which the shower plate 20 is attached to the lower wall surface 10 a of the shower head 10.
  • the portion where the shower plate 20 is divided into a central plate 21 and a peripheral plate 22 is outside the substrate holding portion 7 (hereinafter referred to as a heating region) heated to a high temperature during film formation (hereinafter referred to as a heating region). It is arranged in a region (referred to as a non-heated region).
  • the central plate 21 is arranged in the heating region and the temperature rises at the time of film formation, but the peripheral plate is arranged in the non-heating region and is kept at a lower temperature than the central plate 21, A temperature gradient is generated between the central plate 21 and the peripheral plate 22.
  • the shower plate 20 is divided into a central plate 21 and a peripheral plate 22, heat conduction from the central plate 21 to the peripheral plate 22 is suppressed, and the temperature distribution of the central plate 21 and the peripheral plate 22 is different. It becomes small and the curvature by a part of plate becoming high temperature and thermally expanding can be prevented.
  • the central plate 21 is not directly fixed to the lower wall surface 10a of the shower head 10, and is held by the frictional force of the contact surface of the first holding portion 22b of the peripheral plate 22.
  • the extension can overcome the frictional force and move to the space 23. For this reason, internal stress due to thermal expansion is not applied to the center plate 21, and it is possible to prevent the center plate 21 from warping.
  • the center plate 21 is prevented from warping due to thermal expansion even during film formation, and is held in contact with the lower wall surface 10a of the shower head 10, so that the temperature can be controlled to a low temperature. Therefore, the growth of the product on the surface of the central plate 21 is suppressed, and the decrease in the film forming rate on the substrate 6 to be processed is prevented. Further, clogging of the product in the plate hole 21a and dropping of the product on the substrate 6 to be processed are less likely to occur, and it becomes unnecessary to frequently replace the central plate 21, thereby improving the production capacity of the vapor phase growth apparatus. be able to.
  • the end portion of the central plate 21 and the first holding portion 22b of the peripheral plate 22 overlap so that the shower head lower wall surface 10a does not look into the substrate 6 to be processed. Therefore, the backflow of the reaction gas from the reaction chamber 4 to the shower head 10 side is prevented, and the product is not attached to the lower wall surface 10 a of the shower head 10. For this reason, maintenance such as cleaning for the shower head 10 can be reduced.
  • a step is provided at the end of the central plate 21 and overlapped with the holding portion 22b of the peripheral plate 22, but the end of the central plate 21 has a shape without a step. May be.
  • the end of the central plate 21 and the holding portion 22b of the peripheral plate 22 are provided with alignment markers and unevenness toward the central portion so that the plate hole 21a can be easily aligned with the gas discharge holes H1 and H2.
  • An engaging portion or the like may be provided.
  • FIG. 4 is an exploded perspective view of the shower plate 20 of the second embodiment.
  • the configuration of the central plate 21 or the peripheral plate 22 is different, and the other configurations are the same as those of the first embodiment, and thus detailed description thereof is omitted.
  • the central plate 21 is divided into two at the central portion in the radial direction, and the notches 21 d formed at the respective divided ends are fitted so that the side surfaces are separated from each other and have a gap.
  • a first fitting portion 24 is provided.
  • the extension is absorbed by the space portion 23 and also by the gap provided in the second fitting portion 25. Warpage can be prevented even when the size of the film increases.
  • the central plate 21 and the peripheral plate 22 are divided into a plurality of plate pieces, the size of the component (plate piece) can be reduced as compared with the case where the plate is produced as one member. As a result, even when the apparatus is increased in size, an effect of reducing the manufacturing cost of the central plate 21 and the peripheral plate 22 can be obtained.
  • the first fitting portion 24 of the central plate 21 is shielded so that the contact surfaces of the notch portions 21d overlap each other and the shower head lower wall surface 10a is not looked into from the processed substrate 6 side.
  • the reaction gas introduced into the chamber 4 is prevented from flowing back to the shower head 10 side, and the product growth on the lower wall surface 10a of the shower head 10 is prevented. For this reason, maintenance such as cleaning for the shower head 10 can be reduced.
  • the second fitting portion 25 of the peripheral plate 22 is also shielded so that the contact surfaces of the notch portions 22d overlap each other and the shower head lower wall surface 10a does not look into the substrate 6 to be processed.
  • the reaction gas introduced into the reaction chamber 4 is prevented from flowing back to the shower head 10 side, and the product growth on the lower wall surface 10a of the shower head 10 is prevented. For this reason, maintenance such as cleaning for the shower head 10 can be reduced.
  • peripheral plate 22 demonstrated the structure divided
  • FIG. 5 shows a vapor phase growth apparatus according to the third embodiment, and is an enlarged cross-sectional view of the same part as part A in FIG.
  • the configuration of the holding portions of the end portion 21b of the central plate 21 and the holding portion 22b of the peripheral plate 22 is different, and the other configurations are the same as those of the first embodiment, so detailed description thereof is omitted. .
  • the vapor phase growth apparatus is provided with a lubrication member 26 having lubricity on the contact surface between the end 21 b of the central plate 21 and the holding portion 22 b of the peripheral plate 22. It is a feature.
  • the lubrication member 26 makes the frictional force at the contact surface between the end portion 21b of the central plate 21 and the holding portion 22b of the peripheral plate 22 uniform, and smoothly moves the extension portion of the central plate 21 thermally expanded to the space portion 23. Can be made.
  • the provision of the lubricating member 26 increases the thermal resistance between the end portion 21b of the central plate 21 and the first holding portion 22b of the peripheral plate 22, and from the central plate 21 disposed in the heating region. Since the heat transfer to the peripheral plate 22 arranged in the non-heated region is divided, the entire temperature of the central plate 21 and the peripheral plate 22 can be kept more uniform, and a part of the plate thermally expands locally. It is possible to prevent warping.
  • the material of the lubricating member 23 is preferably a material composed of any one of high purity carbon, pyrolytic carbon coating carbon, pyrolytic carbon, and boron nitride. These materials have lubricity, corrosion resistance against H2 and NH3 gas, heat resistance against heat, and the like, so they are suitable for the internal environment of the reactor 1 of the vapor phase growth apparatus and are provided with the shower plate 20. It is possible.
  • the fourth embodiment includes a positioning mechanism for aligning the gas discharge holes H1 (H2) of the shower head 10 and the plate holes 21a of the central plate 21 in the MOCVD apparatus 100 of the first embodiment. 1 are denoted by the same reference numerals and detailed description thereof is omitted.
  • FIG. 6 is a diagram illustrating a schematic configuration of the MOCVD apparatus 100 according to the fourth embodiment.
  • the central plate 21 is provided with positioning pins 27 for aligning the gas discharge holes H ⁇ b> 1 and H ⁇ b> 2 of the shower head 10 and the plate hole 21 a of the central plate 21. .
  • FIG. 7A is a plan view of the shower plate 20 according to the fourth embodiment, and shows a position where the positioning pin 27 is provided on the central plate 21. As shown in FIG. 7A, the positioning pin 27 is installed near the center of the center plate 21.
  • FIG. 7B is a cross-sectional view of the shower plate 20 and shows a state where the positioning pins 27 are installed on the central plate 21.
  • the positioning pin 27 is inserted into the plate hole 21a of the central plate 21 from the reaction chamber side, and the pin portion 28 at the tip protrudes from the plate hole 21a to the shower head side.
  • the protruding pin portion 28 By fitting the protruding pin portion 28 into the gas discharge hole H1 (or H2) of the shower head 10, the positions of the plate hole 21a and the gas discharge holes H1 and H2 can be easily aligned.
  • the positioning pin 27 may be used to align the position and may be fixed to the gas discharge hole H1 (or H2).
  • the positioning pin 27 is installed in the vicinity of the central portion of the central plate 21, so that the central plate 21 is not prevented from expanding outward due to thermal expansion.
  • the center plate 21 can be prevented from warping.
  • the positioning pin 27 is fixed to the gas discharge hole H1 (or H2), or is installed at at least two places on the central plate 21, thereby restraining the movement of the central plate 21 in the rotational direction, It is possible to prevent displacement between the gas discharge holes H1 and H2 and the plate hole 21a accompanying the rotation of the central plate 21.
  • FIG. 8A is a sectional view of the positioning pin 27, and FIG. 8B is a perspective view of the positioning pin 27.
  • the positioning pin 27 is a bolt-shaped member that is integrally formed in the order of the locking screw 29 and the head portion 30 from the pin portion 28 at the tip. Further, the positioning pin 27 has a through hole 31 penetrating from the pin portion 28 through the central shaft portion of the head 30.
  • the locking screw 29 is male threaded, and the locking screw 29 can be screwed to the plate hole 21a by machining the plate hole 21a of the central plate 21 with a female screw.
  • a hexagonal shape is used so that the head 30 of the positioning pin 27 can be gripped with a tool or the like when screwing.
  • the head 30 is not limited to this shape, and may be a slit shape, a two-chamfered shape, or the like, as long as it is a shape that matches the fastening tool.
  • FIG. 9 is an enlarged view of the main part B of FIG. 6, and shows a state in which the plate hole 21 a of the central plate 21 and the gas discharge hole H 1 (or H 2) of the shower head 10 are aligned by the positioning pin 27. Show. Since the positioning pin 27 is screwed to the center plate 21 and the pin portion 28 protrudes from the center plate 21, the plate portion 21a is inserted into the gas discharge hole H1 (or H2) as a positioning mechanism. And the discharge hole H1 (or H2) can be aligned.
  • the plate hole 21a in which the positioning pin 27 is installed and the gas discharge hole H1 (H2) are not blocked by each other because the positioning pin 27 has the through hole 31, and the positioning pin 27 is installed.
  • the reaction gas can also be introduced into the reaction chamber 4 at the places where the operation is performed.
  • the reaction gas flows through the through hole 31 and is cooled, the temperature rise in the vicinity of the positioning pin 27 can be suppressed. For this reason, it is possible to prevent the adhesion of the product without causing a gas phase reaction due to a temperature rise.
  • the hole diameter of the through-hole 31 is smaller than the hole diameter of the gas discharge hole H1 (H2), the flow velocity of the reaction gas changes at the tip of the pin portion 28, and the reaction gas flow may be stagnation. Such stagnation of the reaction gas generates a product inside the shower head 10.
  • the through hole 31 is provided with a tapered portion 33 in which the diameter of the through hole 31 increases toward the tip 32 of the pin portion 28.
  • the taper portion 33 By having the taper portion 33, the change in the hole diameter from the gas discharge hole H1 (H2) toward the through hole 31 is reduced, so that the stagnation of the flow of the reaction gas at the tip 32 of the pin portion 28 is eliminated, and the shower head It is possible to prevent the product from adhering to the inside.
  • FIG. 10 is a perspective view showing a structure in which the center plate 21 and the positioning pins 27 are integrally formed as another form of the positioning pins 27. As shown in FIG. 10, it is also possible to integrally form the pin portion 28 on the central plate 21 by machining or welding. However, as described above, it is more advantageous in terms of manufacturing cost and manufacturing accuracy that the central plate 21 and the positioning pin 27 are formed separately.
  • the positioning pin 27 can be provided on the shower head 10 side.
  • the first gas supply pipe 13b (second gas supply pipe 14b) is protruded from the lower wall surface 10a of the shower head 10, the diameter of the plate hole 21a of the central plate 21 is enlarged, and the protruding first gas supply pipe 13b is plate-shaped. By fitting into the hole 21a, alignment and misalignment can be prevented in the same manner as the positioning pin 27 described above.
  • FIG. 11 is a cross-sectional view showing a structure in which a counterbore part (concave part) 34 is provided in the central plate 21 and the protrusion of the head 30 of the positioning pin 27 is eliminated.
  • a counterbore part 34 may be formed at a location where the positioning pin 27 of the central plate 21 is installed, and the head 30 of the positioning pin 27 may be placed in the counterbore part 34.
  • the film forming rate, film uniformity, reproducibility, etc. can be improved.
  • Example 5 is a shower plate 20 suitable for a large MOCVD apparatus 100 that processes a plurality of substrates to be processed.
  • the shower plate 20 described in the second embodiment is different in the structure of division, and the other configurations are the same as those in the second embodiment, so detailed description thereof is omitted.
  • FIG. 12 shows an exploded perspective view of the shower plate 20 of the fifth embodiment.
  • the shower plate 20 As the MOCVD apparatus 100 becomes larger, the shower plate 20 also becomes larger.
  • the shower plate 20 When the shower plate 20 is manufactured or when the attached product is cleaned, it is desirable that the shower plate 20 can be divided into small pieces so as to be easily handled.
  • the central plate 21 has, for example, a structure in which the central plate 21 is divided into four in the radial direction from the center.
  • the center plate 21 is equally divided into three or more from the center, the center side of each plate piece is bent downward, and a gap is easily generated between the center plate 21 and the shower head 10.
  • each plate piece is provided with a locked portion 35 on the center side, and the shower head 10 is provided with a locking portion 40 for locking the locked portion 35 of each plate piece.
  • the locked portion 35 is formed with a concave groove portion 36 having a U-shaped cross section on the end face on the center side of each plate piece.
  • locking part 40 consists of a cylindrical body which has the convex edge part 41, and is being fixed to the center part of the shower head lower wall surface 10a with a screw
  • FIG. 13 is a cross-sectional view showing a state where the locked portion 35 of each plate piece is locked to the locking portion 40.
  • FIG. 14 shows a cross-sectional structure of the locked portion 35 and the locking portion 40 of the sixth embodiment.
  • the through-hole 37 is formed in the center side edge part of each plate piece.
  • the locking portion 40 is formed with a screw hole 42 corresponding to the through hole 37 in the central portion of the shower head lower wall surface 10a. Then, the through hole 37 of each plate piece is locked to the screw hole 42 of the shower head 10 with a screw 43, whereby the center side of each plate piece is held in contact with the shower head 10.
  • the locked portion 35 and the locking portion 40 can be easily manufactured, and a structure in which maintenance such as cleaning and repair can be easily performed can be achieved.
  • the screw 43 that locks the through hole 37 of the locked portion 35 may be formed in the recess 38 so as not to protrude.
  • the plate hole 21a of the plate piece is used for the through hole 37 as the locked portion 35, and the screw hole 42 is provided in the gas discharge hole H1 (H2) as the locking portion 40, so that the through hole 31 shown in the fourth embodiment is used. It may be locked by a screw 43 such as a positioning pin 27 having
  • FIG. 15 shows a state in which the plate hole 21a serving as the locked portion 35 is locked to the gas discharge hole H1 having the locking portion 40 by the positioning pin 27 having the through hole 31 and threaded.
  • the reaction gas flows into the through hole 31 of the locked positioning pin 27, the locked portion 35 and the locking portion 40 are cooled, and the temperature rise can be suppressed.
  • the shower plate 20 desirably has a thermal conductivity of 100 W / (m ⁇ K) or more and a thermal expansion coefficient of 6 ⁇ 10E-6 / ° C. or less.
  • the thermal conductivity is 100 W / (m ⁇ K) or more
  • the surface temperature of the shower plate 20 is kept low, and the temperature difference from the back surface becomes small.
  • the thermal expansion coefficient is 6 ⁇ 10E ⁇ 6 / ° C. or less
  • thermal expansion becomes difficult and the amount of elongation becomes small. For this reason, the warp of the shower plate 20 is prevented, the growth of the product on the surface of the shower plate 20 is suppressed, and the film formation rate, film uniformity and film reproducibility on the substrate 6 to be processed are ensured.
  • An obtained vapor phase growth apparatus and vapor phase growth method can be provided.
  • the material of the central plate 21 and the peripheral plate 22 constituting the shower plate 20 is preferably any of molybdenum or tungsten, high purity carbon, SiC coated carbon, TaC coated carbon, pyrolytic carbon coated carbon, and pyrolytic carbon. . Since these materials are materials having high thermal conductivity and low thermal expansion coefficient, they have the effect of preventing the warp of the shower plate 20 as described above, and have corrosion resistance against H2 and NH3 gas. The durability of 20 can be improved. For this reason, since the replacement frequency of the shower plate 20 can be reduced, tact time reduction and cost reduction can be achieved.
  • the material of the positioning pin 27 is preferably any of molybdenum or tungsten, high purity carbon, SiC coated carbon, TaC coated carbon, pyrolytic carbon coated carbon, and pyrolytic carbon. These materials are materials having a high thermal conductivity and a low thermal expansion coefficient, and since there is no difference in thermal expansion between the positioning pin 27 and the shower plate 20, the positioning pin 27 is loosened or the shower plate 20 is distorted. It is prevented. Moreover, since it has corrosion resistance with respect to H2 and NH3 gas, durability of the positioning pin 27 can be improved. For this reason, since the replacement frequency of the positioning pin 27 can be reduced, the tact time can be shortened and the cost can be reduced.
  • the present invention brings about a remarkable effect even in a large apparatus including a multi-furnace furnace that processes a plurality of substrates to be processed.
  • a large apparatus including a multi-furnace furnace that processes a plurality of substrates to be processed.
  • the diameter of the shower head 10 and the shower plate 20 is about 150 mm, but in a multi-furnace furnace that processes seven 6-inch substrates, it is arranged most closely. Even so, the diameter reaches three times 450 mm, and the extension due to the thermal expansion of the shower plate 20 increases three times. Further, when there is a temperature distribution in the shower plate 20, the contribution of deformation due to thermal expansion is further increased.
  • the present invention even in a large apparatus in which the diameters of the shower head 10 and the shower plate 20 are increased, the warp of the shower plate 20 is prevented and the surface temperature of the shower plate 20 does not become high.
  • the growth of the formed product can be suppressed, and the film formation rate, film uniformity, and film reproducibility on the substrate 6 can be ensured.
  • reaction furnace 4 reaction chamber (growth chamber), 6 substrate to be processed, 7 substrate holder, 9 substrate heater, 10 shower head, 20 shower plate, 21 center plate, 21a plate hole, 22 peripheral plate, 22a screw hole , 22b holding part, 23 space part, 24 first fitting part, 25 second fitting part, 26 lubrication member, 27 positioning pin, 35 locked part, 40 locking part, 100 MOCVD apparatus Phase growth equipment).

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention porte sur un appareil de croissance en phase vapeur, lequel appareil comporte une plaque de douche (20) pour protéger une tête de douche (10), et est caractérisé en ce que : la plaque de douche (20) comprend une plaque centrale (21) présentant une pluralité de trous de plaque (21a) et une plaque périphérique (22) supportant la plaque centrale (21) ; une partie d'espace (23) est présente entre une face d'extrémité de la plaque centrale (21) et une face latérale de la plaque périphérique (22) faisant face à la face d'extrémité de la plaque centrale (21) ; et la partie d'espace (23) comporte un espace supérieur ou égal à une extension de la plaque centrale (21) due à la dilatation thermique. De ce fait, un voile et une augmentation de température dus à une dilatation thermique de la plaque de douche (20) peuvent être évités, et la croissance d'un produit sur la plaque de douche (20) peut être restreinte, de telle sorte qu'un appareil de croissance en phase vapeur apte à former un cristal semi-conducteur composite avec une qualité stable sur un substrat de traitement peut être procuré.
PCT/JP2012/053105 2011-03-28 2012-02-10 Plaque de douche, appareil de croissance en phase vapeur et procédé de croissance en phase vapeur Ceased WO2012132575A1 (fr)

Applications Claiming Priority (4)

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JP2011-069158 2011-03-28
JP2011069158 2011-03-28
JP2011143636A JP2012216744A (ja) 2010-11-10 2011-06-29 気相成長装置及び気相成長方法
JP2011-143636 2011-06-29

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CN107699866A (zh) * 2017-11-15 2018-02-16 西安鑫垚陶瓷复合材料有限公司 一种改善流场均匀性的装置
CN113604796A (zh) * 2021-03-09 2021-11-05 联芯集成电路制造(厦门)有限公司 提高沉积均匀性的机台及其操作方法
JP2022534383A (ja) * 2019-05-31 2022-07-29 アプライド マテリアルズ インコーポレイテッド 基板上に膜を形成するための方法およびシステム

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DE102015101461A1 (de) * 2015-02-02 2016-08-04 Aixtron Se Vorrichtung zum Beschichten eines großflächigen Substrats
TWI633585B (zh) * 2017-03-31 2018-08-21 漢民科技股份有限公司 用於半導體製程之氣體噴射器與頂板之組合及成膜裝置
CN115004332A (zh) * 2020-01-28 2022-09-02 朗姆研究公司 用于高功率高压力处理的分段式气体分配板

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CN107699866A (zh) * 2017-11-15 2018-02-16 西安鑫垚陶瓷复合材料有限公司 一种改善流场均匀性的装置
CN107699866B (zh) * 2017-11-15 2024-03-01 西安鑫垚陶瓷复合材料股份有限公司 一种改善流场均匀性的装置
JP2022534383A (ja) * 2019-05-31 2022-07-29 アプライド マテリアルズ インコーポレイテッド 基板上に膜を形成するための方法およびシステム
JP7304435B2 (ja) 2019-05-31 2023-07-06 アプライド マテリアルズ インコーポレイテッド 基板上に膜を形成するための方法およびシステム
CN113604796A (zh) * 2021-03-09 2021-11-05 联芯集成电路制造(厦门)有限公司 提高沉积均匀性的机台及其操作方法
CN113604796B (zh) * 2021-03-09 2022-08-30 联芯集成电路制造(厦门)有限公司 提高沉积均匀性的机台及其操作方法

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