WO2012134070A2 - Appareil d'injection de gaz, appareil de dépôt de couche atomique, et méthode de dépôt de couche atomique utilisant l'appareil - Google Patents

Appareil d'injection de gaz, appareil de dépôt de couche atomique, et méthode de dépôt de couche atomique utilisant l'appareil Download PDF

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Publication number
WO2012134070A2
WO2012134070A2 PCT/KR2012/001659 KR2012001659W WO2012134070A2 WO 2012134070 A2 WO2012134070 A2 WO 2012134070A2 KR 2012001659 W KR2012001659 W KR 2012001659W WO 2012134070 A2 WO2012134070 A2 WO 2012134070A2
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Prior art keywords
gas
substrate
supply
suction
atomic layer
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Ceased
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PCT/KR2012/001659
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English (en)
Korean (ko)
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WO2012134070A3 (fr
Inventor
전형탁
박태용
이재상
최동진
전희영
박진규
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Industry University Cooperation Foundation IUCF HYU
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Industry University Cooperation Foundation IUCF HYU
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Priority to CN201280016242.9A priority Critical patent/CN103649368B/zh
Publication of WO2012134070A2 publication Critical patent/WO2012134070A2/fr
Publication of WO2012134070A3 publication Critical patent/WO2012134070A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]

Definitions

  • the present invention relates to an atomic layer deposition apparatus, and more particularly, to provide a gas injection apparatus capable of depositing an atomic layer at atmospheric pressure, an atomic layer deposition apparatus including the same, and an atomic layer deposition method using the apparatus.
  • a semiconductor device, a flat panel display device, and the like go through various manufacturing processes, and among them, a process of depositing a thin film required on a substrate such as a wafer or glass is inevitably performed.
  • a thin film deposition process sputtering, chemical vapor deposition (CVD), atomic layer deposition (ALD) and the like are mainly used.
  • atomic layer deposition method is a nanoscale thin film deposition technique using chemical adsorption and desorption of monoatomic layer. Each reactant is separated and supplied to the chamber in the form of a pulse to the surface of the reactant on the substrate surface. It is a new concept of thin film deposition technology using chemical adsorption and desorption by surface saturation reaction.
  • the conventional atomic layer deposition technique requires a vacuum during the deposition process, an additional apparatus for maintaining and managing the same is required, and the process time is long, resulting in a decrease in productivity.
  • the limited space to secure a vacuum has a problem that is not suitable for the display industry seeking a large area and enlargement.
  • An object of the present invention for solving the above problems is to provide a gas injection apparatus, an atomic layer deposition apparatus including the same, and an atomic layer deposition method using the apparatus to deposit an atomic layer at atmospheric pressure.
  • the present invention for achieving the above object has a first outer circumferential surface surrounding the hole through which gas is supplied, has a guide extending from an area in which a part of the first outer circumferential surface is opened, and the space formed by the guide is a gas outlet.
  • Gas supply pipe used;
  • a gas suction pipe connected to the guide and having a second outer circumferential surface surrounding the outer circumference of the first outer circumferential surface, and having a gas inlet of which a part of the second outer circumferential surface is opened.
  • the present invention for achieving the above object, includes at least two gas injectors that can perform the supply and suction of gas at the same time, the gas injection unit, the first outer peripheral surface and the inducing supply of the gas and the A gas supply pipe having a guide defining a gas outlet for discharging gas to the substrate, and a gas inlet connected to the guide and having a second outer circumferential surface surrounding the periphery of the first outer circumferential surface, wherein a part of the second outer circumferential surface is open;
  • an atomic layer deposition apparatus comprising a gas suction tube.
  • the present invention for achieving the above object, the step of supplying the source gas to the substrate through the first gas injection, and sucking; Supplying and sucking a purge gas to the substrate through a second gas injection unit having a first separation distance from the first gas injection unit; And supplying and sucking the reaction gas to the substrate through a third gas injection part having a second separation distance from the second gas injection part.
  • the deposition is performed at atmospheric pressure, a device and time for securing a separate vacuum are not required. Therefore, the productivity increase effect can be expected and can be applied to the display field because it is easy to enlarge.
  • various heat sources such as halogen lamps and lasers can be used.
  • the heat is only temporarily heated instead of the entire substrate. Thermal diffusion, reduced lifespan, and physical deformation can be prevented.
  • the deposition rate may be increased by using an atmospheric pressure plasma, a UV lamp, and a laser, and a metal thin film and a nitride film may also be deposited.
  • the continuous process can be performed, the pre- and post-treatment can be carried out together in a batch, and multiple source injection apparatuses can be installed to form a multi-component compound.
  • the type of heat source and the supplied thermal energy can be individually corresponded to the decomposition temperature of each source.
  • the gas injection device is installed alternately up and down, double-sided deposition may be possible.
  • FIG. 1 is a perspective view showing a gas injection device according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view taken along line II ′ of the gas injection device of FIG. 1.
  • FIG 3 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.
  • FIG. 5 is a graph of temperature versus position of a substrate surface when a part of the substrate surface is heated by using a halogen lamp on the substrate.
  • FIG. 6 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.
  • FIG. 7 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.
  • FIG. 8 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.
  • FIG. 9 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.
  • normal pressure used in the present invention is a pressure when the pressure is not particularly reduced or increased, usually means a pressure of about 1 atmosphere, such as atmospheric pressure.
  • FIG. 1 is a perspective view showing a gas injection device 100 according to an embodiment of the present invention.
  • the guide has a first outer circumferential surface 111 that surrounds the hole 110 to which gas is supplied, and a guide 112 that extends from an area in which a portion of the first outer circumferential surface 111 is opened. And a second outer circumferential surface 120 connected to the gas supply pipe using the space formed by the 112 as the gas outlet 113 and the guide 112, and surrounding the outer circumference of the first outer circumferential surface 111. 2 provides a gas injection device 100 including a gas suction pipe having a gas suction port 121 in which a part of the outer circumferential surface 120 is opened.
  • An angle between the gas inlet 121 and the gas outlet 113 and the center of the gas injection device 100 may be 5 ° to 90 °.
  • gas may be supplied to the substrate by the gas outlet 113 of the gas injector 100.
  • the gas may be absorbed into the gas inlet 121 so that the gas supply efficiency for the gas deposited on the substrate is lower than that of the supplied gas.
  • the angle between the gas inlet 121 and the gas outlet 113 and the center of the gas injection device 100 is greater than 90 °, the gas inlet for sucking the surrounding gas on the substrate by the gas inlet 121 The efficiency is low.
  • the gas inlet 121 may be disposed at symmetrical positions with respect to the gas outlet 113.
  • the gas inlet 121 is disposed on both sides of the gas outlet 113 to suck the gas remaining on the substrate in the previous step, and then injects the gas of the present step onto the substrate through the gas outlet 113 and again. Since the gas remaining after the reaction on the substrate may be sucked, the gas inlet 121 may be disposed at positions symmetrical with respect to the gas outlet 113.
  • the present invention is not limited thereto, and the gas inlet 121 may be disposed at one side of the gas outlet 113.
  • the gas injection device 100 does not need a vacuum state because the gas supply and suction are performed at the same time, it can be carried out at normal pressure.
  • the gas injection device 100 further includes a gas valve tube 130 mounted in the gas supply pipe to adjust a gas flow rate.
  • the gas valve pipe 130 is rotatably mounted about a central axis of the gas supply pipe.
  • the gas valve tube 130 may include a hole 131 formed in the longitudinal direction of the gas valve tube 130.
  • the hole 131 of the gas valve tube 130 may be integrally formed in the longitudinal direction of the gas valve tube 130 or may be provided in a shape having a predetermined separation distance in the longitudinal direction of the gas valve tube 130. Therefore, it is necessary to adjust the gas injection method according to the reaction process, the gas can be adjusted by the pre-injection or point injection method according to the shape of the hole 131 of the gas valve tube 130.
  • the gas outlet 113 may be disposed along the longitudinal direction of the gas suction pipe to provide gas in a pre-injection or point injection manner, and may be manufactured in the form of a hole having a predetermined distance or in the form of an integrated slit. .
  • FIG. 2 is a cross-sectional view taken along line II ′ of the gas injection device of FIG. 1.
  • the gas valve tube 130 (a) is a gas supply is blocked state and (b) is a gas supply is open state. For example, if you want to complete the deposition process, the gas supply must be shut off. Therefore, the gas valve tube 130 shields the gas supply tube. This shuts off the gas supply.
  • the flow rate of the gas can also be adjusted.
  • FIG 3 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.
  • the substrate 200 is positioned on the heater 210 and the first gas injection unit 140, the first gas injection unit 140, and the first separation distance e are located on the substrate 200. It is possible to provide an atomic layer deposition apparatus in which a second gas injection unit 150 having a) and a third gas injection unit 160 having a second separation distance f from the second gas injection unit 150 are disposed. have.
  • the first separation distance e and the second separation distance f may be adjusted in consideration of the time required for each reaction step.
  • the substrate 200 moves from the right side to the left side in the direction of the arrow, and the first gas injector 140 to the third gas injector 160 are fixed, and supply / suction the source gas and the purge. Supply / suction of gas and supply / suction of the reaction gas may be performed simultaneously.
  • the first gas injection unit 140 to the third gas injection unit 160 move, supply / suction of the source gas, and supply / suction of the purge gas. And supply / suction of the reaction gas may be performed at the same time.
  • the first gas injection unit 140 to the third gas injection unit 160 and the substrate 200 may move in opposite directions, or the movement in the opposite direction may reciprocate. When the substrate and the gas injection unit move at the same time, the shortening effect of the distance can be expected.
  • the source gas is supplied from the first gas injection unit 140 onto the substrate 200, and the purge gas is injected from the second gas injection unit 150 onto the substrate 200. Thereafter, a reaction gas is injected from the third gas injection unit 160 onto the substrate 200 to deposit an atomic layer.
  • the source gas may be a gas of any one of silane (Silane, SiH 4 ), disilane (Disilane, Si 2 H 6 ), and silicon tetrafluoride (SiF 4 ) including silicon.
  • the reaction gas may be oxygen (O 2 ) or ozone (O 3 ) gas.
  • the purge gas may use any one of argon (Ar), nitrogen (N 2 ), and helium (He), or a mixture of two or more.
  • the present invention is not limited thereto, and the number and type of the source gas, the purge gas, or the reactant gas may vary substantially.
  • the distance c between the gas injection parts and the substrate 200 is preferably within several mm. More preferably, the distance c between the gas injection parts and the substrate 200 is 0.1 mm to 5 mm. If the distance between the gas injection parts and the substrate 200 is less than 0.1 mm, the gas injection parts may directly contact the substrate. In addition, when the distance exceeds 5mm, there is a problem that the supply of the source gas and the like is not made smoothly.
  • FIG. 4 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.
  • a substrate 200 is positioned on a cooling pad 220 and a halogen lamp 230 is disposed on the substrate 200.
  • a first gas injection unit 140, a second gas injection unit 150 having a first separation distance e from the first gas injection unit 140, and the second gas are disposed on the substrate 200.
  • the third gas injection unit 160 having the injection unit 150 and the second separation distance f may be disposed.
  • the first separation distance e and the second separation distance f may be adjusted in consideration of the time required for each reaction step.
  • the substrate 200 moves from right to left in the direction of the arrow.
  • the present invention is not limited thereto, and the substrate 200 may be fixed and the gas injection unit may move.
  • the gas injection unit and the substrate 200 may move in opposite directions, or the movement in the opposite direction may reciprocate. When the substrate and the gas injection unit move at the same time, the shortening effect of the distance can be expected.
  • the distance c between the gas injection parts and the substrate 200 is preferably within several mm. More preferably, the distance c between the gas injection parts and the substrate 200 is 0.1 mm to 5 mm.
  • the surface of the substrate 200 is heated using the halogen lamp 230 and the bottom surface of the substrate 200 is continuously cooled by the cooling pad 220. This prevents the temperature of the entire substrate 200 from rising due to the surface heating by the halogen lamp 230. Therefore, the heating of the substrate 200 may be performed on a specific portion of the substrate 200 where the supply and suction of the source gas is performed.
  • a source gas is supplied from the first gas injection unit 140 to a specific portion of the heated substrate 200, and a purge gas is injected from the second gas injection unit 150 onto the substrate 200. Thereafter, a reaction gas is injected from the third gas injection unit 160 onto the substrate 200 to deposit an atomic layer.
  • Supply / suction of a source gas, supply / suction of the purge gas, and supply / suction of the reaction gas may be performed at normal pressure on the substrate. This is because there is no need for vacuum because the gas supply / suction process is performed at the same time.
  • the cooling unit 231 of the halogen lamp 230 prevents heating of a portion outside the surface of the substrate 200, the cooling portion 231 may prevent the temperature of the entire substrate 200 from rising.
  • FIG 5 illustrates a case in which the cooling pad 220 is installed on the bottom surface of the substrate 200 and the halogen lamp 230 is used on the substrate 200 when the halogen lamp 230, which is a heating means, is installed on the substrate 200.
  • the halogen lamp 230 which is a heating means
  • FIG. 6 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.
  • the substrate 200 is positioned on the cooling pad 220, and the heating means 240 is disposed on the substrate 200.
  • the heating means 240 may be a halogen lamp, UV lamp or laser. However, the present invention is not limited thereto, and any device capable of heating the surface of the substrate 200 may be used.
  • a first gas injector 140, a second gas injector 150 having a first separation distance e from the first gas injector 140, and the second gas are disposed on the substrate 200.
  • the third gas injection unit 160 having the injection unit 150 and the second separation distance f may be disposed. The first separation distance e and the second separation distance f may be adjusted in consideration of the time required for each reaction step.
  • the substrate 200 moves from right to left in the direction of the arrow.
  • the present invention is not limited thereto, and the substrate 200 may be fixed and the gas injection unit may move.
  • the gas injection unit and the substrate 200 may move in opposite directions, or the movement in the opposite direction may reciprocate.
  • the distance c between the gas injection parts and the substrate 200 is preferably within several mm. More preferably, the distance c between the gas injection parts and the substrate 200 is 0.1 mm to 5 mm.
  • FIG. 7 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.
  • a substrate 200 is positioned on a cooling pad 220 and a halogen lamp 230 is disposed on the substrate 200.
  • a first gas injection unit 140, a second gas injection unit 150 having a first separation distance e from the first gas injection unit 140, and the second gas are disposed on the substrate 200.
  • the atmospheric pressure plasma generator 170 having the injection unit 150 and the second separation distance f may be disposed.
  • the first separation distance e and the second separation distance f may be adjusted in consideration of the time required for each reaction step. Since the atomic layer may be deposited at atmospheric pressure, the atmospheric pressure plasma generator 170 may be used when the reaction gas is injected onto the substrate 200.
  • the atmospheric pressure plasma generating device 170 is a shape of a cold plasma torch.
  • the substrate 200 moves from right to left in the direction of the arrow.
  • the present invention is not limited thereto, and the substrate 200 may be fixed and the gas injection unit may move.
  • the gas injection unit and the substrate 200 may move in opposite directions, or the movement in the opposite direction may reciprocate.
  • the distance c between the gas injection parts and the substrate 200 is preferably within several mm. More preferably, the distance c between the gas injection parts and the substrate 200 is 0.1 mm to 5 mm.
  • FIG. 8 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.
  • a substrate 200 is positioned on a cooling pad 220 and a halogen lamp 230 is disposed on the substrate 200. Thereafter, a first gas injector 140, a second gas injector 150 having a first separation distance e from the first gas injector 140, and the second gas are disposed on the substrate 200.
  • the third gas injection unit 160 having the injection unit 150 and the second separation distance f may be disposed. The first separation distance e and the second separation distance f may be adjusted in consideration of the time required for each reaction step.
  • the UV lamp 250 may be disposed to react the remaining source gas in the next step of the third gas injection unit 160. However, the present invention is not limited thereto. Since the cooling unit 251 of the UV lamp 250 prevents heating a portion outside the surface of the substrate 200, the cooling unit 251 may prevent the temperature of the entire substrate 200 from rising.
  • the UV lamp 250 When the UV lamp 250 is used in the deposition process, there is a problem that the efficiency is lowered due to deposition on the surface of the lamp glass during deposition. However, in the case of the present invention, when the UV lamp 250 has a distance from the source, only the source heat-adsorbed on the surface of the substrate 200 is left while undergoing a sufficient suction process at each gas injection part, thereby avoiding lamp contamination. have.
  • the substrate 200 moves from right to left in the direction of the arrow.
  • the present invention is not limited thereto, and the substrate 200 may be fixed and the gas injection unit may move.
  • the gas injection unit and the substrate 200 may move in opposite directions, or the movement in the opposite direction may reciprocate.
  • the distance c between the gas injection parts and the substrate 200 is preferably within several mm. More preferably, the distance c between the gas injection parts and the substrate 200 is 0.1 mm to 5 mm.
  • FIG. 9 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.
  • an atomic layer deposition apparatus in which a substrate 200 is positioned on a cooling pad 220 and a gas injection unit, an atmospheric pressure plasma generator, and a heating unit are miniaturized into a single integrated module on the substrate 200.
  • Module 300 is disposed. As shown in FIG. 9, the surface of the substrate is heated, and the source gas 303, the purge gas 304, and the plasma gas 302 are sequentially injected and sucked onto the substrate 200. The sucked gas 305 is discharged through a predetermined path. Since the cooling unit 301 of the atomic layer deposition apparatus module 300 prevents heating of a portion outside the surface of the substrate 200, there is an advantage of preventing the temperature of the entire substrate 200 from rising.
  • the integrated module may be configured in a configuration according to necessity, and a plurality of these may be arranged to allow atomic cycle deposition of several cycles by one movement of the substrate or module.
  • the distance d between the atomic layer deposition apparatus module 300 and the substrate is preferably within several mm. More preferably, the distance d between the atomic layer deposition apparatus module 300 and the substrate is 0.1 mm to 2 mm. If the distance between the gas injection device and the substrate is less than 0.1 mm, the gas injection device may directly contact the substrate. In addition, when the interval exceeds 2mm, a problem may occur that the deposition efficiency of the atomic layer deposition apparatus module 300 is reduced.
  • first outer circumferential surface 112 guide
  • gas outlet 120 second outer peripheral surface
  • hole 140 first gas injection unit
  • atmospheric plasma generator 200 substrate
  • heater 220 cooling pad
  • halogen lamp 231 cooling unit
  • heating means 250 UV lamp
  • cooling unit 300 atomic layer deposition apparatus module
  • cooling unit 302 plasma gas
  • source gas 304 purge gas

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un appareil d'injection de gaz, un appareil de dépôt de couche atomique, et une méthode de dépôt de couche atomique utilisant l'appareil. L'appareil d'injection de gaz est configuré sous la forme d'un seul tuyau. Le gaz est introduit dans un substrat par la partie centrale de l'appareil d'injection de gaz, et simultanément le gaz fourni par les trous d'admission de gaz formés dans des parties spécifiques le long de la surface extérieure du tuyau d'alimentation en gaz est aspiré. De ce fait, lorsque l'appareil d'injection de gaz est placé à proximité du substrat, l'alimentation et l'aspiration du gaz peuvent être réalisées en même temps. Là, comme le processus de dépôt est effectué à une pression normale, il n'est pas nécessaire de fournir un appareil supplémentaire et de réserver une période pour produire du vide. Et comme on peut effectuer des processus consécutifs, on peut effectuer des pré- et post-traitements ensemble et en même temps. De plus, on peut utiliser une pluralité d'appareils sources d'injection pour former un composé à plusieurs composants. Dans ce cas, le type de source de chaleur et d'énergie thermique fournie peut être adapté individuellement à la température de décomposition de chaque source.
PCT/KR2012/001659 2011-03-31 2012-03-07 Appareil d'injection de gaz, appareil de dépôt de couche atomique, et méthode de dépôt de couche atomique utilisant l'appareil Ceased WO2012134070A2 (fr)

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CN103866293A (zh) * 2012-12-13 2014-06-18 丽佳达普株式会社 原子层沉积装置

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CN103866293A (zh) * 2012-12-13 2014-06-18 丽佳达普株式会社 原子层沉积装置

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KR101311983B1 (ko) 2013-09-30
CN103649368B (zh) 2016-03-02
CN103649368A (zh) 2014-03-19
WO2012134070A3 (fr) 2012-11-29
KR20120111108A (ko) 2012-10-10

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