WO2012134226A2 - Composition de solution de nettoyage pour photolithographie - Google Patents

Composition de solution de nettoyage pour photolithographie Download PDF

Info

Publication number
WO2012134226A2
WO2012134226A2 PCT/KR2012/002392 KR2012002392W WO2012134226A2 WO 2012134226 A2 WO2012134226 A2 WO 2012134226A2 KR 2012002392 W KR2012002392 W KR 2012002392W WO 2012134226 A2 WO2012134226 A2 WO 2012134226A2
Authority
WO
WIPO (PCT)
Prior art keywords
formula
cleaning liquid
liquid composition
photolithography
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/002392
Other languages
English (en)
Korean (ko)
Other versions
WO2012134226A3 (fr
Inventor
오승근
이재우
김재현
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongjin Semichem Co Ltd
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020110030053A external-priority patent/KR101861311B1/ko
Priority claimed from KR1020110030055A external-priority patent/KR101861310B1/ko
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of WO2012134226A2 publication Critical patent/WO2012134226A2/fr
Publication of WO2012134226A3 publication Critical patent/WO2012134226A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
    • C11D3/3765—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions in liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3769—(Co)polymerised monomers containing nitrogen, e.g. carbonamides, nitriles or amines
    • C11D3/3773—(Co)polymerised monomers containing nitrogen, e.g. carbonamides, nitriles or amines in liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3769—(Co)polymerised monomers containing nitrogen, e.g. carbonamides, nitriles or amines
    • C11D3/3776—Heterocyclic compounds, e.g. lactam
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking

Definitions

  • the present invention relates to a cleaning liquid composition, and more particularly, to prevent pattern collapse and line width roughness (LWR) generated during photoresist pattern formation, and to increase etching resistance by curing the surface of the pattern through a heating process.
  • the present invention relates to a cleaning liquid composition for photolithography.
  • the yield of a semiconductor device may be lowered due to defects such as a resist pattern defect, an increase in a numerical value of line width roughness (LWR), and a pattern collapse.
  • LWR line width roughness
  • extreme ultraviolet lithography (EUVL) technology with a wavelength of 13.4 nm of an exposure source is used, and in order to use the above technique, You must overcome the problem. Phenomenon such as increase in resist scum, line width roughness (LWR), pattern collapse, etc. is mostly caused by deterioration of the photoresist composition.
  • LWR line width roughness
  • pattern collapse etc.
  • the above-described defects can be overcome by a cleaning technique. For example, in general, cleaning is performed using pure water (cleaning liquid) during the process. However, when surfactant is added to the cleaning liquid to reduce the surface tension of the cleaning liquid, the pattern falling during wafer drying through spin out is prevented.
  • Partially insoluble polymers which are not dissolved in the resist pattern due to the hydrophilic group of the surfactant can be removed together, resulting in suppressing an increase in the numerical value of the line width roughness (LWR).
  • LWR line width roughness
  • an object of the present invention is to provide a cleaning liquid composition for photolithography which can prevent the pattern collapse of the photoresist pattern and the numerical increase of the line width roughness (LWR), and harden the pattern surface to increase the etching resistance.
  • LWR line width roughness
  • the present invention is an acidic monomolecular compound represented by the following formula (1); And a cleaning liquid composition for photolithography (hereinafter referred to as a first cleaning liquid composition if necessary) containing a solvent.
  • each R is independently a hydrogen atom (H), an alcohol group (-OH), a methyl group (-CH 3 ), a sulfonic acid group (-SO 3 H) or an amine group (-NH 2 ), n is It is an integer of 1-10.
  • the present invention is a water-soluble polymer comprising a repeating unit represented by the formula (3); And a cleaning liquid composition for photolithography (hereinafter referred to as a second cleaning liquid composition if necessary) containing a solvent.
  • R 1 to R 3 are each independently a hydrogen atom (H) or a linear, branched or cyclic hydrocarbon group having 1 to 20 carbon atoms, and X is not present, or is a linear or branched carbon group having 1 to 20 carbon atoms. Or a cyclic hydrocarbon group.
  • the present invention also provides a method for forming a photoresist film on a semiconductor substrate on which an etched layer is formed; Exposing and developing the photoresist film to form a photoresist pattern; Washing the photoresist pattern with the cleaning liquid composition for photolithography; And drying the washed photoresist pattern, heating (hard baking) to 110 to 200 ° C., and curing the photoresist surface.
  • the first cleaning liquid composition according to the present invention comprises an acidic monomolecular compound
  • the second cleaning liquid composition according to the present invention includes a water-soluble polymer in the form of a salt.
  • the cleaning liquid composition (first cleaning liquid composition) for photolithography according to the present invention includes an acidic monomolecular compound represented by the following formula (1), and a solvent.
  • each R is independently a hydrogen atom (H), an alcohol group (-OH), a methyl group (-CH 3 ), a sulfonic acid group (-SO 3 H) or an amine group (-NH 2 ), n is It is an integer of 1-10. That is, when n is 2 or more, R of each n repeating unit may be the same or different.
  • the acidic monomolecular compound used in the present invention may crosslink with the photosensitive polymer on the surface of the photoresist pattern when heated (hard bake) (see Formula 2 below) to cure the surface of the photoresist pattern.
  • the content of the acidic monomolecular compound is 0.001 to 5% by weight, preferably 0.005 to 1% by weight, more preferably 0.01 to 0.5% by weight, most preferably 0.01 to 0.1, based on the total cleaning liquid composition for photolithography. Weight percent. If the content of the acidic monomolecular compound is less than 0.001% by weight, the surface of the pattern may not be cured even when heated. If the content of the acidic monomolecular compound is more than 5% by weight, the photoresist pattern may be damaged by increasing the acidity.
  • R and n are as defined in Chemical Formula 1, and A and B represent functional groups included in conventional photosensitive polymers.
  • Representative examples of the acidic monomolecular compound represented by Chemical Formula 1 may include an acidic monomolecular compound represented by the following Chemical Formulas 1a to 1l.
  • the cleaning liquid composition (second cleaning liquid composition) for photolithography includes a water-soluble polymer and a solvent comprising a repeating unit represented by the following formula (3).
  • R 1 to R 3 are each independently a hydrogen atom (H) or a linear, branched or cyclic hydrocarbon group having 1 to 20 carbon atoms, preferably 1 to 10, more preferably 1 to 5 carbon atoms, eg
  • it is an alkyl group or an aryl group, preferably an alkyl group
  • X is absent or a linear, branched or cyclic hydrocarbon group having 1 to 20 carbon atoms, preferably 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms, eg
  • it is an alkylene group or an arylene group
  • R ⁇ 1> -R ⁇ 3> and X may connect with each other and form a cyclic structure.
  • the water-soluble polymer used in the present invention includes a water-soluble monomer in a salt form, and crosslinks and reacts with the photosensitive polymer on the surface of the photoresist pattern during heating (hard bake) to cure the surface of the photoresist pattern.
  • the mol% of the repeating unit of Formula 3 is 1 to 100 mol%, preferably 10 to 90 mol%, more preferably 20 to 80 mol%,
  • the remaining repeating units may include conventional repeating units used for the water soluble polymer.
  • repeating unit represented by Formula 3 may include repeating units represented by the following Formulas 3a to 3b.
  • water-soluble polymer including the repeating unit represented by the formula (3) can be illustrated a water-soluble polymer represented by the following formula (4).
  • R 1 to R 3 and X are as defined in Formula 3,
  • R 4 is a hydrogen atom (H) or a methyl group (-CH 3 )
  • the water-soluble polymer may be prepared by a conventional polymerization method, for example, may be prepared according to the same method as the preparation example.
  • the weight average molecular weight of the water-soluble polymer is preferably 1,000 to 100,000, more preferably 1,000 to 10,000, most preferably 1,000 to 5,000. If the weight average molecular weight of the water-soluble polymer is less than 1,000, the pattern surface may not be cured even when heated (hard bake). If the weight average molecular weight is 100,000, the solubility of water-soluble polymer in water is poor. There is a possibility that a defect may occur.
  • the content of the water-soluble polymer is 0.001 to 5% by weight, preferably 0.005 to 1% by weight, more preferably 0.01 to 0.5% by weight, most preferably 0.01 to 0.1% by weight based on the total cleaning liquid composition for photolithography. to be. If the content of the water-soluble polymer is less than 0.001% by weight, the surface of the pattern may not be cured even when heated (hard bake). If the content of the water-soluble polymer exceeds 5% by weight, there may be a problem of scum defects. .
  • the solvent used in the present invention is for washing the photoresist pattern, and water (pure water) can be used, and a mixed solvent obtained by mixing water and a water-soluble organic solvent can be used, if necessary.
  • water-soluble organic solvent a monohydric or polyhydric alcohol-based organic solvent may be used, and the monohydric alcohol may be methanol, ethanol, propanol, isopropyl alcohol (IPA), or the like.
  • the polyhydric alcohol may be exemplified by ethylene glycol, propylene glycol, diethylene glycol, glycerin, alkyl ether or esters thereof, and the like.
  • the content of the solvent is the remaining components except for the acidic monomolecular compound with respect to the cleaning liquid composition for the entire photolithography, and when the mixed solvent is used as the solvent, the content of the water-soluble organic solvent is 0.01 to the total solvent, 50% by weight, preferably 0.1 to 20% by weight.
  • the mixed solvent if the content of the water-soluble organic solvent exceeds 50% by weight relative to the total solvent, the photoresist pattern is dissolved in the solvent may cause a pattern distortion phenomenon.
  • the cleaning liquid composition for photolithography according to the present invention may further include additives such as a surfactant as necessary.
  • the surfactant is for lowering the surface tension of the cleaning liquid composition.
  • the surfactant suppresses pattern collapse by lowering stresses between patterns generated when spin-drying the cleaning liquid composition.
  • a conventional water-soluble surfactant can be used.
  • water-soluble anionic surfactants include lauryl triethanolamine, ammonium lauryl sulfate, triethanol amine polyoxyethylene alkyl ether sulfates, and the like.
  • activator include polyoxyethylene lauryl ether, polyoxyethylene cetyl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene higher alcohol ether, polyoxyethylene octyl phenyl ether, and polyoxy.
  • water-soluble amphoteric surfactant may include laurylbetaine, stearylbetaine, lauryl dimethyl amineoxide (RDMAO), 2-alkyl-N-carboxymethyl- N-hydroxyethyl imidazolinium betaine etc. can be illustrated.
  • surfactants such as 3M's NOVEC 4200 and FC-4430, Dupont's FSN and FSO, Air-product's S-465 and S-485W, Rhodia's 25R2 and L-62, etc., NEOS's 212M , 215M, etc., DIC's F-410, F-477, etc., WAKO's NCW1001, NCW1002, etc. can be used individually or in mixture.
  • the content of the surfactant is 0.001 to 5 parts by weight, preferably 0.001 to 1 part by weight, more preferably 0.01 to 0.5 part by weight based on 100 parts by weight of the total cleaning liquid composition for photolithography. And most preferably 0.05 to 0.1 parts by weight.
  • the content of the surfactant is less than 0.001 part by weight based on 100 parts by weight of the total cleaning liquid composition for photolithography, pattern collapse may occur, and when it exceeds 5 parts by weight, it may act as an impurity.
  • the cleaning liquid composition according to the present invention may be used in a cleaning process of a conventional photolithography process, and may harden the surface of the photoresist pattern formed through a heating process after cleaning.
  • a photoresist pattern formed on a semiconductor substrate on which an etched layer is formed, and (b) exposing and developing the photoresist film to form a photoresist pattern.
  • hardening the photoresist surface by heating (hard bake) to 110 to 200 ° C, preferably 130 to 150 ° C.
  • the cleaning of the photoresist pattern may be by secondary cleaning by the cleaning liquid composition of the present invention after the first cleaning using pure water, the heating temperature during the heating (hard bake) process, If it is less than 110 ° C, the pattern may not be cured. If the heating temperature exceeds 200 ° C, the pattern may be collapsed by thermal decomposition of the resist itself.
  • the acidic monomolecular compound, the solvent, and the surfactant were mixed for 4 hours to completely dissolve the acidic monomolecular compound and the surfactant in the solvent, and then the water-soluble filter having pores of 0.1 ⁇ m size. It filtered through to prepare a cleaning liquid composition for photolithography.
  • a photosensitive polymer was synthesized as follows. 11methyl g (0.5 mol) 2-methyl-2-adamantyl methacrylate, 3-hydroxy-1-adamantyl methacrylate (3-hydroxy-1-adamantyl methacrylate) 23.6 g (0.1 mol), 68.0 g (0.4 mol) 2-oxotetrahydrofuran-2-yl methacrylate and azobis (isobutyronitrile) (AIBN) 6.6 g was dissolved in 125 g of anhydrous tetrahydrofuran (THF), degassed using an ampoule by freezing method, and the reaction was then polymerized at 68 ° C.
  • THF anhydrous tetrahydrofuran
  • a photoacid generator 10 parts by weight of diphenyl paratoluenylsulfonium nona plate (TPS-NF), base stabilizer (100 parts by weight of the photosensitive polymer) quencher), 20 parts by weight of triethanolamine based on 100 parts by weight of the photoacid generator is added to propylene glycol monomethyl ether acetate (PGMEA) and stirred for at least 12 hours to completely dissolve, and then a nylon filter having pores having a size of 0.01 ⁇ m.
  • a photoresist composition was prepared by sequentially filtering through a polytetrafluoroethylene (PTFE) material filter.
  • PTFE polytetrafluoroethylene
  • This baked (heated) wafer was developed with a 2.38% by weight aqueous solution of tetramethylammonium hydroxide (TMAH) for 30 seconds, thereby (i) 1: 1 line and space (L / S) having a film thickness of 140 nm and a line width of 70 nm. (line / space) pattern (Comparative Examples 1 to 2) or (ii) 1: 1 line and space (L / S: line / space) pattern (Comparative Examples 3 to 4) having a film thickness of 60 nm and a line width of 30 nm. Formed.
  • TMAH tetramethylammonium hydroxide
  • the photoresist film thickness was measured using a KLA company's measurement equipment, Opti-2600, and using an electron microscope (Critical Dimension Scanning Electron Microscope: CD-SEM, device name: S9220, manufacturer: Hitachi), the pattern of the pattern formed Collapse line width (unit: nm) and line width roughness (LWR, unit: nm) were measured.
  • the criterion of the pattern collapse was calculated by measuring the point at which the end edge pattern of the L / S pattern falls.
  • the improvement (decrease) of the line width roughness (LWR) also means that the resist scum is also improved. do.
  • Tables 1 and 4 The results are shown in Tables 1 and 4 below.
  • the pattern collapse line width (unit: nm) and line width roughness (LWR, unit: nm) of the photoresist pattern formed by the same method as in (c) were shown in Tables 1 to 4 below, and Examples 1 to 12.
  • the relative etch rates were measured and shown in Table 1 below.
  • the relative etching rate is a value converted based on Comparative Example 1, the etching rate measurement conditions are BT (breakthrough): CF 4 (10 sec), ME (main etch): Cl 2 / HBr / O 2 (30 sec ).
  • the monomer of the m repeating unit ( (m-1), (m-2), (m-3), (m-4)) and monomers of n repeat units ( (n-1), (n-2)) was dissolved in methanol, a reaction solvent, and then, in a nitrogen gas atmosphere, 20 parts by weight of the initiator (product name: V-601, manufacturer: Wako Pure Chemical Inc. Japan) based on 100 parts by weight of the total monomers. ) was added and mixed and then polymerized at 70 ° C. for 12 hours. After the completion of the polymerization, the polymer solidified in the reaction solvent was separated and dried.
  • the initiator product name: V-601, manufacturer: Wako Pure Chemical Inc. Japan
  • the dried polymer was dissolved in pure water at 20% by weight, and then passed through an ion exchange resin to remove chlorine (Cl) ions.
  • sulfuric acid in an equivalent ratio (molar ratio) to n repeat units of the polymerized polymer was added and stirred for 12 hours to obtain a water-soluble polymer in the form of a salt.
  • Mw weight average molecular weight
  • PDI polydispersity index
  • the water-soluble polymer, the solvent and the surfactant are mixed for 4 hours, the water-soluble polymer and the surfactant is completely dissolved in the solvent, and then filtered by a water-soluble filter having a pore size of 0.1 ⁇ m A cleaning liquid composition for lithography was prepared.
  • a photosensitive polymer was synthesized as follows. 117.2 g (0.5 mol) 2-methyl-2-adamantyl methacrylate, 3-hydroxy-1-adamantyl methacrylate (3-hydroxy-1-adamantyl methacrylate) 23.6 g (0.1 mol), 68.0 g (0.4 mol) 2-oxotetrahydrofuran-2-yl methacrylate and azobis (isobutyronitrile) (AIBN) 6.6 g was dissolved in 125 g of anhydrous tetrahydrofuran (THF), degassed using ampoule by freezing method, and the reaction was then polymerized at 68 ° C.
  • THF anhydrous tetrahydrofuran
  • a photoacid generator 10 parts by weight of diphenyl paratoluenylsulfonium nona plate (TPS-NF), base stabilizer (100 parts by weight of the photosensitive polymer) quencher), 20 parts by weight of triethanolamine based on 100 parts by weight of the photoacid generator is added to propylene glycol monomethyl ether acetate (PGMEA) and stirred for at least 12 hours to completely dissolve, and then a nylon filter having pores having a size of 0.01 ⁇ m.
  • a photoresist composition was prepared by sequentially filtering through a polytetrafluoroethylene (PTFE) material filter.
  • PTFE polytetrafluoroethylene
  • This baked (heated) wafer was developed with a 2.38% by weight aqueous solution of tetramethylammonium hydroxide (TMAH) for 30 seconds, thereby (i) 1: 1 line and space (L / S) having a film thickness of 140 nm and a line width of 70 nm. (line / space) pattern (Comparative Examples 11 to 12) or (ii) 1: 1 line and space (L / S: line / space) pattern (Comparative Examples 13 to 14) having a film thickness of 60 nm and a line width of 30 nm. Formed.
  • TMAH tetramethylammonium hydroxide
  • the photoresist film thickness was measured using a KLA company's measurement equipment, Opti-2600, and using an electron microscope (Critical Dimension Scanning Electron Microscope: CD-SEM, device name: S9220, manufacturer: Hitachi), the pattern of the pattern formed Collapse line width (unit: nm) and line width roughness (LWR, unit: nm) were measured.
  • the criterion of the pattern collapse was calculated by measuring the point at which the end edge pattern of the L / S pattern falls.
  • the improvement (decrease) of the line width roughness (LWR) also means that the resist scum is also improved. do.
  • Tables 6 and 8 The results are shown in Tables 6 and 8 below.
  • the pattern collapse line width (unit: nm) and line width roughness (LWR, unit: nm) of the photoresist pattern formed by the same method as in (c) were shown in Tables 6 to 8 below, and Examples 51 to 62. , By measuring the relative etch rate is shown in Table 6.
  • the relative etching rate is a value converted based on Comparative Example 11, the etching rate measurement conditions are BT (breakthrough): CF 4 (10sec), ME (main etch): Cl 2 / HBr / O 2 (30sec) Proceeded.
  • the cleaning liquid composition of the present invention can prevent resist scum, pattern collapse, and the like, and improve pattern roughness, which is generated during the formation of a fine pattern
  • the cleaning liquid composition may be used to form a fine pattern using extreme ultraviolet lithography (EUVL) technology. It is useful and can improve the etching resistance through pattern surface hardening.
  • EUVL extreme ultraviolet lithography

Landscapes

  • Chemical & Material Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Detergent Compositions (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

L'invention concerne une composition de solution de nettoyage pour photolithographie, qui empêche l'affaissement des motifs et l'augmentation de la valeur numérique de la rugosité de largeur de trait (LWR) pouvant se produire pendant la formation d'un motif de résine photosensible, et durcit la surface du motif pour améliorer la résistance à la gravure. La composition de solution de nettoyage comprend : un polymère hydrosoluble renfermant un composé d'acide monomoléculaire exprimé dans la formule chimique 1 ou une unité de répétition exprimée dans la formule chimique 3 ; et un solvant.
PCT/KR2012/002392 2011-04-01 2012-03-30 Composition de solution de nettoyage pour photolithographie Ceased WO2012134226A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2011-0030055 2011-04-01
KR10-2011-0030053 2011-04-01
KR1020110030053A KR101861311B1 (ko) 2011-04-01 2011-04-01 포토리소그래피용 세정액 조성물
KR1020110030055A KR101861310B1 (ko) 2011-04-01 2011-04-01 포토리소그래피용 세정액 조성물

Publications (2)

Publication Number Publication Date
WO2012134226A2 true WO2012134226A2 (fr) 2012-10-04
WO2012134226A3 WO2012134226A3 (fr) 2013-01-10

Family

ID=46932168

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/002392 Ceased WO2012134226A2 (fr) 2011-04-01 2012-03-30 Composition de solution de nettoyage pour photolithographie

Country Status (1)

Country Link
WO (1) WO2012134226A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160150322A (ko) * 2015-06-22 2016-12-30 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
WO2017009068A1 (fr) 2015-07-16 2017-01-19 Basf Se Solution de rinçage de réduction des défauts contenant des sels d'ammonium de sulfoesters

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5977041A (en) * 1997-09-23 1999-11-02 Olin Microelectronic Chemicals Aqueous rinsing composition
JP5002399B2 (ja) * 2007-09-28 2012-08-15 富士フイルム株式会社 平版印刷版原版の処理方法
JP5422146B2 (ja) * 2008-03-25 2014-02-19 富士フイルム株式会社 平版印刷版作成用処理液および平版印刷版原版の処理方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160150322A (ko) * 2015-06-22 2016-12-30 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
KR102397091B1 (ko) 2015-06-22 2022-05-12 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
WO2017009068A1 (fr) 2015-07-16 2017-01-19 Basf Se Solution de rinçage de réduction des défauts contenant des sels d'ammonium de sulfoesters
US10538724B2 (en) 2015-07-16 2020-01-21 Bafs Se Defect reduction rinse solution containing ammonium salts of sulfoesters

Also Published As

Publication number Publication date
WO2012134226A3 (fr) 2013-01-10

Similar Documents

Publication Publication Date Title
WO2014163332A1 (fr) Composition de revêtement pour former un micromotif, et procédé pour former un micromotif au moyen de celle-ci
KR100843804B1 (ko) 플루오로술폰아미드-함유 중합체를 갖는 네가티브 레지스트조성물
WO2018199419A1 (fr) Composition de sous-couche de réserve et procédé de formation de motifs à l'aide de ladite composition de sous-couche de réserve
WO2013100365A1 (fr) Monomère pour une composition de masque dur, composition de masque dur comprenant le monomère et procédé de formation de motif à l'aide de la composition de masque dur
WO2012064097A2 (fr) Composition pour couche de photoréserve pour lithographie dans l'extrême ultraviolet, et procédé de formation de motifs l'utilisant
WO2014157881A1 (fr) Composition de sous-couche de réserve et procédé pour la formation de motif l'utilisant
WO2011081285A2 (fr) Polymère contenant un cycle aromatique pour une sous-couche de réserve, et composé de sous-couche de réserve comprenant le polymère
WO2019245172A1 (fr) Composition de résine photosensible positive amplifiée chimiquement servant à améliorer un profil de motif
WO2014104480A1 (fr) Monomère, composition de masque dur comprenant ledit monomère, et procédé permettant de former un motif à l'aide de ladite composition de masque dur
WO2014042443A1 (fr) Composé et composition pour la formation de film inférieur de motif de réserve, et procédé de formation de film inférieur au moyen de ceux-ci
WO2012064074A1 (fr) Composition de résine photosensible, et film isolant diélectrique et dispositif électronique l'employant
WO2011031123A2 (fr) Compose isocyanurate pour former une couche antireflechissante organique et composition le comprenant
WO2022071774A1 (fr) Nouveau dérivé de sulfonate de naphtalimide, et générateur de photoacide et composition de résine photosensible qui les comprennent
WO2011008036A2 (fr) Polyimide photosensible et composition de résine photosensible la comprenant
WO2012134226A2 (fr) Composition de solution de nettoyage pour photolithographie
KR20230006678A (ko) 레지스트 상층막용 조성물 및 이를 이용한 패턴형성방법
KR20230005599A (ko) 포토레지스트 패턴 형성방법
KR20120111532A (ko) 포토리소그래피용 세정액 조성물
WO2023195636A1 (fr) Composition de masque dur en carbone déposé par rotation ayant des performances de planarisation élevées et procédé de formation de motifs l'utilisant
WO2012081865A2 (fr) Composition liquide de nettoyage pour la photolithographie
WO2012005418A1 (fr) Composé contenant un noyau aromatique pour une sous-couche de réserve, composition de sous-couche de réserve le contenant et procédé de formation de motif de dispositif au moyen de cette composition
WO2020204431A1 (fr) Composition pour sous-couche de réserve, et procédé de formation de motif l'utilisant
WO2010140870A2 (fr) Procédé permettant de former des motifs fins dans un dispositif à semi-conducteur
WO2014129701A1 (fr) Monomère, composition de masque dur comprenant un monomère, et procédé de formation de motif utilisant ladite composition de masque dur
KR101861310B1 (ko) 포토리소그래피용 세정액 조성물

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12763958

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12763958

Country of ref document: EP

Kind code of ref document: A2