WO2012138167A3 - Cellule solaire et son procédé de fabrication - Google Patents

Cellule solaire et son procédé de fabrication Download PDF

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Publication number
WO2012138167A3
WO2012138167A3 PCT/KR2012/002605 KR2012002605W WO2012138167A3 WO 2012138167 A3 WO2012138167 A3 WO 2012138167A3 KR 2012002605 W KR2012002605 W KR 2012002605W WO 2012138167 A3 WO2012138167 A3 WO 2012138167A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
fabricating
same
layer
light absorbing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/002605
Other languages
English (en)
Other versions
WO2012138167A2 (fr
Inventor
Seung Yup Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Priority to EP12768551.9A priority Critical patent/EP2695202A4/fr
Priority to CN201280028400.2A priority patent/CN103597613A/zh
Publication of WO2012138167A2 publication Critical patent/WO2012138167A2/fr
Publication of WO2012138167A3 publication Critical patent/WO2012138167A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

L'invention porte sur une cellule solaire et sur son procédé de fabrication. La cellule solaire comprend : un substrat ; une couche d'électrode arrière sur le substrat ; une couche d'absorption de la lumière sur la couche d'électrode arrière ; une couche tampon sur la couche d'absorption de la lumière ; et une couche de fenêtre sur la couche tampon, la couche d'absorption de la lumière comprenant une pluralité de vides.
PCT/KR2012/002605 2011-04-08 2012-04-05 Cellule solaire et son procédé de fabrication Ceased WO2012138167A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP12768551.9A EP2695202A4 (fr) 2011-04-08 2012-04-05 Cellule solaire et son procédé de fabrication
CN201280028400.2A CN103597613A (zh) 2011-04-08 2012-04-05 太阳能电池及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110032959A KR101220060B1 (ko) 2011-04-08 2011-04-08 태양전지 및 이의 제조방법
KR10-2011-0032959 2011-04-08

Publications (2)

Publication Number Publication Date
WO2012138167A2 WO2012138167A2 (fr) 2012-10-11
WO2012138167A3 true WO2012138167A3 (fr) 2013-01-10

Family

ID=46969702

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/002605 Ceased WO2012138167A2 (fr) 2011-04-08 2012-04-05 Cellule solaire et son procédé de fabrication

Country Status (4)

Country Link
EP (1) EP2695202A4 (fr)
KR (1) KR101220060B1 (fr)
CN (1) CN103597613A (fr)
WO (1) WO2012138167A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016017617A1 (fr) * 2014-07-29 2016-02-04 京セラ株式会社 Dispositif de conversion photoélectrique, dispositif de conversion photoélectrique en tandem et réseau de dispositifs de conversion photoélectrique
JP6864642B2 (ja) * 2018-03-22 2021-04-28 株式会社東芝 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006216958A (ja) * 2005-02-04 2006-08-17 Aisin Seiki Co Ltd 新規の吸収体または半導体材料を含む貫入形態のソリッドステート光電池デバイス
JP2008047614A (ja) * 2006-08-11 2008-02-28 Showa Shell Sekiyu Kk 吸着材を利用した改良型太陽電池モジュール
KR20100074223A (ko) * 2007-09-24 2010-07-01 퀄컴 엠이엠스 테크놀로지스, 인크. 간섭계 광기전력 전지

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6946597B2 (en) 2002-06-22 2005-09-20 Nanosular, Inc. Photovoltaic devices fabricated by growth from porous template
US7700464B2 (en) * 2004-02-19 2010-04-20 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from nanoflake particles
KR20070044982A (ko) * 2005-10-26 2007-05-02 삼성전자주식회사 이차전지 기능 복합형 전기변색 소자 및 그 제조방법
JP5052697B2 (ja) * 2009-09-29 2012-10-17 京セラ株式会社 光電変換装置
JP4937379B2 (ja) * 2010-06-11 2012-05-23 昭和シェル石油株式会社 薄膜太陽電池
US20130125982A1 (en) * 2010-07-29 2013-05-23 Kyocera Corporation Photoelectric conversion device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006216958A (ja) * 2005-02-04 2006-08-17 Aisin Seiki Co Ltd 新規の吸収体または半導体材料を含む貫入形態のソリッドステート光電池デバイス
JP2008047614A (ja) * 2006-08-11 2008-02-28 Showa Shell Sekiyu Kk 吸着材を利用した改良型太陽電池モジュール
KR20100074223A (ko) * 2007-09-24 2010-07-01 퀄컴 엠이엠스 테크놀로지스, 인크. 간섭계 광기전력 전지

Also Published As

Publication number Publication date
CN103597613A (zh) 2014-02-19
WO2012138167A2 (fr) 2012-10-11
EP2695202A4 (fr) 2014-10-29
EP2695202A2 (fr) 2014-02-12
KR101220060B1 (ko) 2013-01-21
KR20120115036A (ko) 2012-10-17

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