WO2012139882A1 - Dispositif électroluminescent - Google Patents

Dispositif électroluminescent Download PDF

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Publication number
WO2012139882A1
WO2012139882A1 PCT/EP2012/055430 EP2012055430W WO2012139882A1 WO 2012139882 A1 WO2012139882 A1 WO 2012139882A1 EP 2012055430 W EP2012055430 W EP 2012055430W WO 2012139882 A1 WO2012139882 A1 WO 2012139882A1
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
light
emitting device
optoelectronic component
electromagnetic radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2012/055430
Other languages
German (de)
English (en)
Inventor
Wolfgang Mönch
Stefan Illek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of WO2012139882A1 publication Critical patent/WO2012139882A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
    • G02B5/0236—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element
    • G02B5/0242—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element by means of dispersed particles
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V14/00—Controlling the distribution of the light emitted by adjustment of elements
    • F21V14/003—Controlling the distribution of the light emitted by adjustment of elements by interposition of elements with electrically controlled variable light transmissivity, e.g. liquid crystal elements or electrochromic devices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/02—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0273—Diffusing elements; Afocal elements characterized by the use
    • G02B5/0278—Diffusing elements; Afocal elements characterized by the use used in transmission
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses

Definitions

  • a light-emitting device is specified.
  • An object to be achieved is to provide a light-emitting device which is simple and compact in construction.
  • the latter comprises at least one optoelectronic component for generating electromagnetic radiation.
  • the optoelectronic device is a light emitting diode.
  • the light emitting diode is then formed with a semiconductor body.
  • the semiconductor body comprises at least one active zone, which emits electromagnetic radiation under external electrical contacting.
  • the optoelectronic ⁇ specific component emits electromagnetic radiation in the range of ult ⁇ raviolettem to infrared light, in particular visible light.
  • the latter comprises at least one means for setting a radiation characteristic of the electromagnetic radiation emitted by the optoelectronic component.
  • emission characteristic describes an angle dependence of the light intensity of the electromagnetic radiation emitted by the optoelectronic component with respect to a main emission direction of the optoelectronic component.
  • Adjustment can in this context be a predefinable deformation and / or influencing of the optoelectronic see component emitted and incident on the means and / or passing through this electromagnetic radiation. It is possible that the means for adjusting a radiation characteristic is formed from a single component. In addition, it is also possible for the means for setting a radiation characteristic to consist of a plurality of components, each of which is capable of setting the emission characteristic individually.
  • the animal lichtemit ⁇ device comprises at least a driving device for operating the agent.
  • "Operate" in this context means that the means with electrical current, impressed by electrostatic charge in the means or in individual components of the means and / or application of electrical voltage to the means can be assigned prescribable by the driving device, so that the means the Abstrahl characterizing the emitted from the optoelectronic component electromagnetic radiation can adjust.
  • the means is arranged downstream of the optoelectronic component in a main emission direction.
  • “subordinate” means that the emitted electromagnetic radiation strikes and / or passes through the medium in chronological sequence in the main emission direction after the emission of electromagnetic radiation by the optoelectronic component.
  • a large part of the electromagnetic radiation emitted by the optoelectronic component strikes the means.
  • Majority in this context means that at least 80%, preferably more than 90%, of the electronic components emitted by the optoelectronic component magnetic radiation hits the agent. This provides si ⁇ cher, that the largest possible proportion of the light emitted from the optoe ⁇ lektronischen component electromagnetic radiation can be adjusted by the means.
  • the device can be operated in at least two operating modes.
  • the means can be preset from the outside, by the drive device, in each operating mode, for example, with regard to the operating parameters excitation height, operating current, operating voltage, operating time, operating temperature and / or embossing level of electrical charges in the means.
  • the individual operating modes differ from each other in at least one of the mentioned operating parameters.
  • the drive device serves to select between the operating modes, wherein different operating modes are assigned to different emission characteristics.
  • "Different" in this context means that the exhaust jet characteristics and / or modes of operation are not iden ⁇ table.
  • each operating mode is unambiguously, for example one-to-one, assigned to a radiation characteristic.
  • a predetermined period of operation that is a predetermined period of operation mode
  • the individual operating modes at a predetermined point in time can switch for example, by analog conversion or transition in response to a predetermined time interval, for example continuously or stepwise, inein ⁇ other. It is conceivable that the means in two, three, four or more operating modes is operable.
  • the drive device can select between the individual operating modes and operate the means as a function of the operating mode.
  • the latter comprises at least one optoelectronic component for generating electromagnetic radiation. Furthermore, the light-emitting device comprises at least one means for adjusting a radiation characteristic of the electromagnetic radiation emitted by the optoelectronic component. In addition, the light-emitting device comprises at least one drive device for operating the means, wherein a large part of the electromagnetic radiation emitted by the optoelectronic component strikes the means.
  • the means is operable in at least two modes of operation, the drive means serving to select between the modes of operation, and wherein the respective emission characteristic produced by the means is different in each of the modes of operation.
  • the light emitting device described herein is based, inter alia, on the insight that an adjustment and / or modulation of electromagnetic radiation ⁇ tables, for example, a light emitting diode, generated from an optoelectronic device, is possible only with great effort.
  • a radiation characteristic can be set by a sometimes complex downstream connection of an optical system behind a light emitting diode and / or LED area light source.
  • the erzeug ⁇ te radiation through the optical system can be determined by a design and composition, for example in terms of the geometry and optical ⁇ rule properties of the optical system. That is, in such downstream optics, the Abstrahl characterizing not or individually adjusted to the required needs only in a very limited ⁇ extent.
  • the emission characteristic can be realized by means of several downstream different optics. For example, certain LEDs could then each be assigned to an optical system. However, this requires a large number of different light-emitting diodes and / or different optical systems. In particular, this can lead to a light-emitting device which is complex in construction and expensive to manufacture.
  • ⁇ ne light emitting device makes inter alia on the idea of use, at least one optoelectronic component to Erzeu ⁇ gen electromagnetic radiation, and at least one means for adjusting a radiation characteristic of the of to provide the optoelectronic component emitted electromagnetic radiation.
  • the drive ⁇ device controls the means by which in each case the predetermined and desired emission of the light emitting device results in a function of said operating modes.
  • the predetermined and desired emission of the light emitting device results in a function of said operating modes.
  • the drive ⁇ device can be dispensed with a complex replacement and / or installation of a plurality of different optical systems for shaping the radiation characteristic.
  • This can lead to a light-emitting lead direction, which has a low height, that is, a small extent, for example, in the main emission direction of the optoelectronic device.
  • a light-emitting device be ⁇ Sonder is space-saving and compact.
  • the means comprises at least two ⁇ Strahlungsumlenkiana, which are arranged on a Monta ⁇ geology a wearer.
  • the Strahlungsumlenk ⁇ elements can be mechanically firmly connected to the carrier.
  • the radiation deflecting elements are each formed with a deflecting carrier, on whose outer surfaces at least in places at least one radiation-reflecting or radiation-scattering layer is applied.
  • the outer surfaces may comprise the entire surface area of the deflection beams.
  • the radiation deflection elements reflect or scatter electromagnetic radiation emitted by the optoelectronic component in at least one of the operating modes. For example, reflect or scatter the Strahlungsumlenkiana emitted from the electro-opto component ⁇ African electromagnetic radiation in the direction away from the optoelectronic component.
  • the remote to the optoelectronic device on a mounting surface of the carrier link ⁇ surface is arranged.
  • "Radiation-transmissive" means in the context ⁇ sem that the support for the optoelectronic component of the electromagnetic radiation emitted at ⁇ least 80%, preferably more than 90% transmissive.
  • electromagnetic radiation emitted by the optoelectronic component is guided through the carrier in the direction of the deflecting elements.
  • the radiation deflection elements are arranged essentially parallel to one main emission direction of the optoelectronic component in the operating mode.
  • “Substantially” in this context means that the Strahlungsumlenkiata, up to, arranged with a Be ⁇ operating tolerance associated angular deviations parallel to the main radiation direction and aligned. The angular deviations are then at most 5 °, preferably at most 3 ° from the main emission direction.
  • the means is switched by the Ansteu ⁇ ervoriques in the forward direction, in which no or substantially no radiation emitted by the optoelectronic component is re ⁇ flexed by the Strahlungsumlenketti or scattered.
  • the radiation deflecting elements are arranged in at least the further operating mode in a predeterminable to the main radiation angle a, wherein the angle a at least 5 ° and at most 90 ° be ⁇ contributes, wherein the drive device is provided for adjusting the angle a.
  • the An Tavernvor ⁇ direction controls the Strahlungsumlenkiano individually, that is un ⁇ dependent on each other, or collectively, that is, together, on. Controls the drive apparatus the Strahlungsumlenkele ⁇ ment individually that each Strahlungsumlenkele ⁇ ment a predefinable angle and / or angular range is conceivable clearly, for example, is uniquely associated.
  • each of the radiation deflection elements is then arranged at different angles a.
  • each of the radiation deflecting elements can assume its own angle a.
  • the radiation deflecting elements of the means are predeterminably scattering or reflecting the electromagnetic radiation emitted by the optoelectronic component.
  • the radiation deflecting elements then scatter or reflect the electromagnetic radiation, for example in the direction away from the carrier.
  • the greater the angle a that is to say the stronger the radiation deflection elements deviate from the transmission direction, the greater the proportion of the scattered or reflected electromagnetic radiation to the electromagnetic radiation emitted primarily by the optoelectronic component.
  • the scattering or reflection effect of the agent may increase with increasing angle ⁇ .
  • the angle a is in the further operating mode, exactly 90 °, the light emitted from the optoe ⁇ lektronischen component electromagnetic radiation is diffusely scattered by the agent.
  • the means is switched in the reverse direction by means of the control device.
  • the scattering effect of the radiation deflecting elements may be highest.
  • "Diffuse scattering" in this context means Strahlungsumlenketti that the radiation emitted by the optoelectronic component and ⁇ rule independent of the direction of impinging electromag netic radiation ⁇ , that is, in all directions, scatter.
  • the Umlenk varieties the Strahlungsumlenkiano to themselves are formed at least in places permeable to radiation so that light emitted from the optoe ⁇ lektronischen component electromagnetic radiation at least partially through the Umlenka pass therethrough and impinge on the radiation-reflecting or diffusely scattering layer can not back through the Umlenkraj for example, back into Direction of the optoelectronic device is reflected.
  • the rindemit- animal device comprises a light guide having a radiation and a radiation decoupling ge ⁇ genübereaude support surface, wherein light emitted from the optoe ⁇ lektronischen component electromagnetic radiation through side surfaces of the light guide in these is coupled.
  • the side surfaces extend transversely to the radiation outcoupling surface and / or to the support surface.
  • the side surfaces connect the radiation output surface and the support surface with each other.
  • the means is arranged on the bearing surface of the light guide.
  • the means is at least in places in direct contact with the support surface. It is also conceivable that one or more radiation-permeable layers are arranged between the means and the support surface of the light guide.
  • the means for coupled into the light guide is at least in the operating mode Radiation permeable to electromagnetic radiation, and at least in the further operating mode re fl ects or scatters electromagnetic radiation coupled into the optical waveguide in the direction of the radiation outcoupling surface.
  • the means can be designed and operated as in at least one of the embodiments shown above.
  • the means of a chamber formed to minimum with to ⁇ , in a diffusely scattering material is in at least the wide ⁇ ren mode of operation of the means at least, said filters the chamber at least as ⁇ enclosed by a light guide of the light emitting device is.
  • the chamber is partially or completely filled with one or more diffusely scattering materials up to a predetermined level.
  • the chamber of the means is integrated into the light guide in ⁇ . This means that the chamber is surrounded on all sides by the light ⁇ conductor. In this case, as large as possible of the light scattered back from the diffuse scattering material into the optical waveguide can be coupled back into the optical waveguide and propagated within the optical waveguide.
  • the means is guide shape emitted at ⁇ least in the operating mode of the optoelectronic device and coupled into the light guide electromagnetic radiation ⁇ diagram radiation-permeable.
  • the chamber may be filled with a lower degree of filling than in the further operating mode with the diffusely scattering material.
  • no diffusely scattering material is left in the chamber in the operating mode.
  • the chamber is then emptied of the diffusely scattering material.
  • the electromagnetic radiation emitted by the optoelectronic component can enter the chamber, through They pass undisturbed through and couple again in the light guide. This means that with an empty chamber, the electromagnetic radiation is not scattered diffusely.
  • the means is therefore connected in the operating mode in the forward direction.
  • At least one of shape will guide at least partially ⁇ scattered electromagnetic radiation at least in the white ⁇ direct operation mode from the diffusely scattering material back into the light guide. That is, the agent in the white ⁇ direct mode of operation can be connected in the reverse direction.
  • the Re ⁇ servoir is disposed outside of the light guide or outside of a light conductive region of the light guide.
  • the reservoir is completely filled with the diffusely scattering material.
  • the means is then switched in the forward direction. Electro ⁇ magnetic radiation is not scattered in this case by the tel ⁇ tel and / or reflected.
  • the diffusely scattering material is conducted from the reservoir into the chamber by applying an external voltage through the drive device and is held there by maintaining the voltage.
  • electrostatic Po ⁇ potentials are in the further operating mode by applying an electric field to the medium and / or on the diffusely scattering material in the composition produced and / or stamped into the central electrical charges.
  • the diffusely scattering material can, for example be pulled by the electrostatic potentials from the reservoir into the chamber, for example. Therefore, in another mode of operation the reservoir is at least partially emptied ent ⁇ and the means connected in the reverse direction.
  • the diffusing material passes after switching off the external voltage by the control device, the diffusing material without expending external ⁇ me chanical and / or electrostatic forces in the reservoir back.
  • the diffusely scattering material returns to the reservoir by means of capillary forces forming or occurring within the means.
  • the diffusely scattering material can also be returned to the reservoir by the application of external mechanical and / or electrostatic forces.
  • a reverse voltage can be applied to the means by means of which the diffusely scattering material is led out of the chamber back into the reservoir.
  • the return of the diffusely scattering material into the reservoir can be done in the same way as the introduction of the diffusely scattering material from the reservoir into the chamber.
  • Formed scattering particles which are introduced ⁇ in a matrix material ⁇ , wherein the scattering particles have a d5 Q value, measured in Qg, of at most 30 ⁇ . It is If the term “D5O” to a median diameter of the scattering particles and the term “Qo" aracei ⁇ lung sum of the scattering particles. Both terms are defined by ISO 9276-2 "Representation of results of particle-size analysis - part 2: calculation of average particle
  • the matrix material may be water, a low-viscosity oil, a silicone or another plastic. which are selected according to the required needs.
  • At least one disclosed are dimensionally in operation mode at a predetermined temperature of the radiation-scattering layer and / or the diffusely scattering material, a Bre ⁇ deviation index of the scattering particles and a refractive index of Materixmaterials emitted in a predeterminable by the optoe ⁇ lektronischen component wavelength and / or emit - Wavelength range of the electromagnetic radiation, the same or substantially the same.
  • "Substantially” in this context means that the two refractive indices and n j [ for the same wavelength or in the same wavelength range deviate from one another by less than 10%, preferably by less than 5%. For example, such allow
  • the light-emitting device can be operated in the operating mode. For example, the electromagnetic radiation is then not scattered by the diffusely scattering material arranged in the chamber. The light-emitting device may then be connected in the passage direction.
  • the means has a central region and an outer region, which encloses the central region in a direction perpendicular to a main radiation direction of the optoelectronic component at least in places.
  • the outer area completely encloses the central area in the direction perpendicular to the main emission direction of the optoelectronic component.
  • the outdoor area completely surrounds the central area.
  • the central region overlaps at least in places with the optoelectronic component in the main emission direction.
  • the optoelectronic component is partially or completely covered by the central region and / or covered.
  • the central region is in accordance with at least one disclosed embodiment, radiation-permeable at least in the loading ⁇ operating mode and the outdoor area for absorbing radiation from the electro-opto component ⁇ African emitted electromagnetic radiation.
  • the outer region may act as an optical stop for electromagnetic radiation emitted by the optoelectronic component.
  • the central region is radiation-absorbing at least in the wide operating mode, and the outer region is radiation-permeable to electromagnetic radiation emitted by the optoelectronic component.
  • the central area now fulfills the diaphragm function for the electromagnetic radiation emitted by the optoelectronic component. For example, only from the radiation-transmissive regions of the agent from the means e- lektromagnetician radiation emerge again.
  • the means is arranged downstream of the means in a main emission direction of the optoelectronic component at least one imaging arrangement.
  • the imaging arrangement can be arranged at a distance from the means or be in direct contact with the means.
  • the Abbil ⁇ dung arrangement provides an additional individual and adapted to the respective user adjustment of the emission characteristic of the light emitting device.
  • mapping assembly is formed with guide form at least a first region and at least egg ⁇ nem second region. Both regions, with electromagnetic radiation incident on the imaging device , have different optical properties. "Different" in this context means that the optical properties of the first and second regions are not identical.
  • the optical properties are focusing or scattering. It is likewise conceivable that at least one of the regions of the imaging arrangement is At least in places, additionally or alternatively, it is designed to be radiation-absorbing.
  • the first region incident electromagnetic radiation and the second region scatters incident electromagnetic Strah ⁇ lung, wherein the first region from the second region in a direction at least in places enclosed perpendicular to the main emission direction of the optoelectronic component and in the main emission direction at least partially overlapped with the optoelectronic device.
  • the first region is completely enclosed by the second region in the direction perpendicular to the main emission direction of the light-emitting diode.
  • the second area completely borders the first area.
  • the light-emitting device described herein may be used as a room lamp, effect lighting and / or as a lithographic apparatus.
  • FIGS. 1A to 7B show schematic side views of individual embodiments of the light-emitting device described here.
  • the light-emitting device 100 has at least one optoelectronic component 1 for generating electromagnetic radiation, wherein in the present case the optoelectronic component 1 is a light-emitting diode.
  • the light-emitting device may have two, three, four or more optoelectronic components 1.
  • the light-emitting device 100 comprises at least one means 2 for setting a Abstrahlcha ⁇ characteristic 80 of the emitted from the optoelectronic component 1 electromagnetic radiation.
  • the light-emitting device 100 comprises a drive device 3 for operating the means 2, wherein a majority of the electromagnetic radiation emitted by the optoelectronic component 1 strikes the means 2 and the means 2, in the embodiment of FIG. 1A, into two operating modes Bl and B2 is operable.
  • the means 2 is arranged downstream of the optoelectronic component 1 in a main emission direction Hl.
  • the drive device 3 is used to select between the two operating modes Bl and B2, wherein each of the operating modes Bl and B2 are assigned different emission characteristics 80.
  • the means 2 comprises at least two Strahlungsumlenk sculpture 21 which are arranged on a Mon ⁇ days surface 222 of a radiation-transmissive support 22, connecting the opto-electronic component 1 facing away from one of the mounting surface 222 of the carrier 22 surface 221 is arranged.
  • light emitted by the optoelectronic component 1 ⁇ rule electromagnetic radiation through the carrier 22 into the direction of the Strahlungsumlenk sculpture is guided 21st
  • the radiation deflecting elements 21 are each formed with a deflecting support 211, on whose outer surfaces 211A at least in places at least one radiation-scattering layer 211B is applied.
  • the radiation ⁇ deflection elements 21 are parallel to the direction Hauptabstrahl- Hl of the optoelectronic device 1 arranged in the illustrated in Figure 1A mode Bl substantially.
  • the means 2 in the first operating mode Bl is radiation-transmissive to electromagnetic radiation emitted by the optoelectronic component 1.
  • the means 2 is therefore switched in the first operating mode Bl in the forward direction. Therefore, the emission characteristic 80 of the light-emitting device 100 is essentially determined by the emission characteristic of the optoelectronic component 1.
  • the light-emitting device described in Figure 1A is 100 MU in the further operating mode B2 shows ⁇ .
  • the radiation ⁇ deflecting elements 21 are arranged at an angle of exactly 90 ° to the main ⁇ radiation direction Hl.
  • a change in the angle, which is 0 ° in FIG. 1A, to the angle of 90 ° of FIG. 1B is realized by driving the radiation deflecting elements 21 by the driving device 3.
  • the Strahlungsumlenkiana 21 may ert example, collectively or individually by means of the driving angesteu- ⁇ device 3 and are thereby actuated for example electrostatically.
  • the radiation deflection elements 21 can be opened by means of the electrostatic charges introduced into the means 2, for example is parallel to the main emission direction Hl, or be closed, that is at an angle of 90 ° to
  • the radiation deflecting elements have a surface area of (100 ⁇ ) 2 .
  • FIGS. 2A to 2C A further exemplary embodiment of a light-emitting device 100 described here is described in schematic side views in FIGS. 2A to 2C.
  • FIG. 2A shows how electromagnetic radiation emitted by the optoelectronic component 1 is coupled in via side surfaces 51 of a light guide 5.
  • the light guide 5 has a radiation 52 and the radiation a 52 waivelie ⁇ constricting support surface 53rd
  • the means 2 is arranged on the support surface 53 of the light guide 5 and is in direct contact with this.
  • the means 2 is connected in the operating mode Bl, that is to say in the forward direction, in FIG. 2A.
  • This means that the means 2 is radiation-transmissive for electromagnetic radiation coupled into the light conductor 5 and also for ambient light 91 impinging on the light guide 5 and on the means 2. That is, in the first operating mode Bl, the ambient light 91 can pass through the means 2, without being reflected or backscattered by the means 2 in the direction of the radiation outcoupling surface 52 of the light guide 5.
  • FIG. 2B shows the light emitting device 100 described in the figure 2A, in turn, in the operating mode of the agent Bl 1.
  • Figure 2A is now a possible optical path within the light guide 5 of the light emitted from the optoe ⁇ lektronischen electromagnetic component 1 Radiation shown.
  • the electromagnetic radiation emitted by the optoelectronic component 1 occurs after the impact on the means 2 through this at least partially.
  • Another part of the electromagnetic radiation is reflected, for example, by total reflection at the contact surface 53 of the optical fiber 5 back towards the Strahlungsaus ⁇ coupling surface 52 or diffused and coupled out via the Strah ⁇ lungsauskoppel constitutional 52 from the light guide.
  • FIG. 2C shows the light-emitting device 100 described in FIGS.
  • the means 2 is connected in the blocking ⁇ direction. This means that in the further operating mode B2 Be ⁇ coupled into the optical fiber 5 and incident on the device 2, electromagnetic radiation is re ⁇ flexed or by the means 2 in the direction of the radiation 52 is scattered.
  • the imaging and / or reflection properties of the light-emitting device vary depending on the choice of the operation mode, a certain proportion of the radiation emitted by the optoelectronic component 1 electromagnetic radiation can be predetermined in the direction of the radiation are reflected 52 or ⁇ ge scatters. In this respect, the emission characteristic 80 can be adjusted easily and inexpensively.
  • FIGS. 3A to 3B show, in schematic side views, a further exemplary embodiment of a light-emitting device 100 described here.
  • FIG. 3A shows, in a schematic side view, how the plurality of optoelectronic components 1 are arranged next to one another on a common holding carrier 4 in the lateral direction L.
  • the holding carrier 4 comprises electrical contact points and electrical conductor tracks for electrical contacting of the optoelectronic components 1.
  • the means 2 is formed with a plurality of chambers 25 arranged side by side in the lateral direction L. In the present case, the chambers 25 are completely enclosed by the light guide 5 'of the light-emitting device 100 and integrated therein.
  • each chamber 25 is associated with an optoelectronic component 1 and arranged in the direction opposite to the main emission Hl below its associated chamber 25.
  • the chambers 25 and their associated optoelectronic components 1 overlap in the main emission direction H1.
  • the light emitting device 100 in FIG. 3A is in the further operating mode B2, the chambers 25 in the present case being completely filled with a diffusely scattering material 23 are. Emitted by the optoelectronic components 1 electromagnetic radiation 'are respectively returned to the chambers 25 and diffuse through the arranged in the chambers 25 diffusely scattering Ma ⁇ TERIAL 23, that is sideways, into the light guide 5', therefore, via the optical fiber 5 scattered. The diffuse scattering back into the
  • Light guide 5 ' can lead to the most homogeneous possible illumination of the light guide 5'.
  • the light-emitting device 100 shown in FIG. 3A is operated in the operating mode Bl, that is to say in the forward direction.
  • the dif ⁇ fus scattering material 23 is formed with scattering particles that are incorporated into a matrix material. Both the scattering particles and the matrix material have a certain cash vorgeb ⁇ refractive index. In particular, both the Bre ⁇ deviation index of the particles and the refractive index of the mat rix ⁇ temperature and / or wavelength-dependent may be.
  • the matrix material may be liquid or solid.
  • the matrix material is water, a low-viscosity oil, a silicone or another plastic.
  • FIG 3B there is shown, as in a vorgeb ⁇ cash temperature T, which can be set by means of the driving device 3, a refractive index of the diffusion particles and a refractive index n ⁇ of the matrix material at a predetermined emitted by the optoelectronic component 1 wavelength and / or Wavelength range of the electromagnetic radiation are equal.
  • This wavelength or this wavelength range of the electromagnetic radiation is not scattered by the diffusely scattering material 23.
  • Electr ⁇ romagnetician radiation of this wavelength can therefore pass through the chambers 25 of the means 2 and by the diffusely scattering material 23 itself, for example unscattered through it.
  • the stray own sheep ⁇ th of the material 23 may be predetermined targeted and set ⁇ the function of the temperature T of the diffusing material 23rd
  • the means 2 shown in connection with FIGS. 3A and 3B may be suitable for the spectral control of the emission characteristic 80 of the light-emitting device 100.
  • a temperature control ⁇ by means of a Peltier element or by means zusharm ⁇ Licher infrared light emitting diodes may be implemented.
  • the drive device 3 may in this case comprise the Peltier element and / or the infrared LEDs.
  • FIGS. 4A and 4B show, in schematic side views, a further exemplary embodiment of a light-emitting device 100 described here. In FIG.
  • the light-emitting device 100 is operated in the operating mode B1, that is to say in the forward direction.
  • the diffusely scattering Materi ⁇ al 23 is arranged 25 associated with reservoir 24 in a respective one chamber.
  • the diffusely scattering material 23 may be formed with scattering particles which are incorporated in a material of matter.
  • the matrix mate rial ⁇ may be liquid, for example water or an oil to be.
  • the scattering particles can have a Q value d5, gemes ⁇ sen in Qg, ⁇ of at most 30, ⁇ for example 20, have.
  • FIG. 4A also shows that the chambers 25 are arranged in the main emission direction H 1 between electrical contacts 28 and 26 of the light-emitting device 100.
  • the electrical contacts 28 and 26 are preferably formed with a radiation-transmissive, electrically conductive material, for example a transparent and conductive oxide.
  • the electrical contacts 28 and 26 can be selectively controlled by means of the control device 3 and, for example, be acted upon by electrical voltage. In the operating mode Bl, no voltage is applied to the electrical contacts 28 and 26 by the driving device 3. In other words, there is no or substantially no diffusely scattering material 23 in the chambers 25.
  • Electromagnetic radiation emitted by the optoelectronic component 1 in the main emission direction H1 can therefore pass unhindered through the chambers 25 and the electrical contacts 28 and 26 out of the leak out light emitting device.
  • FIG. 4B shows the light-emitting device 100 in the operating mode B2. Is shown how the diffusely scattering material is drawn into the chambers 25 23 under application of ex ternal ⁇ voltage 27 by means of the drive device 3 to the electrical contacts 26 and 28th In this case, the chambers 25 are filled to a predefinable degree of filling with the diffusely scattering material 23. From the optoelectronic component 1 in the direction of the main radiation direction Hl emitted electromagnetic radiation will now ⁇ play diffusely scattered in the operation mode B2,.
  • the emission characteristic 80 is therefore predetermined in the operating mode B2 by the arrangement of the diffusely scattering material 23 in the chambers 25 and selectively adjusted.
  • the diffusely scattering material 23 After switching off the external voltage 27 by the driving device 3, the diffusely scattering material 23 returns to the reservoirs 24 without the application of external mechanical and electrostatic forces. In particular, this can be done by capillary forces within the means 2, which pull the diffusely scattering material 23 out of the chambers 25 ⁇ .
  • FIGS. 5A to 5C show, in schematic side views, a further exemplary embodiment of a light-emitting device 100 described here.
  • FIG. 5A shows an imaging arrangement 7, which is arranged downstream of the means 2 in the main emission direction Hl of the optoelectronic component 1.
  • the imaging assembly befin ⁇ det to 7 with the device 2 in direct contact.
  • the imaging assembly 7 is formed with a first region 71 and a second region 72, both Regions 71 and 72 have different optical properties at auftref ⁇ fender on the imaging assembly 7 fendering electromagnetic radiation.
  • the region 71 is an area with focusing properties and the area 72 is an area with scattering properties.
  • the first region 71 is completely enclosed by the second region 72 in the main emission direction H 1 in a direction perpendicular to the main emission direction H 1 of the optoelectronic component 1 and overlapped in the main emission direction H 1 with the optoelectronic component 1 in places.
  • the different optical properties of the imaging device 7 can be combined with the optical properties of the device 2 that can be predetermined and set by the drive device 3 and, for example, amplified. In this respect, a particularly flexible applicability of the light-emitting device 100 by means of the imaging arrangement 7 is ensured.
  • FIG. 5C The opposite case is shown in FIG. 5C.
  • the electromagnetic radiation emitted by the optoelectronic component 1 is selectively directed by the means 2 only to the first region 71, which has focusing properties in the present case.
  • FIGS. 6A and 6B show, in schematic side views, a further exemplary embodiment of a light-emitting device 100 described here.
  • the arrangement of Figure 7 of the drawings is not arranged 6A and 6B with the agent 2 in direct contact, son ⁇ countries spaced therefrom.
  • the means 2 for example, as described in connection with Figures 1A and 1B executed. That is to say, in the exemplary embodiment according to FIGS. 6A and 6B, the means 2 likewise has the radiation deflecting elements 21, which are controlled in a targeted manner for setting the emission characteristic 80 by means of the driving device 3.
  • the angle is less than 90 °.
  • FIGS. 7A and 7B show, in schematic side views, a further exemplary embodiment of a light-emitting device 100 described here.
  • the means 2 of FIGS. 7A and 7B has a central region 212 and an outer region 210 which completely completes the central region 212 in the direction perpendicular to the main emission direction Hl of the optoelectronic component 1 encloses.
  • the central area 212 overlaps in places in the main emission direction Hl with the light-emitting diode 1.
  • the central area 212 radiation-transmissive, wherein the outer region 210 is radiation-absorbing for light emitted by the light emitting diode 1 in the operating mode Be ⁇ Bl electromagnetic radiation.
  • the means 2 according to the exemplary embodiments of FIGS. 7A and 7B is a ring stop.
  • FIG. 7B shows the means 2 in the further operating mode B2.
  • the operation mode B2 of the central region 212 ⁇ is radiation-absorbing and the outer portion 211 is radiation-transmissive for light emitted by the optoelectronic component 1 electromagnetic radiation.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

L'invention concerne un dispositif électroluminescent (1000) comportant : - au moins un composant optoélectronique (1) servant à produire un rayonnement électromagnétique ; - au moins un moyen (2) servant à ajuster une caractéristique de rayonnement (80) du rayonnement électromagnétique émis par le composant électromagnétique (1) : - au moins un dispositif d'activation (3) servant à faire fonctionner ledit moyen (2). Une partie importante du rayonnement électromagnétique émis par le composant électromagnétique (1) atteint ledit moyen (2), ledit moyen (2) peut fonctionner dans au moins deux modes (B1, B2), le dispositif d'activation (3) sert à sélectionner l'un ou l'autre des modes de fonctionnement (B1, B2), et aux modes de fonctionnement différents (B1, B2) sont associées des caractéristiques de rayonnement différentes.
PCT/EP2012/055430 2011-04-14 2012-03-27 Dispositif électroluminescent Ceased WO2012139882A1 (fr)

Applications Claiming Priority (2)

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DE102011017098.7 2011-04-14
DE102011017098A DE102011017098A1 (de) 2011-04-14 2011-04-14 Lichtemittierende Vorrichtung

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WO2012139882A1 true WO2012139882A1 (fr) 2012-10-18

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Cited By (1)

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DE102013101532B4 (de) 2013-02-15 2017-12-28 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
US9159890B2 (en) 2013-02-15 2015-10-13 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component
DE102019121881A1 (de) * 2019-08-14 2021-02-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements

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WO2005121641A1 (fr) * 2004-06-11 2005-12-22 Koninklijke Philips Electronics N.V. Systeme d'eclairage
EP1904785A2 (fr) * 2005-07-08 2008-04-02 Koninklijke Philips Electronics N.V. Module d'eclairage pour la production de lumiere a motif de diffusion electriquement variable et son utilisation en tant qu'eclairage polyvalent
WO2009087583A1 (fr) * 2008-01-08 2009-07-16 Koninklijke Philips Electronics N.V. Dispositif de sortie lumineuse à réflecteur commutable
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US20230155085A1 (en) * 2020-04-08 2023-05-18 Ams-Osram International Gmbh Optoelectronic component and illumination device

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