WO2012148716A2 - Coefficients et fonctions variables pour commande de polissage - Google Patents

Coefficients et fonctions variables pour commande de polissage Download PDF

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Publication number
WO2012148716A2
WO2012148716A2 PCT/US2012/033677 US2012033677W WO2012148716A2 WO 2012148716 A2 WO2012148716 A2 WO 2012148716A2 US 2012033677 W US2012033677 W US 2012033677W WO 2012148716 A2 WO2012148716 A2 WO 2012148716A2
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WO
WIPO (PCT)
Prior art keywords
layer
spectrum
stack
substrate
different
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Ceased
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PCT/US2012/033677
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WO2012148716A3 (fr
Inventor
Jeffrey Drue David
Dominic J. Benvegnu
Xiaoyuan Hu
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Applied Materials Inc
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Applied Materials Inc
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Priority claimed from US13/096,777 external-priority patent/US20120278028A1/en
Priority claimed from US13/096,714 external-priority patent/US8942842B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to KR1020137031251A priority Critical patent/KR101981814B1/ko
Priority to JP2014508401A priority patent/JP6030636B2/ja
Publication of WO2012148716A2 publication Critical patent/WO2012148716A2/fr
Publication of WO2012148716A3 publication Critical patent/WO2012148716A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/27—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection ; circuits for computing concentration
    • G01N21/274—Calibration, base line adjustment, drift correction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

Definitions

  • the present disclosure relates to polishing control methods, e.g., during chemical mechanical polishing of substrates.
  • An integrated circuit is typically formed on a substrate by the sequential deposition of conductive, semiconductive, or insulative layers on a silicon wafer.
  • One fabrication step involves depositing a filler layer over a non-planar surface and planarizing the filler layer.
  • the filler layer is planarized until the top surface of a patterned layer is exposed.
  • a conductive filler layer for example, can be deposited on a patterned insulative layer to fill the trenches or holes in the insulative layer.
  • the portions of the conductive layer remaining between the raised pattern of the insulative layer form vias, plugs, and lines that provide conductive paths between thin film circuits on the substrate.
  • the filler layer is planarized until a predetermined thickness is left over the non planar surface.
  • planarization of the substrate surface is usually required for photolithography.
  • CMP Chemical mechanical polishing
  • This planarization method typically requires that the substrate be mounted on a carrier head.
  • the exposed surface of the substrate is typically placed against a rotating polishing pad.
  • the carrier head provides a controllable load on the substrate to push it against the polishing pad.
  • a polishing liquid such as a slurry with abrasive particles, is typically supplied to the surface of the polishing pad.
  • One problem in CMP is determining whether the polishing process is complete, i.e., whether a substrate layer has been planarized to a desired flatness or thickness, or when a desired amount of material has been removed. Variations in the initial thickness of the substrate layer, the slurry composition, the polishing pad condition, the relative speed between the polishing pad and the substrate, and the load on the substrate can cause variations in the material removal rate. These variations cause variations in the time needed to reach the polishing endpoint. Therefore, it may not be possible to determine the polishing endpoint merely as a function of polishing time.
  • a substrate is optically monitored in-situ during polishing, e.g., through a window in the polishing pad.
  • existing optical monitoring techniques may not satisfy increasing demands of semiconductor device manufacturers.
  • a spectrum measured in-situ e.g., during a polishing process of CMP
  • a library of reference spectra is compared to a library of reference spectra to find the best matching reference spectrum.
  • One technique to build a library of reference spectra is to calculate a reference spectrum based on a theory of the optical properties thin film stacks.
  • the layer stack that is illuminated on the substrate can vary from measurement to measurement.
  • some substrates e.g., substrates in a back-end-of-line process, can have very complex layer stacks, which can be computationally difficult or unreliable.
  • n and k values optical film properties respectively referring to refractive index and extinction coefficient
  • the reference spectra generated from the optical model may not be accurate.
  • a technique to counteract this problem is to generate reference spectra for a variety of n and k values.
  • dispersion of n and k in the visible spectrum can be modeled using Cauchy equations for many dielectric materials.
  • a baseline Cauchy model is established for at least one of the layers, and then the coefficients of the Cauchy model are varied through a user-defined margin in the calculating of a library of theoretical spectra.
  • a method of generating a library of reference spectra includes storing an optical model for a layer stack having at a plurality of layers, receiving user input identifying a set of one or more refractive index functions and a set of one or more extinction coefficient functions a first layer from the plurality of layers, wherein the set of one or more refractive index functions includes a plurality of different refractive index functions or the set of one or more extinction coefficient functions includes a plurality of different extinction coefficient functions, and for each combination of a refractive index function from the set of refractive index functions and an extinction coefficient function from the set of extinction coefficient functions, calculating a reference spectrum using the optical model based on the refractive index function, the extinction coefficient function and a first thickness of the first layer, to generate a plurality of reference spectra.
  • the set of one or more refractive index functions may include a plurality of different refractive index functions, e.g., 2 to 10 functions.
  • Receiving user input identifying the plurality of different refractive index functions may include receiving user input identifying a first plurality of different first values, e.g., 2 to 10 values, for a first coefficient of the refractive index function.
  • Receiving user input identifying the first plurality of different first values may include receiving a lower value, an upper value, and a value increment or a number of values.
  • Receiving user input identifying the plurality of different refractive index functions may include receiving user input identifying a second plurality of different second values for a second coefficient of the refractive index function.
  • An index function may be calculated for each combination of a first value from the first plurality of values and a second value from the second plurality of values to generate the plurality of different index functions.
  • Calculating the index function may include calculating
  • the set of one or more extinction coefficient functions may include a plurality of different extinction coefficient functions, e.g., 2 to 10 functions.
  • the set of one or more refractive index functions may include a plurality of different refractive index functions and the set of one or more extinction coefficient functions my include a plurality of different extinction coefficient functions.
  • User input may be received identifying a plurality of different thickness values for the first layer of the substrate, the plurality of different thickness values including the first thickness value.
  • a reference spectrum may be calculated using the optical model for each combination of a refractive index function from the set of refractive index functions, an extinction coefficient function from the set of extinction coefficient functions, and a thickness value from the plurality of different thickness values.
  • Calculating the reference spectrum using the optical model may include a transfer-matrix method.
  • the substrate may include a stack of P+l layers, with the stack including the first layer, and with layer 0 being a bottom layer and layer P being the outermost first layer.
  • Calculating the reference spectrum may include calculating a stack reflectance RSTAC as follows
  • Calculating the reference spectrum may include calculating a stack reflectance RSTAC
  • Calculating the reference spectrum comprises calculating a first spectrum RSTAC using the optical model and combining the first spectrum RSTACK with a second spectrum.
  • Calculating the reference spectrum RLIBRARY may include calculating
  • RSTACKI is the first spectrum
  • RSTACO is the second spectrum
  • RREFERENCE is a spectrum of a bottom layer of the first stack and the second stack
  • X is a value between 0 and 1.
  • the bottom layer may be silicon or metal.
  • the first layer may include silicon oxide, carbon- doped silicon oxide, silicon carbide, silicon nitride, carbon-doped silicon nitride, or polysilicon.
  • a method of generating a library of reference spectra includes storing an optical model for a layer stack having at a plurality of layers, receiving user input identifying a first plurality of different first values for a first coefficient of a refractive index function, calculating a refractive index function for each first value from the plurality of different values to generate a plurality refractive index functions, and for each refractive index function from the plurality of refractive index functions, calculating a reference spectrum using the optical model based on the refractive index function, an extinction coefficient function and a first thickness of the first layer, to generate a plurality of reference spectra.
  • a refractive index function may be calculated for each combination of a first value from the first plurality of different first values and a second value from second plurality of different second values.
  • Implementations may include one or more of the following features.
  • Calculating the index function may include calculating
  • ⁇ ( ⁇ ) is the index function
  • A is the first value
  • B is the second value
  • C is a third value
  • a library of reference spectra is generated according to the prior methods, a substrate is polished, a sequence of spectra of light is measured from the substrate during polishing, for each measured spectrum of the sequence of spectra, a best matching reference spectrum is found to generate a sequence of best matching reference spectra, and at least one of a polishing endpoint or an adjustment for a polishing rate is determined based on the sequence of best matching reference spectra.
  • a method of generating a library of reference spectra includes receiving a first spectrum representing a reflectance of a first stack of layers on a substrate, the first stack including a first dielectric layer, receiving a second spectrum representing a reflectance of a second stack layer on the substrate, the second stack including the first dielectric layer and a second dielectric layer that is not in the first stack, receiving user input identifying a plurality of different contribution percentages for at least one of the first stack or the second stack on the substrate, and for each contribution percentage from the plurality of different contribution percentages, calculating a reference spectrum from the first spectrum, the second spectrum and the contribution percentage.
  • Implementations may include one or more of the following features.
  • Calculating the reference spectrum RLIBRARY may include calculating
  • RSTAC I is the first spectrum
  • RSTAC is the second spectrum
  • RREFERENCE is a spectrum of a bottom layer of the first stack and the second stack
  • X is the percentage contribution for the first stack.
  • the bottom layer may be silicon or metal.
  • RSTAC I is the first spectrum
  • RSTAC is the second spectrum
  • RMETAL is the third spectrum
  • RREFERENCE is a spectrum of a bottom layer of the stack
  • X is the percentage contribution for the first stack
  • Y is the percentage contribution for the metal.
  • the bottom layer may be the metal of the metal layer.
  • the metal layer may be copper.
  • Receiving user input identifying a plurality of different metal contribution percentages for the metal layer may include receiving user input identifying a first plurality of different contribution percentages for the first stack and receiving user input identifying a second plurality of different contribution percentages for the second stack, and the plurality of different metal contribution percentages may be calculated from the first plurality of different contribution percentages and the first plurality of different contribution percentages.
  • the plurality of different contribution percentages may include 2 to 10 values.
  • the plurality of different metal contribution percentages may include 2 to 10 values.
  • Receiving user input identifying a plurality of different contribution percentages may include receiving a lower percentage, an upper percentage, and a percentage increment.
  • the first spectrum and the second spectrum may be calculated using an optical model of the first stack and an optical model of the second stack, respectively. Calculating the first spectrum comprises calculating a stack reflectance RSTACKI p ⁇ ⁇
  • Calculating the second spectrum may include calculating a stack reflectance
  • a method of generating a library of reference spectra includes receiving a first spectrum representing a reflectance of a first layer stack on a substrate, the first stack including a first layer, receiving a second spectrum representing a reflectance of a second layer stack on the substrate, the second layer stack including a second layer that is not in the first stack, receiving a third spectrum representing a reflectance of a third layer stack on the substrate, the third layer stack including a third layer that is not in the first stack and not in the second stack, receiving user input identifying a first plurality of different contribution percentages for first stack and a second plurality of different contribution percentages for the second stack, and for each first contribution percentage from the first plurality of different contribution percentages and each second contribution percentage from the second plurality of different contribution percentages, calculating a reference spectrum from the first spectrum, the second spectrum, the third spectrum, the first contribution percentage and the second contribution percentage.
  • the second stack may include the first layer.
  • the first stack may consist of the first layer, and the first layer may be a bottom layer of the second stack.
  • the third stack may include the first layer and the second layer, the first layer may be a bottom layer of the third stack, and the second layer may be between the first layer and the third layer.
  • a method of controlling polishing includes generating a library of reference spectra according to one of the prior methods, polishing a substrate, measuring a sequence of spectra of light from the substrate during polishing, for each measured spectrum of the sequence of spectra, finding a best matching reference spectrum to generate a sequence of best matching reference spectra, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the sequence of best matching reference spectra.
  • Certain implementations can include one or more of the following advantages.
  • a library of reference spectra that spans the likely range of variation in index of refraction or extinction coefficient of one or more layers on a substrate may be calculated quickly.
  • a library of reference spectra that spans the likely range of variation in contribution by different layer stacks on a substrate may be calculated quickly.
  • the resulting library of reference spectra may improve reliability of the matching algorithm when there is lot-to-lot or manufacturer-to-manufacturer variation in the index of refraction or extinction coefficient.
  • reliability of the endpoint system to detect a desired polishing endpoint may be improved, and within-wafer and wafer-to-wafer thickness non-uniformity (WIW U and WTW U) may be reduced.
  • FIG. 1A-1C are schematic cross-sectional views of a substrate before, during and after polishing.
  • FIG. 2 illustrates a schematic cross-sectional view of an example of a polishing apparatus.
  • FIG. 3 illustrates a schematic top view of a substrate having multiple zones.
  • FIG. 4 illustrates a top view of a polishing pad and shows locations where in- situ measurements are taken on a substrate.
  • FIG. 5 illustrates a measured spectrum from the in-situ optical monitoring system.
  • FIG. 6 illustrates a library of reference spectra.
  • FIG. 7 illustrates an index trace
  • FIG. 8 illustrates an index trace having a linear function fit to index values collected after clearance of an overlying layer is detected.
  • FIG. 9 is a flow diagram of an example process for fabricating a substrate and detecting a polishing endpoint.
  • FIG. 10 illustrates a plurality of index traces.
  • FIG. 1 1 illustrates a calculation of a plurality of desired slopes for a plurality of adjustable zones based on a time that an index trace of a reference zone reaches a target index.
  • FIG. 12 illustrates a calculation of an endpoint for based on a time that an index trace of a reference zone reaches a target index.
  • FIG. 13 is a flow diagram of an example process for adjusting the polishing rate of a plurality of zones in a plurality of substrates such that the plurality of zones have approximately the same thickness at the target time.
  • FIG. 14 shows a flow chart for detecting clearance of an overlying layer.
  • FIG. 15A shows a graph of spectra collected during a single sweep at the beginning of polishing.
  • FIG. 15B shows a graph of spectra collected during a single sweep near barrier clearing.
  • FIG. 16 shows a graph of standard deviation of spectra as a function of polishing time.
  • FIG. 17 is a graph showing a comparison of different techniques for determining a best matching reference spectrum.
  • FIG. 18 is an example showing a Cauchy generated refraction index dispersion model.
  • FIG. 19 is an examples showing a better spectra fitting of thickness tracking with the n value floating model.
  • FIG. 20 shows a schematic of light traveling into a stack of layers.
  • One optical monitoring technique is to measure spectra of light reflected from a substrate during polishing, and identify a matching reference spectra from a library.
  • the matching reference spectra provide a series of index values, and a function, e.g., a line, is fit to the series of index values.
  • the projection of the function to a target value can be used to determine endpoint or to change a polishing rate.
  • n and k values of the deposited layers used in these models vary from customer to customer and from lot to lot, depending on film composition and film deposition control.
  • some layers such as silicon oxide, carbon-doped silicon oxide, silicon carbide, silicon nitride, carbon-doped silicon nitride, or polysilicon, tend to have variation in the n and k values.
  • even layers that are ostensibly of the same material composition can vary in the n and k values due process conditions in the deposition procedure.
  • customers tightly control their film properties be there may customer-to-customer variation in the n and k values.
  • a plurality of reference spectra can be generated, with the plurality of reference spectra including reference spectra generated for different refractive index or extinction coefficient values for the same layer.
  • a set of one or more refractive index functions and a set of one or more extinction coefficient functions can be stored.
  • a reference spectrum can be calculated for each combination of a refractive index function from the set of refractive index functions and an extinction coefficient function from the set of extinction coefficient functions.
  • some substrates include regions with different stacks of layers. As a very simple example, some regions can include a single dielectric layer over a metal layer, and other regions can include two dielectric layers over a metal layer. Of course, much more complex layer stacks are likely in a real-world application. For example, when polishing a substrate in a back-end-of-line process, some regions of the substrate can include exposed metal, other regions can include a single layer set, and yet other regions can include multiple vertically arranged layer sets. Each layer set can correspond to a metal layer in the metal interconnect structure of the substrate.
  • each layer set includes a dielectric layer, e.g., a low-k dielectric, and an etch-stop layer, e.g., silicon carbide, silicon nitride, or carbon-silicon nitride (SiCN).
  • a dielectric layer e.g., a low-k dielectric
  • an etch-stop layer e.g., silicon carbide, silicon nitride, or carbon-silicon nitride (SiCN).
  • the placement of the light beam on the substrate is not precisely controlled. Consequently the light beam will sometimes land primary on a region with one layer stack, and sometimes the light beam will land primarily on a region with a different layer stack.
  • the percentage contribution to the spectrum from each different layer stack on the substrate can vary from measurement to measurement. However, it is possible to generate multiple reference spectra that span the likely range of variation in contribution by the different layer stacks.
  • n the refractive index
  • c the speed of light in vacuum
  • v the speed of light in the material.
  • a large n means that light travels slowly in the material.
  • the extinction coefficient k is proportional to the absorption coefficient.
  • a large k means the material has a strong absorption (the incident light is strongly attenuated).
  • a substrate can include a first layer and a second layer disposed over the second layer.
  • the first layer can be a dielectric. Both the first layer and the second layer are at least semi-transparent. Together, the first layer and one or more additional layers (if present) provide a layer stack below the second layer.
  • a substrate 10 can include a base structure 12, e.g., a glass sheet or semiconductor wafer, possibility with further layers of conductive or insulating material.
  • a patterned lower first dielectric layer 18 is disposed over the conductive layer 14, and a patterned upper second dielectric layer 22 is disposed over the lower dielectric layer 18.
  • the lower dielectric layer 18 and the upper dielectric layer 22 can be an insulator, e.g., an oxide, such as silicon dioxide, or a low-k material, such as carbon doped silicon dioxide, e.g., Black DiamondTM (from Applied Materials, Inc.) or CoralTM (from Novellus Systems, Inc.).
  • the lower dielectric layer 18 and the upper dielectric layer 22 can be composed of the same material or different materials.
  • a passivation layer 16 e.g., silicon nitride.
  • a etch stop layer 20 e.g., a dielectric material, e.g., silicon carbide, silicon nitride, or carbon-silicon nitride (SiCN).
  • a barrier layer 26 Disposed over the upper dielectric layer 22 and at least into the trenches in the upper dielectric layer 22 is a barrier layer 26 of different composition than the lower dielectric layer 18 and the upper dielectric layer 22.
  • the barrier layer 26 can be a metal or a metal nitride, e.g., tantalum nitride or titanium nitride.
  • the barrier layer 26 first layer and the second layer are one or more additional layers 24 of another dielectric material different from the second dielectric material, e.g., a low-k capping material, e.g., a material formed from tetraethyl orthosilicate (TEOS).
  • a conductive material 28 Disposed over the upper dielectric layer 22 (and at least in trenches provided by the pattern of the upper dielectric layer 22) is a conductive material 28, e.g., a metal, such as copper, tungsten or aluminum.
  • the layers between the conductive layer 14 and the conductive material 28, including the barrier layer 26, can have a sufficiently low extinction coefficient and/or be sufficiently thin that they transmits light from the optical monitoring system.
  • the conductive layer 14 and the conductive material 28 can be sufficiently thick and have a sufficiently high extinction coefficient to be opaque to light from the optical monitoring system.
  • the upper dielectric layer 22 provides the first layer
  • the barrier layer 26 provides the second layer, although other layers are possible for the first layer and the second layer.
  • Chemical mechanical polishing can be used to planarize the substrate until the second layer is exposed.
  • the opaque conductive material 28 is polished until a non-opaque second layer, e.g., the barrier layer 26 is exposed.
  • the portion of the second layer remaining over the first layer is removed and the substrate is polished until the first layer, e.g., the upper dielectric layer 22, is exposed.
  • the portions of the conductive material 28 remaining between the raised pattern of the upper dielectric layer 22 form vias and the like.
  • One method of polishing is to polish the conductive material 28 on a first polishing pad at least until the second layer, e.g., the barrier layer 26, is exposed.
  • a portion of the thickness of the second layer can be removed, e.g., during an overpolishing step at the first polishing pad.
  • the substrate is then transferred to a second polishing pad, where the second layer, e.g., the barrier layer 26 is completely removed, and a portion of the thickness of the first layer, e.g., upper dielectric layer 22, such as the low-k dielectric, is also removed.
  • the additional layer or layers, e.g., the capping layer, between the first and second layer can be removed in the same polishing operation at the second polishing pad.
  • FIG. 2 illustrates an example of a polishing apparatus 100.
  • the polishing apparatus 100 includes a rotatable disk-shaped platen 120 on which a polishing pad 1 10 is situated.
  • the platen is operable to rotate about an axis 125.
  • a motor 121 can turn a drive shaft 124 to rotate the platen 120.
  • the polishing pad 110 can be a two-layer polishing pad with an outer polishing layer 1 12 and a softer backing layer 1 14.
  • the polishing apparatus 100 can include a port 130 to dispense polishing liquid 132, such as a slurry, onto the polishing pad 1 10 to the pad.
  • the polishing apparatus can also include a polishing pad conditioner to abrade the polishing pad 1 10 to maintain the polishing pad 1 10 in a consistent abrasive state.
  • the polishing apparatus 100 includes one or more carrier heads 140.
  • Each carrier head 140 is operable to hold a substrate 10 against the polishing pad 110.
  • Each carrier head 140 can have independent control of the polishing parameters, for example pressure, associated with each respective substrate.
  • each carrier head 140 can include a retaining ring 142 to retain the substrate 10 below a flexible membrane 144.
  • Each carrier head 140 also includes a plurality of independently controllable pressurizable chambers defined by the membrane, e.g., three chambers 146a-146c, which can apply independently controllable pressurizes to associated zones 148a-148c on the flexible membrane 144 and thus on the substrate 10 (see FIG. 3).
  • the center zone 148a can be substantially circular, and the remaining zones 148b-148c can be concentric annular zones around the center zone 148a.
  • FIGS. 2 and 3 only three chambers are illustrated in FIGS. 2 and 3 for ease of illustration, there could be one or two chambers, or four or more chambers, e.g., five chambers.
  • each carrier head 140 is suspended from a support structure 150, e.g., a carousel, and is connected by a drive shaft 152 to a carrier head rotation motor 154 so that the carrier head can rotate about an axis 155.
  • each carrier head 140 can oscillate laterally, e.g., on sliders on the carousel 150; or by rotational oscillation of the carousel itself.
  • the platen is rotated about its central axis 125, and each carrier head is rotated about its central axis 155 and translated laterally across the top surface of the polishing pad.
  • the polishing apparatus also includes an in-situ optical monitoring system
  • An optical access through the polishing pad is provided by including an aperture (i.e., a hole that runs through the pad) or a solid window 118.
  • the solid window 118 can be secured to the polishing pad 1 10, e.g., as a plug that fills an aperture in the polishing pad, e.g., is molded to or adhesively secured to the polishing pad, although in some implementations the solid window can be supported on the platen 120 and project into an aperture in the polishing pad.
  • the optical monitoring system 160 can include a light source 162, a light detector 164, and circuitry 166 for sending and receiving signals between a remote controller 190, e.g., a computer, and the light source 162 and light detector 164.
  • a remote controller 190 e.g., a computer
  • One or more optical fibers can be used to transmit the light from the light source 162 to the optical access in the polishing pad, and to transmit light reflected from the substrate 10 to the detector 164.
  • a bifurcated optical fiber 170 can be used to transmit the light from the light source 162 to the substrate 10 and back to the detector 164.
  • the bifurcated optical fiber an include a trunk 172 positioned in proximity to the optical access, and two branches 174 and 176 connected to the light source 162 and detector 164, respectively.
  • the top surface of the platen can include a recess
  • the optical head 168 can include a mechanism to adjust the vertical distance between the top of the trunk 172 and the solid window 118.
  • the output of the circuitry 166 can be a digital electronic signal that passes through a rotary coupler 129, e.g., a slip ring, in the drive shaft 124 to the controller 190 for the optical monitoring system.
  • the light source can be turned on or off in response to control commands in digital electronic signals that pass from the controller 190 through the rotary coupler 129 to the optical monitoring system 160.
  • the circuitry 166 could communicate with the controller 190 by a wireless signal.
  • the light source 162 can be operable to emit white light. In one
  • the white light emitted includes light having wavelengths of 200-800 nanometers.
  • a suitable light source is a xenon lamp or a xenon mercury lamp.
  • the light detector 164 can be a spectrometer.
  • a spectrometer is an optical instrument for measuring intensity of light over a portion of the electromagnetic spectrum.
  • a suitable spectrometer is a grating spectrometer.
  • Typical output for a spectrometer is the intensity of the light as a function of wavelength (or frequency).
  • the light source 162 and light detector 164 can be connected to a computing device, e.g., the controller 190, operable to control their operation and receive their signals.
  • the computing device can include a microprocessor situated near the polishing apparatus, e.g., a programmable computer. With respect to control, the computing device can, for example, synchronize activation of the light source with the rotation of the platen 120.
  • the light source 162 and detector 164 of the in-situ monitoring system 160 are installed in and rotate with the platen 120.
  • the motion of the platen will cause the sensor to scan across each substrate.
  • the controller 190 can cause the light source 162 to emit a series of flashes starting just before and ending just after the optical access passes below the substrate 10.
  • the computing device can cause the light source 162 to emit light continuously starting just before and ending just after each substrate 10 passes over the optical access.
  • the signal from the detector can be integrated over a sampling period to generate spectra measurements at a sampling frequency.
  • the controller 190 can receive, for example, a signal that carries information describing a spectrum of the light received by the light detector for a particular flash of the light source or time frame of the detector.
  • this spectrum is a spectrum measured in-situ during polishing.
  • each of points 201a-201k represents a location of a spectrum measurement by the monitoring system (the number of points is illustrative; more or fewer measurements can be taken than illustrated, depending on the sampling frequency).
  • the sampling frequency can be selected so that between five and twenty spectra are collected per sweep of the window 108.
  • the sampling period can be between 3 and 100 milliseconds.
  • spectra are obtained from different radii on the substrate 10. That is, some spectra are obtained from locations closer to the center of the substrate 10 and some are closer to the edge.
  • the controller 190 can calculate the radial position (relative to the center of the substrate being scanned) for each measured spectrum from the scan.
  • the polishing system can also include a rotary position sensor, e.g., a flange attached to an edge of the platen that will pass through a stationary optical interrupter, to provide additional data for determination of which substrate and the position on the substrate of the measured spectrum.
  • the controller can thus associate the various measured spectra with the controllable zones 148b- 148e (see FIG. 2) on the substrates 10a and 10b.
  • the time of measurement of the spectrum can be used as a substitute for the exact calculation of the radial position.
  • a sequence of spectra can be obtained over time.
  • the spectrum of light reflected from the substrate 10 evolves as polishing progresses (e.g., over multiple rotations of the platen, not during a single sweep across the substrate) due to changes in the thickness of the outermost layer, thus yielding a sequence of time-varying spectra.
  • particular spectra are exhibited by particular thicknesses of the layer stack.
  • the controller e.g., the computing device, can be programmed to compare a measured spectrum to multiple reference spectra and to determine which reference spectrum provides the best match.
  • the controller can be programmed to compare each spectrum from a sequence of measured spectra from each zone to multiple reference spectra to generate a sequence of best matching reference spectra for each zone.
  • a reference spectrum is a predefined spectrum generated prior to polishing of the substrate.
  • a reference spectrum can have a pre-defined association, i.e., defined prior to the polishing operation, with a value representing a time in the polishing process at which the spectrum is expected to appear, assuming that the actual polishing rate follows an expected polishing rate.
  • the reference spectrum can have a pre-defined association with a value of a substrate property, such as a thickness of the outermost layer.
  • a reference spectrum can be generated empirically, e.g., by measuring the spectra from a test substrate, e.g., a test substrate having a known initial layer thicknesses. For example, to generate a plurality of reference spectra, a set-up substrate is polished using the same polishing parameters that would be used during polishing of device wafers while a sequence of spectra are collected. For each spectrum, a value is recorded representing the time in the polishing process at which the spectrum was collected. For example, the value can be an elapsed time, or a number of platen rotations. The substrate can be overpolished, i.e., polished past a desired thickness, so that the spectrum of the light that reflected from the substrate when the target thickness is achieved can be obtained.
  • the initial spectra and property of a "set-up" substrate with the same pattern as the product substrate can be measured pre-polish at a metrology station.
  • the final spectrum and property can also be measured post-polish with the same metrology station or a different metrology station.
  • the properties for spectra between the initial spectra and final spectra can be determined by interpolation, e.g., linear interpolation based on elapsed time at which the spectra of the test substrate was measured.
  • some or all of the reference spectra can be calculated from theory, e.g., using an optical model of the substrate layers. For example, and optical model can be used to calculate a reference spectrum for a given outer layer thickness D.
  • a value representing the time in the polishing process at which the reference spectrum would be collected can be calculated, e.g., by assuming that the outer layer is removed at a uniform polishing rate.
  • software can be used to automatically calculate multiple reference spectra. Since there are variations in the thicknesses of the underlying layers of the incoming substrates, the manufacturer can input a thickness range and a thickness increment for at least one of the underlying layers, e.g., for multiple underlying layers. The software will calculate a reference spectra for each combination of thicknesses of the underlying layers. Multiple reference spectra can be calculated for each thickness of the overlying layer.
  • the optical stack might include, in order, a layer of metal at the bottom, e.g., the conductive layer 14, the passivation layer, a lower low-k dielectric layer, an etch stop layer, an upper low-k dielectric layer, a TEOS layer, a barrier layer, and a layer of water (to represent the polishing liquid through which the light will be arriving).
  • the barrier layer might range from 300 A to 350 A in 10 A increments
  • the TEOS layer might range from 4800 A to 5200 A in 50 A increments
  • the upper low-k dielectric top layer might range from 1800 A to 2200 A in 20 A increments.
  • the reflectance RSTAC of the top layer p of a thin film stack can be calculated as
  • E p + represents the electro-magnetic field strength of the incoming light beam
  • E p ⁇ represents the electromagnetic field strength of the outgoing light beam
  • the fields E and H in an arbitrary layer j can be calculated using transfer- matrix methods from the fields E and H in an underlying layer.
  • E j and H j can be calculated as
  • ⁇ j (n j - ik j )-cos (
  • >j and g j 2 ⁇ ( - ik j )-t j -cos (
  • ⁇ is the wavelength.
  • the index of refraction n and the extinction coefficient k for each layer can be determined from scientific literature, and can be functions of wavelength.
  • the incidence angle ⁇ can be calculated from Snell's law.
  • the calculation can be iterated for each combination of thickness values of the layers.
  • a potential advantage of this technique is quick generation of a large number of reference spectra that can correspond to different combinations of thicknesses of layers on the substrate, thus improving likelihood of finding a good matching reference spectra and improving accuracy and reliability of the optical monitoring system.
  • the substrate 10 e.g., the upper dielectric layer 22, e.g., a low-k material, of g3 and ⁇ 3 depending on the thickness, index of refraction and extinction coefficient of an underlying layer, e.g., the etch stop layer 20, e.g., SiCN, g2 and ⁇ 2 depending on the thickness, index of refraction and extinction coefficient of another underlying layer, e.g., the lower dielectric layer 18, gi and ⁇ depending on the thickness, index of refraction and extinction coefficient of another underlying layer, e.g., a passiviation layer, e.g., SiN, and ⁇ depending on the index of refraction and extinction coefficient of the bottom layer, e.g., the conductive layer 14, e.g., copper.
  • the conductive layer e.g., copper.
  • the reflectance RSTAC can then be calculated as
  • the substrate and associated optical stack described above is only one possible assembly of layers, and many others are possible.
  • the optical stack described above uses a conductive layer at the bottom of the optical stack, which would be typical for a substrate in a back-end-of-line process.
  • the bottom of the optical stack can be the semiconductor wafer, e.g., silicon.
  • some substrates may not include the lower dielectric layer.
  • the optical model can include variations in the index of refraction and/or the extinction coefficient of one or more layers in the optical stack.
  • the one or more layers can include the underlying layer and/or the overlying layer.
  • the one or more layers may include a layer of silicon oxide, carbon-doped silicon oxide, silicon carbide, silicon nitride, carbon-doped silicon nitride and/or polysilicon.
  • some spectral measurements may be made from substrates with a layer having a higher index of refraction or extinction coefficient, whereas other spectral measurements may be made from substrates with a layer having a lower index of refraction or extinction coefficient.
  • software can be used to receive user input to identify a set of one or more refractive index functions and/or a set of one or more extinction coefficient functions.
  • a refractive index function can provide a refractive index for a material of a layer as a function of wavelength.
  • an extinction coefficient function can provide an extinction coefficient for a material of a layer as a function of wavelength.
  • a plurality of different refractive index functions can be used to generate the reference spectra.
  • a plurality of extinction coefficient functions can be used to generate the reference spectra.
  • the software can calculate a reference spectrum for each combination of a refractive index function from the set of refractive index functions and an extinction coefficient function from the set of extinction coefficient functions.
  • the different refractive index functions can be variants of a common generic refractive index function.
  • the generic refractive index function can be a function of wavelength and one or more additional coefficients, and the different refractive index functions can constitute different values for the coefficient(s).
  • the values of the coefficient(s) can be set by a user, e.g., the semiconductor manufacturer. For example, for a particular coefficient, a user can set the values by inputting a lower value, an upper value and a value increment or a number of total values.
  • the different extinction coefficient functions can be variants of a common generic extinction coefficient function.
  • the generic extinction coefficient function can be a function of wavelength and one or more additional coefficients, and the different extinction coefficient functions can constitute different values for the coefficient(s) .
  • the values of the coefficient(s) can be defined by a user, e.g., the
  • a user can set the values by inputting a lower value, an upper value and a value increment or a number of total values.
  • the uses can also define several sets of value of constants and coefficients. Therefore different sets of extinction coefficient functions can be calculated using the user defined values.
  • refractive index functions and extinction coefficient functions can be modeled with Cauchy equations.
  • the Cauchy model can be used to model ⁇ ( ⁇ ) and k( ) for transparent dielectrics in the visible wavelength range. It is given by
  • FIG. 18 an example of a Cauchy generated refractive index function.
  • the Cauchy model could be used to model just ⁇ ( ⁇ ) or just k k).
  • a baseline Cauchy model is established and then one or more of A n , B n , C n , A k , and B k are allowed to "float" by a user-defined margin. That is, the calculation of spectrum RSTAC can be iterated over multiple values for the coefficient used to generate the functions, e.g., over multiple values for A n , B n , C n , Ak, and B k .
  • a n can vary between 1.40 and 1.50, e.g., at 0.02 increments.
  • a potential advantage of this technique is generation of reference spectra that can correspond to different refractive indexes or different extinction coefficients in a layer on the substrate, thus improving likelihood of finding a good matching reference spectra and improving accuracy and reliability of the optical monitoring system.
  • ⁇ ( ⁇ ) and k( ) can be floated with different user coefficient input.
  • ⁇ ( ⁇ ) which is the refractive index specified by the user with A nl , B n i and Cni
  • k( i) which is the extinction coefficient specified by the user with Aki, Bki and C k i.
  • FIG. 19 is an example showing a better spectra fitting of thickness tracking with the n value floating model (by floating A n and B n ).
  • FIG. 19 demonstrates, a plot of dielectric layer thickness versus polish time is demonstrated. The horizontal axis shows the polish time in seconds; and the vertical axis shows the thickness best match in A. The figure demonstrates three instances of best match. Each instance position is coincidently on top of the others.
  • the generation of a reference spectra library for controlling polishing can include storing an optical model for a layer stack of multiple layers, accepting user input that defines a set of different first values for refraction index coefficients, calculating a refractive index function for each first value to generate a number of refractive index functions, and calculating a reference spectrum using the optical model based on the refractive index function, an extinction coefficient function and a first thickness of the first layer, for each refractive index function.
  • set of one or more refractive index functions may include a plurality of different refractive index functions.
  • set of one or more extinction coefficient functions may include a plurality of different extinction coefficient functions.
  • the optical model can include variations in the spectral contribution of the metal layer. That is, depending on the pattern on the die being manufactured, some spectral measurements may be made in regions with high concentration of metal (e.g., from metal material 28 in the trenches), whereas other spectral measurements may be made in regions with lower concentration of metal.
  • User input to the software may further include a number of different thickness values for the first layer of the substrate. Among these different thickness values, there is at least the first thickness value. Therefore, each set of combination of different refraction index functions, extinction coefficient functions, and thickness values would generate a reference spectrum using the optical model for use in the spectra library.
  • RSTAC I is the first spectrum
  • RSTAC is the second spectrum
  • RREFERENCE is a spectrum of a bottom layer of the first stack and the second stack
  • X is the percentage contribution for the first stack.
  • RLIBRARY can be a combination of multiple stack models. For example, there could be an RSTACKI which is the spectral contribution of the topmost stack (comprising of CAP, dielectric, barrier, and copper substrate), and RSTAC which is the spectral contribution of the two topmost stacks (which is the dielectric and barrier from RSTAC I plus the dielectric, barrier, and copper substrate that would reside beneath it). So the calculation for RLIBRARY could look something like:
  • RSTACKI is the first spectrum
  • RSTACO is the second spectrum
  • RMETAL is the third spectrum
  • RREFERENCE is a spectrum of a bottom layer of the stack
  • X is the percentage contribution for the first stack
  • Y is the percentage contribution for the metal.
  • RBASELINE and RMetai are the same spectrum, e.g., the spectrum for copper.
  • the calculation of spectrum RLIBRARY can be iterated over multiple values for X.
  • X can vary between 0.0 and 1.0 at 0.2 intervals.
  • a potential advantage of this technique is generation of reference spectra that can correspond to different concentrations of metal in the measured spot on the substrate, thus improving likelihood of finding a good matching reference spectra and improving accuracy and reliability of the optical monitoring system.
  • the optical model can include variations in the spectral contribution of the metal layer. That is, depending on the pattern on the die being manufactured, some spectral measurements may be made in regions with high concentration of metal (e.g., from metal material 28 in the trenches), whereas other spectral measurements may be made in regions with lower concentration of metal.
  • a layer of material is defined by refractive index, the extinction coefficient and thickness, for a given material there is each function of refractive index and extinction coefficient that characterize its optical properties, which can either be measured, empirically determined, or modeled.
  • RSTACKI is the first spectrum
  • RSTACO is the second spectrum
  • RMETAL is the third spectrum
  • RREFERENCE is a spectrum of a bottom layer of the stack
  • X is the percentage contribution for the first stack
  • Y is the percentage contribution for the metal.
  • X can vary between 0.0 and 1.0 at 0.1 intervals and Y can vary between 0.0 and 1.0 at 0.1 intervals.
  • a potential advantage of this technique is generation of reference spectra that can correspond to different concentrations of metal in the measured spot on the substrate, thus improving likelihood of finding a good matching reference spectra and improving accuracy and reliability of the optical monitoring system.
  • the multiple measured spectra collected from a single sweep e.g., a sweep across a zone or across the entire substrate, are averaged.
  • the averaged spectra is sampled from a larger area, the averaged spectra have a tighter distribution of percentage contribution from the various layer sets. This permits the user to limit the percentage contributions used in the calculations to a much narrower range. For example, X and Y could vary over a range of 0.2 at 0.02 intervals.
  • the software may receive user input identifying a plurality of different metal contribution percentages for the metal layer, which may include receiving user input identifying a first number of different contribution percentages for the first stack and receiving user input identifying a second number of different contribution percentages for the second stack.
  • the plurality of different metal contribution percentages can be calculated from the first number of different contribution percentages and the second number of different contribution percentages.
  • calculation of the second spectrum can ignore layers below the second layer set, and/or artificially increase the extinction coefficient of some of the layers to represent the reduced likelihood of light reaching those layers.
  • calculation of the first spectrum can include calculating a stack reference RSTAC I
  • the second spectrum can be calculated including a stack reflectance
  • the first stack can include a top dielectric layer and an etch stop layer, e.g., silicon carbide, silicon nitride, or carbon-silicon nitride (SiCN).
  • etch stop layer e.g., silicon carbide, silicon nitride, or carbon-silicon nitride (SiCN).
  • FIG. 20 there can be a distinct contribution of reflection for the top layer set.
  • travel of light into a stack of layers is illustrated.
  • Light 1810, 1820 and 1830 represent incoming and reflecting light passes through different layers.
  • the light 1810 is reflected off from the overlying metal (M7), the light 1820 is reflected from a first layer set (the layers above M6) and the light 1830 is reflected from a second layer set (the layers above M5).
  • FIG. 20 is merely exemplary, and there could be a different number of metal layers and the cut-off could be at a different metal layer.
  • a computer can receive multiple individual spectra. For example, a first spectrum representing a reflectance of a first layer stack on a substrate, including a first layer can be first, can be received. A second spectrum representing a reflectance of a second layer stack on the substrate, the second layer stack including a second layer that is not in the first stack (but includes the first layer), can be received. Moreover, a third spectrum representing a reflectance of a third layer stack on the substrate, the third layer stack including a third layer that is not in the first stack and not in the second stack, can be received. A user, e.g., the semiconductor fab operator, may input the different contribution percentage of these collected stack spectra to generate a library of reference spectra, which may be calculated from the first, second and third spectrum, the first contribution percentage and the second contribution percentage.
  • the reflection of light components can be modeled into three distinct models. For example, for copper contribution, such as the light reflected from the top level copper lines, a theoretical copper reflectance spectra can be used . In some implementations, the known refractive index and extinction coefficient values taken with water layer can be used to compute the copper reflectance component.
  • top layer set contribution which is the reflected light from the top layer set being polished
  • the spectrum can be modeled down to the second metal layer.
  • a capping layer is removed completely and the top dielectric layer is polished to a given thickness.
  • the stack in this case may include: water, a TEOS capping layer, carbon-doped silicon oxide dielectric layer, a silicon carbide etch stop layer block, and copper (substrate).
  • the computational model may neglect TEOS because it will be completely removed.
  • the carbon-doped silicon oxide dielectric layer will have a thickness range in the model from minimum to maximum, representing the polish range.
  • the silicon carbide etch stop layer will generally have a nominal thickness and may be specified by users for a range of expected underlayer variation.
  • the light contains the reflection from remaining underlayers (including the top layer). Therefore the total reflectance is a linear combination of copper, top layer and multi-stack reflectance. For example, the total reflectance equals summation of percentage of contribution of each layer set reflectance.
  • the user may be able to specify the nominal copper contribution, top layer contribution and a range of variation, e.g., by inputting maximum, minimum and step interval values.
  • a final spectrum can be the summation of the portion of lower levels of multi-stack spectrum, the portion of top layer of top layer spectrum and the portion of top layer copper of copper spectrum, which is equivalent to the remaining portion after the previous two are subtracted from the whole.
  • the techniques described above for generation of a library of reference spectra based on an optical model can be sufficient.
  • the reference spectra based on this optical model do not correspond to empirically measured spectra.
  • scattering of light increases, e.g., from the different patterned metal layers on the substrate. In short, as the number of metal layers increases, it becomes less likely that light from lower layers on the substrate will be reflected back to enter the optical fiber and reach the detector.
  • a modified extinction coefficient can be used in the optical model for calculation of the reference spectra.
  • the modified extinction coefficient is larger than the natural extinction coefficient for the material of the layer.
  • An amount added to the extinction coefficient can be larger for layers closer to the wafer.
  • m j is an amount to increase the extinction coefficient of layer j.
  • m j is equal to or greater than 0, and can be up to 1.
  • m j can be small, e.g., 0.
  • m j can larger, e.g., 0.2, 0.4 or 0.6.
  • the amount m j can increase monotonically as j decreases.
  • the amount m j can be functions of wavelength, e.g., for a particular layer, m j can be greater at longer wavelengths or can be greater at shorter wavelengths.
  • a measured spectrum 300 can be compared to reference spectra 320 from one or more libraries 310 (see FIG. 6).
  • a library of reference spectra is a collection of reference spectra which represent substrates that share a property in common.
  • the property shared in common in a single library may vary across multiple libraries of reference spectra.
  • two different libraries can include reference spectra that represent substrates with two different underlying thicknesses.
  • variations in the upper layer thickness, rather than other factors can be primarily responsible for the differences in the spectral intensities.
  • Reference spectra 320 for different libraries 310 can be generated by polishing multiple "set-up" substrates with different substrate properties (e.g., underlying layer thicknesses, or layer composition) and collecting spectra as discussed above; the spectra from one set-up substrate can provide a first library and the spectra from another substrate with a different underlying layer thickness can provide a second library.
  • substrate properties e.g., underlying layer thicknesses, or layer composition
  • reference spectra for different libraries can be calculated from theory, e.g., spectra for a first library can be calculated using the optical model with the underlying layer having a first thickness, and spectra for a second library can be calculated using the optical model with the underlying layer having a different one thickness.
  • this disclosure uses a copper substrate for generating the library and later for spectra measurements.
  • each reference spectrum 320 is assigned an index value 330.
  • each library 310 can include many reference spectra 320, e.g., one or more, e.g., exactly one, reference spectra for each platen rotation over the expected polishing time of the substrate.
  • This index 330 can be the value, e.g., a number, representing the time in the polishing process at which the reference spectrum 320 is expected to be observed.
  • the spectra can be indexed so that each spectrum in a particular library has a unique index value. The indexing can be implemented so that the index values are sequenced in an order in which the spectra of a test substrate were measured.
  • index value can be selected to change monotonically, e.g., increase or decrease, as polishing progresses.
  • the index values of the reference spectra can be selected so that they form a linear function of time or number of platen rotations (assuming that the polishing rate follows that of the model or test substrate used to generate the reference spectra in the library).
  • the index value can be proportional, e.g., equal, to a number of platen rotations at which the reference spectra was measured for the test substrate or would appear in the optical model.
  • each index value can be a whole number.
  • the index number can represent the expected platen rotation at which the associated spectrum would appear.
  • the reference spectra and their associated index values can be stored in a reference library.
  • each reference spectrum 320 and its associated index value 330 can be stored in a record 340 of database 350.
  • the database 350 of reference libraries of reference spectra can be implemented in memory of the computing device of the polishing apparatus.
  • the controller 190 can be programmed to generate a sequence of best matching spectra.
  • a best matching reference spectrum can be determined by comparing a measured spectrum to the reference spectra from a particular library.
  • the best matching reference spectrum can be determined by calculating, for each reference spectrum, a sum of squared differences between the measured spectrum and the reference spectrum.
  • the reference spectrum with the lowest sum of squared differences has the best fit.
  • Other techniques for finding a best matching reference spectrum are possible, e.g., lowest sum of absolute differences.
  • the best matching reference spectrum can be determined by using a matching technique other than sum of squared differences.
  • a cross-correlation between the measured spectrum and the reference spectrum is calculated, and the reference spectrum with the greatest correlation is selected as the matching reference spectrum.
  • a potential advantage of cross-correlation is that it is less sensitive to lateral shift of a spectrum, and thus can be less sensitive to underlying thickness variation.
  • the leading and trailing ends of the measured spectrum can be padded with "zeros" to provide data to compare against the reference spectrum as the reference spectrum is shifted relative to the measured spectrum.
  • the leading end of the measured spectrum can be padded with values equal to the value at the leading edge of the measured spectrum, and he trailing end of the measured spectrum can be padded with values equal to the value at the trailing edge of the measured spectrum.
  • Fast Fourier transforms can be used to increase the speed of calculation of the cross-correlation for real-time application of the matching technique.
  • the index value of each of the best matching spectra in the sequence can be determined to generate a time-varying sequence of index values 212.
  • This sequence of index values can be termed an index trace 210.
  • an index trace is generated by comparing each measured spectrum to the reference spectra from exactly one library.
  • the index trace 210 can include one, e.g., exactly one, index value per sweep of the optical monitoring system below the substrate.
  • each selected current spectra is compared against each reference spectra of the selected library or libraries.
  • a matching coefficient could be calculated for each of the following combinations of current and reference spectra: e and E, e and F, e and G, f and E, f and F, f and G, g and E, g and F, and g and G.
  • Whichever matching coefficient indicates the best match e.g., is the smallest, determines the best-matching reference spectrum, and thus the index value.
  • the current spectra can be combined, e.g., averaged, and the resulting combined spectrum is compared against the reference spectra to determine the best match, and thus the index value.
  • a plurality of index traces can be generated. For a given zone of a given substrate, an index trace can be generated for each reference library of interest. That is, for each reference library of interest to the given zone of the given substrate, each measured spectrum in a sequence of measured spectra is compared to reference spectra from a given library, a sequence of the best matching reference spectra is determined, and the index values of the sequence of best matching reference spectra provide the index trace for the given library.
  • each index trace includes a sequence 210 of index values 212, with each particular index value 212 of the sequence being generated by selecting the index of the reference spectrum from a given library that is the closest fit to the measured spectrum.
  • the time value for each index of the index trace 210 can be the same as the time at which the measured spectrum was measured.
  • An in-situ monitoring technique is used to detect clearing of the second layer and exposure of the underlying layer or layer structure. For example, exposure of the first layer at a time TC can be detected by a sudden change in the motor torque or total intensity of light reflected from the substrate, or from dispersion of the collected spectra as discussed in greater detail below.
  • a function e.g., a polynomial function of known order, e.g., a first-order function (e.g., a line 214 ) is fit to the sequence of index values of spectra collected after time TC, e.g., using robust line fitting. Index values for spectra collected before the time TC are ignored when fitting the function to the sequence of index values.
  • Other functions can be used, e.g., polynomial functions of second-order, but a line provides ease of computation. Polishing can be halted at an endpoint time TE that the line 214 crosses a target index IT.
  • FIG. 9 shows a flow chart of a method of fabricating and polishing a product substrate.
  • the product substrate can have at least the same layer structure and the same pattern, as the test substrates used to generate the reference spectra of the library.
  • the first layer is deposited on the substrate and patterned (step 902).
  • the first layer can be a dielectric, e.g., a low-k material, e.g., carbon doped silicon dioxide, e.g., Black DiamondTM (from Applied Materials, Inc.) or CoralTM (from Novellus Systems, Inc.).
  • a low-k material e.g., carbon doped silicon dioxide
  • CoralTM from Novellus Systems, Inc.
  • one or more additional layers of another dielectric material different from both the first material, e.g., a low-k capping material, e.g., tetraethyl orthosilicate (TEOS)
  • TEOS tetraethyl orthosilicate
  • patterning can occur after depositing of the one or more additional layers (so that the one or more additional layers do not extend into the trench in the first layer, as shown in FIG. 1A).
  • the second layer of a different material e.g., a barrier layer, e.g., a nitride, e.g., tantalum nitride or titanium nitride, is deposited over the first layer or layer stack of the product substrate (step 904).
  • a conductive layer e.g., a metal layer, e.g., copper
  • patterning of the first layer can occur after depositing of the second layer (in which case the second layer would not extend into the trench in the first layer).
  • the product substrate is polished (step 908).
  • the conductive layer and a portion of the second layer can be polished and removed at a first polishing station using a first polishing pad (step 908a).
  • the second layer and a portion of the first layer can be polished and removed at a second polishing station using a second polishing pad (step 908b).
  • there is no conductive layer e.g., the second layer is the outermost layer when polishing begins.
  • steps 902-906 can be performed elsewhere, so that the process for a particular operator of the polishing apparatus begins with step 908.
  • An in-situ monitoring technique is used to detect clearing of the second layer and exposure of the first layer (step 910).
  • exposure of the first layer at a time TC can be detected by a sudden change in the motor torque or total intensity of light reflected from the substrate, or from dispersion of the collected spectra as discussed in greater detail below.
  • a sequence of measured spectra are obtained during polishing (step 912), e.g., using the in-situ monitoring system described above.
  • the measured spectra are analyzed to generate a sequence of index values, and a function is fit to the sequence of index values.
  • a function is fit to the sequence of index values.
  • the index value for the reference spectrum that is the best fit is determined to generate the sequence of index values (step 914).
  • a function e.g., a linear function, is fit to the sequence of index values for the spectra collected after the time TC at which clearance of the second layer is detected (step 916). In other words, index values for spectra collected before the time TC at which clearance of the second layer is detected are not used in the calculation of the function.
  • Polishing can be halted once the index value (e.g., a calculated index value generated from the linear function fit to the new sequence of index values) reaches target index (step 918).
  • the target thickness IT can be set by the user prior to the polishing operation and stored.
  • a target amount to remove can be set by the user, and a target index IT can be calculated from the target amount to remove.
  • an index difference ID can be calculated from the target amount to remove, e.g., from an empirically determined ratio of amount removed to the index (e.g., the polishing rate), and adding the index difference ID to the index value IC at the time TC that clearance of the overlying layer is detected (see FIG. 8).
  • an index trace can be generated for each zone.
  • a first sequence 210 of index values 212 (shown by hollow circles) can be generated for a first zone
  • a second sequence 220 of index values 222 can be generated for a second zone
  • a third sequence 230 of index values 232 (shown by hollow triangles) can be generated for a third zone.
  • three zones are shown, there could be two zones or four or more zones. All of the zones can be on the same substrate, or some of the zones can be from different substrates being polished simultaneously on the same platen.
  • an in-situ monitoring technique is used to detect clearing of the second layer and exposure of the underlying layer or layer structure.
  • exposure of the first layer at a time TC can be detected by a sudden change in the motor torque or total intensity of light reflected from the substrate, or from dispersion of the collected spectra as discussed in greater detail below.
  • a polynomial function of known order e.g., a first-order function (e.g., a line) is fit to the sequence of index values of spectra collected after time TC for the associated zone, e.g., using robust line fitting.
  • a first line 214 can be fit to index values 212 for the first zone
  • a second line 224 can be fit to the index values 222 of the second zone
  • a third line 234 can be fit to the index values 232 of the third zone.
  • Fitting of a line to the index values can include calculation of the slope S of the line and an x-axis intersection time T at which the line crosses a starting index value, e.g., 0.
  • the x-axis intersection time T can have a negative value, indicating that the starting thickness of the substrate layer is less than expected.
  • the first line 214 can have a first slope SI and a first x-axis intersection time Tl
  • the second line 224 can have a second slope S2 and a second x-axis intersection time T2
  • the third line 234 can have a third slope S3 and a third x-axis intersection time T3.
  • a polishing parameter for at least one zone is adjusted to adjust the polishing rate of the zone of the substrate such that at a polishing endpoint time, the plurality of zones are closer to their target thickness than without such adjustment.
  • each zone can have approximately the same thickness at the endpoint time.
  • one zone is selected as a reference zone, and a projected endpoint time TE at which the reference zone will reach a target index IT is determined.
  • the first zone is selected as the reference zone, although a different zone and/or a different substrate could be selected.
  • the target thickness IT is set by the user prior to the polishing operation and stored.
  • a target amount to remove TR can be set by the user, and a target index IT can be calculated from the target amount to remove TR.
  • an index difference ID can be calculated from the target amount to remove, e.g., from an empirically determined ratio of amount removed to the index (e.g., the polishing rate), and adding the index difference ID to the index value IC at the time TC that clearance of the overlying layer is detected.
  • the intersection of the line of the reference zone, e.g., line 214, with the target index, IT can be calculated. Assuming that the polishing rate does not deviate from the expected polishing rate through the remainder polishing process, then the sequence of index values should retain a substantially linear progression.
  • One or more zones can be defined as adjustable zones. Where the lines for the adjustable zones meet the expected endpoint time TE define projected endpoint for the adjustable zones.
  • the linear function of each adjustable zone e.g., lines 224 and 234 in FIG. 11, can thus be used to extrapolate the index, e.g., EI2 and EI3, that will be achieved at the expected endpoint time ET for the associated zone.
  • the second line 224 can be used to extrapolate the expected index, EI2, at the expected endpoint time ET for the second zone
  • the third line 234 can be used to extrapolate the expected index, EI3, at the expected endpoint time ET for the third zone.
  • each zone can have a different thickness (which is not desirable because it can lead to defects and loss of throughput).
  • the polishing rate can be adjusted upwardly or downwardly, such that the zones would reach the target index (and thus target thickness) closer to the same time than without such adjustment, e.g., at approximately the same time, or would have closer to the same index value (and thus same thickness), at the target time than without such adjustment, e.g., approximately the same index value (and thus approximately the same thickness).
  • At least one polishing parameter for the second zone is modified so that the polishing rate of the zone is increased (and as a result the slope of the index trace 220 is increased).
  • at least one polishing parameter for the third zone is modified so that the polishing rate of the third zone is decreased (and as a result the slope of the index trace 230 is decreased).
  • the zones would reach the target index (and thus the target thickness) at approximately the same time (or if pressure to the zones halts at the same time, the zones will end with approximately the same thickness).
  • ET indicate that a zone of the substrate is within a predefined range of the target thickness, then no adjustment may be required for that zone.
  • the range may be 2%, e.g., within 1%, of the target index.
  • the polishing rates for the adjustable zones can be adjusted so that all of the zones are closer to the target index at the expected endpoint time than without such adjustment.
  • a reference zone of the reference substrate might be chosen and the processing parameters for all of the other zone adjusted such that all of the zones will endpoint at approximately the projected time of the reference substrate.
  • the reference zone can be, for example, a predetermined zone, e.g., the center zone 148a or the zone 148b immediately surrounding the center zone, the zone having the earliest or latest projected endpoint time of any of the zones of any of the substrates, or the zone of a substrate having the desired projected endpoint. The earliest time is equivalent to the thinnest substrate if polishing is halted at the same time.
  • the latest time is equivalent to the thickest substrate if polishing is halted at the same time.
  • the reference substrate can be, for example, a predetermined substrate, a substrate having the zone with the earliest or latest projected endpoint time of the substrates.
  • the earliest time is equivalent to the thinnest zone if polishing is halted at the same time.
  • the latest time is equivalent to the thickest zone if polishing is halted at the same time.
  • a desired slope for the index trace can be calculated such that the adjustable zone reaches the target index at the same time as the reference zone.
  • the expected endpoint time can be a predetermined time, e.g., set by the user prior to the polishing process, or can be calculated from an average or other combination of the expected endpoint times of two or more zones (as calculated by projecting the lines for various zones to the target index) from one or more substrates.
  • the target indexes can be entered by user, e.g., using an input device on the controller.
  • the first zone of the first substrate can have a first target index
  • the second zone of the first substrate can have a second target index
  • the first zone of the second substrate can have a third target index
  • the second zone of the second substrate can have a fourth target index.
  • the polishing rate is adjusted to bring the slope of index trace closer to the desired slope.
  • the polishing rates can be adjusted by, for example, increasing or decreasing the pressure in a corresponding chamber of a carrier head.
  • the change in polishing rate can be assumed to be directly proportional to the change in pressure, e.g., a simple Prestonian model.
  • the process of determining projected times that the substrates will reach the target thickness, and adjusting the polishing rates can be performed just once during the polishing process, e.g., at a specified time, e.g., 40 to 60% through the expected polishing time, or performed multiple times during the polishing process, e.g., every thirty to sixty seconds.
  • the rates can again be adjusted, if appropriate.
  • changes in the polishing rates can be made only a few times, such as four, three, two or only one time. The adjustment can be made near the beginning, at the middle or toward the end of the polishing process.
  • Polishing continues after the polishing rates have been adjusted, e.g., after time TO, the optical monitoring system continues to collect spectra for at least the reference zone and determine index values for the reference zone. In some implementations, the optical monitoring system continues to collect spectra and determine index values for each zone. Once the index trace of a reference zone reaches the target index, endpoint is called and the polishing operation stops.
  • the optical monitoring system continues to collect spectra for the reference zone and determine index values 312 for the reference zone. If the pressure on the reference zone did not change (e.g., as in the implementation of FIG. 11), then the linear function can be calculated using data points from both before TO (but not before TC) and after TO to provide an updated linear function 314, and the time at which the linear function 314 reaches the target index IT indicates the polishing endpoint time.
  • a new linear function 314 with a slope S' can be calculated from the sequence of index values 312 after time TO, and the time at which the new linear function 314 reaches the target index IT indicates the polishing endpoint time.
  • the reference zone used for determining endpoint can be the same reference zone used as described above to calculate the expected endpoint time, or a different zone (or if all of the zones were adjusted as described with reference to FIG. 11 , then a reference zone can be selected for the purpose of endpoint determination). If the new linear function 314 reaches the target index IT slightly later (as shown in FIG.
  • one or more of the zones may be slightly overpolished or underpolished, respectively. However, since the difference between the expected endpoint time and the actual polishing time should be less than a couple seconds, this need not severely impact the polishing uniformity.
  • the substrate is immediately subjected to an overpolishing process, e.g., to remove copper residue.
  • the overpolishing process can be at a uniform pressure for all zones of the substrate, e.g., 1 to 1.5 psi.
  • the overpolishing process can have a preset duration, e.g., 10 to 15 seconds.
  • multiple index traces are generated for a particular zone, e.g., one index trace for each library of interest to the particular zone, then one of the index traces can be selected for use in the endpoint or pressure control algorithm for the particular zone.
  • the controller 190 can fit a linear function to the index values of that index trace, and determine a goodness of fit of that linear function to the sequence of index values.
  • the index trace generated having the line with the best goodness of fit its own index values can be selected as the index trace for the particular zone and substrate.
  • the linear function with the best goodness of fit can be used in the calculation.
  • endpoint can be called when the calculated index (as calculated from the linear function fit to the sequence of index values) for the line with the best goodness of fit matches or exceeds the target index.
  • the index values themselves could be compared to the target index to determine the endpoint.
  • Determining whether an index trace associated with a spectra library has the best goodness of fit to the linear function associated with the library can include determining whether the index trace of the associated spectra library has the least amount of difference from the associated robust line, relatively, as compared to the differences from the associated robust line and index trace associated with another library, e.g., the lowest standard deviation, the greatest correlation, or other measure of variance.
  • the goodness of fit is determined by calculating a sum of squared differences between the index data points and the linear function; the library with the lowest sum of squared differences has the best fit.
  • a summary flow chart 1300 is illustrated.
  • a plurality of zones of a substrate are polished in a polishing apparatus simultaneously with the same polishing pad (step 1302) as described above.
  • each zone has its polishing rate controllable independently of the other substrates by an independently variable polishing parameter, e.g., the pressure applied by the chamber in carrier head above the particular zone.
  • the substrate is monitored (step 1304) as described above, e.g., with a sequence of measure spectra obtained from each zone.
  • the reference spectrum that is the best match is determined (step 1306).
  • the index value for each reference spectrum that is the best fit is determined to generate sequence of index values (step 1308).
  • Clearance of the second layer is detected (step 1310).
  • a linear function is fit to the sequence of index values for spectra collected after clearance of the second layer is detected (step 1302).
  • an expected endpoint time that the linear function for a reference zone will reach a target index value is determined, e.g., by linear interpolation of the linear function (step 1314).
  • the expected endpoint time is predetermined or calculated as a combination of expected endpoint times of multiple zones. If needed, the polishing parameters for the other zones are adjusted to adjust the polishing rate of that substrate such that the plurality of zones reach the target thickness at approximately the same time or such that the plurality of zones have
  • Polishing continues after the parameters are adjusted, and for each zone, measuring a spectrum, determining the best matching reference spectrum from a library, determining the index value for the best matching spectrum to generate a new sequence of index values for the time period after the polishing parameter has been adjusted, and fitting a linear function to index values (step 1318). Polishing can be halted once the index value for a reference zone (e.g., a calculated index value generated from the linear function fit to the new sequence of index values) reaches target index (step 1330).
  • a reference zone e.g., a calculated index value generated from the linear function fit to the new sequence of index values
  • the sequence of index values is used to adjust the polishing rate of one or more zones of a substrate, but another in-situ monitoring system or technique is used to detect the polishing endpoint.
  • a sequence of groups of spectra are collected, and a value of a dispersion parameter is calculated for a each group of spectra to generate sequence of dispersion values.
  • the clearance of the overlying layer can be detected from the sequence of dispersion values. This technique can be used to detect clearing of the second layer and exposure of the first layer, e.g., in steps 910 or 1310 of the polishing operations described above.
  • FIG. 14 shows a method 1400 for detecting clearance of the second layer and exposure of the first layer.
  • a sequence of groups of spectra are collected (step 1404).
  • spectra can be collected from multiple different locations 201b-201j on the substrate.
  • the spectra collected from a single sweep provide a group of spectra.
  • multiple sweeps of the optical monitoring system provide a sequence of groups of spectra.
  • One group of spectra can be collected for each platen rotation, e.g., the groups can be collected at frequency equal to the platen rotation rate. Typically, each group will include five to twenty spectra.
  • the spectra can be collected using the same optical monitoring system that is used to collect spectra for the peak tracking technique discussed above.
  • FIG. 15A provides an example of a group of measured spectra 1500a of light reflected from the substrate 10 at the beginning of polishing, e.g., when a significant thickness of the overlying layer remains over the underlying layer.
  • the group of spectra 1500a can include spectra 202a-204a collected at different locations on the substrate in a first sweep of the optical monitoring system across the substrate.
  • FIG. 15B provides an example of a group of measured spectra 1500b of light reflected from the substrate 10 at or near clearance of the overlying layer.
  • the group of spectra 1500b can include spectra 202b-204b collected at different locations on the substrate in a different second sweep of the optical monitoring system across the substrate (the spectra 1500a can be collected from different locations on the substrate than the spectra 1500b).
  • the spectra 1500a are fairly similar. However, as shown in FIG. 15B, as the overlying layer, e.g., a barrier layer, is cleared, and the underlying layer, e.g., a low-k or capping layer, is exposed, differences between the spectra 1500b from different locations on the substrate tend to become more pronounced.
  • the overlying layer e.g., a barrier layer
  • the underlying layer e.g., a low-k or capping layer
  • a value of a dispersion parameter of the spectra in the group is calculated (step 1406). This generates a sequence of dispersion values.
  • the value of the dispersion parameter can be calculated for the group from the difference values.
  • a variety of dispersion parameters are possible, such as standard deviation, interquartile range, range (maximum value minus minimum value), mean difference, median absolute deviation and average absolute deviation.
  • the sequence of dispersion values can be analyzed and used to detect clearance of the overlying layer (step 1408).
  • FIG. 16 shows a graph 1600 of the standard deviation of the spectra as a function of polishing time (with each standard deviation calculated from the difference values of a group of spectra).
  • each plotted point 1602 in the graph is a standard deviation for the difference values of the group of spectra collected at a given sweep of the optical monitoring system.
  • the standard deviation values remain fairly low during a first time period 1610.
  • the standard deviation values become larger and more disperse.
  • a thick barrier layer may tend to dominate the reflected spectrum, masking differences in thickness of the barrier layer itself and any underlying layer. As polishing progresses, the barrier layer becomes thinner or is completely removed, and the reflected spectrum becomes more sensitive to variations in the underlying layer thickness. As a result, the dispersion of the spectra will tend to increase as the barrier layer is cleared.
  • a variety of algorithms can be used to detect the change in behavior of the dispersion values when the overlying layer is clearing. For example, the sequence of dispersion values can be compared to a threshold, and if a dispersion value exceeds the threshold, then a signal is generated indicating that the overlying layer has cleared. As another example, a slope of a portion of the sequence of dispersion values within a moving window can be calculated, and if the slope exceeds a threshold value then a signal is generated indicating that the overlying layer has cleared.
  • the sequence of dispersion values can be subject to a filter, e.g., a low-pass or band filter, in order to remove high frequency noise.
  • a filter e.g., a low-pass or band filter
  • Examples of low-pass filters include moving average and Butterworth filters.
  • the technique can be used detection clearance of an overlying layer in other contexts, e.g., clearance of an overlying layer in another type semiconductor process that uses dielectric layer stacks, e.g., interlayer dielectric (ILD), or clearance of a thin metal layer over a dielectric layer.
  • ILD interlayer dielectric
  • this technique for detecting clearance of an overlying layer can be used for other purposes in a polishing operation, e.g., to be used as the endpoint signal itself, to trigger a timer so that the underlying layer is polished for a predetermined duration following exposure, or as a trigger to modify polishing parameter, e.g., to change carrier head pressure or slurry composition upon exposure of the underlying layer.
  • the discussion above assumes a rotating platen with an optical endpoint monitor installed in the platen, system could be applicable to other types of relative motion between the monitoring system and the substrate.
  • the light source traverses different positions on the substrate, but does not cross the edge of the substrate.
  • the collected spectra can still be grouped, e.g., spectra can be collected at a certain frequency and spectra collected within a time period can be considered part of a group. The time period should be sufficiently long that five to twenty spectra are collected for each group.
  • the term substrate can include, for example, a product substrate (e.g., which includes multiple memory or processor dies), a test substrate, a bare substrate, and a gating substrate.
  • the substrate can be at various stages of integrated circuit fabrication, e.g., the substrate can be a bare wafer, or it can include one or more deposited and/or patterned layers.
  • the term substrate can include circular disks and rectangular sheets.
  • Embodiments of the invention and all of the functional operations described in this specification can be implemented in digital electronic circuitry, or in computer software, firmware, or hardware, including the structural means disclosed in this specification and structural equivalents thereof, or in combinations of them.
  • Embodiments of the invention can be implemented as one or more computer program products, i.e., one or more computer programs tangibly embodied in a machine readable storage media, for execution by, or to control the operation of, data processing apparatus, e.g., a programmable processor, a computer, or multiple processors or computers.
  • a computer program (also known as a program, software, software application, or code) can be written in any form of programming language, including compiled or interpreted languages, and it can be deployed in any form, including as a stand alone program or as a module, component, subroutine, or other unit suitable for use in a computing environment.
  • a computer program does not necessarily correspond to a file.
  • a program can be stored in a portion of a file that holds other programs or data, in a single file dedicated to the program in question, or in multiple coordinated files (e.g., files that store one or more modules, sub programs, or portions of code).
  • a computer program can be deployed to be executed on one computer or on multiple computers at one site or distributed across multiple sites and interconnected by a communication network.
  • the processes and logic flows described in this specification can be performed by one or more programmable processors executing one or more computer programs to perform functions by operating on input data and generating output.
  • the processes and logic flows can also be performed by, and apparatus can also be implemented as, special purpose logic circuitry, e.g., an FPGA (field programmable gate array) or an ASIC (application specific integrated circuit).
  • FIG. 17 illustrates a comparison of index traces (indexes of best matching reference spectra as a function number of platen rotations) for spectra matching using cross- correlation and sum of squared differences methods for substrates with different thicknesses of the TEOS layer.
  • the data was generated for product substrates having a stack of 1500 A thick layer of Black Diamond, a 130 A thick layer of Blok, and a TEOS layer that is 5200 A, 5100 A or 5000 A thick.
  • a reference library was generated for a reference substrate having a TEOS layer that is 5200 A thick.
  • the two index traces overlap with no appreciable difference.
  • the index trace 1704 generated using sum of squared differences has some departure from linear behavior.
  • the index trace generated using cross-correlation overlaps the index trace 1702 (and is thus not visible in the graph).
  • the index trace 1706 generated using sum of squared differences has a significant departure from linear behavior and the trace 1702, whereas the index trace 1708 generated using cross- correlation remains generally linear and much closer to the trace 1702.
  • a method that can be applied to decrease computer processing is to limit the portion of the library that is searched for matching spectra.
  • the library typically includes a wider range of spectra than will be obtained while polishing a substrate.
  • the library searching is limited to a predetermined range of library spectra.
  • the current rotational index N of a substrate being polished is determined.
  • N can be determined by searching all of the reference spectra of the library.
  • the library is searched within a range of freedom of N. That is, if during one rotation the index number is found to be N, during a subsequent rotation which is X rotations later, where the freedom is Y, the range that will be searched from (N + X) - Y to (N + X) + Y.
  • polishing apparatus and methods can be applied in a variety of polishing systems.
  • Either the polishing pad, or the carrier heads, or both can move to provide relative motion between the polishing surface and the substrate.
  • the platen may orbit rather than rotate.
  • the polishing pad can be a circular (or some other shape) pad secured to the platen.
  • Some aspects of the endpoint detection system may be applicable to linear polishing systems, e.g., where the polishing pad is a continuous or a reel-to-reel belt that moves linearly.
  • the polishing layer can be a standard (for example, polyurethane with or without fillers) polishing material, a soft material, or a fixed-abrasive material. Terms of relative positioning are used; it should be understood that the polishing surface and substrate can be held in a vertical orientation or some other orientation.

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Abstract

Un procédé de production d'une bibliothèque de spectres de référence comprend le stockage d'un modèle optique pour une pile de couches ayant une pluralité de couches, et pour chaque combinaison d'une fonction d'indice de réfraction issue d'un ensemble de fonctions d'indice de réfraction et d'une fonction de coefficient d'extinction issue d'un ensemble de fonctions de coefficient d'extinction, le calcul d'un spectre de référence à l'aide du modèle optique. Un autre procédé de production d'une bibliothèque de spectres de référence comprend la réception d'une entrée utilisateur identifiant une pluralité de pourcentages de contribution différents pour une première pile et/ou une seconde pile sur le substrat, et pour chaque pourcentage de contribution de la pluralité de pourcentages de contribution différents, le calcul d'un spectre de référence à partir d'un premier spectre pour la première pile, d'un second spectre pour la seconde pile et du pourcentage de contribution.
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JP2014512704A (ja) 2014-05-22
WO2012148716A3 (fr) 2012-12-20
KR101981814B1 (ko) 2019-05-23
JP6030636B2 (ja) 2016-11-24
TWI574787B (zh) 2017-03-21

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