WO2012148862A3 - Surveillance de courant de foucault de résidu métallique ou de colonnes métalliques - Google Patents

Surveillance de courant de foucault de résidu métallique ou de colonnes métalliques Download PDF

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Publication number
WO2012148862A3
WO2012148862A3 PCT/US2012/034712 US2012034712W WO2012148862A3 WO 2012148862 A3 WO2012148862 A3 WO 2012148862A3 US 2012034712 W US2012034712 W US 2012034712W WO 2012148862 A3 WO2012148862 A3 WO 2012148862A3
Authority
WO
WIPO (PCT)
Prior art keywords
metal
eddy current
current monitoring
polishing
residue
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2012/034712
Other languages
English (en)
Other versions
WO2012148862A2 (fr
Inventor
Hassan G. Iravani
Kun Xu
Boguslaw A. Swedek
Ingemar Carlsson
Shih-Haur Shen
Wen-Chiang Tu
David Maxwell Gage
James C. Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to KR1020137031405A priority Critical patent/KR20140028036A/ko
Priority to JP2014508471A priority patent/JP2014513435A/ja
Publication of WO2012148862A2 publication Critical patent/WO2012148862A2/fr
Publication of WO2012148862A3 publication Critical patent/WO2012148862A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

La présente invention concerne un procédé de polissage chimique-mécanique d'un substrat qui comprend le polissage d'une couche de métal sur le substrat à une station de polissage, la surveillance de l'épaisseur de la couche de métal pendant le polissage à la station de polissage avec un système de surveillance de courant de Foucault, et l'arrêt du polissage lorsque le système de surveillance de courant de Foucault indique que le résidu de la couche de métal est enlevé d'une couche sous-jacente et une surface supérieure de la couche sous-jacente est exposée.
PCT/US2012/034712 2011-04-27 2012-04-23 Surveillance de courant de foucault de résidu métallique ou de colonnes métalliques Ceased WO2012148862A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020137031405A KR20140028036A (ko) 2011-04-27 2012-04-23 금속 잔류물 또는 금속 필러의 와전류 모니터링
JP2014508471A JP2014513435A (ja) 2011-04-27 2012-04-23 金属残留物または金属ピラーの渦電流モニタリング

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/095,822 2011-04-27
US13/095,822 US20120276817A1 (en) 2011-04-27 2011-04-27 Eddy current monitoring of metal residue or metal pillars

Publications (2)

Publication Number Publication Date
WO2012148862A2 WO2012148862A2 (fr) 2012-11-01
WO2012148862A3 true WO2012148862A3 (fr) 2012-12-27

Family

ID=47068235

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/034712 Ceased WO2012148862A2 (fr) 2011-04-27 2012-04-23 Surveillance de courant de foucault de résidu métallique ou de colonnes métalliques

Country Status (5)

Country Link
US (1) US20120276817A1 (fr)
JP (1) JP2014513435A (fr)
KR (1) KR20140028036A (fr)
TW (1) TW201249592A (fr)
WO (1) WO2012148862A2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9205527B2 (en) * 2012-11-08 2015-12-08 Applied Materials, Inc. In-situ monitoring system with monitoring of elongated region
KR101699197B1 (ko) * 2013-03-15 2017-01-23 어플라이드 머티어리얼스, 인코포레이티드 인-시튜 프로파일 제어(ｉｓｐｃ)를 이용한 동적 잔류물 클리어링 제어
JP6105371B2 (ja) 2013-04-25 2017-03-29 株式会社荏原製作所 研磨方法および研磨装置
US9911664B2 (en) 2014-06-23 2018-03-06 Applied Materials, Inc. Substrate features for inductive monitoring of conductive trench depth
KR102807367B1 (ko) * 2016-10-21 2025-05-15 어플라이드 머티어리얼스, 인코포레이티드 인-시튜 전자기 유도 모니터링 시스템을 위한 코어 구성
US10515862B2 (en) * 2017-04-05 2019-12-24 Applied Materials, Inc. Wafer based corrosion and time dependent chemical effects
US10170343B1 (en) * 2017-06-30 2019-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Post-CMP cleaning apparatus and method with brush self-cleaning function
TWI810069B (zh) 2020-06-08 2023-07-21 美商應用材料股份有限公司 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品
CN116000741A (zh) * 2022-12-23 2023-04-25 滁州市博康模具塑料有限公司 一种模具滑块加工装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5343146A (en) * 1992-10-05 1994-08-30 De Felsko Corporation Combination coating thickness gauge using a magnetic flux density sensor and an eddy current search coil
US20020055192A1 (en) * 2000-07-27 2002-05-09 Redeker Fred C. Chemical mechanical polishing of a metal layer with polishing rate monitoring
US20060021974A1 (en) * 2004-01-29 2006-02-02 Applied Materials, Inc. Method and composition for polishing a substrate
US7264537B1 (en) * 2006-08-04 2007-09-04 Novellus Systems, Inc. Methods for monitoring a chemical mechanical planarization process of a metal layer using an in-situ eddy current measuring system

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Publication number Priority date Publication date Assignee Title
US6707540B1 (en) * 1999-12-23 2004-03-16 Kla-Tencor Corporation In-situ metalization monitoring using eddy current and optical measurements
KR100718737B1 (ko) * 2000-01-17 2007-05-15 가부시키가이샤 에바라 세이사꾸쇼 폴리싱 장치
EP1143222A3 (fr) * 2000-04-06 2002-01-02 Applied Materials, Inc. Procédé et appareil pour mesurer l'épaisseur de couches à l'oxyde de cuivre
US6924641B1 (en) * 2000-05-19 2005-08-02 Applied Materials, Inc. Method and apparatus for monitoring a metal layer during chemical mechanical polishing
US6966816B2 (en) * 2001-05-02 2005-11-22 Applied Materials, Inc. Integrated endpoint detection system with optical and eddy current monitoring
US6811466B1 (en) * 2001-12-28 2004-11-02 Applied Materials, Inc. System and method for in-line metal profile measurement
US6937915B1 (en) * 2002-03-28 2005-08-30 Lam Research Corporation Apparatus and methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control
US6929531B2 (en) * 2002-09-19 2005-08-16 Lam Research Corporation System and method for metal residue detection and mapping within a multi-step sequence
JP2005011977A (ja) * 2003-06-18 2005-01-13 Ebara Corp 基板研磨装置および基板研磨方法
WO2005004218A1 (fr) * 2003-07-02 2005-01-13 Ebara Corporation Appareil de polissage et procede de polissage
US7074109B1 (en) * 2003-08-18 2006-07-11 Applied Materials Chemical mechanical polishing control system and method
US7097537B1 (en) * 2003-08-18 2006-08-29 Applied Materials, Inc. Determination of position of sensor measurements during polishing
US7153185B1 (en) * 2003-08-18 2006-12-26 Applied Materials, Inc. Substrate edge detection
US6991516B1 (en) * 2003-08-18 2006-01-31 Applied Materials Inc. Chemical mechanical polishing with multi-stage monitoring of metal clearing
JP4451111B2 (ja) * 2003-10-20 2010-04-14 株式会社荏原製作所 渦電流センサ
JP2005203729A (ja) * 2003-12-19 2005-07-28 Ebara Corp 基板研磨装置
US20060043071A1 (en) * 2004-09-02 2006-03-02 Liang-Lun Lee System and method for process control using in-situ thickness measurement
US7554199B2 (en) * 2005-11-22 2009-06-30 Consortium For Advanced Semiconductor Materials And Related Technologies Substrate for evaluation
JP5283506B2 (ja) * 2006-09-12 2013-09-04 株式会社荏原製作所 研磨装置および研磨方法
JP5080933B2 (ja) * 2007-10-18 2012-11-21 株式会社荏原製作所 研磨監視方法および研磨装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5343146A (en) * 1992-10-05 1994-08-30 De Felsko Corporation Combination coating thickness gauge using a magnetic flux density sensor and an eddy current search coil
US20020055192A1 (en) * 2000-07-27 2002-05-09 Redeker Fred C. Chemical mechanical polishing of a metal layer with polishing rate monitoring
US20060021974A1 (en) * 2004-01-29 2006-02-02 Applied Materials, Inc. Method and composition for polishing a substrate
US7264537B1 (en) * 2006-08-04 2007-09-04 Novellus Systems, Inc. Methods for monitoring a chemical mechanical planarization process of a metal layer using an in-situ eddy current measuring system

Also Published As

Publication number Publication date
KR20140028036A (ko) 2014-03-07
JP2014513435A (ja) 2014-05-29
US20120276817A1 (en) 2012-11-01
WO2012148862A2 (fr) 2012-11-01
TW201249592A (en) 2012-12-16

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