WO2012168059A2 - Ensemble de deux éléments semiconducteurs ou plus - Google Patents

Ensemble de deux éléments semiconducteurs ou plus Download PDF

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Publication number
WO2012168059A2
WO2012168059A2 PCT/EP2012/059390 EP2012059390W WO2012168059A2 WO 2012168059 A2 WO2012168059 A2 WO 2012168059A2 EP 2012059390 W EP2012059390 W EP 2012059390W WO 2012168059 A2 WO2012168059 A2 WO 2012168059A2
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
flat side
semiconductor substrate
contact sides
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2012/059390
Other languages
German (de)
English (en)
Other versions
WO2012168059A3 (fr
Inventor
Harry Hedler
Meinrad Schienle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of WO2012168059A2 publication Critical patent/WO2012168059A2/fr
Publication of WO2012168059A3 publication Critical patent/WO2012168059A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area

Definitions

  • flat side in principle also includes a side with a corrugated surface.
  • the flat side may also be subject to second or higher order shape deviations.
  • first of all the semiconductor components are formed on the semiconductor substrate and subsequently the isolation regions are formed on the semiconductor substrate.
  • the first contact sides of the semiconductor components are each connected via microvia passing through the semiconductor substrate, that is to say metallically filled through holes of the semiconductor substrate, which extend from the first to the second flat side of the semiconductor substrate.
  • Fig. 3 shows a single pixel of the array of avalanche photodiodes acc. 1 with an insulation region in a plan view
  • Fig. 4 the array of avalanche photodiodes acc. 1 in each case in different illustrations after a production step of a production method according to the invention schematically in cross section,
  • a one-piece silicon substrate 15 with a first flat side 20 is used.
  • first blind holes 70 are introduced, which extend with their longest extent perpendicular to the first flat side 20 in the silicon substrate 15 stretch (Fig. A).
  • the depth of the blind holes 70 corresponds to the desired final thickness of the finished manufactured array 5 of photodiodes 10.
  • the blind holes 70 surrounding regions of the silicon substrate 15 are oxidized by thermal oxidation to silicon dioxide layers 74.
  • This method step is suitably carried out in the exemplary embodiment shown in FIG. 4 at the beginning of the production method according to the invention, since this is a high-temperature method step.
  • insulating regions 65 are introduced into the semiconductor substrate 15. The formation of the avalanche photodiodes 10 is provided between these isolation regions 65.
  • the first contact sides 25 of the avalanche photodiodes 10 are produced.
  • the p-electrodes 30 are formed on the first flat side 20 of the silicon substrate 15.
  • the detailed method steps for forming the p-electrodes 30 are known per se and comprise a p-doping of the silicon substrate 15.
  • an annular p-well is introduced into the silicon substrate 15.
  • the isolation regions 65 extend over the entire extension of the silicon substrate 15 between the two flat sides 20 and 50 of the silicon substrate 15 and act in an insulating manner between the region provided for the semiconductor components to be formed over the entire extent of the silicon substrate 15.
  • the through holes and thus also large volume fractions of the isolation regions 65 are opaque to light in both the visible and in the ultraviolet and infrared spectral ranges. Optical crosstalk of the avalanche photodiodes 10 in later applications of the array 5 is thus effectively avoided.
  • the micro-vias are connected to metal contacts 80 on the second flat side 50 of the silicon substrate 15 and form back contacts of the p-electrodes 30 of the avalanche photodiodes 10 formed on the first flat side 20 of the silicon substrate 15.
  • the metal contacts 80 can now be made individually by this provided circuits 90 (shown by way of example in Fig. E in Fig. 4) are connected.
  • the individual method steps described above can also be carried out in a different order. In this case, for example, as shown in FIG. 6 (FIG. A), the p-electrodes 30 of the avalanche photodiodes 10 are first formed on the first flat side 20 of the silicon substrate 15 and provided with metal contacts 45.

Landscapes

  • Light Receiving Elements (AREA)
  • Die Bonding (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un ensemble de deux éléments semiconducteurs ou plus comportant chacun des premières et des deuxièmes faces de contact opposées, procédé consistant à utiliser un substrat semi-conducteur présentant une première face plane. Les éléments semiconducteurs sont formés sur le substrat semi-conducteur de telle sorte que les premières faces de contact sont formées sur la première face plane du substrat semi-conducteur et les deuxièmes faces de contact sont formées sur le substrat semi-conducteur loin de la première face plane.
PCT/EP2012/059390 2011-06-10 2012-05-21 Ensemble de deux éléments semiconducteurs ou plus Ceased WO2012168059A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011077383A DE102011077383A1 (de) 2011-06-10 2011-06-10 Anordnung von zwei oder mehr Halbleiterbauelementen
DE102011077383.5 2011-06-10

Publications (2)

Publication Number Publication Date
WO2012168059A2 true WO2012168059A2 (fr) 2012-12-13
WO2012168059A3 WO2012168059A3 (fr) 2013-03-21

Family

ID=46208457

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/059390 Ceased WO2012168059A2 (fr) 2011-06-10 2012-05-21 Ensemble de deux éléments semiconducteurs ou plus

Country Status (2)

Country Link
DE (1) DE102011077383A1 (fr)
WO (1) WO2012168059A2 (fr)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2109930A1 (de) * 1971-03-02 1972-09-07 Siemens Ag Verfahren zur Herstellung eines strahlungsempfindlichen Halbleiterbau elementes
DE3444104A1 (de) * 1984-12-04 1986-06-05 Alvaro Dr. 6380 Bad Homburg Affonso Vorrichtung zum messen/speichern/koppeln lichtenergie
FI20055057A7 (fi) * 2004-05-11 2005-11-12 Artto Aurola Puolijohdelaite
KR20080074084A (ko) * 2005-06-10 2008-08-12 엠플리피케이션 테크놀러지스 인코포레이티드 고감도, 고해상도 검출기 디바이스 및 어레이
FI20051236A0 (fi) * 2005-12-01 2005-12-01 Artto Mikael Aurola Puolijohde apparaatti
US7462874B1 (en) * 2006-04-13 2008-12-09 National Semiconductor Corporation Silicon-based light-emitting structure
DE102007016932A1 (de) * 2007-04-05 2008-12-11 Technomedica Ag Festkörper-Strahlungsquelle, ihre Herstellung und Verwendung
WO2009103048A1 (fr) * 2008-02-14 2009-08-20 Quantum Semiconductor Llc Pixels cmos de photodiode double
US8395685B2 (en) * 2008-07-07 2013-03-12 The Charles Stark Draper Laboratory, Inc. Wide dynamic range imaging sensor and method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None

Also Published As

Publication number Publication date
WO2012168059A3 (fr) 2013-03-21
DE102011077383A1 (de) 2012-12-13

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