WO2012168059A3 - Anordnung von zwei oder mehr halbleiterbauelementen - Google Patents

Anordnung von zwei oder mehr halbleiterbauelementen Download PDF

Info

Publication number
WO2012168059A3
WO2012168059A3 PCT/EP2012/059390 EP2012059390W WO2012168059A3 WO 2012168059 A3 WO2012168059 A3 WO 2012168059A3 EP 2012059390 W EP2012059390 W EP 2012059390W WO 2012168059 A3 WO2012168059 A3 WO 2012168059A3
Authority
WO
WIPO (PCT)
Prior art keywords
arrangement
semiconductor components
semiconductor substrate
contact faces
planar face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2012/059390
Other languages
English (en)
French (fr)
Other versions
WO2012168059A2 (de
Inventor
Harry Hedler
Meinrad Schienle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of WO2012168059A2 publication Critical patent/WO2012168059A2/de
Publication of WO2012168059A3 publication Critical patent/WO2012168059A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area

Landscapes

  • Light Receiving Elements (AREA)
  • Die Bonding (AREA)
  • Led Device Packages (AREA)

Abstract

Bei dem Verfahren zur Herstellung einer Anordnung von zwei oder mehr Halbleiterbauelementen mit je einander abgewandten ersten (25) und zweiten Kontaktseiten (55), wird ein Halbleitersubstrat mit einer ersten Flachseite (20) herangezogen. Dabei werden die Halbleiterbauelemente derart an dem Halbleitersubstrat (15) ausgebildet, dass die ersten Kontaktseiten an der ersten Flachseite des Halbleitersubstrats und die zweiten Kontaktseiten fern der ersten Flachseite an dem Halbleitersubstrat ausgebildet werden.
PCT/EP2012/059390 2011-06-10 2012-05-21 Anordnung von zwei oder mehr halbleiterbauelementen Ceased WO2012168059A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011077383A DE102011077383A1 (de) 2011-06-10 2011-06-10 Anordnung von zwei oder mehr Halbleiterbauelementen
DE102011077383.5 2011-06-10

Publications (2)

Publication Number Publication Date
WO2012168059A2 WO2012168059A2 (de) 2012-12-13
WO2012168059A3 true WO2012168059A3 (de) 2013-03-21

Family

ID=46208457

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/059390 Ceased WO2012168059A2 (de) 2011-06-10 2012-05-21 Anordnung von zwei oder mehr halbleiterbauelementen

Country Status (2)

Country Link
DE (1) DE102011077383A1 (de)
WO (1) WO2012168059A2 (de)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2109930A1 (de) * 1971-03-02 1972-09-07 Siemens Ag Verfahren zur Herstellung eines strahlungsempfindlichen Halbleiterbau elementes
WO2005109510A1 (en) * 2004-05-11 2005-11-17 Artto Aurola Semiconductor device
WO2006135683A2 (en) * 2005-06-10 2006-12-21 Amplification Technologies, Inc. High sensitivity, high resolution detector devices and arrays
WO2007063192A1 (en) * 2005-12-01 2007-06-07 Artto Aurola Semiconductor apparatus
WO2009103048A1 (en) * 2008-02-14 2009-08-20 Quantum Semiconductor Llc Dual photo-diode cmos pixels
US20100002106A1 (en) * 2008-07-07 2010-01-07 The Charles Stark Drapper Laboratory, Inc. Wide dynamic range imaging sensor and method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3444104A1 (de) * 1984-12-04 1986-06-05 Alvaro Dr. 6380 Bad Homburg Affonso Vorrichtung zum messen/speichern/koppeln lichtenergie
US7462874B1 (en) * 2006-04-13 2008-12-09 National Semiconductor Corporation Silicon-based light-emitting structure
DE102007016932A1 (de) * 2007-04-05 2008-12-11 Technomedica Ag Festkörper-Strahlungsquelle, ihre Herstellung und Verwendung

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2109930A1 (de) * 1971-03-02 1972-09-07 Siemens Ag Verfahren zur Herstellung eines strahlungsempfindlichen Halbleiterbau elementes
WO2005109510A1 (en) * 2004-05-11 2005-11-17 Artto Aurola Semiconductor device
WO2006135683A2 (en) * 2005-06-10 2006-12-21 Amplification Technologies, Inc. High sensitivity, high resolution detector devices and arrays
WO2007063192A1 (en) * 2005-12-01 2007-06-07 Artto Aurola Semiconductor apparatus
WO2009103048A1 (en) * 2008-02-14 2009-08-20 Quantum Semiconductor Llc Dual photo-diode cmos pixels
US20100002106A1 (en) * 2008-07-07 2010-01-07 The Charles Stark Drapper Laboratory, Inc. Wide dynamic range imaging sensor and method

Also Published As

Publication number Publication date
WO2012168059A2 (de) 2012-12-13
DE102011077383A1 (de) 2012-12-13

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