WO2012169801A3 - Appareil permettant la fabrication d'un lingot - Google Patents

Appareil permettant la fabrication d'un lingot Download PDF

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Publication number
WO2012169801A3
WO2012169801A3 PCT/KR2012/004499 KR2012004499W WO2012169801A3 WO 2012169801 A3 WO2012169801 A3 WO 2012169801A3 KR 2012004499 W KR2012004499 W KR 2012004499W WO 2012169801 A3 WO2012169801 A3 WO 2012169801A3
Authority
WO
WIPO (PCT)
Prior art keywords
fabricating ingot
top cover
fabricating
ingot
compensative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/004499
Other languages
English (en)
Other versions
WO2012169801A2 (fr
Inventor
Chang Hyun Son
Bum Sup Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Priority to US14/124,976 priority Critical patent/US20140182516A1/en
Publication of WO2012169801A2 publication Critical patent/WO2012169801A2/fr
Publication of WO2012169801A3 publication Critical patent/WO2012169801A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Treatment Of Fiber Materials (AREA)

Abstract

La présente invention se rapporte à un appareil permettant la fabrication d'un lingot, ledit appareil comprenant un creuset destiné à recevoir un matériau, un couvercle supérieur qui entoure la circonférence de la partie de compensation de différence de température, ainsi qu'un isolant thermique qui doit être disposé sur le couvercle supérieur.
PCT/KR2012/004499 2011-06-07 2012-06-07 Appareil permettant la fabrication d'un lingot Ceased WO2012169801A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/124,976 US20140182516A1 (en) 2011-06-07 2012-06-07 Apparatus for fabricating ingot

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0054622 2011-06-07
KR1020110054622A KR20120135735A (ko) 2011-06-07 2011-06-07 잉곳 제조 장치

Publications (2)

Publication Number Publication Date
WO2012169801A2 WO2012169801A2 (fr) 2012-12-13
WO2012169801A3 true WO2012169801A3 (fr) 2013-04-04

Family

ID=47296602

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/004499 Ceased WO2012169801A2 (fr) 2011-06-07 2012-06-07 Appareil permettant la fabrication d'un lingot

Country Status (3)

Country Link
US (1) US20140182516A1 (fr)
KR (1) KR20120135735A (fr)
WO (1) WO2012169801A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120128506A (ko) * 2011-05-17 2012-11-27 엘지이노텍 주식회사 종자정 부착 장치
JP2015013762A (ja) 2013-07-03 2015-01-22 住友電気工業株式会社 炭化珪素単結晶の製造方法および炭化珪素単結晶基板
TWI516648B (zh) * 2014-06-16 2016-01-11 台聚光電股份有限公司 使用多片晶種來生長碳化矽單晶之製造裝置
TW201807272A (zh) * 2016-08-26 2018-03-01 國家中山科學研究院 一種用於成長單晶晶體之裝置
CN106222739A (zh) * 2016-09-13 2016-12-14 山东省科学院能源研究所 一种改善物理气相传输法晶体生长炉温度场分布的装置
CN106637410B (zh) * 2016-12-30 2019-03-26 珠海鼎泰芯源晶体有限公司 坩埚装置
DE102020117661A1 (de) * 2020-07-03 2022-01-20 Friedrich-Alexander-Universität Erlangen-Nürnberg Kristallzüchtungsanlage zur Herstellung eines Einkristalls

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020088391A1 (en) * 1999-07-07 2002-07-11 Harald Kuhn Seed crystal holder with lateral mount for an SiC seed crystal
US20070240630A1 (en) * 2002-06-24 2007-10-18 Leonard Robert T One hundred millimeter single crystal silicon carbide water
US20090053125A1 (en) * 2007-08-20 2009-02-26 Il-Vi Incorporated Stabilizing 4H Polytype During Sublimation Growth Of SiC Single Crystals

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001245270A1 (en) * 2000-02-15 2001-09-03 The Fox Group, Inc. Method and apparatus for growing low defect density silicon carbide and resulting material
JP4275308B2 (ja) * 2000-12-28 2009-06-10 株式会社デンソー 炭化珪素単結晶の製造方法およびその製造装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020088391A1 (en) * 1999-07-07 2002-07-11 Harald Kuhn Seed crystal holder with lateral mount for an SiC seed crystal
US20070240630A1 (en) * 2002-06-24 2007-10-18 Leonard Robert T One hundred millimeter single crystal silicon carbide water
US20090053125A1 (en) * 2007-08-20 2009-02-26 Il-Vi Incorporated Stabilizing 4H Polytype During Sublimation Growth Of SiC Single Crystals

Also Published As

Publication number Publication date
US20140182516A1 (en) 2014-07-03
KR20120135735A (ko) 2012-12-17
WO2012169801A2 (fr) 2012-12-13

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