WO2012175315A1 - Dispositif permettant la génération d'un aérosol et le dépôt d'une couche électroluminescente - Google Patents

Dispositif permettant la génération d'un aérosol et le dépôt d'une couche électroluminescente Download PDF

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Publication number
WO2012175315A1
WO2012175315A1 PCT/EP2012/060413 EP2012060413W WO2012175315A1 WO 2012175315 A1 WO2012175315 A1 WO 2012175315A1 EP 2012060413 W EP2012060413 W EP 2012060413W WO 2012175315 A1 WO2012175315 A1 WO 2012175315A1
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WO
WIPO (PCT)
Prior art keywords
carrier gas
line
aerosol
powder
particular according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2012/060413
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German (de)
English (en)
Inventor
Michael Long
Markus Gersdorff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of WO2012175315A1 publication Critical patent/WO2012175315A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/14—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas designed for spraying particulate materials
    • B05B7/1404—Arrangements for supplying particulate material
    • B05B7/144—Arrangements for supplying particulate material the means for supplying particulate material comprising moving mechanical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles

Definitions

  • the invention relates to a device comprising a reservoir for receiving a powder and with a screw conveyor to promote a metered amount of the powder from the reservoir to a feed point at which feed point, the powder passes into a carrier gas stream to as suspended particles in the carrier gas flow through an aerosol line to be transported.
  • a device of this kind is described by US 6,037,241.
  • a funnel-shaped reservoir is filled with an organic powder.
  • a screw conveyor which is driven by a motor to feed metered amounts of the powder at a feed point in a carrier gas line through which a carrier flows gas flow.
  • the powder particles form an aerosol in the carrier gas stream, which is transported by an aerosol line into an evaporator.
  • the evaporator is formed by a container whose walls are formed by an open-cell foam body which is heated by passing electrical current, so that heat is transferred to the aerosol particles coming into contact with the cell walls, resulting in their evaporation.
  • Carrier gas and steam are passed via a vapor line into a process chamber of a CVD reactor, where the vapor condenses on the surface of a substrate, forming a light-emitting layer.
  • US Pat. No. 7,501,152 B2 describes a device which has a reservoir which has an opening on its underside, which opens into a bearing tube in which a screw conveyor is mounted, with which a feed screw is mounted in the container. Rateten powder metered to an evaporator can be transported.
  • the powder used is an organic precursor which is vaporized to condense on a substrate as a light-emitting layer.
  • US 2009/0039175 AI also describes an evaporator, which is supplied via a screw conveyor powdered organic material, with which OLED structures can be deposited on a substrate.
  • US 2006/0177576 A1, US 2006/0177578 A1, US 2009/0081365 A1, US Pat. No. 6,037,241 A and EP 0 585 848 A1 describe conveyors which have a screw conveyor with a solid axis.
  • DE 19 638 100 C1 describes a CVD reactor with storage containers for solid parts, which are constantly kept in motion by means of a drive. At the reservoirs, a tube is fixed, which is rotationally driven and is traversed by a carrier gas.
  • the invention has for its object to technically improve the aerosol generator mentioned above.
  • the screw conveyor has an axial flow channel through which flows the carrier gas stream. This improves the functionality of the aerosol generator in an evaporation device.
  • the powder particles conveyed by the screw are conveyed at the end of the screw via a suitable shaping of the end of the screw. gerhöhlung the worm transported radially inwardly and fed directly into the emerging from the end of the screw conveyor carrier gas stream.
  • the flow channel runs in the axis of rotation of the screw.
  • the powder particles are transported as suspended particles in an aerosol line from the carrier gas to an evaporator, in which the suspended particles evaporate by supplying heat to a vapor.
  • the enriched with the vapor of the vaporized organic starting material carrier gas stream is fed through a vapor line to a CVD reactor.
  • This has a gas distributor in the form of a shower head with arranged on its underside Gasaustritts- surface, which has a plurality of sieve-like arranged gas outlet openings.
  • the carrier gas stream enriched with the steam passes through this gas distributor and the gas outlet openings into a process chamber arranged below the gas distributor, the bottom of which is formed by a susceptor carrying a substrate to be coated, for example of glass, which is cooled to a temperature by coolant of the susceptor is cooled, wherein the vapor condenses on the surface of the substrate.
  • the feeding of the aerosol, which is formed directly at the end of the screw conveyor, into the aerosol line can take place in a second carrier gas flow flowing transversely to the screw.
  • the aerosol line is aligned with the flow channel.
  • a second carrier gas can flow into the aerosol line at the feed point. While the first carrier gas flows out of the center of a rotationally symmetrical feed arrangement, the second carrier gas can be fed from a radially outer nozzle arrangement.
  • the carrier gas feed line for the first carrier gas may comprise a valve which is alternately opened and closed so that carrier gas pulses flow through the flow channel of the feed screw.
  • the second carrier gas can also be supplied pulsed.
  • the valve is preferably a switching valve, which directs the carrier gas flow either into the flow channel or into a vent line.
  • the carrier gas stream is preferably metered. This is done with a mass flow controller.
  • the storage container may have an agitator, as described for example in US Pat. No. 7,501,152 B2.
  • the agitator can be driven by the same motor that also turns the worm.
  • the agitator is a helically bent wire that is rotated about the axis of the helix.
  • the container has a rotational symmetry. The axis of the agitator runs parallel to the axis of the spindle.
  • FIG. 1 shows schematically the device according to the invention
  • FIG. 2 shows an enlarged detail according to the dot-dash line II - II in FIG. 1,
  • FIG. 4 shows a representation of the conveying device shown in FIG. 3 with broken conveying screw bearing
  • FIG. 5 shows a plan view of a conveying device according to FIGS. 3 and 4 with a cut-open tube into which particles conveyed by the conveying device are injected, a section according to the line VI - VI in FIG. 5, 7 shows the conveying device of FIGS. 3 and 4 in another application example, in which the powder particles conveyed by the conveying device are fed axially into an aerosol line 15,
  • Fig. 8 is a section along the line VIII - VIII in Figure 7 and
  • Fig. 9 shows another application example of the conveyor device shown in Figures 3 and 4, wherein also axially fed into an aerosol line 15.
  • FIG. 1 schematically shows a device for depositing OLED layers on a substrate 20.
  • the CVD reactor 3 used for this purpose is shown in greatly reduced form in FIG.
  • a gas distributor 18 in the form of a shower head, which has on its underside a plurality of gas outlet openings facing a process chamber 19 whose bottom is formed by a susceptor 21 which is cooled and on the surface of which the substrate to be coated 20 lies.
  • a vacuum pump 22 With a vacuum pump 22, the total pressure within the process chamber 19 can be set in a wide range. Usually, total pressures between 1 and 100 mbar are used.
  • the gas distributor 18 is supplied via a steam supply line 17 with a process gas. It is a transported by a carrier gas vapor of an organic starting material, which condenses on the substrate 20 as a thin layer.
  • an aerosol is initially produced in an aerosol generator 1 from a pulverulent organic starting material 5 and a carrier gas stream 25, which is brought by an aerosol line 15 into an evaporator 2 where the suspended particles transported by the carrier gas stream 25 are vaporized.
  • the evaporator 2 has an evaporation body 16, which is heated.
  • the evaporation body is preferably an open-cell structure. It can be an open-celled, solid-state foam.
  • the walls of the cells form curvilinear channels.
  • the channel walls form evaporation surfaces.
  • evaporation energy is supplied to the suspended particles, so that they evaporate and are transported as vapor from the carrier gas stream 25 through the steam line 17 to the CVD reactor 3.
  • the carrier gas stream 25 is metered by a mass flow controller 27.
  • the thus-metered carrier gas stream 25 can be conducted by means of a switching valve 26 either into a carrier gas feed line 12 or into a vent line 28. By rapid switching, the carrier gas feed line 12 can be traversed by the carrier gas 25 in a pulse shape.
  • the carrier gas feed line 12 opens into a flow channel 10, which runs in the axis of a screw conveyor 8.
  • the screw conveyor 8 has on its outer circumferential wall one or more helically arranged conveyor ribs. By rotating the conveyor screw 8 by means of a drive device 11, a powdered organic starting material 5 stored in the storage container 4 is conveyed to the end of the screw conveyor 8, where the mouth 14 of the flow channel 10 is located.
  • a motor 7 agitator 6 Within the storage container 4 is a driven by a motor 7 agitator 6, which ensures a uniform filling of the screw conveyor 8.
  • the conveyor screw 8 By turning the conveyor screw 8, the powder conveyed between the helical webs 24 in a conveying channel 23 is transported to a feed point 13.
  • the screw conveyor 8 rotates in a bearing tube 9, the end of which is funnel-shaped, so that through a gap between the end face and the funnel-shaped end 9 ', the powder is conveyed in front of the mouth 14 of the flow channel 10.
  • screw conveyor 8 and agitator 6 are driven by a common motor 7, wherein the mutually parallel shafts of the agitator 6 and screw conveyor 8 are connected to each other with gears.
  • a wire coil which forms the agitator 6 rotates.
  • the end 33 of the bearing tube 9 is formed by a nozzle, whose end face the funnel 9 'is formed. This nozzle is intended to be inserted into an opening of a pipe.
  • the nozzle 33 is inserted in a shell opening of a tube through which a second carrier gas stream 29 flows. Upstream of the feed point 13, the tube thus forms a carrier gas feed line 30 for the second carrier gas 29. Downstream of the feed point 13, the tube forms the aerosol line 15. At the feed
  • the powder conveyed by the screw conveyor 8 is fed by means of the first carrier gas stream 25 passing through the flow channel 10.
  • the feed of the aerosol from the front side takes place in the aerosol line 15.
  • the nozzle 33 is inserted in a nozzle head 31, with which a second carrier gas stream 29 can be fed into the aerosol line 15. This is done by a feed zone surrounding the nozzle 33 for the second carrier gas 29, which forms a plurality of openings 32 through which the second carrier gas 29, which is fed into the nozzle head 31 by means of a carrier gas feed line 30, flows into the aerosol line 15.
  • the embodiment shown in FIG. 9 does not use a second carrier gas.
  • the pipe end of the aerosol line 15 is attached directly to the nozzle 33.
  • the carrier gas flowing through the carrier 10 arranged in the axis of rotation of the screw conveyor 8 carrier carrier 25 takes at the mouth 14 of the flow channel 10 from the outside radially to the center of rotation funded powder particles and transported as suspended particles to the evaporator. 2

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Dispositif comportant un réservoir (4) destiné à contenir une poudre (5) et une vis sans fin (8) destinée à transporter une quantité dosée de la poudre (5) du réservoir (4) jusqu'à un site d'alimentation (13) au niveau duquel la poudre (5) parvient dans un courant de gaz vecteur (25) pour être acheminée sous forme de particules en suspension dans le courant de gaz vecteur (25) dans une conduite à aérosol (15). L'objet de la présente invention est de perfectionner techniquement ledit générateur d'aérosol. A cet effet, la vis sans fin (8) comporte un canal d'écoulement (10) axial dans lequel circule le gaz porteur (25).
PCT/EP2012/060413 2011-06-22 2012-06-01 Dispositif permettant la génération d'un aérosol et le dépôt d'une couche électroluminescente Ceased WO2012175315A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011051263.2 2011-06-22
DE102011051263.2A DE102011051263B4 (de) 2011-06-22 2011-06-22 Vorrichtung zur Aerosolerzeugung und Abscheiden einer lichtemittierenden Schicht

Publications (1)

Publication Number Publication Date
WO2012175315A1 true WO2012175315A1 (fr) 2012-12-27

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PCT/EP2012/060413 Ceased WO2012175315A1 (fr) 2011-06-22 2012-06-01 Dispositif permettant la génération d'un aérosol et le dépôt d'une couche électroluminescente

Country Status (3)

Country Link
DE (1) DE102011051263B4 (fr)
TW (1) TW201305377A (fr)
WO (1) WO2012175315A1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013106863A1 (de) 2013-07-01 2015-01-08 Aixtron Se Vorrichtung zum Bestimmen des Massenflusses eines in einem Trägergas transportierten Dampfs
DE102014101792A1 (de) 2014-02-13 2015-08-13 Aixtron Se Vorrichtung zum Bestimmen des Massenflusses eines Gases beziehungsweise Gasgemisches mit ineinandergeschachtelten rohrförmigen Filamentanordnungen
KR102369676B1 (ko) 2017-04-10 2022-03-04 삼성디스플레이 주식회사 표시 장치의 제조장치 및 표시 장치의 제조방법
DE102017112668A1 (de) * 2017-06-08 2018-12-13 Aixtron Se Verfahren zum Abscheiden von OLEDs
DE102017119565A1 (de) 2017-08-25 2019-02-28 Aixtron Se Vorrichtung und Verfahren zum Fördern eines Pulvers, insbesondere als Komponente einer Beschichtungseinrichtung
DE102018133068B4 (de) 2018-12-20 2020-10-22 gemeinnützige KIMW Forschungs-GmbH Dosiervorrichtung zum Dosieren eines pulverförmigen Stoffes
DE202018107303U1 (de) 2018-12-20 2019-01-14 gemeinnützige KIMW Forschungs-GmbH Dosiervorrichtung zum Dosieren eines pulverförmigen Stoffes sowie CVD-Anlage mit einer solchen Dosiervorrichtung
CN114040808B (zh) * 2019-03-13 2023-03-24 梅托克斯技术公司 用于薄膜沉积的固体前体进料系统
WO2021223844A1 (fr) * 2020-05-05 2021-11-11 gemeinnützige KIMW Forschungs-GmbH Appareil de dépôt en phase vapeur d'une substance sur un substrat
CN113457479B (zh) * 2021-07-22 2022-09-23 上海交通大学 定量浓度持续稳定的粉尘气溶胶发生系统

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE497689C (de) * 1930-05-12 Fritz Kirchner Vorrichtung zum Schleudern von koernigem Gut mittels eines Druckmittelstrahles
EP0585848A1 (fr) 1992-09-02 1994-03-09 Hoechst Aktiengesellschaft Procédé et dispositif de formation des films minces par dépôt chimique en phase vapeur
JPH06310444A (ja) * 1993-04-27 1994-11-04 Ryoden Semiconductor Syst Eng Kk 液体原料用ｃｖｄ装置
DE19638100C1 (de) 1996-09-18 1998-03-05 Fraunhofer Ges Forschung Vorrichtung zum Erzeugen eines dampfförmigen Reaktionsproduktes aus Feststoffteilen
DE29813915U1 (de) * 1998-07-24 1998-10-08 Dieter Sojak Silo-Dosieranlagen GmbH, 23879 Mölln Zufuhrsystem für das dosierte Einbringen von pulvrigen Stoffen in einen Gasstrom
US6037241A (en) 1998-02-19 2000-03-14 First Solar, Llc Apparatus and method for depositing a semiconductor material
WO2001061071A2 (fr) * 2000-02-16 2001-08-23 Aixtron Ag Procede de production de revetement par condensation
EP1331443A1 (fr) * 2002-01-23 2003-07-30 Schwäbische Hüttenwerke GmbH Dispositif pour introduire de combustibles secondaires dans un incinérateur
US20060177578A1 (en) 2005-02-04 2006-08-10 Eastman Kodak Company Feeding particulate material to a heated surface
US20060177576A1 (en) 2005-02-04 2006-08-10 Eastman Kodak Company Controllably feeding organic material in making OLEDs
US20090039175A1 (en) 2007-08-06 2009-02-12 Michael Long Vaporization of thermally sensitive materials
US7501152B2 (en) 2004-09-21 2009-03-10 Eastman Kodak Company Delivering particulate material to a vaporization zone
US20090081365A1 (en) 2007-09-20 2009-03-26 Cok Ronald S Deposition apparatus for temperature sensitive materials
WO2010121451A1 (fr) * 2009-04-23 2010-10-28 浙江嘉远格隆能源股份有限公司 Procede et appareil de depôt-formation de film semiconducteur sur un substrat par la mise en oeuvre d'une technologie de sublimation en espace clos

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE497689C (de) * 1930-05-12 Fritz Kirchner Vorrichtung zum Schleudern von koernigem Gut mittels eines Druckmittelstrahles
EP0585848A1 (fr) 1992-09-02 1994-03-09 Hoechst Aktiengesellschaft Procédé et dispositif de formation des films minces par dépôt chimique en phase vapeur
JPH06310444A (ja) * 1993-04-27 1994-11-04 Ryoden Semiconductor Syst Eng Kk 液体原料用ｃｖｄ装置
DE19638100C1 (de) 1996-09-18 1998-03-05 Fraunhofer Ges Forschung Vorrichtung zum Erzeugen eines dampfförmigen Reaktionsproduktes aus Feststoffteilen
US6037241A (en) 1998-02-19 2000-03-14 First Solar, Llc Apparatus and method for depositing a semiconductor material
DE29813915U1 (de) * 1998-07-24 1998-10-08 Dieter Sojak Silo-Dosieranlagen GmbH, 23879 Mölln Zufuhrsystem für das dosierte Einbringen von pulvrigen Stoffen in einen Gasstrom
WO2001061071A2 (fr) * 2000-02-16 2001-08-23 Aixtron Ag Procede de production de revetement par condensation
EP1331443A1 (fr) * 2002-01-23 2003-07-30 Schwäbische Hüttenwerke GmbH Dispositif pour introduire de combustibles secondaires dans un incinérateur
US7501152B2 (en) 2004-09-21 2009-03-10 Eastman Kodak Company Delivering particulate material to a vaporization zone
US20060177578A1 (en) 2005-02-04 2006-08-10 Eastman Kodak Company Feeding particulate material to a heated surface
US20060177576A1 (en) 2005-02-04 2006-08-10 Eastman Kodak Company Controllably feeding organic material in making OLEDs
US20090039175A1 (en) 2007-08-06 2009-02-12 Michael Long Vaporization of thermally sensitive materials
US20090081365A1 (en) 2007-09-20 2009-03-26 Cok Ronald S Deposition apparatus for temperature sensitive materials
WO2010121451A1 (fr) * 2009-04-23 2010-10-28 浙江嘉远格隆能源股份有限公司 Procede et appareil de depôt-formation de film semiconducteur sur un substrat par la mise en oeuvre d'une technologie de sublimation en espace clos
US20120040516A1 (en) * 2009-04-23 2012-02-16 Xia Shenjiang Method and device for depositing semiconductor film on substrate using close-spaced sublimation process

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Publication number Publication date
TW201305377A (zh) 2013-02-01
DE102011051263A1 (de) 2012-12-27
DE102011051263B4 (de) 2022-08-11

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