WO2013012271A3 - Procédé permettant de préparer une couche d'absorption de lumière destinée à une cellule solaire, cellule solaire incluant la couche d'absorption de lumière et son procédé de fabrication - Google Patents

Procédé permettant de préparer une couche d'absorption de lumière destinée à une cellule solaire, cellule solaire incluant la couche d'absorption de lumière et son procédé de fabrication Download PDF

Info

Publication number
WO2013012271A3
WO2013012271A3 PCT/KR2012/005783 KR2012005783W WO2013012271A3 WO 2013012271 A3 WO2013012271 A3 WO 2013012271A3 KR 2012005783 W KR2012005783 W KR 2012005783W WO 2013012271 A3 WO2013012271 A3 WO 2013012271A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
light absorption
absorption layer
manufacturing
preparing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/005783
Other languages
English (en)
Korean (ko)
Other versions
WO2013012271A2 (fr
Inventor
김태환
추동철
김대훈
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Industry University Cooperation Foundation IUCF HYU
Original Assignee
Industry University Cooperation Foundation IUCF HYU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Industry University Cooperation Foundation IUCF HYU filed Critical Industry University Cooperation Foundation IUCF HYU
Publication of WO2013012271A2 publication Critical patent/WO2013012271A2/fr
Publication of WO2013012271A3 publication Critical patent/WO2013012271A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention a trait à un procédé permettant de préparer une couche d'absorption de lumière destinée à une cellule solaire, à une cellule solaire incluant la couche d'absorption de lumière et à son procédé de fabrication. Le procédé permettant de préparer une couche d'absorption de lumière destinée à une cellule solaire permet d'augmenter l'efficacité de transport des charges se déplaçant vers les électrodes positive et négative au moyen de la réduction de recombinaison d'exciton en formant de façon spontanée des nanoagrégats en raison d'une différence de solubilité d'un matériau d'absorption de lumière dans un bon solvant et un mauvais solvant. De plus, la cellule solaire permet d'améliorer le photocourant et le rendement de conversion photoélectrique en augmentant la zone d'une interface collée entre la couche d'absorption de lumière et une couche de transport d'électron au moyen de la formation d'une structure irrégulière sur la surface de la couche d'absorption de lumière en raison de l'agencement des nanoagrégats. D'autre part, le procédé de fabrication de la cellule solaire permet de simplifier et de faciliter la fabrication d'une cellule solaire à haut rendement de grande taille à l'aide d'un processus de la présente solution.
PCT/KR2012/005783 2011-07-21 2012-07-19 Procédé permettant de préparer une couche d'absorption de lumière destinée à une cellule solaire, cellule solaire incluant la couche d'absorption de lumière et son procédé de fabrication Ceased WO2013012271A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0072687 2011-07-21
KR1020110072687A KR101244112B1 (ko) 2011-07-21 2011-07-21 태양전지용 광흡수층 제조방법, 이를 포함하는 태양전지 및 이의 제조방법

Publications (2)

Publication Number Publication Date
WO2013012271A2 WO2013012271A2 (fr) 2013-01-24
WO2013012271A3 true WO2013012271A3 (fr) 2013-04-04

Family

ID=47558625

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/005783 Ceased WO2013012271A2 (fr) 2011-07-21 2012-07-19 Procédé permettant de préparer une couche d'absorption de lumière destinée à une cellule solaire, cellule solaire incluant la couche d'absorption de lumière et son procédé de fabrication

Country Status (2)

Country Link
KR (1) KR101244112B1 (fr)
WO (1) WO2013012271A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101478448B1 (ko) 2013-07-01 2015-01-02 서울대학교산학협력단 반도체 나노입자를 포함하는 광흡수층의 제작방법 및 이 광흡수층을 포함하는 반도체 소자의 제작방법
EP2937766B1 (fr) * 2013-11-04 2018-07-25 LG Chem, Ltd. Structure conductrice et son procédé de préparation
TWI545595B (zh) 2013-11-20 2016-08-11 Ｌｇ化學股份有限公司 導電結構體及其製造方法
JP6373124B2 (ja) * 2014-08-21 2018-08-15 東京応化工業株式会社 塗布液、太陽電池用光吸収層および太陽電池、ならびにその製造方法
CN104409572B (zh) * 2014-11-24 2017-02-22 新奥光伏能源有限公司 一种异质结太阳能电池的制作方法
KR20160115588A (ko) * 2015-03-27 2016-10-06 주식회사 엘지화학 디스플레이 장치 및 이의 제조방법
EP3597724B1 (fr) 2018-07-17 2020-11-11 Samsung Electronics Co., Ltd. Dispositif électroluminescent et dispositif d'affichage le comprenant
CN116190481B (zh) * 2023-03-01 2024-01-26 中国科学院长春光学精密机械与物理研究所 彩色光伏电池及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100138930A (ko) * 2008-03-25 2010-12-31 스미또모 가가꾸 가부시키가이샤 조성물 및 그것을 이용한 광전 변환 소자
KR20110003812A (ko) * 2009-07-06 2011-01-13 광주과학기술원 모폴로지 컨트롤러를 이용한 유기 태양전지 및 그 제조방법
KR20110007906A (ko) * 2009-07-17 2011-01-25 한국과학기술원 인버티드 투명 유기 태양전지 및 인버티드 투명 유기 태양전지 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200937656A (en) * 2008-02-29 2009-09-01 Univ Nat Chiao Tung An organic active-layer solution for a polymer solar cell and a method for preparing the same
JP2009001575A (ja) * 2008-06-23 2009-01-08 Ozotech:Kk オゾン溶存グリセリン溶液を含む化粧料、医薬部外品、医薬（医薬品）等の外用剤
JP2010016270A (ja) * 2008-07-07 2010-01-21 Fujifilm Corp 波長掃引光源
KR100959760B1 (ko) * 2008-12-18 2010-05-25 재단법인대구경북과학기술원 태양전지 및 그 제조 방법
KR101658534B1 (ko) * 2009-12-15 2016-09-23 엘지디스플레이 주식회사 태양전지 및 그 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100138930A (ko) * 2008-03-25 2010-12-31 스미또모 가가꾸 가부시키가이샤 조성물 및 그것을 이용한 광전 변환 소자
KR20110003812A (ko) * 2009-07-06 2011-01-13 광주과학기술원 모폴로지 컨트롤러를 이용한 유기 태양전지 및 그 제조방법
KR20110007906A (ko) * 2009-07-17 2011-01-25 한국과학기술원 인버티드 투명 유기 태양전지 및 인버티드 투명 유기 태양전지 제조방법

Also Published As

Publication number Publication date
KR20130011503A (ko) 2013-01-30
KR101244112B1 (ko) 2013-03-18
WO2013012271A2 (fr) 2013-01-24

Similar Documents

Publication Publication Date Title
WO2013012271A3 (fr) Procédé permettant de préparer une couche d'absorption de lumière destinée à une cellule solaire, cellule solaire incluant la couche d'absorption de lumière et son procédé de fabrication
WO2011090336A3 (fr) Cellule solaire dont le rendement de conversion est amélioré au moyen de champs électriques renforcés
WO2011090300A3 (fr) Cellule solaire hybride organique/inorganique en tandem contenant divers types de nanoparticules et son procédé de fabrication
WO2011122853A3 (fr) Dispositif photovoltaïque solaire et son procédé de production
WO2011025216A3 (fr) Photodétecteur utilisant une couche mince de graphène et des nanoparticules, et son procédé de production
WO2012115392A3 (fr) Cellule solaire présentant une structure à double face, et procédé de fabrication associé
WO2010132539A3 (fr) Procédés et appareil pour conversion de longueur d'onde dans des cellules solaires et des capots de cellules solaires
WO2012100788A8 (fr) Récepteur concentrateur photovoltaïque et son utilisation
WO2012158615A3 (fr) Concentrateurs de rayonnements luminescents et thermiques de focalisation
WO2010104890A3 (fr) Amélioration du rendement des cellules solaires par gestion de la lumière
WO2011002212A3 (fr) Appareil de génération d'énergie photovoltaïque, et procédé de fabrication afférent
EP2434550A4 (fr) Pile photovoltaïque et procédé de production associé
WO2017197204A3 (fr) Métallisation de rouleau à rouleau des cellules solaires
CN104733554A (zh) 底部具有金属纳米颗粒结构的硅基薄膜太阳能电池
WO2011043609A3 (fr) Appareil photovoltaïque de génération d'électricité et procédé pour sa fabrication
Shariatinia Perovskite solar cells as modern nano tools and devices in solar power energy
WO2010110590A3 (fr) Cellule solaire et son procédé de fabrication
WO2010107261A3 (fr) Cellule solaire et procédé de production de celle-ci
GB201320003D0 (en) Tandem solar cell with improved tunnel junction
WO2012162268A3 (fr) Polarisation de surface avant auto-activée pour une pile solaire
WO2012037115A3 (fr) Cellules solaires à chuchotement en galerie
WO2013012240A3 (fr) Procédé de fabrication d'une couche mince à base de ci(g)s comprenant une couche mince de cu-se au moyen d'un flux de nanoparticules à deux composants à base de cu-se, et couche mince à base de ci(g)s ainsi obtenue
WO2012102476A3 (fr) Appareil à cellule solaire et son procédé de fabrication
WO2012058788A8 (fr) Encre nanocomposite de phtalocyanine/polymère pour l'optoélectronique
WO2013012202A3 (fr) Procédé pour la fabrication d'un film mince à base de ci(g)s utilisant un procédé hybride à partir de nanoparticules à deux composants, et film mince à base de ci(g)s fabriqué par le procédé

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12815450

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12815450

Country of ref document: EP

Kind code of ref document: A2