WO2013015355A1 - Procédé de fabrication d'une carte de circuits imprimés de céramique d'oxyde et carte de circuits imprimés de céramique d'oxyde - Google Patents

Procédé de fabrication d'une carte de circuits imprimés de céramique d'oxyde et carte de circuits imprimés de céramique d'oxyde Download PDF

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Publication number
WO2013015355A1
WO2013015355A1 PCT/JP2012/068957 JP2012068957W WO2013015355A1 WO 2013015355 A1 WO2013015355 A1 WO 2013015355A1 JP 2012068957 W JP2012068957 W JP 2012068957W WO 2013015355 A1 WO2013015355 A1 WO 2013015355A1
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Prior art keywords
oxide
circuit board
copper plate
heating
ceramic circuit
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Ceased
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PCT/JP2012/068957
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English (en)
Japanese (ja)
Inventor
隆之 那波
佐藤　英樹
星野　政則
裕 小森田
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Toshiba Corp
Niterra Materials Co Ltd
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Toshiba Corp
Toshiba Materials Co Ltd
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Priority to JP2013525748A priority Critical patent/JP5908473B2/ja
Priority to CN201280037799.0A priority patent/CN103717552B/zh
Priority to KR1020147001936A priority patent/KR101548091B1/ko
Publication of WO2013015355A1 publication Critical patent/WO2013015355A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
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    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/025—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of glass or ceramic material
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/14—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment
    • F27B9/20—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path
    • F27B9/24—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path being carried by a conveyor
    • F27B9/243—Endless-strand conveyor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • H05K3/202—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using self-supporting metal foil pattern
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/02—Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6562—Heating rate
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    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
    • C04B2235/661—Multi-step sintering
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
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    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
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    • C04B2237/06—Oxidic interlayers
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
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    • C04B2237/343—Alumina or aluminates
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/54—Oxidising the surface before joining
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/86—Joining of two substrates at their largest surfaces, one surface being complete joined and covered, the other surface not, e.g. a small plate joined at it's largest surface on top of a larger plate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass

Definitions

  • the present invention relates to a method for manufacturing an oxide-based ceramic circuit board and an oxide-based ceramic circuit board, and more particularly to an oxide-based ceramic circuit board having excellent heat cycle (TCT) characteristics and a method for manufacturing the same.
  • TCT heat cycle
  • Ceramic substrates used as the base material for ceramic circuit boards include oxide ceramics such as aluminum oxide sintered bodies and mixed sintered bodies of aluminum oxide and zirconium oxide, and nitrides such as aluminum nitride sintered bodies and silicon nitride sintered bodies. Physical ceramics are used. In recent years, high thermal conductivity of nitride ceramics has been promoted. For this reason, nitride ceramic circuit boards are used in products that require high thermal conductivity. On the other hand, oxide-based ceramic substrates are used in products that do not require relatively high thermal conductivity because they are less expensive than nitride-based ceramics.
  • the copper circuit board and the oxide-based ceramic substrate can be bonded by a bonding method called a direct bonding method (DBC).
  • DBC direct bonding method
  • the direct bonding method uses an eutectic composition of oxygen and copper as described in, for example, Japanese Patent Application Laid-Open No. 1-59986 (Patent Document 1) and Japanese Patent Application Laid-Open No. 4-144978 (Patent Document 2). And joining them.
  • an excellent thermal cycle test (TCT test) durability is obtained by removing the oxide layer on the copper plate surface by etching the copper plate surface of the alumina circuit board. .
  • the etching process increases the cost.
  • an alumina circuit board that does not remove the oxide layer on the copper plate surface by performing an etching process has a problem that it is difficult to improve TCT characteristics.
  • the present invention has been made to solve the above problems, and an object thereof is to provide an oxide-based ceramic circuit board having excellent TCT characteristics and bonding strength using a direct bonding method.
  • the method for producing an oxide-based ceramic circuit board according to the present invention includes a step of forming a laminate by placing a copper plate on an oxide-based ceramic substrate, and a step of heating the obtained laminate.
  • the heating step comprises heating the laminate in a first heating region having a maximum heating temperature between 1065 and 1085 ° C.
  • heating the laminated body in the heating region to form a joined body, and thereafter cooling the joined body in the cooling region.
  • the heating step includes placing an oxide-based ceramic substrate on which a copper plate is disposed on a tray, and a belt having a conveyance speed (belt speed) of 70 to 270 mm / min. It is preferable to carry out using a belt furnace that performs each heating step continuously while conveying the tray with a conveyor.
  • the tray is preferably made of a nickel alloy.
  • the copper plate has a circuit structure in which a plurality of circuit elements and a bridge portion connecting the circuit elements are formed by press working, and the bridge portion is removed after joining the copper plate and the oxide-based ceramic substrate. It is preferable. Moreover, it is preferable to form a circuit structure by an etching process after joining the oxide ceramic substrate and the copper plate.
  • the belt furnace preferably includes a nitrogen gas atmosphere in which a ratio A / B of the nitrogen flow rate (A) of the entrance curtain and the nitrogen flow rate (B) of the exit curtain is controlled to be 0.2 or less.
  • the physical ceramic substrate is preferably made of any one of an alumina sintered body and a mixed sintered body of alumina and zirconia.
  • the bonding strength of the copper plate is preferably 9.5 kgf / cm or more.
  • the carbon content in the copper plate is preferably 0.1 to 1.0% by mass.
  • the oxide-based ceramic circuit board of the present invention is an oxide-based ceramic circuit board in which a copper plate and an oxide-based ceramic substrate are bonded by a direct bonding method.
  • the area ratio of copper on the bonding surface side is 60% or less per unit area of 3000 ⁇ m ⁇ 3000 ⁇ m, and the bonding strength of the copper plate is 9.5 kgf / cm or more.
  • the oxide ceramic substrate is preferably made of any one of an alumina sintered body and a mixed sintered body of alumina and zirconia.
  • the oxide-based ceramic circuit board is held at a temperature of ⁇ 40 ° C. for 30 minutes, then at a temperature of 25 ° C. for 10 minutes, then at a temperature of 125 ° C.
  • the oxide ceramic substrate preferably has a density of 3.60 to 3.79 g / cm 3 .
  • the oxide-based ceramic circuit board is held at a temperature of ⁇ 40 ° C. for 30 minutes, then at a temperature of 25 ° C. for 10 minutes, then at a temperature of 125 ° C. for 30 minutes, and then at a temperature of 25 ° C. for 10 minutes.
  • the copper plate After 100 cycles of a heat cycle test (TCT) in which the heating step for 1 minute is one cycle, the copper plate preferably has a bonding strength of 6.5 kgf / cm or more.
  • the copper plate preferably has a thickness of 0.2 to 0.5 mm.
  • the surface roughness Ra of the oxide ceramic substrate is preferably 0.1 to 0.7 ⁇ m.
  • oxygen exists in the crystal grain boundary of the said copper plate.
  • the average crystal grain size of the copper plate is preferably 300 to 800 ⁇ m.
  • the carbon content of the copper plate is preferably 0.1 to 1.0% by mass.
  • the oxide-based ceramic circuit board according to the present invention since the heating process is performed in the predetermined first heating region, second heating region, and third heating region, the eutectic bonding reaction is stabilized. Therefore, the manufacturing yield of the ceramic circuit board can be improved.
  • the oxide-based ceramic circuit board according to the present invention has high bonding strength and can improve TCT characteristics.
  • the method for manufacturing an oxide-based ceramic circuit board includes an oxide ceramic substrate including a step of forming a laminate by placing a copper plate on an oxide-based ceramic substrate and a step of heating the obtained laminate.
  • the heating step includes the step of heating the laminate in a first heating region having a maximum heating temperature between 1065 and 1085 ° C.
  • FIG. 1 shows an example of the configuration of an oxide ceramic circuit board.
  • reference numeral 1 is an oxide ceramic circuit board
  • reference numeral 11 is an oxide ceramic board
  • reference numeral 12 is a copper circuit board (copper board for circuit)
  • reference numeral 13 is a back metal plate (back copper board). It is.
  • the oxide-based ceramic substrate 11 is preferably one of an alumina sintered body and a mixed sintered body of alumina and zirconia.
  • the alumina sintered body may contain 8% by mass or less of a sintering aid such as an Si component, a Ca component, an Mg component, or an Na component.
  • the mixed sintered body of alumina and zirconia is preferably a sintered body of 10 to 90% by mass of zirconia and the remaining alumina. In addition, you may contain 8 mass% or less of sintering adjuvant as needed.
  • the copper plate is preferably a copper plate made of tough pitch electrolytic copper containing 100 to 1000 ppm by mass of oxygen.
  • the method of forming the copper oxide film include a method of directly oxidizing the copper plate by heat treatment, a method of applying a paste of copper oxide powder, and the like. Specifically, it can be formed by performing a surface oxidation treatment in which a copper plate is heated in the atmosphere at a temperature of 150 to 360 ° C. for 20 to 120 seconds.
  • the thickness of the copper oxide film is less than 1 ⁇ m, since the amount of Cu—O eutectic generated is small, there are many unbonded portions between the substrate and the copper circuit board, and the effect of improving the bonding strength is small. .
  • the thickness of the copper oxide layer formed on the copper circuit board surface is preferably in the range of 1 to 10 ⁇ m. For the same reason, the range of 2 to 5 ⁇ m is more desirable.
  • the copper plate preferably contains 0.1 to 1.0% by mass of carbon. Since carbon functions as a deoxidizer, it is possible to obtain an effect of moving oxygen in the copper plate (tough pitch copper or oxygen-free copper) to the copper plate surface. Oxygen that has migrated to the copper plate surface can be used to form a Cu—O eutectic during direct bonding. If the carbon content is less than 0.1% by mass, there is no effect of inclusion. If the carbon content exceeds 1.0% by mass, the carbon content is excessively increased and the conductivity of the copper plate is lowered.
  • the joining method used in the present invention is a direct joining method (DBC).
  • DBC direct joining method
  • the copper circuit board 12 and the back copper board 13 are placed in contact with each other on the oxide ceramic substrate 11 and heated to produce a eutectic liquid phase such as Cu—Cu 2 O and Cu—O at the bonding interface.
  • a eutectic liquid phase such as Cu—Cu 2 O and Cu—O at the bonding interface.
  • the wettability with the oxide ceramic substrate is increased by this liquid phase, and then the liquid ceramic phase is cooled and solidified to directly bond the oxide ceramic substrate and the copper plate.
  • a eutectic of copper and oxygen it is necessary to have a form in which copper and oxygen exist on the joint surface.
  • the formation of the eutectic liquid phase of copper and oxygen occurs at a temperature of 1065 ° C. or higher.
  • the heating step includes a first heating region having a maximum value between 1065 and 1085 ° C., and then a minimum between 1000 and 1050 ° C. A second heating region having a value, a third heating region having a maximum value between 1065 to 1120 ° C., and a cooling region thereafter.
  • FIG. 2 shows an example of a method for manufacturing an oxide-based ceramic circuit board according to the present invention.
  • reference numeral 1 is an oxide-based ceramic circuit board
  • 2 is a tray
  • 3 is a belt conveyor.
  • FIG. 2 illustrates a belt furnace 6 in which the tray 2 on which the oxide-based ceramic circuit board 1 before bonding is disposed is disposed on the belt conveyor 3 and the tray 2 is conveyed by the belt conveyor 3.
  • the belt furnace 6 is not limited as long as the first heating region, the second heating region, and the third heating region described later are provided.
  • a first heating region having a maximum heating temperature within a temperature range of 1065 to 1085 ° C. is formed.
  • the first heating region can be formed by adjusting the output temperature of a heater (not shown) in the portion corresponding to the first heating region.
  • a second heating region having a minimum heating temperature within a temperature range of 1000 to 1050 ° C. is formed, and then within a temperature range of 1065 to 1120 ° C.
  • a third heating region having a maximum value of the heating temperature is formed and the cooling process is continued.
  • the temperature can be adjusted by changing the output temperature of the heater in each region. It is necessary to continuously perform the heating process in the first heating region, the second heating region, and the third heating region. For this purpose, a method in which each temperature region is passed while being conveyed in the belt furnace 6 is preferable.
  • FIG. 3 shows an example of a temperature profile in the heating step in the method for manufacturing an oxide-based ceramic circuit board according to the present invention.
  • first heating region a temperature range of 1065 to 1085 ° C. where the eutectic reaction between copper and oxygen occurs
  • second heating region 1000 to 1064 ° C. where no eutectic reaction occurs.
  • the laminated body is heated to a temperature range (second heating region) and then heated again to a temperature range of 1065 to 1120 ° C. (third heating region) where a eutectic reaction occurs.
  • the heating temperature is increased, decreased, or increased, and each heating step is continuously performed.
  • the temperature profile may be set so as to be held at a constant temperature at which the maximum value or the minimum value is obtained.
  • the eutectic reaction is stabilized by providing a second heating region and heating at a temperature as low as 1000 to 1064 ° C., which is the temperature below the eutectic reaction, and thereafter, a temperature of 1065 to 1120 ° C. in the third heating region. Residual dendritic crystals can be removed by reheating in the range. In other words, the oxygen that has formed dendritic crystals can be released from the copper plate. Further, if the temperature of the second heating region is lower than 1000 ° C., the temperature is excessively lowered, and the dendritic crystals are not sufficiently removed in the third heating region.
  • the heating temperature range is 1020 to 1050 ° C.
  • a more preferable heating temperature range is 1070 to 1090 ° C.
  • the temperature of the third heating region is higher than the heating temperature of the first heating region.
  • the heating process is performed by continuously placing an oxide ceramic substrate (laminated body) on which a copper plate is placed on a tray, and continuously conveying the tray with a belt conveyor having a belt speed of 70 to 270 mm / min. It is preferable to use a belt furnace that implements the above.
  • the heat treatment time can be adjusted by controlling the belt speed. When the belt speed is less than 70 mm / min, the number of treatments (tact) per unit time is reduced, and in particular, excessive heat treatment in the first heating area further promotes dendrite generation, and the second heating area and the third heating area. It cannot be removed in the area.
  • the belt speed is higher than 270 mm / min, the joining in the first and third heating regions is insufficient, and there is a risk of causing defects such as peeling of the copper plate.
  • the belt speed is preferably in the range of 100 to 220 mm / min. Further, when continuously transporting using the above-described transport speed, it is preferable that the first heating region, the second heating region, and the third heating region each have a transport distance of 300 to 2000 mm.
  • the tray which conveys an oxide type ceramic circuit board is comprised with a nickel alloy.
  • the tray is conveyed to a heat treatment furnace (belt furnace) in contact with a copper plate or an oxide ceramic substrate.
  • a heat treatment furnace belt furnace
  • the material does not react with copper or an oxide-based ceramic substrate at a temperature of about 1065 to 1120 ° C. used in the direct bonding method.
  • the oxide ceramic circuit board is more effective in preventing warpage if a copper plate is disposed on both sides and bonded. Therefore, it is desired that the material does not react with the copper plate at the heat treatment temperature and does not deform by heat.
  • Inconel there is a nickel alloy as such a material, and inconel containing a predetermined amount of chromium and iron is particularly preferable.
  • Typical examples of Inconel include Inconel 600 (Ni 76.0, Cr 15.5, Fe 8.0 by mass%) and Inconel 601 (Ni 60.5, Cr 23.0, Fe 14.4, Al 1.4 by mass%).
  • Inconel 625, Inconel 718, and Inconel X750 can be used.
  • Inconel is used as a heat-resistant alloy and is preferable because it does not react with the copper plate and does not thermally deform. In order to more effectively prevent the reaction with the copper plate, it is effective to perform wet hydrogen treatment on the surface of the Inconel tray.
  • the direct bonding method utilizes a eutectic reaction between copper and oxygen, it is preferable that oxygen is not present more than necessary in the atmosphere in which the heating step is performed. For this reason, it is preferable to implement a heat joining process in inert atmosphere.
  • the inert atmosphere include nitrogen gas and argon gas. Among these, since nitrogen gas is more economical, it is preferable to use nitrogen gas.
  • the purity of the nitrogen gas is preferably a high purity gas of 99.9% or more, more preferably 99.99% or more.
  • the belt furnace 6 preferably includes a nitrogen gas atmosphere in which the ratio A / B of the nitrogen flow rate (A) of the entrance curtain and the nitrogen flow rate (B) of the exit curtain is controlled to 0.2 or less.
  • FIG. 4 shows a cross-sectional view of the belt furnace 6 for explaining the nitrogen flow rate.
  • an oxide-based ceramic circuit board (laminated body or bonded body) 1 is placed on a tray 2 and is transported from a carry-in port (inlet) 4 side to a carry-out port (belt conveyor) 3 by a carrying belt (belt conveyor) 3. It is transported to the exit 5 side at a predetermined transport speed.
  • An entrance curtain is provided near the carry-in port 4 of the belt furnace 6, while an exit curtain is provided near the carry-out port 5.
  • A indicates the nitrogen flow rate of the entrance curtain
  • B indicates the nitrogen flow rate of the exit curtain. That is, nitrogen gas flowing out at a nitrogen flow rate (A) flows in the vicinity of the carry-in port 4. Also, nitrogen gas flowing out at a nitrogen flow rate (B) flows in the vicinity of the carry-out port 5.
  • the nitrogen flow rate ratio A / B being 0.2 or less indicates that the nitrogen flow rate B is flowing at a flow rate that is at least five times greater than the nitrogen flow rate A. With such a relationship, a flow of nitrogen gas is formed from the carry-out port 5 toward the carry-in port 4.
  • the nitrogen flow rate (A) is preferably 2 to 20 liters / minute.
  • the nitrogen flow rate (B) is preferably 30 to 100 liters / minute. Within these ranges, it is easy to control the nitrogen flow rate.
  • the nitrogen flow rate in the vicinity of the carry-in port 4 is set to 2 liters / minute or more, it can function as an airflow curtain that prevents impurities such as the atmosphere and dust from entering from the carry-in port 4.
  • the nitrogen flow rate at the carry-out port 5 to 30 liters / min or more, it is possible to effectively prevent impurities such as the atmosphere and dust from entering the carry-out port 5. In terms of preventing impurities from entering, it is also effective to flow heated nitrogen gas.
  • the heating temperature of nitrogen gas is preferably in the range of 50 to 180 ° C. If the temperature is less than 50 ° C., the effect of heating the nitrogen gas is not sufficient.
  • the first method is to form a circuit structure provided with a plurality of circuit board elements and a bridge portion for connecting them together by pressing a copper plate.
  • the second method is a method in which a copper plate is disposed on an oxide-based ceramic substrate, and a circuit structure having a predetermined shape is formed by an etching process after bonding.
  • a resin binder is applied on an oxide ceramic substrate and a copper plate is disposed thereon.
  • the resin binder is not particularly limited as long as it is burned off in the heating step.
  • examples of such a resin binder include an acrylic binder (for example, isobutyl methacrylate).
  • the resin binder is preferably applied in the form of dots having a diameter of 10 mm or less. The resin binder is burned away by the heating process, but if it is applied to the entire surface on which the copper plate is placed, gas components such as carbon dioxide generated at the time of burning are not fully removed from the gap between the oxide-based ceramic substrate and the copper plate.
  • the bonding strength of the copper plate can be set to 9.5 kgf / cm or more.
  • the oxide-based ceramic circuit board according to the present embodiment is basically obtained by the method for manufacturing an oxide-based ceramic circuit board according to the present invention. It is not particularly limited.
  • the structure of the oxide ceramic circuit board according to the present embodiment will be described below.
  • the oxide-based ceramic circuit board according to the present embodiment includes an oxide-based ceramic circuit board obtained by bonding a copper plate and an oxide-based ceramic substrate by a direct bonding method.
  • the area ratio of copper on the bonding surface side is 60% or less per unit area of 3000 ⁇ m ⁇ 3000 ⁇ m, and the bonding strength of the copper plate is 9.5 kgf / cm or more.
  • the oxide-based ceramic substrate is preferably made of any one of an alumina sintered body and a mixed sintered body of alumina and zirconia.
  • the alumina sintered body may contain 8% by mass or less of a sintering aid such as an Si component, a Ca component, an Mg component, or an Na component.
  • the mixed sintered body of alumina and zirconia is preferably a sintered body of 10 to 90% by mass of zirconia and the remaining alumina. In addition, you may contain 8 mass% or less of sintering adjuvant as needed.
  • the density of the oxide-based ceramic substrate is preferably 3.60 to 3.79 g / cm 3 .
  • the thickness of the oxide-based ceramic substrate is preferably 0.3 to 1.2 mm.
  • the copper plate As a constituent material of the copper plate, tough pitch copper containing a predetermined amount of oxygen may be used, but a copper plate having a low oxygen content may be used.
  • the thickness of the copper plate is preferably 0.2 to 0.5 mm. While the thickness of the oxide ceramic substrate is in the range of 0.3 to 1.2 mm, the difference in thermal expansion between the oxide ceramic substrate and the copper plate is achieved by setting the thickness of the copper plate to 0.2 to 0.5 mm. This improves the durability in the heat cycle test (TCT test).
  • the copper plate preferably contains 0.1 to 1.0% by mass of carbon. Since carbon functions as a deoxidizer, it is possible to obtain an effect of moving oxygen in the copper plate (tough pitch copper or oxygen-free copper) to the copper plate surface.
  • the oxygen that has moved to the surface of the copper plate can be used to form a Cu—O eutectic when performing the direct bonding method. If the carbon content is less than 0.1% by mass, the effect of inclusion is not obtained. On the other hand, if the carbon content exceeds 1.0% by mass, the carbon content is excessively increased and the conductivity of the copper plate is lowered. Further, when performing the direct bonding method, the surface roughness of the oxide ceramic substrate is preferably 0.1 to 0.7 ⁇ m in Ra. If the surface roughness Ra is less than 0.1 ⁇ m, highly accurate surface polishing is required, which increases costs.
  • the surface roughness Ra exceeds 0.7 ⁇ m, the surface is too rough and a gap is formed between the copper plate and the oxide-based ceramic substrate, and the eutectic reaction may not proceed sufficiently.
  • the area ratio of copper on the bonding surface side of the copper plate with the oxide ceramic substrate when the bonded copper plate is peeled off is a unit. The area may be 60% or less per 3000 ⁇ m ⁇ 3000 ⁇ m.
  • the copper area ratio on the bonding surface side of the copper plate with the oxide-based ceramic substrate is determined by the surface analysis by EPMA on the bonding surface side of the peeled copper plate with the oxide-based ceramic substrate.
  • the most detected area is 60% or less per unit area of 3000 ⁇ m ⁇ 3000 ⁇ m.
  • An area ratio of copper of 60% or less per unit area indicates that a portion peeled from the oxide ceramic substrate is attached to the remaining portion. That is, in the remaining part, it shows that joining of the copper plate and the oxide-based ceramic substrate is uniformly performed over the entire surface.
  • a more preferable area ratio of copper is 40% or less.
  • the measurement may be performed by dividing into a plurality of visual fields.
  • the average crystal grain size of the copper plate after bonding is preferably 300 to 800 ⁇ m.
  • the direct bonding method is a bonding method using a eutectic reaction between copper and oxygen.
  • the oxygen in the copper plate or on the surface of the copper plate collects at the crystal grain boundaries of the copper plate. Since oxygen collected at the grain boundaries is used for the eutectic reaction, it is preferable that the grain boundaries of the copper plate have an appropriate size. If the average crystal grain size of the copper plate is smaller than 300 ⁇ m, the grain boundary phase is too small or too thin, resulting in a decrease in bonding strength.
  • the average crystal grain size exceeds 800 ⁇ m, the grain boundary phase becomes too large and the ratio of the copper crystal grain boundary per unit area is reduced, leading to a reduction in bonding strength.
  • the bonding strength can be improved and the TCT characteristics can be further improved.
  • oxygen is agglomerated at the copper crystal grain boundary by performing surface analysis of oxygen on the bonding surface side of the peeled copper plate by EPMA.
  • the bonding strength of the copper plate after performing 100 cycles of the TCT test in which one cycle is ⁇ 40 ° C. ⁇ 30 minutes ⁇ 25 ° C. ⁇ 10 minutes ⁇ 125 ° C. ⁇ 30 minutes ⁇ 25 ° C. ⁇ 10 minutes is 6.5 kgf / cm It can also be set as above.
  • the bonding strength between the oxide-based ceramic substrate and the copper plate is improved by aggregating oxygen in the copper crystal grain size of the copper plate or the grain boundary phase of the copper plate. Can do. Therefore, it is possible to provide an oxide-based ceramic circuit board with particularly improved TCT characteristics. With such a circuit board, it is possible to provide a ceramic circuit board with high cost merit utilizing the characteristics of an inexpensive oxide-based ceramic board.
  • an alumina substrate (length 50 mm ⁇ width 30 mm ⁇ thickness 0.4 mm, surface roughness Ra 0.3 ⁇ m, density 3.72 g / cm 3 ) was prepared.
  • a tough pitch copper plate (length 40 mm ⁇ width 20 mm ⁇ thickness 0.5 mm, average crystal grain size 50 ⁇ m) having an oxygen content of 500 mass ppm was prepared as a copper plate for a metal circuit board.
  • a tough pitch copper plate (length 40 mm ⁇ width 20 mm ⁇ thickness 0.5 mm was prepared as the copper plate for the back copper plate with an oxygen content of 500 mass ppm.
  • the carbon content in the copper plate was less than 0.1 mass%.
  • a belt furnace 6 as shown in FIG. 4 is used to carry out a direct bonding method by performing a heating process having a first heating region, a second heating region, and a third heating region shown in Table 1, and examples 1 to 5 was prepared.
  • region was unified at 1000 mm.
  • the flow rates (A) and (B) of nitrogen gas in the inlet curtain and outlet curtain of the belt furnace 6 were set to the values shown in Table 1.
  • An oxide-based ceramic circuit board according to Comparative Example 1 was prepared by performing the same process as in Example 1 except that the direct bonding method was performed in the heating process in which the second heating process and the third heating process were not performed.
  • an alumina substrate (length 50 mm ⁇ width 30 mm ⁇ thickness 0.4 mm, surface roughness Ra 0.5 ⁇ m, density 3.68 g / cm 3 ) was prepared.
  • a pure copper plate (40 mm long ⁇ 20 mm wide ⁇ 0.5 mm thickness, average crystal grain size 60 ⁇ m) having an oxygen content of 50 mass ppm or less was prepared as a copper plate for a metal circuit board.
  • a pure copper plate (length 40 mm ⁇ width 20 mm ⁇ thickness 0.5 mm) having an oxygen content of 50 mass ppm or less was prepared as a copper plate for the back copper plate.
  • the carbon content in a copper plate used the copper material less than 0.1 mass%.
  • the alumina substrate bonding surface side of the pure copper plate was heated to form a 4 ⁇ m thick copper oxide film. Then, it arranged on the tray made from Inconel 600 as a laminated body in the order of back copper plate / alumina substrate / copper circuit board. Next, using a belt furnace 6 as shown in FIG. 4, a heating process having a first heating region, a second heating region, and a third heating region shown in Table 2 is performed and a direct bonding method is performed. Oxide ceramic circuit boards according to Examples 6 to 9 were prepared.
  • region was unified at 1000 mm.
  • the flow rates (A) and (B) of nitrogen gas in the inlet curtain and outlet curtain of the belt furnace 6 were set to the values shown in Table 2.
  • Example 10 As an oxide ceramic substrate, an alumina substrate (length 50 mm ⁇ width 30 mm ⁇ thickness 0.4 mm, surface roughness Ra 0.5 ⁇ m, density 3.68 g / cm 3 ) was prepared.
  • a pure copper plate (length 40 mm ⁇ width 20 mm ⁇ thickness 0.5 mm, average crystal grain size 60 ⁇ m) having an oxygen content of 50 mass ppm or less was prepared as a copper plate for a metal circuit board. Furthermore, a pure copper plate (length 40 mm ⁇ width 20 mm ⁇ thickness 0.5 mm) having an oxygen content of 50 mass ppm or less was prepared as a copper plate for the back copper plate. In addition, the carbon content in a copper plate used the copper material less than 0.1 mass%. On the other hand, the copper plate for copper circuit boards was pressed to form two circuit elements each having a length of 15 mm and a width of 6 mm, and copper plates connected by a bridge structure were prepared.
  • the back copper plate / alumina substrate / copper circuit board was stacked in this order on the Inconel 600 tray, and arranged as a laminate.
  • a heating process having a first heating region, a second heating region, and a third heating region shown in Table 2 is performed and a direct bonding method is performed.
  • An oxide-based ceramic circuit board according to Example 10 was prepared.
  • region was unified at 1000 mm.
  • the flow rates (A) and (B) of nitrogen gas in the inlet curtain and outlet curtain of the belt furnace 6 were set to the values shown in Table 2.
  • the copper circuit board was etched to form two circuit portions of 15 mm length ⁇ 6 mm width.
  • the bridge portion of the copper circuit board was deleted.
  • the bonding strength of the copper circuit board was determined. Also, 100 cycles of TCT test with -40 ° C. ⁇ 30 minutes ⁇ 25 ° C. ⁇ 10 minutes ⁇ 125 ° C. ⁇ 30 minutes ⁇ 25 ° C. ⁇ 10 minutes as one cycle. The bonding strength of was measured.
  • the area ratio of the copper by the side of the joint surface of a copper plate when peeling a copper circuit board was calculated
  • the area ratio was measured by EPMA analysis of the bonded surface side of the peeled copper plate, and the area ratio at which the most copper was detected was determined at a rate per unit area of 3000 ⁇ m ⁇ 3000 ⁇ m.
  • the presence or absence of oxygen aggregation was investigated by surface analysis of EPMA.
  • the analysis of EPMA was obtained by continuously analyzing a unit area of 300 ⁇ m ⁇ 300 ⁇ m until a total area of 3000 ⁇ m ⁇ 3000 ⁇ m was obtained.
  • the average crystal grain size of the copper plate after joining was also measured.
  • Ni plating was given to the copper circuit board, and the wettability was investigated.
  • the wettability was evaluated as ⁇ when the Ni plating adhesion area to the copper circuit board was 100%, and ⁇ when 99% or less.
  • the measurement survey results are shown in Table 3.
  • Example 9 since the nitrogen gas flow rate control (A / B) was 1, the wettability with the Ni plating on the copper plate surface was lowered. Dentrite structure was confirmed on the surface of the copper circuit board. Moreover, since the comparative example 1 did not provide the 2nd heating area
  • Example 11 An oxide-based ceramic circuit board according to Example 11 was prepared by repeating the same process except that the copper plate of Example 1 was replaced with a tough pitch copper plate having a carbon content of 0.5 mass%. Further, the same treatment was repeated except that the copper plate of Example 6 was replaced with oxygen-free copper (pure copper) having a carbon content of 0.2% by mass to prepare an oxide-based ceramic circuit board according to Example 12.
  • Example 11 was replaced with a mixed sintered body of alumina and zirconia (zirconia 20 wt%, yttria 5 wt%, remainder of alumina).
  • a ceramic circuit board was prepared.
  • the same treatment was repeated except that the alumina substrate of Example 12 was replaced with a mixed sintered body of alumina and zirconia (zirconia 20 wt%, yttria 5 wt%, remaining alumina), and the oxide system according to Example 14 was repeated.
  • a ceramic circuit board was prepared. Thereafter, the same measurement as in Example 1 was performed on the circuit boards of Examples 11-14. The results are shown in Table 4 below.
  • the heating process is performed in each of the predetermined first heating region, second heating region, and third heating region. Since it can be stabilized, the manufacturing yield of the ceramic circuit board can be improved.
  • the oxide-based ceramic circuit board according to the present invention has high bonding strength and can improve TCT characteristics.

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Abstract

Ce procédé de liaison d'une carte de circuits imprimés de céramique d'oxyde met en jeu la liaison d'une carte de circuits imprimés de céramique d'oxyde et d'une plaque de cuivre en un seul corps au moyen d'une étape de formation d'un stratifié par disposition d'une plaque de cuivre sur une carte de circuits imprimés de céramique d'oxyde et d'une étape de chauffage du stratifié obtenu et est caractérisé en ce que l'étape de chauffage susmentionnée met en jeu une étape de chauffage du stratifié dans une première région de chauffage ayant une température maximale de chauffage entre 1 065-1 085°C, une étape de chauffage ultérieure du stratifié dans une deuxième région de chauffage ayant une température minimale de chauffage entre 1 000-1 050°C et une étape de formation ultérieure d'un ensemble par chauffage du stratifié dans une troisième région de chauffage ayant une température maximale de chauffage entre 1 065-1 120°C et par refroidissement ensuite de l'ensemble dans une région de refroidissement. Au moyen de la configuration susmentionnée, on obtient une carte de circuits imprimés de céramique oxyde ayant d'excellentes caractéristiques d'essai de cycle thermique (TCT).
PCT/JP2012/068957 2011-07-28 2012-07-26 Procédé de fabrication d'une carte de circuits imprimés de céramique d'oxyde et carte de circuits imprimés de céramique d'oxyde Ceased WO2013015355A1 (fr)

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WO2017097758A1 (fr) * 2015-12-07 2017-06-15 Aurubis Stolberg Gmbh & Co. Kg Substrat en cuivre-céramique, produit semi-fini en cuivre pour la fabrication d'un substrat en cuivre-céramique et procédé pour la fabrication d'un substrat en cuivre-céramique
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US11584696B2 (en) 2016-02-26 2023-02-21 Heraeus Deutschland GmbH & Co. KG Copper-ceramic composite
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US11013112B2 (en) 2017-03-30 2021-05-18 Kabushiki Kaisha Toshiba Ceramic copper circuit board and semiconductor device based on the same
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