WO2013083334A1 - Composant semi-conducteur optoélectronique et procédé de fabrication d'un composant semi-conducteur optoélectronique - Google Patents

Composant semi-conducteur optoélectronique et procédé de fabrication d'un composant semi-conducteur optoélectronique Download PDF

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Publication number
WO2013083334A1
WO2013083334A1 PCT/EP2012/071577 EP2012071577W WO2013083334A1 WO 2013083334 A1 WO2013083334 A1 WO 2013083334A1 EP 2012071577 W EP2012071577 W EP 2012071577W WO 2013083334 A1 WO2013083334 A1 WO 2013083334A1
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WO
WIPO (PCT)
Prior art keywords
conversion element
heat
radiation exit
conducting
insulating material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2012/071577
Other languages
German (de)
English (en)
Inventor
Stefan Stegmeier
Karl Weidner
Stefan Illek
Walter Wegleiter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of WO2013083334A1 publication Critical patent/WO2013083334A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8583—Means for heat extraction or cooling not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Definitions

  • An optoelectronic semiconductor component is specified.
  • a method for producing such a semiconductor device is specified.
  • An object to be solved is to provide an optoelectronic semiconductor device in which a conversion element, which is used to convert a primary radiation into a
  • Semiconductor device a carrier.
  • the carrier has a
  • the carrier is preferably that component of the semiconductor device which contains the
  • the carrier can be a printed circuit board, in particular a so-called Printed Circuit Board, or PCB for short.
  • the carrier may be a ceramic, a
  • Semiconductor body such as silicon, a metal core board or a fiber reinforced silicone act.
  • the carrier is formed by a thermally and electrically conductive material such as a metal, for example made of copper or aluminum, or of a copper alloy or aluminum alloy.
  • the carrier may be printed conductors and / or electrical
  • a thickness of the carrier is preferably between
  • this includes
  • Semiconductor device one or more semiconductor chips.
  • Semiconductor chips are set up to generate electromagnetic primary radiation.
  • the semiconductor chips are light-emitting diode chips.
  • the semiconductor component preferably has at least one semiconductor chip which is in the ultraviolet or blue spectral range in the
  • the semiconductor device may comprise various types of semiconductor chips, in particular blue and red emitting semiconductor chips.
  • the at least one semiconductor chip or all semiconductor chips are at the
  • the semiconductor chips can be any semiconductor chips. Mounting side attached.
  • the semiconductor chips can be any semiconductor chips.
  • Conductor tracks and / or contact surfaces be appropriate.
  • Semiconductor chips only a connecting means such as a solder or an adhesive. Are several semiconductor chips on the
  • Assembled mounting side so they have in a lateral direction, ie in a direction parallel to the mounting side, preferably at a distance from each other.
  • the conversion elements are configured to convert part or all of the primary radiation into secondary radiation
  • each semiconductor chip is exactly one
  • the Conversion element mounted on a radiation exit side of the semiconductor chip.
  • the radiation exit side of the semiconductor chip is in this case facing away from the mounting side.
  • the radiation exit side is the side in which the intended use of the
  • the conversion element is preferably applied directly to the radiation exit side. This may mean that a material of the conversion element is in direct, physical contact with a material of the semiconductor chip. It may also be that between the conversion element and the semiconductor chip only a connecting means for fixing the conversion element is located on the semiconductor chip, such as an adhesive.
  • the raw material on or more preferably has a thermal conductivity which is at least ten times or at least fifty times an average thermal conductivity of the conversion element.
  • the at least one heat conduction structure is located outside the at least one heat conduction structure
  • the heat conduction structure is in places or over the entire area in direct, physical contact with the
  • Optoelectronic semiconductor device on a support with a mounting side.
  • On the mounting side is at least one semiconductor chip for generating an electromagnetic
  • the semiconductor chip has a radiation exit side which faces away from the mounting side. At least one conversion element for at least
  • the semiconductor device includes at least one heat conduction structure for cooling the conversion element.
  • the heat conduction structure is outside the
  • Conversion element and, in a lateral direction parallel to the radiation exit side is at least in places in direct contact with the conversion element.
  • Lamps that have light-emitting diodes as light sources are increasingly being used for spotlights or headlamps with a high brightness.
  • spotlights or headlamps with a high brightness are increasingly being used for spotlights or headlamps with a high brightness.
  • Luminances needed If a plurality of light-emitting diode chips are used, as a rule only a small distance between adjacent light-emitting diode chips is necessary in order to achieve the desired luminance.
  • LED chips and a smaller size can be achieved if the heat loss in the wavelength conversion is effectively led out of the interior of the conversion element, with a light transmission through the conversion element is to be influenced as little as possible in order to achieve a high Lichtauskoppeleffizienz.
  • This can be achieved by using at least one heat-conducting structure, preferably in combination with a heat-conducting element.
  • the conversion element has one or more
  • the heat-conducting elements are for
  • a material of the heat-conducting elements particularly preferably has one
  • Thermal conductivity which is at least a tenfold or at least a fifty times a mean
  • the heat-conducting element and the heat-conducting structure can be a common, continuous
  • the heat-conducting elements can run in one or more cutting planes parallel to the radiation exit side.
  • Heat conducting element or the heat conducting elements are formed by threads, by one or more networks, by one or more plates and / or by elongated filler particles of a thermally conductive material or have such
  • the heat-conducting structures are located on outer surfaces of the conversion element in order to dissipate heat therefrom from the conversion element, and thus preferably also from the at least one heat-conducting element.
  • Thermal conductivity structure has a thermal conductivity of at least 20 W / mK or at least 50 W / mK or at least
  • Thermal conductivity of the material of the cherriesleitelements the average thermal conductivity of the remaining components of the conversion element by at least a factor of 10 or by at least a factor of 100.
  • the average thermal conductivity of the remaining components of the conversion element by at least a factor of 10 or by at least a factor of 100.
  • the heat conducting element formed by a metal such as copper, aluminum or silver or alloys hereby.
  • the material may be formed by a ceramic or by carbonaceous materials such as carbon nanotubes or diamond or have the substances mentioned.
  • Thermal conduction structure may be formed of the same or different materials.
  • the heat-conducting elements have a volume fraction of the total conversion element of at most 10% or at most 5% or at most 2%.
  • the Volume fraction of the heat conduction thus significantly below a percolation threshold for spherical particles.
  • Entóffizienz is realized by the particular net-like or thread-like shape of the heat conducting elements.
  • Embed conversion element Such filler particles are often spherical. For the formation of heat conduction paths, a volume fraction of at least 30% to 35% is necessary. Since the filler particles must have a high thermal conductivity, a choice of material for the filler particles is limited and from the high volume fraction results in a reduced light transmission of the conversion element. By such filler particles is a
  • Translucency can be increased.
  • Conversion element by at most 0.5 or at most 0.2 or at most 0.1.
  • a refractive index of a material of the heat-conducting elements is then adapted to the refractive index of the conversion element.
  • the material of the heat-conducting elements is preferably permeable as well as clear-sighted or scattering for the primary radiation and / or the secondary radiation.
  • the heat conduction structure surrounds the conversion element in the lateral direction all around. In other words, then forms a material of the heat conduction structure a closed ring, seen in plan view of the radiation exit side, around the conversion element, wherein all around direct contact between the conversion element and the
  • the conversion element has a matrix material and conversion particles embedded therein.
  • the matrix material is in particular a silicone or a
  • the conversion particles may have an average diameter of between 2 ⁇ and 20 ⁇ .
  • the conversion particles are formed, for example, from a garnet, an orthosilicate, a nitridosilicate, a silicon oxynitride and / or a silicon nitride, the substance classes mentioned being preferred
  • Conversion particles on the entire conversion element is preferably between 5% and 80%, in particular between 10% and 25% or between
  • Conversion element have a ceramic matrix or even a ceramic that is sintered from conversion particles.
  • an electrical contacting of the semiconductor chip takes place at least in part via the heat conduction structure.
  • one of the electrical connections of the semiconductor chip is through the
  • Thermal conductivity realized is an electrical contact of the semiconductor chip to the
  • Radiation exit side in electrically conductive connection with the heat conduction structure.
  • the semiconductor chip is electrically insulated from the heat-conducting structure.
  • the semiconductor chip is in thermal contact with the semiconductor chip
  • the at least one semiconductor chip or the semiconductor chips are in the lateral direction of a thermally conductive
  • the insulation material is electrically insulating.
  • a specific thermal conductivity of the insulating material is for example at least 1 W / mK or at least 2 W / mK or at least 5 W / mK or at least 20 W / mK.
  • the specific thermal conductivity of the insulating material is at least a factor of 10 or at least a factor of 50 above that of the matrix material of the conversion element, if such a matrix material is present.
  • the insulating material is a hybrid material made by a sol-gel method. According to at least one embodiment, the
  • Insulation material to a height such that, starting from the mounting side of the carrier, at least until
  • Radiation exit side surmounted.
  • the insulating material preferably ends flush with the radiation exit side.
  • the heat conduction structure is above the insulation material. It is possible in this case that the insulation material, seen in plan view of the mounting side, is completely covered by the heat conduction structure. Furthermore, it is possible that, seen in plan view, the heat conduction structure exclusively on the
  • Insulation material is attached.
  • the heat conduction structure then, as seen in plan view, does not extend to those areas in which no insulation material is attached.
  • the cooling fins preferably point in a direction away from the mounting side.
  • the cooling fins may be located on the same side of the carrier as the semiconductor chips.
  • the roughening is at least at such boundary surfaces and / or
  • An average roughness of the roughening is for example at least 1 ⁇ or at least 5 ⁇ or at least 10 ⁇ . Alternatively or additionally, the average roughness of the roughening is at most 100 ⁇ or
  • Roughening is an adhesion-increasing gearing between the heat conduction structure and the conversion element achievable.
  • the conversion element is in places in direct contact with an electrical contact structure.
  • Contact structure is adapted to electrically contact the semiconductor chip, in particular at the
  • the heat conduction structure may be electrically isolated from the electrical contact structure. It is possible that a cooling of the conversion element takes place via the electrical contact structure.
  • the electrical contact structure is located in places or over the entire surface between the heat-conducting structure and the insulating material or the carrier, in particular as seen along a direction perpendicular to the mounting side. In other words, the heat conduction structure is then applied over the contact structure.
  • Between the contact structure and the leit Jardin may be another insulation material.
  • the heat conduction structure and the conversion element in a direction away from the mounting side, flush within the manufacturing tolerances. In other words, then have the heat conduction structure and the conversion element, based on the mounting side, an equal height.
  • Semiconductor chips which are arranged in a matrix-like manner on the mounting side.
  • the semiconductor chips are surrounded in each case by the heat conduction structure, in plan view of the
  • Assembly side seen.
  • at least a part of the heat conduction structure is then located between adjacent semiconductor chips.
  • a front side of the semiconductor device, which is opposite to the carrier, can, seen in plan view of the mounting side, completely through the
  • Conversion elements and the heat conduction structure to be formed.
  • side walls of the heat-conducting structure are oriented perpendicular to the radiation exit side within the scope of the manufacturing tolerances.
  • the side walls can, in particular with a tolerance of at most 30 ⁇ or of at most 50 ⁇ along a
  • chip edges are boundary surfaces of
  • the method has at least the following steps:
  • FIGS 1 and 2 are schematic representations of
  • FIGS 3 to 7 are schematic representations of
  • FIG. 8 shows a modification of a semiconductor component.
  • FIG. 1 shows a method for producing a
  • Optoelectronic semiconductor device 1 illustrated.
  • a plurality of semiconductor chips 3 are attached to a mounting side 20 of a carrier 2 in a line-like or, preferably, matrix-like manner.
  • the semiconductor chips 3 are light-emitting diode chips which emit blue light, for example.
  • the semiconductor chips 3 each have
  • an insulation material 7 is applied in areas between the semiconductor chips 3.
  • the insulating material 7 is electrically insulating and has a high thermal conductivity. It is possible that the insulating material 7 is in direct physical contact with chip flanks 35, wherein the chip flanks 35
  • the insulating material 7 projects beyond the semiconductor chips 3, in the direction away from the mounting side 20.
  • the upper side 70 of the insulating material 7 facing away from the carrier 2 and the radiation exit sides 30 can be approximately flush.
  • the insulation material 7 can be partially removed after application.
  • Insulation material 7 and in places on the
  • the semiconductor chips 3 are electrically contacted via the electrical contact structure 8 and via the carrier 2, which may be electrically conductive and a metal body.
  • the semiconductor device 1 can thus be free of bond wires.
  • step shown in Figure 1D is on a side facing away from the carrier 2 of the electric
  • a thickness of the further insulating material 7b is for example at most 100 ⁇ or at most 10 ⁇ or at most 0.5 ⁇ .
  • the further insulation material 7b may be a lacquer. Unlike shown in Figure 1D, the other
  • Insulation material 7b completely cover the electrical contact structure 8 and optionally also the radiation exit sides 30.
  • the further insulating material 7b is, for example, a few tens of nanometers thin
  • a material of the heat-conducting structure 5 preferably a metal such as copper or a copper alloy, is applied galvanically. It is also possible that the
  • Insulation material 7b is placed and fastened
  • An adhesive may also be the further insulation material 7b itself.
  • the heat-conducting structure 5 which is preferably a continuous, one-piece structure, has cooling fins 50.
  • the heat-conducting structure 5 preferably has a plurality of cooling fins 50.
  • the heat-conducting structure 5 with a reflective coating for example, with a white paint or with a
  • the heat-conducting structure 5 has a roughening 55 on side surfaces.
  • Roughening 55 is a mechanical stop of a
  • Heat conduction structure 5 can be improved. By roughening 55 a toothing with the conversion element 4 can be achieved, so that can be dispensed with a thermally poorly conductive adhesive between the conversion element 4 and the semiconductor chip 3 or 5 bathleit Modell.
  • the conversion element 4 is for example in the form of prefabricated platelets in areas between the Heat conduction structure 5 pressed. It is also possible that the conversion element, for example by means of doctoring or screen printing or dispensing above the semiconductor chip 3 between
  • Part of the heat conduction structure 5 is introduced.
  • the attachment of the conversion elements 4 to the semiconductor chips 3 and / or to the heat-conducting structure 5 preferably takes place without a connection.
  • the heat conduction structure 5 is, in the context of manufacturing tolerances, on areas with the
  • Insulation material 7 limited, in plan view of the
  • Heat-conducting structure 5 flush.
  • the heat conduction structure 5 is not at a front side of the semiconductor device 1, which is opposite to the carrier 2, of the conversion elements 4th
  • FIG. 1 Another manufacturing method for the semiconductor device 1 is illustrated in FIG. 1A. The method steps according to FIGS. 1A to 1C can be shown in FIG. 1A.
  • the conversion elements 4 are applied in a structured manner before the heat-conducting structure 5 is applied.
  • the conversion elements 4 are applied in a structured manner before the heat-conducting structure 5 is applied.
  • the further insulation material 7b is applied in layers in intermediate spaces between adjacent, island-like conversion elements 4.
  • the material for the heat-conducting structure 5 is then attached all around.
  • the optional method step according to FIG. 2C the
  • Cooling fins 50 made.
  • FIG. 1 Front view of an embodiment of the semiconductor device 1 to see.
  • the front side is essentially formed by the conversion elements 4 and by the heat-conducting structure 5.
  • the optional cooling fins 50 are not shown in FIG.
  • the semiconductor chips 3 are, as in all others
  • Embodiments possible arranged in a matrix and can form island-like areas, seen in plan view around the heat conduction structure 5 and the
  • Insulation material 7 are surrounded.
  • An average distance between adjacent semiconductor chips 3 is preferably between 0.25 times and three times the mean edge length of the semiconductor chips 3.
  • they are arranged around the matrix
  • thermal vias 9 About the thermal vias 9 is a thermally conductive connection of the
  • the thermal vias are 9 metal-filled recesses through the insulating material 7 therethrough
  • the thermal vias 9 are located in particular in regions in which no contact structure 8 between the sauceleit Quilt 5 and the insulating material 7 is present to prevent electrical short circuits.
  • thermal vias 9 may also be mounted around each individual semiconductor chip 3.
  • a further exemplary embodiment of the semiconductor component 1 is shown in a sectional illustration in FIG. 4A and in a plan view in FIG. 4B.
  • the carrier 2 On the carrier 2,
  • the conversion element 4 is located on the radiation exit side 30.
  • the conversion element 4 comprises a plurality of heat-conducting elements 6.
  • the heat-conducting elements 6 are net-shaped, compare Figure 4B. By the heat-conducting elements 6 is a cooling of the
  • a diameter of the network forming threads is for example between 10 nm and 5 ⁇ , in particular between 10 nm and 0.5 ⁇ inclusive.
  • the heat-conducting elements 6 can also be formed by threads, which can emanate in a star shape from the heat-conducting structure 5, cf. FIG. 4C.
  • Such heat-conducting elements 6 are in the conversion element 4, for example during an injection process,
  • the semiconductor device 1 is electrically contacted via a lower side of the carrier 2 via contact points 8b, 8c.
  • a contact pad 8e which is electrically connected via the contact structure 8a, 8d to the contact point 8c at the underside, see also FIG. 4B.
  • Contact structures 8a, 8b be applied over a large area and thus serve to heat the conversion element 4.
  • the contact structure 8d also forms the heat-conducting structure 5 and is in direct contact with the conversion element 4 in the lateral direction.
  • the heat-conducting elements 6 stand
  • the heat-conducting element 6 is formed by a plurality of plates which, viewed in plan view, extend over the whole surface through the conversion element 4.
  • the plates are thin layers of a transparent, thermally conductive material, for example thin diamond layers.
  • a thickness of the layers is intermediate
  • Heat-conducting elements 6 may be present.
  • the heat-conducting elements 6 are formed by aligned elongated fillers
  • nanotubes or nanowires such as out
  • Fillers for the heat-conducting elements 6 can in the manufacture of the conversion element by applying electric fields or obtained by rolling.
  • the conversion elements 6 also run according to FIG. 6 essentially parallel to the radiation exit side 30 and are plane-like
  • Such heat-conducting elements 6, as shown in FIGS. 4 to 6, can also be present in the exemplary embodiments according to FIGS. 1 to 3. Likewise, an electrical contact according to the figures 4 to 6 at
  • Insulation material 7 shown as a thin layer, the main side 20 and the chip flanks 35 and parts of the
  • Insulating material is, for example, at most 1 ym.
  • the heat conduction structure 5 is located, along a lateral direction, in places next to the chip edges 35.
  • a protective layer 75 attached, such as with a silicon oxide.
  • the protective layer 75 may also be a filter, for example for UV radiation. It is also possible that the protective layer 75 is designed as an antireflection layer.
  • FIG. 8 shows a modification of a semiconductor component.
  • the semiconductor chip 3 is located in a

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Abstract

Dans au moins un mode de réalisation, ce composant semi-conducteur optoélectronique (1) comprend un substrat (2). Une puce semi-conductrice (3) est montée sur une face de montage (20), pour la production d'un rayonnement électromagnétique. Au moins un élément convertisseur (4) pour la conversion au moins partielle du rayonnement primaire en un rayonnement secondaire présentant une longueur d'onde supérieure à celle du rayonnement primaire, est fixé sur une face d'émission de rayonnement (30) de la puce semi-conductrice (3). Le composant semi-conducteur (1) contient une structure thermoconductrice (5) pour le refroidissement de l'élément de conversion (4). La structure thermoconductrice (5) est située à l'extérieur de l'élément convertisseur (4) et se trouve au moins par endroits en contact direct avec l'élément convertisseur (4).
PCT/EP2012/071577 2011-12-09 2012-10-31 Composant semi-conducteur optoélectronique et procédé de fabrication d'un composant semi-conducteur optoélectronique Ceased WO2013083334A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011056220.6 2011-12-09
DE102011056220A DE102011056220A1 (de) 2011-12-09 2011-12-09 Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils

Publications (1)

Publication Number Publication Date
WO2013083334A1 true WO2013083334A1 (fr) 2013-06-13

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DE (1) DE102011056220A1 (fr)
WO (1) WO2013083334A1 (fr)

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DE102014116079A1 (de) * 2014-11-04 2016-05-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102014116080A1 (de) * 2014-11-04 2016-05-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102015111910A1 (de) * 2015-07-22 2017-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement, Verbund von optoelektronischen Bauelementen und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102017109485A1 (de) * 2017-05-03 2018-11-08 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102019126021A1 (de) * 2019-09-26 2021-04-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements

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