WO2013097542A1 - 一种电流传感器 - Google Patents

一种电流传感器 Download PDF

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Publication number
WO2013097542A1
WO2013097542A1 PCT/CN2012/083742 CN2012083742W WO2013097542A1 WO 2013097542 A1 WO2013097542 A1 WO 2013097542A1 CN 2012083742 W CN2012083742 W CN 2012083742W WO 2013097542 A1 WO2013097542 A1 WO 2013097542A1
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Prior art keywords
mtj
temperature
current
bridge
current sensor
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PCT/CN2012/083742
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English (en)
French (fr)
Inventor
韩连生
白建民
黎伟
王建国
薛松生
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JIANG SU MULTI DIMENSIONAL TECHNOLOGY Co Ltd
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JIANG SU MULTI DIMENSIONAL TECHNOLOGY Co Ltd
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Priority to US14/368,299 priority Critical patent/US9465056B2/en
Priority to EP12863825.1A priority patent/EP2801834B1/en
Priority to JP2014549321A priority patent/JP6403326B2/ja
Publication of WO2013097542A1 publication Critical patent/WO2013097542A1/zh
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092—Measuring current only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/32—Compensating for temperature change
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R17/00—Measuring arrangements involving comparison with a reference value, e.g. bridge
    • G01R17/10—AC or DC measuring bridges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors

Definitions

  • the present invention relates to a current sensor, and more particularly to a current sensor comprising a temperature compensated magnetoresistance using a tunnel junction magnetoresistance as a sensitive component.
  • AMR anisotropic magnetoresistance
  • GMR giant magnetoresistance
  • the sensitivity of the Hall element is extremely low.
  • the current sensor with the Hall element as the sensitive element usually uses a polymagnetic ring structure to amplify the magnetic field, improve the Hall output sensitivity, thereby increasing the volume and weight of the sensor, and the Hall element has power consumption. Large, poor linearity defects.
  • the AMR component is much more sensitive than the Hall element, its linear range is narrow.
  • the current sensor with AMR as the sensitive component needs to set the reset/reset coil to perform its preset-reset operation, which causes the manufacturing process to be complicated.
  • the configuration of the structure increases the power consumption while increasing the size.
  • a current sensor with a GMR component as a sensitive component has higher sensitivity than a Hall current sensor, but its linear range is low.
  • the MTJ (Magnetic Tunnel Junction) component is a new magnetoresistance effect sensor that has been industrially applied in recent years. It utilizes the tunnel magnetoresistance (TMR) of magnetic multilayer film materials, mainly in magnetic properties.
  • TMR tunnel magnetoresistance
  • the resistance of the magnetic multilayer film material changes significantly with the change of the magnitude and direction of the external magnetic field, and has a larger resistance change rate than the previously discovered and practically applied AMR element, and at the same time relative to the Hall element.
  • GMR components have better temperature stability.
  • the current sensor with the MTJ component as the sensitive component has better temperature stability than the Hall current sensor, higher sensitivity, lower power consumption, better linearity, and no additional polymagnetic ring structure;
  • AMR current sensor has better temperature stability, higher sensitivity, wider linear range, no additional set/reset coil structure, better temperature stability and higher sensitivity than GMR current sensor. Lower power consumption, wider linear range.
  • the temperature characteristics of the MTJ current sensor are stronger than those of the Hall element, the AMR element, and the GMR element, there is still temperature drift in actual use.
  • the invention provides a current sensor, which has the MTJ as a sensitive component and can compensate the temperature drift, and has the advantages of high sensitivity, wide linear range, low power consumption, small volume and good temperature characteristics.
  • the present invention provides a current sensor comprising a Wheatstone bridge composed of MTJ magnetoresistors integrated in the same chip and one or more MTJ temperature-compensated magnetoresistors, current wires, and the current wires Close to the Wheatstone bridge and having a current to be measured, the MTJ temperature-compensating magnetoresis is provided with a permanent magnet around the magnetization direction of the free layer of the MTJ temperature-compensating magnetoresistance and the magnetization direction of the pinning layer Anti-parallel to make the MTJ temperature-compensated magnetoresistance in a high-impedance state in which the resistance changes only with temperature within the measurement range, the Wheatstone bridge and the MTJ temperature-compensated magnetoresistance are connected in series to obtain at both ends of the Wheatstone bridge A stable output voltage, and the magnetic field generated by the current to be measured is obtained by the stable output voltage to obtain a measured current value.
  • the MTJ magnetoresistance and the MTJ temperature compensated magnetoresistance are formed by connecting one or more MTJ elements in series, and the plurality of MTJ elements have the same temperature characteristic, R H value, and RL value.
  • the Wheatstone bridge is a Wheatstone half bridge.
  • the Wheatstone bridge is a Wheatstone full bridge.
  • the present invention adopts the above structure, and the current sensor capable of compensating for temperature drift has the advantages of high sensitivity, wide linear range, low power consumption, small volume, and good temperature characteristics.
  • FIG. 1 is a schematic diagram of a tunnel junction magnetoresistive element (MTJ).
  • MTJ tunnel junction magnetoresistive element
  • Fig. 2 is a schematic diagram showing the magnetoresistance change curve of the MTJ element along the difficult axis direction suitable for linear magnetic field measurement.
  • Figure 3 is a conceptual diagram of the MTJ elements 1 connected in series to form an equivalent MTJ magnetoresistance.
  • Figure 4 is a graph showing the magnetoresistance of MTJ magnetoresistance at different temperatures.
  • Figure 5 is a conceptual diagram of a MTJ Wheatstone push-pull half bridge.
  • Figure 6 is a typical output diagram of the MTJ push-pull half bridge.
  • Figure 7 shows the simulation results of the MTJ push-pull half-bridge output at different temperatures.
  • Figure 8 is a conceptual diagram of a MTJ Wheatstone push-pull full bridge.
  • Figure 9 is a typical output diagram of the MTJ push-pull full bridge.
  • Figure 10 shows the simulation results of the output of the MTJ push-pull full bridge at different temperatures.
  • Figure 11 is a conceptual diagram of an MTJ push-pull half-bridge current sensor chip with temperature compensation resistors.
  • Figure 12 is a conceptual diagram of another MTJ push-pull half-bridge current sensor chip with temperature compensation resistors.
  • Figure 13 is a conceptual diagram of an MTJ push-pull full-bridge current sensor chip with temperature compensation resistors.
  • Figure 14 shows the test results of the temperature coefficient of the MTJ push-pull bridge current sensor before and after the addition of the temperature-compensated resistor under different magnetic fields.
  • FIG. 1 is a simplified conceptual diagram of a MTJ multilayer membrane element.
  • An MTJ element 1 generally includes an upper ferromagnetic layer or a synthetic antiferromagnetic layer (SAF) 5, and a lower ferromagnetic layer or SAF layer 3, and a tunnel barrier layer 4 between the two magnetic layers.
  • the upper ferromagnetic layer and the (SAF layer) 5 constitute a magnetic free layer whose magnetization direction changes as the external magnetic field changes.
  • the lower ferromagnetic layer (SAF layer) 3 is a fixed magnetic layer because its magnetization direction is pinned in one direction and does not change under normal conditions.
  • the pinning layer typically deposits a ferromagnetic layer or a SAF layer above or below the antiferromagnetic layer 2.
  • the MTJ structure is typically deposited over the electrically conductive seed layer 10 while the electrode layer 6 is above the MTJ structure.
  • the measured resistance value 11 between the seed layer 10 of the MTJ and the protective layer 6 represents the relative magnetization direction of the free layer 5 and the pinned layer 3.
  • the resistance 11 of the entire element is in a low resistance state.
  • the resistance 11 of the entire element is in a high resistance state.
  • Fig. 2 is a graph showing the magnetoresistance change curve of the MTJ element 1 suitable for linear magnetic field measurement.
  • the output curve saturates in the low resistance state 12 and the high resistance state 13 resistance.
  • the resistance of the MTJ element 1 is a low resistance state 12; when the pinning layer magnetization direction 8 and the free layer magnetization direction 7 are antiparallel, the resistance of the MTJ element 1
  • the value is high impedance state 13.
  • the output curve is linearly dependent on the applied magnetic field H before saturation is reached.
  • FIG. 3 is a schematic diagram of the MTJ elements 1 connected in series to form an equivalent MTJ magnetoresistance.
  • the MTJ magnetoresistors connected in series can reduce noise and improve the stability of the sensor.
  • the bias voltage of each MTJ element 1 decreases as the number of magnetic tunnel junctions increases. The reduction in current requires a large voltage to reduce the shot noise. As the number of magnetic tunnel junctions increases, the ESD stability of the sensor is also enhanced.
  • the noise of the MTJ magnetoresistance decreases correspondingly because the uncorrelated random behavior of each individual MTJ element 1 is averaged off.
  • Figure 4 is a graph showing the magnetoresistance of MTJ magnetoresistance at different temperatures. It can be clearly seen that with the increase of temperature, the resistance of MTJ magnetoresistance is not obvious in the low resistance state, and the high resistance state is obviously reduced. Phenomenon, in general, the resistance of the MTJ magnetoresistance decreases as the temperature rises.
  • FIG. 5 is a conceptual diagram of a MTJ Wheatstone push-pull half bridge.
  • the magnetization directions 8 of the two MTJ magnetoresistors R1 and R2 are anti-parallel, the magnetization direction of the free layer is changed with the external field, and the constant voltage Vbias is applied to the pad V bias terminal and the GND terminal.
  • V OUT is the output.
  • the magnetic field component in the sensitive direction 9 increases the resistance of the magnetoresistance R1 and the resistance of R2 decreases. Applying the external field in the opposite direction reduces the resistance of R1.
  • the resistance of R2 will increase, and the typical output curve of the push-pull half-bridge is shown in Figure 6.
  • Figure 7 shows the simulation results of the MTJ push-pull half-bridge output at different temperatures. As shown, the output voltage of the half-bridge circuit decreases as the temperature increases.
  • Figure 8 is a conceptual diagram of a MTJ Wheatstone push-pull full bridge. As shown in the figure, four MTJ magnetoresistors Rll, R12, R21, and R22 are connected in a full bridge. The constant voltage Vbias is applied to the pad V bias and GND terminals, and the pads V+ and V- are outputs.
  • the magnetization direction of the free layer magnetization of the magnetoresistance varies with the external field, and the magnetoresistance R11 of the relative position is the same as the magnetization direction 8 of the pinning layer of R22 (R12 and R21), and the adjacent magnetic resistances R11 and R12 (R11 and R21, etc.)
  • the magnetization direction 8 of the pinning layer is anti-parallel, and the sensitive direction 9 of the bridge circuit is parallel or anti-parallel to the magnetization direction 8 of the pinning layer.
  • the magnetic field component in the sensitive direction 9 increases the resistance values of the relative positions of the magnetoresistors R11 and R22 while the resistance values of the other two magnetoresistors R12 and R21 at the relative positions correspond. Decreasing the ground, changing the direction of the external field will reduce the resistance of R11 and R22, and the resistance of R12 and R21 will increase accordingly.
  • the combination of two pairs of magnetoresistors will measure the external field with opposite response - a pair of resistance increases. Another pair of lowering values can increase the sensitive output of the bridge circuit and is therefore referred to as a "push-pull" bridge circuit.
  • the voltage at its output is:
  • the output of the bridge circuit is defined as: (4)
  • the magnetoresistance change function of the MTJ magnetoresistance is:
  • Figure 10 shows the simulation results of the output of the MTJ push-pull full bridge at different temperatures. As shown, the full bridge circuit will have a correspondingly lower output voltage as the temperature increases.
  • a temperature compensation resistor can be set to compensate for temperature drift.
  • FIG 11 is a conceptual diagram of an MTJ push-pull half-bridge current sensor chip with a temperature compensation resistor R T ( 16).
  • the half bridge circuit 14 is connected in series with the temperature compensation resistor 16.
  • the permanent magnet 17 provided with a strong magnetic field around the temperature compensation resistor 16 biases the free layer magnetization direction 7 so as to be in the magnetization direction 8 of the pinning layer.
  • the anti-parallel is in the high-resistance state 13 and is insensitive to the external field.
  • the resistance value 11 varies only with temperature within the measurement range.
  • the wire 20 is disposed in the chip, and the current to be tested 19 flows into the chip through the pad Iin+, and then passes through the pad Iin.
  • the magnetoresistive half-bridge circuit 14 passes the magnetic field 21 generated by the sensitive measured current 19 to measure the current to be measured.
  • the temperature compensation resistor 16 can be calculated according to the resistance values of the half bridge arm resistances R1 and R2 and the temperature coefficient. When the magnetoresistance changes with temperature, the resistance values of the temperature compensation resistor and the half bridge circuit are simultaneously reduced or increased. High, the voltage applied across the bridge will not change greatly, thus compensating for temperature drift.
  • Figure 12 is a conceptual diagram of another MTJ push-pull half-bridge current sensor chip with temperature compensation resistor R T ( 16).
  • the pinning layer magnetization directions 8 of the bridge arm resistors R1 and R2 are the same, the free layer magnetization direction 7 varies with the external field, and the half bridge circuit 14 is connected in series with the temperature compensation resistor 16, and the periphery of the temperature compensation resistor 16 is strong.
  • Magnetic field permanent magnet 17 bias
  • the magnetization direction of the free layer is 7, which is antiparallel to the magnetization direction 8 of the pinning layer in a high resistance state 13 and is insensitive to the external field.
  • the resistance value 11 varies only with temperature within the measurement range, and the current to be tested 19 passes through the pad.
  • Iin+ enters, lin-flows out, and the built-in U-shaped wire 20 is located above or below the bridge arm resistors R1 and R2.
  • the half-bridge circuit 14 passes the magnetic field 21 generated by the sensitive current 19 to measure the current to be measured.
  • Figure 13 is a conceptual diagram of an MTJ push-pull full-bridge current sensor chip with temperature compensation resistor R T ( 16 ). As shown in the figure, four MTJ magnetoresistors Rll, R12, R21, and R22 form a Wheatstone full bridge in series with a temperature-compensated resistor R T ( 16 ), and the pinning layers of the four MTJ magnetoresistors have the same magnetization direction of the same free layer magnetization.
  • the direction 7 varies with the external field
  • Sensitive its resistance value 11 varies only with temperature within the measurement range.
  • a U-shaped wire 20 is arranged in the chip, and the current to be tested 19 flows into the chip through the pad Iin+, and then flows out through the pad lin-, the magnetic resistance full-bridge circuit 14
  • the magnetic field 21 generated by the sensitive current 19 is used to measure the current to be measured.
  • V OUT (T) The output of the bridge circuit, V OUT (T), and the actual output value, V OUT , can be fitted to a linear function as a function of temperature:
  • Vour(T Fow(l + krAT) (8)
  • k T is the temperature coefficient of the output voltage
  • the commonly used Hall current sensor has a temperature coefficient k T of several thousand PPM/°C.
  • Figure 14 shows the test results of the temperature coefficient of the MTJ push-pull bridge current sensor before and after the temperature compensation resistor is added in different magnetic fields. We can clearly see that after setting the temperature compensation resistor, the temperature coefficient is greatly reduced, and the temperature compensation effect is very high. obvious.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)

Abstract

一种电流传感器，包括集成设置在同一芯片内的由MTJ磁电阻（R11，R12，R21，R22）组成的惠斯通电桥（14）、MTJ温度补偿磁电阻（16）以及电流导线（20）。电流导线（20）靠近惠斯通电桥（14）并且其中可通有被测电流（19）。MTJ温度补偿磁电阻（16）四周设置有永磁体（17），该永磁体（17）将MTJ温度补偿磁电阻（16）的自由层的磁化方向（7）与钉扎层的磁化方向（8）呈反向平行以使MTJ温度补偿磁电阻（16）处于阻值在测量范围内仅随温度变化的高阻态。惠斯通电桥（14）和MTJ温度补偿磁电阻（16）相串联以在惠斯通电桥（14）的两端得到稳定的输出电压，通过该稳定的输出电压得到被测电流（19）产生的磁场（21）从而得到被测电流值。采用以上结构的电流传感器能对温度漂移进行补偿，具有灵敏度高，线性范围宽，功耗低，温度特性好的优点。

Description

一种电流传感器 技术领域
本发明涉及一种电流传感器， 尤其是一种采用隧道结磁电阻为敏感元件的含温度补偿 磁电阻的电流传感器。
背景技术
常用的电流传感器通常采用霍尔元件为敏感元件， 也有采用各向异性磁电阻 （AMR) 或巨磁电阻（GMR)为敏感元件的电流传感器， 其共同点在于都是属于磁敏感元件， 通过 敏感被测通电导线产生的磁场来实现对其电流大小的测量。
霍尔元件的灵敏度极低， 以霍尔元件为敏感元件的电流传感器通常使用聚磁环结构来 放大磁场， 提高霍尔输出灵敏度， 从而增加了传感器的体积和重量， 同时霍尔元件具有功 耗大， 线性度差的缺陷。 AMR元件虽然其灵敏度比霍尔元件高很多， 但是其线性范围窄， 同时以 AMR为敏感元件的电流传感器需要设置 set/reset线圈对其进行预设 -复位操作， 造 成其制造工艺的复杂， 线圈结构的设置在增加尺寸的同时也增加了功耗。 以 GMR元件为 敏感元件的电流传感器较之霍尔电流传感器有更高的灵敏度， 但是其线性范围偏低。
隧道结磁电阻 （MTJ, Magnetic Tunnel Junction) 元件是近年来开始工业应用的新型磁 电阻效应传感器， 其利用的是磁性多层膜材料的隧道磁电阻效应 （TMR, Tunnel Magnetoresistance), 主要表现在磁性多层膜材料中随着外磁场大小和方向的变化， 磁性多 层膜材料的电阻发生明显变化， 比之前所发现并实际应用的 AMR元件具有更大的电阻变 化率， 同时相对于霍尔元件和 GMR元件具有更好的温度稳定性。 以 MTJ元件为敏感元件 的电流传感器比霍尔电流传感器具有更好的温度稳定性， 更高的灵敏度， 更低的功耗， 更 好的线性度， 不需要额外的聚磁环结构； 相对于 AMR电流传感器具有更好的温度稳定性， 更高的灵敏度， 更宽的线性范围， 不需要额外的 set/reset线圈结构； 相对于 GMR电流传 感器具有更好的温度稳定性， 更高的灵敏度， 更低的功耗， 更宽的线性范围。
MTJ电流传感器的温度特性虽然强于以霍尔元件、 AMR元件和 GMR元件为敏感元件 的电流传感器， 但是在实际使用中依然存在温度漂移现象。
发明内容 本发明提供了一种电流传感器， 以 MTJ为敏感元件， 且能对温度漂移进行补偿的电流 传感器， 具有灵敏度高， 线性范围宽， 功耗低， 体积小， 温度特性好的优点。
为达到上述目的， 本发明提供了一种电流传感器， 包括集成设置在同一芯片内的由 MTJ磁电阻组成的惠斯通电桥以及一个或多个 MTJ温度补偿磁电阻、 电流导线， 所述电 流导线靠近惠斯通电桥并且其中可通有被测电流，所述 MTJ温度补偿磁电阻四周设置有永 磁体，该永磁体将 MTJ温度补偿磁电阻的自由层的磁化方向与钉扎层的磁化方向呈反向平 行以使 MTJ温度补偿磁电阻处于阻值在测量范围内仅随温度变化的高阻态，所述惠斯通电 桥和 MTJ温度补偿磁电阻相串联以在惠斯通电桥的两端得到稳定的输出电压，并且通过该 稳定的输出电压得到被测电流产生的磁场从而得到被测电流值。
优选地， 所述 MTJ磁电阻和 MTJ温度补偿磁电阻由一个或多个 MTJ元件串联而成， 多个 MTJ元件具有相同的温度特性、 RH值以及 RL值。
优选地， 惠斯通电桥为惠斯通半桥。
优选地， 所述惠斯通电桥为惠斯通全桥。
本发明采用以上结构， 能对温度漂移进行补偿的电流传感器， 具有灵敏度高， 线性范 围宽， 功耗低， 体积小， 温度特性好的优点。
附图说明
图 1是隧道结磁电阻元件 （MTJ) 的示意图。
图 2是适用于线性磁场测量的 MTJ元件沿难轴方向的磁阻变化曲线示意图。
图 3是 MTJ元件 1串联而形成一个等效 MTJ磁电阻的概念图。
图 4是不同温度下 MTJ磁电阻的磁阻变化曲线图。
图 5是一种 MTJ惠斯通推挽半桥的概念图。
图 6是 MTJ推挽半桥的典型输出图。
图 7是 MTJ推挽半桥在不同温度下的输出的模拟结果。
图 8是一种 MTJ惠斯通推挽全桥的概念图。
图 9是 MTJ推挽全桥的典型输出图。
图 10是 MTJ推挽全桥在不同温度下的输出的模拟结果。
图 11是一种含温度补偿电阻的 MTJ推挽半桥电流传感器芯片的概念图。 图 12是另一种含温度补偿电阻的 MTJ推挽半桥电流传感器芯片的概念图。
图 13是一种含温度补偿电阻的 MTJ推挽全桥电流传感器芯片的概念图。
图 14是不同磁场下增加温补电阻前后 MTJ推挽桥式电流传感器温度系数的测试结果。 具体实施方式
图 1是一个 MTJ多层膜元件的功能概念简图。 一个 MTJ元件 1一般包括上层的铁磁 层或人工反铁磁层 （Synthetic Antiferromagnetic, SAF) 5， 以及下层的铁磁层或 SAF层 3， 两个磁性层之间的隧道势垒层 4。 在这种结构中， 上层的铁磁层和 （SAF层） 5组成了磁 性自由层， 其磁化方向随外部磁场的改变而变化。 下层的铁磁层 （SAF层） 3是一个固定 的磁性层， 因为其磁化方向是钉扎在一个方向， 在一般条件下是不会改变的。 钉扎层通常 是在反铁磁性层 2的上方或下方沉积铁磁层或 SAF层。 MTJ结构通常是沉积在导电的种子 层 10的上方， 同时 MTJ结构的上方为电极层 6。 MTJ的种子层 10和保护层 6之间的测量 电阻值 11代表自由层 5和钉扎层 3的相对磁化方向。 当上层的铁磁层（SAF层） 5的磁化 方向与下层的铁磁层 3的磁化方向平行时，整个元件的电阻 11在低阻态。当上层的铁磁层 (SAF层） 5的磁化方向与下层的铁磁层 3的磁化方向反平行时， 整个元件的电阻 11在高 阻态。通过已知的技术， MTJ元件 1的电阻可随着外加磁场在高阻态和低阻态间线性变化。
图 2是适用于线性磁场测量的 MTJ元件 1的磁阻变化曲线示意图。输出曲线在低阻态 12和高阻态 13的阻值时饱和。 当钉扎层磁化方向 8和自由层磁化方向 7平行时， MTJ元 件 1的阻值为低阻态 12; 当钉扎层磁化方向 8和自由层磁化方向 7反平行时， MTJ元件 1 的阻值为高阻态 13。 在达到饱和之前， 输出曲线是线性依赖于外加磁场 H。 输出曲线通常 不与 H=0的点对称， H。是饱和场 21、 22之间的典型偏移， 低阻态 12对应的饱和区域更 接近 H=0 的点， H。的值通常被称为 "桔子皮效应 （Orange Peel)"或 "奈尔耦合 （Neel Coupling)", 其典型值通常在 1到 25 Oe之间， 与 MTJ元件 1中铁磁性薄膜的结构和平整 度有关， 依赖于材料和制造工艺。 在不饱和区域， 输出曲线方程可以近似为：
辆 、 Η— Η (1)
图 3是 MTJ元件 1串联而形成一个等效 MTJ磁电阻的示意图。 串联起来的 MTJ磁电 阻能降低噪声， 提高传感器的稳定性。 在 MTJ磁电阻中， 每个 MTJ元件 1的偏置电压随 磁隧道结数量的增加而降低。 电流的降低需要产生一个大的电压， 从而降低了散粒噪声， 随着磁隧道结的增多同时也增强了传感器的 ESD稳定性。 此外， 随着 MTJ元件 1数量的 增多 MTJ磁电阻的噪声相应地降低， 这是因为每一个独立的 MTJ元件 1的互不相关的随 机行为被平均掉。
图 4是不同温度下 MTJ磁电阻的磁阻变化曲线图， 可以清楚地看到随着温度的升高， MTJ磁电阻的阻值在低阻态的变化不明显， 高阻态有明显的降低现象， 总体而言， MTJ磁 电阻的阻值随温度的上升而降低。
图 5是一种 MTJ惠斯通推挽半桥的概念图。 如图所示， 两个 MTJ磁电阻 Rl、 R2的 钉扎层磁化方向 8反平行， 自由层磁化方向 7随外场变化， 稳恒电压 Vbias施加于焊盘 Vbias 端和 GND端， 焊盘 VOUT为输出端。 当对推挽半桥传感器施加一外场时， 沿敏感方向 9的 磁场分量， 磁电阻 R1的阻值增加的同时 R2的阻值会随之降低， 施加相反方向的外场会使 R1的阻值降低的同时 R2的阻值会随之增加， 推挽半桥的典型输出曲线如图 6所示。
图 7是 MTJ推挽半桥在不同温度下的输出的模拟结果。如图所示， 半桥电路随着温度 的升高其输出电压会相应地降低。
图 8是一种 MTJ惠斯通推挽全桥的概念图。 如图所示， 四个 MTJ磁电阻 Rll、 R12、 R21、 R22以全桥形式连接， 稳恒电压 Vbias施加于焊盘 Vbias端和 GND端， 焊盘 V+和 V- 为输出端，四个磁电阻的自由层磁化方向 7随外场变化，相对位置的磁电阻 R11和 R22(R12 和 R21 ) 的钉扎层磁化方向 8相同， 相邻位置的磁电阻 R11和 R12 (R11和 R21等） 的钉 扎层磁化方向 8反平行， 桥式电路的敏感方向 9与钉扎层磁化方向 8平行或反平行。
当对推挽全桥传感器施加一外场时，沿敏感方向 9的磁场分量使相对位置的磁电阻 R11 和 R22阻值增加的同时另外两个处于相对位置的磁电阻 R12和 R21的阻值会相应地减小， 改变外场的方向会使 R11和 R22阻值减小的同时 R12和 R21的阻值会相应地增加， 使用 两对磁电阻的组合测量外场有相反的响应——一对阻值增加另一对阻值降低一一可以增 加桥式电路的灵敏输出， 因此被称为 "推挽式 "桥式电路。 其输出端的电压为：
Figure imgf000006_0001
桥式电路的输出被定义为： (4) 在推挽全桥电路中， MTJ磁电阻的磁阻变化函数为:
Figure imgf000007_0001
即实现推挽全桥的输出， 其输出曲线的模拟结果如图 9所示。
图 10是 MTJ推挽全桥在不同温度下的输出的模拟结果。 如图所示， 全桥电路随着温 度的升高其输出电压会相应地降低。
我们不难看出， MTJ惠斯通桥式电路的温度漂移的原因是因为 MTJ元件阻值的变化 导致其两端电压的变化。对于温度漂移现象，可以设置一个温度补偿电阻对温漂进行补偿。
图 11是一种含温度补偿电阻 RT ( 16) 的 MTJ推挽半桥电流传感器芯片的概念图。 如 图所示， 半桥电路 14与温补电阻 16串联起来， 温补电阻 16的周围设置有强磁场的永磁 体 17偏置其自由层磁化方向 7， 使其与钉扎层磁化方向 8呈反平行处于高阻态 13， 对外 场不敏感， 其阻值 11在测量范围内仅随温度变化， 同时芯片内设置有导线 20， 待测电流 19通过焊盘 Iin+流入芯片， 再经焊盘 Iin-流出， 磁电阻半桥电路 14通过敏感被测电流 19 所产生的磁场 21以测量待测电流。 在理想情况下温补电阻 16可以根据半桥桥臂电阻 Rl、 R2的阻值及温度系数计算得出， 当磁电阻随温度变化时，温补电阻和半桥电路的阻值同时 降低或升高， 施加于电桥两端的电压便不会发生大的变化， 从而实现对温度漂移的补偿。
图 12是另一种含温度补偿电阻 RT ( 16) 的 MTJ推挽半桥电流传感器芯片的概念图。 如图所示， 桥臂电阻 R1和 R2的钉扎层磁化方向 8相同， 自由层磁化方向 7随外场变化， 半桥电路 14与温补电阻 16串联起来， 温补电阻 16的周围设置有强磁场的永磁体 17偏置 其自由层磁化方向 7， 使其与钉扎层磁化方向 8呈反平行处于高阻态 13， 对外场不敏感， 其阻值 11在测量范围内仅随温度变化， 待测电流 19经焊盘 Iin+进入， lin-流出， 芯片内置 的 U型导线 20位于桥臂电阻 R1和 R2的上方或下方， 半桥电路 14通过敏感电流 19所产 生的磁场 21以测量待测电流。
图 13是含温度补偿电阻 RT ( 16 ) 的 MTJ推挽全桥电流传感器芯片的概念图。 如图所 示， 四个 MTJ磁电阻 Rll、 R12、 R21、 R22组成惠斯通全桥与温补电阻 RT ( 16 ) 串联， 四个 MTJ磁电阻的钉扎层磁化方向 8相同自由层磁化方向 7随外场变化， 温补电阻 16的 周围设置有强磁场的永磁体 17偏置其自由层磁化方向 7，使其与钉扎层磁化方向 8呈反平 行处于高阻态 13， 对外场不敏感， 其阻值 11在测量范围内仅随温度变化， 同时芯片内设 置有 U型导线 20， 待测电流 19通过焊盘 Iin+流入芯片， 再经焊盘 lin-流出， 磁电阻全桥 电路 14通过敏感电流 19所产生的磁场 21以测量待测电流。
电桥电路的输出 VOUT(T)和实际输出值 VOUT随温度变化可以拟合成线性函数：
Vour(T = Fow(l + krAT) (8)
其中 kT是输出电压的温度系数， 常用的霍尔电流传感器的温度系数 kT为几千 PPM/°C。 图 14是不同磁场下增加温补电阻前后 MTJ推挽桥式电流传感器温度系数的测试结果， 我们 可以清楚的看到， 在设置温补电阻后， 其温度系数极大地减小， 温补效果很明显。
以上对本发明的特定实施例结合图示进行了说明， 很明显， 在不离开本发明的范围和 精神的基础上， 可以对现有技术和工艺进行很多修改。 在本发明的所属技术领域中， 只要 掌握通常知识， 就可以在本发明的技术要旨范围内， 进行多种多样的变更。

Claims

权利要求书
1. 一种电流传感器， 其特征在于： 包括集成设置在同一芯片内的由 MTJ磁电阻组成 的惠斯通电桥以及一个或多个 MTJ温度补偿磁电阻、 电流导线，所述电流导线靠近惠斯通 电桥并且其中可通有被测电流，所述 MTJ温度补偿磁电阻四周设置有永磁体， 该永磁体将 MTJ温度补偿磁电阻的自由层的磁化方向与钉扎层的磁化方向呈反向平行以使 MTJ温度 补偿磁电阻处于阻值在该电流传感器的测量范围内仅随温度变化的高阻态， 所述惠斯通电 桥和 MTJ温度补偿磁电阻相串联以在惠斯通电桥的两端得到稳定的输出电压，该电流传感 器通过惠斯通电桥的两端的输出电压得到被测电流产生的磁场从而得到被测电流值。
2. 根据权利要求 1所述的电流传感器， 其特征在于： 所述 MTJ磁电阻和 MTJ温度补 偿磁电阻由一个或多个 MTJ元件串联而成， 多个 MTJ元件具有相同的温度特性、 RH值以 及 R 值。
3. 根据权利要求 1所述的电流传感器， 其特征在于： 所述惠斯通电桥为惠斯通半桥。
4. 根据权利要求 1所述的电流传感器， 其特征在于： 所述惠斯通电桥为惠斯通全桥。
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CN102419393B (zh) 2013-09-04
EP2801834A1 (en) 2014-11-12
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