WO2013176324A1 - Film mince conducteur transparent comportant une pluralité de couches conductrices mélangées comprenant une nanostructure métallique et un polymère conducteur, et son procédé de fabrication - Google Patents

Film mince conducteur transparent comportant une pluralité de couches conductrices mélangées comprenant une nanostructure métallique et un polymère conducteur, et son procédé de fabrication Download PDF

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Publication number
WO2013176324A1
WO2013176324A1 PCT/KR2012/004173 KR2012004173W WO2013176324A1 WO 2013176324 A1 WO2013176324 A1 WO 2013176324A1 KR 2012004173 W KR2012004173 W KR 2012004173W WO 2013176324 A1 WO2013176324 A1 WO 2013176324A1
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WO
WIPO (PCT)
Prior art keywords
thin film
conductive thin
conductive
transparent conductive
conductive polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/004173
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English (en)
Korean (ko)
Inventor
김중현
김병욱
이선종
김선영
김정훈
김세열
김소연
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KOREA NTCHEM CO Ltd
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KOREA NTCHEM CO Ltd
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Filing date
Publication date
Application filed by KOREA NTCHEM CO Ltd filed Critical KOREA NTCHEM CO Ltd
Publication of WO2013176324A1 publication Critical patent/WO2013176324A1/fr
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H05K1/095—Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0393—Flexible materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0104—Properties and characteristics in general
    • H05K2201/0108—Transparent
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0242—Shape of an individual particle
    • H05K2201/0257—Nanoparticles

Definitions

  • the conductive polymer layer prevents the reaction of the conductive film including the metal nano-body with moisture in the air, thereby improving moisture resistance and chemical resistance, and thereby preventing deterioration of electrical properties such as electrical conductivity.
  • 3 (a) is a sheet resistance modeling of a transparent conductive thin film made of a transparent substrate and a metal nanostructure thin film thereon.
  • 3 (b) is a sheet resistance modeling of a transparent conductive thin film composed of a transparent substrate, a mixed conductive thin film made of a metal nanostructure and a conductive polymer, and a conductive polymer layer.
  • 3 (c) is a sheet resistance modeling of the transparent conductive thin film of the present invention comprising a plurality of mixed conductive thin films made of a metal nanostructure and a conductive polymer, and a conductive polymer layer on a transparent substrate.
  • FIG. 4 (b) is experimental data of transmittance, sheet resistance, and sheet resistance of the transparent conductive thin film composed of the transparent substrate, the metal nanostructure, the conductive polymer, and the transparent conductive thin film.
  • FIG. 4 (c) shows experimental data of transmittance, sheet resistance, and sheet resistance variation of the transparent conductive thin film of the present invention comprising a plurality of mixed conductive thin films made of a metal nanostructure and a conductive polymer, and a conductive polymer layer on a transparent substrate.
  • FIG. 5 (a) is an experimental result of the sheet resistance change with time of the transparent conductive thin film made of a transparent substrate and a metal nanostructure thin film thereon.
  • FIG. 5 (b) is an experimental result of the sheet resistance change with time of the transparent conductive film, the mixed conductive thin film made of the metal nanostructure and the conductive polymer, and the transparent conductive thin film made of the conductive polymer layer.
  • Transparent conductive thin film of multi-layer structure 100 Transparent substrate
  • r3 resistance formed by a conductive polymer between metal nanostructures when a plurality of metal nanostructure thin films are employed
  • the metal nanostructure 400 and the conductive polymer 500 are not limited to a specific material, and the metal constituting the metal nanostructure 400 may be gold, silver, copper, iron, nickel, zinc, indium, tin, It may be made of any one or a combination of two or more selected from antimony, magnesium, cobalt, lead, platinum, titanium, tungsten, germanium, aluminum, the shape is nanoribbon (nanoribbon), nanorod (nanorod), nanowire (nanowire) It may be configured to include at least one of, or nanoparticles (nanosphere).
  • the transparent conductive thin film 1 of the present invention consisting of a plurality of mixed conductive thin films, a conductive polymer layer on the transparent substrate 100, which is coated with a plurality of thin layers, annealing the thin film Therefore, since the aggregation of the metal nanostructure 400 occurs less, the metal nanostructure 400 is relatively evenly distributed, and the distance between the metal nanostructures 400 is relatively short, so that the length of the conductive polymer 500 connecting the metal nanostructure 400 is also short. It has a relatively short structure.
  • FIG. 5 is a sheet resistance with time of a transparent conductive film composed of (a) a single metal nanostructure thin film, (b) a single mixed conductive thin film and a conductive polymer layer, (c) a plurality of mixed conductive thin films and a conductive polymer layer.
  • Experimental results for the change of which are the experimental results for the transparent conductive thin film prepared according to Examples 1, 2 and 3 to be described later.
  • the thicknesses of the samples (a), (b), and (c) were selected to have a sheet resistance of about 65 ⁇ / ⁇ .
  • FIG. 5 (b) shows a smaller sheet resistance change than that of FIG. 5 (a), and the case of FIG.
  • FIG. 5 (c) is smaller than that of FIG. 5 (a) and FIG. 5 (b) when left in the air. It can be seen that the sheet resistance changes. After the same 96 hours, Fig. 5 (a) shows a change in sheet resistance of about 30 ⁇ / ⁇ , while Fig. 5 (b) shows a smaller sheet resistance change of about 10 ⁇ / ⁇ , and Fig. 5 (c) shows the change in sheet resistance. There is little change, and it can be seen that the thin film is much more stable than FIGS. 5 (a) and 5 (b).
  • a glass substrate having a thickness of 500 ⁇ m was prepared as a transparent substrate, and impurities were removed from the surface using acetone and isopropanol, and then the surface of the glass substrate was modified to be hydrophilic through plasma treatment.
  • the conductive polymer composition was prepared by PEDOT: PSS [Poly (3,4-ethylenedioxythiophene); poly (styrenesulfonate)] to the aqueous solution, based on the weight of the aqueous solution, 5% by weight of ethylene glycol (ethylene glycol) and 300% by weight of N-methylpyrrolidone are sequentially added, and then uniformly mixed for about 5 hours to conduct conductivity A polymer composition was prepared.
  • the light transmittance was measured using the same UV-Visible spectrophotometer (UV-1601PC of SHIMADZU Co., Ltd.) under the same measurement conditions as in Experiment 1 to measure the transmittance of light having a wavelength of 550 nm. At this time, the transmittance of the transparent substrate was set to 100% and the transmittance after coating was expressed as a ratio.
  • the sheet resistance was measured using a 4-point prove method conductivity meter (NAPSON RT-70), and the stability of the membrane was measured by changing the sheet resistance every 12 hours in contact with the air at room temperature.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Laminated Bodies (AREA)
  • Non-Insulated Conductors (AREA)
PCT/KR2012/004173 2012-05-23 2012-05-25 Film mince conducteur transparent comportant une pluralité de couches conductrices mélangées comprenant une nanostructure métallique et un polymère conducteur, et son procédé de fabrication Ceased WO2013176324A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2012-0054512 2012-05-23
KR1020120054512A KR101263194B1 (ko) 2012-05-23 2012-05-23 금속 나노구조체와 전도성 고분자로 이루어진 복수개의 혼합 도전층을 포함하는 투명 전도성 박막 및 이의 제조방법.

Publications (1)

Publication Number Publication Date
WO2013176324A1 true WO2013176324A1 (fr) 2013-11-28

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PCT/KR2012/004173 Ceased WO2013176324A1 (fr) 2012-05-23 2012-05-25 Film mince conducteur transparent comportant une pluralité de couches conductrices mélangées comprenant une nanostructure métallique et un polymère conducteur, et son procédé de fabrication

Country Status (2)

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KR (1) KR101263194B1 (fr)
WO (1) WO2013176324A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111416058A (zh) * 2020-04-03 2020-07-14 苏州星烁纳米科技有限公司 一种导电薄膜、显示装置和显示装置的制作方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101385684B1 (ko) 2013-05-16 2014-04-16 율촌화학 주식회사 투명 전극의 제조방법
KR20150034993A (ko) * 2013-09-27 2015-04-06 주식회사 동진쎄미켐 금속 나노와이어를 함유하는 전도성 코팅 조성물 및 이를 이용한 전도성 필름의 형성방법
KR101595895B1 (ko) 2014-08-11 2016-02-19 주식회사 엔앤비 광소결로 접합된 은 나노와이어를 포함하는 투명전극용 필름, 광소결을 이용한 은 나노와이어 접합용 분산액 및 은 나노와이어의 접합 방법
WO2016024793A2 (fr) * 2014-08-11 2016-02-18 주식회사 엔앤비 Procédé de fabrication d'un film transparent conducteur d'électricité par irradiation de lumière à étages multiples
KR101685069B1 (ko) * 2016-04-01 2016-12-09 금오공과대학교 산학협력단 패턴이 형성된 플렉서블 투명전극의 제조방법
KR101932584B1 (ko) * 2016-11-23 2018-12-27 금오공과대학교 산학협력단 구조 일체형 플렉서블 투명전극 및 이의 제조방법
KR101705583B1 (ko) * 2016-11-30 2017-02-13 금오공과대학교 산학협력단 패턴이 형성된 플렉서블 투명전극의 제조방법
KR101919767B1 (ko) * 2016-11-30 2018-11-19 금오공과대학교 산학협력단 투명전극의 제조방법
KR102005262B1 (ko) * 2017-08-21 2019-07-31 금오공과대학교 산학협력단 패턴이 형성된 플렉서블 투명전극의 제조방법

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KR20110051309A (ko) * 2009-11-10 2011-05-18 이동혁 다층구조 ITO(Indium Tin Oxide) 적층 제조 방법
KR20110085051A (ko) * 2010-01-19 2011-07-27 한국과학기술연구원 금속산화물 나노입자를 이용한 적층형 고분자 태양전지 및 그 제조방법
KR20110105048A (ko) * 2010-03-18 2011-09-26 삼성코닝정밀소재 주식회사 투명 도전막, 그를 포함하는 디스플레이 필터 및 태양전지
KR20110130261A (ko) * 2010-05-27 2011-12-05 순천대학교 산학협력단 투명전도막의 구조 및 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110051309A (ko) * 2009-11-10 2011-05-18 이동혁 다층구조 ITO(Indium Tin Oxide) 적층 제조 방법
KR20110085051A (ko) * 2010-01-19 2011-07-27 한국과학기술연구원 금속산화물 나노입자를 이용한 적층형 고분자 태양전지 및 그 제조방법
KR20110105048A (ko) * 2010-03-18 2011-09-26 삼성코닝정밀소재 주식회사 투명 도전막, 그를 포함하는 디스플레이 필터 및 태양전지
KR20110130261A (ko) * 2010-05-27 2011-12-05 순천대학교 산학협력단 투명전도막의 구조 및 제조방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111416058A (zh) * 2020-04-03 2020-07-14 苏州星烁纳米科技有限公司 一种导电薄膜、显示装置和显示装置的制作方法
CN111416058B (zh) * 2020-04-03 2024-04-19 苏州星烁纳米科技有限公司 一种导电薄膜、显示装置和显示装置的制作方法

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