WO2013176475A1 - Appareil de dépôt de vapeur organique - Google Patents

Appareil de dépôt de vapeur organique Download PDF

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Publication number
WO2013176475A1
WO2013176475A1 PCT/KR2013/004461 KR2013004461W WO2013176475A1 WO 2013176475 A1 WO2013176475 A1 WO 2013176475A1 KR 2013004461 W KR2013004461 W KR 2013004461W WO 2013176475 A1 WO2013176475 A1 WO 2013176475A1
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Prior art keywords
inlet port
source gas
gas inlet
source
high speed
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Ceased
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English (en)
Korean (ko)
Inventor
이명기
이용의
김언정
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Unitex Co Ltd
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Unitex Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to a vapor deposition technique, and more particularly, to a vapor deposition apparatus for forming an organic thin film in a reactor.
  • an organic light emitting diode is manufactured by a vapor deposition method such as chemical vapor deposition (CVD), atomic layer deposition (ALD) or organic vapor deposition (OVPD or condensation coating).
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • OVPD organic vapor deposition
  • the organic vapor deposition apparatus may use a separately provided source container to heat the source material loaded therein to produce a vapor precursor within the source container and to deliver it to the process chamber by a suitable carrier gas.
  • the vapor phase precursor delivered to the process chamber may be delivered to the process processing space of the process chamber through a showerhead or a nozzle unit.
  • the technical problem to be solved by the present invention is to provide a vapor deposition apparatus capable of obtaining a deposition rate suitable for mass production while ensuring uniformity of film formation for a large area substrate.
  • a vapor deposition apparatus including: a chamber body including a substrate support on which a substrate to be deposited by a vapor phase precursor is mounted; A source gas supply flow path including a source gas inlet port for providing a source gas stream at a first flow rate comprising the gaseous precursor on the substrate; And a high velocity gas stream having a second flow rate that is mixed with the source gas stream and has a second flow rate greater than the first flow rate while passing through the end of the source gas inlet port to reduce pressure around the end of the source gas inlet port. It may include at least one high speed gas supply flow path including a gas inlet port.
  • the high velocity gas inlet port is recessed from the end of the source gas inlet port such that at least a portion of the high velocity gas stream discharged from the high velocity gas inlet port flows along an outer wall of the end of the source gas inlet port so that the source gas It may be arranged in contact with the outer wall of the inlet port.
  • the central axis of the source gas inlet port and the high speed gas inlet port may be spaced apart from each other, and the central axis of the high speed gas supply flow paths may be inclined aligned in a downstream direction of the source gas supply flow path. Further, the source gas inlet port and the high speed gas inlet port may be disposed in a groove defined by a surface extending in the direction of the substrate.
  • the central axis of the high velocity gas inlet port may intersect the central axis of the source gas inlet port such that the high velocity gas stream is radially injected towards the substrate. In some embodiments, the central axis of the high speed gas inlet port may be offset such that it does not intersect the central axis of the source gas inlet port to apply rotational force to the source gas stream.
  • the central axis of the source gas inlet port and the central axis of the high speed gas inlet port may be inclined aligned in the direction of the substrate.
  • the high velocity gas inlet port may be arranged radially about the source gas inlet port.
  • the high velocity gas inlet port may be arranged to form a spiral around the source gas inlet port.
  • the central axis of the high speed gas supply flow paths may be offset so as not to intersect the central axis of the source gas supply flow path.
  • the source gas inlet port and the high speed gas inlet port may be disposed and further include a mixing space for mixing the source gas stream and the high speed gas stream.
  • the inner wall defining the mixing space may be inclined to have an opening in which the mixing space gradually extends toward the substrate.
  • a nozzle unit including the source gas inlet port and the high speed gas inlet port may be provided at an upper end of the chamber body.
  • the vapor deposition apparatus may further include: a first gas supply unit configured to provide a source gas in which the gaseous precursor and the carrier gas are mixed through the source gas supply passage; And a second gas supply unit configured to provide a high speed gas through the high speed gas supply passages.
  • the first gas supply portion communicates with the chamber body via the source gas supply flow path, the source container configured to heat a charged source material to form a vapor phase precursor; And a carrier gas container communicating with the source container through a carrier gas inflow passage.
  • the carrier gas and the high velocity gas may comprise the same kind of gas.
  • the vapor deposition apparatus may further include a flow rate controller for adjusting the flow rates of the source gas stream and the high velocity gas stream.
  • a nozzle portion by configuring a nozzle portion to inject a high speed and high velocity gas stream adjacent to a source gas stream comprising a gaseous precursor, a low pressure is generated on a path of the source gas stream, and the pressure difference causes the The flow rate of the source gas stream can be increased to increase deposition rate and improve productivity.
  • Embodiments of the present invention provide vapor deposition in which thin films are formed by condensation mechanisms where fluid flow and kinetic source delivery dominate the film properties, rather than conventional chemical vapor deposition where thin films are deposited at thermal equilibrium. In the case of organic vapor deposition, a thin film and excellent film uniformity can be provided.
  • the nozzle portion is formed such that a plurality of high-speed gas streams are radially sprayed toward the process processing space while crossing the source gas stream, so that the source gas stream is evenly distributed over a large area to uniform the deposition process on a large area substrate.
  • the castle can be secured.
  • FIG. 1 is a cross-sectional view showing a vapor deposition apparatus according to an embodiment of the present invention.
  • FIG. 2 is a perspective view of a nozzle unit of a vapor deposition apparatus according to an embodiment of the present invention.
  • FIG. 3 is a cross-sectional plan view of the nozzle unit illustrated in FIG. 2.
  • FIG. 4A is a cross-sectional view illustrating a nozzle unit according to another exemplary embodiment of the present invention
  • FIG. 4B is a cross-sectional plan view of the nozzle unit illustrated in FIG. 4A.
  • FIG. 5 is a schematic diagram showing an additional configuration of a vapor deposition apparatus according to an embodiment of the present invention.
  • first, second, etc. are used herein to describe various members, parts, regions, layers, and / or parts, these members, parts, regions, layers, and / or parts are defined by these terms. It is obvious that not. These terms are only used to distinguish one member, part, region, layer or portion from another region, layer or portion. Thus, the first member, part, region, layer or portion, which will be discussed below, may refer to the second member, component, region, layer or portion without departing from the teachings of the present invention.
  • FIG. 1 is a cross-sectional view showing a vapor deposition apparatus 100 according to an embodiment of the present invention.
  • the vapor deposition apparatus 100 includes a chamber body 10, a source gas supply flow path 20, and at least one high speed gas supply flow paths 30.
  • the source gas supply flow path 20 and the high speed gas supply flow paths 30 communicate the external source supply sources (not shown) with the chamber body 10.
  • the source gas introduction port 20P of the source gas supply flow path 20 and the high speed gas introduction port 30P of the high speed gas supply flow paths 30 are disposed on the upper side of the chamber main body 10 to constitute the nozzle portion N. do.
  • the source gas inlet port 20P and the high speed gas inlet port 30P may have various shapes such as through holes or nozzles.
  • the vapor deposition apparatus 100 may be, for example, a vapor deposition apparatus for manufacturing a semiconductor device, such as a memory or logic circuit, in which a device layer is formed by deposition of a vapor or a reaction product thereof generated from a liquid or solid source material, or organic. It can be applied to a vapor deposition apparatus for manufacturing a display element such as an EL (or an organic light emitting diode (OLED)). However, this is exemplary and may be applied to other devices having a photovoltaic device, for example, an electrochemical cell, a photoconductive cell, a photoresistor, a photo switch, a phototransistor, and a phototube, depending on the organic source material SM. will be.
  • a photovoltaic device for example, an electrochemical cell, a photoconductive cell, a photoresistor, a photo switch, a phototransistor, and a phototube, depending on the organic source material SM.
  • the chamber body 10 provides a deposition processing space for inducing the deposition of the substrate S by the vapor phase precursor.
  • the chamber body 10 may be made of a metal material such as aluminum, stainless steel, or copper.
  • a coated metal material for example, an anodized or ceramic coated material may be used on the surface of the metal material, or may be made of another refractory metal.
  • the structure of the chamber body 10 may have a structure suitable for the deposition process of the substrate S, for example, a circular structure or a square structure, and any other structure.
  • the inside of the chamber body 10 may be maintained at a certain level of vacuum to facilitate the deposition process, the vacuum pump 15 for the composition of the vacuum may be connected.
  • the vacuum pump 15 may be a vacuum system such as a cryo, turbo pump or dry pump.
  • the chamber main body 10 may have an import / export port (or a gate; not shown) for carrying in and out of the substrate S.
  • the vacuum pump 15 for maintaining a reduced pressure atmosphere is optional, and when the deposition process is performed at normal pressure, the chamber body 10 has an open form, in which case, the substrate support 11 without a separate gate. In and out of the chamber body 10 can be made.
  • the chamber body 10 may be composed of a plurality of parts to make or release a sealed state, and the nozzle portion N provided in the chamber body 10 may be detachable from the chamber body 10. Can be.
  • the plurality of parts constituting the chamber body 10 and the nozzle portion N are mutually connected by fastening members (not shown) such as bolts / nuts, joints, and / or clamps, or threaded coupling or flange structures therebetween. May require a sealing member (not shown) to engage and maintain mechanical bond strength, or maintain airtightness.
  • the substrate SB on which the organic thin film SB is to be deposited may be a general glass substrate or a polymer substrate for implementing a flexible device.
  • the polymer substrate may be, for example, various cellulose resins; Polyester resins such as polyethyleneterephthalate (PET) and polyethylene naphthalate (PEN); Polyethylene resins; Polyvinyl chloride resins; Polycarbonate (PC); Polyether sulfones (PES); Polyether ether ketones (PEEK); And sulfonated polyphenylene (PPS) or any combination thereof.
  • PET polyethyleneterephthalate
  • PEN polyethylene naphthalate
  • PC Polycarbonate
  • PES Polyether sulfones
  • PEEK Polyether ether ketones
  • PPS sulfonated polyphenylene
  • it may be an inorganic material substrate such as silicon or sapphire substrate for manufacturing a semiconductor device.
  • the substrate support part 11 on which the substrate S is mounted may be disposed in the chamber body 10.
  • the substrate S on which the deposition process is performed is seated on the upper surface of the substrate support 11.
  • the substrate support 11 may be applied in various ways including any one or a combination of lift pins, electrostatic chucks, and vacuum chucks, and in some cases, the substrate S may be applied while the deposition process is performed on the substrate S. Can be rotated.
  • the substrate support 11 is a substrate placed on the substrate support 11 by the electrostatic electrode (not shown) is buried at the top, by applying a voltage to the electrostatic electrode to form an electrostatic force on the substrate support 11. (S) can be fixed by electrostatic adsorption.
  • the substrate support part 11 may include a lift pin (not shown) that supports the substrate S that has entered the chamber body 10 and seats the substrate support part 11.
  • the lift pins move up and down by a cylinder (not shown) that may be provided in the support shaft supporting the substrate support 11 to guide the substrate S to be seated on the substrate support 11.
  • the substrate support 11 may move vertically to adjust the distance between the nozzle portion N and the substrate S, and the lift pin is moved to control the distance between the nozzle portion N and the substrate S through movement. May be achieved.
  • the vapor deposition apparatus 100 of the present embodiment illustrates a top-down organic vapor phase deposition (OVPD) reactor in which the nozzle portion N and the substrate support portion 11 are disposed in the vertical direction, the nozzle portion and the substrate support portion 11 are illustrated. It can also be applied to a horizontal organic vapor phase deposition (OVPD) reactor disposed horizontally with respect to the ground.
  • OVPD organic vapor phase deposition
  • the source gas supply flow path 20 provides a source gas stream 20S of the first flow rate including the gaseous precursor on the substrate S.
  • the source gas supply flow path 20 extends through the nozzle portion N from an external source gas supply part and extends into the internal space of the chamber body 10.
  • the source gas supply flow path 20 may be formed to vertically penetrate the upper surface of the chamber body 10 and the central portion of the nozzle portion N, and the source gas inlet port 20P may be in contact with the internal space of the chamber body 10. Is formed.
  • the output port of the source gas supply flow path 20 does not need to extend to the upper portion of the nozzle portion N, but may also extend in the horizontal direction like the high speed gas supply flow paths 30.
  • the width of the source gas inlet port 20P may be in the range of 2 mm to 18 mm.
  • Source gas stream 20S may be a gaseous precursor alone or a mixed gas of carrier gas.
  • the vapor precursor may be an organic molecule, conjugated polymer, organometallic complex or inorganic source material suitable for vapor deposition, for example C 27 H 18 AlN 3 O 3 (ALQ3) and N, N'-Bis (naphthalene- Reference may be made to known materials such as 1-yl) -N, N'-bis (phenyl) benzidine (NPB).
  • the carrier gas is a gaseous fluid for delivering gaseous precursors from the source gas supply to the reactor where the deposition process takes place.
  • the carrier gas may be, for example, an inert gas such as helium, nitrogen and argon, which is heated and supplied to prevent condensation of the gaseous precursor used, or a reactive gas such as oxygen, ozone and carbon dioxide.
  • the high speed gas supply flow paths 30 discharge the high speed gas stream 30S having a second flow rate greater than the first flow rate of the source gas stream 20S.
  • the high velocity gas stream 30S may be the same kind of gas as the carrier gas contained in the source gas stream 20S. In this case, taking into account the process pressure in the chamber, the flow rate of the source gas stream 20S and the flow rate of the high speed gas stream 30S can be appropriately divided.
  • the high speed gas supply flow paths 30 extend from the external high speed gas supply part through the nozzle part N to the internal space of the chamber body 10.
  • the high speed gas supply flow paths 30 may be formed through the side surface of the chamber body 10 and the periphery of the nozzle portion N, and may contact the internal space of the chamber body 10 to open the high speed gas inlet port 20P. Configure. In the embodiment shown in FIG. 1, the high speed gas supply passages 30 are horizontally penetrated to the side of the nozzle portion N to be refracted downward in an area adjacent to the source gas supply passage 20. In another embodiment, the high speed gas supply passages 30 may be formed to pass through the upper or lower portions of the chamber body 10 and the nozzle portion N as necessary. However, the path of the high speed gas supply flow paths 30 may be minimized in consideration of the spatial efficiency of the facility, the pressure drop of the high speed gas, and the temperature change.
  • the high speed gas inlet port 30P is formed adjacent to the source gas inlet port 20P.
  • the high velocity gas inlet port 30P is from an end of the source gas inlet port 20P such that at least a portion of the discharged high velocity gas stream 30S flows along the outer wall 21 of the end of the source gas inlet port 20P.
  • the recesses are disposed in contact with the outer wall 21 of the source gas inlet port 20P. Accordingly, the source gas inlet port 20P protrudes toward the substrate S rather than the high speed gas inlet port 30P and descends from the high speed gas inlet port 30P recessed from the end of the source gas inlet port 20P.
  • the discharged high velocity gas stream 30S has a fluid flow flowing along the outer wall 21 of the source gas inlet port 20P.
  • the high speed gas inlet port 30P also ejects the high speed gas stream 30S such that the high speed gas stream 30S mixes with the source gas stream 20S while passing through the end of the source gas inlet port, and the source gas stream 20S. ) And the high velocity gas stream 30S may be radially injected toward the substrate S.
  • the high velocity gas inlet port 30P has a central axis 30AX of the high velocity gas passages 30 inclinedly intersecting with the central axis 20AX of the source gas passage 20 as shown in FIG. 1. . This angle of inclination may be 2 ° to 87 ° based on the interior angle.
  • the high velocity gas stream 30S discharged from the high velocity gas inlet port 30P flows along the outer wall 21 of the end of the source gas inlet port 20P to reduce the pressure around the end of the source gas inlet port 20P.
  • the width of this high speed gas inlet port 30P may be in the range of 0.05 mm to 5 mm. Preferably, it may be 0.5 mm to 1.3 mm.
  • the ratio M2 / M1 of the discharge flow rate M2 of the high speed gas inlet port 30P to the discharge flow rate M1 of the source gas inlet port 20P in the chamber body 10 is in the range of 2 to 500. Can be.
  • the flow rate flowing through the high speed gas inlet port 30P may be, for example, 50 sccm to 6000 sccm at a process pressure of 0.001 Torr to 1000 Torr.
  • the vapor deposition apparatus 100 of the present invention has a large area of the device because there is no deflection of the substrate and the mask by depositing the substrate using the vapor phase precursor from the top to the bottom, unlike the bottom-up deposition equipment using the conventional point source. It is possible to adapt to the deposition efficiency of the organic material can be increased.
  • the thickness and / or doping concentration of the thin film can be controlled by controlling idle variables such as source gas flow, deposition time, substrate temperature and process pressure.
  • the deposition rate is related to the proper source feed rate and the condensation rate on the substrate. High concentrations of source content allow for improved deposition rates but can lead to supersaturation near the cooling substrate. Therefore, it is important to properly control the flow of the source gas in order to obtain a deposition rate suitable for mass production while ensuring uniformity of film formation for a large area substrate.
  • the chamber In order to increase the flow rate of the source gas stream 20S to a source container (not shown) in communication with the chamber body 10 through the source gas supply flow path 20, when more carrier gas is flowed into the source container, the chamber The amount of source gas in the source gas stream 20S delivered to the body 10 does not increase in proportion to the increase in the amount of carrier gas that enters the source container. This is because the vaporization rate and the sublimation rate of the source material in the source container are not proportional to the increase in the carrier gas, and increase the thermal and hydrodynamic non-equilibrium factors in the source container, thereby increasing the turbulence and backflow in the source container ( backflow), resulting in dead spots.
  • Dead spots in the source container can form localized cooling zones which can lead to particle formation problems such as condensation of the source gaseous precursor.
  • the high velocity gas stream 30S passes through the end 21 of the source gas inlet port 20P that emits the source gas stream 20S including the gaseous precursor. 30S) causes a low pressure on the path of the source gas stream 20S at the end of the source gas inlet port, leading to the source container (41 in FIG. 5) via the carrier gas supply line (see 42 in FIG. 5). Force to be drawn into the source supply line (see 42_1 in FIG.
  • the nozzle portion N is disposed so that a plurality of high velocity gas streams 30S intersect the source gas stream 20S, so that the high velocity gas stream 30S and the source gas stream 20S face the deposition processing space.
  • the mixed gas can be radially dispersed, so that the source gas stream 20S can be evenly distributed over a large area to ensure uniformity of the deposition process on a large area substrate.
  • FIG. 2 is a perspective view of the nozzle unit N of the vapor deposition apparatus according to an embodiment of the present invention
  • FIG. 3 is a cross-sectional plan view of the nozzle unit N shown in FIG. 2.
  • 30_4P, 30_5P, and 30_6P may be arranged radially around the source gas inlet port 20P of the source gas supply flow path 20.
  • the first to sixth high speed gas supply flow paths 30_1, 30_2, 30_3, 30_4, 30_5, and 30_6 may be spaced apart from each other on a concentric circle at regular intervals, and may pass through the outer wall of the annular nozzle portion N orthogonally,
  • the first to sixth high speed gas inlet ports 30_1P, 30_2P, 30_3P, 30_4P, 30_5P, and 30_6P surround the source gas inlet port 20P by refracting downward in the region adjacent to the gas supply passage 20. It can be arranged as.
  • the number of the high speed gas supply flow paths 30 and the high speed gas inlet ports 30P may be appropriately added or subtracted as necessary, or the high speed gas supply flow paths may not be orthogonal to the outer wall of the nozzle portion N. It may be provided to be coupled to the inside to be coupled to the source gas inlet port 20P.
  • the central axes 30_1AX and 30_4AX of the high speed gas supply flow paths that face each other are provided as a source. It may be offset so as not to intersect the central axis 20AX of the gas inlet port 20P.
  • the source gas inlet port 20P may be disposed between the extension lines of the central axes 30_1AX and 30_4AX of the high speed gas supply passages facing each other.
  • the center axis 30_1AX of the first high speed gas supply passage 30_1 may be disposed.
  • a source gas inlet port 20P may be disposed between the central axis 30_4AX of the fourth high speed gas supply flow path 30_4 opposite thereto, but embodiments of the present invention are not limited thereto.
  • the supply flow paths may not be disposed opposite to the source gas inlet port 20P. For example, when the number of the high speed gas supply flow paths is odd, these high speed gas supply flow paths may be centered on the source gas inlet port 20P. It can be placed at 72 ° conformal, in which case they are not opposed.
  • the high speed gas stream 30S discharged from the high speed gas supply flow paths 30 is a source.
  • a rotational force may be applied to the source gas stream 20S discharged from the gas inlet port 20P so that the source gas stream 20S is evenly distributed toward the substrate.
  • the central axis 30AX 'of the high speed gas flow path is inclined aligned in the downstream direction of the source gas supply flow path 20', dispersion characteristics may be further improved.
  • the nozzle portion N may be composed of a plurality of parts to be assembled and disassembled.
  • the source gas supply flow path 20 and the high speed gas supply flow paths 30 are a part of the nozzle part N, for example, a pipe of each flow path is welded, screwed to the end of the nozzle part N, or It can be fastened using fastening members 10C such as bolts / nuts.
  • the nozzle part N may be formed to be integrated with a part of the source gas supply flow path 20 and the high speed gas supply flow paths 30 through mold manufacture.
  • the configuration and shape of the nozzle unit N and the fastening method between the source gas supply passage 20 and the high speed gas supply passages 30 may be variously modified, and the present invention is not limited thereto.
  • FIG. 4A is a cross-sectional view illustrating the nozzle part N ′ according to another embodiment of the present invention
  • FIG. 4B is a cross-sectional plan view of the nozzle part N ′ illustrated in FIG. 4A.
  • the source gas inlet port 20P 'of the present embodiment and each of the high speed gas inlet ports 30P' of the high speed gas supply flow paths 30 ' are spaced apart from each other, and the central axis 30AX of the high speed gas flow path. ') Is diagonally aligned in the downstream direction of the source gas supply flow path 20'.
  • a source gas inlet port 20P 'and a high speed gas inlet port 30P' are disposed at a lower end of the nozzle portion N ', and a mixture for mixing the source gas stream 20S' and the high speed gas stream 30S 'is provided.
  • the mixing space V is formed.
  • the mixing space V may have a groove shape, and the inner wall V1 defining the groove shape may be formed to be inclined such that the mixing space S has an opening gradually expanded in the direction of the substrate S.
  • FIG. In the mixing space V, the source gas stream 20S 'and the high velocity gas stream 30S' are mixed with each other, and a local low pressure is formed by the high velocity gas stream 30S ', whereby the source gas stream 20S' is formed. Aspiration may be achieved.
  • the high velocity gas inlet ports of the first to fifth high velocity gas supply passages 30_1 ′, 30_2 ′, 30_3 ′, 30_4 ′, and 30_5 ′ are radially centered on the source gas supply passage 20 ′. Is arranged.
  • the first to fifth high speed gas supply flow paths 30_1 ', 30_2', 30_3 ', 30_4', and 30_5 ' may be formed to form a spiral around the source gas supply flow path 20'.
  • the central axes 30_1AX ', 30_2AX', 30_3AX ', 30_4AX', and 30_5AX 'of the first to fifth high speed gas supply passages may be offset so as not to intersect the central axis 20AX' of the source gas inlet port 20P '. Can be.
  • the central axes 30_1AX ', 30_2AX', 30_3AX ', 30_4AX', and 30_5AX 'of the first to fifth high speed gas supply passages are center axes 20AX' of the source gas inlet port 20P '. It may also be aligned inclined downward while crossing.
  • the mixed gas of the source gas stream 20S 'and the high velocity gas stream 30S' is diffused while being guided by the inner wall V1 of the mixing space V and is evenly dispersed in a large area. Can be obtained, and as a result, uniform large-area processing can be facilitated.
  • FIG. 5 is a schematic diagram showing an additional configuration of the vapor deposition apparatus 200 according to an embodiment of the present invention.
  • the vapor deposition apparatus 200 may further include a first gas supplier 40, a second gas supplier 50, and a controller 60.
  • the first gas supply 40 provides a source gas mixed with an organic gaseous precursor, or optionally a carrier gas, through the source gas supply flow path 20.
  • the first gas supply part 40 may include a source container 41 and a carrier gas container 43.
  • the source container 41 communicates with the chamber body 10 through the source gas supply flow path 20, and heats the charged source material to form a vapor phase precursor.
  • the source material of the present invention may be a liquid or solid material having a vapor pressure of 10 ⁇ 6 Torr to 10 3 Torr within a range of 50 ° C. to 550 ° C.
  • the carrier gas container 43 communicates with the source container 41 through the carrier gas supply passage 42_2.
  • a carrier gas provided by the carrier gas container 43 an inert gas such as nitrogen, helium, argon, krypton, xenon, neon, or the like may be used.
  • the carrier gas passes through the source container 41 and supports the vaporized organic gaseous precursor in the source container 41 to be transferred to the chamber body 10.
  • the number of source containers 41 may be expanded.
  • the second gas supply unit 50 may provide a high speed gas through the high speed gas supply passages 30.
  • the high velocity gas may be a gas of the same kind or a different gas as the carrier gas, and when the carrier gas is used, its flow rate may be determined in consideration of the partial pressure with the carrier gas mixed in the source gas stream.
  • the effect of dispersing the source gas stream by the high velocity gas stream is represented by the dotted line.
  • the controller 60 may perform overall control of the vapor deposition apparatus 100.
  • the control unit 60 may be hardware such as an electronic control unit (ECU) or a micro control unit (MCU) or software running on these hardware, or may be a combination of these.
  • the controller 60 may further include units for signal amplification and / or noise filtering, or may be connected to separate units provided externally.
  • the controller 60 may include a flow controller (not shown) for adjusting the flow rates of the source gas stream 20S and the high speed gas stream 30S.
  • a mass flow controller or valve (not shown) for flow rate control may be installed in the source container 41, the carrier gas container 43, the second gas supply part 50, and each flow path connecting the same. have.
  • the chamber body 10 or nozzle portion N may include a heating portion (not shown) to maintain the organic gaseous precursors passing through the source gas supply passage 20 above a predetermined temperature to prevent condensation. It is preferable.
  • the substrate support part 11 may include a temperature control part 13 for controlling the temperature of the substrate S.
  • the temperature control part 13 includes cooling lines and substrate heating parts to heat or cool the substrate support part 11, thereby controlling the temperature of the substrate S, thereby controlling the temperature of the substrate S.
  • the organic thin film is deposited uniformly. When depositing the organic thin film by the condensation mechanism, the substrate support 11 may be cooled.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical Vapour Deposition (AREA)
PCT/KR2013/004461 2012-05-21 2013-05-21 Appareil de dépôt de vapeur organique Ceased WO2013176475A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020120053572A KR101338931B1 (ko) 2012-05-21 2012-05-21 유기 기상 증착 장치
KR10-2012-0053572 2012-05-21

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Cited By (1)

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CN112239849A (zh) * 2019-07-01 2021-01-19 无锡科硅电子技术有限公司 一种薄膜生长系统及方法

Families Citing this family (3)

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Publication number Priority date Publication date Assignee Title
US9951421B2 (en) * 2014-12-10 2018-04-24 Lam Research Corporation Inlet for effective mixing and purging
KR101701865B1 (ko) * 2015-01-30 2017-02-02 한국표준과학연구원 유도 가열 선형 증발 증착 장치
FI128855B (en) * 2019-09-24 2021-01-29 Picosun Oy FLUID DISTRIBUTOR FOR THIN FILM GROWING EQUIPMENT, RELATED EQUIPMENT AND METHODS

Citations (4)

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Publication number Priority date Publication date Assignee Title
US20040048000A1 (en) * 2001-09-04 2004-03-11 Max Shtein Device and method for organic vapor jet deposition
KR20040028048A (ko) * 2002-09-28 2004-04-03 한국전자통신연구원 유기물 박막 및 유기물 소자를 위한 대면적 유기물 기상증착 장치 및 제조 방법
WO2006082117A1 (fr) * 2005-01-31 2006-08-10 Aixtron Ag Distributeur de gaz muni de prechambres situees dans des plans
WO2011043414A1 (fr) * 2009-10-09 2011-04-14 国立大学法人東北大学 Couche mince, son procédé de fabrication et élément électroluminescent à semi-conducteur comprenant la couche mince

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040048000A1 (en) * 2001-09-04 2004-03-11 Max Shtein Device and method for organic vapor jet deposition
KR20040028048A (ko) * 2002-09-28 2004-04-03 한국전자통신연구원 유기물 박막 및 유기물 소자를 위한 대면적 유기물 기상증착 장치 및 제조 방법
WO2006082117A1 (fr) * 2005-01-31 2006-08-10 Aixtron Ag Distributeur de gaz muni de prechambres situees dans des plans
WO2011043414A1 (fr) * 2009-10-09 2011-04-14 国立大学法人東北大学 Couche mince, son procédé de fabrication et élément électroluminescent à semi-conducteur comprenant la couche mince

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112239849A (zh) * 2019-07-01 2021-01-19 无锡科硅电子技术有限公司 一种薄膜生长系统及方法

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KR20130129572A (ko) 2013-11-29

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