WO2013190871A1 - Capteur optique à source de lumière intégrée - Google Patents

Capteur optique à source de lumière intégrée Download PDF

Info

Publication number
WO2013190871A1
WO2013190871A1 PCT/JP2013/057074 JP2013057074W WO2013190871A1 WO 2013190871 A1 WO2013190871 A1 WO 2013190871A1 JP 2013057074 W JP2013057074 W JP 2013057074W WO 2013190871 A1 WO2013190871 A1 WO 2013190871A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
light source
source integrated
substrate
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2013/057074
Other languages
English (en)
Japanese (ja)
Inventor
伸一 眞▲崎▼
井上　修二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aoi Electronics Co Ltd
Original Assignee
Aoi Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aoi Electronics Co Ltd filed Critical Aoi Electronics Co Ltd
Priority to TW102121883A priority Critical patent/TWI581449B/zh
Priority to PCT/JP2013/066919 priority patent/WO2013191235A1/fr
Priority to JP2014521500A priority patent/JP6133287B2/ja
Priority to CN201380032199.XA priority patent/CN104396026B/zh
Publication of WO2013190871A1 publication Critical patent/WO2013190871A1/fr
Anticipated expiration legal-status Critical
Priority to JP2017001219A priority patent/JP6312872B2/ja
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
    • G01S7/4813—Housing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/60—Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • the present invention relates to a light source integrated optical sensor.
  • a light source integrated optical sensor in which a light emitting chip and a light receiving chip provided on a substrate are covered with a transparent resin, a groove is formed in the transparent resin between the light emitting chip and the light receiving chip, and the groove is filled with a light shielding resin. (See Patent Document 1).
  • the flat shape of the surface of the transparent resin on the light-receiving chip is damaged due to the heat generated in the light-emitting chip, and there is a risk of deformation or alteration or discoloration.
  • the deformation or discoloration of the surface of the transparent resin on the light receiving chip leads to deterioration of light receiving characteristics such as a decrease in light receiving sensitivity.
  • the light source integrated optical sensor includes a light receiving unit provided in a predetermined region on the substrate, a light emitting unit provided in a region different from the light receiving unit on the substrate, and the light receiving unit.
  • a first light transmissive member provided to cover the light receiving portion; a second light transmissive member provided on the light emitting portion to cover the light emitting portion; a first light transmissive member and a second light transmissive member; And a heat-dissipating member in contact with each of the first light-transmitting member, the second light-transmitting member, and the light-shielding member.
  • the heat radiating member has an opening at a position corresponding to the light emitting part and the light receiving part, and the first light transmissive member and the second light transmissive member are provided. It is preferable to use a planar member that is in contact with the surface formed by the optical member and the light shielding member from above.
  • the heat conducting member that is in contact with the substrate and the heat radiating member in place of the light shielding member or along the light shielding member is further provided. You may prepare.
  • the heat conducting member is in contact with a through hole provided in the substrate.
  • the heat radiating member is constituted by a second light-shielding member that surrounds the substrate and has thermal conductivity.
  • the heat dissipating member in the light source integrated optical sensor according to the fifth aspect, further has an opening at a position corresponding to the light emitting part and the light receiving part, and the first light transmitting member and the second light transmitting member are provided.
  • the light source integrated optical sensor according to the sixth aspect may further include a heat conducting member in contact with the substrate and the planar member.
  • the heat conducting member is preferably in contact with a through hole provided in the substrate.
  • FIG. 1 (a) is a top view
  • FIG.1 (b) is sectional drawing
  • 2 (a), FIG. 2 (b), FIG. 2 (c), and FIG. 2 (d) are diagrams for explaining a method of manufacturing a light source integrated photosensor.
  • FIG. 3 is a cross-sectional view of the light source integrated photosensor according to the first modification.
  • FIG. 4 is a cross-sectional view of a light source integrated photosensor according to a second modification.
  • FIG. 5 is a cross-sectional view of a light source integrated photosensor according to Modification 3.
  • FIG. 6 is a cross-sectional view of a light source integrated photosensor according to a fourth modification.
  • FIG. 7A and 7B are diagrams of a light source integrated photosensor according to a second embodiment, in which FIG. 7A is a top view and FIG. 7B is a cross-sectional view.
  • FIG. 8A is a top view after dicing, and FIG. 8B is a cross-sectional view.
  • FIG. 9A is a diagram in which the groove is filled with an opaque resin
  • FIG. 9B is a diagram in which the opaque resin is separated by a space.
  • FIG. 10 is a diagram for explaining the cutting and singulation of the sensor.
  • FIG. 1 is a diagram illustrating a light source integrated photosensor 1 according to a first embodiment of the invention.
  • FIG. 1A is a top view of the light source integrated photosensor 1
  • FIG. 2B is a cross-sectional view of the light source integrated photosensor 1 taken along line EE ′ in FIG.
  • the light source integrated optical sensor 1 is configured by integrally forming a light emitting element and a light receiving element on a substrate 10.
  • light emitted from the light emitting element is emitted from an opening 45 ⁇ / b> B, and reflected light reflected by an external object is reflected. It is used for the purpose of determining the presence or absence of an external object based on whether or not the light is incident on the opening 45A and received by the light receiving element.
  • a light receiving chip (PDIC) 20 having a light receiving element (photodiode) and a peripheral circuit is provided on the upper surface of a substrate 10 made of an organic material, ceramic, lead frame or the like.
  • the light receiving chip 20 is connected to the patterns 11 and 12 on the substrate 10 by bonding wires 21 and 22.
  • a light emitting chip 30 composed of light emitting elements is further provided on the upper surface of the substrate 10.
  • one of an anode electrode and a cathode electrode of a light emitting diode (LED) is connected to the pattern 14 formed on the lower surface of the substrate 10 through a through hole 15 made of metal.
  • the other electrode of the light emitting chip 30 is connected to a pattern (not shown) on the substrate 10 by a bonding wire 31.
  • a space 60 is provided between the light receiving chip 20 and the light emitting chip 30, and an opaque resin 51A is provided on the light receiving chip 20 side, and an opaque resin 51B is provided on the light emitting chip 30 side.
  • the opaque resin 51B blocks light emitted from the light emitting chip 30 to the light receiving chip 20 side.
  • the height of the opaque resin 51A is substantially the same as the height of the opaque resin 51B.
  • the opaque resin 51 ⁇ / b> A is provided so that the light receiving chip 20 does not receive external light when external light is incident on the space 60.
  • a transparent resin 41A is provided at substantially the same height as the opaque resin 51A so as to cover the light receiving chip 20 and the bonding wires 21 and 22. Further, on the light emitting chip 30 side of the opaque resin 51B, a transparent resin 41B is provided at substantially the same height as the opaque resin 51B so as to cover the light emitting chip 30 and the bonding wires 31.
  • a heat radiating plate 45 is provided in contact with the top surfaces of the transparent resin 41A, the opaque resin 51A, the space 60, the opaque resin 51B, and the transparent resin 41B.
  • the heat radiating plate is made of a thin metal plate (for example, an aluminum plate or a copper plate), and has an opening 45B located on the light emitting portion of the light emitting chip 30 and an opening 45A located on the light receiving portion of the light receiving chip 20.
  • the patterns 11 and 12 on the substrate 10 are configured to be connectable to other through holes similar to the through hole 15 or the pattern 13 formed on the lower surface of the substrate 10 through a through via (not shown). ing.
  • FIG. 2A the light receiving chip 20 is die-mounted at a predetermined position on the upper surface of the circuit board 10 on which the pattern is formed.
  • the light emitting chip 30 is die mounted on the pattern connected to the through hole 15.
  • the plurality of electrodes of the light receiving chip 20 are bonded to the patterns 11 and 12 of the substrate 10 and other patterns by bonding wires 21 and 22 and a bonding wire (not shown), respectively.
  • the upper electrode of the light emitting chip 30 and a predetermined pattern of the substrate 10 are bonded by a bonding wire 31.
  • the light receiving chip 20 and the bonding wires 21 and 22, and the light emitting chip 30 and the bonding wire 31 are sealed with a transparent resin 41 so as to cover them.
  • a dicing process is performed between the light receiving chip 20 and the light emitting chip 30 to cut a part of the transparent resin 41 until it reaches the surface of the substrate 10. Thereby, the transparent resin 41 is separated into the transparent resins 41A and 41B.
  • an opaque resin 51 is filled between the transparent resins 41A and 41B.
  • the surfaces of the transparent resin 41A, the opaque resin 51, and the transparent resin 41B are set to the same height.
  • a dicing process is performed in which a part of the opaque resin 51 is cut until it reaches the surface of the substrate 10.
  • a blade having a narrower width than that at the time of dicing in FIG. 2C a space 60 for separating the opaque resin 51 into the opaque resins 51A and 51B is obtained as illustrated in FIG.
  • the heat radiating plate 45 having the opening 45B and the opening 45A is bonded to the upper surfaces of the transparent resin 41A, the opaque resin 51A, the space 60, the opaque resin 51B, and the transparent resin 41B, the light source integrated photosensor 1 of FIG. Complete.
  • the light source integrated optical sensor 1 includes a light receiving chip 20 provided in a predetermined region on the substrate 10, a light emitting chip 30 provided in a region different from the light receiving chip 20 on the substrate 10, and the light receiving chip 20.
  • a transparent resin 41A provided so as to cover the light receiving chip 20, a transparent resin 41B provided on the light emitting chip 30 so as to cover the light emitting chip 30, and a transparent resin 41A provided between the transparent resin 41A and the transparent resin 41B.
  • the opaque resins 51A and 51B, the transparent resins 41A and 41B, and the heat radiating plates 45 that are in contact with the opaque resins 51A and 51B, respectively, are provided.
  • the heat conductivity of the heat radiating plate 45 is higher than the heat conductivity of the resin, and is about several hundred times to 1000 times. For this reason, when the heat from the light emitting chip 30 is transmitted to the heat radiating plate 45, the heat is radiated widely from the surface of the heat radiating plate 45 to the outside of the sensor. As a result, it is possible to avoid a temperature increase that causes the surface of the transparent resin 41A covering the light receiving chip 20 to be deformed or discolored.
  • the heat radiating plate 45 has openings 45B and 45A at positions corresponding to the light emitting chip 30 and the light receiving chip 20, and includes transparent resins 41A and 41B and opaque resin 51A. , 51B is in contact with the surface formed from above. Thereby, the heat in the sensor can be efficiently transmitted to the heat radiating plate 45 and radiated from the surface of the heat radiating plate 45 to the outside of the sensor. Moreover, since the openings 45B and 45A are provided, the influence of unnecessary light can be suppressed.
  • FIG. 3 is a cross-sectional view of a light source integrated optical sensor 1B according to the first modification.
  • the light source integrated photosensor 1B according to FIG. 3 differs from the light source integrated photosensor 1 described above in that an opaque resin 51 is provided only on the light receiving chip 20 side of the space 60.
  • the light source integrated optical sensor 1B of Modification 1 performs a dicing process in which a part of the opaque resin 51 is cut until reaching the surface of the substrate 10 on the transparent resin 41B side of the opaque resin 51 illustrated in FIG. Apply.
  • the opaque resin 51 remains only on the light receiving chip 20 side of the space 60, and no opaque resin remains on the light emitting chip 30 side of the space 60.
  • the light receiving chip 20 can block the light from being received.
  • the heat radiation performance is improved by providing the heat radiating plate 45, it is possible to avoid a temperature rise that causes the surface of the transparent resin 41A covering the light receiving chip 20 to be deformed and discolored.
  • the space 60 heat conduction from the light emitting chip 30 side to the light receiving chip 20 side through the opaque resin 51 can be reduced.
  • FIG. 4 is a cross-sectional view of a light source integrated photosensor 1C according to the second modification. 4 differs from the light source integrated photosensor 1 described above in that a light shielding film 52 is formed on the side surface of the transparent resin 41A on the space 60 side.
  • the light source integrated optical sensor 1C according to Modification 2 forms a light-shielding film 52 by sputtering a predetermined metal material on the right side (space side) of the transparent resin 41A illustrated in FIG. Thereby, it is possible to shield the external light incident on the space 60 from being received by the light receiving chip 20.
  • FIG. 5 is a cross-sectional view of a light source integrated photosensor 1D according to Modification 3.
  • the light source integrated photosensor 1D according to FIG. 5 is provided with a material having a high thermal conductivity, for example, a metal plate 70 in the space 60 as compared with the light source integrated photosensor 1 of FIG. The difference is that the through hole 16 is formed in accordance with the position immediately below.
  • the light source integrated photosensor 1D of Modification 3 is obtained by performing the same processing as the light source integrated photosensor 1 on the substrate 10B in which the through hole 16 is additionally formed on the substrate 10 and then directly above the through hole 16. Is provided with a metal plate 70 which is a heat conductive material. The heat transmitted from the light emitting chip 30 side to the metal plate 70 can also be radiated from the lower surface side pattern 17 of the substrate 10B through the through hole 16.
  • a gap may be filled between the metal plate 70 and the opaque resin 51B by applying a filler so that the heat on the light emitting chip 30 side can be easily absorbed into the metal plate 70. Since the space 60 is provided immediately above the through hole 16, the metal plate 70 provided in the space 60 is positioned on the through hole 16, so that the heat transferred to the metal plate 70 is transmitted through the through hole 16. Thus, it is possible to efficiently escape to the lower side of the substrate 10.
  • the heat transmitted to the metal plate 70 is also conducted to the heat radiating plate 45.
  • the heat radiation performance is improved by providing the heat radiating plate 45, it is possible to avoid a temperature rise that causes the surface of the transparent resin 41A covering the light receiving chip 20 to be deformed and discolored.
  • the heat conductivity of the metal plate 70 is higher than the heat conductivity of the resin, and is approximately several hundred times to 1000 times. Therefore, the heat transmitted to the metal plate 70 is immediately transmitted to the lower side of the substrate 10 through the heat radiating plate 45 and the through hole 16.
  • FIG. 6 is a cross-sectional view of a light source integrated photosensor 1E according to Modification 4.
  • the light source integrated photosensor 1E according to FIG. 6 is provided with a material having a high thermal conductivity, for example, a metal plate 70 in the space 60 as compared with the light source integrated photosensor 1B of FIG. The difference is that the through hole 16 is formed in accordance with the position immediately below.
  • the substrate 10B additionally provided with the through hole 16 is subjected to the same processing as that of the light source integrated photosensor 1B, and the heat conductivity is directly above the through hole 16.
  • a metal plate 70 as a material is provided. The heat transmitted from the light emitting chip 30 side to the metal plate 70 can also be radiated from the lower surface side pattern 17 of the substrate 10B through the through hole 16.
  • a gap may be filled between the metal plate 70 and the transparent resin 41B by applying a filler so that the heat on the light emitting chip 30 side can be easily absorbed into the metal plate 70. Since the space 60 is provided immediately above the through hole 16, the metal plate 70 provided in the space 60 is positioned on the through hole 16, so that the heat transferred to the metal plate 70 is transmitted through the through hole 16. Thus, it is possible to efficiently escape to the lower side of the substrate 10.
  • the heat transmitted to the metal plate 70 is also conducted to the heat radiating plate 45.
  • the heat radiation performance is improved by providing the heat radiating plate 45, it is possible to avoid a temperature rise that causes the surface of the transparent resin 41A covering the light receiving chip 20 to be deformed and discolored.
  • the heat conductivity of the metal plate 70 is higher than the heat conductivity of the resin, so that the heat transmitted to the metal plate 70 immediately goes to the lower side of the substrate 10 via the heat radiating plate 45 and the through hole 16. It is transmitted.
  • Modification 5 When the metal plate 70 is provided as in the third modification or the fourth modification, the opaque resins 51A and 51B or the opaque resin 51 may be omitted. In this case, the direct light emitted from the light emitting chip 30 to the light receiving chip 20 side is shielded by the metal plate 70.
  • FIG. 7 is a diagram illustrating the light source integrated photosensor 2 according to the second embodiment of the invention.
  • FIG. 7A is a top view of the light source integrated photosensor 2
  • FIG. 7B is a cross-sectional view of the light source integrated photosensor 2 taken along line EE ′ in FIG. 7A.
  • the difference is that the opaque resin 51C and the opaque resin 51D are provided around the sensor. A method for manufacturing the optical sensor 2 will be described.
  • FIG. 2B In the manufacturing procedure of the light source integrated photosensor 2, until the light receiving chip 20 and the bonding wires 21 and 22 and the light emitting chip 30 and the bonding wire 31 are respectively covered with the transparent resin 41 (FIG. 2B). Since the procedure is the same as the procedure described in the first embodiment, the description thereof is omitted.
  • a part of the transparent resin 41 reaches the surface of the substrate 10 from the sealing state with the transparent resin 41 between the light receiving chip 20 and the light emitting chip 30 and the outer peripheral portion on the substrate 10. Dicing process is performed to cut up to. Thereby, as illustrated in FIG. 8A and FIG. 8B, the transparent resin 41 is separated into the transparent resins 41A and 41B.
  • FIG. 8A is a top view at this point
  • FIG. 8B is a cross-sectional view at this point.
  • opaque resin 51 is filled in the dicing groove.
  • a heat conductive material having high heat conductivity is used for the opaque resin 51. Note that the surfaces of the transparent resin 41A, the opaque resin 51, and the transparent resin 41B have the same height.
  • a dicing process is performed in which a part of the opaque resin 51 is cut until it reaches the surface of the substrate 10.
  • a blade having a narrower width than the distance between the transparent resin 41A and the transparent resin 41B By using a blade having a narrower width than the distance between the transparent resin 41A and the transparent resin 41B, a space 60 for separating the opaque resin 51 into the opaque resins 51A and 51B is obtained as illustrated in FIG. 9B.
  • the heat radiating plate 45 having the openings 45B and 45A is bonded to the upper surfaces of the opaque resin 51C, the transparent resin 41A, the opaque resin 51A, the space 60, the opaque resin 51B, the transparent resin 41B, and the opaque resin 51D, FIG.
  • the light source integrated photosensor 2 is completed.
  • the light source integrated photosensor 2 When the light source integrated photosensor 2 is actually manufactured, a plurality of sensors illustrated in FIG. 9B are formed on the substrate 10C, and the opaque resin 51 between the sensors is cut by dicing. Divide into pieces. In FIG. 10, the black thick line L shows the cutting location for individualization.
  • the light source integrated optical sensor 2 includes a light receiving chip 20 provided in a predetermined region on the substrate 10C, a light emitting chip 30 provided in a region different from the light receiving chip 20 on the substrate 10C, and the light receiving chip 20.
  • a transparent resin 41A provided so as to cover the light receiving chip 20, a transparent resin 41B provided on the light emitting chip 30 so as to cover the light emitting chip 30, and a transparent resin 41A provided between the transparent resin 41A and the transparent resin 41B.
  • the opaque resins 51A and 51B, the transparent resins 41A and 41B, and the opaque resins 51 are provided as heat dissipation members in contact with the opaque resins 51A and 51B, respectively. Since heat generated in the light emitting chip 30 can be efficiently radiated, deterioration of characteristics due to heat from the light emitting portion can be suppressed. Specifically, when heat from the light emitting chip 30 is transmitted to the opaque resin 51, the heat is released from the opaque resin 51 to the outside of the sensor. As a result, it is possible to avoid a temperature increase that causes the surface of the transparent resin 41A covering the light receiving chip 20 to be deformed or discolored.
  • the opaque resin 51 (51C, 51D) that surrounds the substrate 10C and has thermal conductivity, and the opaque resin between the transparent resin 41A and the transparent resin 41B.
  • a heat radiating member was constituted by 51A and 51B.
  • the thermal conductivity of the opaque resin 51 having thermal conductivity is several tens to about 100 times larger than the thermal conductivity of a normal resin. For this reason, when the heat from the light emitting chip 30 is transmitted to the opaque resin 51, the heat is widely dissipated from the opaque resin 51 to the outside of the surrounding sensors.
  • the heat dissipating member further has openings 45B and 45A at positions corresponding to the light emitting chip 30 and the light receiving chip 20, and the transparent resins 41A and 41B and the opaque resin 51A. , 51B, 51C, 51D are included so as to include a heat radiating plate 45 in contact with the surface from above. For this reason, the heat from the light emitting chip 30 is also transmitted to the heat radiating plate 45, and is widely radiated from the surface of the heat radiating plate 45 to the outside of the sensor.
  • the heat radiating plate 45 is omitted from the light source integrated optical sensor 2, and the heat radiating member is formed by the opaque resin 51 (51C, 51D) surrounding the substrate 10C and the opaque resin 51A, 51B between the transparent resin 41A and the transparent resin 41B. You may comprise (state of FIG.9 (b)).
  • the opaque resin 51 is provided around the substrate 10C, the surface area where the opaque resin 51 is in contact with air is increased.
  • the heat dissipation amount from the opaque resin 51 is larger than the heat generation amount in the light emitting chip 30, the surface of the transparent resin 41A covering the light receiving chip 20 is deformed and discolored without providing the heat dissipation plate 45. Such temperature rise can be avoided.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Device Packages (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)

Abstract

L'invention concerne un capteur optique à source de lumière intégrée comprenant : une unité de réception de lumière disposée dans une zone prescrite sur un substrat; une unité d'émission de lumière disposée dans une zone différente de l'unité de réception de lumière sur le substrat; un premier élément de transmission de lumière disposé sur l'unité de réception de lumière de façon à recouvrir l'unité de réception de lumière; un second élément de transmission de lumière disposé sur l'unité d'émission de lumière de façon à recouvrir l'unité d'émission de lumière; un élément de blocage de lumière disposé entre le premier élément de transmission de lumière et le second élément de transmission de lumière; et un élément de dissipation thermique en contact avec le premier membre de transmission de lumière, le second membre de transmission de lumière, et l'élément de blocage de lumière.
PCT/JP2013/057074 2012-06-20 2013-03-13 Capteur optique à source de lumière intégrée Ceased WO2013190871A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
TW102121883A TWI581449B (zh) 2012-06-20 2013-06-20 Light source integrated light sensor
PCT/JP2013/066919 WO2013191235A1 (fr) 2012-06-20 2013-06-20 Capteur optique intégré à une source lumineuse
JP2014521500A JP6133287B2 (ja) 2012-06-20 2013-06-20 光源一体型光センサ
CN201380032199.XA CN104396026B (zh) 2012-06-20 2013-06-20 光源一体型光传感器
JP2017001219A JP6312872B2 (ja) 2012-06-20 2017-01-06 光源一体型光センサ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012138589 2012-06-20
JP2012-138589 2012-06-20

Publications (1)

Publication Number Publication Date
WO2013190871A1 true WO2013190871A1 (fr) 2013-12-27

Family

ID=49768480

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/JP2013/057074 Ceased WO2013190871A1 (fr) 2012-06-20 2013-03-13 Capteur optique à source de lumière intégrée
PCT/JP2013/066919 Ceased WO2013191235A1 (fr) 2012-06-20 2013-06-20 Capteur optique intégré à une source lumineuse

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/066919 Ceased WO2013191235A1 (fr) 2012-06-20 2013-06-20 Capteur optique intégré à une source lumineuse

Country Status (4)

Country Link
JP (2) JP6133287B2 (fr)
CN (1) CN104396026B (fr)
TW (1) TWI581449B (fr)
WO (2) WO2013190871A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114420652A (zh) * 2022-01-20 2022-04-29 日月光半导体制造股份有限公司 半导体封装装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6679306B2 (ja) * 2015-12-28 2020-04-15 シャープ株式会社 発光素子の製造方法
DE102016106135A1 (de) * 2016-04-04 2017-10-05 Vishay Semiconductor Gmbh Elektronische Einheit
JP6620176B2 (ja) * 2018-01-29 2019-12-11 アオイ電子株式会社 半導体装置
JP7420725B2 (ja) 2018-08-31 2024-01-23 ソニーセミコンダクタソリューションズ株式会社 発光装置および表示装置
CN111341768B (zh) * 2020-03-06 2022-01-11 弘凯光电(深圳)有限公司 一种传感模组
US11784174B2 (en) * 2021-02-04 2023-10-10 Advanced Semiconductor Engineering, Inc. Optical package structure and method for manufacturing the same
CN115528133A (zh) * 2022-07-12 2022-12-27 珠海越亚半导体股份有限公司 一种感光发光传感器结构及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001185751A (ja) * 1999-12-24 2001-07-06 Citizen Electronics Co Ltd 表面実装型赤外線通信モジュールの構造および駆動回路
JP2005340727A (ja) * 2004-05-31 2005-12-08 New Japan Radio Co Ltd 受発光素子の製造方法
JP2007042881A (ja) * 2005-08-03 2007-02-15 Sharp Corp 赤外線通信デバイス
JP2010114196A (ja) * 2008-11-05 2010-05-20 Rohm Co Ltd 反射型フォトインタラプタ

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118755U (ja) * 1982-02-04 1983-08-13 オムロン株式会社 半導体撮像素子の実装構造
JPS61204989A (ja) * 1985-03-08 1986-09-11 Toshiba Corp 半導体光電変換装置
JPS6285479A (ja) * 1985-10-11 1987-04-18 Toshiba Corp 半導体受発光複合装置
US5912872A (en) * 1996-09-27 1999-06-15 Digital Optics Corporation Integrated optical apparatus providing separated beams on a detector and associated methods
JPH11289105A (ja) * 1998-04-03 1999-10-19 Citizen Electronics Co Ltd フォトリフレクタとその製造方法
JP2001308372A (ja) * 2000-04-18 2001-11-02 Citizen Electronics Co Ltd 反射型光センサ
JP2004071734A (ja) * 2002-08-05 2004-03-04 New Japan Radio Co Ltd 受発光素子の製造方法
TW560027B (en) * 2002-08-29 2003-11-01 Tung-An Chen LED package with inserted metal cup
JP2005044861A (ja) * 2003-07-23 2005-02-17 Seiko Epson Corp 半導体装置、半導体装置の使用方法、半導体装置の製造方法および電子機器
US7456499B2 (en) * 2004-06-04 2008-11-25 Cree, Inc. Power light emitting die package with reflecting lens and the method of making the same
JP4349978B2 (ja) * 2004-06-17 2009-10-21 シチズン電子株式会社 光半導体パッケージ及びその製造方法
TWM274648U (en) * 2004-07-02 2005-09-01 Li-Jie Huang Light emission device that have the function of heat dissipation
JP4413707B2 (ja) * 2004-08-16 2010-02-10 ポリプラスチックス株式会社 多層構造を持つ放熱性樹脂成形品
CN101138094B (zh) * 2005-03-09 2010-10-13 旭化成电子材料元件株式会社 光学器件及光学器件的制造方法
JP2008010832A (ja) * 2006-06-01 2008-01-17 Nippon Telegr & Teleph Corp <Ntt> 光学センサ、センサチップ及び生体情報測定装置
US8471283B2 (en) * 2008-02-25 2013-06-25 Kabushiki Kaisha Toshiba White LED lamp, backlight, light emitting device, display device and illumination device
JP5105483B2 (ja) * 2008-09-19 2012-12-26 古河スカイ株式会社 樹脂被覆アルミニウム板
TWM356225U (en) * 2008-10-24 2009-05-01 Solidlite Corp LED lead-frame structure having better heat dissipation effect
US8779361B2 (en) * 2009-06-30 2014-07-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Optical proximity sensor package with molded infrared light rejection barrier and infrared pass components
JP4699551B2 (ja) * 2009-11-02 2011-06-15 シャープ株式会社 光ポインティング装置およびそれを備える電子機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001185751A (ja) * 1999-12-24 2001-07-06 Citizen Electronics Co Ltd 表面実装型赤外線通信モジュールの構造および駆動回路
JP2005340727A (ja) * 2004-05-31 2005-12-08 New Japan Radio Co Ltd 受発光素子の製造方法
JP2007042881A (ja) * 2005-08-03 2007-02-15 Sharp Corp 赤外線通信デバイス
JP2010114196A (ja) * 2008-11-05 2010-05-20 Rohm Co Ltd 反射型フォトインタラプタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114420652A (zh) * 2022-01-20 2022-04-29 日月光半导体制造股份有限公司 半导体封装装置

Also Published As

Publication number Publication date
JP6312872B2 (ja) 2018-04-18
JP6133287B2 (ja) 2017-05-24
TWI581449B (zh) 2017-05-01
JPWO2013191235A1 (ja) 2016-05-26
CN104396026B (zh) 2017-06-30
WO2013191235A1 (fr) 2013-12-27
CN104396026A (zh) 2015-03-04
TW201401541A (zh) 2014-01-01
JP2017098571A (ja) 2017-06-01

Similar Documents

Publication Publication Date Title
JP6312872B2 (ja) 光源一体型光センサ
KR101659677B1 (ko) 광원 일체형 광센서 및 광원 일체형 광센서의 제조방법
TWI556422B (zh) 影像模組封裝及其製作方法
JP5847644B2 (ja) 光源一体型光センサの製造方法
JP5243806B2 (ja) 紫外光発光装置
JP5896758B2 (ja) Ｌｅｄ発光装置
JP2015165551A (ja) 光センサ装置
US20160190397A1 (en) Led package structure and the manufacturing method of the same
JP6738224B2 (ja) Ｌｅｄパッケージ
TWI899085B (zh) 光學裝置
JP4877239B2 (ja) 発光装置の製造方法
JP5855590B2 (ja) 光源一体型光センサ
JP5390938B2 (ja) 発光装置
CN103855272A (zh) 发光二极管封装结构以及相关制造方法
WO2013168442A1 (fr) Capteur optique intégré à une source lumineuse et procédé de fabrication d&#39;un capteur optique intégré à une source lumineuse
US7741651B2 (en) Light emitting diode
JP2016162860A (ja) Ｌｅｄ発光装置
JP5351624B2 (ja) Ｌｅｄモジュール
JP7257288B2 (ja) 光センサ用パッケージ、多数個取り配線基板、光センサ装置および電子モジュール
CN105122481B (zh) 波长转换元件、光电组件和印刷模版
JP2009177101A (ja) 発光装置
JP2009177099A (ja) 発光装置
JP6717621B2 (ja) 光学装置および光学装置の製造方法
JP5351620B2 (ja) 発光装置
JP2022175106A (ja) 発光装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13807002

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13807002

Country of ref document: EP

Kind code of ref document: A1