WO2014001149A1 - Procédé de dépôt d'une couche de particules déposée par électrophorèse, composant à semi-conducteur émettant un rayonnement et élément optique - Google Patents

Procédé de dépôt d'une couche de particules déposée par électrophorèse, composant à semi-conducteur émettant un rayonnement et élément optique Download PDF

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Publication number
WO2014001149A1
WO2014001149A1 PCT/EP2013/062618 EP2013062618W WO2014001149A1 WO 2014001149 A1 WO2014001149 A1 WO 2014001149A1 EP 2013062618 W EP2013062618 W EP 2013062618W WO 2014001149 A1 WO2014001149 A1 WO 2014001149A1
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WO
WIPO (PCT)
Prior art keywords
electrically conductive
conductive layer
layer
substrate
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2013/062618
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German (de)
English (en)
Inventor
Ion Stoll
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of WO2014001149A1 publication Critical patent/WO2014001149A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D13/00—Electrophoretic coating characterised by the process
    • C25D13/02—Electrophoretic coating characterised by the process with inorganic material
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D13/00—Electrophoretic coating characterised by the process
    • C25D13/12—Electrophoretic coating characterised by the process characterised by the article coated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires

Definitions

  • a process for the deposition of an electrophoretically deposited particulate layer is given. Furthermore, a radiation-emitting semiconductor component and an optical element are specified.
  • the substrate is provided with an electrically conductive layer around the surface to which the electrophoretically deposited particulate layer
  • the electrically conductive layer remains unchanged in the later component. This can lead to short circuits during later operation of the component. Furthermore, due to the electrically conductive layer, it may become a
  • the object of the present invention is to provide an improved process for the electrophoretic deposition of a
  • Patent Prize 15 solved. Advantageous embodiments and further developments of the method, of the semiconductor component and of the optical element are dependent in each case
  • a substrate is provided in a first step. On the substrate at least partially an electrically conductive layer
  • the electrically conductive layer is suitable in this case, in particular, with a protic
  • Reactant at least partially form a salt.
  • On the electrically conductive layer is a
  • Electrophoretic particulate layer is then at least the electrically conductive layer in the protic
  • Reactant introduced so that the electrically conductive layer at least partially forms a salt with a component of the protic reactant.
  • the material M of the electrically conductive layer is in this case reacted as follows with a protic reaction partner of the general formula ROH as follows:
  • the aluminum forms with water as a protic reactant as follows a salt:
  • the water as a protic reactant can be present as liquid or gaseous as water vapor.
  • hydrochloric acid as
  • electrically conductive layer can be used.
  • the salt formation would then proceed according to the following scheme, for example:
  • the electrically conductive layer has sodium
  • the sodium forms protic with water
  • Reactant usually a salt from as follows:
  • the silicon generally forms a salt with hydrochloric acid as the protic reactant, as follows:
  • the chemical reaction between the material of the electrically conductive layer and the protic reactant can usually by addition of bases or alkalis
  • Reaction between the material of the electrically conductive Layer and the protic reactant can continue to take place directly in the protic reactant or in an aprotic solvent, the
  • protic reactant is added in an appropriate amount.
  • Electrophoretic particulate layer has the advantage that it usually no longer comes to an inhomogeneous electrophoretic deposition due to different materials of the substrate. Furthermore, non-conductive substrates with the aid of the electrically conductive layer with an electrophoretically deposited
  • Another advantage of the method described here is that due to the
  • the present method is based in particular on the idea that the electrically conductive layer is at least partially converted into a salt after the electrophoretic deposition.
  • a salt typically has a comparatively low electrical conductivity over other materials, such as a metal, a metal alloy, a semimetal, or a semiconductor. In this way, the electrical conductivity of the electrically conductive layer, and thus the
  • Probability of short circuits within the later component at least reduced.
  • the substrate it is possible to coat the substrate to be coated over its entire area with the electrically conductive layer. It is with Advantage further possible to apply the electrically conductive layer contiguous over electrical contacts of the substrate, which may even have different polarities.
  • Procedure is the electrically conductive layer in the
  • Solvent of the electrophoresis bath By the term “chemically inert” is meant that the electrically conductive layer does not undergo any significant chemical reaction with the organic solvent, and in reality a minor chemical reaction between two materials can not be completely ruled out as a rule.
  • the electrically conductive layer comprises a metal, a metal alloy, a semi-metal or a
  • the electrically conductive layer comprises or is made of one of the following materials
  • the electrically conductive layer particularly preferably has a thickness of between 20 nm and 20 ym inclusive. Particularly preferably, the electrically conductive layer has a thickness between 20 nm and
  • the electrical layer preferably has an electrical conductivity of at least 1 Siemens / meter. Such electrical conductivity advantageously allows sufficient charge transport even with comparatively thin electrically conductive layers having a thickness of between about 20 nm and 300 nm inclusive.
  • the protic reactant is in a liquid or gas
  • the protic reactant is water, an alcohol, a carboxylic acid, a mineral acid, an amine, an amide, or a mixture of at least two
  • the electrically conductive layer may be, for example, by thermal vapor deposition or sputtering on the substrate
  • the electrophoretic particulate layer is targeted only to partial areas of the substrate
  • the electrophoresis bath contains as organic solvent one of the following substances: alcohol, ketone, aromatic, aldehyde. As a rule, these materials do not react, or only to a very limited extent, with a metal, a metal alloy, a semimetal or a semiconductor material, ie the preferred material for the electrically conductive layer.
  • electrically conductive layer preferably partially or completely converted into a salt.
  • the formed salt either remains in the device or is at least partially washed out with a solvent.
  • the electrophoretically applied particulate layer usually has pores through which the protic
  • Reactant in liquid or gaseous form but also the solvent for washing out the salt to the electrically conductive layer or to the
  • Reactants and the electrically conductive layer can also diffuse into the solvent for washing out.
  • the electrophoretically deposited layer can
  • particles of a phosphor or particles of a reflective material or from particles of a phosphor or particles of a reflective material or from particles of a phosphor or particles of a reflective
  • Titanium oxide or alumina used as the phosphor for the electrophoretically deposited particulate layer.
  • the phosphor for the electrophoretically deposited particulate layer for example, one of the following materials may be used: rare earth-doped garnets, rare earth-doped alkaline earth sulfides, rare earth-doped thiogallates, rare earth-doped aluminates, rare-earth-doped silicates, rare earths doped orthosilicates, rare earth doped chlorosilicates, rare earth doped ones
  • Ce 3+ -doped garnets such as YAG: Ce and LuAG: Ce are suitable as phosphors.
  • LuAG Ce
  • Phosphorus is about (Y, Lu) 3 (Al, Ga) 5O12: Ce 3+ .
  • Eu 2+ -doped nitrides such as CaAlSiN 3 : Eu 2+ , (Ba, Sr) 2 Si 5 N 8 : Eu 2+ ; Eu 2+ -doped sulfides, SiONe, SiAlON,
  • Orthosilicates such as (Ba, Sr) 2 S1O 4 : Eu 2+ ,
  • Chlorosilicates Chlorosilicates, chlorophosphates, BAM
  • a carrier with at least one light-emitting diode chip is used as the substrate here.
  • the carrier is, for example, a ceramic element, to which the at least one light-emitting diode chip is applied.
  • the electrically conductive layer is applied over the carrier and / or over the LED chip and For example, a phosphor layer deposited as electrophoretic particulate layer in the Elektrophoresebad.
  • Phosphorus layer is intended to be
  • Electromagnetic radiation of the LED chip at least partially convert into radiation of another wavelength range.
  • Particularly preferred in this case is the electrophoretic particulate phosphor layer at least on the
  • electrophoretic particulate phosphor layer and a glass substrate are used, which is intended to be introduced into the beam path of the LED chip.
  • Phosphor layer for example, on an optical element - such as a lens - are deposited, the
  • electromagnetic radiation within a light emitting diode is used.
  • the optical element may be, for example, a glass lens or a silicone lens.
  • an electrophoretic particulate layer can be deposited on the carrier with the at least one light-emitting diode chip, which comprises a reflective material or is formed from a reflective material.
  • the carrier may be a ceramic substrate act as described above.
  • the carrier it is also possible for the carrier to be formed by a leadframe onto which at least one light-emitting diode chip is applied.
  • the carrier is a
  • Housing body for example with a recess in which the LED chip is mounted.
  • the housing body has, for example, a plastic material or is formed from a plastic material. Also, such a housing body can be at least in places with an electrophoretically deposited by means of the electrically conductive layer
  • FIG. 12 shows a schematic sectional view of a
  • the substrate 1 is shown schematically in Figures 1 and 2, wherein Figure 2 is a schematic sectional view of the substrate 1 along the line A-A 'of Figure 1 shows.
  • the substrate 1 is a carrier 2, on which a multiplicity of light-emitting diode chips 3 are applied.
  • the carrier 2 has first metallic contact regions 4 and second metallic contact regions 5 which are intended for
  • Each LED chip 3 is at a first
  • connection area 4 and connected electrically conductively by means of a bonding wire 6 with a second connection region 5.
  • the light-emitting diode chips 3 are arranged on the carrier 2 in the form of a matrix.
  • Each light-emitting diode chip 3 comprises a radiation-generating active zone, which is suitable during operation of the
  • LED chips 3 visible light of a first
  • an electrically conductive layer 7 is applied to the substrate 1.
  • the electrically conductive layer 7 is applied over the whole area to the carrier 1, for example by vapor deposition or sputtering.
  • the electrically conductive layer 7 is suitable for at least partially forming a salt with a protic reactant.
  • the electrically conductive layer 7 comprises one of the following materials or consists of one of the following materials: lithium,
  • Layer 7 coated substrate 1 is introduced into an electrophoresis bath 8.
  • the Elektrophoresebad 8 is in the present case of an organic solvent 9 and
  • Phosphor particles 10 are intended to be deposited on the electrically conductive layer 7.
  • the electrophoresis bath 8 contains, for example, one of the following substances: alcohol, ketone, aromatic, aldehyde.
  • the coated substrate 1 is taken out of the electrophoresis bath 8 again.
  • the substrate 1 provided with the electrophoretically deposited particulate phosphor layer 11 is shown schematically in FIG. This one
  • electrophoretically deposited phosphor layer 11 is advantageously particularly uniform in thickness. This leads to a particularly homogeneous light emission in the finished components. Furthermore, in the
  • Electrophoresis method with advantage also the side surfaces of the LED chips 3 coated so that light of the
  • LED chips 3 which is emitted via the side surfaces, is also at least partially converted. This also contributes to a more homogeneous color impression of the light emitted by the finished component.
  • the substrate 1 with the electrically conductive layer 7 and the electrophoretically deposited particulate phosphor layer 11 becomes a protic
  • Reactant 12 introduced so that the electrically conductive layer 7 at least partially forms a salt with the protic reactant 12.
  • the protic reactant 12 is a liquid.
  • the protic reactant 12 may also be present in the gas phase.
  • LED chips 3 and the electrophoretically deposited particulate phosphor layer 11 is now a layer 7 ', which is at least partially formed as a salt.
  • the electrically conductive layer 7 is at least partially converted into a salt such that
  • Short circuits for example between the first 4
  • Connection area and the second terminal region 5 of a LED chip 3 can be avoided.
  • the salt formed is now at least partially washed out of the component with a solvent (FIG. 8).
  • Embodiment of Figures 1 to 8 in the substrate 1 to an optical element in the substrate 1 to an optical element.
  • a lens is used as the optical element, which may be made of silicone or glass, for example.
  • the lens is in one
  • the lens has a radiation entrance surface 13 and a
  • an electrically conductive layer 7 is deposited on the radiation exit surface 14 of the lens, for example by sputtering or vapor deposition.
  • the electrically conductive layer 7 comprises, for example, a metal, a Metal alloy, a semi-metal or a semiconductor material.
  • the material of the electrically conductive layer 7 is converted to a salt by means of a protic reaction partner 12 (FIG. IIB).
  • this reaction is particularly preferably carried out as completely as possible, since a salt differs from the electrically conductive one
  • Layer 7 is particularly well transparent to visible light. Furthermore, the salt is particularly preferred in the
  • This embodiment has been washed out of the optical element in order to achieve a particularly good transmission of the optical element for visible light.
  • the components are separated, so that each component has only one LED chip 3 (not shown).
  • Embodiment of Figure 12 has a light-emitting diode chip 3, which is incorporated in a recess 15 of a housing body 16. In the emission direction following the LED chip 3, an optical element is applied to the housing body 16, the radiation exit surface 14 of which has an electrophoretically deposited particulate
  • Phosphor layer 11 is provided.
  • the production of such an optical component has already been described in detail with reference to FIGS. 9 to IIB.
  • the LED chip 3 in the present case transmits radiation of a first one
  • Wavelength range which includes in particular blue light.
  • the blue light emitted by the light-emitting diode chip 3 enters the optical element through the radiation entrance surface 13 and passes through the optical element. After the exit of the light through the
  • the light passes through the electrophoretically deposited particulate phosphor layer 11, which converts part of the blue light emitted by the light-emitting diode chip 3 into yellow light.
  • the optoelectronic component transmits
  • a phosphor but also a reflective material can be deposited on a substrate 1 using the method described here. Two such embodiments of the method are described in
  • a substrate 1 which has a
  • Carrier having a first metallic terminal portion 4 and four second metallic terminal portions 5. On the first connection area 4 is present a
  • connection areas 4, 5 may be, for example, parts of a leadframe and the support 2 may be a housing body, such as plastic, in which the leadframe is embedded.
  • an electrically conductive layer 7 is applied to the substrate 1 (not
  • the light-emitting diode chip 3 is protected by means of a shadow mask or a photoresist layer, so that the surface of the light-emitting diode chip 3 remains free of the electrically conductive layer 7.
  • the electrically conductive layer 7 is thus applied to the substrate in a structured manner.
  • Electrophoretic particle of a reflective material is an electrophoretic particle of a reflective material.
  • the material of the electrically conductive layer 7 is at least partially converted to a salt by means of a protic reactant 12 so that there is no longer any electrically conductive connection through the electrically conductive layer 7 between the electrical connection regions 4, 5 of the substrate 1 (FIG. Not
  • a substrate 1 which comprises a support 2 made, for example, from a ceramic such as aluminum oxide or aluminum nitride.
  • a first metallic connection region 4 and a second metallic connection region 5 are applied.
  • a first metallic terminal portion 4 is a substrate 1 which comprises a support 2 made, for example, from a ceramic such as aluminum oxide or aluminum nitride.
  • an electrically conductive layer 7 is applied (not shown), wherein the surface of the LED chip 3 with a shadow mask or a
  • Photoresist layer is protected, so that the surface of the LED chip 3 remains free of the electrically conductive layer 7.
  • Electrophoretic process an electrophoretic layer 11 deposited on the electrically conductive layer 7, wherein the electrophoretic layer 11 particles of a
  • the material of the electrically conductive layer 7 is again by means of a protic
  • Reactant 12 converted to a salt (not

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un procédé de dépôt d'une couche électrophorétique (11), comprenant les étapes suivantes : préparer un substrat (1), appliquer sur au moins certaines parties du substrat (1) une couche conductrice d'électricité (7) qui est appropriée à former au moins partiellement un sel avec un réactif protique (12), déposer une couche électrophorétique (11) sur la couche conductrice d'électricité (7), ledit dépôt étant réalisé dans un bain d'électrophorèse (8), et introduire l'au moins une couche conductrice d'électricité (7) dans le réactif protique (8), de manière à ce que la couche conductrice d'électricité (7) forme au moins partiellement un sel avec le réactif protique (12). En outre, l'invention concerne un composant optoélectronique et un élément optique.
PCT/EP2013/062618 2012-06-28 2013-06-18 Procédé de dépôt d'une couche de particules déposée par électrophorèse, composant à semi-conducteur émettant un rayonnement et élément optique Ceased WO2014001149A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012105691.9 2012-06-28
DE102012105691.9A DE102012105691B4 (de) 2012-06-28 2012-06-28 Verfahren zur Abscheidung einer elektrophoretisch abgeschiedenen partikulären Schicht, strahlungsemittierendes Halbleiterbauelement und optisches Element

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WO2014001149A1 true WO2014001149A1 (fr) 2014-01-03

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DE (1) DE102012105691B4 (fr)
WO (1) WO2014001149A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013110114A1 (de) 2013-09-13 2015-04-02 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102015107586A1 (de) 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung optoelektronischer Bauelemente und oberflächenmontierbares optoelektronisches Bauelement
WO2016180732A1 (fr) 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Procédé de fabrication de composants optoélectroniques et composant optoélectronique à montage en surface
DE102022122981A1 (de) * 2022-09-09 2024-03-14 Ams-Osram International Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE102022122980A1 (de) * 2022-09-09 2024-03-14 Ams-Osram International Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012108704A1 (de) 2012-09-17 2014-03-20 Osram Opto Semiconductors Gmbh Verfahren zur Fixierung einer matrixfreien elektrophoretisch abgeschiedenen Schicht auf einem Halbleiterchip und strahlungsemittierendes Halbleiterbauelement
DE102013109031B4 (de) * 2013-08-21 2021-11-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102013112687A1 (de) 2013-11-18 2015-05-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer multifunktionellen Schicht, Elektrophorese-Substrat, Konverterplättchen und optoelektronisches Bauelement
DE102013114466A1 (de) 2013-12-19 2015-06-25 Osram Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102014100542A1 (de) 2014-01-20 2015-07-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer lateral strukturierten Schicht und optoelektronisches Halbleiterbauteil mit einer solchen Schicht

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US6576488B2 (en) 2001-06-11 2003-06-10 Lumileds Lighting U.S., Llc Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor
JP2007134378A (ja) * 2005-11-08 2007-05-31 Nichia Chem Ind Ltd 発光装置およびその形成方法
JP2007305773A (ja) * 2006-05-11 2007-11-22 Nichia Chem Ind Ltd 発光装置及びその製造方法

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US6642652B2 (en) * 2001-06-11 2003-11-04 Lumileds Lighting U.S., Llc Phosphor-converted light emitting device

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US6576488B2 (en) 2001-06-11 2003-06-10 Lumileds Lighting U.S., Llc Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor
JP2007134378A (ja) * 2005-11-08 2007-05-31 Nichia Chem Ind Ltd 発光装置およびその形成方法
JP2007305773A (ja) * 2006-05-11 2007-11-22 Nichia Chem Ind Ltd 発光装置及びその製造方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013110114A1 (de) 2013-09-13 2015-04-02 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102015107586A1 (de) 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung optoelektronischer Bauelemente und oberflächenmontierbares optoelektronisches Bauelement
WO2016180732A1 (fr) 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Procédé de fabrication de composants optoélectroniques et composant optoélectronique à montage en surface
DE102015107588A1 (de) 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung optoelektronischer Bauelemente und oberflächenmontierbares optoelektronisches Bauelement
WO2016180897A1 (fr) * 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Procédé de fabrication de composants optoélectroniques et composant optoélectronique à montage en surface
JP2018515920A (ja) * 2015-05-13 2018-06-14 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス部品を製造する方法および表面実装用オプトエレクトロニクス部品
US10243117B2 (en) 2015-05-13 2019-03-26 Osram Opto Semiconductors Gmbh Method for producing optoelectronic devices and surface-mountable optoelectronic device
US10490707B2 (en) 2015-05-13 2019-11-26 Osram Opto Semiconductors Gmbh Method of producing optoelectronic components and surface-mounted optoelectronic component
DE102015107588B4 (de) 2015-05-13 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung optoelektronischer Bauelemente und oberflächenmontierbares optoelektronisches Bauelement
DE102015107586B4 (de) 2015-05-13 2023-10-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung optoelektronischer Bauelemente und oberflächenmontierbares optoelektronisches Bauelement
DE102022122981A1 (de) * 2022-09-09 2024-03-14 Ams-Osram International Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE102022122980A1 (de) * 2022-09-09 2024-03-14 Ams-Osram International Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement

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