WO2014002747A3 - Ensemble cible - Google Patents

Ensemble cible Download PDF

Info

Publication number
WO2014002747A3
WO2014002747A3 PCT/JP2013/066047 JP2013066047W WO2014002747A3 WO 2014002747 A3 WO2014002747 A3 WO 2014002747A3 JP 2013066047 W JP2013066047 W JP 2013066047W WO 2014002747 A3 WO2014002747 A3 WO 2014002747A3
Authority
WO
WIPO (PCT)
Prior art keywords
sputtering target
brazing material
reverse surface
target assembly
backing plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2013/066047
Other languages
English (en)
Japanese (ja)
Other versions
WO2014002747A2 (fr
Inventor
仁実 松村
中根 靖夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobelco Research Institute Inc
Original Assignee
Kobelco Research Institute Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobelco Research Institute Inc filed Critical Kobelco Research Institute Inc
Priority to CN201380033320.0A priority Critical patent/CN104411861A/zh
Priority to KR1020147035936A priority patent/KR20150013876A/ko
Publication of WO2014002747A2 publication Critical patent/WO2014002747A2/fr
Publication of WO2014002747A3 publication Critical patent/WO2014002747A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

 L'invention concerne un ensemble cible qui comprend une cible de pulvérisation, une plaque de support, et un matériau de brasage, et dans lequel la surface arrière de la cible de pulvérisation est reliée à la plaque de support, le matériau de brasage étant situé entre celles-ci. La cible de pulvérisation est composée d'un alliage Cu-Mn contenant de 2 à 30 % d'atomes de Mn, et la surface projetée totale, sur la surface arrière de la cible de pulvérisation, des porosités dans le matériau de brasage est d'au plus 16% par rapport à la surface de la totalité de la région de liaison sur la surface arrière de la cible de pulvérisation.
PCT/JP2013/066047 2012-06-26 2013-06-11 Ensemble cible Ceased WO2014002747A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201380033320.0A CN104411861A (zh) 2012-06-26 2013-06-11 靶接合体
KR1020147035936A KR20150013876A (ko) 2012-06-26 2013-06-11 타겟 접합체

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-143497 2012-06-26
JP2012143497A JP5952653B2 (ja) 2012-06-26 2012-06-26 ターゲット接合体

Publications (2)

Publication Number Publication Date
WO2014002747A2 WO2014002747A2 (fr) 2014-01-03
WO2014002747A3 true WO2014002747A3 (fr) 2014-03-06

Family

ID=49783965

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/066047 Ceased WO2014002747A2 (fr) 2012-06-26 2013-06-11 Ensemble cible

Country Status (5)

Country Link
JP (1) JP5952653B2 (fr)
KR (1) KR20150013876A (fr)
CN (1) CN104411861A (fr)
TW (1) TWI516625B (fr)
WO (1) WO2014002747A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10760156B2 (en) * 2017-10-13 2020-09-01 Honeywell International Inc. Copper manganese sputtering target
US11035036B2 (en) 2018-02-01 2021-06-15 Honeywell International Inc. Method of forming copper alloy sputtering targets with refined shape and microstructure
JP6677853B1 (ja) * 2019-02-07 2020-04-08 住友化学株式会社 スパッタリングターゲット、ターゲット材とバッキングプレートを接合する方法およびスパッタリングターゲットの製造方法
US12217948B2 (en) 2021-03-26 2025-02-04 Sumitomo Chemical Company, Limited Sputtering target, method of bonding target material and backing plate, and method of manufacturing sputtering target
KR102707659B1 (ko) 2021-11-17 2024-09-19 바짐테크놀로지 주식회사 스퍼터링 타겟 접합체
KR102815335B1 (ko) 2022-11-17 2025-06-02 바짐테크놀로지 주식회사 스퍼터링 타겟 접합방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6228066A (ja) * 1985-07-26 1987-02-06 Tanaka Kikinzoku Kogyo Kk スパツタリング用タ−ゲツトの製造方法
JPH06128735A (ja) * 1992-10-20 1994-05-10 Mitsubishi Kasei Corp スパッタリングターゲットの製造方法
JPH07509026A (ja) * 1992-07-08 1995-10-05 マティリアルズ リサーチ コーポレイション スパッタリングターゲットを裏当て部材にはんだ付けする方法
JP4065959B2 (ja) * 2004-08-31 2008-03-26 国立大学法人東北大学 液晶表示装置、スパッタリングターゲット材および銅合金
JP2010018883A (ja) * 2008-06-10 2010-01-28 Tosoh Corp 円筒形スパッタリングターゲット及びその製造方法
JP2010053445A (ja) * 2008-08-01 2010-03-11 Mitsubishi Materials Corp フラットパネルディスプレイ用配線膜形成用スパッタリングターゲット

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2014787B1 (fr) * 2006-10-03 2017-09-06 JX Nippon Mining & Metals Corporation CIBLE DE PULVÉRISATION CATHODIQUE D'ALLIAGE Cu-Mn

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6228066A (ja) * 1985-07-26 1987-02-06 Tanaka Kikinzoku Kogyo Kk スパツタリング用タ−ゲツトの製造方法
JPH07509026A (ja) * 1992-07-08 1995-10-05 マティリアルズ リサーチ コーポレイション スパッタリングターゲットを裏当て部材にはんだ付けする方法
JPH06128735A (ja) * 1992-10-20 1994-05-10 Mitsubishi Kasei Corp スパッタリングターゲットの製造方法
JP4065959B2 (ja) * 2004-08-31 2008-03-26 国立大学法人東北大学 液晶表示装置、スパッタリングターゲット材および銅合金
JP2010018883A (ja) * 2008-06-10 2010-01-28 Tosoh Corp 円筒形スパッタリングターゲット及びその製造方法
JP2010053445A (ja) * 2008-08-01 2010-03-11 Mitsubishi Materials Corp フラットパネルディスプレイ用配線膜形成用スパッタリングターゲット

Also Published As

Publication number Publication date
JP2014005517A (ja) 2014-01-16
TW201416473A (zh) 2014-05-01
TWI516625B (zh) 2016-01-11
CN104411861A (zh) 2015-03-11
WO2014002747A2 (fr) 2014-01-03
JP5952653B2 (ja) 2016-07-13
KR20150013876A (ko) 2015-02-05

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