WO2014002773A1 - 成膜装置 - Google Patents

成膜装置 Download PDF

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Publication number
WO2014002773A1
WO2014002773A1 PCT/JP2013/066261 JP2013066261W WO2014002773A1 WO 2014002773 A1 WO2014002773 A1 WO 2014002773A1 JP 2013066261 W JP2013066261 W JP 2013066261W WO 2014002773 A1 WO2014002773 A1 WO 2014002773A1
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WO
WIPO (PCT)
Prior art keywords
film
chamber
organic compound
vapor discharge
film forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2013/066261
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English (en)
French (fr)
Inventor
齋藤　和彦
正行 飯島
貴啓 廣野
建治 中森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to EP13808892.7A priority Critical patent/EP2868769A4/en
Priority to CN201380034843.7A priority patent/CN104379804B/zh
Priority to JP2014522529A priority patent/JP5764721B2/ja
Priority to KR20147036523A priority patent/KR20150008927A/ko
Publication of WO2014002773A1 publication Critical patent/WO2014002773A1/ja
Priority to US14/584,226 priority patent/US20150114291A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2252/00—Sheets
    • B05D2252/02—Sheets of indefinite length

Definitions

  • the present invention relates to a technique of a film forming apparatus for forming an organic compound film on a film in a vacuum.
  • a high molecular organic compound film is formed on a film, for example, a low molecular organic compound monomer is coated on the film to form an organic compound layer, and heat is applied to the organic compound layer.
  • a polymer organic compound film is formed by curing by irradiating energy rays.
  • the present invention has been made in consideration of such problems of the conventional technology.
  • the object of the present invention is to increase an organic compound film having a uniform thickness on the film while transporting the film in a vacuum chamber.
  • the object is to provide a technique for forming at a film forming speed.
  • the present invention made to achieve the above object is a film forming apparatus for transporting a film fed from an original fabric roll in contact with a central roller in a vacuum chamber and forming an organic compound film on the film.
  • a vapor discharge device disposed in a film forming chamber provided in the vacuum chamber and having a vapor discharge unit for discharging a vapor of an organic compound and blowing the vapor on a film on the central roller; and formed on the central roller
  • a vacuum evacuation device having an energy ray injection device for irradiating the organic compound layer with an energy ray to cure the organic compound layer, wherein the vapor discharge device and the film forming chamber can be controlled independently
  • the pressure in the vapor discharge apparatus is greater than the pressure in the film formation chamber, and the difference between the pressure in the vapor discharge apparatus and the pressure in the film formation chamber is It is intended for evacuating to be constant.
  • the present invention is also effective when the flow rate of the rare gas controlled to a predetermined temperature is controlled and supplied to the vapor discharge device.
  • a curing chamber in which the energy beam injection device is disposed, and a buffer chamber communicated with the curing chamber and the film forming chamber are provided in the vacuum chamber, and the curing chamber and the buffer chamber are It is also effective when connected to independently controllable vacuum exhaust devices.
  • the pressure in the vapor discharge device is larger than the pressure in the film forming chamber, and Since the vacuum evacuation is performed so that the difference between the pressure in the vapor discharge apparatus and the pressure in the film forming chamber is constant, an organic compound layer having a uniform film thickness can be formed on the film conveyed by the central roller. .
  • a polymer organic compound film having a uniform film thickness is formed by irradiating an energy beam to an organic compound layer having a uniform film thickness to polymerize and cure the organic compound layer. Can do.
  • the pressure in the vapor discharge device is easily made larger than the pressure in the film forming chamber. Therefore, the pressure difference between the vapor discharge device and the film formation chamber can be increased to improve the film formation speed.
  • a curing chamber in which the energy beam injection device is disposed and a buffer chamber communicated with the curing chamber and the film forming chamber are provided in the vacuum chamber, and the curing chamber and the buffer chamber are independently provided.
  • differential exhaust with a large pressure difference can be performed not only between the vapor discharge device and the film forming chamber, but also between the film forming chamber, the buffer chamber, and the curing chamber. Therefore, the pressure difference between the chambers can be increased to improve the film formation rate.
  • an organic compound film having a uniform thickness can be formed on a film conveyed by a central roller in a vacuum chamber.
  • FIG. 1 Overall view showing an internal configuration of an embodiment of a film forming apparatus according to the present invention
  • FIG. 1A is an overall view showing an internal configuration of an embodiment of a film forming apparatus according to the present invention
  • FIG. 1B is a main part configuration diagram of the film forming apparatus.
  • 2 (a) and 2 (b) show a vapor discharge portion of the vapor discharge device
  • FIG. 2 (a) is a front view
  • FIG. 2 (b) is a side view.
  • the film forming apparatus 1 forms a film on a film 10 in a vacuum chamber 2.
  • a cylindrical central roller 3 for contacting and transporting the film 10 is provided in the vicinity of the central portion inside the vacuum chamber 2.
  • a film feeding / winding chamber 4 and a buffer chamber 5 are provided around the central roller 3.
  • a film forming chamber 6 and a curing chamber 7 are provided.
  • the film feeding and winding chamber 4 includes a plate-shaped first partition wall 11 provided in the vicinity of the central roller 3 and folded in multiple stages, and one side of the vacuum chamber 2 with respect to the central roller 3 (here Then, it is formed by a space surrounded by the inner wall on the lower side in the figure.
  • the first partition 11 is formed so that the portion in the vicinity of the center roller 3 is close to the side surface and both bottom surfaces of the center roller 3, thereby the first partition 11 and the side surface of the center roller 3. It is comprised so that the film 10 can pass in the clearance gap between them.
  • a film roll 41 of the film 10 that is a film formation target is disposed in the film supply roll-up chamber 4, and the film 10 fed from the film roll 41 is in close contact with the surface of the central roller 3. The direction is changed and the film is taken up by a take-up roller 42 provided in the film take-up take-up chamber 4.
  • a static eliminating device 43 that performs static elimination on the film 10 after film formation is provided.
  • the static eliminator 43 is for preventing the film 10 after film formation from sticking to the central roller 3 due to static electricity.
  • the buffer chamber 5 includes a first partition 11, a second partition 12 having a multistage bent plate shape provided in the vicinity of the central roller 3 so as to face the first partition 11, and a vacuum chamber 2. It is formed by a space surrounded by an inner wall (here, the left and right inner walls in the figure).
  • the second partition wall 12 is formed so that the portion in the vicinity of the center roller 3 is close to the side surface and both bottom surfaces of the center roller 3. It is comprised so that the film 10 can pass in the clearance gap between them.
  • the film formation chamber 6 is surrounded by a third partition wall 13 bent in multiple stages provided inside the buffer chamber 5 and an inner wall on one side (here, the left side in the drawing) of the vacuum chamber 2. It is formed by a space.
  • the third partition wall 13 is formed so that the portion in the vicinity of the center roller 3 is close to the side surface and both bottom surfaces of the center roller 3, thereby the third partition wall 13 and the side surface of the center roller 3. It is comprised so that the film 10 can pass in the clearance gap between them.
  • a vapor discharge portion 82 of a vapor discharge device 8 described later is disposed in the film forming chamber 6.
  • the curing chamber 7 is formed by a space surrounded by the second partition wall 12 and the inner wall of the other side (here, the upper side in the drawing) of the vacuum chamber 2 with respect to the central roller 3.
  • an energy beam injection device 9 that emits an energy beam in the direction of the central roller 3 is provided in a portion communicating with the curing chamber 7 in the upper part of the vacuum chamber 2.
  • the film feeding / winding chamber 4, the buffer chamber 5, the film forming chamber 6, and the curing chamber 7 described above are connected to first to fourth vacuum evacuation devices 40, 50, 60, and 70 that can be controlled independently.
  • first to fourth vacuum evacuation devices 40, 50, 60, and 70 that can be controlled independently.
  • the vapor discharge device 8 of the present embodiment has a vaporization unit 81 that vaporizes the liquid organic compound monomer 33, and the vaporization unit 81 is the first in the film formation chamber 6.
  • the third vacuum exhaust device 60 is connected to a fifth vacuum exhaust device 80 that can be controlled independently.
  • a cylindrical vapor discharge portion 82 is connected to the vaporization portion 81 via a connection portion 81a having a bellows, and the vapor discharge portion 82 is provided in the film forming chamber 6 of the vacuum chamber 2. Is arranged.
  • the vaporizer 81 is provided with a pressure gauge 20 for measuring the pressure in the vaporizer 81, and the pressure gauge 20 is configured to send the measured pressure information to the controller 18 having a computer or the like. (See FIG. 1).
  • the control unit 18 is electrically connected to a film forming pressure gauge 21 that measures the pressure in the film forming chamber 6, and is configured to receive pressure information in the film forming chamber 6 measured by the film forming pressure gauge 21. Has been.
  • the control unit 18 is electrically connected to a third evacuation device 60 that evacuates the film forming chamber 6, and is based on the result obtained in the film forming pressure gauge 21 provided in the film forming chamber 6.
  • the pressure inside the film forming chamber 6 is configured to be controlled.
  • a medium circulation path (not shown) is provided inside the casing of the vaporization unit 81, and a medium controlled to a predetermined temperature is provided between the medium circulation path and the first temperature adjusting means 19. It is configured to circulate.
  • a medium circulation path (not shown) is provided inside the housing of the vapor discharge section 82, and the medium controlled to a predetermined temperature is circulated between the medium circulation path and the second temperature adjusting means 83. It is configured.
  • a monomer supply source 30 is provided outside the vaporization section 81, and a liquid organic compound monomer (hereinafter referred to as “organic compound monomer”) 33 is supplied from the monomer supply source 30 to the pipe 31 and the organic compound. It is configured to be introduced into the vaporization unit 81 via the introduction unit 22.
  • the monomer supply source 30 of the present embodiment feeds a rare gas 34 such as an inert gas into a liquid organic compound monomer 33 accommodated in a container 32, and the organic compound monomer via a pipe 31 by its pressure. 33 is supplied to the organic compound introduction unit 22.
  • the organic compound introduction unit 22 according to the present embodiment includes a disperser 22a that is provided above the vaporization unit 81 and that disperses the liquid organic compound monomer 33 and sprays it in the form of a mist.
  • a vaporizer 23 is provided below the disperser 22a in the vaporization unit 81 and vaporizes while transporting the introduced organic compound monomer 33.
  • the vaporizer 23 includes a plurality of (four in the present embodiment) first to fourth vaporization members 24A, 24B, 24C, and 24D formed in, for example, a flat plate shape.
  • the first to fourth vaporization members 24A to 24D of the present embodiment are arranged side by side in an obliquely downward direction, and are arranged so as to deliver the organic compound monomer 33 from above to below by being inclined to one side. It is configured.
  • the first to fourth vaporization members 24A to 24D are configured to change and adjust the inclination angles, respectively.
  • Each of the first to fourth vaporizing members 24A to 24D is provided with a medium circulation path (not shown) therein, and can be controlled independently by third to sixth temperature adjusting means 26, 27 by a medium circulation method. 28 and 29, respectively.
  • the organic compound monomer 33 is transferred from the uppermost first vaporization member 24A to the lower second vaporization member 24B, and the organic compound monomer 33 is transferred from the second vaporization member 24B to the lower third vaporization member 24C. Further, the organic compound monomer 33 is transferred from the third vaporizing member 24C to the lower fourth vaporizing member 24D. And in the vaporization part 81 which has such a structure, when the organic compound monomer 33 is conveyed and delivered, the organic compound monomer 33 is heated and vaporized.
  • a rare gas supply source 35 is provided outside the vaporization unit 81, and a rare gas such as an inert gas sent from the rare gas supply source 35 is introduced into the vaporization unit 81 via the mass flow controller 36. Is configured to do.
  • the mass flow controller 36 is connected to the control unit 18 and controls the introduction amount of the rare gas based on the results obtained in the pressure gauge 20 and the film forming pressure gauge 21.
  • the vapor discharge portion 82 of the vapor discharge device 8 of the present embodiment formed in a cylindrical shape is a vapor of an organic compound monomer from the vaporization portion 81. 37 is sent, and the internal pressure is the same as the pressure in the vaporizing section 81.
  • release part 82 has the discharge
  • the steam discharge portion 82 is disposed so that the rotation axis O 1 thereof is parallel to the rotation axis O 2 of the central roller 3, and the steam discharge port 85 is parallel to these rotation axes O 1 and O 2.
  • the film 10 on the central roller 3 is disposed in close proximity to the film 10.
  • the vapor discharge port 85 is formed to be slightly narrower than the width of the central roller 3 (film 10), and is configured to spray the organic compound monomer vapor 37 linearly in the width direction against the surface of the film 10. Yes.
  • the fifth vacuum exhaust device 80 is operated to vaporize the vapor discharge device 8.
  • the pressure in 81 is evacuated to a predetermined value, and the first to fourth evacuation devices 40, 50, 60, 70 are operated to move the film unwinding chamber 4, the buffer chamber 5, and the film forming chamber. 6.
  • the pressure in the curing chamber 7 is evacuated to a predetermined value.
  • the second to fourth vacuum evacuation devices 50 to 70 are operated so that the pressure in the buffer chamber 5 is higher than the pressure in the curing chamber 7 and the pressure in the film forming chamber 6 is higher than the pressure in the buffer chamber 5.
  • the inclination angles of the first to fourth vaporization members 24A to 24D in the vaporization unit 81 are set to predetermined angles, and the third to sixth temperature adjustment means 26 to 29 are operated.
  • the first to fourth vaporization members 24A to 24D are each controlled to a predetermined temperature.
  • the second temperature adjusting means 83 is operated to control the temperature of the vapor discharge part 82 to a predetermined temperature.
  • a predetermined amount of rare gas is introduced from the rare gas supply source 35 through the mass flow controller 36 into the vaporization unit 81, and a predetermined amount from the monomer supply source 30 through the pipe 31 and the organic compound introduction unit 22.
  • the liquid organic compound monomer 33 is introduced into the vaporization unit 81.
  • the mist-like organic compound monomer 33 is supplied to the upper first vaporization member 24 ⁇ / b> A from above by the disperser 22 a provided in the upper part of the vaporization unit 81.
  • the supplied organic compound monomer 33 is transferred from the first vaporization member 24A to the second vaporization member 24B, from the second vaporization member 24B to the third vaporization member 24C, and further from the third vaporization member 24C to the second vaporization member 24C. 4 is delivered to the vaporizing member 24D, and the organic compound monomer 33 is heated and vaporized during the transportation and delivery.
  • the vaporized organic compound monomer 33 is sent to the vapor discharge portion 82 and is ejected from the vapor discharge port 85 of the vapor discharge portion 82, and is conveyed in contact with the central roller 3 as shown in FIG.
  • An organic compound monomer vapor 37 is blown onto the film 10 to form an organic compound monomer layer 38 on the film 10.
  • the pressure in the vapor discharge device 8 (vaporization unit 81 and vapor discharge unit 82) is larger than the pressure in the film forming chamber 6, and vapor discharge is performed. Vacuum evacuation is performed so that the difference between the pressure in the apparatus 8 and the pressure in the film forming chamber 6 becomes constant.
  • the pressure in the film forming chamber 6 is controlled to a predetermined value by operating the third vacuum evacuation device 60 based on the result obtained in the film forming pressure gauge 21 according to a command from the control unit 18.
  • the mass flow controller 36 is operated to control the introduction amount of the rare gas introduced into the vaporizer 81, thereby controlling the pressure of the vaporizer 81 to a predetermined value.
  • the energy beam 91 is injected from the energy beam injection device 9 to cure the organic compound monomer layer 38 on the film 10.
  • a compound layer 39 is formed (see FIGS. 3A and 3B).
  • the film 10 is neutralized in the film feeding and winding chamber 4, and the film 10 is wound up by the winding roller 42.
  • the pressure in the vapor discharge device 8 is The film conveyed by the central roller 3 is evacuated so as to be larger than the pressure in the film forming chamber 6 and the difference between the pressure in the vapor discharge device 8 and the pressure in the film forming chamber 6 becomes constant. 10 can form the organic compound monomer layer 38 having a uniform film thickness.
  • the organic compound monomer layer 38 having a uniform film thickness is irradiated with an energy beam 91 to be polymerized and cured, whereby a high molecular organic compound having a uniform film thickness is obtained.
  • Layer 39 can be formed.
  • the flow rate of the rare gas controlled to a predetermined temperature is controlled by the mass flow controller 36 and supplied to the vapor discharge device 8, so that the pressure in the vapor discharge device 8 can be easily adjusted.
  • the pressure difference between the vapor discharge device 8 and the film forming chamber 6 can be increased, thereby improving the film forming speed.
  • the vacuum chamber 2 is provided with a curing chamber 7 in which the energy beam emitting device 9 is disposed, and a buffer chamber 5 communicated with the curing chamber 7 and the film forming chamber 6.
  • 7 and buffer chamber 5 are connected to independently controllable fourth and second evacuation devices 70 and 50, respectively, so that not only between vapor discharge device 8 and film formation chamber 6, but also the film formation chamber 6, differential evacuation with a large pressure difference between the buffer chamber 5 and the curing chamber 7 can be performed, thereby making it possible to increase the pressure difference between the chambers and improve the deposition rate.
  • the first to fourth vaporizing members 24A to 24D of the vaporizer 23 are connected to the third to sixth temperature adjusting means 26 to 29, respectively, that can be controlled independently. Therefore, the organic compound monomer 33 having various vaporization temperatures can be vaporized under optimum conditions.
  • the tilt angles of the first to fourth vaporization members 24A to 24D can be changed and adjusted, optimum conditions for the organic compound monomers 33 having various viscosities are obtained. Can be transported and delivered and vaporized.
  • the first and second vacuum evacuation devices 40 and 50 are operated so that the pressure in the film unwinding / winding chamber 4 becomes larger than the pressure in the buffer chamber 5 during film formation. Further, the vapor 37 of the organic compound monomer from the buffer chamber 5 to the film feeding / winding chamber 4 can be prevented.
  • the present invention is not limited to the above-described embodiment, and various changes can be made.
  • the vaporizer of the vapor discharge device is not limited to the above embodiment, and various types can be used as long as they can vaporize a low molecular organic compound.
  • the kind of organic compound used as the raw material of the film in the present invention is not particularly limited, and can be applied to various organic compounds.
  • the type, thickness, and the like of the film that is a film formation target are not particularly limited, and can be applied to various films.

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Description

成膜装置
　本発明は、真空中でフィルム上に有機化合物膜を形成するための成膜装置の技術に関する。
　近年、電子部品等をフィルム上に効率良く形成したいという要望があり、このため、真空槽内において長尺のフィルムを搬送して当該フィルム上に高分子有機化合物からなる膜を形成する技術が提案されている（例えば特許文献１参照）。
　従来、フィルム上に高分子有機化合物膜を形成する場合には、例えば低分子の有機化合物モノマー等をフィルム上に塗布して有機化合物層を形成し、この有機化合物層に対して熱を加えたり、エネルギー線を照射することによって硬化させ、高分子有機化合物膜を形成することが行われている。
　しかし、真空槽内においてこのような方法によってフィルム上に高分子有機化合物膜を形成する場合には種々の課題がある。
　すなわち、真空槽内においてフィルム上に低分子の有機化合物のモノマー等の膜を均一な膜厚で形成することは困難であり、特にフィルムを搬送しながらフィルム上に均一な膜厚の有機化合物膜を高い成膜速度で形成することは非常に困難である。
特許第３５０２２６１号公報
　本発明は、このような従来の技術の課題を考慮してなされたもので、その目的とするところは、真空槽内においてフィルムを搬送しながらフィルム上に均一な膜厚の有機化合物膜を高い成膜速度で形成する技術を提供することにある。
　上記目的を達成するためになされた本発明は、真空槽内において、原反ロールから繰り出されたフィルムを中央ローラと接触しつつ搬送し、当該フィルム上において有機化合物膜を形成する成膜装置であって、前記真空槽内に設けられた成膜室内に配置され、有機化合物の蒸気を放出して前記中央ローラ上のフィルムに吹き付ける蒸気放出部を有する蒸気放出装置と、前記中央ローラ上に形成された有機化合物層に対してエネルギー線を照射して当該有機化合物層を硬化させるエネルギー線射出装置とを有し、前記蒸気放出装置及び前記成膜室が、独立して制御可能な真空排気装置にそれぞれ接続されるとともに、前記蒸気放出装置内の圧力が前記成膜室内の圧力より大きく、かつ、前記蒸気放出装置内の圧力と前記成膜室内の圧力との差が一定になるように真空排気するものである。
　本発明では、所定温度に制御された希ガスの流量を制御して前記蒸気放出装置に供給するように構成されている場合にも効果的である。
　本発明では、前記真空槽内に、前記エネルギー線射出装置が配置される硬化室と、前記硬化室及び前記成膜室に連通されたバッファ室とが設けられ、前記硬化室及び前記バッファ室が、独立して制御可能な真空排気装置にそれぞれ接続されている場合にも効果的である。
　本発明にあっては、蒸気放出装置の蒸気放出部から有機化合物の蒸気を放出して中央ローラ上のフィルムに吹き付ける際に、蒸気放出装置内の圧力が成膜室内の圧力より大きく、かつ、蒸気放出装置内の圧力と成膜室内の圧力との差が一定になるように真空排気することから、中央ローラによって搬送されるフィルム上において膜厚の均一な有機化合物層を形成することができる。
　その結果、本発明によれば、膜厚が均一に形成された有機化合物層に対してエネルギー線を照射して重合させ硬化させることによって、均一な膜厚の高分子有機化合膜を形成することができる。
　本発明において、所定温度に制御された希ガスの流量を制御して蒸気放出装置に供給するように構成されている場合には、容易に蒸気放出装置内の圧力を成膜室内の圧力より大きくすることができるので、蒸気放出装置と成膜室の圧力差を大きくして成膜速度を向上させることができる。
　また、本発明において、真空槽内に、エネルギー線射出装置が配置される硬化室と、硬化室及び成膜室に連通されたバッファ室とが設けられ、硬化室及びバッファ室が、独立して制御可能な真空排気装置にそれぞれ接続されている場合には、蒸気放出装置及び成膜室間のみならず、成膜室、バッファ室、硬化室間において圧力差の大きい差動排気を行うことができるので、各室の圧力差をより大きくして成膜速度を向上させることができる。
　本発明によれば、真空槽内において、中央ローラによって搬送されるフィルム上において、均一な膜厚の有機化合物膜を形成することができる。
（ａ）：本発明に係る成膜装置の実施の形態の内部構成を示す全体図（ｂ）：同成膜装置の要部構成図 （ａ）：同蒸気放出装置の蒸気放出部を示す正面図（ｂ）：同蒸気放出装置の蒸気放出部を示す側面図 （ａ）（ｂ）：フィルム上に有機化合物層を形成する工程を模式的に示す説明図
　以下、本発明の好ましい実施の形態を図面を参照して詳細に説明する。
　図１（ａ）は、本発明に係る成膜装置の実施の形態の内部構成を示す全体図、図１（ｂ）は、同成膜装置の要部構成図である。
　また、図２（ａ）（ｂ）は、同蒸気放出装置の蒸気放出部を示すもので、図２（ａ）は正面図、図２（ｂ）は側面図である。
　図１（ａ）に示すように、本実施の形態の成膜装置１は、真空槽２内においてフィルム１０上に膜を形成するものである。
　真空槽２の内部の中央部分近傍には、フィルム１０と接触して搬送するための円柱形状の中央ローラ３が設けられ、この中央ローラ３の周囲に、フィルム繰出巻取室４、バッファ室５、成膜室６、硬化室７が設けられている。
　本実施の形態のフィルム繰出巻取室４は、中央ローラ３の近傍に設けられた多段に折り曲げた板形状の第１の隔壁１１と、中央ローラ３に対して真空槽２の一方側（ここでは図中下方側）の内壁とで囲まれた空間によって形成されている。
　ここで、第１の隔壁１１は、中央ローラ３の近傍の部分が、中央ローラ３の側面及び両底面に近接するように形成され、これにより第１の隔壁１１と中央ローラ３の側面との間の隙間にフィルム１０が通過できるように構成されている。
　フィルム繰出巻取室４内には、成膜対象物であるフィルム１０の原反ロール４１が配置され、この原反ロール４１から繰り出されたフィルム１０が、中央ローラ３の表面に密着するように方向転換して引き回されて、フィルム繰出巻取室４内に設けられた巻取ローラ４２によって巻き取られるように構成されている。
　また、フィルム繰出巻取室４内には、成膜後のフィルム１０に対して除電を行う除電装置４３が設けられている。この除電装置４３は、成膜後のフィルム１０が静電気により中央ローラ３に貼り付くことを防止するためのものである。
　一方、バッファ室５は、第１の隔壁１１と、中央ローラ３の近傍において第１の隔壁１１と対向するように設けられた多段折曲板形状の第２の隔壁１２と、真空槽２の内壁（ここでは図中左右側の内壁）とで囲まれた空間によって形成されている。
　ここで、第２の隔壁１２は、中央ローラ３の近傍の部分が、中央ローラ３の側面及び両底面に近接するように形成され、これにより第２の隔壁１２と中央ローラ３の側面との間の隙間にフィルム１０が通過できるように構成されている。
　さらにまた、成膜室６は、バッファ室５の内部に設けられた多段に折り曲げた形状の第３の隔壁１３と、真空槽２の一方側（ここでは図中左側）の内壁とで囲まれた空間によって形成されている。
　ここで、第３の隔壁１３は、中央ローラ３の近傍の部分が、中央ローラ３の側面及び両底面に近接するように形成され、これにより第３の隔壁１３と中央ローラ３の側面との間の隙間にフィルム１０が通過できるように構成されている。
　そして、成膜室６内には、後述する蒸気放出装置８の蒸気放出部８２が配置されている。
　一方、硬化室７は、第２の隔壁１２と、中央ローラ３に対して真空槽２の他方側（ここでは図中上方側）の内壁とで囲まれた空間によって形成されている。
　ここで、真空槽２の上部で硬化室７と連通する部分には、中央ローラ３方向にエネルギー線を射出するエネルギー線射出装置９が設けられている。
　上述したフィルム繰出巻取室４、バッファ室５、成膜室６、硬化室７は、独立して制御可能な第１～第４真空排気装置４０、５０、６０、７０にそれぞれ接続され、上述した第１～第３の隔壁１１～１３と中央ローラ３との間の隙間を介して、フィルム繰出巻取室４とバッファ室５、バッファ室５と成膜室６、バッファ室５と硬化室７との間で差動排気ができるように構成されている。
　図１（ｂ）に示すように、本実施の形態の蒸気放出装置８は、液体状の有機化合物モノマー３３を気化する気化部８１を有し、この気化部８１は、成膜室６の第３真空排気装置６０に対して独立して制御可能な第５真空排気装置８０に接続されている。
　本実施の形態の場合、気化部８１には、例えば円筒形状の蒸気放出部８２がベローズを有する接続部８１ａを介して連通接続され、この蒸気放出部８２が真空槽２の成膜室６内に配置されている。
　一方、気化部８１には、気化部８１内の圧力を測定する圧力計２０が設けられ、この圧力計２０は、コンピュータ等を有する制御部１８に対し、測定した圧力情報を送出するように構成されている（図１参照）。
　この制御部１８は、成膜室６内の圧力を測定する成膜圧力計２１に電気的に接続され、成膜圧力計２１において測定された成膜室６内の圧力情報を受け取るように構成されている。
　また、制御部１８は、成膜室６を真空排気する第３真空排気装置６０に電気的に接続され、成膜室６内に設けられた成膜圧力計２１において得られた結果に基づいて成膜室６内の圧力を制御するように構成されている。
　本実施の形態では、気化部８１の筐体内部に例えば媒体循環路（図示せず）が設けられ、この媒体循環路と第１温度調整手段１９との間において所定温度に制御された媒体を循環させるように構成されている。
　また、蒸気放出部８２の筐体内部に例えば媒体循環路（図示せず）が設けられ、この媒体循環路と第２温度調整手段８３との間において所定温度に制御された媒体を循環させるように構成されている。
　一方、気化部８１の外部には、モノマー供給源３０が設けられ、このモノマー供給源３０から液体状の有機化合物モノマー（以下、適宜「有機化合物モノマー」という。）３３を、配管３１及び有機化合物導入部２２を介して気化部８１内に導入するように構成されている。
　本実施の形態のモノマー供給源３０は、容器３２内に収容された液体状の有機化合物モノマー３３内に不活性ガスのような希ガス３４を送り込み、その圧力によって配管３１を介して有機化合物モノマー３３を有機化合物導入部２２に供給するように構成されている。
　本実施の形態の有機化合物導入部２２は、気化部８１の上部に設けられ、液体状の有機化合物モノマー３３を分散させ霧状にして噴霧する分散器２２ａを有している。
　一方、気化部８１内で分散器２２ａの下方には、導入された有機化合物モノマー３３を搬送しつつ気化する気化器２３が設けられている。
　この気化器２３は、例えば平板形状に形成された複数（本実施の形態では四つ）の第１～第４気化部材２４Ａ、２４Ｂ、２４Ｃ、２４Ｄを有している。
　本実施の形態の第１～第４気化部材２４Ａ～２４Ｄは、斜め下方向に並べて配列され、それぞれ一方側に傾斜させることによって、有機化合物モノマー３３を上方から下方のものへ受け渡すように配置構成されている。
　そして、第１～第４気化部材２４Ａ～２４Ｄは、傾斜角度をそれぞれ変更調整できるように構成されている。
　これら第１～第４気化部材２４Ａ～２４Ｄは、それぞれ内部に媒体循環路（図示せず）が設けられ、独立して制御可能な媒体循環方式による第３～第６温度調整手段２６、２７、２８、２９にそれぞれ接続されている。
　本実施の形態では、最上段の第１気化部材２４Ａから下方の第２気化部材２４Ｂに有機化合物モノマー３３を受け渡し、この第２気化部材２４Ｂから下方の第３気化部材２４Ｃに有機化合物モノマー３３を受け渡し、さらに、この第３気化部材２４Ｃから下方の第４気化部材２４Ｄに有機化合物モノマー３３を受け渡す。
　そして、このような構成を有する気化部８１では、有機化合物モノマー３３を搬送及び受け渡す際に有機化合物モノマー３３を加熱して気化させるようになっている。
　一方、気化部８１の外部には、希ガス供給源３５が設けられ、この希ガス供給源３５から送られた不活性ガスのような希ガスをマスフローコントローラ３６を介して気化部８１内に導入するように構成されている。
　本実施の形態の場合、このマスフローコントローラ３６は制御部１８に接続され、圧力計２０及び成膜圧力計２１において得られた結果に基づいて希ガスの導入量を制御するようになっている。
　図１（ｂ）並びに図２（ａ）（ｂ）に示すように、円筒形状に形成された本実施の形態の蒸気放出装置８の蒸気放出部８２は、気化部８１から有機化合物モノマーの蒸気３７が送られるもので、内部の圧力が気化部８１内の圧力と同一となるように構成されている。
　また、蒸気放出部８２は、その長手方向に沿って直線状に形成された放出部８４を有し、この放出部８４に直線スリット状の蒸気放出口８５が設けられている。ここで、蒸気放出部８２は、その回転軸線Ｏ1が中央ローラ３の回転軸線Ｏ2と平行になるように配置されるとともに、蒸気放出口８５が、これら回転軸線Ｏ1，Ｏ2と平行に、中央ローラ３上のフィルム１０に対し近接して対向配置されている。
　また、蒸気放出口８５は、中央ローラ３（フィルム１０）の幅より若干幅狭に形成され、フィルム１０表面に対して幅方向に直線的に有機化合物モノマーの蒸気３７を吹き付けるように構成されている。
　このような構成を有する本実施の形態において、真空槽２内においてフィルム１０上に高分子有機化合物膜を形成する場合には、第５真空排気装置８０を動作させて蒸気放出装置８の気化部８１内の圧力を所定の値になるように真空排気するとともに、第１～第４真空排気装置４０、５０、６０、７０を動作させてフィルム繰出巻取室４、バッファ室５、成膜室６、硬化室７の圧力をそれぞれ所定の値になるように真空排気する。
　この場合、硬化室７の圧力よりバッファ室５の圧力が大きく、かつ、バッファ室５の圧力より成膜室６の圧力が大きくなるように第２～第４真空排気装置５０～７０をそれぞれ動作させて差動排気を行う。
　また、バッファ室５の圧力よりフィルム繰出巻取室４の圧力が大きくなるように第１及び第２真空排気装置４０、５０をそれぞれ動作させて差動排気を行う。
　一方、蒸気放出装置８においては、気化部８１内の第１～第４気化部材２４Ａ～２４Ｄの傾斜角度を所定の角度に設定するとともに、第３～第６温度調整手段２６～２９を動作させて第１～第４気化部材２４Ａ～２４Ｄをそれぞれ所定の温度に温度制御する。
　また、第２温度調整手段８３を動作させて蒸気放出部８２を所定の温度に温度制御する。
　この状態で、希ガス供給源３５からマスフローコントローラ３６を介して所定量の希ガスを気化部８１内に導入するとともに、モノマー供給源３０から配管３１及び有機化合物導入部２２を介して所定量の液体状の有機化合物モノマー３３を気化部８１内に導入する。
　これにより、気化部８１の上部に設けられた分散器２２ａによって霧状の有機化合物モノマー３３が上方から上段の第１気化部材２４Ａに供給される。
　供給された有機化合物モノマー３３は、第１気化部材２４Ａから第２気化部材２４Ｂに受け渡され、第２気化部材２４Ｂから第３気化部材２４Ｃに受け渡され、さらに、第３気化部材２４Ｃから第４気化部材２４Ｄに受け渡され、この搬送及び受け渡しの際に有機化合物モノマー３３が加熱され気化される。
　気化された有機化合物モノマー３３は、蒸気放出部８２に送られて蒸気放出部８２の蒸気放出口８５から噴出され、図３（ａ）に示すように、中央ローラ３に接触して搬送されるフィルム１０に対して有機化合物モノマーの蒸気３７が吹き付けられてフィルム１０上に有機化合物モノマー層３８が形成される。
　本実施の形態においては、有機化合物モノマーの蒸気３７を吹き付ける際に、蒸気放出装置８（気化部８１及び蒸気放出部８２）内の圧力が成膜室６内の圧力より大きく、かつ、蒸気放出装置８内の圧力と成膜室６内の圧力との差が一定になるように真空排気する。
　具体的には、制御部１８からの命令により、成膜圧力計２１において得られた結果に基づいて第３真空排気装置６０を動作させて成膜室６内の圧力を所定の値に制御するとともに、圧力計２０において得られた結果に基づいてマスフローコントローラ３６を動作させて気化部８１に導入する希ガスの導入量を制御して気化部８１の圧力を所定の値に制御する。
　その後、フィルム１０を搬送しつつ、図１（ａ）に示す硬化室７において、エネルギー線射出装置９からエネルギー線９１を射出してフィルム１０上の有機化合物モノマー層３８を硬化させ、高分子有機化合物層３９を形成する（図３（ａ）（ｂ）参照）。
　最後に、フィルム繰出巻取室４内においてフィルム１０に対して除電を行い、巻取ローラ４２によってフィルム１０を巻き取る。
　以上述べた本実施の形態においては、蒸気放出装置８の蒸気放出部８２から有機化合物モノマーの蒸気３７を放出して中央ローラ３上のフィルム１０に吹き付ける際に、蒸気放出装置８内の圧力が成膜室６内の圧力より大きく、かつ、蒸気放出装置８内の圧力と成膜室６内の圧力との差が一定になるように真空排気することから、中央ローラ３によって搬送されるフィルム１０上において膜厚の均一な有機化合物モノマー層３８を形成することができる。
　その結果、本実施の形態によれば、膜厚が均一に形成された有機化合物モノマー層３８に対してエネルギー線９１を照射して重合させ硬化させることによって、均一な膜厚の高分子有機化合物層３９を形成することができる。
　また、本実施の形態では、所定温度に制御された希ガスの流量をマスフローコントローラ３６によって制御して蒸気放出装置８に供給することから、容易に蒸気放出装置８内の圧力を成膜室６内の圧力より大きくすることができ、これにより蒸気放出装置８と成膜室６の圧力差を大きくして成膜速度を向上させることができる。
　さらに、本実施の形態では、真空槽２内に、エネルギー線射出装置９が配置される硬化室７と、硬化室７及び成膜室６と連通されたバッファ室５とが設けられ、硬化室７及びバッファ室５が、独立して制御可能な第４及び第２真空排気装置７０、５０にそれぞれ接続されていることから、蒸気放出装置８及び成膜室６間のみならず、成膜室６、バッファ室５、硬化室７間において圧力差の大きい差動排気を行うことができ、これにより各室の圧力差をより大きくして成膜速度を向上させることができる。
　さらにまた、本実施の形態では、気化器２３の第１～第４気化部材２４Ａ～２４Ｄが、独立して制御可能な媒体循環方式による第３～第６温度調整手段２６～２９にそれぞれ接続されていることから、種々の気化温度の有機化合物モノマー３３に対して最適の条件で気化させることができる。
　さらにまた、本実施の形態では、第１～第４気化部材２４Ａ～２４Ｄの傾斜角度をそれぞれ変更調整できるように構成されていることから、種々の粘度の有機化合物モノマー３３に対して最適の条件で搬送し且つ受け渡して気化させることができる。
　加えて、本実施の形態では、成膜の際に、バッファ室５の圧力よりフィルム繰出巻取室４の圧力が大きくなるように第１及び第２真空排気装置４０、５０を動作させることから、バッファ室５からフィルム繰出巻取室４への有機化合物モノマーの蒸気３７の回り込みを防止することができる。
　なお、本発明は上述した実施の形態に限られず、種々の変更を行うことができる。
　例えば、蒸気放出装置の気化器については、上記実施の形態のものに限られず、低分子の有機化合物を気化できるものであれば、種々のタイプのものを用いることができる。
　ただし、上記実施の形態のものを用いれば、種々の気化温度の有機化合物に対して最適の条件で気化させることができるとともに、種々の粘度の有機化合物に対して最適の条件で搬送し且つ受け渡して気化させることができる。
　また、本発明において膜の原料となる有機化合物の種類は、特に限定されることはなく、種々の有機化合物に適用することができる。
　さらに、成膜対象物であるフィルムの種類、厚さ等についても、特に限定されることはなく、種々のフィルムに適用することができる。
１…成膜装置
２…真空槽
３…中央ローラ
４…フィルム繰出巻取室
５…バッファ室
６…成膜室
７…硬化室
８…蒸気放出装置
１０…フィルム
１８…制御部
１９…第１温度調整手段
２０…圧力計
２１…成膜圧力計
２２…有機化合物導入部
２２ａ…分散器
２３…気化器
２４Ａ、２４Ｂ、２４Ｃ、２４Ｄ…第１～第４気化部材
２６、２７、２８、２９…第３～第６温度調整手段
３０…モノマー供給源
３３…有機化合物モノマー
３５…希ガス供給源
３６…マスフローコントローラ
３７…有機化合物モノマーの蒸気
４０、５０、６０、７０、８０…第１～第５真空排気装置
４１…原反ロール
８１…気化部
８２…蒸気放出部
８５…蒸気放出口
Ｏ1、Ｏ2…回転軸線 

Claims (3)

  1. 　真空槽内において、原反ロールから繰り出されたフィルムを中央ローラと接触しつつ搬送し、当該フィルム上において有機化合物膜を形成する成膜装置であって、
    　前記真空槽内に設けられた成膜室内に配置され、有機化合物の蒸気を放出して前記中央ローラ上のフィルムに吹き付ける蒸気放出部を有する蒸気放出装置と、
    　前記中央ローラ上に形成された有機化合物層に対してエネルギー線を照射して当該有機化合物層を硬化させるエネルギー線射出装置とを有し、
    　前記蒸気放出装置及び前記成膜室が、独立して制御可能な真空排気装置にそれぞれ接続されるとともに、
    　前記蒸気放出装置内の圧力が前記成膜室内の圧力より大きく、かつ、前記蒸気放出装置内の圧力と前記成膜室内の圧力との差が一定になるように真空排気する成膜装置。
  2. 　所定温度に制御された希ガスの流量を制御して前記蒸気放出装置に供給するように構成されている請求項１記載の成膜装置。
  3. 　前記真空槽内に、前記エネルギー線射出装置が配置される硬化室と、前記硬化室及び前記成膜室に連通されたバッファ室とが設けられ、前記硬化室及び前記バッファ室が、独立して制御可能な真空排気装置にそれぞれ接続されている請求項１又は２のいずれか１項記載の成膜装置。 
PCT/JP2013/066261 2012-06-29 2013-06-12 成膜装置 Ceased WO2014002773A1 (ja)

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TW201413015A (zh) 2014-04-01
KR20150008927A (ko) 2015-01-23
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CN104379804B (zh) 2016-03-09
EP2868769A1 (en) 2015-05-06

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