WO2014017871A3 - 반도체 발광소자 - Google Patents

반도체 발광소자 Download PDF

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Publication number
WO2014017871A3
WO2014017871A3 PCT/KR2013/006742 KR2013006742W WO2014017871A3 WO 2014017871 A3 WO2014017871 A3 WO 2014017871A3 KR 2013006742 W KR2013006742 W KR 2013006742W WO 2014017871 A3 WO2014017871 A3 WO 2014017871A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
emitting device
semiconductor light
semiconductor layers
supporting substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2013/006742
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English (en)
French (fr)
Other versions
WO2014017871A2 (ko
Inventor
안상정
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020120081785A external-priority patent/KR20140013690A/ko
Priority claimed from KR1020120081788A external-priority patent/KR101928328B1/ko
Priority claimed from KR1020120098199A external-priority patent/KR20140031641A/ko
Application filed by Individual filed Critical Individual
Priority to US14/414,384 priority Critical patent/US9362446B2/en
Priority to CN201380039741.4A priority patent/CN104508841B/zh
Publication of WO2014017871A2 publication Critical patent/WO2014017871A2/ko
Publication of WO2014017871A3 publication Critical patent/WO2014017871A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

본 개시는 제1 면과 제1 면에 대향하는 제2 면을 가지는 지지 기판(Supporting substrate); 제1 면상에 형성된 적어도 한 개의 반도체 적층체;로서, 의 반도체층을 구비하는, 적어도 한 개의 반도체 적층체; 복수의 반도체층의 제2 반도체층 측과 지지 기판의 제1 면 측을 접합시키는 접합층(Bonded layer); 그리고, 제1 면에 형성되며, 복수의 반도체층 쪽으로 개방되어 있으며, 복수의 반도체층으로 전류 공급을 위해 구비되는 접합층 제거 면(Bonded layer-removed surface);을 포함하는 것을 특징으로 하는 반도체 발광소자에 관한 것이다.
PCT/KR2013/006742 2012-07-26 2013-07-26 반도체 발광소자 Ceased WO2014017871A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US14/414,384 US9362446B2 (en) 2012-07-26 2013-07-26 Semiconductor light-emitting device
CN201380039741.4A CN104508841B (zh) 2012-07-26 2013-07-26 半导体发光器件

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR1020120081785A KR20140013690A (ko) 2012-07-26 2012-07-26 반도체 발광소자
KR1020120081788A KR101928328B1 (ko) 2012-07-26 2012-07-26 반도체 발광소자
KR10-2012-0081788 2012-07-26
KR10-2012-0081785 2012-07-26
KR10-2012-0098199 2012-09-05
KR1020120098199A KR20140031641A (ko) 2012-09-05 2012-09-05 반도체 발광소자

Publications (2)

Publication Number Publication Date
WO2014017871A2 WO2014017871A2 (ko) 2014-01-30
WO2014017871A3 true WO2014017871A3 (ko) 2014-03-20

Family

ID=49997931

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2013/006742 Ceased WO2014017871A2 (ko) 2012-07-26 2013-07-26 반도체 발광소자

Country Status (3)

Country Link
US (1) US9362446B2 (ko)
CN (1) CN104508841B (ko)
WO (1) WO2014017871A2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9299742B2 (en) 2011-08-15 2016-03-29 Micron Technology, Inc. High-voltage solid-state transducers and associated systems and methods
US20150187993A1 (en) * 2012-06-14 2015-07-02 Sang Jeong An Semiconductor light-emitting device and method for manufacturing the same
TWI568026B (zh) * 2014-11-04 2017-01-21 錼創科技股份有限公司 發光裝置
DE102015107526A1 (de) 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und optoelektronisches Modul
US11469138B2 (en) * 2018-05-04 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Via for coupling attached component upper electrode to substrate
TWI785106B (zh) * 2018-08-28 2022-12-01 晶元光電股份有限公司 半導體裝置
JP7780963B2 (ja) * 2022-01-21 2025-12-05 旭化成エレクトロニクス株式会社 赤外線発光装置
CN115881555B (zh) * 2022-12-23 2024-06-14 杰创半导体(苏州)有限公司 半导体器件的制作方法
CN116544323B (zh) * 2023-07-06 2023-09-01 江西兆驰半导体有限公司 一种led芯片的制备方法及led芯片

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001230448A (ja) * 1997-01-31 2001-08-24 Matsushita Electric Ind Co Ltd 発光素子および発光装置ならびにそれらの製造方法
KR20030038072A (ko) * 2001-11-08 2003-05-16 한국전자통신연구원 산화막 전류 구경을 갖는 장파장용 수직 공진 표면 방출레이저 및 그 제조 방법
KR20070079956A (ko) * 2007-07-03 2007-08-08 한국광기술원 칩스케일 패키징 발광소자 및 그의 제조방법
KR20100044726A (ko) * 2008-10-22 2010-04-30 삼성엘이디 주식회사 반도체 발광 소자
US20110180831A1 (en) * 2008-04-06 2011-07-28 Song June O Luminous element

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4368225B2 (ja) * 2004-03-10 2009-11-18 三洋電機株式会社 窒化物系半導体発光素子の製造方法
CN101263610B (zh) * 2005-09-30 2013-03-13 首尔Opto仪器股份有限公司 具有竖直堆叠发光二极管的发光器件
TWI372478B (en) * 2008-01-08 2012-09-11 Epistar Corp Light-emitting device
US8058669B2 (en) * 2008-08-28 2011-11-15 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitting diode integration scheme
TWI414088B (zh) * 2009-12-16 2013-11-01 晶元光電股份有限公司 發光元件及其製造方法
KR20110082863A (ko) 2010-01-12 2011-07-20 삼성엘이디 주식회사 반도체 발광소자용 지지 웨이퍼, 그 제조 방법 및 이를 이용한 수직 구조 반도체 발광소자의 제조 방법
KR20130007538A (ko) * 2010-02-25 2013-01-18 아사히 가라스 가부시키가이샤 발광 소자 탑재용 기판 및 발광 장치
US8901586B2 (en) 2010-07-12 2014-12-02 Samsung Electronics Co., Ltd. Light emitting device and method of manufacturing the same
US8198109B2 (en) * 2010-08-27 2012-06-12 Quarkstar Llc Manufacturing methods for solid state light sheet or strip with LEDs connected in series for general illumination
KR101194844B1 (ko) 2010-11-15 2012-10-25 삼성전자주식회사 발광소자 및 그 제조방법
US8653542B2 (en) * 2011-01-13 2014-02-18 Tsmc Solid State Lighting Ltd. Micro-interconnects for light-emitting diodes
CN102231378B (zh) * 2011-05-25 2013-05-29 映瑞光电科技(上海)有限公司 一种led封装结构及其制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001230448A (ja) * 1997-01-31 2001-08-24 Matsushita Electric Ind Co Ltd 発光素子および発光装置ならびにそれらの製造方法
KR20030038072A (ko) * 2001-11-08 2003-05-16 한국전자통신연구원 산화막 전류 구경을 갖는 장파장용 수직 공진 표면 방출레이저 및 그 제조 방법
KR20070079956A (ko) * 2007-07-03 2007-08-08 한국광기술원 칩스케일 패키징 발광소자 및 그의 제조방법
US20110180831A1 (en) * 2008-04-06 2011-07-28 Song June O Luminous element
KR20100044726A (ko) * 2008-10-22 2010-04-30 삼성엘이디 주식회사 반도체 발광 소자

Also Published As

Publication number Publication date
CN104508841A (zh) 2015-04-08
US9362446B2 (en) 2016-06-07
WO2014017871A2 (ko) 2014-01-30
CN104508841B (zh) 2018-05-22
US20150144870A1 (en) 2015-05-28

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