WO2014086524A3 - Elektroakustischer wandler - Google Patents

Elektroakustischer wandler Download PDF

Info

Publication number
WO2014086524A3
WO2014086524A3 PCT/EP2013/071425 EP2013071425W WO2014086524A3 WO 2014086524 A3 WO2014086524 A3 WO 2014086524A3 EP 2013071425 W EP2013071425 W EP 2013071425W WO 2014086524 A3 WO2014086524 A3 WO 2014086524A3
Authority
WO
WIPO (PCT)
Prior art keywords
electroacoustic transducer
oscillations
excited
structured
electric field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2013/071425
Other languages
English (en)
French (fr)
Other versions
WO2014086524A2 (de
Inventor
Werner Ruile
Philipp Michael JÄGER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
Epcos AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos AG filed Critical Epcos AG
Priority to US14/650,230 priority Critical patent/US9497551B2/en
Priority to JP2015545704A priority patent/JP6382832B2/ja
Priority to CN201380064071.1A priority patent/CN104838588B/zh
Publication of WO2014086524A2 publication Critical patent/WO2014086524A2/de
Publication of WO2014086524A3 publication Critical patent/WO2014086524A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/202—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using longitudinal or thickness displacement combined with bending, shear or torsion displacement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/206—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using only longitudinal or thickness displacement, e.g. d33 or d31 type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/208—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using shear or torsion displacement, e.g. d15 type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/852—Composite materials, e.g. having 1-3 or 2-2 type connectivity
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H2009/241—Bulk-mode MEMS resonators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Signal Processing (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Transducers For Ultrasonic Waves (AREA)

Abstract

Die vorliegende Erfindung betrifft einen elektroakustischen Wandler (1) mit einer piezoelektrischen Schicht (4), die derart strukturiert ist, dass bei einem in einer Raumrichtung angelegten elektrischen Wechselfeld eine Schwingungsmode mit Schwingungen in drei Raumrichtungen angeregt wird.
PCT/EP2013/071425 2012-12-06 2013-10-14 Elektroakustischer wandler Ceased WO2014086524A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US14/650,230 US9497551B2 (en) 2012-12-06 2013-10-14 Electroacoustic transducer
JP2015545704A JP6382832B2 (ja) 2012-12-06 2013-10-14 電子音響変換器
CN201380064071.1A CN104838588B (zh) 2012-12-06 2013-10-14 电声转换器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012111889.2A DE102012111889B9 (de) 2012-12-06 2012-12-06 Elektroakustischer Wandler
DE102012111889.2 2012-12-06

Publications (2)

Publication Number Publication Date
WO2014086524A2 WO2014086524A2 (de) 2014-06-12
WO2014086524A3 true WO2014086524A3 (de) 2014-10-23

Family

ID=49378278

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2013/071425 Ceased WO2014086524A2 (de) 2012-12-06 2013-10-14 Elektroakustischer wandler

Country Status (5)

Country Link
US (1) US9497551B2 (de)
JP (1) JP6382832B2 (de)
CN (1) CN104838588B (de)
DE (1) DE102012111889B9 (de)
WO (1) WO2014086524A2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014111993B4 (de) * 2014-08-21 2017-12-21 Snaptrack, Inc. Mikroakustische Bauelement mit verbesserter Temperaturkompensation
DE102014112372B3 (de) 2014-08-28 2016-02-25 Epcos Ag Filterchip und Verfahren zur Herstellung eines Filterchips
CN107078720B (zh) * 2014-10-06 2021-12-24 株式会社村田制作所 梯型滤波器以及双工器
DE102016100925B4 (de) * 2016-01-20 2018-05-30 Snaptrack, Inc. Filterschaltung
JP6265578B1 (ja) * 2016-09-07 2018-01-24 株式会社アルバック デバイス及びデバイスの製造方法並びにアレイ型の超音波プローブの製造方法
WO2018056908A1 (en) * 2016-09-26 2018-03-29 Agency For Science, Technology And Research Piezoelectric resonator and method of forming the same
CN107026627A (zh) * 2016-12-12 2017-08-08 佛山市艾佛光通科技有限公司 垂直阵列纳米柱薄膜体声波谐振器及其制备方法和滤波器
JP2019165307A (ja) * 2018-03-19 2019-09-26 京セラ株式会社 超音波センサ
WO2020029153A1 (zh) * 2018-08-09 2020-02-13 天津大学 基于兰姆波谐振器的粒子聚集器及其操作方法
CN110113026B (zh) * 2019-05-22 2021-04-02 武汉敏声新技术有限公司 一种二维兰姆波谐振器
KR20220034894A (ko) 2019-07-19 2022-03-18 에바텍 아크티엔게젤샤프트 압전 코팅 및 증착 공정
CN110995194B (zh) * 2019-12-30 2021-12-17 武汉敏声新技术有限公司 一种二维高性能谐振器
KR102763470B1 (ko) 2019-12-16 2025-02-05 엘지디스플레이 주식회사 표시장치
CN112995863A (zh) * 2021-03-15 2021-06-18 东莞市瑞勤电子有限公司 平面弯曲发声型扬声器、mems微扬声器和制作方法
US12404167B2 (en) * 2021-09-28 2025-09-02 Skyworks Global Pte. Ltd. Piezoelectric MEMS device with thermal compensation from different material thicknesses
CN114301412B (zh) * 2021-12-29 2024-04-30 苏州达波新材科技有限公司 具有改良衬底结构的兰姆波声波器件及其制作方法

Citations (3)

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Publication number Priority date Publication date Assignee Title
US20070252485A1 (en) * 2005-12-28 2007-11-01 Takashi Kawakubo Thin-film piezoelectric resonator and filter circuit
US20120007475A1 (en) * 2008-12-17 2012-01-12 Epcos Ag Construction element that operates with acoustic waves, and method for the manufacture thereof
WO2012064283A1 (en) * 2010-11-08 2012-05-18 Agency For Science, Technology And Research Cross-reference to related application

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US3423543A (en) * 1965-06-24 1969-01-21 Harry W Kompanek Loudspeaker with piezoelectric wafer driving elements
US4843275A (en) * 1988-01-19 1989-06-27 Pennwalt Corporation Air buoyant piezoelectric polymeric film microphone
JP3288815B2 (ja) * 1993-06-30 2002-06-04 株式会社東芝 ２次元アレイ超音波プローブ
JPH07327297A (ja) * 1994-05-31 1995-12-12 Hitachi Metals Ltd 圧電スピーカ
US5684884A (en) * 1994-05-31 1997-11-04 Hitachi Metals, Ltd. Piezoelectric loudspeaker and a method for manufacturing the same
JP3428803B2 (ja) 1996-03-06 2003-07-22 松下電器産業株式会社 加速度センサ及びその製造方法
US5684883A (en) 1996-11-26 1997-11-04 E Lead Electronic Co., Ltd. Device for receiving earphone/microphone wire of holdfree hand set
JP2004088056A (ja) 2002-07-02 2004-03-18 Sumitomo Electric Ind Ltd 圧電振動子とその実装方法、実装デバイス、それを用いた超音波プローブ、およびそれを用いた３次元超音波診断装置
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US20070252485A1 (en) * 2005-12-28 2007-11-01 Takashi Kawakubo Thin-film piezoelectric resonator and filter circuit
US20120007475A1 (en) * 2008-12-17 2012-01-12 Epcos Ag Construction element that operates with acoustic waves, and method for the manufacture thereof
WO2012064283A1 (en) * 2010-11-08 2012-05-18 Agency For Science, Technology And Research Cross-reference to related application

Non-Patent Citations (2)

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LYNN KHINE ET AL: "Piezoelectric ALN MEMS resonators with high coupling coefficient", 2011 16TH INTERNATIONAL SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS CONFERENCE (TRANSDUCERS 2011) : BEIJING, CHINA, 5 - 9 JUNE 2011, IEEE, PISCATAWAY, NJ, 5 June 2011 (2011-06-05), pages 526 - 529, XP031910981, ISBN: 978-1-4577-0157-3, DOI: 10.1109/TRANSDUCERS.2011.5969674 *
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Also Published As

Publication number Publication date
JP2016506130A (ja) 2016-02-25
US9497551B2 (en) 2016-11-15
DE102012111889B3 (de) 2014-06-05
CN104838588A (zh) 2015-08-12
JP6382832B2 (ja) 2018-08-29
DE102012111889B9 (de) 2014-09-04
US20150312681A1 (en) 2015-10-29
CN104838588B (zh) 2017-11-17
WO2014086524A2 (de) 2014-06-12

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