WO2014173934A1 - Traitement post-synthèse du diamant et matériaux super durs associés - Google Patents

Traitement post-synthèse du diamant et matériaux super durs associés Download PDF

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Publication number
WO2014173934A1
WO2014173934A1 PCT/EP2014/058205 EP2014058205W WO2014173934A1 WO 2014173934 A1 WO2014173934 A1 WO 2014173934A1 EP 2014058205 W EP2014058205 W EP 2014058205W WO 2014173934 A1 WO2014173934 A1 WO 2014173934A1
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Prior art keywords
super
processing wheel
hard material
material product
processing
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English (en)
Inventor
Mark Robin Mcclymont
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Element Six Technologies Ltd
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Element Six Technologies Ltd
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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/12Lapping plates for working plane surfaces
    • B24B37/16Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

Definitions

  • the present invention relates to post-synthesis processing of diamond and related super-hard materials.
  • the present invention relates to optimized lapping processes for diamond and related super-hard materials.
  • super-hard materials are defined as those materials having a Vickers hardness of no less than 2000 kg/mm 2 .
  • These materials include a range of diamond materials, cubic boron nitride materials (cBN), sapphire, and composites comprising the aforementioned materials.
  • diamond materials include chemical vapour deposited (CVD) single crystal and polycrystalline synthetic diamond materials of a variety of grades, high pressure high temperature (HPHT) synthetic diamond materials of a variety of grades, natural diamond material, and diamond composite materials such as polycrystalline diamond which includes a metal binder phase (PCD) or silicon cemented diamond (ScD) which includes a silicon/silicon carbide binder phase.
  • CVD chemical vapour deposited
  • HPHT high pressure high temperature
  • PCD metal binder phase
  • ScD silicon cemented diamond
  • Certain processing methods have operational parameters which can be altered so as to move from a regime in which no significant processing of a super-hard material is achieved into a regime in which processing is achieved but with associated cracking and damage or failure of the super-hard material.
  • the ability to operate within a suitable window of parameter space in which processing can be achieved without cracking and damage or failure of the super-hard material will depend on the processing technique, the size of any transitional operating window for such a technique, and the level of operation parameter control which is possible to maintain processing within the window of parameter space in which processing can be achieved without cracking and damage or failure of the super-hard material.
  • Post synthesis processing may comprise one or more of the following basic processes: surface processing to remove material from the surface of the as-grown super-hard material in order to increase surface flatness, decrease surface roughness, remove surface defects, and/or attain a target thickness for the super-hard material; surface processing to achieve a fine surface finish where minimal material is removed from the super-hard product, i.e. polishing; and cutting of the super-hard material into target shapes and sizes for particular product application.
  • lapping The latter three-body approach to surface processing is known as lapping and it is this approach which is conventionally used to remove macroscopic quantities of surface material from super-hard materials.
  • Three-body lapping as opposed to a two-body surface processing technique, is preferred for removing macroscopic quantities of surface material from super- hard materials as it has been found that lapping is more efficient at removing surface material from a super-hard material without imparting a large degree of stress or thermal shock to the material which would cause macroscopic fracturing of the material due to its brittle nature and low toughness.
  • a two-body processing technique may be utilized.
  • polishing is used to remove material from the surface of an as-grown super-hard material in order to increase surface flatness, decrease surface roughness, remove surface defects, and/or attain a target thickness for the super-hard material.
  • the super-hard material is polished and this may be performed using a two-body surface processing technique in which abrasive material is fixed in a polishing wheel such as via resin bonding. Polishing may also be achieved using an iron or steel wheel which is diamond impregnated and this is known as scaife polishing.
  • scaife polishing generally utilizes free diamond abrasive particles these are of a small size relative to pores within the iron or steel wheel and are thus embedded/fixed into the wheel thus effecting a two-body processing as opposed to a true three body lapping process.
  • the present invention is primarily concerned with lapping super-hard materials using relatively coarse diamond powders or grits (or other super-hard powders or grits) to remove material from the surface of the as-grown super-hard material in order to increase surface flatness, decrease surface roughness, remove surface defects, and/or attain a target thickness for the super-hard material.
  • Lapping of super-hard materials is known in the art. The type of abrasive which should be utilized will be dependent on the type of material which is to be lapped. Obviously, when lapping super-hard materials a super-hard abrasive will be required. Accordingly, for lapping of diamond materials a diamond abrasive is utilized.
  • diamond lapping pastes and slurries are widely available comprising a diamond powder or grit disposed within a carrier fluid.
  • Diamond lapping slurries may have a variety of different concentrations of diamond powder/grit and varying particle sizes of diamond powder/grit.
  • lapping machinery for performing the lapping process is also widely commercially available (e.g. from KemetTM, LogitechTM, and Peter WoltersTM).
  • a review article summarizing various surface polishing techniques for use on chemical vapour deposited (CVD) diamond films and substrates is provided in Diamond and Related Materials 8 (1999) 1198-1213.
  • This review article includes a description of mechanical lapping of diamond films using coarse diamond powders greater than 1.0 ⁇ in size (i.e. diamond grit) disposed in a binder fluid such as olive oil. It is described that this type of mechanical processing removes diamond material via a micro-chipping or micro-cleavage mechanism. It is further described that after lapping using coarse diamond abrasive particles finer diamond powers can be used for final polishing.
  • WO2009/059384 also discloses a lapping method for processing diamond material although it is not immediately clear how the described and claimed method differs from standard lapping of diamond material as summarized in the aforementioned review article.
  • WO2009/059384 seems to suggest that previous methods have involved the diamond abrasive being mechanically immobilised in pores of a rotating processing wheel and that their method is distinguished in that the diamond abrasive particles are free to roll over the surface of the processing wheel and the diamond being processed.
  • the Handbook of Lapping and Polishing (edited by loan D. Mannescu, Eckhart Uhlmann, & Toshiro K.
  • Such a coarse lapping process can be performed to remove material from the surface of an as-grown super-hard material in order to increase surface flatness, decrease surface roughness, remove surface defects, and/or attain a target thickness for the super-hard material. Subsequently, finer abrasive powders can be used for final polishing which are then more prone to be mechanically immobilized in pores of a processing wheel thus providing more of a microcutting processing mechanism.
  • a method of lapping a super-hard material product having a Vickers hardness of no less than 2000 kg/mm 2 comprising: mounting the super-hard material product with a surface of the super-hard material product in contact with a surface of a processing wheel with an interface region disposed between the surface of the super-hard product and the surface of the processing wheel; loading the super-hard material product such that the super-hard material product is pressed against the surface of the processing wheel with a loading force; rotating the processing wheel; and feeding an abrasive slurry onto the surface of the processing wheel, the abrasive slurry comprising super-hard abrasive grit particles disposed in a carrier fluid, wherein the super-hard abrasive grit particles of the abrasive slurry have a particle size of at least 1 ⁇ and roll between the surface of the processing wheel and the surface of the super-hard material product within the interface region in order to cause surface micro- cracking
  • a lapping machine configured for processing a super-hard material product having a Vickers hardness of no less than 2000 kg/mm 2
  • the lapping machine comprising: a rotatable processing wheel; and a mounting part configured to mount the super-hard material product with a surface thereof in contact with a surface of the processing wheel with an interface region disposed between the surface of the super- hard product and the surface of the processing wheel, the mounting part being further configured to press the super-hard material product against the surface of the processing wheel with a loading force
  • the surface of the processing wheel has one or more feed ports disposed therein configured such that in use an abrasive slurry is fed through the feed ports onto the surface of the processing wheel, at least a portion of the abrasive slurry being fed directly from the one or more feed ports into the interface region between the surface of the processing wheel and the super-hard material product being processed.
  • Figure 1 shows a cross-sectional view of a lapping configuration not according to the present invention
  • Figure 2 shows a plan view of a lapping configuration not according to the present invention
  • Figure 3 shows a side view of a constraining ring used to mount a super-hard material product on a processing wheel as illustrated in Figures 1 and 2;
  • Figure 4 shows a cross-sectional view of a lapping configuration according to the present invention
  • Figure 5 shows a plan view of a lapping configuration according to the present invention.
  • Figure 6 shows a cross-sectional view of a carrier substrate with a super-hard material product mounted thereto for processing.
  • FIGS 1 to 3 illustrate a lapping apparatus which is not according to the present invention.
  • the apparatus comprises a rotatable processing wheel 2 on which a super-hard material product to be processed is mounted.
  • the mounting configuration comprises a carrier substrate 4 to which the super-hard material 6 is adhered.
  • the carrier substrate 4 on which the super-hard material 6 is adhered is arranged such that a surface of the super-hard material is in contact with a surface of the processing wheel 2 with an interface region disposed between the surface of the super-hard material 6 and the surface of the processing wheel 2.
  • a weight 8 is provided on the carrier substrate 4 such that the super-hard material 6 is pressed against the surface of the processing wheel 2 with a suitable loading force.
  • the carrier substrate 4 and super-hard material product 6 is mounted on the processing wheel within a constraining ring 10 which constrains a location of the super-hard material product 6 over the processing wheel 2.
  • the constraining ring 10 comprises a number of slots 11 for allowing the passage of abrasive fluid therethrough as illustrated in Figure 3.
  • the constraining ring 10 has an internal diameter which is larger than the diameter of the super- hard material product 6 and carrier substrate 4. Furthermore, both the constraining ring 10 and the super-hard material product 6 are mounted so as to rotate on the surface of the processing wheel 2 driven by rotation of the processing wheel. In the illustrated configuration the constraining ring 10 is rotatable mounted on the processing wheel 2 via constraining arm 12.
  • an abrasive slurry comprising super-hard abrasive particles within a carrier fluid is dripped onto the surface of the processing wheel 2 from above.
  • the abrasive slurry 14 is housed in a slurry container 16 and a tube 18 runs from the slurry container 16 to a position above the processing wheel 2 for dripping abrasive slurry 14 onto the processing wheel 2.
  • a pump such as a peristaltic pump, may be provided to control the drip rate of abrasive slurry onto the processing wheel 2.
  • the abrasive slurry is dripped onto the processing wheel 2 near a central region thereof and the abrasive slurry moves radial outwards across the processing wheel 2 during rotation of the processing wheel in use.
  • the super-hard abrasive particles may be relatively large in size, e.g. having a particle size of greater than 1 ⁇ . These abrasive particle are larger than pores within the surface of the processing wheel 2 and thus roll between the surface of the processing wheel 2 and the surface of the super-hard material product 6 within the interface region in order to cause surface micro-cracking of the super-hard material product 6 and removal of material from the surface of the super-hard material product 6.
  • Figures 4 to 6 illustrate a lapping apparatus re-configured according to the present invention.
  • the apparatus shares many common features with that illustrated in Figures 1 to 3 and like reference numerals have been used for like parts to highlight common features.
  • the apparatus comprises a rotatable processing wheel 2 on which a super-hard material product to be processed is mounted.
  • the mounting configuration may comprise a carrier substrate 4 mounted to the super-hard material 6 such that a loading force is applied to the super-hard material 6 via the carrier substrate 4.
  • the super-hard material 6 may be bonded to the carrier substrate 4.
  • the super-hard material may be retained in a free-standing configuration which is not bonded to a carrier substrate.
  • the super-hard material 6 is adhered to a carrier substrate 4 and arranged such that a surface of the super-hard material is in contact with a surface of the processing wheel 2 with an interface region disposed between the surface of the super-hard material 6 and the surface of the processing wheel 2.
  • a weight 8 is provided on the carrier substrate 4 such that the super-hard material 6 is pressed against the surface of the processing wheel 2 with a suitable loading force.
  • a pneumatic arrangement can be utilized to apply the loading force in place of the weight 8.
  • the carrier substrate 4 (if present) and the super- hard material product 6 can be mounted on the processing wheel within a constraining ring 10 which constrains a location of the super-hard material product 6 over the processing wheel 2.
  • the constraining ring 10 may comprise a number of slots for allowing the passage of abrasive fluid therethrough as previously illustrated in Figure 3 although it is possible to utilize a constraining ring which does not comprise slots.
  • the constraining ring 10 has an internal diameter which is larger than the diameter of the super-hard material product 6 and carrier substrate 4. Furthermore, both the constraining ring 10 and the super-hard material product 6 are mounted so as to rotate on the surface of the processing wheel 2 driven by rotation of the processing wheel.
  • the constraining ring 10 is rotatable mounted on the processing wheel 2 via constraining arm 12.
  • the constraining ring 10 and/or the super-hard material product 6 are rotatably driven independently of the processing wheel 2 and this can be desirable to provide a controlled rotation of the constraining ring 10 and/or the super-hard material product 6 relative to the processing wheel 2.
  • the constraining arm 12 may comprise driven wheels for rotating the constraining ring 10 and/or the super-hard material product 6.
  • a rotating force may be applied from directly above the super-hard material product 6, e.g. via an upper surface of the super-hard material product 6, the carrier substrate 4, the weight 8, and/or via a pneumatic loading configuration if present.
  • the apparatus of Figures 4 to 6 is configured to provide an under-feed arrangement for the abrasive slurry.
  • abrasive slurry is fed upwards through a rotational post 20 as illustrated by arrow 22.
  • the processing plate 2 is adapted to provide a plurality of feed ports 24 disposed in the surface thereof such that in use an abrasive slurry is fed through the feed ports 24 onto the surface of the processing wheel from underneath the processing wheel as illustrated by arrows 26.
  • the abrasive particles then move radial outwards from the feed ports 24 across the surface of the processing wheel 2 and roll through the interface region between the super-hard material product 6 and the processing wheel 2 in order to cause surface micro-cracking of the super-hard material product and removal of material from the surface of the super-hard material product.
  • the plurality of feed ports 24 can be radially distributed across the surface of the processing wheel such that at least a portion of the abrasive slurry is fed directly from the feed ports into the interface region between the surface of the processing wheel and the surface of the super- hard material product being processed.
  • the present inventors have found that higher rates of material processing can be achieved in a much more controllable manner using a lapping configuration in which the surface of the processing wheel has one or more feed ports disposed therein and the abrasive slurry is fed through the feed ports during processing of the super-hard material product onto the surface of the processing wheel from underneath the processing wheel rather than dripped onto the surface of the processing wheel from above as is done in a more standard lapping configuration.
  • a better surface finish is also achieved, especially for large poly crystalline CVD diamond wafers when compared with a top feed approach. While not being bound by theory, it is believed that the under-feed configuration is advantage over the top-feed configuration for the following reasons.
  • the modified lapping process it is also possible using the modified lapping process to achieve more uniform processing across a large surface of a super-hard material such as a polycrystalline CVD diamond wafer.
  • standard lapping techniques involve dripping a suspension of diamond grit onto the lapping wheel from above.
  • using such a technique requires grit to move into a peripheral region of the interface between the lapping wheel and a polycrystalline CVD diamond wafer and then propagate across the interface region in order to process the surface of the polycrystalline CVD diamond wafer.
  • the grit particles are broken down as they hit the peripheral region of the wafer and during propagation under the wafer. This can result in differential processing of peripheral and central regions of the wafer with central regions being processed by smaller particles of grit than peripheral regions.
  • This problem is particular to processing of super-hard materials, such as diamond wafers, as other materials do not cause the diamond grit to be broken down into smaller particles.
  • the lapping apparatus has been modified to feed the suspension of diamond grit from an underside of the lapping wheel through holes in the lapping wheel at locations which result in the grit being fed directly into the interface region between the wafer and the lapping wheel. As such, using this arrangement it is possible to avoid differential processing of peripheral and central regions of the wafer.
  • abrasive slurry is fed onto the surface of the processing wheel though one or more feed ports from underneath the processing wheel. Furthermore, the abrasive slurry is preferably fed onto the surface of the processing wheel though the one or more feed ports in a continuous stream.
  • the lapping apparatus may further comprise a pump configured to feed abrasive slurry though the one or more feed ports in a continuous stream and the pump may be configured to vary a rate of flow of the abrasive slurry though the one or more feed ports in the processing wheel.
  • the processing wheel may also comprise one or more grooves or slots disposed in the working surface thereof, e.g. radially disposed slots, concentrically disposed grooves, or spiral grooves.
  • Such slots and grooves can aid in controlling the movement of abrasive slurry across the processing wheel and/or removal of abrasive slurry from the surface of the processing wheel.
  • the one or more feed ports disposed in the processing wheel may be configured to inject abrasive slurry into one or more slots or grooves on the surface of the processing wheel.
  • the processing wheel may be planar without any such grooves. While slots or grooves are known to increase lapping rates in certain applications, the presence of such slots and grooves can make the re-conditioning of such processing wheels more problematic.
  • the entire apparatus could, in principle, be inverted relative to the Earth.
  • the super-hard material product would be mounted against a lower surface of the processing wheel and abrasive slurry would be fed through feed ports in the processing wheel from above the processing wheel to the lower surface with at least a portion of the abrasive slurry being fed directly from the one or more feed ports into the interface region between the surface of the processing wheel and the super-hard material product being processed.
  • the lapping process as described herein is sensitive to the rotation speed of the processing wheel and that the rotation speed of the processing wheel may be selected to optimize processing rates while retaining a good surface finish. It has been found that the rotation speed of the processing wheel may advantageously be selected to be in a range 0.2 ms "1 to 7.5 ms "1 with certain embodiments optionally using a rotation speed in a range 1.5 ms "1 to 5.5 ms "1 . For example, for a 350 mm diameter processing wheel this would equate to a rotational speed of about 10 rpm (revolutions per minute) to about 400 rpm with certain embodiments optionally using a rotation speed of about 80 rpm to 300 rpm. That said, for certain applications it has been found that higher rotational speeds can be utilized (e.g. up to 1000 rpm).
  • the lapping process as described herein is sensitive to the loading force which presses the super-hard material product against the surface of the processing wheel and that the loading force may be selected to optimize processing rates while retaining a good surface finish. It has been found that the loading per unit area of the super-hard material product which presses the super-hard material product against the surface of the processing wheel may advantageously be selected to be in a range 0.05 g/mm 2 to 1.5 g/mm 2 with certain embodiments optionally using a loading in a range 0.1 g/mm 2 to 0.6 g/mm 2 .
  • control of the super-hard material product relative to the surface of the processing wheel may be achieved in two different ways: (i) controlling a distance between the super-hard material product and the surface of the processing wheel; or (ii) controlling the applied force as described above. Either of these methods of control could be utilized in combination with the underfeed configuration as described herein.
  • the lapping process as described herein is sensitive to the particle size of the super-hard abrasive grit and that the particle size of the abrasive may be selected to optimize processing rates while retaining a good surface finish. It has been found that the particle size of the super-hard abrasive grit may advantageously be selected to be in a range 5 ⁇ to 100 ⁇ with certain embodiments optionally using an abrasive particle size in a range 10 ⁇ to 65 ⁇ . It has been found that surprisingly good surface finishes with relatively low surface roughness can be achieved when lapping with relatively coarse grit.
  • Different grades of abrasives grit may be used either individually or sequentially to achieved particular surfaces finishes. For example, a coarse grit having an average particle size of approximately 50 ⁇ to 60 ⁇ , an intermediate grit having an average particle size of approximately 35 ⁇ to 45 ⁇ , and a fine grit having an average particle size of approximately 20 ⁇ to 30 ⁇ . Finer grits are more expensive and should only generally be used when a very high degree of flatness and smoothness are required. As previously indicated, it has been found that a low roughness finish can be achieved for diamond material using relatively coarse grits. For example, using a grit size of 20 to 25 ⁇ it is possible to achieve a surface roughness of better than 150 nm R a .
  • the processing wheel should be relatively non-porous such that the super-hard abrasive grit particles do not become embedded or impregnated into the surface of the lapping wheel as, for example, in a 2-body polishing technique.
  • the processing wheel should comprise a relatively non-porous surface, e.g.
  • the processing wheel should be made of a relatively hard, relatively tough material to allow the rolling mechanism and also achieve relatively long lifetimes in such a process.
  • lapping wheels are usually formed of a metallic material such as a steel or iron material.
  • the lapping process as described herein is sensitive to the concentration of super-hard abrasive grit particles within the abrasive slurry and that the concentration of super-hard abrasive grit particles within the abrasive slurry may be selected to optimize processing rates while retaining a good surface finish. It has been found that the concentration of super-hard abrasive grit particles within the abrasive slurry may advantageously be selected to be in a range 50 to 150 carats per litre (10 grams/litre to 30 grams/litre) for cost effective processing.
  • the lapping process as described herein is sensitive to the rate at which the abrasive slurry is fed onto the surface of the processing wheel and that the feed rate may be selected to optimize processing rates while retaining a good surface finish. It has been found that the feed rate may advantageously be selected to be in a range 0.1 litres/hour to 2 litres/hour with certain embodiments optionally using a feed rate in a range 0.2 litres/hour to 0.7 litres/hour. Furthermore, typically if the rate of grit supplied to the lapping wheel is doubled then the weight on the wafer being processed should also be doubled such that the load per grit particle remains reasonably constant.
  • a number of possible carrier fluids may be utilized for the abrasive grit particles.
  • the carrier fluid should have a viscosity which is sufficient to suspend the abrasive grit particles during transport through the one or more feed ports to the surface of the processing wheel.
  • the precise requirements for the carrier fluid will also depend on flow rate, grit size, suspension time, and grit concentration. Glycerine based carrier fluids may be utilized but even water based carrier fluids with various additives have been found to be suitable.
  • the processing parameters of rotation speed, loading force, grit size, grit concentration, and slurry feed rate are inter-related and preferably a combination of the aforementioned parameters is utilized to achieve the best lapping of super-hard products.
  • the present inventors have also developed a simple and effective mounting configuration for ensuring that highly flat surface finishes can be achieved.
  • an ultra-fiat carrier substrate e.g. one which has a surface flatness of better than 20 ⁇ , better than 10 ⁇ , better than 5 ⁇ , or better than 1 ⁇ .
  • a very low viscosity adhesive to mount the super-hard material product to the carrier substrate. Use of a low viscosity adhesive avoids the adhesive drying with a non-uniform flatness which introduces non-uniformities in the reference surface to which the super-hard material product is adhered.
  • Such non-uniformities can result in non-uniformities in the flatness of the super- hard material being processed. That said, while low viscosity adhesives have been found to be useful for mounting super-hard material products for processing, another alternative is to leave the super-hard material product in an un-bonded state.
  • the mounting configuration comprises a carrier plate 30 having an ultra-fiat surface.
  • the carrier plate 30 may be formed from a number of different materials including invar, silicon carbide, silicon cemented diamond, quartz, or borosilicate glass.
  • the carrier plate 30 should be made of a material which has a low thermal expansion coefficient and which is capable of being processed to a high degree of flatness.
  • the carrier substrate may be cylindrical in shape and may comprise an o-ring 32 disposed around a peripheral surface thereof. The o-ring 32 is advantageous to protect the carrier in use where it abuts against a constraining ring as previously described.
  • a super-hard material product plate 34 is mounted to the ultra-flat surface of the carrier plate 30, e.g. via a low viscosity adhesive 36. While in Figure 6 the super-hard material product plate 34 has a diameter substantially equal to that of the carrier plate 30, in practice the diameter of the super-hard material product plate 34 may often be smaller than that of the carrier plate 30.
  • One mounting technique involves pressing a wafer of super- hard material onto a carrier substrate (nucleation face down as this provides the smoothest, flattest reference face when compared with the growth face which is rough and comprises larger particles) and beading glue around the edge of the wafer.
  • the glue is drawn into the interface between the wafer and the carrier substrate around a peripheral region by capillary action and sets to adhere the wafer to the carrier substrate. If the wafer or the substrate is not sufficiently flat then glue may be drawn into a more central region of the interface which is not desirable as flatness is compromised. What is desired is a very small volume of glue within the interface region only around a peripheral region.
  • the glue must be a low viscosity adhesive in order to be drawn into the interface and set in the required manner.
  • the glue must also be capable of withstanding the temperatures generated during lapping and polishing in order to retain adhesion during processing. After processing one surface, the substrate-wafer composite is heated to soften the glue and release the wafer which is then turned over and re-adhered to the carrier substrate for processing the nucleation face of the wafer.
  • the lapping process as described herein may also be utilized for non-planar super-hard material products.
  • the working surface of the processing wheel may be curved and the carrier plate may also be curved to provide a suitable mounting configuration and processing surface for a non-planar super-hard material product such a dome or lens.
  • Embodiments of the present invention may be applied to a range of super- hard materials including a range of diamond materials, cubic boron nitride materials (cBN), sapphire, and composites comprising the aforementioned materials.
  • diamond materials include chemical vapour deposited (CVD) single crystal and polycrystalline synthetic diamond materials of a variety of grades, high pressure high temperature (HPHT) synthetic diamond materials of a variety of grades, natural diamond material, and diamond composite materials such as polycrystalline diamond which includes a metal binder phase (PCD) or silicon cemented diamond (ScD) which includes a silicon/silicon carbide binder phase.
  • CVD chemical vapour deposited
  • HPHT high pressure high temperature
  • PCD metal binder phase
  • ScD silicon cemented diamond

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  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne un procédé de rodage d'un produit en matériau super dur possédant une dureté de Vickers supérieure ou égale à 2 000 kg/mm2. Le procédé comprend les étapes consistant à : monter le produit en matériau super dur, une surface du produit en matériau super dur étant en contact avec une surface d'une roue de traitement possédant une région d'interface disposée entre la surface du produit super dur et la surface de la roue de traitement; charger le produit en matériau super dur de sorte que le produit en matériau super dur soit appuyé contre la surface de la roue de traitement avec une force de chargement; faire tourner la roue de traitement; et introduire une boue abrasive sur la surface de la roue de traitement, la boue abrasive comprenant des particules de grenaille abrasives super dures disposées dans un liquide porteur, les particules de grenaille abrasives super dures de la boue abrasive possédant une granulométrie d'au moins 1 µm et un rouleau entre la surface de la roue de traitement et la surface du produit en matériau super dur à l'intérieur de la région d'interface afin d'entraîner une microcraquelure de la surface du produit en matériau super dur et l'élimination de matériau de surface du produit en matériau super dur, et la surface de la roue de traitement possédant un ou plusieurs orifices d'alimentation disposés en son sein et au moins une partie de la boue abrasive étant directement introduite depuis le ou les orifices d'alimentation dans la région d'interface entre la surface de la roue de traitement et le produit en matériau super dur en cours de traitement.
PCT/EP2014/058205 2013-04-25 2014-04-23 Traitement post-synthèse du diamant et matériaux super durs associés Ceased WO2014173934A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB201307480A GB201307480D0 (en) 2013-04-25 2013-04-25 Post-synthesis processing of diamond and related super-hard materials
GB1307480.2 2013-04-25

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WO2014173934A1 true WO2014173934A1 (fr) 2014-10-30

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11078380B2 (en) 2017-07-10 2021-08-03 Entegris, Inc. Hard abrasive particle-free polishing of hard materials

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6056851A (en) * 1996-06-24 2000-05-02 Taiwan Semiconductor Manufacturing Company Slurry supply system for chemical mechanical polishing
US20020187735A1 (en) * 2001-06-06 2002-12-12 Osamu Nabeya Polishing apparatus
US20030092363A1 (en) * 2001-11-15 2003-05-15 Thomas Laursen Method and apparatus for controlling slurry distribution
US20080090503A1 (en) * 2004-07-01 2008-04-17 Samsung Electronics Co., Ltd. Polishing pad and chemical mechanical polishing apparatus comprising the same
WO2009059384A1 (fr) * 2007-11-05 2009-05-14 Wetenschappelijk En Technisch Onderzoekscentrum Voor Diamant, Inrichting Erkend Bij Toepassing Van De Besluitwet Van 30 Januari 1947 Procédé et dispositif de traitement mécanique de diamant

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5876271A (en) * 1993-08-06 1999-03-02 Intel Corporation Slurry injection and recovery method and apparatus for chemical-mechanical polishing process
US6254456B1 (en) * 1997-09-26 2001-07-03 Lsi Logic Corporation Modifying contact areas of a polishing pad to promote uniform removal rates
JP2870537B1 (ja) * 1998-02-26 1999-03-17 日本電気株式会社 研磨装置及び該装置を用いる半導体装置の製造方法
US8002611B2 (en) * 2006-12-27 2011-08-23 Texas Instruments Incorporated Chemical mechanical polishing pad having improved groove pattern

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6056851A (en) * 1996-06-24 2000-05-02 Taiwan Semiconductor Manufacturing Company Slurry supply system for chemical mechanical polishing
US20020187735A1 (en) * 2001-06-06 2002-12-12 Osamu Nabeya Polishing apparatus
US20030092363A1 (en) * 2001-11-15 2003-05-15 Thomas Laursen Method and apparatus for controlling slurry distribution
US20080090503A1 (en) * 2004-07-01 2008-04-17 Samsung Electronics Co., Ltd. Polishing pad and chemical mechanical polishing apparatus comprising the same
WO2009059384A1 (fr) * 2007-11-05 2009-05-14 Wetenschappelijk En Technisch Onderzoekscentrum Voor Diamant, Inrichting Erkend Bij Toepassing Van De Besluitwet Van 30 Januari 1947 Procédé et dispositif de traitement mécanique de diamant

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MALSHE A P ET AL: "A review of techniques for polishing and planarizing chemically vapor-deposited (CVD) diamond films and substrates", DIAMOND AND RELATED MATERIALS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 8, no. 7, 1 July 1999 (1999-07-01), pages 1198 - 1213, XP004253917, ISSN: 0925-9635, DOI: 10.1016/S0925-9635(99)00088-6 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11078380B2 (en) 2017-07-10 2021-08-03 Entegris, Inc. Hard abrasive particle-free polishing of hard materials
US11820918B2 (en) 2017-07-10 2023-11-21 Entegris, Inc. Hard abrasive particle-free polishing of hard materials

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GB201307480D0 (en) 2013-06-12
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GB2515173A (en) 2014-12-17

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