WO2014178016A3 - Dispositif optoélectronique non volatile - Google Patents

Dispositif optoélectronique non volatile Download PDF

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Publication number
WO2014178016A3
WO2014178016A3 PCT/IB2014/061118 IB2014061118W WO2014178016A3 WO 2014178016 A3 WO2014178016 A3 WO 2014178016A3 IB 2014061118 W IB2014061118 W IB 2014061118W WO 2014178016 A3 WO2014178016 A3 WO 2014178016A3
Authority
WO
WIPO (PCT)
Prior art keywords
graphene
opto
mos
volatile
electronic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2014/061118
Other languages
English (en)
Other versions
WO2014178016A2 (fr
Inventor
Kallol ROY
Medini PADMANABHAN
Arindam Ghosh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Indian Institute of Science IISC
Original Assignee
Indian Institute of Science IISC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Indian Institute of Science IISC filed Critical Indian Institute of Science IISC
Publication of WO2014178016A2 publication Critical patent/WO2014178016A2/fr
Publication of WO2014178016A3 publication Critical patent/WO2014178016A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Semiconductor Memories (AREA)
  • Light Receiving Elements (AREA)

Abstract

La présente invention concerne un dispositif optoélectronique de commutateur/mémoire pourvu d'une fine couche de graphène exfolié disposée sur une ou plusieurs couches de MoS2, ce qui forme une structure hétéro-hybride. L'architecture spécifique du dispositif est planaire. A cette fin, une feuille continue de graphène est disposée sur une feuille continue de MoS2 (graphène sur MoS2) et des contacts d'électrodes sont placés uniquement sur la couche de graphène, ce qui forme une géométrie plane.
PCT/IB2014/061118 2013-05-01 2014-04-30 Dispositif optoélectronique non volatile Ceased WO2014178016A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IN1963CH2013 2013-05-01
IN1963/CHE/2013 2013-05-01

Publications (2)

Publication Number Publication Date
WO2014178016A2 WO2014178016A2 (fr) 2014-11-06
WO2014178016A3 true WO2014178016A3 (fr) 2015-04-09

Family

ID=51844046

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2014/061118 Ceased WO2014178016A2 (fr) 2013-05-01 2014-04-30 Dispositif optoélectronique non volatile

Country Status (1)

Country Link
WO (1) WO2014178016A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104792830B (zh) * 2015-05-15 2017-06-16 哈尔滨工业大学 基于石墨烯/二硫化钼复合的气体敏感材料的制备方法
WO2017218488A1 (fr) 2016-06-13 2017-12-21 Cornell University Appareils comportant des contacts de bord ohmique d'épaisseur atomique entre des matériaux bidimensionnels, leurs procédés de fabrication, et dispositifs les comprenant
CN106784004A (zh) * 2016-12-12 2017-05-31 东莞市广信知识产权服务有限公司 一种石墨烯晶体管结构
CN107481924A (zh) * 2017-07-16 2017-12-15 北京工业大学 一种薄层石墨烯/二硫化钼侧向异质结的制备方法
US11022486B2 (en) 2018-02-12 2021-06-01 National University Of Singapore MoS2 based photosensor for detecting both light wavelength and intensity
CN111725348B (zh) * 2020-07-03 2021-06-01 北京科技大学 高光响应TiO2/MoS2异质结可见光探测器及制备
CN113540154B (zh) * 2021-06-25 2024-05-24 西安交通大学 基于二维材料的双异质结构的柔性光电探测器及其制备工艺

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120257446A1 (en) * 2008-07-18 2012-10-11 Seagate Technology Llc Unipolar spin-transfer switching memory unit
US20120258311A1 (en) * 2009-10-16 2012-10-11 Research & Business Foundation Sungkyunkwan University Roll-to-roll transfer method of graphene, graphene roll produced by the method, and roll-to-roll transfer equipment for graphene
WO2013048347A1 (fr) * 2011-09-29 2013-04-04 National University Of Singapore Dispositif ferroélectrique à base de graphène et contrôle optoélectronique de dispositif de mémoire ferroélectrique à base de graphène

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120257446A1 (en) * 2008-07-18 2012-10-11 Seagate Technology Llc Unipolar spin-transfer switching memory unit
US20120258311A1 (en) * 2009-10-16 2012-10-11 Research & Business Foundation Sungkyunkwan University Roll-to-roll transfer method of graphene, graphene roll produced by the method, and roll-to-roll transfer equipment for graphene
WO2013048347A1 (fr) * 2011-09-29 2013-04-04 National University Of Singapore Dispositif ferroélectrique à base de graphène et contrôle optoélectronique de dispositif de mémoire ferroélectrique à base de graphène

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
BERTOLAZZI, S ET AL.: "Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures.", ACS NANO, vol. 7, no. 4, 19 March 2013 (2013-03-19), pages 3246 - 3252, Retrieved from the Internet <URL:http://pubs.acs.org/doi/abs/10.1021/nn3059136> *

Also Published As

Publication number Publication date
WO2014178016A2 (fr) 2014-11-06

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