WO2014184876A1 - Dispositif pour éliminer des objets étrangers, et procédé de production d'une cellule solaire l'utilisant - Google Patents

Dispositif pour éliminer des objets étrangers, et procédé de production d'une cellule solaire l'utilisant Download PDF

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Publication number
WO2014184876A1
WO2014184876A1 PCT/JP2013/063439 JP2013063439W WO2014184876A1 WO 2014184876 A1 WO2014184876 A1 WO 2014184876A1 JP 2013063439 W JP2013063439 W JP 2013063439W WO 2014184876 A1 WO2014184876 A1 WO 2014184876A1
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WIPO (PCT)
Prior art keywords
brush
foreign matter
cell
matter removing
removing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2013/063439
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English (en)
Japanese (ja)
Inventor
光徳 中谷
黒田　章裕
浅野　聡也
聖 沖本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to PCT/JP2013/063439 priority Critical patent/WO2014184876A1/fr
Priority to JP2015516877A priority patent/JP6091610B2/ja
Priority to PCT/JP2013/079148 priority patent/WO2014184971A1/fr
Priority to TW103108967A priority patent/TWI514610B/zh
Publication of WO2014184876A1 publication Critical patent/WO2014184876A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/20—Cleaning of moving articles, e.g. of moving webs or of objects on a conveyor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
    • B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
    • B08B1/34—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members rotating about an axis parallel to the surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/04—Cleaning by suction, with or without auxiliary action
    • B08B5/043—Cleaning travelling work
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S40/00—Safety or protection arrangements of solar heat collectors; Preventing malfunction of solar heat collectors
    • F24S40/20—Cleaning; Removing snow
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/10—Cleaning arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/40—Solar thermal energy, e.g. solar towers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present invention relates to a foreign matter removing apparatus and a solar battery manufacturing method using the same, and more particularly, to a brush device that removes foreign matter adhering to the surface of a solar battery cell.
  • a solar battery cell is formed on a silicon substrate, a pn junction that converts light energy of sunlight into electrical energy, an antireflection film that is provided on the substrate on the light-receiving surface side and suppresses reflection of sunlight, and antireflection A collector electrode provided on the film and outputting electric energy to the outside is formed.
  • the antireflection film is formed of silicon nitride, and a plasma CVD apparatus is used for the film formation.
  • a silicon nitride film is formed on a silicon substrate as a substrate to be processed using a plasma CVD apparatus
  • the film is also formed on the inner wall, electrode, and stage inside the apparatus at the time of film formation. Then, these films are peeled off to become foreign substances, and fall onto the silicon substrate before, during or during processing. If foreign matter adhering in the process of forming the antireflection film is present on the silicon substrate, the current collecting electrode cannot be formed in a desired pattern when the current collecting electrode is formed by screen printing in the next process. Furthermore, foreign matter adheres to the pattern portion of the print mask, causing clogging. If pattern formation is performed using this print mask, the collector electrode cannot be formed in a desired pattern on another silicon substrate. Sometimes. That is, the same defect may occur even in a solar battery cell to which no foreign matter is attached. In order to suppress such defects, the printing mask is periodically replaced. However, there is a problem that productivity is reduced due to an increase in printing mask cost and time required for the replacement.
  • a method of forming an antireflection film having a thickness of 60 nm to 95 nm by a plasma CVD (Chemical-Vapor-Deposition) method is disclosed (for example, Patent Document 1).
  • the plasma CVD apparatus deposits a film made of the same material as the antireflection film in the chamber and peripheral jigs, and the film peels off and becomes a foreign substance and falls into the cell to cause a defect. cause.
  • the foreign matter comes out on the cell with a size of 1 mm or less.
  • the particle size distribution of the foreign matter 10 ⁇ m or less is 95% or more.
  • a comb-like grid electrode having a width of 30 ⁇ m to 150 ⁇ m is printed by a screen printing method. At this time, if a foreign substance having a size equal to or larger than the grid width blocks the opening of the mask, a printing defect occurs and cell characteristic defects continuously occur.
  • the texture step is generally 1 ⁇ m to 30 ⁇ m.
  • the texture is formed by a dry etching technique using plasma, the texture is 0.5 ⁇ m to 3 ⁇ m. There are many.
  • the foreign substance gets on the top of several textures and makes point contact to form a point contact part.
  • the CVD film is slightly deposited on the foreign matter, and the point contact portion is protected by the underlying cell and the CVD film having a thickness of several nm, and is difficult to remove. It is thought that it is in a state. If the CVD foreign matter is to be removed with a hard object, the pn junction formed on the surface of the solar battery cell is destroyed with a size equivalent to the size of the foreign matter, and the cell output is significantly deteriorated.
  • This CVD foreign matter can be easily removed by applying a force of about 0.1 N, but it is understood that with a general cell size of 156 mm ⁇ , several thousand foreign matters of 10 ⁇ m to 100 ⁇ m are carried on one cell. The foreign particles increase exponentially as the particle size decreases. It takes too much time to remove such countless foreign substances one by one, which is a major obstacle to production. For this reason, it is necessary to pay a great deal of labor for the maintenance of the chamber of the CVD film forming apparatus. Examples of the occurrence of CVD foreign matter are disclosed in Patent Document 2 and the like.
  • Patent Document 3 a method of cleaning foreign matter in the CVD chamber with a charging plate is disclosed.
  • Patent Document 4 discloses a rotating brush.
  • a protective film used in the production of a solar cell using a CdTe film is adhered to a hard resin rotating shaft and rubbed to remove it. Even if this apparatus is used for removing CVD foreign matter, the cell surface Is markedly scratched, leading to deterioration of characteristics.
  • the present inventors tried to remove the CVD foreign matter by rubbing the cell surface with a net or cloth formed of a soft resin made of vinyl, but even if the foreign matter could be removed, clear streak marks that can be visually recognized on the cell surface. I knew I could enter. In some cases, the pn junction in the texture portion was broken, or vinyl adhered to the top of the texture. When vinyl adheres to the textured shape, CVD foreign matter may adhere to the print mask and become clogged in the printing process, as in the case where CVD foreign matter has adhered.
  • Japanese Patent No. 4144241 Japanese Patent No. 3651977 JP 2009-144193 A JP 2001-15777 A
  • the present invention has been made in view of the above, and while removing CVD foreign matter that interferes with printing of fine line widths such as grid electrode widths of 30 ⁇ m to 150 ⁇ m, the cell surface is scratched or troubles occur in the printing process.
  • An object of the present invention is to obtain a foreign matter removing apparatus that does not cause the brush material to adhere to the cell surface and a method for producing a solar cell using the same.
  • the foreign matter removing device of the present invention is a foreign matter removing device that adheres to the surface of a solar cell, and a transport unit that holds and transports the solar cell on a smooth surface; A brush made of a large number of non-metallic hairs, which is in contact with the solar cells on the transport unit to remove foreign matter, and the tip of the brush is larger than the floating speed of the foreign matter to be removed. And a cleaning unit that performs air blowing at a speed for cleaning.
  • the present invention it is possible to avoid the pn junction breakage due to the lack of texture and to prevent the occurrence of defects in the printing process. As a result, it is possible not only to improve the cell non-defective rate and the productivity, but also to form a fine grid electrode even in a fine region with a large distribution of CVD foreign matter. Therefore, the cell output can be improved and the cost can be reduced, and high-quality solar cells can be provided with high productivity.
  • FIG. 1 is a schematic view of a rotating brush device of the present invention.
  • FIG. 2 is a schematic diagram of the AA cross-sectional view of FIG. 1 showing the rotary brush device of the present invention.
  • FIG. 3 is a schematic view of a rotating brush device without a cell edge receiving roller.
  • FIG. 4 is an enlarged view of a main part of FIG.
  • FIG. 5 is a schematic view when the bristles of the rotating brush are disturbed.
  • FIG. 6 is a schematic diagram for obtaining the outer diameter accuracy by rotating the rotating brush at a high speed to straighten the hair tips and cutting the hair tips.
  • FIG. 7A is an arrangement and function diagram of a turntable type printing stage.
  • FIG. 7-2 is a schematic diagram of a foreign matter removing apparatus using a flat brush.
  • FIG. 8-1 is a cross-sectional view for explaining the configuration of the solar battery cell according to the third embodiment of the present invention.
  • FIG. 8-2 is a top view for explaining the configuration of the solar battery cell according to the third embodiment of the present invention.
  • FIG. 8-3 is a bottom view for explaining the configuration of the solar battery cell according to the third embodiment of the present invention.
  • FIG. 9 is a flowchart for explaining a manufacturing process of the solar battery cell according to the third embodiment of the present invention.
  • FIG. 10-1 is a cross-sectional view for explaining a manufacturing step for the solar battery cell according to the third embodiment of the present invention.
  • FIG. 10-2 is a cross-sectional view for explaining a manufacturing step for the solar battery cell according to the third embodiment of the present invention.
  • FIG. 10-1 is a cross-sectional view for explaining a manufacturing step for the solar battery cell according to the third embodiment of the present invention.
  • FIG. 10-2 is a cross-sectional view for explaining a manufacturing step for the solar battery cell according
  • FIG. 10-3 is a cross-sectional view for explaining a manufacturing step for the solar battery cell according to the third embodiment of the present invention.
  • FIG. 10-4 is a cross-sectional view for explaining a manufacturing step for the solar battery cell according to the third embodiment of the present invention.
  • FIG. 10-5 is a cross-sectional view for explaining a manufacturing step for the solar battery cell according to the third embodiment of the present invention.
  • FIG. 10-6 is a cross-sectional view for explaining a manufacturing step for the solar battery cell according to the third embodiment of the present invention.
  • FIG. 10-7 is a cross-sectional view for explaining a manufacturing step for the solar battery cell according to the third embodiment of the present invention.
  • FIG. 10-3 is a cross-sectional view for explaining a manufacturing step for the solar battery cell according to the third embodiment of the present invention.
  • FIG. 10-4 is a cross-sectional view for explaining a manufacturing step for the solar battery cell according to the third embodiment of the present invention.
  • FIG. 10-5 is a cross-
  • FIG. 11A is a process cross-sectional view illustrating the foreign matter removing process according to the third embodiment of the present invention.
  • FIG. 11-2 is a process cross-sectional view illustrating the foreign matter removing process according to the third embodiment of the present invention.
  • FIG. 11-3 is a process cross-sectional view illustrating the foreign matter removing process according to the third embodiment of the present invention.
  • FIG. FIG. 1 is a cross-sectional view of foreign matter removal according to Embodiment 1 of the present invention, and is mounted on a transport belt 20 that transports a solar battery cell (hereinafter also referred to as a cell) after CVD film formation.
  • This foreign matter removing device is a device for removing foreign matter adhering to the surface of a cell 10 constituting a solar battery, and removes foreign matter by bringing it into contact with the transport belt 20 as a transport section and the cell 10 on the transport belt 20. It has a rotating brush 37 and a cleaning unit.
  • the conveyance belt 20 conveys the cell 10 while holding the cell 10 on a smooth surface.
  • the rotating brush 37 is made of a high-molecular fiber made of a large number of non-metallic hairs and having a hardness lower than that of silicon, which is a substrate for a solar battery constituting a solar battery cell.
  • the cleaning unit cleans the tip of the rotating brush 37 by blowing air at a speed larger than the floating speed of the foreign matter to be removed.
  • FIG. 4 is an enlarged view of a main part of FIG.
  • an n-type impurity diffusion layer 3 is formed by phosphorus diffusion as a second conductivity type semiconductor layer on the light-receiving surface side of a p-type single crystal silicon substrate as a substrate 2, and a semiconductor having a pn junction.
  • a substrate 11 is configured.
  • the outline of the function of FIG. 1 is that the cell 10 on the conveyor belt 20 is conveyed, and the coarse foreign particles 14G are removed and collected to the dust collector 36 using the air blow 35 in the first stage, and the rotating brush 37 in the second stage. Is used to remove and collect the foreign particle 14 adhering to the cell 10 to the dust collector 41.
  • the foreign matter coarse particles 14G and the foreign matter fine particles 14 sandwiched between the hairs of the rotating brush 37 between the hairs and the hairs do not contain metal that has been subjected to antistatic measures.
  • the tip of the rotating brush 37 is wiped off with the sexual wiper plate 40 or blown off to the tip of the rotating brush 37 with the air blow 42 and collected by the dust collector 41 or the dust collector 43.
  • the cover 44 be a cylindrical body having a constant cross section and the duct cross-sectional area be constant in the vicinity of the rotating brush 37.
  • the conveyance belt 20 is provided with several suction holes of 1 to 3 mm ⁇ per cell. By suctioning through the suction holes, suction is performed at a negative pressure of several tens of kPa per cell. Yes.
  • the suction hole prevents the cell 10 from being displaced on the conveyor belt 20, and when removing the cell 10 from the conveyor belt 20, the suction is turned off and the negative pressure is released.
  • the cell 10 is moved from the left to the right in the drawing by the conveyor belt 20.
  • the conveyance belt 20 and the cell are integrated and repeatedly accelerate and decelerate.
  • FIG. 1 shows a state in which CVD foreign matters such as foreign matter coarse particles 14G and foreign matter fine particles 14 are placed on the cell 10.
  • the CVD foreign substances are coarse foreign particles 14G that can be removed by floating with an air blow 35, foreign particles 14 that can be removed with a rotating brush 37, and the like.
  • the floating speed is 0.3 m / sec if it is a spherical particle of 50 ⁇ m size, which is a problem in the grid printing process.
  • the floating speed In the 10 ⁇ m size, the floating speed is 0.01 m / sec.
  • the floating speed varies exponentially with the particle size. Large coarse particles with a size of 0.1 mm soar with an air blow of 1 to 2 m / sec.
  • the rotary brush 37 is preferably made of a general-purpose material of a linear fiber that is soft and has a hardness that does not damage the cell surface, such as vinyl chloride resin or nylon resin.
  • the brush contains metal or the surface is contaminated, the output of the solar cell is greatly deteriorated.
  • the surface of the silicon crystal solar battery cell exceeds 2E12 atoms / cm 2 , the cell output is significantly reduced.
  • the brush material contains 1000 ppm or more of Fe, if the brush marks adhere to the texture surface at a density of 1E-3 / mm 2 with a volume of 1 ⁇ m 3 , the cell output begins to decrease.
  • a rotating brush 37 is a structure in which several thousand or more hairs are bundled and wound around the rotating shaft 39.
  • the diameter of the hair of the brush should ideally be determined by the size of the foreign matter to be removed and the texture size formed on the cell surface. Limited by.
  • the diameter of the hair of the brush is also determined by the accuracy of the cut surface of the hair tip.
  • the average size of the CVD foreign particles 14 of the target to be removed is 50 ⁇ m
  • one hair of the rotating brush is desirably 50 ⁇ m ⁇ and 5 to 40 mm long. Particularly desirable is 10 to 30 mm.
  • the density of the hairs of the brush is 40,000 / cm 2 for each hair of 50 ⁇ m ⁇ .
  • the cross-sectional area density of the ciliary body is ⁇ / 4 to 80%.
  • the force applied at that time is 20 Pa, which is sufficiently smaller than the cell breaking stress.
  • the hair cross-sectional area density required for the hair of the brush to be surely removed by contact with foreign matter on the cell surface must be 20% or more.
  • the foreign particle 14 which is a CVD foreign substance is rotated on a rotating shaft 39 by a motor (not shown) to bring the rotary brush 37 into contact with the cell 10.
  • a motor not shown
  • the rotary brush 37 has a configuration in which the height can be accurately positioned on the micron order by a vertical drive motor.
  • the hair at the tip of the brush becomes a wholesale state with a hard pyramid-like texture (not shown) of the cell 10, and the hair tip Is scraped off to the top of the texture, and part of it is caught on the top of the texture, and the white streak-like brush marks can be visually observed.
  • the amount of pushing of the rotating brush 37 into the cell 10 is 0.001 to 3 mm. From the viewpoint of safety, it is desirable that the amount of pushing of the rotating brush 37 into the cell 10 is 0.001 to 0.1 mm. This brush mark induces a printing failure in a later printing process.
  • brush marks are made of brush material. If it is a grade which does not generate
  • the parameters that influence the brush mark are the amount of pressing of the brush to the cell, the number of rotations of the brush, the accuracy of the brush outer diameter, and the accuracy of brush pressing control.
  • the brush rotation speed is lowered, the CVD foreign matter removal rate is likely to be lowered. Therefore, brush marks should be suppressed with other parameters.
  • FIG. 2 is a cross-sectional view taken along the line AA in FIG.
  • the cell 10 protrudes outward from the conveyor belt 20, and when the rotating brush 37 is pressed, the periphery of the cell 10 warps downward, causing problems such as defective cell adsorption, defective cell conveyance, and broken cells. It becomes.
  • the receiving roller 38 can be synchronized at the same height as the conveying belt 20 as shown in FIG. 2, the rotation direction is opposite to the rotating brush 37 as shown in FIG. 1, and the same peripheral speed as the conveying belt 20. desirable.
  • FIG. 3 shows a case where the receiving roller 38 is not provided.
  • FIG. 5 shows a schematic diagram of a normal rotating brush 45 in which the bristles and hair lengths are not uniform.
  • the brush outer diameter is 80 mm ⁇ 2 mm, which is a problem level for brush marks.
  • the rotating brush 37 has its hair tips straightened by centrifugal force as shown in FIG. You can take a spear.
  • the cutting blade 46 which cuts a hair-like body, and cuts the outer diameter of the rotary brush 37 from which the length of a hair-like body differs in this cut blade 46 to a desired value.
  • the tip of a brush the tip is bent due to airflow turbulence if there is a disturbing stationary object because of high-speed rotation. For this reason, it is desirable to use a vacuum when cutting the brush tip.
  • the outer diameter, height, and rotation speed of the rotating brush 37 can be controlled with high accuracy in FIG. 1, when the level is set to the same level as the texture height, the conveyor belt 20 and the receiving roller 38 operate at the same speed in conjunction with the rotating brush 37. Synchronize with. For this reason, even in a region where the relative speed between the cell surface and the brush tip exceeds 600 mm / sec or more, the CVD foreign particle 14 is bounced by the tip of the rotating brush 37 and removed into the air. At this time, when the brush bristles begin to rub against the cell surface, the ciliary body is pushed back and most of the ciliary body does not come into contact with the cell surface, so that a brush mark is hardly generated.
  • the tip cut portion of one hair of the rotating brush can be cut in a vertical section, and the outer diameter of the rotating brush is close to the accuracy of the cut surface of one hair of the rotating brush. .
  • the accuracy of the amount of pushing the rotating brush 37 into the cell 10 is close to the diameter of one brush hair, so the outer diameter of one brush hair is reduced, and one hair The longer the length, the better to suppress the brush marks.
  • the outer diameter of the brush hair is preferably 0.2 mm or less. If it exceeds 0.2 mm, the accuracy of the amount by which the rotary brush 37 is pushed into the cell 10 cannot be obtained. However, if the outer diameter of the brush hair is too thin, the processing and operability of the hair tend to be poor.
  • the foreign particle 14 blown from the surface of the cell 10 by the rotating brush 37 is 50 ⁇ m ⁇ and has a floating speed of 0.3 m / sec, it is exhausted with a larger air volume and collected by the second dust collector 41.
  • the foreign particle coarse particles 14G and the foreign particle 14 may be sandwiched between the hairs of the rotating brush 37 and the hairs. If the surface of the cell 10 is rubbed with the rotating brush 37 in this state, the cell 10 is scratched and the cell output deteriorates. Therefore, it is desirable that the rotating brush 37 is completely wiped off during one rotation.
  • the texture of the texture is determined by pressing the rotating brush produced with the same level of accuracy as the texture size against the cell immediately after film formation of the CVD film by an amount corresponding to the texture size. It is possible to avoid pn junction breakage due to chipping, and to remove only the CVD foreign matter with the rotational force of the brush.
  • FIG. The rotary brush 37 according to the first embodiment is preferably used for removing foreign substances caused by CVD, but there are cases where foreign substances adhering during conveyance are desired to be removed at the same time in the printing process, which is a subsequent process of the CVD film forming process. Therefore, in this embodiment, a foreign matter removing apparatus using a flat brush will be described.
  • FIG. 7A is a diagram illustrating an overall layout of the printing apparatus when the foreign matter removing apparatus is attached to the printing apparatus, and is a turntable printing apparatus.
  • the four stages R1 to R4 of the turntable 21 are arranged symmetrically in the vertical and horizontal directions and in point symmetry, and the function of the order in which the cells 10 are supplied and processed is as follows: input positioning position R1 ⁇ brush cleaning position R2 ⁇ printing position R3 ⁇ print inspection cell discharge position R4.
  • FIG. 7-2 is an enlarged view of a main part showing a brush cleaning position R2 for cleaning the second cell surface.
  • the turntable 21 is rotated, in which contacting is lowered downward (V 1) to the extent that the brush tip touches the cell 10 adsorbed to the stage 22 with a flat brush 49.
  • V 1 contacting is lowered downward
  • H 2 retracted upward
  • V 2 when finished.
  • the turntable 21 rotates and the cell moves to the next printing position R3
  • the turntable 21 moves from right to left (H 1 ) from top to bottom (V 1 ) and returns to the original position.
  • the flat brush 49 may be made of the material, scan speed, and push-in amount described in the first embodiment, but the flat brush 49 corrects wrinkles when the hair tips are bent and wrinkled compared to the rotating brush 37. Is difficult, and the amount of pushing into the cell varies.
  • the flat brush 49 has a life shorter than that of the rotating brush 37 due to scissors, and it is difficult to control the height, but the same effect as that of the rotating brush 37 can be obtained, and the device is simple and easy to use.
  • a minute scratch on the cell surface induces device characteristics deterioration, but a minute scratch on the back surface of the cell has a likelihood.
  • a linear brush that is, a flat brush 49
  • the pushing depth of the cell 10 into the bristles is about 0 to 5 mm from the cell passing part and pushed so as to come into contact.
  • the CVD foreign matter adhering to the back surface of the cell can be removed. Since the cell 10 is damaged when the pushing depth of the cell 10 into the bristles of the flat brush 49 exceeds 5 mm, it is desirable not to exceed 5 mm.
  • one hair of the flat brush 49 has a length of about 50 ⁇ m ⁇ and a length of 5 to 40 mm. Particularly desirable is 10 to 30 mm. If the length of the ciliary body exceeds 40 mm, it is difficult to obtain processing accuracy when cutting the hair tips. Also, as you continue to use it, the hair tips will bend and become wrinkled easily. In particular, in the case of a flat brush, it is difficult to correct wrinkles. Further, if the length of the ciliary body is not less than 5 mm, it becomes easy to be scratched.
  • FIG. 8A is a cross-sectional view for explaining the configuration of the solar battery cell 10 according to the embodiment of the present invention
  • FIG. 8B is a top view of the solar battery cell 10 viewed from the light receiving surface side
  • FIG. 3 is a bottom view of the solar battery cell 10 as viewed from the side opposite to the light receiving surface.
  • FIG. 8-1 is a cross-sectional view in the XX direction of FIG. 8-3.
  • FIG. 9 is a flowchart showing a manufacturing process of the solar battery cell 10.
  • an n-type impurity diffusion layer 3 is formed by phosphorus diffusion as a second conductivity type semiconductor layer on the light-receiving surface side of a p-type single crystal silicon substrate as a substrate 2, and a semiconductor having a pn junction.
  • a substrate 11 is configured.
  • An antireflection film 4 made of a silicon nitride film (SiN film) is formed on the n-type impurity diffusion layer 3.
  • a foreign matter removing step (FIG. 9: Step S40) using the rotating brush 37 is added.
  • the substrate 2 is not limited to a p-type single crystal silicon substrate, and a p-type polycrystalline silicon substrate may be used.
  • n-type impurity diffusion layer 3 fine irregularities are formed as a texture structure.
  • the micro unevenness increases the area for absorbing light from the outside on the light receiving surface, suppresses the reflectance on the light receiving surface, and has a structure for confining light.
  • a light receiving surface side electrode 12 including the surface silver grid electrode 6 and the surface silver bus electrode 5 is formed on the light receiving surface side of the semiconductor substrate 11.
  • the front silver bus electrode 5 is provided so as to be orthogonal to the front silver grid electrode 6 and is electrically connected to the n-type impurity diffusion layer 3 at the bottom surface portion.
  • the front silver bus electrode 5 and the front silver grid electrode 6 are made of a silver material.
  • a back surface electrode 7 made of an aluminum material is provided on the entire back surface (surface opposite to the light receiving surface) of the semiconductor substrate 11, and extends in the same direction as the front silver bus electrode 5 and made of a silver material.
  • a back surface collecting electrode 8 is provided. The back electrode 7 and the back collecting electrode 8 constitute a back electrode 13 as the second electrode.
  • solar cell 10 configured in this way, sunlight is applied to the pn junction surface (the junction surface between substrate 2 and n-type impurity diffusion layer 3) of semiconductor substrate 11 from the light-receiving surface side of solar cell 10. Then, holes and electrons are generated. Due to the electric field at the pn junction, the generated electrons move toward the n-type impurity diffusion layer 3, and the holes move toward the substrate 2. As a result, electrons are excessive in the n-type impurity diffusion layer 3 and holes are excessive in the substrate 2. As a result, a photovoltaic force is generated.
  • This photovoltaic power is generated in the direction of biasing the pn junction in the forward direction, the light receiving surface side electrode 12 connected to the n-type impurity diffusion layer 3 becomes a negative pole, and the back surface side electrode 13 connected to the substrate 2 becomes a positive pole. Thus, a current flows through an external circuit (not shown).
  • FIG. 9 is a flowchart for explaining a manufacturing process of the solar battery cell 10.
  • 10-1 to 10-7 are cross-sectional views for explaining the manufacturing process of the solar battery cell.
  • a p-type single crystal silicon substrate is prepared as the substrate 2, and the p-type single crystal silicon substrate is cleaned using hydrogen fluoride, pure water, or the like. Thereafter, fine irregularities are formed on the surface of the p-type single crystal silicon substrate to form a texture structure (pyramid structure) on the surface (FIG. 9: Step S10, FIG. 10-1). ).
  • a texture formation for example, a p-type single crystal silicon substrate is etched with an aqueous alkali solution such as an aqueous sodium hydroxide solution (additives may be added in some cases).
  • the p-type single crystal silicon substrate is put into a thermal oxidation furnace and heated in the presence of phosphorus oxychloride (POCl 3 ) vapor to form phosphorus glass on the surface of the p-type single crystal silicon substrate.
  • phosphorus is diffused into the p-type single crystal silicon substrate, the n-type impurity diffusion layer 3 is formed on the surface layer of the p-type single crystal silicon substrate, and a pn junction is formed (FIG. 9: Step S20, FIG. 10). -2).
  • Removal is performed by wet etching using a mixed acid of acid (HF) / nitric acid (HNO 3 ) / sulfuric acid (H 2 SO 4 ).
  • HF acid
  • HNO 3 nitric acid
  • SO 4 sulfuric acid
  • a SiN film is formed on the n-type impurity diffusion layer 3 as the antireflection film 4 by plasma CVD (FIG. 9: Step S30, FIG. 10-4).
  • the film thickness and refractive index of the antireflection film 4 are set to values that most suppress light reflection. Note that two or more layers having different refractive indexes may be laminated as the antireflection film 4.
  • the antireflection film 4 may be formed by a different film forming method such as a sputtering method.
  • Step S40 the surface of the antireflection film 4 is lightly rubbed by the foreign matter removing device using the rotating brush 37 shown in FIG. 1 to remove the foreign matter attached to the surface.
  • This process is a feature of the present embodiment, and this process will be described in detail later.
  • Electrodes are formed by screen printing.
  • the back side electrode 13 is created (before firing). That is, the aluminum paste 7a as the electrode material paste is applied to the shape of the back electrode 7 by screen printing on the back side of the p-type single crystal silicon substrate, and dried at about 100 ° C. to 300 ° C. Further, a silver paste 8a as an electrode material paste is applied to the shape of the back surface collecting electrode 8, and dried at about 100 ° C. to 300 ° C. (FIG. 9: Step S50, FIG. 10-5).
  • the light receiving surface side (surface side) electrode 12 is prepared (before firing). That is, after applying the silver paste 12a to the shape of the front silver bus electrode 5 and the front silver grid electrode 6 on the antireflection film 4 which is the light receiving surface of the p-type single crystal silicon substrate as the substrate 2, by screen printing, The silver paste is dried (FIG. 9: Step S60, FIG. 10-6).
  • the paste is baked at a temperature of about 700 ° C. to 900 ° C. for a time of several minutes to ten and several minutes.
  • the front silver bus electrode 5 and the front silver grid electrode 6 as the light receiving surface side electrode 12, and the back electrode 7 and the back surface collecting electrode 8 as the back surface side electrode 13 are obtained (FIG. 9: Step S70, FIG. 10). -7).
  • the solar battery cell 10 shown in FIGS. 8-1 to 8-3 can be manufactured.
  • the order of arrangement of the paste, which is an electrode material, on the semiconductor substrate 11 may be switched between the light receiving surface side and the back surface side.
  • FIGS. 11A to 11C are enlarged cross-sectional views of the main parts showing the foreign matter removing step S40 according to the present embodiment.
  • the formation process of the antireflection film FIG. 9: Step S30
  • the electrode material paste when the SiNOH film is formed using the plasma CVD method, foreign substances fall and adhere to the semiconductor substrate during the film formation.
  • the following inconveniences may occur in the printing process. That is, when the electrode material paste is applied to the surface of the solar battery cell by screen printing, the electrode material paste may not be applied in a desired shape to a place where the foreign material is present.
  • the electrode material paste cannot be applied in a desired shape due to the clogging of foreign matter in the printing mask pattern, the electrode material paste may not be applied in the desired shape even in a solar battery cell without foreign matter adhesion. is there.
  • the electrode material paste cannot be applied in a desired shape as described above, the photoelectric conversion efficiency is lowered due to a decrease in curvature factor (F.F), and if the desired photoelectric conversion efficiency cannot be obtained, it becomes defective. The rate increases.
  • the productivity decreases.
  • step S40 the foreign matter removing apparatus shown in FIG.
  • the surface of the antireflection film is rubbed with the rotating brush 37 while air blowing.
  • FIG. 11A is an enlarged view of the vicinity of the surface of the semiconductor substrate 11 when the foreign particle 14 adheres before the antireflection film 4 is formed. This step corresponds to an enlarged view of the vicinity of the surface of the semiconductor substrate 11 during the step of forming the antireflection film 4 in FIG. 10-4.
  • foreign particles 14 Prior to the formation of the antireflection film 4, foreign particles 14 (or coarse particles) fall from the CVD apparatus to the n-type impurity diffusion layer 3 and adhere to the surface of the n-type impurity diffusion layer 3.
  • the antireflection film 4 is formed so as to surround the periphery of the foreign particle 14 as shown in FIG. A portion where the antireflection film 4 surrounds the foreign fine particles 14 as in the portion A in FIG. 11-2 has a low foreign matter removal rate in the water washing treatment.
  • the foreign particles 14 are peeled off including the antireflection film 4 that wraps around the foreign particles 14 as in the A ′ portion by lightly rubbing with the rotating brush 37. .
  • a physical process of rubbing with the rotating brush 37 is used in the third embodiment, but a fluorine gas system (F 2 , NF 3 , ClF) is used. Chemical treatment such as dry etching treatment with plasma of 3 ) may be used in combination.
  • the hair material constituting the rotating brush 37 must be made of silicon oxynitride or a material that is sufficiently softer than silicon.
  • a soft material having a Mohs hardness of 3 or less is preferable. Examples thereof include nylon and polypropylene.
  • the hair diameter of the rotating brush is preferably 10 to 100 ⁇ m.
  • the surface of the antireflection film 4 when the surface of the antireflection film 4 is brushed with the rotating brush 37 to which the foreign particle 14 is attached by the brushing process, a desired foreign matter removal rate may not be obtained due to the reattachment.
  • the surface of the antireflection film 4 (silicon nitride) or the n-type impurity diffusion layer 3 (silicon) may be damaged or the texture structure may be destroyed. These all cause a decrease in photoelectric conversion efficiency.
  • a dust collector 43 that sucks the foreign particle 14 or coarse particle 14G attached to the brush is installed in the removing mechanism including the rotating brush 37, and the foreign matter adhered to the rotating brush. Remove. Thereby, a desired foreign matter removal rate can be stably obtained, and it is possible to prevent the silicon nitride or silicon from being damaged or the texture structure from being destroyed.
  • the diffusion type solar cell in which the n-type impurity is diffused in the p-type single crystal silicon substrate to form the pn junction has been described.
  • the n-type single crystal silicon substrate, the n-type polycrystalline silicon substrate, etc. It can be applied to other optical elements such as thin film EL elements as well as thin film solar cells in which a pn junction is formed by forming a p-type amorphous silicon layer, a p-type polycrystalline silicon layer, etc. on the surface of a silicon substrate. .
  • the antireflection film is not limited to a silicon oxynitride film, but is a silicon oxynitride film, a silicon nitride film, or a multilayer film in which a silicon oxynitride film, a silicon nitride film, etc. are laminated. This is particularly effective for an inorganic film formed by vapor deposition in a chamber such as an apparatus.
  • the foreign matter removing apparatus and the solar cell manufacturing method using the same according to the present invention are useful for removing foreign matters without damaging the surface, and in particular, solar cells after formation of a CVD film. It is suitable for removing foreign substances on the substrate surface.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Cleaning In General (AREA)
  • Photovoltaic Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Dans la présente invention, une brosse rotative (37) de poils souples, produite avec une grande précision et un diamètre extérieur équivalent à une taille de texture, est mise en contact avec une cellule (solaire) (10) immédiatement après production d'un film CVD en une quantité correspondant à la taille de texture ; la rupture des jonctions p-n résultant d'une fragmentation de la texture est évitée ; et seuls les objets étrangers CVD, tels que des microparticules (14) d'objets étrangers et des particules grossières (14G) d'objets étrangers, sont éliminés au moyen de la force de rotation de la brosse rotative (37). En conséquence, il est possible de produire une cellule solaire sans que le matériau de la brosse adhère à la surface de la cellule au point d'occasionner des problèmes lors de l'étape d'impression et de provoquer des rayures sur la surface de la cellule, tout en éliminant les objets étrangers CVD, qui conduisent à un empêchement de l'impression d'une électrode de grille ayant une largeur de 30-150 µm.
PCT/JP2013/063439 2013-05-14 2013-05-14 Dispositif pour éliminer des objets étrangers, et procédé de production d'une cellule solaire l'utilisant Ceased WO2014184876A1 (fr)

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PCT/JP2013/063439 WO2014184876A1 (fr) 2013-05-14 2013-05-14 Dispositif pour éliminer des objets étrangers, et procédé de production d'une cellule solaire l'utilisant
JP2015516877A JP6091610B2 (ja) 2013-05-14 2013-10-28 異物除去装置及びこれを用いた太陽電池の製造方法
PCT/JP2013/079148 WO2014184971A1 (fr) 2013-05-14 2013-10-28 Dispositif d'élimination d'objets étrangers et procédé pour la production de photopile utilisant
TW103108967A TWI514610B (zh) 2013-05-14 2014-03-13 A foreign matter removing device, and a method of manufacturing the solar cell using the same

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CN105457925A (zh) * 2015-12-25 2016-04-06 苏州达力客自动化科技有限公司 一种电池极片清粉机
CN106180075A (zh) * 2016-09-30 2016-12-07 宁德时代新能源科技股份有限公司 应用于电芯的清洁装置及加工设备
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CN105457925A (zh) * 2015-12-25 2016-04-06 苏州达力客自动化科技有限公司 一种电池极片清粉机
CN105458887B (zh) * 2015-12-25 2017-07-21 苏州达力客自动化科技有限公司 一种电池极片往复打磨装置
CN105457925B (zh) * 2015-12-25 2017-07-28 苏州达力客自动化科技有限公司 一种电池极片清粉机
CN106180075A (zh) * 2016-09-30 2016-12-07 宁德时代新能源科技股份有限公司 应用于电芯的清洁装置及加工设备
CN108273774A (zh) * 2018-01-19 2018-07-13 德淮半导体有限公司 清洁装置及清洁方法、晶圆加工装置及加工方法
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CN112452861A (zh) * 2020-11-04 2021-03-09 展影影 基于人工智能的光伏清洁机器人除冰雪调节方法及装置
CN113578827A (zh) * 2021-08-25 2021-11-02 李澳旗 一种用于多风沙地区使用的光伏板表面清扫装置

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