WO2014205706A1 - Photodiode - Google Patents

Photodiode Download PDF

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Publication number
WO2014205706A1
WO2014205706A1 PCT/CN2013/078087 CN2013078087W WO2014205706A1 WO 2014205706 A1 WO2014205706 A1 WO 2014205706A1 CN 2013078087 W CN2013078087 W CN 2013078087W WO 2014205706 A1 WO2014205706 A1 WO 2014205706A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
region
type
photodiode
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2013/078087
Other languages
English (en)
Chinese (zh)
Inventor
张云山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LIN Dai Wei
Original Assignee
LIN Dai Wei
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LIN Dai Wei filed Critical LIN Dai Wei
Priority to JP2016522162A priority Critical patent/JP6216448B2/ja
Priority to PCT/CN2013/078087 priority patent/WO2014205706A1/fr
Publication of WO2014205706A1 publication Critical patent/WO2014205706A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers

Definitions

  • the object of the present invention is to provide a photodiode, which is disposed at a certain distance from the well region by a layout design, and solves the problem that the isolation layer of the photodiode element in the prior art is adjacent to the N-type due to high stress.
  • a second type doped region is formed in the second type doping well and extends from a surface of the second type doping well;
  • the isolation region is silicon nitride or silicon oxide.
  • the absorption depth of the incident light in the photodiode is related to the wavelength of the incident light, the shorter wavelength light is absorbed by the surface portion of the photodiode, and the longer wavelength light has a deeper absorption path.
  • the photodiode complementary metal oxide image sensing element senses the optical language with infrared light (700 ⁇ 800nm), and the best quantum efficiency has a wavelength of 850 nm.
  • the spectral response curve is increased with the increase of the wavelength of light, because the long-wavelength photon penetration depth is deeper, and the conversion efficiency is improved close to the PN junction. (The internal electric field of the PN junction can efficiently disassemble the electrons after absorbing the photons.

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

La présente invention porte sur une photodiode. La photodiode comprend un premier substrat ; le premier substrat comprend un second puits dopé et une seconde région dopée dans celui-ci, et une couche d'isolation est formée pour entourer le second puits dopé et vient en non contact avec le second puits dopé ; la seconde région dopée est formée dans le second puits dopé et s'étend depuis la surface du second puits dopé ; la photodiode comprend en outre une couche de protection qui recouvre le premier substrat, et un conducteur de contact qui circule à travers la couche de protection et comprend une couche de contact et une bande conductrice ; la couche de contact est formée au niveau d'une extrémité de la bande conductrice, vient en contact avec la seconde région dopée et est connectée à la seconde région dopée. En comparaison avec l'état antérieur de la technique, la région d'isolation de la photodiode selon la présente invention ne possède aucun contact avec le second puits dopé, empêchant ainsi des brouillages de courants sombres qui proviennent possiblement d'un défaut d'interface entre la couche d'isolation et une région active.
PCT/CN2013/078087 2013-06-26 2013-06-26 Photodiode Ceased WO2014205706A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016522162A JP6216448B2 (ja) 2013-06-26 2013-06-26 フォトダイオード
PCT/CN2013/078087 WO2014205706A1 (fr) 2013-06-26 2013-06-26 Photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2013/078087 WO2014205706A1 (fr) 2013-06-26 2013-06-26 Photodiode

Publications (1)

Publication Number Publication Date
WO2014205706A1 true WO2014205706A1 (fr) 2014-12-31

Family

ID=52140809

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2013/078087 Ceased WO2014205706A1 (fr) 2013-06-26 2013-06-26 Photodiode

Country Status (2)

Country Link
JP (1) JP6216448B2 (fr)
WO (1) WO2014205706A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116154022A (zh) * 2023-03-14 2023-05-23 江南大学 一种双层SiO2隔离的光电二极管结构、阵列及制造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080217666A1 (en) * 2007-03-07 2008-09-11 United Microelectronics Corp. Cmos image sensor and method of fabricating the same
CN101286518A (zh) * 2007-04-12 2008-10-15 上海宏力半导体制造有限公司 光电二极管装置
CN101304005A (zh) * 2007-05-08 2008-11-12 中芯国际集成电路制造(上海)有限公司 Cmos图像传感器的形成方法
JP2010177273A (ja) * 2009-01-27 2010-08-12 Oki Semiconductor Co Ltd 半導体装置の製造方法
CN101901849A (zh) * 2009-05-26 2010-12-01 松下电器产业株式会社 光半导体装置
CN102334199A (zh) * 2009-02-24 2012-01-25 浜松光子学株式会社 光电二极管以及光电二极管阵列
CN103325881A (zh) * 2013-06-26 2013-09-25 林大伟 光电二极管

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998020561A1 (fr) * 1996-11-01 1998-05-14 Lawrence Berkeley Laboratory Fenetre laissant passer les photons, de faible resistivite, fixee a un detecteur au silicium photosensible
DE10024473B4 (de) * 2000-05-18 2007-04-19 Vishay Semiconductor Gmbh Optischer Empfänger
JP2005093549A (ja) * 2003-09-12 2005-04-07 Seiko Instruments Inc 光電変換装置及びイメージセンサーｉｃ
US7652257B2 (en) * 2007-06-15 2010-01-26 General Electric Company Structure of a solid state photomultiplier
JP2009158569A (ja) * 2007-12-25 2009-07-16 Seiko Instruments Inc 光検出半導体装置、光検出装置、及び画像表示装置
JP5387212B2 (ja) * 2009-07-31 2014-01-15 富士通セミコンダクター株式会社 半導体装置及びその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080217666A1 (en) * 2007-03-07 2008-09-11 United Microelectronics Corp. Cmos image sensor and method of fabricating the same
CN101286518A (zh) * 2007-04-12 2008-10-15 上海宏力半导体制造有限公司 光电二极管装置
CN101304005A (zh) * 2007-05-08 2008-11-12 中芯国际集成电路制造(上海)有限公司 Cmos图像传感器的形成方法
JP2010177273A (ja) * 2009-01-27 2010-08-12 Oki Semiconductor Co Ltd 半導体装置の製造方法
CN102334199A (zh) * 2009-02-24 2012-01-25 浜松光子学株式会社 光电二极管以及光电二极管阵列
CN101901849A (zh) * 2009-05-26 2010-12-01 松下电器产业株式会社 光半导体装置
CN103325881A (zh) * 2013-06-26 2013-09-25 林大伟 光电二极管

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116154022A (zh) * 2023-03-14 2023-05-23 江南大学 一种双层SiO2隔离的光电二极管结构、阵列及制造方法
CN116154022B (zh) * 2023-03-14 2024-03-22 江南大学 一种双层SiO2隔离的光电二极管结构、阵列及制造方法

Also Published As

Publication number Publication date
JP2016526791A (ja) 2016-09-05
JP6216448B2 (ja) 2017-10-18

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