WO2015013628A3 - Procédés de fabrication de dispositifs à jonctions noyées dans du carbure de silicium faisant appel à la formation d'un canal d'implantation ionique, et dispositifs à base de carbure de silicium comprenant des jonctions noyées - Google Patents

Procédés de fabrication de dispositifs à jonctions noyées dans du carbure de silicium faisant appel à la formation d'un canal d'implantation ionique, et dispositifs à base de carbure de silicium comprenant des jonctions noyées Download PDF

Info

Publication number
WO2015013628A3
WO2015013628A3 PCT/US2014/048217 US2014048217W WO2015013628A3 WO 2015013628 A3 WO2015013628 A3 WO 2015013628A3 US 2014048217 W US2014048217 W US 2014048217W WO 2015013628 A3 WO2015013628 A3 WO 2015013628A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon carbide
buried
methods
devices
ion implant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2014/048217
Other languages
English (en)
Other versions
WO2015013628A2 (fr
Inventor
Edward Robert VAN BRUNT
Alexander V. Suvorov
Vipindas Pala
Lin Cheng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of WO2015013628A2 publication Critical patent/WO2015013628A2/fr
Publication of WO2015013628A3 publication Critical patent/WO2015013628A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/125—Shapes of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Une structure de type dispositif à semi-conducteur selon certains modes de réalisation de l'invention comprend un substrat à base de carbure de silicium présentant un premier type de conductivité, une couche de migration à base de carbure de silicium présentant le premier type de conductivité sur le substrat à base de carbure de silicium et possédant une surface supérieure faisant face au substrat à base de carbure de silicium, et une structure de type jonction noyée dans la couche de migration à base de carbure de silicium. La structure de type jonction noyée présente un second type de conductivité contraire au premier type de conductivité et une profondeur de jonction supérieure à environ un micron.
PCT/US2014/048217 2013-07-26 2014-07-25 Procédés de fabrication de dispositifs à jonctions noyées dans du carbure de silicium faisant appel à la formation d'un canal d'implantation ionique, et dispositifs à base de carbure de silicium comprenant des jonctions noyées Ceased WO2015013628A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201361858926P 2013-07-26 2013-07-26
US61/858,926 2013-07-26
US14/297,074 2014-06-05
US14/297,074 US9484413B2 (en) 2013-07-26 2014-06-05 Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions

Publications (2)

Publication Number Publication Date
WO2015013628A2 WO2015013628A2 (fr) 2015-01-29
WO2015013628A3 true WO2015013628A3 (fr) 2015-11-05

Family

ID=52389745

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/US2014/048202 Ceased WO2015013620A1 (fr) 2013-07-26 2014-07-25 Implantation d'ions régulée dans du carbure de silicium
PCT/US2014/048217 Ceased WO2015013628A2 (fr) 2013-07-26 2014-07-25 Procédés de fabrication de dispositifs à jonctions noyées dans du carbure de silicium faisant appel à la formation d'un canal d'implantation ionique, et dispositifs à base de carbure de silicium comprenant des jonctions noyées

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/US2014/048202 Ceased WO2015013620A1 (fr) 2013-07-26 2014-07-25 Implantation d'ions régulée dans du carbure de silicium

Country Status (4)

Country Link
US (4) US9768259B2 (fr)
EP (2) EP4009380A3 (fr)
JP (3) JP6391689B2 (fr)
WO (2) WO2015013620A1 (fr)

Families Citing this family (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9722017B2 (en) * 2014-01-28 2017-08-01 Mitsubishi Electric Corporation Silicon carbide semiconductor device
US20150236151A1 (en) * 2014-02-18 2015-08-20 General Electric Company Silicon carbide semiconductor devices, and methods for manufacturing thereof
US10418476B2 (en) 2014-07-02 2019-09-17 Hestia Power Inc. Silicon carbide semiconductor device
US10483389B2 (en) * 2014-07-02 2019-11-19 Hestia Power Inc. Silicon carbide semiconductor device
WO2016132987A1 (fr) * 2015-02-20 2016-08-25 住友電気工業株式会社 Dispositif à semi-conducteur en carbure de silicium
DE102015103072B4 (de) * 2015-03-03 2021-08-12 Infineon Technologies Ag Halbleitervorrichtung mit grabenstruktur einschliesslich einer gateelektrode und einer kontaktstruktur fur ein diodengebiet
JP6325743B2 (ja) * 2015-03-11 2018-05-16 株式会社日立製作所 半導体装置およびその製造方法、並びに電力変換装置
JP6479615B2 (ja) * 2015-09-14 2019-03-06 株式会社東芝 半導体装置の製造方法
US9735769B1 (en) * 2015-10-02 2017-08-15 The United States Of America As Represented By The Secretary Of The Navy Controlling current or mitigating electromagnetic or radiation interference effects using multiple and different semi-conductive channel regions generating structures
DE102015117821B4 (de) 2015-10-20 2021-09-09 Infineon Technologies Ag Verfahren zum Bilden eines Halbleiterbauelements
US10505032B2 (en) * 2015-10-30 2019-12-10 The Hong Kong University Of Science And Technology Semiconductor device with III-nitride channel region and silicon carbide drift region
JP6477912B2 (ja) * 2015-11-12 2019-03-06 三菱電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US10147813B2 (en) * 2016-03-04 2018-12-04 United Silicon Carbide, Inc. Tunneling field effect transistor
US11075264B2 (en) 2016-05-31 2021-07-27 Cree, Inc. Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods
US11430882B2 (en) 2016-06-24 2022-08-30 Wolfspeed, Inc. Gallium nitride high-electron mobility transistors with p-type layers and process for making the same
US10840334B2 (en) 2016-06-24 2020-11-17 Cree, Inc. Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
US10192980B2 (en) * 2016-06-24 2019-01-29 Cree, Inc. Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
US10892356B2 (en) 2016-06-24 2021-01-12 Cree, Inc. Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
US10354879B2 (en) * 2016-06-24 2019-07-16 Cree, Inc. Depletion mode semiconductor devices including current dependent resistance
US12484244B2 (en) 2016-06-24 2025-11-25 Wolfspeed, Inc. Group III-nitride high-electron mobility transistors with gate connected buried p-type layers and process for making the same
DE102016113129B3 (de) 2016-07-15 2017-11-09 Infineon Technologies Ag Halbleitervorrichtung, die eine Superjunction-Struktur in einem SiC-Halbleiterkörper enthält
TWI604619B (zh) 2016-09-02 2017-11-01 新唐科技股份有限公司 二極體、接面場效電晶體以及半導體元件
JP6123941B1 (ja) * 2016-10-03 2017-05-10 富士電機株式会社 縦型半導体装置およびその製造方法
US9929284B1 (en) 2016-11-11 2018-03-27 Cree, Inc. Power schottky diodes having local current spreading layers and methods of forming such devices
US10269951B2 (en) * 2017-05-16 2019-04-23 General Electric Company Semiconductor device layout and method for forming same
US10510905B2 (en) 2017-07-06 2019-12-17 Cree, Inc. Power Schottky diodes having closely-spaced deep blocking junctions in a heavily-doped drift region
JP6988216B2 (ja) 2017-07-12 2022-01-05 富士電機株式会社 半導体装置の製造方法
DE102017117999B4 (de) * 2017-08-08 2025-12-11 Infineon Technologies Ag Ionenimplantationsvorrichtung und verfahren zum herstellen vonhalbleitervorrichtungen
US10424660B2 (en) * 2017-12-21 2019-09-24 Cree, Inc. Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices
DE102018103550B4 (de) * 2018-02-16 2021-08-12 Infineon Technologies Ag Halbleitervorrichtung mit einem halbleiterkörper aus siliziumcarbid
DE102019111377B4 (de) * 2018-05-28 2025-10-09 Infineon Technologies Ag Verfahren zum Verarbeiten eines Siliziumkarbid-Wafers
JP7530157B2 (ja) * 2018-07-18 2024-08-07 住友重機械イオンテクノロジー株式会社 イオン注入方法
US11069804B2 (en) 2018-08-31 2021-07-20 Alpha And Omega Semiconductor (Cayman) Ltd. Integration of HVLDMOS with shared isolation region
US10937869B2 (en) 2018-09-28 2021-03-02 General Electric Company Systems and methods of masking during high-energy implantation when fabricating wide band gap semiconductor devices
US11056586B2 (en) 2018-09-28 2021-07-06 General Electric Company Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devices
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10867797B2 (en) 2019-02-07 2020-12-15 Cree, Inc. Methods and apparatuses related to shaping wafers fabricated by ion implantation
US11171248B2 (en) 2019-02-12 2021-11-09 Semiconductor Components Industries, Llc Schottky rectifier with surge-current ruggedness
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
DE102019114312A1 (de) * 2019-05-28 2020-12-03 Infineon Technologies Ag Siliziumcarbid-vorrichtung mit kompensationsgebiet und herstellungsverfahren
JP7570168B2 (ja) * 2019-06-14 2024-10-21 富士電機株式会社 炭化珪素半導体装置
US11579645B2 (en) 2019-06-21 2023-02-14 Wolfspeed, Inc. Device design for short-circuitry protection circuitry within transistors
US11139394B2 (en) * 2019-08-30 2021-10-05 Semiconductor Components Industries, Llc Silicon carbide field-effect transistors
DE102020004758A1 (de) * 2019-08-30 2021-03-04 Semiconductor Components Industries, Llc Siliciumcarbid-feldeffekttransistoren
CN112582461B (zh) * 2019-09-30 2024-05-10 比亚迪半导体股份有限公司 平面栅SiCMOSFET及其制造方法
CN110473872A (zh) * 2019-10-14 2019-11-19 派恩杰半导体（杭州）有限公司 一种带有多数载流子二极管的碳化硅mos器件
US11152503B1 (en) * 2019-11-05 2021-10-19 Semiq Incorporated Silicon carbide MOSFET with wave-shaped channel regions
US10950695B1 (en) * 2019-11-05 2021-03-16 Semiq Incorporated Silicon carbide planar MOSFET with wave-shaped channel regions
CN111146290B (zh) * 2019-11-29 2023-08-08 湖南国芯半导体科技有限公司 一种碳化硅vdmos器件的元胞结构及其制作方法
DE102019135490B4 (de) 2019-12-20 2025-08-28 Infineon Technologies Ag Ionenstrahl-implantationsverfahren
WO2021145484A1 (fr) * 2020-01-16 2021-07-22 엘지전자 주식회사 Dispositif de transistor à effet de champ à semi-conducteur à film d'oxyde métallique et son procédé de fabrication
US11469333B1 (en) * 2020-02-19 2022-10-11 Semiq Incorporated Counter-doped silicon carbide Schottky barrier diode
CN111326567A (zh) * 2020-03-06 2020-06-23 上海瞻芯电子科技有限公司 超级结的制造方法及其超级结肖特基二极管
WO2022047349A2 (fr) * 2020-08-31 2022-03-03 Genesic Semiconductor Inc. Conception et fabrication de dispositifs d'alimentation améliorés
US11600724B2 (en) 2020-09-24 2023-03-07 Wolfspeed, Inc. Edge termination structures for semiconductor devices
JP7550656B2 (ja) * 2021-01-06 2024-09-13 三菱電機株式会社 炭化珪素半導体装置の製造方法
IT202100002336A1 (it) * 2021-02-03 2022-08-03 St Microelectronics Srl Dispositivo elettronico a conduzione verticale comprendente un diodo jbs e relativo procedimento di fabbricazione
US20240128323A1 (en) * 2021-02-22 2024-04-18 The Research Foundation for the State Universtiy of New York Metal oxide semiconductor field effect transistors (mosfet) including deep p-wells and methods of forming same
US12557322B2 (en) 2021-05-17 2026-02-17 Wolfspeed, Inc. Group III-nitride transistors with back barrier structures and buried p-type layers and methods thereof
US11929428B2 (en) 2021-05-17 2024-03-12 Wolfspeed, Inc. Circuits and group III-nitride high-electron mobility transistors with buried p-type layers improving overload recovery and process for implementing the same
US12402346B2 (en) 2021-05-17 2025-08-26 Wolfspeed, Inc. Circuits and group III-nitride transistors with buried p-layers and controlled gate voltages and methods thereof
JP7802620B2 (ja) * 2022-03-22 2026-01-20 株式会社東芝 半導体装置の製造方法
US12469705B2 (en) 2022-04-29 2025-11-11 SCDevice LLC Vertical trench device configurations for radiation-environment applications
TWI804303B (zh) 2022-05-06 2023-06-01 國立陽明交通大學 寄生接面場效電晶體阻抗的降低方法
US12408360B2 (en) * 2022-05-13 2025-09-02 Wolfspeed, Inc. Vertical power devices having mesas and etched trenches therebetween
US20230420575A1 (en) * 2022-06-24 2023-12-28 Wolfspeed, Inc. Methods of forming uniformly doped deep implanted regions in silicon carbide and silicon carbide layers including uniformly doped implanted regions
TWI818652B (zh) * 2022-07-29 2023-10-11 鴻海精密工業股份有限公司 半導體裝置的製造方法
CN115458604B (zh) * 2022-10-24 2023-06-30 中芯越州集成电路制造(绍兴)有限公司 Mosfet器件及其制造方法
JPWO2024128239A1 (fr) * 2022-12-15 2024-06-20
DE112023004901T5 (de) * 2022-12-28 2025-09-18 Rohm Co., Ltd. Halbleiterbauelement
DE112023004902T5 (de) 2022-12-28 2025-09-11 Rohm Co., Ltd. Sic-halbleiterbauelement
KR20250143809A (ko) * 2023-02-09 2025-10-02 로무 가부시키가이샤 이온 주입 처리 시스템
KR20240136633A (ko) * 2023-03-07 2024-09-19 매그나칩 반도체 유한회사 고속 회복 다이오드 및 그 제조 방법
US20240387620A1 (en) * 2023-05-15 2024-11-21 Wolfspeed, Inc. Mosfets with implanted charge compensation regions
EP4627895A1 (fr) * 2023-08-23 2025-10-08 Scdevice LLC Dispositifs à semi-conducteurs verticaux à région de puits profond pour durcissement par rayonnement
US20250113531A1 (en) * 2023-09-28 2025-04-03 Wolfspeed, Inc. Power silicon carbide based semiconductor devices with selective jfet implants that are self-aligned with the well regions and methods of making such devices
US12610767B2 (en) 2024-03-07 2026-04-21 Wolfspeed, Inc. Additives for grinding semiconductor workpieces
US20260075904A1 (en) * 2024-09-11 2026-03-12 Wolfspeed, Inc. Power semiconductor devices including deep shielding regions
CN119403140B (zh) * 2024-10-15 2025-10-31 西安电子科技大学 沿斜面终端p沟道的改善开关特性的碳化硅浮动结结构
US12454768B1 (en) 2024-11-08 2025-10-28 Wolfspeed, Inc. Hybrid seed structure for crystal growth system
CN119673762B (zh) * 2024-11-13 2025-09-30 西安电子科技大学 一种高深宽比的碳化硅pn结结构及其制备方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5681762A (en) * 1994-11-14 1997-10-28 North Carolina State University Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein
US5895939A (en) * 1995-07-20 1999-04-20 Fuji Electric Co., Ltd. Silicon carbide field effect transistor with increased avalanche withstand capability
US6091108A (en) * 1997-11-13 2000-07-18 Abb Research Ltd. Semiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltage
US6600192B1 (en) * 1998-10-09 2003-07-29 The Kansai Electric Power Co., Inc. Vertical field-effect semiconductor device with buried gate region
US20080001159A1 (en) * 2006-06-30 2008-01-03 Kabushiki Kaisha Toshiba Semiconductor device
US20090072241A1 (en) * 2007-09-14 2009-03-19 Cree, Inc. Grid-umosfet with electric field shielding of gate oxide
US20100032685A1 (en) * 2008-08-11 2010-02-11 Qingchun Zhang Mesa termination structures for power semiconductor devices and methods of forming power semiconductor devices with mesa termination structures
US20110254016A1 (en) * 2002-12-20 2011-10-20 Cree, Inc. Vertical jfet limited silicon carbide metal-oxide semiconductor field effect transistors

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5138406A (en) 1989-04-04 1992-08-11 Eaton Corporation Ion implantation masking method and devices
US5155369A (en) 1990-09-28 1992-10-13 Applied Materials, Inc. Multiple angle implants for shallow implant
JP2875380B2 (ja) 1990-11-19 1999-03-31 三菱電機株式会社 半導体装置およびその製造方法
US6107142A (en) 1998-06-08 2000-08-22 Cree Research, Inc. Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion
JP3428459B2 (ja) 1998-09-01 2003-07-22 富士電機株式会社 炭化けい素ｎチャネルＭＯＳ半導体素子およびその製造方法
JP4447065B2 (ja) * 1999-01-11 2010-04-07 富士電機システムズ株式会社 超接合半導体素子の製造方法
WO2000075966A2 (fr) 1999-06-09 2000-12-14 International Rectifier Corporation Couche epitaxiale double pour transistors a effet de champ mos a conduction de puissance verticale
JP2001332508A (ja) 2000-05-23 2001-11-30 Matsushita Electric Ind Co Ltd 半導体素子の製造方法
JP3692063B2 (ja) * 2001-03-28 2005-09-07 株式会社東芝 半導体装置及びその製造方法
US6618418B2 (en) 2001-11-15 2003-09-09 Xerox Corporation Dual III-V nitride laser structure with reduced thermal cross-talk
JP2005340465A (ja) * 2004-05-26 2005-12-08 Fuji Electric Holdings Co Ltd 半導体装置の製造方法および半導体装置
EP1742250A1 (fr) * 2005-07-08 2007-01-10 STMicroelectronics S.r.l. Transistor de puissance à effet de champ et procédé de fabrication correspondant
JP5044117B2 (ja) 2005-12-14 2012-10-10 関西電力株式会社 炭化珪素バイポーラ型半導体装置
US20070228505A1 (en) 2006-04-04 2007-10-04 Mazzola Michael S Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of making
US7547897B2 (en) 2006-05-26 2009-06-16 Cree, Inc. High-temperature ion implantation apparatus and methods of fabricating semiconductor devices using high-temperature ion implantation
US8049272B2 (en) 2006-06-16 2011-11-01 Cree, Inc. Transistors having implanted channel layers and methods of fabricating the same
US8823057B2 (en) * 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
US7910458B2 (en) 2007-01-29 2011-03-22 Silicon Genesis Corporation Method and structure using selected implant angles using a linear accelerator process for manufacture of free standing films of materials
JP2008244456A (ja) 2007-02-28 2008-10-09 Denso Corp 炭化珪素半導体装置およびその製造方法
JP4367508B2 (ja) * 2007-03-13 2009-11-18 株式会社デンソー 炭化珪素半導体装置およびその製造方法
TW200847448A (en) 2007-05-30 2008-12-01 Intersil Inc Junction barrier schottky diode
US7772621B2 (en) 2007-09-20 2010-08-10 Infineon Technologies Austria Ag Semiconductor device with structured current spread region and method
US7989882B2 (en) 2007-12-07 2011-08-02 Cree, Inc. Transistor with A-face conductive channel and trench protecting well region
JP4935741B2 (ja) * 2008-04-02 2012-05-23 三菱電機株式会社 炭化珪素半導体装置の製造方法
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US20110198616A1 (en) 2008-10-17 2011-08-18 Kenya Yamashita Semiconductor device and method for manufacturing same
WO2010087518A1 (fr) * 2009-01-30 2010-08-05 新日本製鐵株式会社 Substrat monocristallin de carbure de silicium épitaxial et son procédé de fabrication
JP5452062B2 (ja) 2009-04-08 2014-03-26 三菱電機株式会社 炭化珪素半導体装置の製造方法
JP5300658B2 (ja) * 2009-08-26 2013-09-25 三菱電機株式会社 半導体装置及びその製造方法
WO2012056704A1 (fr) * 2010-10-29 2012-05-03 パナソニック株式会社 Elément semi-conducteur et dispositif semi-conducteur
JP5728992B2 (ja) * 2011-02-11 2015-06-03 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP5845714B2 (ja) * 2011-08-19 2016-01-20 住友電気工業株式会社 炭化珪素半導体装置の製造方法
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
JP5745997B2 (ja) 2011-10-31 2015-07-08 トヨタ自動車株式会社 スイッチング素子とその製造方法
US8969913B2 (en) * 2011-12-23 2015-03-03 Taiwan Semiconductor Maufacturing Company, Ltd. Insulated gate bipolar transistor structure having low substrate leakage
JP5684304B2 (ja) * 2013-02-27 2015-03-11 株式会社東芝 炭化珪素半導体装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5681762A (en) * 1994-11-14 1997-10-28 North Carolina State University Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein
US5895939A (en) * 1995-07-20 1999-04-20 Fuji Electric Co., Ltd. Silicon carbide field effect transistor with increased avalanche withstand capability
US6091108A (en) * 1997-11-13 2000-07-18 Abb Research Ltd. Semiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltage
US6600192B1 (en) * 1998-10-09 2003-07-29 The Kansai Electric Power Co., Inc. Vertical field-effect semiconductor device with buried gate region
US20110254016A1 (en) * 2002-12-20 2011-10-20 Cree, Inc. Vertical jfet limited silicon carbide metal-oxide semiconductor field effect transistors
US20080001159A1 (en) * 2006-06-30 2008-01-03 Kabushiki Kaisha Toshiba Semiconductor device
US20090072241A1 (en) * 2007-09-14 2009-03-19 Cree, Inc. Grid-umosfet with electric field shielding of gate oxide
US20100032685A1 (en) * 2008-08-11 2010-02-11 Qingchun Zhang Mesa termination structures for power semiconductor devices and methods of forming power semiconductor devices with mesa termination structures

Also Published As

Publication number Publication date
US10217824B2 (en) 2019-02-26
WO2015013620A1 (fr) 2015-01-29
EP3025372A1 (fr) 2016-06-01
US20170084700A1 (en) 2017-03-23
EP4009380A3 (fr) 2022-10-12
JP2018201036A (ja) 2018-12-20
US20150028350A1 (en) 2015-01-29
US9768259B2 (en) 2017-09-19
JP2022031923A (ja) 2022-02-22
US20180069083A1 (en) 2018-03-08
EP3025372B1 (fr) 2021-12-15
US9484413B2 (en) 2016-11-01
US10103230B2 (en) 2018-10-16
JP7789537B2 (ja) 2025-12-22
WO2015013628A2 (fr) 2015-01-29
JP2016530712A (ja) 2016-09-29
US20150028351A1 (en) 2015-01-29
JP6391689B2 (ja) 2018-09-19
EP4009380A2 (fr) 2022-06-08
JP7015750B2 (ja) 2022-02-03
EP3025372A4 (fr) 2017-03-08

Similar Documents

Publication Publication Date Title
WO2015013628A3 (fr) Procédés de fabrication de dispositifs à jonctions noyées dans du carbure de silicium faisant appel à la formation d'un canal d'implantation ionique, et dispositifs à base de carbure de silicium comprenant des jonctions noyées
TW201714253A (en) Method of making embedded memory device with silicon-on-insulator substrate
TW201642326A (en) Structure and formation method of semiconductor device structure
TW201612964A (en) Semiconductor device and semiconductor device manufacturing method
EP2879189A3 (fr) Cellule solaire et son procédé de fabrication
EP2846358A3 (fr) Dispositif à semi-conducteur et son procédé de fabrication
GB2529583A (en) Non-planar semiconductor device having doped sub-fin region and method to fabricate same
WO2008003041A3 (fr) Circuit et procédé de réduction de temps de récupération inverse de diode de substrat de dispositifs à semi-conduction de puissance latérale
EP2755237A3 (fr) Dispositif semi-conducteur à grille MOS dans une tranchée et méthode de fabrication
WO2014172159A8 (fr) Jonction p-n défectueuse pour transistor mosfet silicium sur isolant entièrement déserté à grille arrière
SG10201900070UA (en) Semiconductor device and method of forming double-sidedfan-out wafer level package
EP4421886A3 (fr) Procédé de fabrication d'une cellule solaire
MY192488A (en) Solar cell emitter region fabrication using ion implantation
MY188387A (en) Non-planar semiconductor device having omega-fin with doped sub-fin region and method to fabricate same
TW201614840A (en) Semiconductor device and method for fabricating the same
SG10201900450PA (en) Structure for radio-frequency applications
WO2018035229A3 (fr) Tranchées profondes doubles pour isolation haute tension
WO2015130549A3 (fr) Formation de couche d'arrêt conductrice sélective
GB2533063A (en) Structures and methods with reduced sensitivity to surface charge
SG11201907932UA (en) Semiconductor memory device
MY192045A (en) Solar cell with trench-free emitter regions
GB2510525A (en) Rare-earth oxide isolated semiconductor fin
GB2529953A (en) Nanostructures and nanofeatures with Si (111) planes on Si (100) wafers for III-N epitaxy
TW201613094A (en) Structure of fin feature and method of making same
EP2802018A3 (fr) Dispositif détecteur infrarouge à barrière de diode et structures de barrière à super-réseau

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14830303

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14830303

Country of ref document: EP

Kind code of ref document: A2