WO2015016399A1 - Photo-électrode de pile solaire à pigment photosensible comprenant un film semi-conducteur en ba-sn-m-o - Google Patents

Photo-électrode de pile solaire à pigment photosensible comprenant un film semi-conducteur en ba-sn-m-o Download PDF

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Publication number
WO2015016399A1
WO2015016399A1 PCT/KR2013/006811 KR2013006811W WO2015016399A1 WO 2015016399 A1 WO2015016399 A1 WO 2015016399A1 KR 2013006811 W KR2013006811 W KR 2013006811W WO 2015016399 A1 WO2015016399 A1 WO 2015016399A1
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basno
solar cell
dye
sensitized solar
semiconductor film
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English (en)
Korean (ko)
Inventor
홍국선
신성식
석재호
김동회
김주성
박익재
이찬우
성원모
조인선
김동욱
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SNU R&DB Foundation
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

Definitions

  • the present invention relates to a photoelectrode for a dye-sensitized solar cell, and more particularly to a photoelectrode of a dye-sensitized solar cell including a Ba—Sn—M—O-based oxide semiconductor film.
  • the dye-sensitized solar cell when the sunlight is absorbed by the semiconductor oxide electrode where the dye molecules are chemically adsorbed on the surface, the dye molecules emit electrons. The electrons are transferred to the transparent conductive substrate through various paths to finally generate current.
  • the manufacturing process is simpler than the conventional silicon solar cell, the stability is very high, and compared with the silicon-based solar cell has the advantage of being less affected by the amount of sunlight.
  • the cathode of the dye-sensitized solar cell is composed of an oxide semiconductor film composed of a transparent conductive film formed on a glass substrate and oxide semiconductor nanoparticles such as TiO 2 .
  • a dye polymer is provided by a method such as adsorption.
  • a positive electrode (counter electrode or counter electrode) of the dye-sensitized solar cell a material such as platinum is generally used and provided on a glass substrate. An electrolyte is provided between the negative electrode and the counter electrode.
  • the general principle of dye-sensitized solar cell is as follows. Sunlight enters the cell to excite the dye polymer to form an electron-hole pair, and the generated electrons are injected into the conduction band of the semiconductor oxide. The injected electrons are transferred to the outside through the semiconductor oxide. The electrons that transfer electric energy to the outside are combined with the holes of the dye polymer by the oxidation / reduction reaction of the electrolyte at the counter electrode.
  • an object of the present invention is to provide a novel multi-component oxide semiconductor film based on Ba—Sn—O that can replace the conventional TiO 2 film.
  • an object of the present invention is to provide a novel Ba-Sn-O-based multi-component oxide semiconductor film with improved photoelectric energy conversion efficiency of the dye-sensitized solar cell compared to the prior art.
  • the present invention to achieve the above technical problem is a conductive transparent substrate; And it provides a dye-sensitized solar cell photoelectrode comprising a multi-component oxide semiconductor film represented by the following formula formed on the substrate.
  • BaSnO 3 M where M is doped with BaSnO 3 , Sr, Ca, Mg, Zn, Pb, Ti, Mn, Sb, K, In, Zr, Te, Fe, Y, Sm, Sc, Co, La And at least one metal of the metal element consisting of Rh)
  • M may be Sr, Ca, and Mg, and may substitute at least a part of Ba sites in the crystal structure of BaSnO 3 .
  • M is Sb, and may replace at least a part of the Sn site in the crystal structure of BaSnO 3 .
  • M may be a metal that raises the conduction band in the band structure of BaSnO 3 .
  • M may be a metal that increases the electron concentration or hole concentration of BaSnO 3 .
  • M is at least one element selected from the group consisting of Mg, Zn, Pb, Ti, Mn, K, In, Zr, Te, Fe, Y, Sm, Sc and Rh, the content of the BaSnO 3 It may be included in 0.01 to 5 at% compared to Ba or Sn.
  • the M is at least one element selected from the group consisting of Mg, Zn, Pb, Ti, Mn, K, In, Zr, Te, Fe, Y, Sm, Sc and Rh, the content is BaSnO 3 It may be included in 0.01 to 1 at% of Ba or Sn.
  • the present invention provides a dye-sensitized solar cell electrode characterized in that the dye is adsorbed on the multi-component oxide semiconductor film.
  • the present invention to achieve the above technical problem is a conductive transparent substrate; And it provides a dye-sensitized solar cell photoelectrode comprising a multi-component oxide semiconductor film represented by the following formula formed on the substrate.
  • the present invention to achieve the above technical problem, a conductive transparent substrate; And it provides a dye-sensitized solar cell photoelectrode comprising a multi-component oxide semiconductor film represented by the following formula formed on the substrate.
  • M is Ca, Mg, Zn, Pb, Ti, Mn, Sb, K, In, Zr, Te, Fe, Y, Sm, Sc and Rh At least one metal selected from the group consisting of 0.05 ⁇ x ⁇ 0.5)
  • M is at least one element selected from the group consisting of Mg, Zn, Pb, Ti, Mn, K, In, Zr, Te, Fe, Y, Sm, Sc, and Rh, the content of which is BaSnO 3 It may be included in 0.01 to 5 at% of Ba or Sn.
  • the M is at least one element selected from the group consisting of Mg, Zn, Pb, Ti, Mn, K, In, Zr, Te, Fe, Y, Sm, Sc and Rh, the content is BaSnO 3 It may be included in 0.01 to 1 at% of Ba or Sn.
  • the present invention provides a dye-sensitized solar cell electrode characterized in that the dye is adsorbed on the multi-component oxide semiconductor film.
  • the photoelectric energy conversion efficiency of the BaSnO 3 semiconductor oxide film can be improved to provide a photoelectrode capable of manufacturing a high efficiency solar cell.
  • FIG. 1 is a graph illustrating an X-ray diffraction pattern of Sr-doped BaSnO 3 powder according to a preferred embodiment of the present invention.
  • FIG. 2 is an enlarged graph of the diffraction pattern of FIG. 1.
  • FIG. 6 is a graph showing the results of measuring the characteristics of the solar cell according to a preferred embodiment of the present invention.
  • FIG. 7 is a graph showing the characteristics of the solar cell synthesized according to another embodiment of the present invention.
  • FIG. 8 is a graph illustrating a result of measuring characteristics of a solar cell according to another embodiment.
  • FIG. 9 is a graph showing the results of measuring the characteristics of the solar cell according to another embodiment.
  • the present invention provides a photoelectrode comprising a multi-component oxide semiconductor represented by the following formula (1).
  • BaSnO 3 M where M is doped with BaSnO 3 , Sr, Ca, Mg, Zn, Pb, Ti, Mn, Sb, K, In, Zr, Te, Fe, Y, Sm, Sc, Co, La And at least one metal of the metal element consisting of Rh)
  • the metal element M of Chemical Formula 1 may substitute for Ba or Sn.
  • the doped metal elements change the band structure while maintaining the crystal structure of BaSnO 3 . More specifically, the doped metal elements raise the conduction band in the band structure of BaSnO 3, thereby improving cell characteristics of the solar cell.
  • Sr, Ca, and Mg may improve the conduction band by substituting Ba sites
  • Sb may improve the conduction band by substituting Sn sites.
  • the doped metal elements may improve cell characteristics of the solar cell by other mechanisms. That is, the doped metal element increases the electron concentration and hole concentration in the film, thereby improving the cell characteristics of the solar cell.
  • doped Zn, Pb, Ti, Mn, Sb, In, Zr, Te, Fe, Y, Sm, Sc, La, and Rh can improve solar cell characteristics as the main mechanism for increasing electron concentration.
  • doped Co and K may improve solar cell characteristics as the main mechanism for increasing hole concentration.
  • the cell characteristic enhancement mechanism by the doping elements may work at the same time.
  • the resulting composition of the semiconductor oxide film of the photoelectrode may be represented by the following Chemical Formula 2.
  • Chemical Formula 2 may be generally represented by the following Chemical Formula 3.
  • M1 is at least one element selected from the group consisting of Sr, Ca, and Mg
  • another metal element can replace the Sn site in the BaSnO3 crystal structure, and at this time, the band structure change as described above occurs.
  • Sb may be selected as a doping element to function as M2.
  • the metal element doped in the present invention may not be substituted for Ba or Sn sites, but may invade into the crystal structure.
  • the above-described dopable metal elements may be doped at least one kind.
  • SnCl 4 -5H 2 O, BaCl 2 -2H 2 O, and Sr (NO 3 ) 2 were used as raw material powders.
  • Each raw material powder was weighed and mixed so that the molar ratio of Sr: (Ba + Sr) changed in the range of 0 to 0.5, while maintaining the molar ratio of (Ba + Sr): Sn in a composition of 1: 1.
  • the mixed powder was dissolved in 30% hydrogen peroxide water (70:30 volume ratio of water and hydrogen peroxide), ammonia water was added to the mixed solution so that the pH was 9-11, and precipitated and aged for 12 hours. Subsequently, the precipitate obtained was washed and then lyophilized, and the dried powder was annealed at a temperature of 900 ° C. for about 2 hours to synthesize BaSnO 3 : Sr powder.
  • FIG. 1 is a graph illustrating an X-ray diffraction pattern of Sr-doped BaSnO 3 powder according to a preferred embodiment of the present invention.
  • FIG. 2 is an enlarged graph of the diffraction pattern of FIG. 1. Referring to the figure, it can be seen that the shift to the right side of the diffraction peak group near 30.5 degrees according to the amount of Ba added. It can be seen that the added Sr solidifies in the BaSnO 3 lattice structure without forming a secondary phase, thereby forming (Ba, Sr) SnO 3 .
  • FIG. 3 is a result of measuring UV absorption of the synthesized powder
  • FIG. 4 is a graph showing a Mott Schottky Analysis result.
  • UV absorption was measured by scanning in the 250-600 nm region with LAMBDA650 (Perkinelmer), and Mort Schottky measured 3 of the working electrode, counter electrode and reference electrode in 1M KCl electrolyte (pH 7) with Potentiostat (CHI 608C, CH Instrument). Measurement was made using an electrode system.
  • the band gap increases with the doping of Sr.
  • the conduction band rises according to the doping of Sr from FIG. 4, that is, the increase of the band gap is due to the rise of the conduction band.
  • Sr doping may change the band structure of BaSnO 3 to increase the characteristics of the solar cell, such as Voc and FF.
  • FIG. 5 is an electron micrograph of a Sr-doped BaSnO 3 powder. It can be seen from FIG. 3 that there is little change in shape or size of the powder particles with the addition of Sr. Therefore, it can be seen that the effect of the shape and size of the powder on the characteristics such as cell efficiency due to doping can be ignored.
  • BaSnO 3 Ca powder was synthesized under the same conditions as Preparation Example 1 except that the Sr source of Preparation Example 1 was replaced with Ca (NO 3 ) 2 -4H 2 O.
  • BaCO 3 , SnO 2 and MgCO 3 were used as raw powders.
  • the composition powders were weighed and mixed so that the molar ratio of Mg: (Ba + Mg) varied from 0 to 0.05 while the molar ratio of (Ba + Mg): Sn was maintained at 1: 1. .
  • the mixed powder and dispersant (polycarboxylic acid, MALIALIM AFB-1521) were mixed by ball milling in an ethanol solvent for 12 hours. The mixed slurry was dried and heat-treated for 2 hours in an air atmosphere of 1100 degrees to synthesize BaSnO 3 : Mg powder.
  • the synthesized BaSnO 3 : Mg powder showed the cubic form of the primary particles at low doping concentration (molar ratio of Mg to Ba + Mg), but the shape of the primary particles was increased as the doping concentration was increased. As it disappeared, the formation of coarse particles due to aggregation became prominent.
  • BaSnO 3 Ca powder was synthesized under the same conditions as in Preparation Example 4, except that MgCO 3 was replaced with CaCO 3 as a raw material powder.
  • BaSnO 3 Sr powder was synthesized under the same conditions as in Preparation Example 4, except that MgCO 3 was replaced with SrCO 3 as a raw material powder.
  • BaSnO 3 Zn powder was synthesized under the same conditions as in Preparation Example 4, except that MgCO 3 was replaced with ZnO as the starting powder.
  • the synthesized BaSnO 3 : Zn powder was confirmed that the shape of the primary particles changes as the doping concentration of Zn (molar ratio of Zn to Ba + Zn) increases.
  • BaCO 3 , SnO 2 and Sb 2 O 3 were used as raw material powders. At this time, the composition of the mixed powder was weighed and mixed so that the molar ratio of Sb: (Sn + Sb) varied from 0 to 0.05 while the molar ratio of Ba: (Sn + Sb) was 1: 1. . Milling, drying and heat treatment conditions were carried out under the same conditions as in Preparation Example 4 to synthesize BaSnO 3: Sb powder.
  • BaSnO 3 Sr powder prepared by Preparation Example 1 was mixed with a solution of organic terpineol and ethyl cellulose to form a paste, and the formed paste was applied onto the FTO substrate by screen printing. It was.
  • the BaSnO 3 Sr film is formed by heat treatment at 500 ° C. for 1 hour to remove the organic material of the film thus formed. The thickness of the formed film was about 10-15 micrometers.
  • the prepared film was subjected to dye (ruthenium-based N719 dye (cis-diisothiocyanato-bis (2,2-bipyridyl-4,4-dicarboxylato) ruthenium (II) bis ( The dye was adsorbed by dipping for a predetermined time in tetrabutylammonium) solution dissolved in ethanol at a concentration of 0.05 nM.
  • dye ruthenium-based N719 dye (cis-diisothiocyanato-bis (2,2-bipyridyl-4,4-dicarboxylato)
  • the dye was adsorbed by dipping for a predetermined time in tetrabutylammonium) solution dissolved in ethanol at a concentration of 0.05 nM.
  • a BaSnO 3 : Ca film was formed in the same manner as in Example 1 except that BaSnO 3 : Ca powder prepared in Preparation Example 2 was used, and the dye was adsorbed.
  • a BaSnO 3 : Mg film was formed in the same manner as in Example 1 except that BaSnO 3 : Mg powder prepared in Preparation Example 3 was used, and the dye was adsorbed.
  • a BaSnO 3 : Ca film was formed in the same manner as in Example 1 except that BaSnO 3 : Ca powder prepared in Preparation Example 4 was used, and the dye was adsorbed.
  • a BaSnO 3 : Sr film was formed in the same manner as in Example 1 except that BaSnO 3 : Sr powder prepared in Preparation Example 5 was used, and the dye was adsorbed.
  • a BaSnO 3 : Zn film was formed in the same manner as in Example 1 except that BaSnO 3 : Zn powder prepared in Preparation Example 6 was used, and the dye was adsorbed.
  • a BaSnO 3 : Sb film was formed in the same manner as in Example 1 except that BaSnO 3 : Sb powder prepared in Preparation Example 7 was used, and the dye was adsorbed.
  • the dye-sensitized solar cell was produced using the FTO board
  • the anode (relative electrode or counter electrode) of the dye-sensitized solar cell was formed by using Pt formed on the glass substrate by sputtering method, and the counter electrode and the working electrode on which the BaSnO 3 film was formed were sandwiched. After the cell was prepared by packing, it was injected into the packed cell using an iodine-based electrolyte.
  • I-V characteristics of the fabricated dye-sensitized solar cell were measured to determine current density (Jsc), Voc, fill factor (FF), and battery efficiency.
  • FIG. 6 is a graph showing the results of measuring the characteristics of the solar cell measured by using the Sr-doped photoelectrode of Example 1 as the working electrode.
  • Table 1 is a table comparing the characteristics of the solar cell (Sr20) consisting of a photoelectrode doped with 20% Sr and the solar cells (Bare1, Bare2) consisting of an undoped photoelectrode.
  • the efficiency of the cell doped with 20% Sr is about 26% increase compared to the undoped cell.
  • the efficiency of the solar cell is influenced by other factors such as the manufacturing method of the powder, the configuration of the cell, etc.
  • the present embodiment shows a case of synthesis by the solid-phase synthesis method, the absolute value of the efficiency is low.
  • the photoelectrode fabricated according to the present invention exhibits very high efficiency as compared to the undoped BaSnO 3 photoelectrode cell prepared under the same conditions.
  • FIG. 7 is a graph showing the characteristics of the solar cell measured by increasing the film thickness to 35 ⁇ 40 micrometers compared to Example 1. As can be seen in Figure 7, it can be seen that the efficiency increased with the increase of the film thickness.
  • Example 8 is a graph showing the results of measuring the characteristics of the solar cell measured by using the Ca-doped photoelectrode of Example 2 as the working electrode.
  • Jsc increases up to a small amount of Ca, such as Ca, from 2 to 3%.
  • Table 2 is a table showing the results of measuring the characteristics of the solar cell measured by using the photoelectrode prepared in Examples 3 to 6 as the working electrode. For comparison, the results of the measurement of the characteristics of a cell (bar) of an undoped photoelectrode are shown.
  • Examples 3 to 6 are used by the powder produced by the solid-phase method, showing a relatively low efficiency compared to the powder produced by the liquid phase method.
  • the phenomenon of an increase in current density also occurs by addition of Sb.
  • the doped Sb may be understood to improve cell characteristics by a mechanism of replacing a portion of Sn sites in BaSnO3 and changing band characteristics. have.
  • the improvement of cell characteristics due to the addition of Sb may be due to other mechanisms, namely, an increase in electron concentration or hole concentration.

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Abstract

La présente invention concerne une photo-électrode qui comprend un nouveau film semi-conducteur à oxyde multiconstituant à base de Ba-Sn-O. La présente invention concerne une photo-électrode de pile solaire à pigment photosensible qui comprend : un substrat transparent conducteur; et un film semi-conducteur à oxyde multiconstituant formé sur le substrat. Une composition du film semi-conducteur peut être représentée par BaSnO3 : M (ici, M est un métal dopé dans BaSnO3 et comprenant au moins un élément métallique choisi parmi Sr, Ca, Mg, Zn, Pb, Ti, Mn, Sb, K, In, Zr, Te, Fe, Y, Sm, Sc, Co, La et Rh). Selon la présente invention, il est possible d'utiliser une photo-électrode avec laquelle une pile solaire très efficace peut être fabriquée, par l'amélioration d'une efficacité de conversion énergétique photoélectrique d'un film à oxyde semi-conducteur en BaSnO3.
PCT/KR2013/006811 2013-07-29 2013-07-30 Photo-électrode de pile solaire à pigment photosensible comprenant un film semi-conducteur en ba-sn-m-o Ceased WO2015016399A1 (fr)

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KR101804173B1 (ko) 2016-04-04 2017-12-05 한국화학연구원 BaSnO3 박막 및 이의 저온 제조 방법
US20180148643A1 (en) * 2015-08-04 2018-05-31 Ngk Insulators, Ltd. Fine fluorescent-material particles, process for producing fine fluorescent-material particles, thin fluorescent-material film, wavelength conversion film, wavelength conversion device, and solar cell
KR101912735B1 (ko) 2017-11-06 2018-10-30 한국화학연구원 BaSnO3 박막 및 이의 저온 제조 방법
CN110446761A (zh) * 2017-03-20 2019-11-12 锡克拜控股有限公司 光致发光铁掺杂的锡酸钡材料、安全墨组合物及其安全特征
CN113066858A (zh) * 2021-05-07 2021-07-02 深圳戴尔蒙德科技有限公司 一种高性能BaSnO3基透明导电薄膜和薄膜晶体管及其制备技术

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KR20190076844A (ko) 2017-12-22 2019-07-02 주식회사 엘지화학 투명 전도성막의 제조방법

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US20070079870A1 (en) * 2005-10-12 2007-04-12 Board Of Regents, The University Of Texas System Photoelectrochemical cell with bipolar dye-sensitized electrodes for electron transfer
US20100288340A1 (en) * 2007-10-09 2010-11-18 Kyung Hee Park Photoelectode of dye-sensitized solar cell containing glass powder
US20120160326A1 (en) * 2010-12-24 2012-06-28 Samsung Sdi Co., Ltd. Photoelectrode for dye sensitized solar cell, solar cell including photoelectrode, and method of manufacturing the photelectrode
WO2012157773A1 (fr) * 2011-05-18 2012-11-22 ソニー株式会社 Cellule solaire à colorant et photoélectrode pour cellules solaires à colorant
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180148643A1 (en) * 2015-08-04 2018-05-31 Ngk Insulators, Ltd. Fine fluorescent-material particles, process for producing fine fluorescent-material particles, thin fluorescent-material film, wavelength conversion film, wavelength conversion device, and solar cell
US10934483B2 (en) * 2015-08-04 2021-03-02 Ngk Insulators, Ltd. Fine fluorescent-material particles, process for producing fine fluorescent-material particles, thin fluorescent-material film, wavelength conversion film, wavelength conversion device, and solar cell
KR101804173B1 (ko) 2016-04-04 2017-12-05 한국화학연구원 BaSnO3 박막 및 이의 저온 제조 방법
CN110446761A (zh) * 2017-03-20 2019-11-12 锡克拜控股有限公司 光致发光铁掺杂的锡酸钡材料、安全墨组合物及其安全特征
CN110446761B (zh) * 2017-03-20 2021-03-26 锡克拜控股有限公司 光致发光铁掺杂的锡酸钡材料、安全墨组合物及其安全特征
US11352517B2 (en) 2017-03-20 2022-06-07 Sicpa Holding Sa Photoluminescent iron-doped barium stannate material, security ink composition and security feature thereof
KR101912735B1 (ko) 2017-11-06 2018-10-30 한국화학연구원 BaSnO3 박막 및 이의 저온 제조 방법
CN113066858A (zh) * 2021-05-07 2021-07-02 深圳戴尔蒙德科技有限公司 一种高性能BaSnO3基透明导电薄膜和薄膜晶体管及其制备技术

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