WO2015043169A1 - 柔性显示基板及其制备方法、柔性显示装置 - Google Patents

柔性显示基板及其制备方法、柔性显示装置 Download PDF

Info

Publication number
WO2015043169A1
WO2015043169A1 PCT/CN2014/075811 CN2014075811W WO2015043169A1 WO 2015043169 A1 WO2015043169 A1 WO 2015043169A1 CN 2014075811 W CN2014075811 W CN 2014075811W WO 2015043169 A1 WO2015043169 A1 WO 2015043169A1
Authority
WO
WIPO (PCT)
Prior art keywords
flexible
layer
display
flexible display
light reflecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2014/075811
Other languages
English (en)
French (fr)
Inventor
陈立强
高涛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to US14/913,069 priority Critical patent/US20160197293A1/en
Priority to EP14849872.8A priority patent/EP3051601B1/en
Publication of WO2015043169A1 publication Critical patent/WO2015043169A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6542—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by using coherent radiation, e.g. using a laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention belongs to the field of flexible display technologies, and in particular relates to a flexible display substrate, a preparation method thereof and a flexible display device. Background technique
  • the substrate of the display substrate of the flexible display device (such as the flexible array substrate of the flexible organic light emitting diode display device) must be a flexible substrate, and the flexible substrate is mainly composed of polyimide, polyethylene terephthalate or the like. Made of materials.
  • the flexible material layer 2 is usually formed on the glass substrate 1, and then the buffer layer 4 and the display structure 9 are sequentially formed on the flexible material layer 2 (displayed by a flexible organic light emitting diode)
  • the device is exemplified by a thin film transistor, a data line, a gate line, a capacitor, an anode, a cathode, an organic light-emitting layer, a pixel defining layer, etc., since these are known structures, so the figure is not labeled), and then the ultraviolet laser is used from the glass.
  • the flexible material layer 2 is irradiated on the side of the substrate 1 to reduce the adhesion between the flexible material layer 2 and the glass substrate 1 and separate from the glass substrate 1 (ie, laser peeling) to form an independent flexible display substrate (at this time, the flexible material layer 2 becomes Flexible substrate 21).
  • the flexible array substrate includes a plurality of display units arranged in an array, the display units generally including thin film transistors, and low temperature polysilicon (LTPS) thin film transistors are an important type of thin film transistors, and the active region 911 is made of polysilicon.
  • the active region 911 is prepared by first forming an amorphous silicon layer, and then irradiating the amorphous silicon layer from the side away from the glass substrate 1 by an ultraviolet laser (excimer laser) through excimer laser annealing (ELA). The amorphous silicon is melted, nucleated, grown to be converted into polycrystalline silicon, and then the active region 911 is formed using a polysilicon layer.
  • a portion of the laser may be irradiated onto the display structure through the layer of flexible material, thereby affecting the performance of the display structure; for example, if the laser is irradiated to a thin film transistor (especially a metal oxide thin film transistor) On the active area, it will cause a wide voltage drift and other defects.
  • a thin film transistor especially a metal oxide thin film transistor
  • a laser may be irradiated through the amorphous silicon layer onto the flexible material layer during laser annealing, thereby causing damage to the performance of the flexible material layer, for example, causing carbonization of the flexible material layer or Separate from adjacent layers (such as buffer layers).
  • the technical problem to be solved by the present invention includes a problem that the display structure in the existing flexible display substrate is easily damaged during laser stripping, and a flexible display substrate capable of avoiding damage of the display structure during laser stripping and preparation thereof Method, flexible display device.
  • a technical solution adopted to solve the technical problem of the present invention is a flexible display substrate comprising a flexible substrate and a display structure, and
  • the display structure refers to all structures for display above the reflective layer.
  • the display structure may include: a thin film transistor, a gate line, a gate insulating layer, a data line, and a planarization.
  • the light reflecting layer is a metal light reflecting layer; and a buffer layer is further disposed between the light reflecting layer and the display structure.
  • the metal light reflecting layer is made of aluminum.
  • the metal light reflecting layer has a thickness of between 150 nm and 300 nm.
  • the light reflecting layer is provided with an opening at a position corresponding to the alignment mark.
  • the flexible substrate is made of an organic flexible material.
  • the display structure is a plurality of display units arranged in an array; and the display unit comprises a low temperature polysilicon thin film transistor.
  • the display structure is a plurality of display units arranged in an array; and the display unit is a top emission type organic light emitting diode display unit.
  • the technical solution adopted to solve the technical problem of the present invention is a flexible display device comprising the above-described flexible display substrate.
  • the technical solution adopted to solve the technical problem of the present invention is a method for preparing a flexible display substrate, which comprises:
  • the flexible material layer is separated from the substrate by laser lift-off to obtain a flexible display substrate.
  • the light reflecting layer is a metal light reflecting layer; and between the step of forming the metal light reflecting layer and the step of forming the display structure, further comprising: forming a buffer layer on the metal light reflecting layer.
  • the metal reflective layer is made of aluminum and formed by a vacuum evaporation process; the parameters of the vacuum evaporation process are: an evaporation rate of 40 nm/s or more, and an evaporation pressure of 1.3 x 10 4 Pa, the evaporation thickness is between 150 nm and 300 nm.
  • the method further comprises: forming an opening on the light reflecting layer at a position corresponding to the alignment mark.
  • the display structure is a plurality of display units arranged in an array, the display unit comprises a low temperature polysilicon thin film transistor; the step of forming the display structure comprises: forming an amorphous silicon layer; and The crystalline silicon layer is transformed into a polycrystalline layer.
  • a reflective layer is disposed between the flexible substrate (flexible material layer) and the display structure. Therefore, when the laser is peeled off, the reflective layer can pass through the flexible material layer. The laser is reflected back to avoid exposure to a display structure including a thin film transistor, thereby preventing damage to the display structure.
  • the reflective layer is preferably a metal material, and the metal material tends to have good water and oxygen barrier properties, so that it can prevent moisture, oxygen, etc. from coming into contact with the display structure, and protect the (similar to the package) display structure.
  • the reflective layer can also reflect the laser light passing through the amorphous silicon layer during laser annealing, thereby preventing the flexible material layer from being damaged.
  • the present invention is applicable to flexible display devices, particularly flexible top emission type organic light emitting diode display devices, and flexible array substrates with low temperature polysilicon thin film transistors.
  • FIG. 1 is a schematic cross-sectional structural view of a conventional flexible display substrate
  • FIG. 2 is a schematic cross-sectional structural view of a conventional flexible display substrate during laser stripping in a preparation process
  • FIG. 3 is a cross-sectional structural view of a flexible display substrate according to Embodiment 1 of the present invention.
  • Figure 4 is a graph of absorption and reflectance spectra of aluminum
  • FIG. 5 is a schematic top plan view showing a flexible display substrate according to Embodiment 1 of the present invention after an alignment opening is formed on a reflective layer in a preparation process;
  • FIG. 6 is a schematic cross-sectional view showing a flexible display substrate according to Embodiment 1 of the present invention when laser annealing is performed in a preparation process;
  • FIG. 7 is a cross-sectional structural view showing a flexible display substrate according to Embodiment 1 of the present invention when laser stripping is performed in a preparation process;
  • reference numerals are: 1. Glass substrate; 2. Flexible material layer; 21. Flexible 3; reflective layer; 31, opening; 4, buffer layer; 8, alignment mark; 9, display structure; 91, amorphous silicon layer; 911, active area. detailed description
  • the embodiment provides a flexible display substrate, which includes:
  • a display structure 9 is disposed above the light reflecting layer 3.
  • display structure 9 refers to all structures formed above the light reflecting layer 3 for display.
  • the display structure 9 may include: a thin film transistor, a gate line, a gate insulating layer, a data line, a planarization layer (PLN), a passivation layer (PVX), a capacitor, an anode, a cathode, an organic light emitting layer, depending on the type of the flexible display substrate. , a pixel defining layer (PDL), a color filter film, and the like.
  • the light-reflecting layer 3 is provided between the flexible substrate 21 and the display structure 9. Therefore, as shown in FIG. 7, the light-reflecting layer 3 can pass the laser light passing through the flexible material layer 2 during laser peeling. It is reflected back to prevent it from being irradiated to the display structure 9 including a thin film transistor or the like, thereby preventing the performance of the display structure 9 from being affected.
  • the metal reflective layer tends to have better water and oxygen barrier properties, thereby preventing moisture, oxygen and the like from coming into contact with the display structure 9, thereby protecting the display structure 9.
  • the present embodiment uses an array substrate of a flexible top emission type organic light emitting diode display device as an example of a flexible display substrate, that is, the display structure in the flexible display substrate includes a plurality of display units arranged in an array, and the display unit is
  • a top emission type organic light emitting diode display unit includes a driving circuit (switching thin film transistor, driving thin film transistor, capacitor, etc.), a gate line, a data line, a cathode, an anode, an organic light emitting layer, a pixel defining layer, and the like, and is away from One side of the flexible substrate 21 emits light. As shown in FIG.
  • the light-reflecting layer 3 can reflect the light emitted from the organic light-emitting layer and emitted toward the flexible substrate 21, thereby improving the light-emitting efficiency of the flexible display substrate.
  • the flexible display substrate is preferably a flexible array substrate,
  • the flexible array substrate includes a plurality of display units arranged in an array, each of which typically includes a thin film transistor, and the active region 911 of the thin film transistor (especially a metal oxide thin film transistor) is most easily in the laser stripping process.
  • the affected display structure 9, the reflective layer 3 can provide maximum protection for the array substrate.
  • a low temperature polysilicon thin film transistor i.e., the active region 911 of the thin film transistor is composed of a low temperature polysilicon material.
  • the polysilicon active region 911 is formed by first forming an amorphous silicon layer 91 and then laser annealing to convert the amorphous silicon layer 91 into a polysilicon layer; during the laser annealing process, there may be a portion The laser light passes through the amorphous silicon layer 91 to cause damage to the flexible substrate 21; at this time, the light reflecting layer 3 can also reflect these laser light back to prevent the flexible substrate 21 from being damaged in laser annealing.
  • the thin film transistor in the flexible display substrate of the present invention is also not limited to the low temperature polysilicon thin film transistor.
  • the flexible substrate 21 is made of an organic flexible material; more preferably made of polyimide or polyethylene terephthalate, because of the flexible substrate 21 technology made of an organic flexible material. Mature, more commonly used.
  • the present invention is particularly applicable to a flexible substrate 21 made of an organic flexible material because the organic flexible material is more susceptible to laser damage.
  • an inorganic material such as stainless steel as the flexible substrate 21.
  • the light reflecting layer 3 is a metal light reflecting layer
  • a buffer layer 4 is further disposed between the display structure 9 and the light reflecting layer 3.
  • Metal is the most common light-reflecting material, has a low cost, is not easily damaged by laser light, and has a mature process for forming a film by vapor deposition or the like. Therefore, it is preferable to form the light-reflecting layer 3 from a metal material.
  • the metal material is electrically conductive, when the reflective layer 3 is prepared therefrom, the buffer layer 4 needs to be formed thereon, so that the metal reflective layer will not include the active region 911, the gate line, The display structure 9 of the data line or the like is directly turned on.
  • the buffer layer 4 may be made of a known inorganic material such as silicon nitride (SiNx) or silicon oxide (SiO 2 ), and the thickness is preferably 250-400 nm.
  • the buffer layer 4 can also function in addition to insulation. The surface roughness is lowered, the bonding of the display structure 9 to the flexible substrate 21 is improved, and the like; since the buffer layer 4 is also present in the conventional display substrate, it will not be described in detail herein.
  • the light reflecting layer 3 may also be made of other non-conductive materials (such as a light reflecting layer made of a polymer material), and the buffer layer 4 may not be provided at this time.
  • the metallic light reflecting layer is made of aluminum.
  • the ultraviolet laser with a wavelength of 308 nm is usually used.
  • aluminum has a high reflectance to the light in the ultraviolet wavelength range (the reflection/absorption curve is as shown in the figure). 4)), therefore it is preferred to prepare the light reflecting layer 3 from aluminum.
  • the aluminum material has a high reflectance (corresponding to the left reflectance coordinate) and an absorptivity (corresponding to the right absorbance coordinate) in the ultraviolet wavelength range (4 to 380 nm), so that it can be maximized. Prevents UV transmission.
  • rhodium also has a high ultraviolet reflectance; and if conventional copper or silver is used, Metals (which have relatively low UV reflectance) are also feasible.
  • the metal light reflecting layer (exemplified by the aluminum light reflecting layer) has a thickness of 150 to 300 nm.
  • the light reflecting layer 3 is provided with an opening 31 at a position corresponding to the alignment mark 8.
  • the steps of patterning process, IC bonding process and the like need to be accurately aligned.
  • the usual alignment method is to set the alignment mark 8 in the base supporting the glass substrate 1, through flexibility. Material layer 2, etc. (due to these The layers are all transparent.
  • the alignment mark 8 can be seen to perform alignment.
  • the light reflecting layer 3 is opaque and blocks the alignment mark 8 from being invisible. Therefore, it is necessary to provide the opening 31 at a position corresponding to the alignment mark 8 in the light reflecting layer 3.
  • the embodiment also provides a flexible display device comprising the above flexible display substrate.
  • the flexible display device of the present embodiment may include other structures such as a package substrate in addition to the flexible display substrate described above, and is preferably a flexible top emission type organic light emitting diode display device. Of course, other types of flexible display devices are also possible.
  • the embodiment further provides a method for preparing the above flexible display substrate, which comprises the following steps:
  • the substrate may be a conventional hard substrate such as a glass substrate 1.
  • the layer of flexible material 2 is preferably a layer of organic flexible material 2, such as a layer made of polyimide or polyethylene terephthalate.
  • the flexible material layer 2 can be produced by a conventional method such as coating, and in the subsequent laser stripping step, the flexible material layer 2 is separated from the glass substrate 1 to become a flexible substrate 21 of the flexible display substrate.
  • the light reflecting layer 3 is a metal light reflecting layer; more preferably an aluminum light reflecting layer.
  • the metal light reflecting layer it is preferably produced by a vacuum evaporation method.
  • the parameters of the vacuum evaporation process are preferably: an evaporation rate of 40 nm/s or more, an evaporation pressure of 1.3 ⁇ 10 ⁇ 4 Pa, and an evaporation thickness of 150 nm to 300 nm.
  • the reflective layer 3 of other materials can also be prepared by other methods such as attachment.
  • the opening 31 is formed at the position.
  • the opening 31 is formed on the light reflecting layer 3 at a position opposite to the alignment mark 8 (which can be provided in the base made of the glass substrate 1) by the patterning process, thereby exposing the alignment mark 8 for subsequent steps. Counterpoint.
  • a buffer layer 4 is formed on the metal reflective layer.
  • the light reflecting layer 3 is a metal light reflecting layer
  • the buffer layer 4 is usually an inorganic layer made of a known material such as silicon nitride or silicon oxide (for example, made of a mixed material of silicon nitride or silicon oxide); the thickness may be 250 to 400 nm;
  • a known material such as silicon nitride or silicon oxide (for example, made of a mixed material of silicon nitride or silicon oxide); the thickness may be 250 to 400 nm;
  • the reaction gas used for the deposition may be a mixed gas of SiH 4 , NH 3 , N 2 , or a mixed gas of SiH 4 , N0 2 , N 2 .
  • the step of forming the buffer layer 4 can be eliminated (of course, it can be formed to improve the bonding property of the display structure 9).
  • an amorphous silicon layer 91 is formed.
  • the amorphous silicon layer 91 can be formed by chemical vapor deposition, and the thickness is preferably 40 to 60 nm.
  • the amorphous silicon layer 91 is converted into a polysilicon layer by laser annealing (excimer laser annealing).
  • the laser used in the laser annealing is preferably an ultraviolet laser, and the most preferable wavelength is 308.
  • the active region 911 of the thin film transistor prepared according to the method of the present embodiment is close to the buffer layer 4, that is, it belongs to a "top gate thin film transistor", but it is apparent that a bottom gate thin film transistor is also suitable for the present invention, except that it For the preparation, it is necessary to form a structure such as a gate/gate line, a gate insulating layer, and the like, and then an amorphous silicon layer 91 is prepared. It should be understood that other types of thin film transistors such as metal oxide thin film transistors are also used in the flexible array substrate manufactured by the method of the present embodiment, and it is also possible to form a metal oxide layer without laser annealing.
  • the step may include: forming an active region 911 by using a polysilicon layer by a patterning process, and continuing to form a gate insulating layer, a gate/gate line, a source/drain, a passivation layer, a data line, a planarization layer, and an anode. , a pixel defining layer, an organic light emitting layer, a cathode, a color filter film, and the like.
  • the flexible material layer 2 is subjected to laser lift-off to obtain a flexible display substrate.
  • the flexible material layer 2 is irradiated from the side of the glass substrate 1 with an ultraviolet laser (preferably at a wavelength of 308 nm), and the flexible material layer 2 and the display structure thereon are detached from the glass substrate 1 to form an independent flexible display substrate.
  • the flexible material layer 2 is the flexible substrate 21 of the flexible display substrate.
  • the laser light passing through the flexible material layer 2 is reflected back by the light reflecting layer 3 without being irradiated onto the display structure 9 including a thin film transistor or the like. , there will be no damage to the display structure 9.
  • the metal light reflecting layer has good oxygen barrier property and water barrier property, so that the display structure 9 can be protected. Meanwhile, if an array substrate of a flexible top emission type organic light emitting diode display device is manufactured, as shown in FIG. 3, the light reflecting layer 3 can also reflect the light incident on the flexible substrate 21, thereby increasing the light extraction rate thereof.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)

Abstract

提供一种柔性显示基板及其制备方法、柔性显示装置，属于柔性显示技术领域，可解决现有的柔性显示基板中的显示结构在进行激光剥离时容易受到损坏的问题。柔性显示基板包括：柔性基底（21）和显示结构（9），以及设于所述柔性基底（21）和所述显示结构（9）之间的反光层（3）。柔性显示基板的制备方法包括：在基底上形成柔性材料层（2）；在柔性材料层（2）上形成反光层（3）；形成显示结构（9）；通过激光剥离的方式使柔性材料层（2）与基底分离，得到柔性显示基板。适用于柔性显示装置，尤其是柔性顶发射型有机发光二极管显示装置，以及带有低温多晶硅薄膜晶体管的柔性阵列基板。

Description

柔性显示基板及其制备方法、 柔性显示装置 技术领域
本发明属于柔性显示技术领域， 具体涉及一种柔性显示基板 及其制备方法、 柔性显示装置。 背景技术
随着技术的发展， 柔性显示装置获得了越来越广泛的应用， 柔性显示装置包括有机发光二极管显示装置、 电泳显示装置等不 同类型。 显然， 柔性显示装置的显示基板 (如柔性有机发光二极管 显示装置的柔性阵列基板)的基底必须是柔性基底， 而柔性基底主 要由聚酰亚胺、 聚对苯二曱酸乙二醇酯等有机材料制成。
由于柔性基底易发生变形， 故在显示基板的制备过程中， 柔 性基底的定位、 搬运、 存储等均比较困难。 为此， 如图 1、 图 2 所示，通常要先在玻璃基底 1上形成柔性材料层 2,之后依次在柔 性材料层 2上形成緩冲层 4和显示结构 9(以柔性有机发光二极管 显示装置为例， 包括薄膜晶体管、 数据线、 栅线、 电容、 阳极、 阴极、 有机发光层、 像素界定层等， 因这些均是已知结构， 故图 中未标号)， 再用紫外激光从玻璃基底 1侧照射柔性材料层 2, 使 柔性材料层 2与玻璃基底间 1的附着力降低并与玻璃基底 1分开 (即激光剥离）， 形成独立的柔性显示基板 (此时柔性材料层 2 即成 为柔性基底 21)。
同时，柔性阵列基板中包括以阵列形式布置的多个显示单元， 这些显示单元通常都包括薄膜晶体管， 而低温多晶硅 (LTPS)薄膜 晶体管是薄膜晶体管的一种重要类型， 其有源区 911 由多晶硅构 成； 该有源区 911 的制备方法是先形成非晶硅层， 之后用紫外激 光 (准分子激光)从远离玻璃基底 1的一侧照射非晶硅层，通过准分 子激光退火 (ELA)的方式使非晶硅熔融、 成核、 长大而转变为多晶 硅， 之后再用多晶硅层形成有源区 911。
发明人发现现有技术中至少存在如下问题： 首先， 在激光剥离的过程中， 可能有部分激光穿过柔性材料 层照射到显示结构上， 从而对显示结构的性能造成影响； 例如， 若激光照射到薄膜晶体管 (尤其是金属氧化物薄膜晶体管）的有源 区上， 则会引起阔值电压漂移等不良。
其次， 对具有低温多晶硅薄膜晶体管的阵列基板， 其激光退 火过程中可能有激光穿过非晶硅层照射到柔性材料层上， 从而对 柔性材料层的性能造成破坏， 例如造成柔性材料层碳化或与相邻 的层 (如緩冲层)分离等。 发明内容
本发明所要解决的技术问题包括， 针对现有的柔性显示基板 中的显示结构在进行激光剥离时容易受到损坏的问题， 提供一种 可避免激光剥离时显示结构受损的柔性显示基板及其制备方法、 柔性显示装置。
解决本发明技术问题所采用的技术方案是一种柔性显示基 板， 包括柔性基底和显示结构， 以及
设于所述柔性基底和所述显示结构之间的反光层。 其中， "显示结构" 是指形成在反光层上方的所有用于进行 显示的结构， 依照柔性显示基板类型的不同， 显示结构可包括： 薄膜晶体管、 栅线、 栅绝缘层、 数据线、 平坦化层 (PLN)、 钝化层 ( PVX ) 、 电容、 阳极、 阴极、 有机发光层、 像素界定层 (PDL)、 彩色滤光膜等。 优选的是， 所述反光层为金属反光层； 以及所述反光层与所 述显示结构之间还设有緩冲层。
进一步优选的是， 所述金属反光层由铝制成。
进一步优选的是， 所述金属反光层的厚度在 150nm至 300nm 之间。
优选的是， 所述反光层在与对位标记对应的位置设有开口。 优选的是， 所述柔性基底由有机柔性材料制成。
优选的是，所述显示结构为以阵列形式布置的多个显示单元; 以及所述显示单元包括低温多晶硅薄膜晶体管。
优选的是，所述显示结构为以阵列形式布置的多个显示单元; 以及所述显示单元为顶发射型有机发光二极管显示单元。 解决本发明技术问题所采用的技术方案是一种柔性显示装 置， 其包括上述的柔性显示基板。 解决本发明技术问题所采用的技术方案是一种柔性显示基板 的制备方法， 其包括：
在基底上形成柔性材料层；
在柔性材料层上形成反光层；
形成显示结构； 以及
通过激光剥离的方式使柔性材料层与基底分离， 得到柔性显 示基板。 优选的是， 所述反光层为金属反光层； 以及在所述形成金属 反光层的步骤和所述形成显示结构的步骤之间， 还包括： 在所述 金属反光层上形成緩冲层。
优选的是， 所述金属反光层由铝制成， 并通过真空蒸镀工艺 形成； 所述真空蒸镀工艺的参数为： 蒸镀速率大于等于 40nm/s, 蒸镀气压小于等于 1.3x l0 4Pa,蒸镀厚度在 150nm至 300nm之间。
优选的是， 在所述形成反光层的步骤和所述形成显示结构的 步骤之间， 还包括： 在所述反光层上与对位标记相对应的位置形 成开口。
优选的是，所述显示结构为以阵列形式布置的多个显示单元， 所述显示单元包括低温多晶硅薄膜晶体管； 所述形成显示结构的 步骤包括： 形成非晶硅层； 以及通过激光退火将非晶硅层转变为 多晶石圭层。 本发明的柔性显示基板及其制备方法、 柔性显示装置中， 在 柔性基底 (柔性材料层)和显示结构间设有反光层， 因此， 在激光剥 离时， 反光层可将穿过柔性材料层的激光反射回去， 避免其照射 到包括薄膜晶体管等的显示结构， 进而避免显示结构受到损伤。
同时， 反光层优选为金属材料， 而金属材料往往具有较好的 水、 氧隔绝性能， 从而其可以避免水汽、 氧气等与显示结构接触， 起到保护 (类似于封装)显示结构的作用。
另外， 对具有低温多晶硅薄膜晶体管的柔性阵列基板， 在进 行激光退火时， 反光层还可将穿过非晶硅层的激光反射回去， 从 而避免柔性材料层受到损伤。 本发明适用于柔性显示装置， 尤其是柔性顶发射型有机发光 二极管显示装置， 以及带有低温多晶硅薄膜晶体管的柔性阵列基 板。 附图说明
图 1为现有的一种柔性显示基板的剖面结构示意图； 图 2为现有的一种柔性显示基板在制备过程中进行激光剥离 时的剖面结构示意图；
图 3为本发明的实施例 1的一种柔性显示基板的剖面结构示 意图；
图 4为铝的吸收光谱与反射光谱的曲线图；
图 5为本发明的实施例 1的一种柔性显示基板在制备过程中 在反光层上设置对位开口后的俯视结构示意图；
图 6为本发明的实施例 1的一种柔性显示基板在制备过程中 进行激光退火时的剖面结构示意图；
图 7为本发明的实施例 1的一种柔性显示基板在制备过程中 进行激光剥离时的剖面结构示意图；
其中附图标记为： 1、 玻璃基底； 2、 柔性材料层； 21、 柔性 基底； 3、 反光层； 31、 开口； 4、 緩冲层； 8、 对位标记； 9、 显 示结构； 91、 非晶硅层； 911、 有源区。 具体实施方式
为使本领域技术人员更好地理解本发明的技术方案， 下面结 合附图和具体实施方式对本发明作进一步详细描述。 实施例 1 :
如图 3至图 7所示， 本实施例提供一种柔性显示基板， 其包 括：
柔性基底 21 ;
设于柔性基底 21上的反光层 3;
设于所述反光层 3上方的显示结构 9。
其中， "显示结构 9" 是指形成在反光层 3上方的所有用于 进行显示的结构。 依照柔性显示基板类型的不同， 显示结构 9可 包括： 薄膜晶体管、 栅线、 栅绝缘层、 数据线、 平坦化层 (PLN)、 钝化层（PVX )、电容、阳极、阴极、有机发光层、像素界定层 (PDL)、 彩色滤光膜等。
本实施例的柔性显示基板中，在柔性基底 21和显示结构 9间 设有反光层 3 , 因此， 如图 7所示， 在激光剥离时， 反光层 3可将 穿过柔性材料层 2 的激光反射回去， 避免其照射到包括薄膜晶体 管等的显示结构 9, 从而避免显示结构 9的性能受到影响。 同时， 金属反光层往往具有较好的水、 氧隔绝性能， 从而可以避免水汽、 氧气等与显示结构 9接触， 起到保护显示结构 9的作用。
优选的， 本实施例以柔性顶发射型有机发光二极管显示装置 的阵列基板作为柔性显示基板的例子， 即柔性显示基板中的显示 结构包括以阵列形式布置的多个显示单元， 所述显示单元为顶发 射型有机发光二极管显示单元， 包括驱动电路 (开关薄膜晶体管、 驱动薄膜晶体管、 电容等）、 栅线、 数据线、 阴极、 阳极、 有机发 光层、像素界定层等结构，且其是从远离柔性基底 21的一侧出光。 如图 3所示， 反光层 3可将由有机发光层发出并射向柔性基 底 21的光反射回去， 从而提高柔性显示基板的出光效率； 另外， 所述柔性显示基板优选为柔性阵列基板， 所述柔性阵列基板中包 括以阵列形式布置的多个显示单元， 每个显示单元通常均包括薄 膜晶体管，而薄膜晶体管 (尤其是金属氧化物薄膜晶体管)的有源区 911是最易在激光剥离过程中受到影响的显示结构 9, 故反光层 3 对于阵列基板可起到最大的保护作用。
优选的， 对于柔性阵列基板 (不限于有机发光二极管显示装置 中使用）， 其中优选使用低温多晶硅薄膜晶体管， 即薄膜晶体管的 有源区 911由低温多晶硅材料构成。
对于低温多晶硅薄膜晶体管， 其中的多晶硅有源区 911是通 过先形成非晶硅层 91 ,再激光退火将非晶硅层 91转变为多晶硅层 的方法形成的； 在激光退火过程中， 可能有部分激光穿过非晶硅 层 91 , 从而对柔性基底 21造成破坏； 此时， 反光层 3还可将这些 激光反射回去， 避免柔性基底 21在激光退火中受损。
当然， 应当理解， 本发明的柔性显示基板中的薄膜晶体管也 不限于低温多晶硅薄膜晶体管。
优选的， 所述柔性基底 21由有机柔性材料制成； 更优选由聚 酰亚胺或聚对苯二曱酸乙二醇酯制成， 这是因为由有机柔性材料 制成的柔性基底 21技术成熟， 更为常用。 另外， 本发明尤其适用 于由有机柔性材料制备的柔性基底 21 , 这是因为有机柔性材料更 易受到激光的破坏。 当然， 如果采用不锈钢等无机材料作为柔性 基底 21 , 也是可行的。
优选的， 反光层 3为金属反光层， 且显示结构 9与反光层 3 间还设有緩冲层 4。
金属是最常见的反光材料， 成本低， 其本身不易受激光破坏， 且将金属通过蒸镀等制成薄膜的工艺方法比较成熟， 因此优选用 金属材料制成反光层 3。
而由于金属材料是导电的， 故当用其制备反光层 3时还需要 在其上形成緩冲层 4, 以免金属反光层将包括有源区 911、 栅线、 数据线等的显示结构 9直接导通。
其中， 緩冲层 4可由氮化硅 (SiNx)、 氧化硅 (Si02)等已知的无 机材料制成， 厚度优选在 250-400nm, 緩冲层 4除起绝缘作用外， 还可起到降低表面粗糙度， 改善显示结构 9与柔性基底 21的结合 等作用； 由于在常规显示基板中也有緩冲层 4, 故在此不再对其进 行详细描述。
当然， 应当理解， 反光层 3也可由其他不导电的材料制成 (如 高分子材料制成的反光层）， 此时则可以不设置緩冲层 4。
更优选的， 金属反光层由铝制成。
在激光剥离、 激光退火等工艺中使用的通常为波长 308nm的 紫外激光， 而在常用的金属材料中， 铝对紫外光波长范围内的光 有较高的反射率 (其反射 /吸收曲线如图 4所示）， 因此优选可用铝 制备反光层 3。在图 4中可见，铝材料在紫外光波长范围 (4~380nm) 内具有较高的反射率 (对应左侧反射率坐标)和吸收率 (对应右侧吸 收率坐标)， 从而其可最大限度的阻止紫外线透过。
当然， 应当理解， 如果采用其他紫外区反射率高的金属或合 金制备金属反光层也是可行的， 例如， 铑 (Rh)也具有较高的紫外 区反射率； 且如果使用铜、 银等常规的金属 (其紫外区反射率相对 较低)也是可行的。
进一步优选的， 金属反光层（以铝反光层为例）的厚度在 150~300nm。
显然， 越厚的反光层 3反光效果越好， 但反光层 3厚度过大 也会造成柔性降低、 附着力下降、 成本升高等问题。 经研究发现， 对于金属反光层， 上述厚度范围既可起到较好的反光效果， 又不 会对其他性能产生明显不良影响。
优选的， 如图 5所示， 反光层 3在与对位标记 8对应的位置 设有开口 31。
在显示基板的制备过程中， 构图工艺、 芯片接合 (IC bonding) 工艺等步骤均需要进行精确的对位， 通常的对位方法是在支撑玻 璃基板 1的基台中设置对位标记 8, 通过柔性材料层 2等（因这些 层都是透明的）可看到该对位标记 8 , 从而进行对位。 而在本实施 例中， 反光层 3不透光， 会挡住对位标记 8使其不可见， 因此需 要在反光层 3中与对位标记 8相对应的位置设置开口 31。
本实施例还提供一种柔性显示装置， 其包括上述的柔性显示 基板。
本实施例的柔性显示装置除包括上述的柔性显示基板外， 还 可包括封装基板等其他结构， 其优选是柔性顶发射型有机发光二 极管显示装置， 当然其他类型的柔性显示装置也是可行的。 本实施例还提供一种上述柔性显示基板的制备方法， 其包括 以下步骤：
501、 准备基底。
该基底可为玻璃基底 1等常规的硬质基底。
502、 在基底上形成柔性材料层 2。
该柔性材料层 2优选为有机柔性材料层 2, 例如聚酰亚胺或 聚对苯二曱酸乙二醇酯制成的层。
该柔性材料层 2可采用涂布等常规方法制造， 在后续的激光 剥离步骤中， 柔性材料层 2会与玻璃基底 1分离， 从而成为柔性 显示基板的柔性基底 21。
503、 在柔性材料层 2上形成反光层 3。
优选的， 该反光层 3为金属反光层； 更优选为铝反光层。 对于金属反光层， 其优选采用真空蒸镀的方法制造。
具体的， 对于铝反光层， 其真空蒸镀工艺的参数优选为： 蒸 镀速率大于等于 40nm/s, 蒸镀气压小于等于 1.3x lO—4Pa, 蒸镀厚度 在 150nm至 300nm之间。
由于铝在蒸镀时比较容易氧化而形成氧化铝， 故其优选采用 较高的蒸镀速度和较低的气压以减少氧化。
当然， 对于其他材料的反光层 3 , 也可采用贴附等其他方法 制备。
504、 优选的， 如图 5所示， 在反光层 3上与对位标记 8相对 应的位置形成开口 31。
也就是说， 通过构图工艺在反光层 3上与对位标记 8(可设于 制成玻璃基底 1的基台中）相对的位置形成开口 31 ,从而露出对位 标记 8, 以便在后续步骤中进行对位。
505、 优选的， 在金属反光层上形成緩冲层 4。
当反光层 3为金属反光层时， 为避免其将显示结构 9中的各 部分直接导通， 故需要在其上形成起绝缘作用的緩冲层 4。
其中， 緩冲层 4通常为由氮化硅、 氧化硅等已知材料构成的 无机层（例如由氮化硅、 氧化硅的混合材料制成）； 厚度可在 250~400nm; 其可由等离子体增强化学气相沉积法 (PECVD)制备， 沉积所使用的反应气体可为 SiH4、 NH3、 N2的混合气体， 或 SiH4、 N02、 N2的混合气体。
由于緩冲层 4的材料、 厚度、 制备工艺等是已知的， 故在此 不再详细描述。
当然， 如果反光层 3是不导电的材料， 则也可免去形成緩冲 层 4的步骤（当然也可形成， 以改善显示结构 9的结合性能）。
506、 优选的， 形成非晶硅层 91。
其中， 非晶硅层 91可通过化学气相沉积的方法形成， 厚度优 选在 40~60nm。
507、 优选的， 如图 6所示， 通过激光退火 (准分子激光退火) 使非晶硅层 91转变为多晶硅层。
其中， 激光退火中使用的激光优选为紫外激光， 其最优选波 长为 308亂
如图 6所示， 在激光退火过程中， 由于反光层 3的存在， 故 穿过非晶硅层 91的激光会被反光层 3反射回去， 而不会照射到柔 性材料层 2上， 也就不会对柔性材料层 2产生破坏。
按照本实施例的方法所制备的薄膜晶体管的有源区 911靠近 緩冲层 4, 即其属于 "顶栅型薄膜晶体管" ， 但显然， 底栅型薄膜 晶体管也适用于本发明，区别在于其制备是需要先形成栅极 /栅线、 栅绝缘层等结构， 再制备非晶硅层 91。 应当理解， 若本实施例的方法制造的柔性阵列基板中使用的 是金属氧化物薄膜晶体管等其他类型薄膜晶体管， 也是可行的， 此时只要形成金属氧化物层即可， 而不必进行激光退火。
508、 继续形成显示结构 9的其他部分。
具体的， 本步骤可包括： 通过构图工艺用多晶硅层形成有源 区 911 , 以及继续形成栅绝缘层、 栅极 /栅线、 源 /漏极、 钝化层、 数据线、 平坦化层、 阳极、 像素界定层、 有机发光层、 阴极、 彩 色滤光膜等。
显然， 本步骤中形成的显示结构 9的具体种类、 结构、 位置， 以及形成各种显示结构 9所用的工艺、 顺序、 参数等是根据柔性 显示基板类型的不同而不同的， 但这些均属于已知技术， 故在此 不再详细描述。
509、 如图 7所示， 对柔性材料层 2进行激光剥离， 得到柔性 显示基板。
也就是说，用紫外激光 (优选波长 308nm)从玻璃基底 1一侧照 射柔性材料层 2, 使柔性材料层 2及其上的显示结构从玻璃基底 1 上脱离下来， 成为独立的柔性显示基板， 此时柔性材料层 2就是 柔性显示基板的柔性基底 21。
如图 7所示， 在激光剥离过程中， 由于反光层 3的存在， 故 穿过柔性材料层 2的激光会被反光层 3反射回去， 而不会照射到 包括薄膜晶体管等的显示结构 9上， 也就不会对显示结构 9产生 破坏。
在按照本实施例的方法制造的柔性显示基板中， 金属反光层 具有良好的隔氧、 隔水性能， 故可起到保护显示结构 9的作用。 同时， 若所制造的是柔性顶发射型有机发光二极管显示装置的阵 列基板， 则如图 3所示， 反光层 3还可将射向柔性基底 21的光反 射回去， 从而提高其出光率。 可以理解的是， 以上实施方式仅仅是为了说明本发明的原理 而采用的示例性实施方式， 然而本发明并不局限于此。 对于本领 域内的普通技术人员而言， 在不脱离本发明的精神和实质的情况 下， 可以做出各种变型和改进， 这些变型和改进也视为本发明的 保护范围。

Claims

权 利 要 求 书
1. 一种柔性显示基板， 包括柔性基底和显示结构， 其中 述柔性显示基板还包括：
设于所述柔性基底和所述显示结构之间的反光层。
2. 根据权利要求 1所述的柔性显示基板， 其中， 所述反光层为金属反光层； 以及
所述反光层与所述显示结构之间还设有緩冲层。
3. 根据权利要求 2所述的柔性显示基板， 其中， 所述金属反光层由铝制成。
4. 根据权利要求 3所述的柔性显示基板， 其中， 所述金属反光层的厚度在 150nm至 300nm之间。
5. 根据权利要求 1所述的柔性显示基板， 其中， 所述反光层在与对位标记对应的位置设有开口。
6. 根据权利要求 1至 5中任意一项所述的柔性显示基板 中，
所述柔性基底由有机柔性材料制成。
7. 根据权利要求 1至 5中任意一项所述的柔性显示基板 中，
所述显示结构为以阵列形式布置的多个显示单元； 以及 所述显示单元包括低温多晶硅薄膜晶体管。
8. 根据权利要求 1至 5中任意一项所述的柔性显示基板 中，
所述显示结构为以阵列形式布置的多个显示单元； 以及 所述显示单元为顶发射型有机发光二极管显示单元。
9. 一种柔性显示装置， 其中， 包括：
权利要求 1至 8中任意一项所述的柔性显示基板。
10. 一种柔性显示基板的制备方法， 其中， 包括：
在基底上形成柔性材料层；
在柔性材料层上形成反光层；
形成显示结构； 以及
通过激光剥离的方式使柔性材料层与基底分离， 得到柔性显 示基板。
11. 根据权利要求 10所述的柔性显示基板的制备方法，其中， 所述反光层为金属反光层； 以及
在所述形成金属反光层的步骤和所述形成显示结构的步骤之 间， 还包括： 在所述金属反光层上形成緩冲层。
12. 根据权利要求 11所述的柔性显示基板的制备方法，其中， 所述金属反光层由铝制成， 并通过真空蒸镀工艺形成； 所述 真空蒸镀工艺的参数为： 蒸镀速率大于等于 40nm/s, 蒸镀气压小 于等于 1.3x l0 4Pa, 蒸镀厚度在 150nm至 300nm之间。
13. 根据权利要求 10所述的柔性显示基板的制备方法，其中， 在所述形成反光层的步骤和所述形成显示结构的步骤之间， 还包 括：
在所述反光层上与对位标记相对应的位置形成开口。
14. 根据权利要求 10所述的柔性显示基板的制备方法，其中， 所述显示结构为以阵列形式布置的多个显示单元， 所述显示单元 包括低温多晶硅薄膜晶体管； 所述形成显示结构的步骤包括：
形成非晶硅层； 以及
通过激光退火将非晶硅层转变为多晶硅层。
PCT/CN2014/075811 2013-09-24 2014-04-21 柔性显示基板及其制备方法、柔性显示装置 Ceased WO2015043169A1 (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US14/913,069 US20160197293A1 (en) 2013-09-24 2014-04-21 Flexible display substrate and manufacturing method thereof, and flexible display device
EP14849872.8A EP3051601B1 (en) 2013-09-24 2014-04-21 Flexible display substrate and preparation method therefor, and flexible display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN2013104393838A CN103474583A (zh) 2013-09-24 2013-09-24 柔性显示基板及其制备方法、柔性显示装置
CN201310439383.8 2013-09-24

Publications (1)

Publication Number Publication Date
WO2015043169A1 true WO2015043169A1 (zh) 2015-04-02

Family

ID=49799340

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2014/075811 Ceased WO2015043169A1 (zh) 2013-09-24 2014-04-21 柔性显示基板及其制备方法、柔性显示装置

Country Status (4)

Country Link
US (1) US20160197293A1 (zh)
EP (1) EP3051601B1 (zh)
CN (2) CN103474583A (zh)
WO (1) WO2015043169A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108598138A (zh) * 2018-06-26 2018-09-28 武汉天马微电子有限公司 显示面板及其制备方法和显示装置

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103474583A (zh) * 2013-09-24 2013-12-25 京东方科技集团股份有限公司 柔性显示基板及其制备方法、柔性显示装置
CN103779390B (zh) 2014-02-11 2016-08-17 京东方科技集团股份有限公司 一种柔性显示基板及其制备方法
CN103887157B (zh) * 2014-03-12 2021-08-27 京东方科技集团股份有限公司 光学掩膜板和激光剥离装置
CN104022123B (zh) 2014-05-16 2016-08-31 京东方科技集团股份有限公司 一种柔性显示基板及其制备方法、柔性显示装置
WO2015176487A1 (zh) * 2014-05-19 2015-11-26 京东方科技集团股份有限公司 柔性显示基板及其制造方法、和柔性显示装置
CN104143565B (zh) * 2014-07-28 2017-11-10 京东方科技集团股份有限公司 一种柔性显示基板及其制备方法与显示装置
US9859527B2 (en) * 2015-03-10 2018-01-02 Oculus Vr, Llc Reflective layer for increasing fill factor in an electronic display
CN104992944B (zh) 2015-05-26 2018-09-11 京东方科技集团股份有限公司 一种柔性显示母板及柔性显示面板的制作方法
CN104979215B (zh) 2015-06-23 2018-01-02 京东方科技集团股份有限公司 低温多晶硅薄膜晶体管及其制备方法
US9786790B2 (en) * 2015-12-10 2017-10-10 Industrial Technology Research Institute Flexible device
JP6744130B2 (ja) * 2016-05-26 2020-08-19 住友化学株式会社 有機デバイスの製造方法
CN106784412B (zh) * 2017-03-30 2019-02-26 武汉华星光电技术有限公司 柔性有机发光二极管显示器及其制作方法
CN107421681B (zh) * 2017-07-31 2019-10-01 京东方科技集团股份有限公司 一种压力传感器及其制作方法
CN107644916B (zh) * 2017-09-20 2020-05-08 京东方科技集团股份有限公司 薄膜晶体管及其制作方法
CN107910317A (zh) * 2017-10-25 2018-04-13 信利半导体有限公司 一种提高柔性显示装置制程中对位标识别精确度的方法
CN107978687B (zh) * 2017-11-22 2020-06-05 武汉华星光电半导体显示技术有限公司 柔性oled显示面板的制备方法
CN108073900B (zh) * 2017-12-14 2021-01-08 京东方科技集团股份有限公司 用于指纹识别的柔性显示面板、显示装置及指纹识别方法
CN108054186B (zh) * 2017-12-14 2021-01-29 京东方科技集团股份有限公司 柔性阵列基板及制备方法和显示装置
CN110082951A (zh) 2018-01-25 2019-08-02 元太科技工业股份有限公司 显示装置及其制作方法
JP6666530B2 (ja) * 2018-03-20 2020-03-13 堺ディスプレイプロダクト株式会社 フレキシブルｏｌｅｄデバイス及びその製造方法並びに支持基板
CN110875355A (zh) * 2018-08-30 2020-03-10 上海和辉光电有限公司 一种柔性显示母板、柔性显示面板及其应用
CN109904106B (zh) * 2019-02-28 2021-12-14 云谷（固安）科技有限公司 柔性显示面板及柔性显示面板的制备方法
JP6851519B2 (ja) * 2020-02-20 2021-03-31 堺ディスプレイプロダクト株式会社 フレキシブルｏｌｅｄデバイス及びその製造方法並びに支持基板
CN111463231B (zh) * 2020-04-13 2023-10-17 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法
CN111969004B (zh) * 2020-08-31 2025-02-14 錼创显示科技股份有限公司 微型半导体结构及其制造方法
CN112086469A (zh) * 2020-09-09 2020-12-15 武汉华星光电半导体显示技术有限公司 阵列基板及其制备方法、显示装置
CN112382206B (zh) 2020-11-13 2022-07-12 Tcl华星光电技术有限公司 背板及led面板
CN113053915A (zh) * 2021-03-08 2021-06-29 武汉华星光电半导体显示技术有限公司 一种显示面板及其制备方法
CN113571558B (zh) * 2021-07-14 2023-05-09 深圳市华星光电半导体显示技术有限公司 一种显示背板及显示终端
KR20230044058A (ko) * 2021-09-24 2023-04-03 삼성디스플레이 주식회사 표시 패널용 모기판 및 표시 패널의 제조 방법
KR20230102594A (ko) * 2021-12-30 2023-07-07 엘지디스플레이 주식회사 표시 장치
CN115132808B (zh) * 2022-06-29 2025-10-10 京东方科技集团股份有限公司 一种显示面板、显示面板的制作方法及显示装置
CN114823543B (zh) * 2022-07-01 2022-09-20 惠科股份有限公司 显示面板制备方法及显示面板

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101179111A (zh) * 2006-11-10 2008-05-14 三星Sdi株式会社 有机发光显示器及其制造方法
CN101785086A (zh) * 2007-09-20 2010-07-21 夏普株式会社 显示装置的制造方法和叠层构造体
CN103474583A (zh) * 2013-09-24 2013-12-25 京东方科技集团股份有限公司 柔性显示基板及其制备方法、柔性显示装置
CN103500745A (zh) * 2013-09-25 2014-01-08 京东方科技集团股份有限公司 柔性显示基板及其制备方法、柔性显示装置
CN203503658U (zh) * 2013-09-25 2014-03-26 京东方科技集团股份有限公司 柔性显示基板及柔性显示装置
CN203503661U (zh) * 2013-09-24 2014-03-26 京东方科技集团股份有限公司 柔性显示基板、柔性显示装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH053143A (ja) * 1991-04-19 1993-01-08 Hitachi Ltd 位置合せ方法および装置
EP1127381B1 (en) * 1998-11-02 2015-09-23 3M Innovative Properties Company Transparent conductive oxides for plastic flat panel displays
JP3942017B2 (ja) * 2002-03-25 2007-07-11 富士フイルム株式会社 発光素子
US20040218133A1 (en) * 2003-04-30 2004-11-04 Park Jong-Wan Flexible electro-optical apparatus and method for manufacturing the same
US20070222370A1 (en) * 2003-12-30 2007-09-27 Agency For Science, Technology And Research Flexible Electroluminescent Devices
KR100890250B1 (ko) * 2007-01-08 2009-03-24 포항공과대학교 산학협력단 플렉서블 소자의 제조 방법 및 플렉서블 표시 장치의 제조방법
WO2009099002A1 (en) * 2008-02-04 2009-08-13 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing light-emitting device
US7534635B1 (en) * 2008-03-24 2009-05-19 General Electric Company Getter precursors for hermetically sealed packaging
KR101308200B1 (ko) * 2008-05-06 2013-09-13 엘지디스플레이 주식회사 플렉서블 유기발광 표시장치 및 그 제조 방법
JP2010182582A (ja) * 2009-02-06 2010-08-19 Seiko Epson Corp 有機エレクトロルミネッセンス装置、電子機器
KR20110110978A (ko) * 2010-04-02 2011-10-10 경희대학교 산학협력단 레이저 리프트 오프 공정의 효율 향상을 위한 금속 반사층 제조 방법
KR101172791B1 (ko) * 2010-08-23 2012-08-09 주식회사 엘티에스 레이저 리프트오프 방법 및 레이저 리프트오프 장치
JP2012212522A (ja) * 2011-03-30 2012-11-01 Dainippon Printing Co Ltd 電子素子用積層基板、電子素子、有機エレクトロルミネッセンス表示装置、電子ペーパー、および電子素子用積層基板の製造方法
KR101829313B1 (ko) * 2011-11-03 2018-02-20 삼성디스플레이 주식회사 플렉서블 디스플레이 장치
TWI495091B (zh) * 2012-02-16 2015-08-01 Au Optronics Corp 陣列基板及多晶矽層的製作方法
KR102245511B1 (ko) * 2012-12-27 2021-04-28 엘지디스플레이 주식회사 플렉서블 유기 발광 표시 장치 및 플렉서블 유기 발광 표시 장치 제조 방법
CN104395375B (zh) * 2013-06-26 2017-04-05 东丽株式会社 聚酰亚胺前体、聚酰亚胺、使用了它们的柔性基板、滤色器及其制造方法以及柔性显示器件

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101179111A (zh) * 2006-11-10 2008-05-14 三星Sdi株式会社 有机发光显示器及其制造方法
CN101785086A (zh) * 2007-09-20 2010-07-21 夏普株式会社 显示装置的制造方法和叠层构造体
CN103474583A (zh) * 2013-09-24 2013-12-25 京东方科技集团股份有限公司 柔性显示基板及其制备方法、柔性显示装置
CN203503661U (zh) * 2013-09-24 2014-03-26 京东方科技集团股份有限公司 柔性显示基板、柔性显示装置
CN103500745A (zh) * 2013-09-25 2014-01-08 京东方科技集团股份有限公司 柔性显示基板及其制备方法、柔性显示装置
CN203503658U (zh) * 2013-09-25 2014-03-26 京东方科技集团股份有限公司 柔性显示基板及柔性显示装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3051601A4 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108598138A (zh) * 2018-06-26 2018-09-28 武汉天马微电子有限公司 显示面板及其制备方法和显示装置

Also Published As

Publication number Publication date
EP3051601B1 (en) 2022-01-05
EP3051601A4 (en) 2017-05-10
EP3051601A1 (en) 2016-08-03
CN106410027B (zh) 2019-11-05
CN106410027A (zh) 2017-02-15
US20160197293A1 (en) 2016-07-07
CN103474583A (zh) 2013-12-25

Similar Documents

Publication Publication Date Title
WO2015043169A1 (zh) 柔性显示基板及其制备方法、柔性显示装置
CN103500745B (zh) 柔性显示基板及其制备方法、柔性显示装置
CN203503661U (zh) 柔性显示基板、柔性显示装置
CN104022076B (zh) 阵列基板及其制作方法、显示装置
CN104022077B (zh) 阵列基板及其制作方法、显示装置
CN104078424B (zh) 低温多晶硅tft阵列基板及其制备方法、显示装置
CN103579227B (zh) 薄膜晶体管基板及其制造方法
US20140061632A1 (en) Thin film transistor substrate and method of manufacturing the same
US20090001374A1 (en) Tft Substrate, Reflective Tft Substrate and Method for Manufacturing These Substrates
KR20150052645A (ko) 가요성 표시 장치 및 그 제조 방법
JP2007212699A (ja) 反射型ｔｆｔ基板及び反射型ｔｆｔ基板の製造方法
WO2018232949A1 (zh) Oled面板的封装方法
WO2015196633A1 (zh) 一种阵列基板的制造方法、阵列基板及显示装置
CN107623087A (zh) 柔性oled显示面板及其制备方法
WO2015000256A1 (zh) 阵列基板、显示装置及阵列基板的制作方法
JP2012191025A (ja) 薄膜トランジスタアレー基板、薄膜集積回路装置及びそれらの製造方法
KR102169862B1 (ko) 유기발광다이오드 표시장치 및 이의 제조방법
CN104465670B (zh) 一种阵列基板及其制作方法、显示装置
WO2015100859A1 (zh) 阵列基板及其制造方法和显示装置
CN203503658U (zh) 柔性显示基板及柔性显示装置
WO2019085267A1 (zh) Tft基板及其制作方法
WO2020034718A1 (zh) 显示器件的封装结构、显示装置
CN107342363A (zh) 显示基板及其制备方法
CN204289541U (zh) 阵列基板、显示面板、显示装置
CN111883695A (zh) 一种显示面板的制作方法、显示面板及显示装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14849872

Country of ref document: EP

Kind code of ref document: A1

REEP Request for entry into the european phase

Ref document number: 2014849872

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 14913069

Country of ref document: US

Ref document number: 2014849872

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE