WO2015114041A1 - Dispositif optoélectronique - Google Patents

Dispositif optoélectronique Download PDF

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Publication number
WO2015114041A1
WO2015114041A1 PCT/EP2015/051784 EP2015051784W WO2015114041A1 WO 2015114041 A1 WO2015114041 A1 WO 2015114041A1 EP 2015051784 W EP2015051784 W EP 2015051784W WO 2015114041 A1 WO2015114041 A1 WO 2015114041A1
Authority
WO
WIPO (PCT)
Prior art keywords
optoelectronic
sacrificial
corrodible
sacrificial anode
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2015/051784
Other languages
German (de)
English (en)
Inventor
Matthias KNÖRR
Matthias Goldbach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of WO2015114041A1 publication Critical patent/WO2015114041A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F13/00—Inhibiting corrosion of metals by anodic or cathodic protection
    • C23F13/02—Inhibiting corrosion of metals by anodic or cathodic protection cathodic; Selection of conditions, parameters or procedures for cathodic protection, e.g. of electrical conditions
    • C23F13/06—Constructional parts, or assemblies of cathodic-protection apparatus
    • C23F13/08—Electrodes specially adapted for inhibiting corrosion by cathodic protection; Manufacture thereof; Conducting electric current thereto
    • C23F13/16—Electrodes characterised by the combination of the structure and the material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

Definitions

  • Optoelectronic arrangement The present invention relates to an optoelectronic An ⁇ order according to Claim. 1
  • Optoelectronic devices such as light emitting diode arrays, are used for various lighting applications.
  • the optoelectronic arrangements corrosive gases such as hydrogen sulfide or nitrogen oxide out ⁇ sets can be. This is the case, for example, in optoelectronic arrangements used in automobiles and on roads and in tunnels. It is known that such corrosive gases can attack metallic components of the optoelectronic devices. Particularly vulnerable are components that
  • Silver for example, silver-containing conductive adhesive and silver coatings.
  • An object of the present invention is to provide an optoelectronic device. This object is achieved by an optoelectronic device having the features of claim 1.
  • An optoelectronic device comprises a first element and a sacrificial anode.
  • the first element has a korrodierba ⁇ first material.
  • the anode has a second Ma ⁇ material which has been less noble than the first material.
  • the first element and the sacrificial anode are electrically connected to one another.
  • the sacrificial anode causes this optoelectronic arrangement ⁇ corrosion protection of the first element.
  • the sacrificial anode also corrodes the first element, for example under the influence of corrosion. prevents dangerous gases.
  • the opto-electronic arrangement advantageously for use in environments ⁇
  • the corrosive media such as corrosive gases, such as nitrogen oxides and hydrogen sulfide, are subjected is suitable.
  • the optoelectronic assembly is suitable for use in motor vehicles and on roads and in road tunnels. Since the first element of the opto-electronic device is protected by the sacrificial anode from corrosion, the first element is advantageously a corrosive dierbares material such as silver may have which is herebygüns ⁇ tig available and for many applications has particularly suitable properties.
  • the first material comprises Ag, Cu or Ni.
  • the second mate rial comprises Cu ⁇ thereby, Al, Mg, Zn, Ti, V, Fe, Sn, Ni or In on. It should always be ensured that the second material less noble than the first material in the elektrochemi ⁇ rule voltage range (redox) So negative is. Pre- some way legally enables the protection of the first element through the sacrificial anode to choose the first material of the first element for a specific application optimally, without having to take into account as a possible susceptibility to corrosion of the first Materi ⁇ .
  • this has a further sacrificial anode.
  • the optoelectronic semiconductor chip can be, for example, a light-emitting diode chip (LED chip).
  • LED chip light-emitting diode chip
  • the optoelectronic arrangement environmentally this summarizes a housing material and a housing having at least partially embed ⁇ th in the housing material carrier.
  • the sacrificial anode is formed by a sacrificial section arranged on the carrier.
  • the optoelectronic arrangement can be designed as an optoelectronic component (package).
  • the carrier has the second material.
  • the Trä ⁇ ger is uncoated in the sacrificial section.
  • the sacrificial anode is formed in this optoelectronic device by the second material of the carrier itself.
  • the optoelectronic device is advantageously particularly easy and inexpensive to produce.
  • the support is coated ⁇ be in the sacrificial portion of the second material.
  • the optoelectronic At ⁇ order can be produced easily and inexpensively in this embodiment.
  • the second material is arranged in the sacrificial section in pasty form on the carrier.
  • the second material can be arranged for example by Nadeldosieren (dispensing) on the carrier.
  • Nadeldosieren disensing
  • this also allows a simple and cost-effective manufacture of the opto-electro ⁇ African arrangement.
  • a large amount of the second material may be present, whereby the sacrificial anode may have a long life.
  • the carrier has a front surface on which a optoelekt ⁇ ronischer semiconductor chip is arranged. It is also the Victim section arranged at the front of the wearer. Advantageously thereby be used to form the sacrificial portion standing at the front of Trä ⁇ gers available surface areas.
  • the housing has a first cavity.
  • the opto ⁇ electronic semiconductor chip in the first cavity angeord ⁇ net.
  • the sacrificial section is also arranged in the first cavity.
  • this allows a compact Ge ⁇ staltung the optoelectronic device.
  • the housing has a first cavity and a second cavity.
  • the optoelectronic semiconductor chip is arranged in the first cavity.
  • the sacrificial section is arranged in the second cavity.
  • no space for the sacrificial portion of the sacrificial anode must thereby be reserved in the first cavity. This makes it possible, for example, to form the first cavity completely reflecting.
  • the carrier has a front side and a rear side opposite the front side.
  • an optoelectronic semiconductor chip is arranged on the front side.
  • the sacrificial section is arranged at the back.
  • ⁇ be characterized ge uses standing for the sacrificial portion of the sacrificial anode at the rear of the carrier available volumes ⁇ .
  • the carrier has a front side and a side surface adjoining the front side.
  • an optoelectronic semiconductor chip is arranged on the front side.
  • the sacrificial section is arranged on the side surface.
  • the arranged on the Be ⁇ ten specifications the carrier sacrificial portion of the sacrificial anode ⁇ can thereby exposed in a sawing process, for example during the discloseins the optoelectronic assembly become.
  • no separate process step is advantageously required to bring the victims section of Kochano ⁇ de with the atmosphere in contact.
  • the optoelectronic arrangement of the sacrificial portion is covered at least partially by the housing mate rial ⁇ .
  • the housing material may form an electrolyte which causes an ion transport between the first material of the first element and the second material of the sacrificial anode.
  • the sacrificial portion of the sacrificial anode ⁇ in this optoelectronic arrangement is not visible from the outside, resulting in a pleasing appearance outer ⁇ image of the optoelectronic device.
  • the first element is a portion of the carrier coated with the first material.
  • the first member may be coated with a specular portion of the substrate forms ⁇ ge.
  • the first material may have, for example, silver.
  • the first element is a conductive adhesive.
  • the conductive adhesive can serve, for example, for fastening an optoelectronic semiconductor chip of the optoelectronic device.
  • the conductive adhesive may, for example, comprise silver.
  • Advantageous ingly corrosion of the conductive adhesive and an associated ⁇ continuous increase a thermal resistance of the Leitkle ⁇ bers and a reduction in a strength of the conductive adhesive is prevented by the sacrificial anode of the optoelectronic assembly.
  • this has a printed circuit board. At least one optoelectronic component is arranged on the printed circuit board. net. The sacrificial anode is likewise on the circuit board assigns ⁇ .
  • optoelectronic devices without integrated into the respective optoelectronic component sacrificial anodes can be prevented from being damaged by corrosion in this optoelectronic ⁇ rule arrangement.
  • the latter has a heat sink for cooling at least one optoelectronic component of the optoelectronic device.
  • the sacrificial anode is arranged on the heat sink ⁇ .
  • optoelectronic components can be protected without inte ⁇ grated sacrificial anodes from damage due to corrosion, even in this optoelekt ⁇ tronic arrangement.
  • 1 is a sectional side view of a first opto-electronic device
  • FIG. 2 is a plan view of the first optoelectronic Bauele ⁇ ment.
  • FIG. 3 shows a plan view of leadframe sections of the first optoelectronic component;
  • FIG. 4 shows a plan view of a second optoelectronic construction ⁇ element.
  • 5 shows a plan view of leadframe sections of the second optoelectronic component
  • 6 is a plan view of a third optoelectronic construction ⁇ element.
  • FIG. 7 shows a plan view of leadframe sections of the third optoelectronic component
  • FIG. 8 is a plan view of a fourth opto-electronic construction ⁇ element;
  • FIG. 9 shows a plan view of leadframe sections of the fourth optoelectronic component;
  • Figure 10 is a rear view of the fourth optoelectronic device ⁇ rule.
  • 11 is a plan view of back sides of the Porterrahmenab ⁇ sections of the fourth optoelectronic component.
  • FIG. 13 shows a side view of the fifth optoelectronic component
  • FIG. 14 is a plan view of a sixth optoelectronic component
  • FIG. 15 shows a plan view of leadframe sections of the sixth optoelectronic component
  • 16 is a plan view of an optoelectronic Bauelemen ⁇ teanix.
  • FIG. 17 shows a side view of a further optoelectronic component arrangement.
  • Fig. 1 is a schematic sectional side view of egg ⁇ nes first optoelectronic component 10.
  • Fig. 2 shows a schematic plan view of the first opto-electronic device 10.
  • the first opto-electronic device 10 may be, for example, a light-emitting diode device (LED device).
  • the first optoelectronic component 10 can also be a laser component, a light sensor or another optoelectronic component.
  • the first optoelectronic ⁇ specific component 10 may be referred to as a package.
  • the first opto-electronic device 10 includes a first lead frame portion 100 and a second Porterrahmenab ⁇ section 200 on.
  • the first conductor frame portion 100 includes a front side 101 and a front 101 opposite ⁇ lying back 102.
  • the second lead frame section 200 has a front side 201 and a rear side 202 opposite the front side 201.
  • Fig. 3 shows a specific ⁇ matic plan view of the front sides 101, 201 of the circuit ⁇ frame portions 100, 200.
  • the leadframe sections 100, 200 each comprise an electrically conductive material, preferably a metal.
  • the first lead frame portion 100 and the second lead frame portion 200 may include Cu.
  • the first conductor frame portion 100 and the second Porterrahmenab ⁇ section 200 are spaced apart and electrically isolated against each other.
  • the first conductor frame portion 100 and the second Porterrah ⁇ menabrough 200 of the first opto-electronic component 10 are embedded in a housing 300 of the first optoelectronic component 10th
  • the housing 300 has an electrically insulating housing material 303, which may be, for example, a plastic material, such as an epoxy resin, a silicone or a ceramic.
  • the housing 300 may be made, for example, by a molding process.
  • Lead frame portion 200 preferably already during the Her ⁇ position of the housing 300 into the housing 303 of the Ge material ⁇ reheatuses 300 embedded.
  • the housing 300 has a top surface 301 and one of the upper ⁇ side 301 opposite bottom 302. Parts of the back are available at the lower ⁇ page 302 of the casing 300 102 of the first lead frame portion 100 and parts of the back side 202 of the second lead frame portion 200 and form electric connection faces of the first opto-electronic device 10.
  • the exposed at the bottom 302 of the housing 300 parts of Rear sides 102, 202 of the conductor frame sections 100, 200 can form, for example, solder contact surfaces suitable for surface mounting.
  • the housing 300 On its upper side 301, the housing 300 has a first cavity 310 and a second cavity 320. In the first cavity 310 of the housing 300, a part of the front side 101 of the first leadframe section 100 is accessible. In the second cavity 320 of the housing 300, a part of the front ⁇ side 201 of the second lead frame portion 200 is accessible. In the first cavity 310 of the housing 300, a optoelekt ⁇ ronischer semiconductor chip is arranged 400th
  • the optoelectronic semiconductor chip 400 may be, for example, a light-emitting diode chip (LED chip), a laser chip, a photodiode or another optoelectronic semiconductor chip.
  • the optoelectronic semiconductor chip 400 has a top side 401 and a bottom side 402 opposite the top side 401.
  • the bottom 402 of the optoelectronic semiconductor chip 400 is attached by means of an electrically conductive fastening member 410 in such a manner on the front side 101 of the first Porterrahmenab- section 100, that an electrically conductive Verbin ⁇ connection between an electrode disposed on the underside 402 of the optoelectronic semiconductor chip 400 electrical contact area of the optoelectronic semiconductor chip 400 and the first lead frame portion 100 consists.
  • One at the upper side 401 of the optoelectronic semiconductor chip 400 angeord ⁇ designated further electrical contact surface of the optoelectronic semiconductor chip 400 by means of a bonding wire 420
  • the top surface 401 of the optoelectronic semiconductor chip 400 forms a radiation passage area of the optoelectronic ⁇ rule semiconductor chip 400.
  • electromagnetic Strah ⁇ lung is emitted or absorbed at the top 401 of the opto ⁇ electronic semiconductor chips.
  • a converter element 430 is arranged above the upper side 401 of the optoelectronic semiconductor chip 400.
  • the converter element 430 is not shown for clarity.
  • the converter element 430 is provided to convert a wavelength of an electromagnetic radiation emitted or absorbed by the optoelectronic semiconductor chip 400.
  • the converter element 430 can be configured to convert light emitted by the optoelekt ⁇ tronic semiconductor chip 400, electromagnetic radiation having a wavelength in the blue spectral range or ultravio ⁇ crisps in white light.
  • the converter element 430 may comprise embedded wellenfurnkonvertie ⁇ Rende particles ten consider for example, an organic phosphor, an inorganic phosphor and / or quantum have. The converter element 430 could fall ent ⁇ .
  • the optoelectronic semiconductor chip 400, the Konverterele ⁇ element 430 and at least parts of the bonding wire 420 are embedded in an encapsulation 440 that fills the first cavity 310 of the Gezzau ⁇ ses 300th
  • the potting 440 is not shown for the sake of clarity.
  • the cast Ver ⁇ 440 may comprise, for example a silicone.
  • the encapsulation 440 serves to protect the optoelectronic semiconductor chip 400, the converter element 430 and the bonding wire 420 from being damaged by external influences.
  • the potting 440 can also be omitted.
  • the fastening element 410 for fastening the optoelectronic ⁇ African semiconductor chip 400 on the front side 101 of the first lead frame portion 100 in the first cavity 310 of the Ge ⁇ housing 300 may be formed, for example, as a conductive adhesive.
  • the fastening element 410 may comprise a corrodible Ma ⁇ TERIAL 411, for example, silver.
  • the corrodible material 411 of the fastener 410 could corrode under the influence of a corrosive medium, such as a corrosive gas such as hydrogen sulfide or nitric oxide.
  • a corrosive medium such as a corrosive gas such as hydrogen sulfide or nitric oxide.
  • ⁇ ent-preserved silver could corrode under the influence of hydrogen sulfide to silver sulfide.
  • the fastening element could supply 410 assume a black color, which would adversely affect the opti ⁇ cal appearance of the first optoelectronic Bauele ⁇ ment 10th
  • corrosion of the corrodible material 411 of the fastener 410 could adversely affect mechanical and thermal properties of the fastener 410.
  • ⁇ sondere 410 could a thermal resisting ⁇ state of the fastening element 410 increased and a strength of the connection of the optoelectronic semiconductor chip 400 to the front 101 of the first lead frame portion 100 re ⁇ quizd by corrosion of corrodible material 411 of the fastener. As a result, the service life of the first optoelectronic component 10 could be reduced.
  • the first lead frame portion 100 of the first opto-see component 10 may comprise a first corrodible element 110, which in turn has a first corrodible Ma ⁇ TERIAL 111th
  • the first corrodible material 111 is a material which, under the influence of a corrosive medium , for example under the influence of a corrosive gas such as
  • the first corrodible material 111 may comprise, for example, silver.
  • the first corrodible element 110 may be gebil- det example, by a ⁇ is arranged on the front side 101 and / or the back coating 102 of the first lead frame portion 100 or through the first lead frame portion 100 itself. If the first corrodible element 110 is formed by ei ⁇ ne coating on the first lead frame portion 100 with the first corrodible material 111, the first corrodible element 110 can serve to hen 100 erhö- an optical reflectivity of the first lead frame portion.
  • first corrodible material 111 of the first KORRO ⁇ dierbaren corrode element 110, for example by formation of silver sulfide, then the reflectivity of the first lead frame portion 100 would be reduced.
  • adhesion of the encapsulation 440 and / or other components of the first optoelectronic component 10 could be reduced.
  • the first optoelectronic component 10 has a first sacrificial anode 120.
  • the first sacrificial anode 120 is connected in an electrically conductive manner to the first corrodible element 110 and to the fastening element 410.
  • the first sacrificial anode 120 is formed by a first sacrificial section 121, which is arranged on the part of the front side 101 of the first leadframe section 100 which is accessible in the first cavity 310.
  • the first sacrificial section 121 is formed by a first sacrificial section 121, which is arranged on the part of the front side 101 of the first leadframe section 100 which is accessible in the first cavity 310.
  • first sacrificial anode 120 has a first sacrificial material
  • first sacrificial portion 121 of the first sacrificial anode 120 is formed by several separate portions of the front surface ⁇ page 101 of the first lead frame portion 100th
  • the front side 101 of the first leadframe section 100 may be in the first sacrificial portion 121 of the first sacrificial anode 120 may be coated with the first sacrificial material 122.
  • the first Lei ⁇ terrahmenabites 100 may also itself comprise the first Op ⁇ fermaterial 122 which is exposed in this case, the area of the first sacrificial portion 121 of the first sacrificial anode 120th
  • the first conductor frame portion 100, in the first sacrificial portion 121 of the first sacrificial anode 120 also ge ⁇ aims be offset with the first sacrificial material 122nd
  • the first sacrificial material 122 is less noble than the first KORRO ⁇ Dierbare material 111 of the first corrodible element 110 and as the corrodible material 411 of the Befest frequenciesele ⁇ ments 410.
  • the first sacrificial material 122 of the first sacrificial anode 120 in the electrochemical voltage series ( Redox series) is more negative than the first corrodible material 111 of the first corrodible element 110 and as the corrodible material 411 of the fastener 410.
  • Redox series electrochemical voltage series
  • Material 411 of the fastener 410, the first Kochma ⁇ material 122 of the first sacrificial anode 120 corroded.
  • the encapsulation 440 and / or the Gezzausemate- rial 303 of the housing 300 can be used. Corrosion of the first sacrificial material 122 of the first sacrificial anode 120 prevents corrosion of the first corrodible material 111 of the first corrodible element 110 and corrosion of the corrodible material 411 of the fastener 410.
  • the first member 110 and the corrodible Befest Trentsele ⁇ element 410 thus are determined by the first sacrificial anode 120 ge ⁇ protects.
  • the second lead frame portion 200 has a second corrodible element 210 having a second corrodible Ma ⁇ TERIAL 211th
  • the second corrodible element 210 may be formed, for example, by a coating of the second leadframe section 200 or by one at the front 201 and / or the rear side 202 exposed portion of the second lead frame portion 200 itself be formed.
  • the second leadframe section 200 has a second sacrificial anode 220, which is electrically conductively connected to the second corrodible element 210.
  • the second sacrificial anode 220 is formed by a second sacrificial section 221 which is arranged in a part of the front side 201 of the second leadframe section 200 accessible in the second cavity 320 of the housing 300 on the front side 201 of the second leadframe section 200.
  • the second sacrificial anode 220 has a second sacrificial material 222 that is less noble than the second corrodible material 211 of the second corrodible element 210.
  • the second Op ⁇ fermaterial 222 of the second sacrificial anode 220 may be the same material as the first sacrificial material 122 in the first anode 120.
  • the second anode 220 may be affected by working coating of the front side 201 of the second Porterrahmenab ⁇ section 200 with the second sacrificial material 222 may be formed in the second Op ⁇ ferabites 221.
  • the second Porterrahmenab ⁇ section 200 may also have the second sacrificial material 222 and / or be specifically offset with the second sacrificial material 222.
  • the second sacrificial anode 220 is formed by a part of the second lead frame portion 200 exposed in the second sacrificial portion 221.
  • the first sacrificial anode 120 of the first optoelectronic component 10 may serve to protect other or further elements than the first corrodible element 110 and the fastening element 410 from corrosion.
  • the walls ⁇ ren or other corrodible elements to be protected must be electrically conductively connected to the first sacrificial anode 120th
  • the second sacrificial anode 220 may serve to protect other or further corrodible elements than the second corrodible element 210 from corrosion.
  • the others or further Ren to be protected elements must be electrically connected to the second sacrificial anode 220.
  • either the first sacrificial anode 120 or the second sacrificial anode 220 can be omitted.
  • the first corrodible material 111 of the first korrodierba ⁇ ren member 110, the corrodible material 411 of the Fixed To ⁇ restriction member 410 and second corrodible material 211 of the second corrodible element 210 can, for example, Ag, Cu or Ni have.
  • the first sacrificial material 122 of the first sacrificial anode 120 and the second sacrificial material 222 of the second sacrificial anode 220 may include, for example, Cu, Al, Mg, Zn, Ti, V, Fe, Sn, Ni, or In.
  • the sacrificial material 122 222 410 210 must each sacrificial anode 120, 220 may be less noble than the corrodible material 111, 411, 211 of the corrodible by the jewei ⁇ celled sacrificial anode 120, 220 to be protected Ele ⁇ ments 110.
  • the construction of the first optoelectronic component 10 with the conductor frame sections 100, 200 embedded in the housing material 303 of the housing 300 is only to be understood as an example.
  • the first opto-electronic device 10 could also comprise a ceramic substrate, a circuit board designed as a carrier or another carrier instead of a conductor ⁇ frame portions 100, 200th
  • FIG. 4 shows a schematic plan view of a second optoelectronic component 20.
  • FIG. 5 shows a schematic plan view of the leadframe sections 100, 200 of the second optoelectronic component 20.
  • the second optoelectronic component 20 differs from the first opto ⁇ electronic component 10 in that the housing 300 has a third cavity 330 and a fourth cavity 340 on its upper side 301 in addition to the first cavity 310 and the second cavity 320.
  • the third cavity 330 of the housing 300 of the first sacrificial anode 120 forming the first sacrificial portion 121 of the front side 101 of the first Aberrah- menabites 100 is accessible.
  • the fourth cavity 340 of the housing 300 of the second sacrificial anode 220 forming two ⁇ te sacrificial portion 221 of the front side 201 of the second lead frame portion 200 ⁇ accessible.
  • the first sacrificial section 121 of the first sacrificial anode 120 and the second sacrificial section 221 of the second sacrificial anode 220 are formed in the second optoelectronic component 20 as in the first optoelectronic component 10.
  • the first sacrificial anode 120 is electrically conductive with the first corrodible element 110 and with the first Fastening ⁇ transmission element 410 connected.
  • the second sacrificial anode 220 is electrically connected to the second corrodible element 210.
  • the first sacrificial anode 120 forming first Op ⁇ ferabites is disposed in the third cavity 330 and not in the first cavity 310,121 at the second opto-electronic device 20, the whole can in the first cavity 310 exposed part of the front face 110 of the first Lead frame portion 100 in the second optoelectronic device 20 advantageously be optically reflective be ⁇ layers.
  • 6 shows a schematic plan view of a third opto ⁇ electronic component 30.
  • Fig. 7 shows a schematic plan view of the lead frame sections 100, 200 of the third optoelectronic component 30.
  • the third optoelectronic device 30 is the first sacrificial anode 120 forming first sacrificial portion 121 of the front side 101 of the first lead frame portion 100 is not free in the first cavity 310 of the housing 300, but is covered by the housing 303 mate rial of the housing ⁇ 300th Accordingly, the second sacrificial portion 221 of the front side 201 of the second lead frame section 200 forming the second sacrificial anode 220 is not exposed in the second cavity 320 of the housing 300, but is covered by the housing material 303 of the housing 300.
  • the first sacrificial anode 120 and the second anode 220 are formed in the third opto-electronic device 30 as in the first optoelectronic device ⁇ rule 10th
  • Fig. 8 shows a schematic plan view of a fourth opto-electronic component 40.
  • Fig. 9 shows a schematic plan view of the lead frame portions 100, 200 of the fourth optoelectronic component 40.
  • Fig. 10 is a schematic ⁇ schematic rear view of the fourth optoelectronic component 40 in which the underside 302 of the housing 300 and the rear sides 102, 202 of the leadframe sections 100,
  • FIG. 11 shows a schematic gurskyrti ⁇ ge view of the lead frame sections 100, 200 of the fourth optoelectronic component 40, in which the back sides 102, 202 of the leadframe sections 100, 200 are visible.
  • the fourth optoelectronic component 40 differs from the first optoelectronic component 10 in that the first sacrificial portion 121 forming the first sacrificial anode 120 is arranged on the rear side 102 of the first leadframe portion 100.
  • the second Op ⁇ feranode 220 forming second sacrificial portion 221 at the rear side 202 of the second lead frame portion 200 is arranged.
  • the first sacrificial section 121 and the second sacrificial section 221 are exposed on the rear sides 102, 202 of the leadframe sections 100, 200, ie they are not covered by the housing material 303 of the housing 300. It would also be mög ⁇ Lich, the sacrificial portions 121 to cover 221 on the rear sides 102, 202 of the lead frame portions 100, 200 through the housing material of the housing 303 300th Incidentally, the first sacrificial anode 120 and the second sacrificial anode 220 are formed in the fourth optoelectronic component 40 as in the first optoelectronic component 10.
  • Fig. 12 shows a schematic plan view of a fifth optoelectronic component 50.
  • Fig. 13 shows a schematic side view of the fifth optoelectronic Bauele ⁇ ments 50.
  • Side view 13 shown is to the top 301 of the housing 300 the Un ⁇ terseite 302 of the housing 300 extending side surface of the housing 300 of the fifth optoelectronic device 50 visible.
  • a side surface 103 of the first lead frame portion 100 and a side surface 203 of the second lead frame portion 200 are exposed.
  • Be the side surfaces 103, 203 of the lead frame portions 100, 200 of the fifth optoelectronic component 50 can, for example, during a disclosezeins the fifth opto ⁇ electronic component 50 by a sawing process frge ⁇ been inserted.
  • the first optoelectronic component 10 which is the first sacrificial anode 120 forming first Kochab ⁇ section 121 in the fifth optoelectronic component 50 on the side surface 103 of the first lead frame portion 100 is disposed.
  • the second sacrificial portion 221 forming the second sacrificial anode 220 is disposed on the side surface 203 of the second lead frame portion 200.
  • Fig. 14 shows a schematic plan view of a sixth optoelectronic component 60.
  • Fig. 15 shows a schematic ⁇ schematic plan view of the lead frame portions 100, 200 of the sixth optoelectronic component 60.
  • the housing 300 also in the sixth Optoelectronic device 60 on its upper side 301, a third cavity 330 and a fourth cavity 340 on.
  • the first sacrificial section 121 forming the first sacrificial anode 120 is arranged on a part of the front side 101 of the first leadframe section 100 which is accessible in the third cavity 330 of the housing 300.
  • the second the second sacrificial anode 220 forming sacrificial portion 221 is disposed on ei ⁇ nem accessible in the fourth cavity 340 of the front side 201 of the second lead frame portion 200th
  • the first sacrificial anode 120 is not formed by a coating of the front side 101 of the first leadframe section 100 with the first sacrificial material 122 and also not by an exposed part of the first leadframe section 100 having the first sacrificial material 122.
  • the second sacrificial anode 220 is not covered by a coating of the front side 201 of the second leadframe section 200 with the second sacrificial material 222, nor by a second sacrificial material 222 having and exposed Part of the second lead frame portion 200 formed.
  • the second sacrificial material 222 is provided as a paste-like material over the second sacrificial portion 221 at ⁇ sorted in the fourth cavity 340 to form the second sacrificial anode 220th
  • the pasty first sacrificial material 122 and the pasty second sacrificial material 222 may have been arranged in the cavities 330, 340 by needle dispensing (dispensing), for example.
  • the first op ⁇ feranode 120 has a comparatively large amount of the first op ferermaterial 122.
  • the second sacrificial anode 220 may include a comparatively large amount of the second sacrificial material 222.
  • FIG. 16 shows a schematic illustration of an optoelectronic component arrangement 500.
  • Component array 500 may be, for example, a Leuchtdio ⁇ den arrangement.
  • the optoelectronic component arrangement 500 may be provided for use in a motor vehicle or on a road or in a tunnel.
  • the optoelectronic component arrangement 500 has a printed circuit board 510. On a top side of the printed circuit board 510, a plurality of optoelectronic components 520 is arranged. The optoelectronic components 520 are interconnected by means of interconnects 511 arranged on the printed circuit board 510 in an electrical series connection. The optoelectronic components 520 can also be referred to as packages. Each optoelectronic component 520 has at least one optoelectronic semiconductor chip 521, which may be formed, for example, as a light-emitting diode chip, as a laser chip or as a photosensor.
  • each optoelectronic component on a 520 ers ⁇ tes corrodible member 522 and a second corrodible element 524th The first corrodible member 522 each optoelectronic device 520 includes a first KORRO ⁇ dierbares material 523rd
  • the second corrodible element 524 of each optoelectronic component 520 has a second corrodible material 525.
  • the optoelectronic components 520 may be formed like the first optoelectronic component 10. However, the optoelectronic components 520 do not have any sacrificial objects 120, 220 for protecting the corrodible elements 522, 524.
  • a first anode 530 having a first sacrificial mate rial ⁇ 531, 511 is electrically conductively connected at a first end of the series of optoelectronic semiconductor chip 521 with a first portion of the trace.
  • Each section of the conductor track 511 arranged between two optoelectronic semiconductor chips 521 of the series circuit of optoelectronic semiconductor chips 521 is electrically conductively connected to a respective further sacrificial anode 550, which has a further sacrificial material 551.
  • each corrodible element 522, 524 each opto ⁇ electronic semiconductor chips 521 of the optoelectronic component arrangement 500 is tend connected so directly electrically conducting with one of the anodes 530, 540, 550, that the each corrodible element 522, 524 and the jewei ⁇ celled sacrificial anode 530, 540, 550 are at the same electric Po ⁇ potential.
  • each corrodible element 522, 524 protected by the respective associated sacrificial anode 530, 540, 550 from corrosion.
  • the sacrificial materials 531, 541, 551, the anodes 530, 540, 550 are respectively less noble than the corrodible materials 523, 525 of the corrodible elements 522, 524.
  • the sacrificial Mate ⁇ rials 531, 541, 551, the anodes 530, 540, 550 may be formed Like the sacrificial materials 122, 222 of the sacrificial anodes 120, 220 of the first optoelectronic component 10 of FIGS. 1 to 3.
  • the corrodible materials 523, 525 of the corrodible elements 522, 524 may be formed like the corrodible materials 111, 211, 411 of the corrodible elements 110 , 210, 410 of the first optoelectronic component 10 of FIGS. 1 to 3.
  • the optoelectronic component arrangement 600 may, for example, be a light-emitting diode arrangement.
  • the opto-electronic construction element array 600 may, for example, for use in a motor vehicle on a road or be provided in a road ⁇ stantunnel.
  • the optoelectronic component arrangement 600 has a printed circuit board 610.
  • the circuit board 610 is on a
  • the printed circuit board 610 has a plurality of metallizations 611 which each extend from an upper side of the printed circuit board 610 through the printed circuit board 610 to a lower side of the printed circuit board 610 and are electrically and thermally conductively connected to the heat sink 613.
  • each ⁇ de metallization 611 of the printed circuit board 610 is electrically conductively connected via a lead compound 612 with one optoelectronic component 620th
  • the optoelectronic construction elements 620 are thus in a parallel circuit angeord ⁇ net.
  • the optoelectronic devices 620 of the optoelectronic component arrangement 600 may each as opto electro ⁇ African devices 520 of the optoelectronic component arrangement 500 of Fig. 16 is formed to be.
  • each optoelectronic component 620 of the optoelectronic component arrangement 600 has at least one optoelectronic semiconductor chip.
  • each optoelectronic component 620 of the optoelectronic component arrangement 600 has at least one corrodible element with a corrodible material.
  • the corrodible element is about the lead compound 612 and the metallization 611 being electrically conductively connected to the heat sink 613, that the heat sink 613 and the corrodible element ei ⁇ nem are common potential.
  • the heat sink 613 of the optoelectronic component arrangement 600 has a sacrificial anode 630 with a sacrificial material 631.
  • the sacrificial anode 630 is electrically conductively connected to the heat sink 613 in such a way that the sacrificial anode 630 is at the same electrical potential as the corrodible elements of the optoelectronic components 620 of the optoelectronic component arrangement 600.
  • the sacrificial material 631 is less noble than the corrodible mate rial ⁇ the corrodible elements of the optoelectronic devices 620.
  • the sacrificial material 631 can, for example, as the sacrificial materials 122, 222, see 411 of the first optoelectronic device may be formed 10th
  • the corrodible Ma ⁇ TERIAL the corrodible elements of the optoelectronic devices 620 of the optoelectronic component arrangement 600 may be formed from 1 to 3 as the corrodible materials 111, 211, 411 of the first opto-electronic device 10 of FIGS.
  • the optoelectronic components 620 of the optoelectronic component arrangement 600 may contain further corrodible elements. te, which are at other electrical potentials than the previously mentioned corrodible elements of the optoelectronic devices 620.
  • the optoelectronic component arrangement 600 can have further sacrificial anodes which are at common potential with the further corrodible elements.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un dispositif optoélectronique qui est conçu sous la forme d'un composant optoélectronique (10, 20, 30, 40, 50, 60) et qui comprend un premier élément corrodable (110) et une première anode sacrificielle (120). Le premier élément corrodable (110) comporte une première matière corrodable (111). La première anode sacrificielle (120) comporte une première matière sacrificielle (122) qui est plus commune que la première matière corrodable (111). Le premier élément corrodable (110) et la première anode sacrificielle (120) sont connectés électriquement l'un à l'autre. Ledit dispositif optoélectronique peut aussi être conçu sous la forme d'un agencement de composants optoélectroniques (500, 600).
PCT/EP2015/051784 2014-01-30 2015-01-29 Dispositif optoélectronique Ceased WO2015114041A1 (fr)

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DE102014101154.6 2014-01-30
DE102014101154.6A DE102014101154A1 (de) 2014-01-30 2014-01-30 Optoelektronische Anordnung

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DE102016208489A1 (de) * 2016-05-18 2017-11-23 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines optoelektronischen bauteils und optoelektronisches bauteil
DE102018110954A1 (de) * 2018-05-07 2019-11-07 Optics Balzers Ag Lift-Off Verfahren mittels Jetten

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DE112004000155T5 (de) * 2003-01-16 2008-03-20 Matsushita Electric Industrial Co., Ltd., Kadoma Anschlussrahmen für ein Halbleiterbauelement
US20090141498A1 (en) * 2007-12-03 2009-06-04 Hitachi Cable Precision Co., Ltd. Lead frame, method of making the same and light receiving/emitting device
JP2010206034A (ja) * 2009-03-05 2010-09-16 Panasonic Corp 光半導体装置用リードフレーム，光半導体装置用パッケージ，光半導体装置，光半導体装置用リードフレームの製造方法，光半導体装置用パッケージの製造方法および光半導体装置の製造方法
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EP2605292A2 (fr) * 2010-08-11 2013-06-19 Korea University Research and Business Foundation Module photovoltaïque résistant à la corrosion

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DE102014101154A8 (de) 2015-10-22

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