WO2015149172A1 - Lignes de transmission à faible perte sur silicium, et composants à hyperfréquences - Google Patents

Lignes de transmission à faible perte sur silicium, et composants à hyperfréquences Download PDF

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Publication number
WO2015149172A1
WO2015149172A1 PCT/CA2015/050253 CA2015050253W WO2015149172A1 WO 2015149172 A1 WO2015149172 A1 WO 2015149172A1 CA 2015050253 W CA2015050253 W CA 2015050253W WO 2015149172 A1 WO2015149172 A1 WO 2015149172A1
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WIPO (PCT)
Prior art keywords
posts
microwave component
passive microwave
photoresist
μπι
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Ceased
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PCT/CA2015/050253
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English (en)
Inventor
Atabak RASHIDIAN
Lotfollah Shafai
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University of Manitoba
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University of Manitoba
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support

Definitions

  • the present disclosure relates to passive microwave components and in particular to on silicon transmission lines and antennas.
  • a method of passive microwave component construction comprising sputtering metal conductor on a silicon wafer to form a ground plane; applying a photoresist dielectric film on top of the metal conductor; performing photolithography to construct a substrate structure using the photoresist; sputter a metal conductor through mask onto the substrate structure to form a top conductor; and performing a development process to remove unexposed photoresist leaving exposed photoresist between the top conduct and ground plane.
  • the metal conducts is a conductive metal such as copper or aluminum.
  • the photoresist creates a support structure.
  • the development process utilizes a propylene glycol monomethyl ether acetate.
  • the photoresist is applied at approximately 25 ⁇ thick film of a low permittivity polymer.
  • the photoresist has a dielectric constant of 3.2.
  • a transmission line width is created by the top conductor.
  • the substrate width forms a narrow film transmission line is truncated to fit the 50 ⁇ microstrip line width.
  • the dielectric posts are created by the substrate.
  • the dielectric posts are periodically patterned along a transmission line.
  • the posts are approximately 25 ⁇ thick dielectric posts with dimensions of 100 ⁇ ⁇ 70 ⁇ .
  • the posts are 200 ⁇ far from each other.
  • the posts are varied along a line width by approximately 0.3 mm.
  • the method is for manufacturing a stepped impedance filter.
  • the size of the posts are varied in size.
  • the method is for manufacturing a microstrip patch antenna.
  • the antenna is implemented on a
  • the dielectric film is truncated to fit or be slightly smaller than the top conductor.
  • narrow line posts are used in the structure where posts are space along the width of the top conductor and posts are spaced along transmission line.
  • the structure is a silicon antenna using 25 ⁇ tall narrow line posts.
  • the structure is a microstrip patch antenna using square posts.
  • the method further comprising repeatedly applying multiple layers and top conductive layers.
  • a passive microwave component comprising a metal conductor on a silicon wafer providing a ground plane; a substrate deposited on the metal conductor formed during photolithography using a photoresist; and a top metal conduct on the n a rrow f i I m s u bstrate .
  • the metal conducts is a conductive metal such as copper or aluminum.
  • the photoresist creates a support structure.
  • the development process utilizes a propylene glycol monomethyl ether acetate.
  • the photoresist is applied at approximately 25 ⁇ thick film of a low permittivity polymer.
  • the photoresist has a dielectric constant of 3.2.
  • a transmission line width is created by the top conductor.
  • the substrate width forms a narrow film transmission line is truncated to fit the 50 ⁇ microstrip line width.
  • dielectric posts are created by the substrate.
  • dielectric posts are periodically patterned along a transmission line.
  • the posts are approximately 25 ⁇ thick dielectric posts with dimensions of 100 ⁇ ⁇ 70 ⁇ .
  • the posts are 200 ⁇ far from each other.
  • the posts are varied along a line width by approximately 0.3 mm.
  • the passive microwave component is for manufacturing a stepped impedance filter.
  • the size of the posts are varied in size.
  • the passive microwave component is a microstrip patch antenna.
  • the antenna is implemented on a 25 ⁇ -thick dielectric film with dielectric constant of 3 and loss tangent of 0.03.
  • the dielectric film is truncated to fit or be slightly smaller than the top conductor.
  • narrow line posts are used in the structure where posts are space along the width of the top conductor and posts are spaced along transmission line.
  • the structure is a silicon antenna using 25 ⁇ tall narrow line posts.
  • the structure is a microstrip patch antenna using square posts.
  • the structure comprises multiple substrate and conductive layers.
  • one or more air gaps are created between the top conduct and the ground plane.
  • Figure 1 shows a narrow film on-silicon microstrip line
  • Figure 2 shows a graph of characteristic impedance of the narrow film transmission line
  • Figure 3 shows a graph of attenuation of the proposed transmission lines compared with the attenuation of conventional thin film microstrip line
  • Figure 4 shows a representation of conventional on-silicon thin film microstrip line
  • Figure 5 shows representation of on-silicon transmission line using 25 ⁇ tall posts with dimensions of 100 ⁇ by 70 ⁇ where the distance between two adjacent posts is 200 ⁇ ;
  • Figure 6 shows representation of on-silicon stepped line using 25 ⁇ tall posts
  • Figure 7 shows representation of on-silicon stepped-impedance filter
  • Figure 8 shows on-silicon conventional microstrip patch antenna
  • Figure 9 shows graphs of (a) reflection coefficient and (b) gain of the on-silicon conventional patch antenna using 25 ⁇ tall films;
  • Figure 10 shows radiation patterns of the on-silicon conventional antenna using 25 ⁇ tall films at 60 GHz where (a) is the E-plane; (b) is the H-plane where the cross- polarization levels are less than -30 dB and therefore are not shown in the graphs; Figure 1 1 shows on-silicon microstrip patch antenna using narrow and truncated films;
  • Figure 12 graphs of (a) reflection coefficient and (b) gain of the on-silicon antenna using 25 ⁇ tall narrow and truncated films;
  • Figure 13 shows radiation patterns of the on-silicon antenna using 25 ⁇ tall narrow and truncated films where (a) is the E-plane; (b) is the H-plane where cross- polarization levels are less than -30 dB and therefore are not shown in the graphs;
  • Figure 14 shows on-silicon microstrip patch antenna using narrow line posts
  • Figure 15 shows graphs of (a) reflection coefficient and (b) gain of the on-silicon antenna using 25 ⁇ tall narrow line posts;
  • Figure 16 shows radiation patterns of the on-silicon antenna using 25 ⁇ tall narrow line posts where (a) is the E-plane; (b) is the H-plane where the cross-polarization levels are less than -30 dB and therefore are not shown in the graphs;
  • Figure 17 shows on-silicon microstrip patch antenna using square posts;
  • Figure 18 graphs of (a) reflection coefficient and (b) gain of the on-silicon antenna using 25 ⁇ tall square posts;
  • Figure 19 shows radiation patterns of the on-silicon antenna using 25 ⁇ tall square posts where (a) is the E-plane; (b) is the H-plane where the cross-polarization levels are less than -20 dB and are shown in dot-dash lines; Figure 20 shows on-silicon microstrip patch antenna using a multi-layer design for the top conductor;
  • Figure 21 shows a graph of gain of the on-silicon microstrip patch antenna using a multi-layer design for the top conductor
  • Figure 22 illustrates a fabrication process
  • Figure 23 shows a method of fabricating a passive microwave component.
  • Fig. 1 shows an example of on-silicon transmission line 100 implemented on a narrow dielectric thin film layer 102.
  • the lower metal conductor 104 acts as the ground plane on the silicon wafer 106, the narrow dielectric thin film
  • the characteristic impedance of this transmission line is shown in the graph in Fig. 2 as a function of transmission line width (w) when a 25 ⁇ thick film of a low permittivity polymer with dielectric constant of 3.2 is considered.
  • a wide range of characteristic impedances (10-100 ⁇ ) is possible within a reasonable range of width (25-470 ⁇ ), facilitating implementation of passive microwave components.
  • the attenuation for the narrow film transmission line and the conventional thin film microstrip line are shown in graph in Fig. 3.
  • the substrate is 25 ⁇ thick with dielectric constant of 3.2 and loss tangent of 0.015.
  • This line presents attenuation of 0.1 1 dB/mm at 30 GHz, which is 0.025 dB/mm (i.e., -20%) less than that of the conventional thin film microstrip line. It should be noted that this improvement is achieved based on a change in structural design.
  • the structure 500 consists of dielectric posts 502 (instead of narrow film) that are periodically patterned along the line 504 below transmission line 100.
  • dielectric posts 502 instead of narrow film
  • width of the transmission line 100, thickness of the film, and other parameters posts with different dimensions can be used. In this example, 25 ⁇ thick dielectric posts with dimensions of 100 ⁇ ⁇ 70 ⁇ are considered.
  • the posts 502 are 200 ⁇ far from each other and supposed to have dielectric constant of 3.2 and loss tangent of 0.015 (similar to the previous case).
  • the attenuation for this transmission line is also illustrated in Fig. 3.
  • the improvement is significant, showing that the attenuation is less than 0.08 dB/mm at 30 GHz. This is 0.055 dB/mm less than that of the conventional thin film microstrip line, and 0.03 dB/mm less than that of the narrow film transmission line, corresponding to over 40% and 27% improvements.
  • a slight nonlinear variation in attenuation is realized over the frequency band for the transmission line with dielectric posts 604. This is due to a variation in characteristic impedance of the line and it can be controlled by changing the transmission line width 602a and 602b along the transmission line path 602.
  • An example is shown in Fig. 6 where the line width is periodically varied by 0.3 mm in structure 600.
  • the result for this structure is also shown in Fig. 3.
  • This can be also utilized to achieve stepped impedance filters when the difference between impedances is increased and the line 702 length 702a and 702b is varied as in structure 700 shown in Fig. 7 with the size of the respective posts 704a and 704b.
  • microwave passive components can be designed and implemented on the low-resistivity silicon wafer.
  • microstrip patch antennas are designed at 60 GHz and their performance is compared with the conventional on-silicon patch antenna. All antennas are implemented on a 25 ⁇ -thick dielectric film with dielectric constant of 3 and loss tangent of 0.03.
  • Fig. 8 shows the structure 800 of conventional on-silicon patch antenna 802 which is fed using microstrip line 804. The output results are shown in Figs. 9 and 10. Broadside radiation patterns and -2.5 dBi gain are achieved.
  • Figure 9 shows graphs of (a) reflection coefficient and (b) gain of the on-silicon conventional patch antenna using 25 ⁇ tall films.
  • Figure 10 shows radiation patterns of the on-silicon conventional antenna using 25 ⁇ tall films at 60 GHz.
  • FIG. 1 1 the top conductor 1 102 of structure 1 100 is extended 150 ⁇ beyond the dielectric thin film 1 104.
  • Figs. 12 and 13 show that broadside radiation patterns are achieved, and the antenna gain is now increased to -1 dBi. This is 1 .5 dB larger than that of the conventional patch antenna (previous case). Therefore, with just a simple change in the configuration, considerable increase in the antenna gain is achieved.
  • Figure 12 graphs of (a) reflection coefficient and (b) gain of the on-silicon antenna using 25 ⁇ tall narrow and truncated films.
  • Figure 13 shows radiation patterns of the on-silicon antenna using 25 ⁇ tall narrow and truncated films where (a) is the E-plane; (b) is the H-plane where cross-polarization levels are less than -30 dB and therefore are not shown in the graphs;
  • Fig. 14 shows another configuration in which narrow line posts are used in the structure 1400 where posts 1404 are space along the width of the top conductor 1402 and posts 1406 are spaced along transmission line 1408.
  • the results in Figs. 15 and 16 show that improved characteristics are achieved and the antenna gain is about 2 dBi at 60 GHz.
  • Figure 15 shows graphs of (a) reflection coefficient and (b) gain of the on-silicon antenna using 25 ⁇ tall narrow line posts.
  • Figure 16 shows radiation patterns of the on-silicon antenna using 25 ⁇ tall narrow line posts where (a) is the E-plane; (b) is the H-plane where the cross-polarization levels are less than -30 dB and therefore are not shown in the graphs
  • Figs. 17, 18, and 19 show the structure 1700 and the results for the on-silicon microstrip patch antenna 1702 using square posts 1704.
  • the antenna gain is 4.5 dBi which is 7 dB larger than that of the conventional patch antenna (first antenna example). Similar procedure can be followed to design other types of passive microwave components with improved performance.
  • Figure 18 graphs of (a) reflection coefficient and (b) gain of the on-silicon antenna using 25 ⁇ tall square posts.
  • Figure 19 shows radiation patterns of the on-silicon antenna using 25 ⁇ tall square posts where (a) is the E-plane; (b) is the H-plane where the cross- polarization levels are less than -20 dB and are shown in dot-dash lines;
  • the top conductor can be deposited in multi thin layers instead of one thick layer, as shown in Fig. 20.
  • the dielectric post 2002 has a first metallic layer 2004, a first intermediary dielectric layer 2006, a second metallic layer 2008, a second intermediary dielectric layer 2010 and a third metallic layer 2012. This technique will further increase the efficiency of the components.
  • a three layer design increases the antenna gain to over 5 dBi.
  • About 2% change in the frequency of peak gain is however detected which can be corrected by slightly changing the antenna dimensions.
  • Figure 21 shows a graph 2100 of gain of the on-silicon microstrip patch antenna using a multi-layer design for the top conductor.
  • a simplified microfabrication method is provided here and shown in Fig. 22 and referring to method 2300 of Fig. 23.
  • the process is started by first sputtering 2 ⁇ thick metal with good conductivity can be acceptable such as aluminium or copper 2204 on a low resistivity silicon wafer (as the ground plane) 2202 (2302).
  • photoresist e.g., SU-8
  • the photolithography 2250 is then applied to construct the narrow film substrates or dielectric posts 2208 (2306).
  • the method is efficient for other types of substrates. There are several advantages when these structures are compared with the conventional thin film structures. The dielectric loss and effective dielectric constant are further reduced since a larger portion of the electromagnetic wave travels through the air not the substrate, increasing efficiency and propagation velocity which is necessary for high-speed circuits. More importantly, making via holes for interconnects in RFICs is facilitated or is not considered necessary to connect through the substrate.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Waveguide Aerials (AREA)

Abstract

La présente invention se rapporte à un procédé de construction d'un composant passif à hyperfréquences. Un conducteur métallique est pulvérisé sur une tranche de silicium pour former un plan de masse. Un film diélectrique de résine photosensible est appliqué sur la partie supérieure du conducteur métallique. Une photolithographie est réalisée afin de construire une structure de substrat à l'aide de la résine photosensible. Un conducteur métallique est pulvérisé à travers un masque sur la structure de substrat pour former un conducteur supérieur. Un processus de développement est mis en œuvre afin d'éliminer la résine photosensible non exposée, et de laisser ainsi la résine photosensible exposée entre le conducteur supérieur et le plan de masse. La présente invention a trait également à un composant passif à hyperfréquences qui comprend un conducteur métallique sur une tranche de silicium, ce qui permet de former un plan de masse. Un substrat est déposé sur le conducteur métallique formé au cours de la photolithographie à l'aide d'une résine photosensible, et un conducteur métallique supérieur se situe sur le substrat de film étroit.
PCT/CA2015/050253 2014-03-31 2015-03-31 Lignes de transmission à faible perte sur silicium, et composants à hyperfréquences Ceased WO2015149172A1 (fr)

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US201461972711P 2014-03-31 2014-03-31
US61/972,711 2014-03-31

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109378573A (zh) * 2018-09-10 2019-02-22 天津大学 应用石墨纳米层的叶型天线
WO2020085863A1 (fr) * 2018-10-26 2020-04-30 삼성전자 주식회사 Dispositif électronique ayant un dispositif photo-conducteur comprenant un élément photo-conducteur capable de connecter électriquement une pluralité d'éléments conducteurs
CN112531307A (zh) * 2020-12-01 2021-03-19 中国科学院上海微系统与信息技术研究所 一种带滤波功能的低温传输线
WO2024118937A1 (fr) * 2022-12-01 2024-06-06 Arizona Board Of Regents On Behalf Of Arizona State University Filtres thz quasi-optiques à impédance étagée utilisant des couches diélectriques en métamatériau

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5367308A (en) * 1992-05-29 1994-11-22 Iowa State University Research Foundation, Inc. Thin film resonating device
US5858622A (en) * 1996-07-23 1999-01-12 Wisconsin Alumni Research Foundation Thick metal integrated transmission line fabrication
CA2843415A1 (fr) * 2011-07-29 2013-02-07 University Of Saskatchewan Antennes a resonateur a base de polymere

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5367308A (en) * 1992-05-29 1994-11-22 Iowa State University Research Foundation, Inc. Thin film resonating device
US5858622A (en) * 1996-07-23 1999-01-12 Wisconsin Alumni Research Foundation Thick metal integrated transmission line fabrication
CA2843415A1 (fr) * 2011-07-29 2013-02-07 University Of Saskatchewan Antennes a resonateur a base de polymere

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109378573A (zh) * 2018-09-10 2019-02-22 天津大学 应用石墨纳米层的叶型天线
WO2020085863A1 (fr) * 2018-10-26 2020-04-30 삼성전자 주식회사 Dispositif électronique ayant un dispositif photo-conducteur comprenant un élément photo-conducteur capable de connecter électriquement une pluralité d'éléments conducteurs
US11837779B2 (en) 2018-10-26 2023-12-05 Samsung Electronics Co., Ltd Electronic device having photo conductive device comprising photo conductive member capable of electrically connecting plurality of conductive elements
CN112531307A (zh) * 2020-12-01 2021-03-19 中国科学院上海微系统与信息技术研究所 一种带滤波功能的低温传输线
WO2024118937A1 (fr) * 2022-12-01 2024-06-06 Arizona Board Of Regents On Behalf Of Arizona State University Filtres thz quasi-optiques à impédance étagée utilisant des couches diélectriques en métamatériau

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