WO2015197600A2 - Système de stockage d'énergie électrique composé d'un élément discoïde distinct, élément distinct, son procédé de fabrication et son utilisation - Google Patents

Système de stockage d'énergie électrique composé d'un élément discoïde distinct, élément distinct, son procédé de fabrication et son utilisation Download PDF

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Publication number
WO2015197600A2
WO2015197600A2 PCT/EP2015/064073 EP2015064073W WO2015197600A2 WO 2015197600 A2 WO2015197600 A2 WO 2015197600A2 EP 2015064073 W EP2015064073 W EP 2015064073W WO 2015197600 A2 WO2015197600 A2 WO 2015197600A2
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Prior art keywords
discrete element
disc
shaped discrete
storage system
electrical storage
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Ceased
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PCT/EP2015/064073
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German (de)
English (en)
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WO2015197600A3 (fr
Inventor
Miriam Kunze
Ulrich Peuchert
Nikolaus Schultz
Thorsten Damm
Clemens Ottermann
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Schott AG
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Schott AG
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Priority claimed from DE102015103857.9A external-priority patent/DE102015103857A1/de
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Publication of WO2015197600A2 publication Critical patent/WO2015197600A2/fr
Publication of WO2015197600A3 publication Critical patent/WO2015197600A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • H01M50/10—Primary casings; Jackets or wrappings
    • H01M50/116—Primary casings; Jackets or wrappings characterised by the material
    • H01M50/117—Inorganic material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/078—Glass compositions containing silica with 40% to 90% silica, by weight containing an oxide of a divalent metal, e.g. an oxide of zinc
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/095—Glass compositions containing silica with 40% to 90% silica, by weight containing rare earths
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/097—Glass compositions containing silica with 40% to 90% silica, by weight containing phosphorus, niobium or tantalum
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/11—Glass compositions containing silica with 40% to 90% silica, by weight containing halogen or nitrogen
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/04—Construction or manufacture in general
    • H01M10/0436—Small-sized flat cells or batteries for portable equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/058—Construction or manufacture
    • H01M10/0585—Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • H01M50/10—Primary casings; Jackets or wrappings
    • H01M50/102—Primary casings; Jackets or wrappings characterised by their shape or physical structure
    • H01M50/11—Primary casings; Jackets or wrappings characterised by their shape or physical structure having a chip structure, e.g. micro-sized batteries integrated on chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • H01M50/10—Primary casings; Jackets or wrappings
    • H01M50/116—Primary casings; Jackets or wrappings characterised by the material
    • H01M50/124—Primary casings; Jackets or wrappings characterised by the material having a layered structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • H01M50/10—Primary casings; Jackets or wrappings
    • H01M50/116—Primary casings; Jackets or wrappings characterised by the material
    • H01M50/124—Primary casings; Jackets or wrappings characterised by the material having a layered structure
    • H01M50/1245—Primary casings; Jackets or wrappings characterised by the material having a layered structure characterised by the external coating on the casing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/052—Li-accumulators
    • H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • H01M50/10—Primary casings; Jackets or wrappings
    • H01M50/131—Primary casings; Jackets or wrappings characterised by physical properties, e.g. gas permeability, size or heat resistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • H01M50/10—Primary casings; Jackets or wrappings
    • H01M50/183—Sealing members
    • H01M50/186—Sealing members characterised by the disposition of the sealing members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M6/00—Primary cells; Manufacture thereof
    • H01M6/40—Printed batteries, e.g. thin film batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to an electrical storage system with a disk-shaped discrete element, a discrete disk-shaped element, a method for the same
  • Electromobility discussed, but have also been used for some years in portable devices such as smartphones or laptops. These conventional rechargeable lithium-ion batteries are characterized in particular by the use of organic, solvent-based liquid electrolytes. These are flammable and therefore lead to safety concerns regarding their unlimited use.
  • the next step is a
  • Solid state electrolyte is.
  • the anode material used is in particular metallic lithium. If the two arresters are connected in an electrically conductive manner, lithium ions migrate through them in the charged state
  • Solid state ion conductor from the anode to the cathode which has a flow of current from the cathode to the anode through the electrical conductive connection of the two arresters result.
  • the application of an external voltage can force the migration of the ions from the cathode to the anode, thereby charging the battery.
  • Another thin-film memory element is described by way of example in US 2001/0032666 A1 and likewise comprises a substrate onto which different functional layers
  • Deposited layers typically have layer thicknesses in the range of 20ym or less, typically less than 10 ym or even less than 5 ym; as the total thickness of the
  • Layer structure can be assumed to be 100 ym or smaller.
  • Thin film memory elements are exemplified by rechargeable lithium-based thin film memory elements and SuperCaps; however, the invention is not limited to these
  • Thin film memory elements e.g. rechargeable and / or printed thin film cells are used.
  • Thin film memory element such as lithium or certain lithium compounds.
  • Encapsulation function is exercised by a coating or a system of different coatings, which in the context of the overall structure of the battery even more
  • Functions can fulfill.
  • Thin-film memory element in particular in so-called annealing or tempering steps, which is necessary for the formation of lithium intercalation suitable crystal structures, come to an undesirable side reaction of the mobile lithium ions with the substrate, since lithium has a high mobility and in common
  • Substrate materials can easily diffuse. Another problem is with
  • substrate materials The prior art describes a variety of different substrate materials such as
  • US 2001/0032666 AI describes a capacitor-like energy storage, which may also be a lithium-ion battery.
  • substrate materials are mentioned here among other semiconductors.
  • US 6906436 B2 describes as a possible substrate materials a variety of possibilities, such as metals or metal coatings, semiconducting materials or insulators such as sapphire, ceramics or plastics. Different geometries of the substrate are possible.
  • US Pat. No. 7,449,442 B2 describes as substrate materials, inter alia, metals, semiconductors, silicates and glass as well as inorganic or organic polymers.
  • US 7211351 B2 mentions as substrates metals, semiconductors or insulating materials as well as combinations thereof.
  • US 2008/0001577 AI names as substrates semiconductors, metals or plastic films.
  • EP 2434567 A2 mentions as substrates electrically conductive materials such as metals, insulating materials such as
  • Ceramics or plastics and semiconducting materials such as silicon and combinations of semiconductors and conductors or more complex structures for adjusting the thermal expansion coefficient.
  • US 2010/0104942 AI describes as relevant in practice substrate materials only substrates of metals or metal alloys with a high
  • metal alloys as well as dielectric materials have various difficulties: For example, dielectric materials are usually brittle and can not be used in cost roll-ro-roll processes, while metals or Metal alloys tend to do so during the
  • Oxide formation comes.
  • a circumvention of the required for example in the above-mentioned US 2010/0104942 AI high temperature load capacity of the substrate is discussed.
  • a circumvention of the required for example in the above-mentioned US 2010/0104942 AI high temperature load capacity of the substrate is discussed.
  • Process conditions Use substrates with temperature ratings of 450 ° C or below. Prerequisites for this, however, are deposition processes in which there is heating of the substrate and / or optimization of the sputter gas mixture of O 2 and Ar and / or the
  • US 2012/0040211 A1 discloses as substrate a glass film which is at most 300 ⁇ m thick and has a surface roughness of not greater than 100 ⁇ . This low
  • Borosilicate glass or soda-lime glass Specify to
  • Thickness variation of the substrate are also not made here.
  • Memory element be as inert as possible and the deposition of error-free as possible layers with good
  • Thin-film memory elements are difficult to integrate, so that it is cheaper from a process engineering point of view, a substrate with a correspondingly high
  • composition concerns one of the possible handling methods of ultra-thin glass.
  • This so-called carrier solution is to temporarily fix ultra-thin glass on a substrate before or during the coating process or the transfer process steps. This can be done either with electrostatic forces or by using an organic removable
  • Adhesive In particular, in the latter case, by suitable choice of the substrate or the carrier, which are usually made of the same material,
  • the debonding ie the detachment of the substrate from the carrier.
  • the debonding often leads to the occurrence of torsional stresses in the substrate, whereby these stresses also affect those on the substrate
  • the object of the invention comprises the provision of an electrical storage system which includes a disk-shaped discrete element, the disk-shaped discrete element and its manufacture and use.
  • the present invention also has the object, an electrical storage element, in particular a
  • the object of the invention comprises the provision of a disc-shaped element for use in an electrical storage element and its manufacture and use.
  • the disc-shaped discrete element should have a sufficient thermal stability of> 300 ° C, preferably> 400 ° C, coupled with a sufficient stability against contamination by battery components, to a high barrier to moisture and to the manufacturing processes and needs of each adapted to specific cell designs
  • the substrate is also intended to contribute to good adhesion of applied layers, i. In particular, have a suitable coefficient of expansion with respect to the deposition of the nearest layer, usually the LCO.
  • the substrate or superstrate of the present invention is also a high resistance to the attack of alkali metals or ions of
  • Alkali metals, in particular lithium, have.
  • the object of the invention can be surprisingly easily solved already in that in a
  • a disc-shaped discrete element which has a high resistance to attack of alkali metals or ions of alkali metals, in particular lithium, wherein the disc-shaped discrete element has a composition which is characterized by a content of at most 2 wt .-% Ti0 2 , preferably of at most 0.5 wt .-% TiC> 2, and most preferably TiC> 2-free.
  • the at least one disk-shaped discrete element having a low content of T1O2 is lithium-containing or comprises lithium.
  • Lithium is on or in the bulk material. Discrete disk-shaped elements in which lithium is preferably contained in the bulk material are considered to be lithium-containing is. In this case, lithium in the form of an oxide or as a metal, for example, on the surface of the
  • the disc-shaped discrete element having a low content of T1O 2 has a content of L1 2 O of 7.0% by weight or less, preferably of 5.2% by weight or less, and more preferably of 2, 5% by weight or less, more preferably from 0.5% by weight or less, and most preferably from 0.2% by weight or
  • At least one surface of the at least one disc-shaped discrete element is designed so that it is as inert as possible with respect to surfaces coming into contact with this surface and / or reduced permeable and / or impermeable.
  • the at least one surface is formed as a barrier or barrier layer.
  • the at least one surface is formed as a barrier or barrier layer.
  • Barrier formed as a barrier to the diffusion of metals.
  • the barrier layer is opposite to the diffusion of
  • the barrier layer is preferably formed by doping or overdoping with at least one alkali metal and / or alkaline earth metal.
  • the barrier effect of the at least one surface is given to lithium.
  • the at least one disk-shaped discrete element comprises at least one oxide or a mixture or compound of a plurality of oxides.
  • the disk-shaped discrete element contains Si0 2 as an oxide.
  • the disc-shaped discrete element has a composition which is characterized by a content of at most 2 wt .-% Ti0 2 , preferably of at most 0.5 wt .-% Ti0 2 , and most preferably Ti0 2 ⁇ is free.
  • the disc-shaped discrete element of the present invention preferably has the following composition in parts by weight:
  • the disk-shaped discrete element has a total thickness variation (ttv) in the range of ⁇ 25 ym, preferably ⁇ 15 ym, more preferably ⁇ 10 ym and most preferably ⁇ 5 ym based on the wafer or substrate size used, based on the wafer or substrate sizes in the range of> 100 mm diameter, in particular at a lateral dimension of 100 mm -100 mm, preferably based on the
  • disk-shaped means a shaped body in which the expansion of the element in a spatial direction is at least halfway
  • disc-shaped discrete element is essential for maintaining comparable quality from cell to cell.
  • Thin-film batteries are usually manufactured at wafer level with or without masking and then cut out. With insufficient thickness constancy, cells on a wafer, or at any rate from wafer to wafer, may have different thicknesses and thus specifications, e.g. with regard to weight / energy density. This is especially true
  • Thickness variance costs can be saved in the quality inspection or production committee can be avoided.
  • Composition is specifically adjustable.
  • This targeted transmission makes it possible to perform a series of process steps simply by treatment with electromagnetic radiation, for example
  • Adhesive layers can be solved particularly effectively,
  • the disc-shaped discrete element according to the invention has a thickness not greater than 2 mm, preferably less than 1 mm, particularly preferably less than 500 ⁇ m and very particularly preferably less than or equal to 200 ⁇ m. Most preferred is a substrate thickness of at most 100 ym.
  • the disk-shaped discrete element has a water vapor
  • the disk-shaped discrete element has an electrical resistivity at a temperature of 350 ° C and an alternating current with a frequency of 50 Hz of greater than 1.0 -10 6 ohmcm.
  • the disk-shaped discrete element further preferably comprises a maximum temperature resistance or a maximum load temperature of at least 300 ° C., preferably of at least 400 ° C. and more preferably of at least 500 ° C., and by a linear thermal expansion coefficient in the range of 2.0 ⁇ 10 -6 / ⁇ to 10 x 10 "6 / ⁇ , preferably of 2.5 10" 6 / K to 9.5 x 10 "6 / ⁇ and particularly preferably from 3.0 ⁇ 10 -6 / ⁇ to 9.5 ⁇ 10 -6 / ⁇ . It has been found that particularly good film qualities can be obtained in a thin-film memory element when thermal stress between the maximum temperature in ° C Max 9 and the linear
  • Expansion coefficient is the following relationship: 600 -10 "6 ⁇ 9 Max x ⁇ 8000 x 10 " 6 , particularly preferably
  • the linear thermal expansion coefficient is given in the range of 20-300 ° C, unless otherwise stated.
  • the terms and (2o-3oo> are used interchangeably in the context of the disclosure of this invention.
  • In the above-value is the nominal average coefficient of thermal expansion in accordance with ISO 7991 which is determined in a static measurement.
  • the maximum loading temperature for 9 Ma x is given to the Under this application, a temperature at which the
  • organic glasses also have the decomposition temperature
  • the maximum load temperature can be approximately indicated by the melting temperature, unless the metal or the metal alloy reacts below the melting temperature in one
  • the transformation temperature T g is determined by the intersection of the tangents to the two branches of
  • this is at least one surface as a barrier to alkali and / or
  • this metal is lithium.
  • this barrier layer formed on at least one surface of the disc-shaped element is doped or overdoped with an alkali and / or alkaline earth metal such as, for example Lithium formed. It can be seen that even low contents of lithium can prevent or reduce the diffusion of this element from the layer materials of the electrical storage element, such as, for example, LiPON or metallic lithium into the disc-shaped discrete element.
  • the disk-shaped discrete element is preferably formed in such a way that the disc-shaped discrete element contains lithium, it being possible for the lithium to be added as precursor during its preparation or else to be introduced later into the disc-shaped discrete element, for example by a diffusion process.
  • the disk-shaped discrete element is made of glass, lithium may already be added as a starting material in the synthesis, or an originally lithium-free glass may be formed by a subsequent diffusion process, for example by ion exchange in an exchange bath during a process of chemical curing of the glass to be introduced.
  • a disk-shaped discrete element already containing lithium in the bulk composition can also subsequently be further lithium by a suitable discrete element
  • the lithium in one embodiment of the invention can be uniform over the entire volume of the discrete
  • the concentration of lithium over the cross section of the disc-shaped discrete element is variable, that is, for example, the lithium concentration decreases towards the surfaces of the disc-shaped discrete element, so that thus a concentration gradient of the lithium distribution in disc-discrete Element is present.
  • Such a gradient can, for example, according to a
  • Ion exchange process can be achieved in the subsequent lithium in a disc-shaped discrete element
  • lithium ions from the electrolyte of the battery system can penetrate into contact with the disc-shaped discrete element and damage it.
  • a diffusion of alkali and / or alkaline earth ions from the disc-shaped discrete element takes place in the layer system of the battery.
  • a doping or overdoping with lithium must be made. The additional amount of alkali and / or alkaline earth ions in the disc-shaped discrete element, which are not lithium, but should not be too large, so that they are not in the
  • Penetrate battery layers Basically, that is
  • the samples are placed in liquid lithium nitrate (L1NO3) for 10 minutes.
  • the molten salt has a temperature of about 380 ° C. Subsequently, the samples
  • the lithium metal sample has a thickness of 100 ⁇ m and an area of 3 mm -3 mm. This was pressed onto samples of size 20mm -20mm in a glove box (glove box) and then airtight and welded under vacuum.
  • the disk-shaped element according to the invention is constructed according to a further embodiment of the invention from at least one oxide or a mixture or compound of oxides.
  • this at least one oxide is SiO 2.
  • the disk-shaped element is made of glass.
  • glass refers to a material which is essentially inorganic and consists predominantly of compounds of metals and / or semimetals with elements of groups VA, VIA and VIIA of the Periodic Table of the Elements, but preferably with oxygen, and this is characterized is characterized by an amorphous, ie not periodically ordered three-dimensional state and a specific electrical resistance at a temperature of 350 ° C and an alternating current with a frequency of 50 Hz of greater than 1.0 -10 6 ohmcm.
  • amorphous material LiPON used as a solid-state ion conductor.
  • the disc-shaped element according to the invention is obtained according to a further embodiment of the invention by a melting process.
  • the disk-shaped element is disc-shaped in a shaping process subsequent to the melting process.
  • This shaping can be directly connected to the melt (so-called
  • Hot forming it is also possible for a solid, essentially unshaped body to be obtained first, which is converted into a disk-shaped state only in a further step by renewed heating and mechanical deformation.
  • the shaping of the disk-shaped element takes place by means of a hot-forming process, in one embodiment of the invention it is a drawing process
  • the disc-shaped discrete element can in a
  • Energy storage can be used. Also possible according to yet another embodiment of the invention is the use of the disc-shaped discrete element to cover a structure of functional layers of an electrical
  • the superstrat itself can also act as the outermost layer facing the environment each area or article covered thereby, such as the outermost layer of an electrical storage element.
  • compositions according to the invention disc-shaped
  • Refining agent to 0 to 1 wt .-%, for example SnÜ2, CeC> 2, AS2O 3 , Cl-, F-, sulfates may be included.
  • composition of the disk-shaped discrete element is further exemplified by the following
  • composition in% by weight isobutyl
  • refining agents may be present, the sum of this element is not more than 2 wt .-%.
  • composition of the disk-shaped discrete element is further exemplified by the following
  • composition in% by weight isobutyl
  • composition of the disk-shaped discrete element is further exemplified by the following
  • composition in% by weight isobutyl
  • composition of the disk-shaped discrete element is further exemplified by the following
  • composition in% by weight isobutyl
  • Embodiment 6 Yet another disc-shaped discrete element is exemplified by the following composition in weight percent:
  • Embodiment 12 Another disk-shaped discrete element is exemplified by the following composition in weight%:
  • a further disc-shaped discrete element is exemplified by the following composition in wt%:
  • titanium for example, titanium, alkali ions, in particular also
  • Comparative Example 2 contains as the sum of the content of alkali oxides 14.89 wt .-% to 3.9 wt .-% Ti0 2 and is compared to the contact with lithium metal compared to Comparative Example 3, the sum of the content
  • Alkalioxiden contains only 4.0 wt .-% to 2.5 wt .-% T1O 2 , improved in its stability.
  • disc-shaped discrete element is in the presence of other alkali ions except lithium, the stability to lithium metal improved overall (see Example 24) and is even more stable by the addition of lithium (see the embodiments 25 and 21).
  • a content of less than or equal to 2.0 wt .-% T1O 2 is to achieve the desired Inertness of the disc-shaped discrete element against contact with lithium metal still permissible.
  • the disk-shaped discrete element thus has a composition which is characterized by a content of at most 2 wt .-% Ti0 2 , preferably
  • the disc-shaped discrete element is formed from a glass whose composition is characterized by a
  • disk-shaped discrete element may be such that any existing other alkali metal oxides are proportionately reduced in the composition of the disc-shaped discrete element, so that the content of the other components remains the same relative to the alkali metal oxides, or the L1 2 O is additive to the other components added so that their share is reduced accordingly.
  • L1 2 O is contained in a disk-shaped discrete element, is its content at least 0.1 wt .-%, and is still smaller than 7.0 wt .-%, preferably less than 5.2 wt .-%, more preferably less than 2.5% by weight, most preferably less than 0.5% by weight, and most preferably less than 0.2% by weight.
  • the disc-shaped discrete element is formed from a glass whose composition is characterized except for trace amounts of impurities of T1O 2 and further characterized by a content of Li 2 0 of 7.0 wt .-% or less, preferably from 5.2 % By weight or less, more preferably from 2.5% by weight or less, more preferably from 0.5% by weight or less, and most preferably from 0.2% by weight or less, the
  • L1 2 O Content of L1 2 O is at least 0.1 wt .-%. Furthermore, it is possible that the inorganic,
  • Bias in particular a chemical bias.
  • the chemical bias of a glass is obtained by an ion exchange in a transfer bath. If a toughened glass is used, this is prior to the application of functional layers of an electrical
  • Storage system characterized in that it has a chemical bias, which is characterized by a thickness of the ion-exchanged layer L DO L of at least 10 ym, preferably at least 15 ym and on
  • Compressive stress on the surface (o C s) of the glass of preferably at least 100 MPa, preferably at least 200 MPa, more preferably at least 300 MPa and most preferably 480 MPa or more.
  • Functional layers of an electrical storage system may, depending on the process, result in a change in the state of stress of the glass used as the substrate. It has surprisingly been found that the bias of
  • Glass is not set to zero, but rather a residual stress is maintained in the glass, so that
  • the present in the final energy storage glass as a substrate may be characterized in that it is present as at least partially chemically tempered glass, wherein the at least partially chemical
  • Preload is obtained by an ion exchange in a transfer bath and a subsequent thermal
  • L DO L thickness of the ion-exchanged layer
  • the thickness of the ion-exchanged layer before thermal stress is less than the thickness of the
  • thermal load is greater than the compressive stress on the glass surface after thermal stress.
  • the chemical bias of the glass is obtained in a swath containing lithium ions.
  • a swath containing lithium ions for example, an exchange bath with various alkali ions, eg potassium and small to very small amounts of lithium.
  • a step-shaped process, eg exchange with potassium and a quick further exchange with lithium-containing bath can be carried out.
  • Fig. 1 shows a schematic representation of a
  • Fig. 2 shows a schematic representation of a
  • FIG. 1 schematically shows an electrical storage system 1 according to the present invention. It comprises a disc-shaped discrete element 2, which is used as a substrate. Applied to the substrate is a
  • the two discrete layers 3 for the cathode and 4 for the anode are initially applied to the disc-shaped discrete element 2.
  • Such arrester layers are usually a few micrometers thick and consist of a metal, for example of copper, aluminum or titanium.
  • the cathode is formed from a lithium transition metal compound, preferably an oxide, for example, LiCoC> 2 LiMnC> 2 or LiFePC ⁇ .
  • the electrolyte 6 is applied, this electrolyte is in the case of the presence of a lithium-based thin-film battery is usually LiPON, a compound as lithium with oxygen,
  • the electrical includes Storage system 1, an anode 7, which may for example be lithium-titanium oxide or even order
  • the anode layer 7 overlaps
  • the battery 1 comprises an encapsulation layer eighth
  • Storage system 1 is understood in the context of the present invention, a material which prevents the attack of fluids or other corrosive materials on the electrical storage system 1 or strong
  • Fig. 2 shows the schematic illustration of a
  • a shaped body in the context of the present invention is then referred to as a disk-shaped or disk if its extent in a spatial direction is at most half as large as in the other two spatial directions.
  • a tape in the present invention is referred to as tape when the following relationship exists between its length, its width and its thickness: its length is at least ten times greater than its width and this in turn is at least twice as large as its thickness.
  • Fig. 3 shows the breaking edge of a disk-shaped
  • Fig. 4 shows the surface of a disk-shaped
  • Fig. 5 shows the surface of a disk-shaped

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
  • Glass Compositions (AREA)

Abstract

L'invention concerne un système de stockage d'énergie électrique présentant une épaisseur inférieure à 2 mm, qui contient au moins un élément discoïde distinct, ledit élément discoïde distinct présentant une haute résistance à l'attaque par les métaux alcalins ou les ions des métaux alcalins, en particulier du lithium, ledit élément discoïde distinct présentant une faible teneur en TiO2 , la teneur en TiO2 étant de préférence inférieure à 2,0 % en poids, de préférence encore inférieure à 0,5 % en poids, et ledit élément étant préférence exempt de TiO2.
PCT/EP2015/064073 2014-06-23 2015-06-23 Système de stockage d'énergie électrique composé d'un élément discoïde distinct, élément distinct, son procédé de fabrication et son utilisation Ceased WO2015197600A2 (fr)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
DE102014008934.7 2014-06-23
DE102014008934 2014-06-23
DE102014010734 2014-07-23
DE102014010735 2014-07-23
DE102014010735.3 2014-07-23
DE102014010734.5 2014-07-23
DE102014117633.2 2014-12-01
DE102014117633 2014-12-01
DE102015103857.9 2015-03-16
DE102015103857.9A DE102015103857A1 (de) 2014-12-01 2015-03-16 Miniaturisiertes elektronisches Bauelement mit verringerter Bruchgefahr sowie Verfahren zu dessen Herstellung
DE102015103863.3 2015-03-16
DE102015103863 2015-03-16

Publications (2)

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WO2015197600A2 true WO2015197600A2 (fr) 2015-12-30
WO2015197600A3 WO2015197600A3 (fr) 2016-03-17

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Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4168351A (en) * 1978-02-10 1979-09-18 P. R. Mallory & Co., Inc. Stabilized glass-to-metal seals in lithium cell environments
DE3128863A1 (de) * 1981-07-22 1983-02-10 Varta Batterie Ag, 3000 Hannover Lithium-zelle mit glasdurchfuehrung
JP2004269347A (ja) * 2003-02-18 2004-09-30 Nippon Electric Glass Co Ltd ガラス組成物
EP2252555A2 (fr) * 2008-03-03 2010-11-24 Saint-Gobain Glass France Procede d'elaboration de verre
KR101376127B1 (ko) * 2009-02-23 2014-03-19 니폰 덴키 가라스 가부시키가이샤 리튬 이온 전지용 유리 필름
EP2234188A1 (fr) * 2009-03-27 2010-09-29 Koninklijke Philips Electronics N.V. Appareil de batterie
DE102012207424B3 (de) * 2012-05-04 2013-06-20 Schott Ag Lithiumionenleitende Glaskeramik, Verfahren zur Herstellung einer Lithiumionenleitenden Glaskeramik, Ionenleiter und Verwendung des Ionenleiters

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