WO2016005166A1 - Circuit électronique de puissance redondant présentant des montages série en parallèle comprenant semi-conducteur de puissance et coupe-circuit - Google Patents

Circuit électronique de puissance redondant présentant des montages série en parallèle comprenant semi-conducteur de puissance et coupe-circuit Download PDF

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Publication number
WO2016005166A1
WO2016005166A1 PCT/EP2015/063802 EP2015063802W WO2016005166A1 WO 2016005166 A1 WO2016005166 A1 WO 2016005166A1 EP 2015063802 W EP2015063802 W EP 2015063802W WO 2016005166 A1 WO2016005166 A1 WO 2016005166A1
Authority
WO
WIPO (PCT)
Prior art keywords
circuit
power electronics
redundant
semiconductor
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2015/063802
Other languages
German (de)
English (en)
Inventor
Markus Pfeifer
Marvin TANNHÄUSER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of WO2016005166A1 publication Critical patent/WO2016005166A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08148—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
    • H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
    • H02H7/122—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. DC/AC converters
    • H02H7/1225—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. DC/AC converters responsive to internal faults, e.g. shoot-through
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/325—Means for protecting converters other than automatic disconnection with means for allowing continuous operation despite a fault, i.e. fault tolerant converters

Definitions

  • the invention relates to an at least one hogurlei ⁇ ter comprehensive power electronics circuit, for example an inverter circuit, and an inverter, and whose
  • semiconductor devices - By too high currents or too high frequencies or by defects in the semiconductor layers even at not too high currents and not too high frequencies power semiconductors and power semiconductor switches - collectively referred to as semiconductor devices - can be destroyed. In the case of such a destruction of a semiconductor component is usually the entire function of a
  • the semiconductor device may be conductive (plated through) or non-conductive (open) due to the defect.
  • To detect a particular condition of a defective semiconductor device is a very fast detection and Ansteue- is tion required to an optionally due to a De ⁇ Anlagens permanently conducting semiconductor device using white ⁇ more excellent switch, thus for example either further semiconductor components in the form of power semiconductor switches or mechanical switch, for example contactors, to be disconnected from the respective system.
  • a protective device increases the number of necessary components and he ⁇ increases the space required in each case, in the case of shooters even many times.
  • the power electronics circuit comprises in a parallel connection at least two identical or at least similar power semiconductors, wherein a fuse is connected in series with each power semiconductor. Due to the parallel connection, the power electronics circuit ⁇ tion includes the respective power semiconductor in redundant form, so that the power electronics circuit can be referred to collectively as a redundant power electronics circuit.
  • the name of the encompassed by the power electronics circuit power semiconductor means that it is in each case identical power ⁇ types of semiconductors to be equal or at least similar, so for example each to
  • the semiconductor components connected in parallel in the redundant power electronic circuit have their own fuse assigned in each parallel branch, in particular a fuse in the form of a fuse. Each fuse is sized so that it is automatically separated from the other still-functioning semiconductor devices in a resulting due to a short circuit fault ⁇ a semiconductor device, short-circuit current and data to the circuit can be operated.
  • the parallel-connected semiconductor components themselves are preferably dimensioned so that in case of failure of one or more semiconductor devices, the remaining, still functioning semiconductor components in combination each have a required current carrying capacity, so that the respective
  • Load current can continue to flow over the remaining semiconductor devices and thus the overall functionality of the ⁇ particular circuit is ensured. In the event that the current carrying capacity of the remaining semiconductor devices for the intended rated current is not sufficient, the respective circuit can still be operated at least with reduced power.
  • the advantage of the invention is that parallel switching means of the patent and a defective semiconductor device can be automatically disconnected from the remaining circuitry of the present in each parallel branch fuse and operation of the circuit and its original functionality is further ensured Anson ⁇ th.
  • the further function is optionally ensured without restrictions. At least the other function with reduced power is guaranteed.
  • EP 0 989 611 A discloses an approach in which a short-circuit current flowing due to the defect of a semiconductor device is used in order to achieve a desired state in view of the defect. There, the defective semiconductor component by melting a special Lei layer in a defined short circuit. In the approach according to the invention, however, a short circuit is to be avoided and by means of the parallel circuit and the fuse present in each branch takes place at a defective semiconductor device and then flowing short-circuit current triggering the fuse of each affected parallel branch, which eliminates the short circuit existing due to the defect becomes.
  • Advantageous embodiments of the invention are the subject of the dependent claims.
  • the references used in this case point to the further development of the subject of the Hauptanspru ⁇ ches by the features of the respective sub-claim.
  • Circuits in accordance with the approach proposed here are particularly suitable for applications in which a high level of fail-safety is or even has to be guaranteed, for example in drives of electric or hybrid electric vehicles, rail vehicles and drives for use in the process industry. , Production and energy technology.
  • the power semiconductors switches in the form of IGBTs, MOSFETs or the like are correspondingly in the case of the parallel-connected power semiconductors.
  • Such power semiconductor switches are electronic
  • a redundant power electronics circuit with derar- term power semiconductor switches such as IGBTs, each having a gate terminal, a collector terminal and emitter terminal ei ⁇ NEN, are within the scope of the parallel circuit ⁇ one hand, the collector terminals and the
  • the gate terminals merged to a common gate terminal of the redundant cruelektro ⁇ nikscrien.
  • the control of all encompassed by the power electronics circuit and parallel power semiconductor switch is thus effected via the one central gate of the power electronics scarf ⁇ tion.
  • the power electronics circuit itself thus acts as a single power semiconductor switch and, just like the latter, is connected and controllable within a surrounding circuit.
  • a current carrying capacity of each individual power semiconductor switch encompassed by the parallel circuit is chosen such that, in the event of a defect of a power semiconductor switch or more than one power semiconductor switch, the remaining one Leis ⁇ semiconductor switch or the remaining power semiconductor switch having a suffi- for an expected load current sponding current carrying capacity or have.
  • the power electronics circuit can continue to operate also in case of failure of one or more power semiconductor switches without restrictions, so that for example there is no reduction of the load current is necessary and, for example, at a drive having a converter with at least ei ⁇ ner such power electronics circuit results not reduced torque , b
  • At least one bonding wire acts as a fuse in each parallel branch.
  • a monitoring device associated therewith or included therein and means for detecting a terminal voltage and a terminal current of the power electronics circuit are provided, wherein by means of the monitoring device measured values for terminal voltage and terminal current with predetermined or predeterminable expected values are comparable and being dependent from the result of the comparison, an output signal can be output.
  • Means egg ⁇ ner such a monitoring device is automatically occurring in operation failures of one or more power semiconductor ⁇ recognizable and by means of a dispensable by the surveil ⁇ monitoring means output signal, for example, a display element, for example a light emitting diode controlled.
  • a display element makes a user of the power electronics circuit or of a circuit or a device with a plurality of such power electronics circuits aware of the defect and, especially in the case of several power electronics circuits, makes it easy to localize the affected power electronics circuit.
  • a power electronics circuit of the type described here and below is also particularly suitable for use in a converter, in particular a converter in the form of a rectifier, inverter and frequency converter.
  • the invention is also an inverter with at least one redundant power electronics circuit of the type described here and below.
  • an inverter with at least one half-bridge circuit two power electronics circuits connected in series in the or each half-bridge circuit of the type described here and in the following are provided.
  • a half-bridge circuit with electronically controllable switches usually only one or the other electronic switch is always activated.
  • a power electronics circuit functioning as an electronic switch of the type described here and below results in a short-circuit current across the respective half-bridge, so that a triggering of the fuse assigned to the power semiconductor concerned can be expected can.
  • the power semiconductor affected by the defect is separated from the overall circuit, ie the converter circuit.
  • the function of the affected half-bridge is retained. As a result, the function of the converter circuit as a whole is maintained and, for example, a drive with a converter circuit also remains in operation.
  • the power electronics circuit proposed here and individual or combined embodiments thereof are not limited to use in the field of power electronics, so that the invention is generally also a circuit with the features described herein and below and advantageously ensures increased reliability of a surrounding overall circuit.
  • FIG. 5 shows further embodiments of the circuit according to FIG. 1,
  • FIG 6 shows a half-bridge circuit with two sub-circuits shown in FIG 1 and
  • FIG 7 shows a circuit according to FIG 1 with one of these zugeord ⁇ Neten monitoring device.
  • FIG. 1 shows two semiconductor components 10, namely two so-called IGBTs (IGBT1, IGBT2), more precisely two IGBTs, each having an antiparallel freewheeling diode, comprehensive power electronics circuit 12, which is referred to below as circuit 12 for short.
  • the two half ⁇ conductor devices 10 are connected in parallel within the circuit 12, and in each parallel branch 14 is connected in series with the respective gene semiconductor device 10 is a fuse 16 (Fl, F2).
  • Each IGBT included in the circuit 12 comprises a gate, a collector and an emitter terminal in a manner known per se. Due to the parallel ⁇ circuit of the IGBTs used here as an example of basically any semiconductor devices 10, the scarf ⁇ device 12 itself also has a gate terminal 20, a collector terminal 22 and an emitter terminal 24.
  • the circuit 12 with at least two IGBTs connected in parallel can thus be connected and controlled just like a single IGBT. For a respective surrounding circuit, for example a converter circuit, it does not matter if a individual IGBT or a circuit 12 of the type shown in Figure 1 is driven.
  • each parallel branch 14 comprises a semiconductor component 10 and a fuse 16 connected in series therewith.
  • the parallel branches 14 of the circuit 12 are accordingly functionally identical and the circuit 12 overall realizes the function of one of the semiconductor components 10 placed in all parallel branches.
  • the parallel connection of the semiconductor components 10 causes redundancy of the semiconductor components 10. In the case of a defect of one of the semiconductor devices 10 such that the semiconductor device 10 becomes conductive and loses its actual function, a current, for example a short-circuit current, permanently flows through the respective parallel branch 14 the defective semiconductor device 10.
  • the resulting circuit 12 may be referred to as a redundant IGBT or as a redundant IGBT with increased reliability, for example in the case of IGBTs as semiconductor components 10 become.
  • the function of the circuit 12 as a whole is identical to the function of each of the at least two parallel branches 14 included individual semiconductor device 10, so that the circuit 12 acts as a whole as a single IGBT. By this function of the circuit 12 is maintained even with a defect of one of the parallel-connected semiconductor devices 10 or possibly more such semiconductor devices 10, the increased reliability is guaranteed.
  • diodes (HL1, HL2 .. HLn) are shown as a further example ge ⁇ shows according to the procedure here ⁇ chosen approach Redundant semiconductor devices 10th
  • the illustration in FIG 4 shows a symbolically illustrated in the form of a conventional switch switchable semiconductor component 10 (HL1, H2 .. HLn) to the applicability of the approach proposed here for reason ⁇ additionally any semiconductor devices 10 and expressly for redundant execution of non underlined for use in the field of power electronics semiconductor devices 10 again.
  • FIG. 5 illustrates, it is also not important how the series connection of one (switchable or non-switchable) semiconductor component 10 (HL1, H2..HLn) and one fuse 16 (F1, F2, .. Fn) in the individual parallel branches 14 is realized.
  • HL1, H2..HLn one semiconductor component 10
  • F1, F2, .. Fn fuse 16
  • FIGS. 1 to 4 a placement of the fuses 16 at an upper contact point of the respective semiconductor component 10 has been shown.
  • FIG. 5 shows an alternative and equivalent embodiment. form with at the lower contact point of the semiconductor devices 10 placed fuses 16th
  • the illustration in Figure 6 is a half-bridge circuit (half-bridge) 30, as for example in an output stage of an inverter for driving a polyphase machine ver ⁇ reversible.
  • the half-bridge 30 is shown to include two formwork ⁇ obligations 12 according to FIG 1, each with two IGBTs (IGBT1, IGBT2, IGBT3, IGBT4). In principle, more than two IGBTs are also possible for each circuit 12 according to FIG. 2, FIG. 4 and FIG. 5.
  • Each of the two circuits 12 is hereinafter referred to as redundant IGBT.
  • Short-circuit current i K s triggers this fuse 16 (F2).
  • the short-circuit current i K s divides the here two parallel branches 14 and to their respective Si ⁇ fuses 16 (F3, F4) does not trigger.
  • the fuse 16 (F2) in exactly the parallel branch 14 with the defective half ⁇ semiconductor component 10 (IGBT2) has tripped, the defective semiconductor device is 10 (IGBT2) separated from the rest of the circuit 12, 30, as shown on the right side of depicting ⁇ ment in FIG 6 is shown. The further operation of the half-bridge circuit 30 is thus still possible despite the failed semiconductor component 10.
  • a fuse or fuses 16 comes in all the embodiments described here suitably dimensioned, for contacting the respective semiconductor device 10 be ⁇ voted bonding wires (not shown separately) or other conductor tracks into consideration.
  • the use of a bonding wire or other conductor track is described below - but without renouncing any further generality - on the example of a bonding wire.
  • Such a bonding wire acts at a corresponding amperage as the
  • FIG. 7 shows an embodiment of a circuit 12 according to FIG. 1 with an integrated current
  • the terminal behavior of the circuit 12 changes, for example, in the form of a breakdown of the voltage between the collector terminal 22 and the emitter terminal 24 until the respective fuse 16 is triggered.
  • the voltage between the collector terminal 22 and the emitter terminal 24 (or generally the terminal voltage) and the current at the collector terminal 22 (or generally the terminal current) are known and for example by means of acting as a monitoring device driver circuit 32 with each recorded measured values (in the illustration by appropriate measuring devices, namely a voltmeter and a
  • a combination of the functionality for controlling a redundant IGBT and for monitoring the IGBTs covered thereby and correspondingly the use of a driver circuit 32 as a monitoring device is advantageous because the driver circuit 32 usually has the abovementioned measured values anyway, so that only a minimal effort is required to monitor them the measured values are required in relation to respectively expected values (expected values).
  • the driver circuit 32 are the HeidelbergZeitali and thus the
  • the driver circuit 32 or another monitoring device outputs an output signal 34 which indicates a possible defect of a semiconductor component 10 encompassed by the respective associated circuit 12. Due to such output signal 34, a display element, for example a light emitting diode (not shown), driven ⁇ the. Due to the monitoring, an exchange of a circuit 12 which is affected by a defect of a semiconductor component 10 or a plurality of semiconductor components 10 can take place in a timely manner.
  • a use in a so-called inverse converter (buck-boost converter) or in a boost converter (boost converter) comes into consideration a circuit 12 with a plurality of switchable semiconductor devices 10 in place of a usually provided there each simple electronic switch occurs.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)

Abstract

La présente invention concerne un circuit électronique de puissance redondant (12) se présentant sous la forme d'un montage parallèle d'au moins deux semi-conducteurs de puissance (10) identiques ou au moins de même type, un coupe-circuit (16) étant monté en série avec chaque semi-conducteur de puissance (10). L'invention concerne également un convertisseur comportant un circuit électronique de puissance (12) de ce type.
PCT/EP2015/063802 2014-07-09 2015-06-19 Circuit électronique de puissance redondant présentant des montages série en parallèle comprenant semi-conducteur de puissance et coupe-circuit Ceased WO2016005166A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102014213310.6 2014-07-09
DE102014213310 2014-07-09
DE102015206531.6 2015-04-13
DE102015206531.6A DE102015206531A1 (de) 2014-07-09 2015-04-13 Leistungselektronikschaltung und Umrichter mit einer Leistungselektronikschaltung

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WO2016005166A1 true WO2016005166A1 (fr) 2016-01-14

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DE (1) DE102015206531A1 (fr)
WO (1) WO2016005166A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016169817A1 (fr) * 2015-04-21 2016-10-27 Siemens Aktiengesellschaft Convertisseur à coupure par court-circuit en un demi-pont
DE102017206553A1 (de) 2017-01-25 2018-07-26 Siemens Aktiengesellschaft Halbleitermodul

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018213182A1 (de) * 2018-08-07 2020-02-13 Bayerische Motoren Werke Aktiengesellschaft Kontrollsystem für ein Kraftfahrzeug und Verfahren zur Fehlerdiagnose bei einem Kontrollsystem
JP7154907B2 (ja) 2018-09-14 2022-10-18 株式会社東芝 半導体モジュール
DE102023202464A1 (de) * 2023-03-21 2024-09-26 Zf Friedrichshafen Ag Leistungselektronische Schaltung
DE102023202465A1 (de) * 2023-03-21 2024-09-26 Zf Friedrichshafen Ag Leistungselektronische Schaltung
DE102023133323B4 (de) * 2023-11-29 2025-06-12 DeepDrive GmbH Wechselrichterschaltung und elektromotorisches Antriebssystem
GB2641722A (en) * 2024-06-05 2025-12-17 Rolls Royce Deutschland Ltd & Co Kg DC power system
GB2642942A (en) * 2024-06-05 2026-02-04 Rolls Royce Deutschland Ltd & Co Kg Power system with a power converter
DE102024138847B3 (de) 2024-12-19 2026-03-26 Schaeffler Technologies AG & Co. KG Verfahren zum Überwachen einer Schaltung, Steuerungsvorrichtung und Schaltung

Citations (4)

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EP0431492A2 (fr) * 1989-12-04 1991-06-12 Kabushiki Kaisha Toshiba Convertisseur de puissance de type pont avec rendement amélioré
WO1992009137A1 (fr) * 1990-11-19 1992-05-29 Inventio Ag Procede et dispositif pour le montage en parallele de convertisseurs de frequence
DE4435255A1 (de) * 1994-10-01 1996-04-04 Abb Management Ag Verfahren zur Fehlerbehebung in einer Stromrichterschaltungsanordnung
EP0989611A2 (fr) 1998-09-22 2000-03-29 Asea Brown Boveri AG Module de transistors bipolaires à grille isolée avec protection contre des courts-circuits

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DE19639279C2 (de) * 1996-09-25 2002-01-17 Daimlerchrysler Rail Systems Stromrichterschaltung
DE102011079552B4 (de) * 2011-07-21 2014-05-08 Siemens Aktiengesellschaft Schaltungsanordnung zum Schalten eines Stromes und Verfahren zum Betreiben eines Halbleiter-Leistungsschalters

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0431492A2 (fr) * 1989-12-04 1991-06-12 Kabushiki Kaisha Toshiba Convertisseur de puissance de type pont avec rendement amélioré
WO1992009137A1 (fr) * 1990-11-19 1992-05-29 Inventio Ag Procede et dispositif pour le montage en parallele de convertisseurs de frequence
DE4435255A1 (de) * 1994-10-01 1996-04-04 Abb Management Ag Verfahren zur Fehlerbehebung in einer Stromrichterschaltungsanordnung
EP0989611A2 (fr) 1998-09-22 2000-03-29 Asea Brown Boveri AG Module de transistors bipolaires à grille isolée avec protection contre des courts-circuits

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016169817A1 (fr) * 2015-04-21 2016-10-27 Siemens Aktiengesellschaft Convertisseur à coupure par court-circuit en un demi-pont
US10574131B2 (en) 2015-04-21 2020-02-25 Siemens Aktiengesellschaft Converter having short-circuit interruption in a half-bridge
DE102017206553A1 (de) 2017-01-25 2018-07-26 Siemens Aktiengesellschaft Halbleitermodul
WO2018138017A1 (fr) 2017-01-25 2018-08-02 Siemens Aktiengesellschaft Module à semi-conducteur

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