WO2016007582A1 - Substrat de support pour exfoliation par faisceau d'ions d'une lamelle cristalline - Google Patents

Substrat de support pour exfoliation par faisceau d'ions d'une lamelle cristalline Download PDF

Info

Publication number
WO2016007582A1
WO2016007582A1 PCT/US2015/039485 US2015039485W WO2016007582A1 WO 2016007582 A1 WO2016007582 A1 WO 2016007582A1 US 2015039485 W US2015039485 W US 2015039485W WO 2016007582 A1 WO2016007582 A1 WO 2016007582A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
donor
donor substrate
crystalline
support substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2015/039485
Other languages
English (en)
Inventor
Adam A. Brailove
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GTAT Corp
Original Assignee
GTAT Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GTAT Corp filed Critical GTAT Corp
Publication of WO2016007582A1 publication Critical patent/WO2016007582A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Definitions

  • Ion implantation is a materials engineering process by which ions of a source material are accelerated in an electrical field and impacted into a solid target substrate. This process is used to change the physical, chemical, or electrical properties of the solid. Ion implantation is often used in semiconductor device fabrication and in metal finishing, as well as various applications in materials science. Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are accelerated to a specific energy, and a target chamber, where the ions impinge on a target, which is the material to be implanted. The energy of the ions, as well as the ion species and the composition of the target, determine the depth of penetration of the ions in the solid, i.e., the "range" of the ions.
  • ion implantation there are various uses for ion implantation, such as the introduction of dopants (e.g., boron, phosphorus or arsenic) in a semiconductor.
  • dopants e.g., boron, phosphorus or arsenic
  • modification of semiconductors such as silicon wafers is often implemented by ion implanters, where a surface is uniformly irradiated by a beam of ions or molecules, of a specific species and prescribed energy.
  • Another use for ion implantation is for cleaving (exfoliating) thin sheets (lamina) of hard crystalline materials such as silicon, sapphire, etc.
  • this process involves implanting light ions 10 into a donor substrate 20 where they will stop below the surface in a layer in a "cleave plane" 30. The material may then be heated (for example), causing the material above the implanted layer to cleave off or exfoliate in a sheet or lamina 40.
  • a thicker "handle" substrate to provide mechanical support for the lamina
  • bonding to the support can occur either before or after exfoliation.
  • a bond e.g., temporary or permanent
  • the donor substrate at the portion that will become lamina
  • both the lamina and the backing substrate/handle are cleaved from the substrate. Bonding before exfoliation is particularly advantageous for very thin, delicate lamina to assist in subsequent handling and processing steps.
  • a lower-cost substrate such as a multi- crystalline form of the same material (mSiC, mAIN, etc.) or other handle material of similar thermal expansion characteristics can also be attached prior to exfoliation to provide additional support to the resulting lamina. In this way overall cost is reduced.
  • FIG. 2 illustrates such a process where: 1) a relatively thicker wafer of the expensive (“$$$”) mono-crystalline "donor" material 20 is provided (e.g., with a polished surface), 2) the donor is implanted with ions 10 to form cleave plane (implanted layer) 30, 3) the implanted face is bonded to a "handle" wafer 50 (generally less expensive "$"), and 4) the bonded pair is cleaved (exfoliated) leaving a thin layer of the mono-crystalline material (lamina 40) attached to the handle along with a remnant donor 20R.
  • the process can be repeated from step 1 using remnant donor wafer 20R.
  • the expensive donor is progressively sliced from its starting thickness until it reaches its "minimum thickness" and is too thin to be reused.
  • the disclosed embodiments relate to techniques for supporting crystalline donor material when it is subjected to ion implantation and exfoliation to produce a crystalline lamina.
  • the problems mentioned above may be reduced or alleviated.
  • bowing of the donor material may be prevented, and, furthermore, the donor material may be almost completely utilized through repeated exfoliations.
  • the techniques herein eliminate other problems, such as ion beam shadowing, non-uniform thermal environments, and so on.
  • a donor substrate of crystalline material having a front surface and a back surface, and a support substrate is provided such that the back surface of the donor substrate can be bonded to the support substrate.
  • an ion dosage may be implanted to the front surface of the donor substrate to form a cleave plane within the donor substrate, thereby forming an implanted composite material. Consequently, a crystalline lamina may be cleaved from the donor substrate along the cleave plane, while the back surface remains bonded to the support substrate.
  • FIG. 1 illustrates a general ion implantation followed by exfoliation.
  • FIG. 2 illustrates a more detailed ion implantation and exfoliation process.
  • FIG. 3 illustrates an example of donor wafer thickness over repeated use.
  • FIGS. 4A-4B illustrate an example issue of donor wafer bowing.
  • FIGS. 5A-5B illustrate example issues of handling a donor wafer.
  • FIG. 9 illustrates an example procedure for supporting crystalline donor material when it is subjected to ion implantation and exfoliation to produce a crystalline lamina according to embodiments of the present invention.
  • the total implant dosage may be any dosage between about 1.0 x 10 14 and 1.0 x 10 18 H/cm 2 , such as 0.5 - 3.0 x 10 17 H/cm 2 .
  • the total dosage energy can also be varied, such as greater than or equal to about 50 keV, including between about 500 keV to about 3 MeV.
  • the ion implantation temperature may be maintained between about 200°C and 950°C, such as between 300°C and 800°C or between 550°C and 750°C, and this can be adjusted depending upon the specific type of donor body. For example, when the donor substrate is sapphire, the ion implantation temperature may be between 500°C and 800°C.
  • a backing or "handle” substrate 50 such as glass or plastic
  • Any bonding technique may be used to bond the donor 20 and the handle 50 together, temporarily or permanently, in order to form a bonded composite, including the use of various adhesives for bonding the lamina to the backing substrate, such as, for example, glass frit, polymer adhesives, anodic bonding, and atomic (fusion) bonding.
  • the handle substrate may be a transparent material, such as glass, which remains permanently bonded to the exfoliated lamina 40, and the resulting multilayer composite may be used as a screen for an electronic device.
  • Non-transparent substrates may be useful in applications such as adding a protective layer to decorative glass or plastic.
  • the exfoliation process may further include cleaving, or exfoliating, crystalline lamina 40 from the donor substrate 20 along the cleave plane, while the back surface remains bonded to the support substrate.
  • the lamina 40 is a thin sheet of the crystalline material which makes up the donor substrate 20.
  • the donor substrate 20 may be heated (for example), causing the material above the implant layer 30 to cleave off or exfoliate, thus forming the lamina 40.
  • the lamina 40 is cleaved from the donor substrate 10 along the cleave plane defined by the implanted ion dosage.
  • a support substrate is provided (e.g., with a thickness of the support substrate selected to reduce bowing of the donor substrate due to the cleaving, as mentioned above), and in step 915 a donor substrate of crystalline material is also provided having a front surface and a back surface.
  • the back surface of the donor substrate is bonded (e.g., fusion bonded) to the support substrate.
  • the bonding may be across the complete back surface, or else only on select portions of the back surface.
  • Steps 940 and 945 may be repeated to implant additional ion dosages and cleave further additional crystalline laminas (e.g., and handle substrates) from the donor substrate, while the back surface remains bonded to the support substrate, until reaching the back surface of the donor substrate in step 950.
  • residual donor material may be removed from the support substrate after reaching the back surface of the donor substrate (e.g., polishing the support substrate), and the process 900 may repeat to bond an additional back surface of an additional donor substrate (e.g., provided in step 915) to the now cleaned (e.g., polished) support substrate.
  • the process 900 may continue to repeat with the same support substrate until a new substrate is needed, or until no further lamina are desired.
  • the present disclosure further relates to a thin, crystalline lamina (or film), as manufactured using the techniques described herein, or also to a composite material formed by adhering a crystalline lamina to a handle substrate, such as glass or plastic.
  • a lamina or composite material may be transparent and used for screens (cover glasses) for consumer goods, such as watches, mobile phones, and other various electronics, as well as for other purposes.
  • a composite material described herein may comprise a plastic or glass handle or backing substrate (e.g., transparent) bonded to a thin lamina (e.g., also transparent) of a hard crystalline material (e.g., sapphire) having a thickness of less than 100 microns, such as less than 100 microns, less than 50 microns, less than 30 microns, less than 25 microns, and less than 15 microns.
  • the lamina may be particularly produced using the implantation and cleaving method described above.

Landscapes

  • Pressure Welding/Diffusion-Bonding (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Les modes de réalisation de l'invention concernent des techniques pour soutenir un matériau donneur cristallin lorsqu'il est soumis à une implantation ionique et une exfoliation afin de produire une lamelle cristalline. Selon des modes de réalisation de la présente invention, un substrat donneur en matériau cristallin est utilisé qui présente une surface avant et une surface arrière, et un substrat de support est utilisé de manière que la surface arrière du substrat donneur puisse être collée au substrat de support. De ce fait, une dose d'ions peut être implantée dans la surface avant du substrat donneur afin de former un plan de clivage dans le substrat donneur, ce qui permet de former un matériau composite implanté. Par conséquent, une lamelle cristalline peut être clivée du substrat donneur le long du plan de clivage, pendant que la surface arrière reste collée au substrat de support.
PCT/US2015/039485 2014-07-11 2015-07-08 Substrat de support pour exfoliation par faisceau d'ions d'une lamelle cristalline Ceased WO2016007582A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462023514P 2014-07-11 2014-07-11
US62/023,514 2014-07-11

Publications (1)

Publication Number Publication Date
WO2016007582A1 true WO2016007582A1 (fr) 2016-01-14

Family

ID=55064804

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2015/039485 Ceased WO2016007582A1 (fr) 2014-07-11 2015-07-08 Substrat de support pour exfoliation par faisceau d'ions d'une lamelle cristalline

Country Status (2)

Country Link
TW (1) TW201612957A (fr)
WO (1) WO2016007582A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018011731A1 (fr) * 2016-07-12 2018-01-18 QMAT, Inc. Procédé d'un substrat donneur soumis à une récupération
CN109478493A (zh) * 2016-07-12 2019-03-15 Qmat股份有限公司 供体衬底进行回收的方法
WO2020234416A1 (fr) * 2019-05-23 2020-11-26 Ascatron Ab Production de plaquette de dispositif en sic à efficacité cristalline
WO2022185906A1 (fr) * 2021-03-04 2022-09-09 信越半導体株式会社 Procédé de fabrication de tranche épitaxiale d'élément électroluminescent ultraviolet, procédé de fabrication de substrat d'élément électroluminescent ultraviolet, tranche épitaxiale d'élément électroluminescent ultraviolet, et substrat d'élément électroluminescent ultraviolet

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010003668A1 (en) * 1999-12-08 2001-06-14 Kazutaka Yanagita Composite member separating method, thin film manufacturing method, and composite member separating apparatus
US20020081822A1 (en) * 1999-02-02 2002-06-27 Kazutaka Yanagita Composite member and separating method therefor, bonded substrate stack and separating method therefor, transfer method for transfer layer, and SOI substrate manufacturing method
US20040214434A1 (en) * 2001-04-17 2004-10-28 Atwater Harry A. Wafer bonded virtual substrate and method for forming the same
US20100096733A1 (en) * 2007-03-06 2010-04-22 S.O.I. Tec Silicon On Insulator Technologies Process for fabricating a substrate comprising a deposited buried oxide layer
US20120168091A1 (en) * 2010-12-29 2012-07-05 Twin Creeks Technologies, Inc. Method and Apparatus for Forming a Thin Lamina

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020081822A1 (en) * 1999-02-02 2002-06-27 Kazutaka Yanagita Composite member and separating method therefor, bonded substrate stack and separating method therefor, transfer method for transfer layer, and SOI substrate manufacturing method
US20010003668A1 (en) * 1999-12-08 2001-06-14 Kazutaka Yanagita Composite member separating method, thin film manufacturing method, and composite member separating apparatus
US20040214434A1 (en) * 2001-04-17 2004-10-28 Atwater Harry A. Wafer bonded virtual substrate and method for forming the same
US20100096733A1 (en) * 2007-03-06 2010-04-22 S.O.I. Tec Silicon On Insulator Technologies Process for fabricating a substrate comprising a deposited buried oxide layer
US20120168091A1 (en) * 2010-12-29 2012-07-05 Twin Creeks Technologies, Inc. Method and Apparatus for Forming a Thin Lamina

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018011731A1 (fr) * 2016-07-12 2018-01-18 QMAT, Inc. Procédé d'un substrat donneur soumis à une récupération
CN109478493A (zh) * 2016-07-12 2019-03-15 Qmat股份有限公司 供体衬底进行回收的方法
JP2019527477A (ja) * 2016-07-12 2019-09-26 キューエムエイティ・インコーポレーテッド ドナー基材を再生するための方法
WO2020234416A1 (fr) * 2019-05-23 2020-11-26 Ascatron Ab Production de plaquette de dispositif en sic à efficacité cristalline
CN114207777A (zh) * 2019-05-23 2022-03-18 阿斯卡顿股份公司 晶体高效的sic装置晶片生产
US11996330B2 (en) 2019-05-23 2024-05-28 Ii-Vi Advanced Materials, Llc Crystal efficient SiC device wafer production
US12476149B2 (en) 2019-05-23 2025-11-18 Ii-Vi Advanced Materials, Llc Crystal efficient SiC device wafer production
WO2022185906A1 (fr) * 2021-03-04 2022-09-09 信越半導体株式会社 Procédé de fabrication de tranche épitaxiale d'élément électroluminescent ultraviolet, procédé de fabrication de substrat d'élément électroluminescent ultraviolet, tranche épitaxiale d'élément électroluminescent ultraviolet, et substrat d'élément électroluminescent ultraviolet
JP2022134799A (ja) * 2021-03-04 2022-09-15 信越半導体株式会社 紫外線発光素子用エピタキシャルウェーハの製造方法、紫外線発光素子用基板の製造方法、紫外線発光素子用エピタキシャルウェーハ及び紫外線発光素子用基板
JP7484773B2 (ja) 2021-03-04 2024-05-16 信越半導体株式会社 紫外線発光素子用エピタキシャルウェーハの製造方法、紫外線発光素子用基板の製造方法及び紫外線発光素子用エピタキシャルウェーハ
US12581771B2 (en) 2021-03-04 2026-03-17 Shin-Etsu Handotai Co., Ltd. Method for manufacturing epitaxial wafer for ultraviolet ray emission device, method for manufacturing substrate for ultra violet ray emission device, epitaxial wafer for ultraviolet ray emission device, and substrate for ultraviolet ray emission device

Also Published As

Publication number Publication date
TW201612957A (en) 2016-04-01

Similar Documents

Publication Publication Date Title
US8138064B2 (en) Method for producing silicon film-transferred insulator wafer
TWI700729B (zh) 具備氧化物單結晶薄膜之複合晶圓之製造方法
US10971674B2 (en) Method for producing composite wafer having oxide single-crystal film
US11201081B2 (en) Method for separating thin layers of solid material from a solid body
US6150239A (en) Method for the transfer of thin layers monocrystalline material onto a desirable substrate
JP5443977B2 (ja) 高純度イオンシャワーを用いるｓｏｉ構造の作成
KR102104147B1 (ko) 하이브리드 기판의 제조 방법 및 하이브리드 기판
EP1983553B1 (fr) Procede de fabrication d'un substrat soi
Radojevic et al. Large etch-selectivity enhancement in the epitaxial liftoff of single-crystal LiNbO 3 films
CN107636802B (zh) 具备氧化物单晶薄膜的复合晶片及其制造方法
EP2770524A1 (fr) Procédé permettant de récupérer une tranche décollée
CN107615448A (zh) 具备氧化物单晶薄膜的复合晶片的制造方法
EP2924736B1 (fr) Procédé de fabrication de tranche de soi
KR102138949B1 (ko) Sos 기판의 제조 방법 및 sos 기판
US8324078B2 (en) Method and installation for fracturing a composite substrate along an embrittlement plane
JP2009537076A (ja) 絶縁体上半導体構造を形成するための方法
WO2011038390A2 (fr) Procédé de réduction de la densité des dislocations dans du silicium à l'aide d'une contrainte
CN120727561B (zh) 一种半导体复合衬底的制备方法
US20250391704A1 (en) Method for transferring a thin layer onto a support substrate
Pathak et al. Large area stress free Si layer transfer onto Corning glass substrate using ion-cut
WO2015195314A1 (fr) Amélioration de l'émissivité d'un substrat donneur pour implantation d'ions
WO2016029072A1 (fr) Système d'exfoliation par faisceau d'électrons à transport de substrats

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15819684

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15819684

Country of ref document: EP

Kind code of ref document: A1