WO2016044932A1 - Procédé de fabrication de capteur inertiel 3d - Google Patents

Procédé de fabrication de capteur inertiel 3d Download PDF

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Publication number
WO2016044932A1
WO2016044932A1 PCT/CA2015/050937 CA2015050937W WO2016044932A1 WO 2016044932 A1 WO2016044932 A1 WO 2016044932A1 CA 2015050937 W CA2015050937 W CA 2015050937W WO 2016044932 A1 WO2016044932 A1 WO 2016044932A1
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Prior art keywords
wafer
cap
mems
thermal oxide
cap wafer
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Robert Mark Boysel
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Motion Engine Inc
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Motion Engine Inc
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5783—Mountings or housings not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00611—Processes for the planarisation of structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0242—Gyroscopes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0109—Bridges

Definitions

  • This present disclosure relates to a 3D Capacitive Microelectromechanical System (MEMS) pendulous Inertial Sensor, and more particularly to a method of fabricating the sensor using a LOCal Oxidation of Silicon (LOCOS) process.
  • MEMS Microelectromechanical System
  • LOC LOCal Oxidation of Silicon
  • Microelectromechanical System (MEMS) devices in particular accelerometers and angular rate sensors or gyroscopes (i.e. inertial sensors), are being used in a steadily growing number of applications. Due to the significant increase in consumer electronics applications for MEMS sensors, such as smart phones, optical image stabilization (OIS) for phones and cameras, and wearable electronics, there has been a growing interest in utilizing such technology for more advanced applications traditionally catered to by much larger, more expensive and higher grade non-MEMS sensors. These applications include single and multiple axis devices for industrial applications, Inertial Measurement Units (IMUs) for navigation systems and Attitude Heading Reference Systems (AHRS), control systems for unmanned air, ground and sea vehicles and for precise personal indoor and even GPS-denied navigation.
  • IMUs Inertial Measurement Units
  • AHRS Attitude Heading Reference Systems
  • the sensitivity to acceleration and angular velocity can be increased while decreasing the sensitivity to thermal mechanical noise by using a thicker (100 - 1000 m) pendulous inertial proof mass.
  • the mass is suspended from flexible supports and moves in three dimensions in response to acceleration and angular velocity.
  • the motion of the pendulous mass is detected by measuring changes in the differential capacitance between the proof mass and electrodes located above and below the mass.
  • the capacitor gap between the mass and the electrodes can be formed by etching a recess, either in the electrodes or in the proof mass.
  • the gap can be formed by depositing a spacer material between the electrode caps and the MEMS proof mass and removing it selectively beneath and above the proof mass. Both etching and thin film deposition are limited to about 5-10% uniformity across a wafer. This non- uniformity gives rise to variability in each of the top and bottom capacitor gaps which can lead to offset errors in the measured differential capacitance.
  • the sense capacitance be as large as possible. This can be accomplished in one of two ways: increasing the capacitor area and decreasing the capacitor gap. Because of chip area limitations, minimizing the gap is attractive. Thus sense capacitor gaps are typically very small, in the 1 -5 m range.
  • the plates of the sense capacitor can be caused to come into contact either from surface tension effects during fabrication or due to shock or over-ranging in operation. Once in contact, the Van der Waal's force, which arises from inter-atomic attractive forces and is proportional to the contact area, can exceed the restoring force of the springs and cause the capacitor plates to stick.
  • the present invention addresses the capacitor gap non-uniformity by employing a local oxidation or LOCOS process and complete oxide removal to produce the capacitor gap. Oxidation processes are slow, can be controlled much more accurately than etch and deposition processes, and can be performed on many wafers at the same time.
  • anti-stiction bumps can be formed using a two-step oxidation process.
  • an improved method for fabricating MEMS sensor is provided.
  • the MEMS sensor is formed by top and bottom caps and a central MEMS wafer which includes a MEMS structure, such as a resonant structure or a membrane.
  • the method uses a LOCOS process for controllably forming recesses in top and bottom cap wafers, consequently forming more uniform capacitors gaps once the MEMS sensor is assembled.
  • the method involves using a single-step LOCOS process for forming recesses on the inner side(s) of the top and/or bottom cap layers of a MEMS device.
  • the process comprises growing a first layer of oxide film on the inner sides and depositing a first layer of non-oxidizing film thereon; etching the first layer of non-oxidizing film to expose a pattern in the first layer of oxide film corresponding to predetermined locations of recesses; etching the exposed first layer of oxide film, using the first layer of non-oxidizing film as a mask; growing a first thick layer of thermal oxide on the exposed silicon, thus consuming the underlying silicon; and removing the first layers of oxide film, non-oxidizing film and thick thermal oxide.
  • anti-stiction gaps are formed in the recesses.
  • the step of etching the first layer of non-oxidizing film exposes a pattern in the first layer of oxide film which includes un-exposed sections corresponding to predetermined locations of anti-stiction bumps.
  • the anti-stiction bumps are fabricated with a height t1 , the difference between the bonding surface and the top of the bumps with a height t2, and the recesses with a thickness t1 + t2.
  • Such an embodiment uses a two-step LOCOS process.
  • the method described above further comprises the steps of growing a second layer of oxide film on the inner sides and depositing a second layer of non-oxidizing film thereon; etching the second layer of non-oxidizing film to expose a pattern in the second layer of oxide film corresponding to the predetermined locations of the recesses and of the anti-stiction bumps; etching the exposed second layer of oxide film, using the second layer of non-oxidizing film as a mask; growing a second thick layer of thermal oxide on the exposed silicon, thus consuming the underlying silicon; and removing the second layers of oxide film, non-oxidizing film and thick thermal oxide.
  • the LOCOS processes outlined in the present invention can be combined with existing fabrication methods for MEMS which involve the assembly of top and bottom cap layers to enclose the MEMS structure, such as a resonant structure for example.
  • the layers of the MEMS device can be patterned and assembled using know processes to complete the MEMS device, while having the particular advantage of having more uniform capacitor gaps provided by the LOCOS process.
  • a method for manufacturing a three dimensional MEMS sensor is provided.
  • the method includes the steps of: forming at least one recess on an inner side of a silicon-based first cap wafer by growing thermal oxide films to consume a portion of silicon in the first cap wafer; patterning trenches to form electrodes on the inner side of the first cap wafer; patterning first portions of a MEMS structure in a first side of a MEMS wafer; bonding said first side of the patterned MEMS wafer to the inner side of the first cap wafer with the at least one recess facing the MEMS structure to form at least one capacitance gap, the electrodes of the first cap wafer being located over the MEMS structure and forming a capacitor therewith; patterning second portions of the MEMS structure on a second side of the MEMS wafer; further bonding the second side of the patterned MEMS wafer to an inner side of a silicon-based second cap wafer; and removing a portion of an outer side of the first cap wafer to isolate the electrodes of the first cap wafer.
  • the thermal oxide films include first and second thermal oxide films, and forming at least one recess includes the steps of: growing the first thermal oxide film on the inner side of the first cap wafer; depositing a first non- oxidizing film on the inner side of the first cap wafer on top of the first thermal oxide film; etching the first non-oxidizing film to create exposed areas at locations along the inner side of the first cap wafer where the at least one recess is to be located; growing the second thermal oxide film in the exposed areas; and removing the first non-oxidizing film and the first and second thermal oxide films, thereby leaving the at least one recess in the first cap wafer.
  • the step of forming at least one recess further includes the substep of etching the first thermal oxide film in the exposed areas prior to growing the second thermal oxide film. In an embodiment, the step of etching the first thermal oxide film in the exposed area includes a wet etch process.
  • the steps of removing the first non-oxidizing film, and the first and second thermal oxide films include wet etch processes.
  • the method further includes a step of forming at least one recess in the second cap wafer by growing at least some of the thermal oxide films to consume a portion of silicon in the second cap wafer.
  • the second thermal oxide film is grown to a thickness greater than a thickness of the first thermal oxide film.
  • the thickness of the second thermal oxide film is between 10 and 100 times the thickness of the first thermal oxide film.
  • the first thermal oxide film is grown to a thickness between 10 nm and 100 nm.
  • the second thermal oxide film is grown to a thickness between 1 and 3 urn.
  • the method further includes the step of forming at least one anti-stiction bump in the at least one recess in the first cap wafer.
  • forming the at least one anti-stiction bump in the at least one recess in the first cap wafer includes growing the thermal oxide films to consume the portion of the silicon in the first cap wafer in a two-step oxidation process.
  • the thermal oxide films further include third and fourth thermal oxide films
  • the two-step oxidation process includes a first step including the substeps of: growing the first thermal oxide film on the inner side of the first cap wafer; depositing the first non-oxidizing film on the inner side of the first cap wafer on top of the first thermal oxide film; etching the first non-oxidizing film to create the exposed areas, while also leaving covered areas at locations along the inner side of the first cap wafer where the at least one anti-stiction bump is to be located; growing the second thermal oxide film in the exposed areas; removing the first non-oxidizing film and the first and second thermal oxide films, thereby leaving behind the at least one recess and the at least one anti-stiction bump; and a second step including the substeps of: growing the third thermal oxide film on the inner side of the first cap wafer; depositing a second non-oxidizing film on the inner side of the first cap wafer on top of the third thermal oxide film; etching the second non-oxidizing film to expose the at least
  • the second thermal oxide film is grown to a first depth t1 and the fourth thermal oxide film is grown to a second depth t2, thereby resulting in the at least one recess having a thickness t1 +t2 and the at least one anti-stiction bump having a height t1 .
  • the depth t1 is different than the depth t2.
  • the depth t2 is greater than the depth t1.
  • growing the second and fourth thermal oxide films includes forcing an oxidizing agent to diffuse into the first cap wafer at predetermined temperatures for predetermined periods of time, said predetermined temperatures and periods of time respectively corresponding to temperatures and times required to grow thermal oxide film in the silicon-based first cap wafer to depths t1 and t2, respectively.
  • the first cap wafer includes a single-layer silicon wafer
  • the step of patterning the electrodes includes etching closed-loop trenches on the inner side of the first cap wafer along the at least one recess, and filing or lining said trenches with an insulated material to electrically insulate the electrodes from the remainder of the first cap wafer.
  • the trenches are etched in the first cap wafer to a depth approximately equal to the final first cap thickness.
  • the first cap wafer includes a first SOI wafer.
  • the method further includes the step of patterning trenches to form electrodes on the inner side of the second cap wafer.
  • the second cap wafer includes a second SOI wafer
  • the step of forming the electrodes in the second cap wafer includes the substeps of etching, down to a buried oxide layer, closed-loop trenches on the inner side of the second cap wafer along the at least one recess, the trenches and buried oxide layer together electrically insulating the electrodes from the remainder of the second cap wafer.
  • the method further includes a step of forming at least first and second electrical contacts on the outer side of the first cap wafer, the first electrical contact being electrically connected to at least one of the electrode in the first cap wafer and the second electrical contact being electrically connected to at least one of the electrodes in the second cap wafer via insulated conducting channels extending from within the second cap wafer, through the MEMS wafer and through the first cap wafer.
  • the method further includes a step of forming electrical contacts on an outer side of the second cap wafer, said electrical contacts on the outer side of the second cap wafer being electrically connected to the electrodes of the second cap wafer.
  • the method further includes a step of forming at least first and second electrical contacts on the outer side of the first cap wafer, the first electrical contact being electrically connected to at least one of the electrodes of the first cap wafer and the second electrical contact being electrically connected to the MEMS structure via insulated conducting channels extending from within the MEMS wafer and through the first cap wafer.
  • the MEMS wafer includes a third SOI wafer with a handle layer and a device layer, the first side of the MEMS wafer including the handle layer and the second side of the MEMS wafer including the device layer, and the MEMS structure includes a flexible element patterned in the device layer.
  • the MEMS sensor includes an inertial sensor
  • the MEMS structure is a resonant structure
  • the flexible element includes springs suspending the resonant structure
  • the steps of patterning the first and second portions of the MEMS structure include patterning portions of the resonant structure and spring in the device layer of the MEMS wafer, and patterning remaining portions of the resonant structure and the spring in the handle layer of the MEMS wafer.
  • the resonant structure is a proof mass.
  • the first and second cap wafers are bonded using a conductive bond.
  • bonding the first and second cap wafer to the MEMS wafer includes hermetically sealing the MEMS structure between the first and second cap wafers.
  • the step of growing the thermal oxide film to consume a portion of the silicon on the inner side of the first cap wafer is performed simultaneously on a plurality of wafers.
  • the plurality of wafers is between 25 and 200.
  • a variation between depths of the recesses formed in each of the plurality of wafers is less than 5%.
  • a MEMS sensor is provided, the MEMS sensor being one manufactured by the method described above.
  • a three dimensional (3D) MEMS sensor is provided.
  • the MEMS sensor includes: an electrically conductive MEMS wafer including a MEMS structure, the MEMS wafer having a first side and a second side; a silicon-based top cap having an inner top cap side and an outer top cap side, the inner top cap side having at least one recess formed by oxidation of a portion of the silicon of the top cap, the at least one recess facing the MEMS structure to form at least one capacitance gap, the top cap having electrodes patterned in the inner top cap side, the inner top cap side being bonded to the first side of the MEMS wafer, the electrodes of the top cap being located over the MEMS structure and forming a capacitor therewith across the capacitance gap, the outer top cap side having electrical contacts on or over the electrically conductive top cap wafer, a silicon-based bottom cap having an inner bottom cap side and an outer bottom
  • the senor further includes at least one anti-stiction bump formed by oxidation in the at least one recess of the top cap.
  • the at least one anti-stiction bump extends in the recess below a height thereof.
  • a height of the at least one anti-stiction bump is less than half of the height of the recess
  • the inner bottom cap side has at least one recess formed by oxidation of a portion of the silicon of the bottom cap.
  • the at least one recess in the bottom cap faces the MEMS structure to form at least one capacitance gap, the bottom cap having electrodes patterned in the inner bottom cap side, the electrodes of the bottom cap being located under the MEMS structure and forming a capacitor therewith across the capacitance gap, the outer bottom cap side having electrical contacts on or over the electrically conductive bottom cap wafer.
  • the sensor further includes at least one anti-stiction bump formed by oxidation in the at least one recess of the bottom cap.
  • Figure 1 is a cross section view of a possible embodiment of a MEMS 3D Inertial Sensor fabricated with a local oxidation process.
  • Figure 2 is a cross section view of a top cap wafer of the MEMS 3D Inertial Sensor of FIG. 1 , showing a possible step of the fabrication method.
  • Figure 3 is a cross section view of the top cap wafer of FIG. 2, showing the patterning of non-oxidizing and thermal oxide films to form an oxidation mask for the recess and, optionally, anti-stiction bumps.
  • Figure 4 is a cross section view of the top cap wafer of FIG. 2, showing thermal oxidation to consume silicon in the recesses.
  • Figure 5 is a cross section view of the top cap wafer of FIG. 2, showing wet-etch removal of the non-oxidizing oxide films.
  • Figure 6 is a cross section view of the top cap wafer of FIG. 2, showing second thick oxide film growth following regrowth and patterning of the thin oxide and non-oxidizing films, according to an optional step of the fabrication method.
  • Figure 7 is a cross section view of the top cap wafer of FIG. 2, showing recesses and anti-stiction bumps patterned in the cap silicon following the LOCOS processes, according to an optional step of the fabrication method.
  • Figure 8 is a cross section view of the top cap wafer of FIG. 2, showing trench patterning to define cap electrodes and leads.
  • Figure 9 is a cross section view of the top cap wafer of FIG. 2, showing the trenches lined with an insulating film, in this case thermal oxide.
  • Figure 10 is a cross section view of the top cap wafer of FIG. 2, showing the trenches filled with a conducting or non-conducting film, in this case polysilicon.
  • Figure 1 1 is a cross section view of the top cap wafer of FIG. 2, showing the conductive or non-conductive fill and insulating lining films etched back to the silicon surface, leaving filled trenches.
  • Figure 12 is a cross section view of a bottom cap wafer of the MEMS Inertial Sensor of FIG. 1 , fabricated using a similar process as illustrated in FIGS. 2 through 1 1 .
  • Figure 13 is a cross section view of a MEMS wafer of the MEMS Inertial Sensor of FIG. 1 , showing the start of the MEMS wafer process with an oxidized SOI wafer.
  • Figure 14 is a cross section view of the MEMS wafer of FIG. 13, showing the etching of trenches for the SOI shunts.
  • Figure 15 is a cross section view of the MEMS wafer of FIG. 13, showing the SOI shunt trenches filled with a conducting film, in this case polysilicon.
  • Figure 16 is a cross section view of the MEMS wafer of FIG. 13, showing the conducting fill film etched off of one surface (here the top surface or SOI layer) of the MEMS wafer, leaving filled SOI shunts, with the SOI device layer MEMS structures patterned.
  • Figure 17 is a cross section view showing the top cap wafer of FIG. 2 aligned and bonded to the patterned side (i.e. device layer) of the MEMS wafer of FIG. 13.
  • Figure 18 is a cross section view of the assembled top cap and MEMS wafers of FIG. 17, showing the conducting and insulating films etched off the other (non- processed) side of the MEMS wafer and the MEMS structures (in this case, feedthroughs and a proof mass) patterned.
  • Figure 19 is a cross section view of the MEMS 3D Inertial Sensor of FIG. 1 , showing the bottom cap wafer bonded to the MEMS wafer.
  • Figure 20 is a cross section view of the MEMS 3D Inertial Sensor of FIG. 1 , showing the top cap ground and polished to expose the insulating channels.
  • Figure 21 is a cross section view of the MEMS 3D Inertial Sensor of FIG. 1 , showing the top cap passivated with a protective insulating oxide layer, contacts etched through the oxide, and with lead and bond pad metallization applied.
  • Figure 22 is a cross section view of the MEMS 3D Inertial Sensor of FIG. 1 , showing bond pads and leads patterned in the metallization layer.
  • Figure 23 is a cross section view of a MEMS 3D Inertial Sensor according to one possible embodiment with top-cap-only bond pads, showing a thick protective passivation oxide layer deposited over the bond pads, where the bottom cap is ground, polished, and passivated with a thin oxide layer.
  • Figure 24 is a cross section view of the MEMS 3D Inertial Sensor of FIG. 23, showing contacts opened over the bond pads.
  • Figure 25 is a cross section view of the MEMS 3D Inertial Sensor according to an embodiment with bond pads on both caps and before the top bond pad contacts are opened, showing bottom cap contacts patterned through the thin protective oxide, bond pad and electrical lead metallization deposited and patterned, and a deposited thick protective oxide.
  • Figure 26 is a cross section view of the MEMS 3D Inertial Sensor of FIG. 25, showing contacts opened over the bond pads on both the top and bottom caps, thus completing the MEMS fabrication.
  • Figure 27 is a cross section view of the top cap of the MEMS 3D Inertial Sensor according to an embodiment with no anti-stiction bumps, showing the recess patterned with a single thermal oxidation.
  • Figure 28 is a cross section view of the top cap of FIG. 27 showing the recess only.
  • Figure 29 is a cross section view of the completed MEMS according to an embodiment using the top cap of FIG. 28, showing the wafer with the recess and no anti-stiction bumps formed by a single recess oxidation.
  • Figure 30 is a cross section view of the bottom cap of the MEMS 3D Inertial Sensor according to an embodiment in which the bottom cap is fabricated from an SOI wafer, with the SOI buried oxide eliminating the need to use an insulating trench fill.
  • Figure 31 is a cross section view of the MEMS 3D Inertial Sensor according to the embodiment of FIG. 30, showing the wafer with the SOI bottom cap prior to top cap completion.
  • Figure 32 is a cross section view of the Completed MEMS 3D Inertial Sensor according to the embodiment of FIG. 30, showing the wafer with SOI bottom cap.
  • FIG. 1 shows an embodiment of a MEMS sensor 10 fabricated using a possible embodiment of the present fabrication method.
  • the MEMS sensor is a 3D inertial sensor, but it should be appreciated that other types of MEMS sensors can also be fabricated using the present invention, such as a MEMS pressure sensor, for example.
  • the sensor 10 consists of a proof mass 17 suspended by one or more springs 27 between two caps 12 and 14, each with four or more drive and sense electrodes 13, 15 disposed to measure the position of the proof mass in 3-dimensional space in response to acceleration and angular velocity.
  • the proof mass 17 and springs 27 are fabricated in a MEMS wafer 16, which in this case is a central silicon-on- insulator (SOI) wafer.
  • SOI silicon-on- insulator
  • the bulk of the proof mass 17 is in the handle layer 22 of the SOI wafer 16, and the springs 27 are patterned in the single crystal silicon (SCS) device layer 20.
  • the device 20 and handle 22 layers of the SOI wafer are separated by an insulating buried oxide layer 24, so conducting shunts 34 through the buried oxide are used to electrically connect the device and handle layers where required.
  • the caps include one or more recesses 38 which form a capacitor gap 39 between the electrodes 13, 15 and the outer surfaces of the proof mass, as well as anti-stiction bumps 47.
  • the capacitor gap 39 is the space between the outer surfaces of the MEMS structure and the inner surfaces of the caps.
  • Anti-stiction bumps 47 protrude slightly from the recessed portion of the caps, such that the height of the gap 39 is shorter opposite the bumps.
  • the anti- stiction bumps are an optional feature but are included as part of the preferred embodiment.
  • Anti-stiction bumps are projections protruding or projecting from the respective inner surfaces of cap plates 12, 14, preventing the proof mass from "sticking" to the caps. Of course, it is possible that only one of the caps be provided with anti-stiction bump(s).
  • the recesses and bumps in the caps are fabricated using a local oxidation process, also referred to as Local Oxidation of Silicon (LOCOS).
  • LOCOS Local Oxidation of Silicon
  • Figure 2 shows the start of the manufacturing process. Fabrication of a gap 39 with an anti-stiction bump 47 will be described, the gap and bump being formed with a two-step LOCOS process. The first step involves a first oxidation, while the second step involves a second oxidation.
  • a first silicon-based wafer 12 is provided.
  • the first wafer 12 has inner 121 and outer 122 sides, and will serve as a first or top cap in the assembled MEMS device.
  • a first thermal oxide film 48 is grown on the wafer 12.
  • the first thermal oxide is grown to a thickness of approximately 50 nm, and can therefore be referred to as a thin thermal oxide film.
  • a first non-oxidizing film 49 such as silicon nitride, is deposited.
  • Figure 3 shows the patterning of the films.
  • the first non-oxidizing film 49 is patterned and etched to expose the thermal oxide 48 on the inner side 121 in the locations corresponding to the recesses.
  • the first non-oxidizing film 49 can be removed using either a wet or dry etch.
  • the exposed first thermal oxide film 48 is etched using the first non-oxidizing film 49 as a mask.
  • the oxide is etched using a wet etch to avoid damage to the underlying silicon. It is also possible to leave the thin oxide, without etching it.
  • FIG 4 shows the growth of a second thermal oxide film 50 on the exposed silicon 12.
  • the second thermal oxide film 50 can be referred to as a thick thermal oxide in that it is generally thicker than the first thermal oxide film 48, for example 10 to 100 times thicker, or between 1 m and 5 m.
  • the oxidation process consumes some of the underlying silicon.
  • the rate of growth of thermal oxide is determined by several parameters: wet vs. dry process, temperature, and silicon crystal structure.
  • the thickness of silicon consumed is typically about 46% of the thickness of the thermal oxide grown, due to the relative densities of silicon and silicon dioxide, and may vary by 2-4 per cent depending upon the quality of the oxide grown.
  • the thin thermal oxide is not etched.
  • Figure 6 shows the second oxidation which involves the growth of another thick thermal oxide 50' in order to further define the recess 38 and bumps 47.
  • a third thermal oxide film 48' is grown.
  • the third thermal oxide film 48' can be referred to as a thin film in that it also has a thickness of about 50 nm.
  • a second non-oxidizing film 49' is deposited and the films are patterned and etched as before. In this step the anti-stiction bumps 47 are left exposed with the rest of the recess 38.
  • the fourth thermal oxide film 50' is a thick thermal oxide in that it is generally thicker than the third thermal oxide film 48', and may have a thickness between 1 m and 5 m, or be 10 to 100 times thicker than the third thermal oxide film 48'.
  • Figure 7 shows the second non-oxidizing film 49' and third 48' and fourth 50' thermal oxide films again removed using wet etches producing a recess 38 and anti-stiction bump 47. If the amount of silicon consumed by the second thermal oxide film during the first oxidation is t1 and the amount consumed by the fourth thermal oxide film during the second oxidation is t2, then the recess thickness is t1 +t2, the anti-stiction bump height is t1 , and the difference in height between the outer edge or bonding surface of the chip and the top of the bump is t2.
  • the depths t1 and t2 can be chosen according to the needs of the device.
  • t1 can be less than t2, resulting in the anti-stiction bump having a height less than half of the recess thickness.
  • oxidation conditions for each oxidation the total capacitor gap width and anti-stiction bump height can be adjusted independently.
  • An advantage of the present method compared to other existing methods is that the height of the capacitor cap can be carefully controlled since thermal oxidation is a slow predictable process but is a batch process that can be applied to many wafers (such as up to 100-200) at a time. For example a typical oxidation process undertaken at 1000 grows 1 micr ometer of oxide in 4 hours, or 4 nm/minute. Controlling the oxidation time to one minute thus corresponds to 0.4 % reproducibility.
  • Si etches have higher rates and are more variable with around 5% reproducibility. Also Si etches are limited to single wafers in dry etchers and around 25 wafers in batch wet etches. As can be appreciated, after conducting this step, the entire oxide layers are removed.
  • the silicon wafer 12 is patterned with the desired top cap electrode pattern by etching trenches 28 into the silicon 12 that penetrate partially into the wafer a distance approximately equal to the final cap thickness.
  • the trenches 28 are etched on the inner side 121 of the top cap 12, within the recess 38 formed using the LOCOS process.
  • Figure 9 shows a thermal oxidation of the wafer to coat the surfaces of the trenches with an insulating oxide 30.
  • Figure 10 shows the filling of the trenches 28 with a conductive material 32 such as polysilicon.
  • a conductive material 32 such as polysilicon.
  • the purpose of the fill is mechanical, to provide a rigid hermetic seal in the trenches 28 when the sensor is assembled.
  • the trenches 28 can be filled with only an insulating material such as thermal oxide, LPCVD (Low Pressure Chemical Vapor Deposition) oxide, or other insulating film.
  • LPCVD Low Pressure Chemical Vapor Deposition
  • Numerous trench etch and fill processes are available at different MEMS fabrication facilities and the insulating and conducting materials vary between them. The details of the trench etch and fill process are not critical. What is needed is that islands of silicon in the shape of the electrodes 13 be surrounded by insulating barriers which are patterned into the silicon a sufficient depth greater than the final desired cap thickness.
  • the conductive layer 32 here polysilicon, is etched back to or just below the surface of the silicon recess 38, and the oxide is wet etched from the surface and tops of the trenches, leaving an exposed bare silicon surface on the inner side 121 , with electrodes 13 outlined by insulating trenches 28 as shown in Figure 1 1 .
  • the process is repeated on a second wafer 14 to form a bottom cap with the bottom cap electrode pattern 15 as shown in Figure 12.
  • FIG 13 shows the start of the MEMS wafer fabrication process, where first portions of a MEMS structure are patterned in the MEMS wafer 16.
  • the process starts with a silicon-based wafer 16, referred to as a MEMS wafer.
  • the MEMS wafer comprises a SOI (Silicon on Insulator) wafer 16 with a first side 161 and a second side 162, the wafer 16 consisting of a SOI device layer 20, a SOI handle layer 22, and buried oxide 24.
  • the SOI wafer is first oxidized to form a protective thermal oxide layer 48 on the top and bottom sides 161 , 162.
  • the electrical SOI Shunts 34 on the MEMS 16 are formed next, between the SOI Device layer 20 and the SOI Handle layer 22 through the Buried Oxide 24.
  • Trenches 28 are patterned in the desired spots to form conducting shunts, and are etched through the SOI device layer 20 and buried oxide 24 to or slightly into the SOI handle layer 22.
  • these trenches 28 are then filled with a conducting material 32 which can be doped polycrystalline silicon (polysilicon), metal, or other conducting material. In this way an electrical path 34 is formed vertically between the SOI Device and handle layers 20, 22 at desired spots.
  • the polysilicon or other conductor and protective oxide are etched off the SOI device layer 20.
  • the desired MEMS structures including leads 36 and feedthroughs 25 are patterned, delimited by trenches 28 in the SOI device layer 20.
  • the top portion of the proof mass will be delineated during this step.
  • the inner side 121 of the top cap wafer 12 is then aligned and bonded to the SOI Device layer 20 on the first side 161 of the MEMS wafer 16.
  • the feedthrough pads 28 on the SOI Device layer 20 are aligned to the corresponding pads on the top cap wafer 12 and the electrodes 13 on the top cap 12 are aligned to the relevant electrodes 19 on the MEMS wafer 16.
  • the wafer bonding process used should be one that provides a conductive bond such as fusion bonding, gold thermocompression bonding, or gold-silicon eutectic bonding.
  • second portions of the MEMS structure are patterned on the second side 162 of the MEMS wafer 16.
  • the conducting polysilicon and protective thermal oxide are etched off of the second side 162 of the MEMS wafer 16 in the SOI handle layer 22.
  • the SOI handle layer 22 is next patterned with additional MEMS structures (i.e. a proof mass 17 in the case of an inertial sensor) and feedthrough 19. Trenches etched around the feedthrough 19 isolate it from the rest of the layer.
  • the feedthrough is attached to a SOI Shunt on the Device layer, then it becomes an isolated electrical feedthrough. If it is not attached to a Silicon Via, the feedthrough becomes merely a mechanical support.
  • at least one conducting channel or pathway preferably extends from the proof mass 17, through the flexural springs 27, and through the top or bottom cap, and is eventually connected to a bond pad.
  • the inner side 141 of the bottom cap wafer 14 is next bonded to the SOI handle layer 22 on the second side 162 of the MEMS wafer 16.
  • a wafer bonding method such as fusion bonding, gold thermocompression bonding, or gold-silicon eutectic bonding should be used to provide electrical contact between the feedthroughs 19 in the MEMS wafer.
  • a conductive path is provided from the bottom electrodes through the bottom cap, handle feedthroughs, silicon vias, and SOI device layer to the top cap.
  • the MEMS 16 is hermetically sealed between the cap wafers 12, 14 and aligned with the top cap and bottom cap.
  • the electrodes on each cap are shorted together through the remaining silicon.
  • one cap wafer, here the top cap 12 is then ground and polished to expose the insulating trenches 28.
  • the electrodes are thus electrically isolated except for the connections to the top cap bond pads through the feedthroughs and silicon vias.
  • the feedthroughs and conducting shunts allow the bond pads on the top cap to be electrically connected to the bottom cap and/or to the MEMS structure in the MEMS wafer.
  • the ground and polished cap is passivated with an insulating oxide layer 40 to protect it.
  • contacts 42 are opened in the top cap 12 and metallization 41 is applied.
  • any electrical leads 36 and bond pads 23 are patterned in the metallization. In this way, the electrical connections from the top and bottom of the MEMS are accessible from the top for wire bonding, flip chip bonding, or wafer bonding.
  • a thick passivation layer 45 is deposited over the bond pads 23, and leads 36 to protect them. The wafer can then be inverted and the grind, polish and cap insulating layer 40 deposition processes are repeated on the other cap wafer, here the bottom cap 14.
  • the cap process flow can be simplified with a single thicker gap oxidation as shown in Figure 27.
  • the thin thermal oxide 48 and non-oxidizing 49 films are deposited as described earlier and etched to delineate the capacitor recess.
  • a thick thermal oxide 50 is grown whose thickness is chosen to consume an amount of silicon appropriate for the capacitor gap width, typically 1 m to 5 m.
  • the non- oxidizing film and thin and thick oxide films are stripped leaving a cap wafer 12 with a recess 38 of the desired depth etched into it.
  • the process flow continues as described earlier resulting in a MEMS IMU sensor as before, without anti-stiction bumps, but with well-defined capacitor gaps 39.
  • the trench etch, fill, and polish process for the bottom cap can be replaced by using an SOI (Silicon-On-lnsulator) wafer for the bottom cap.
  • SOI Silicon-On-lnsulator
  • the recess 38 and anti-stiction bump 47 processes are carried out on an SOI wafer 14 instead of a standard wafer.
  • the trench pattern 28 delineating the bottom cap electrodes 15 is etched down to the buried oxide 24. No fill or backside grind and polish are required since the electrodes 15 are isolated by the trenches 28 and the buried oxide 24.
  • the SOI bottom cap can then be bonded to the MEMS 16 and top cap 12 combination as shown in Figure 31 .
  • processing of the top cap 12 proceeds as described earlier.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un capteur tridimensionnel de microsystème électromécanique (MEMS). Le capteur MEMS selon l'invention comprend des premier et deuxième capuchons liés à une plaquette MEMS centrale, cette dernière comprenant une structure MEMS. Le procédé selon l'invention consiste à former au moins un renfoncement sur le côté interne d'au moins une des plaquettes à capuchons à base de silicium, par croissance de films d'oxyde thermiques pour consommer une partie du silicium. Le renfoncement forme l'écartement de capacité dans le capteur MEMS, entre un des capuchons et la structure MEMS. L'uniformité de l'écartement du condensateur est améliorée par recours à une oxydation locale ou à un procédé LOCOS et par élimination de l'oxyde pour produire l'écartement du condensateur.
PCT/CA2015/050937 2014-09-23 2015-09-23 Procédé de fabrication de capteur inertiel 3d Ceased WO2016044932A1 (fr)

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EP4197965A1 (fr) 2021-12-16 2023-06-21 Murata Manufacturing Co., Ltd. Procédé de fabrication de couches structurelles dans des dispositifs micromécaniques
WO2023205471A1 (fr) * 2022-04-21 2023-10-26 Mei Micro, Inc. Procédé de fabrication d'un accéléromètre à multiples plages
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WO2023205471A1 (fr) * 2022-04-21 2023-10-26 Mei Micro, Inc. Procédé de fabrication d'un accéléromètre à multiples plages

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