WO2016113493A3 - Systeme de suivi de la puissance crete pour une amplification de puissance rf et procede de calcul de valeur de crete et de selection de tension d'alimentation associe - Google Patents

Systeme de suivi de la puissance crete pour une amplification de puissance rf et procede de calcul de valeur de crete et de selection de tension d'alimentation associe Download PDF

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Publication number
WO2016113493A3
WO2016113493A3 PCT/FR2016/050043 FR2016050043W WO2016113493A3 WO 2016113493 A3 WO2016113493 A3 WO 2016113493A3 FR 2016050043 W FR2016050043 W FR 2016050043W WO 2016113493 A3 WO2016113493 A3 WO 2016113493A3
Authority
WO
WIPO (PCT)
Prior art keywords
monitoring
power
converter
supply voltage
peak
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/FR2016/050043
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English (en)
Other versions
WO2016113493A2 (fr
Inventor
Emmanuel GATARD
Pierre LACHAUD
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Amcad Engineering SARL
Original Assignee
Amcad Engineering SARL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Amcad Engineering SARL filed Critical Amcad Engineering SARL
Priority to EP16712943.6A priority Critical patent/EP3245734A2/fr
Priority to US15/543,887 priority patent/US10164575B2/en
Publication of WO2016113493A2 publication Critical patent/WO2016113493A2/fr
Publication of WO2016113493A3 publication Critical patent/WO2016113493A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216—Continuous control
    • H03F1/0222—Continuous control by using a signal derived from the input signal
    • H03F1/0227—Continuous control by using a signal derived from the input signal using supply converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0244—Stepped control
    • H03F1/025—Stepped control by using a signal derived from the input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B1/0475—Circuits with means for limiting noise, interference or distortion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04W—WIRELESS COMMUNICATION NETWORKS
    • H04W52/00—Power management, e.g. Transmission Power Control [TPC] or power classes
    • H04W52/04—Transmission power control [TPC]
    • H04W52/30—Transmission power control [TPC] using constraints in the total amount of available transmission power
    • H04W52/36—Transmission power control [TPC] using constraints in the total amount of available transmission power with a discrete range or set of values, e.g. step size, ramping or offsets
    • H04W52/367—Power values between minimum and maximum limits, e.g. dynamic range
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/102—A non-specified detector of a signal envelope being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/336—A I/Q, i.e. phase quadrature, modulator or demodulator being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/435—A peak detection being used in a signal measuring circuit in a controlling circuit of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/465—Power sensing
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/511—Many discrete supply voltages or currents or voltage levels can be chosen by a control signal in an IC-block amplifier circuit
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers
    • H04B2001/0425—Circuits with power amplifiers with linearisation using predistortion

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)

Abstract

L'objet de l'invention est un système de suivi de la puissance crête d'un signal de télécommunication à émettre pour une amplification de puissance RF (1) dudit signal de télécommunication à émettre, comprenant un dispositif de traitement numérique (3), un convertisseur numérique-RF (4) et un convertisseur continu-continu (5), la sortie du convertisseur continu-continu (5) pouvant prendre une valeur de tension discrète parmi N valeurs de tension discrètes, N étant un nombre entier supérieur ou égal à 2, le dispositif de traitement numérique (3) comprenant une chaîne de traitement (6) comprenant une logique de commande de suivi d'enveloppe (7) apte à créer un signal de commande continu de suivi d'enveloppe. La chaîne de traitement (6) comprend en outre une logique de pilotage (8) du convertisseur continu-continu (5) comprenant un dispositif de calcul de valeur de crête (9) et un dispositif de sélection de tension d'alimentation (10).
PCT/FR2016/050043 2015-01-15 2016-01-11 Systeme de suivi de la puissance crete pour une amplification de puissance rf et procede de calcul de valeur de crete et de selection de tension d'alimentation associe Ceased WO2016113493A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP16712943.6A EP3245734A2 (fr) 2015-01-15 2016-01-11 Système de suivi de la puissance crête pour une amplification de puissance rf et procédé de calcul de valeur de crête et de sélection de tension d'alimentation associé
US15/543,887 US10164575B2 (en) 2015-01-15 2016-01-11 System for monitoring the peak power for an RF power amplification and associated method of calculating peak value and of selecting supply voltage

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1550331A FR3031851B1 (fr) 2015-01-15 2015-01-15 Systeme de suivi de la puissance crete pour une amplification de puissance rf et procede de calcul de valeur de crete et de selection de tension d'alimentation associe
FR1550331 2015-01-15

Publications (2)

Publication Number Publication Date
WO2016113493A2 WO2016113493A2 (fr) 2016-07-21
WO2016113493A3 true WO2016113493A3 (fr) 2016-11-24

Family

ID=53059237

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2016/050043 Ceased WO2016113493A2 (fr) 2015-01-15 2016-01-11 Systeme de suivi de la puissance crete pour une amplification de puissance rf et procede de calcul de valeur de crete et de selection de tension d'alimentation associe

Country Status (4)

Country Link
US (1) US10164575B2 (fr)
EP (1) EP3245734A2 (fr)
FR (1) FR3031851B1 (fr)
WO (1) WO2016113493A2 (fr)

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Publication number Priority date Publication date Assignee Title
FR3053855B1 (fr) * 2016-07-06 2018-07-27 Wupa Tec Systeme de suivi de la puissance crete d'un signal de telecommunication et procede de calcul de valeur de crete et de selection de tension d'alimentation associe
US9991913B1 (en) * 2016-12-07 2018-06-05 Intel IP Corporation Discrete levels envelope tracking
WO2021207931A1 (fr) 2020-04-14 2021-10-21 Telefonaktiebolaget Lm Ericsson (Publ) Dispositif et procédé d'ajustement de signal d'enveloppe
US11736076B2 (en) 2020-06-10 2023-08-22 Qorvo Us, Inc. Average power tracking power management circuit
CN113259815A (zh) * 2021-06-02 2021-08-13 国光电器股份有限公司 音频电压跟随电路、音频产品及电压跟随方法
US12355407B2 (en) 2021-10-14 2025-07-08 Qorvo Us, Inc. Circuit and method for intra-symbol voltage modulation
US12381524B2 (en) 2021-10-14 2025-08-05 Qorvo Us, Inc. Multi-voltage generation circuit
US12237854B2 (en) * 2021-10-14 2025-02-25 Qorvo Us, Inc. Circuit and method for inter-symbol and intra-symbol voltage modulation
US12335073B2 (en) 2021-11-04 2025-06-17 Qorvo Us, Inc. Intra-symbol voltage modulation in a wireless communication circuit
WO2023081068A1 (fr) * 2021-11-04 2023-05-11 Qorvo Us, Inc. Modulation de tension intra-symbole dans un circuit de communication sans fil

Citations (3)

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Publication number Priority date Publication date Assignee Title
WO2004010283A1 (fr) * 2002-07-24 2004-01-29 Motorola, Inc. Procede et appareil permettant de fournir une tension d'alimentation en fonction d'une enveloppe d'un signal de frequence radio
US20140118065A1 (en) * 2012-10-30 2014-05-01 Eta Devices, Inc. Linearization Circuits And Methods For Multilevel Power Amplifier Systems
US20140241462A1 (en) * 2013-02-26 2014-08-28 Nvidia Corporation Circuit and method for envelope tracking and envelope-tracking transmitter for radio-frequency transmission

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US8384365B2 (en) 2007-06-15 2013-02-26 The Regents Of The University Of Colorado, A Body Corporate Multi-phase modulator
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EP2353219B1 (fr) 2008-11-11 2018-05-02 Massachusetts Institute of Technology Architecture de déphasage à niveaux multiples asymétrique pour amplificateurs rf
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US20140118065A1 (en) * 2012-10-30 2014-05-01 Eta Devices, Inc. Linearization Circuits And Methods For Multilevel Power Amplifier Systems
US20140241462A1 (en) * 2013-02-26 2014-08-28 Nvidia Corporation Circuit and method for envelope tracking and envelope-tracking transmitter for radio-frequency transmission

Also Published As

Publication number Publication date
FR3031851B1 (fr) 2017-02-17
US20170373644A1 (en) 2017-12-28
WO2016113493A2 (fr) 2016-07-21
FR3031851A1 (fr) 2016-07-22
EP3245734A2 (fr) 2017-11-22
US10164575B2 (en) 2018-12-25

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