WO2016126449A1 - Absorbeurs d'interférences électromagnétiques (emi) thermoconducteurs comportant du carbure de silicium - Google Patents

Absorbeurs d'interférences électromagnétiques (emi) thermoconducteurs comportant du carbure de silicium Download PDF

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Publication number
WO2016126449A1
WO2016126449A1 PCT/US2016/014736 US2016014736W WO2016126449A1 WO 2016126449 A1 WO2016126449 A1 WO 2016126449A1 US 2016014736 W US2016014736 W US 2016014736W WO 2016126449 A1 WO2016126449 A1 WO 2016126449A1
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Prior art keywords
thermally
volume percent
emi
conductive
silicon carbide
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PCT/US2016/014736
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English (en)
Inventor
Hoang Dinh DO
JR. Robert Howard BOUTIER
Jason Strader
Michael S. PLANTE
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Laird Technologies Inc
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Laird Technologies Inc
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Priority claimed from US14/683,870 external-priority patent/US20160233173A1/en
Priority claimed from US14/928,189 external-priority patent/US11229147B2/en
Application filed by Laird Technologies Inc filed Critical Laird Technologies Inc
Priority to EP16746968.3A priority Critical patent/EP3254541B1/fr
Priority to CN201680006672.0A priority patent/CN107207950B/zh
Publication of WO2016126449A1 publication Critical patent/WO2016126449A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H05K9/0073—Shielding materials
    • H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
    • C09K5/08—Materials not undergoing a change of physical state when used
    • C09K5/14—Solid materials, e.g. powdery or granular
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H05K9/0073—Shielding materials
    • H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
    • H05K9/0083—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising electro-conductive non-fibrous particles embedded in an electrically insulating supporting structure, e.g. powder, flakes, whiskers

Definitions

  • the present disclosure generally relates to thermally-conductive electromagnetic interference (EMI) absorbers.
  • EMI electromagnetic interference
  • Electrical components such as semiconductors, transistors, etc.
  • the pre-designed temperatures approximate the temperature of the surrounding air.
  • the operation of electrical components generates heat which, if not removed, will cause the electrical component to operate at temperatures significantly higher than its normal or desirable operating temperature. Such excessive temperatures may adversely affect the operating characteristics of the electrical component and the operation of the associated device.
  • the heat should be removed, for example, by conducting the heat from the operating electrical component to a heat sink.
  • the heat sink may then be cooled by conventional convection and/or radiation techniques.
  • heat may pass from the operating electrical component to the heat sink either by direct surface contact between the electrical component and heat sink and/or by contact of the electrical component and heat sink surfaces through an intermediate medium or thermal interface material (TIM).
  • TIM thermal interface material
  • the thermal interface material may be used to fill the gap between thermal transfer surfaces, in order to increase thermal transfer efficiency as compared to having the gap filled with air, which is a relatively poor thermal conductor.
  • EMI electromagnetic interference
  • RFID radio frequency interference
  • a common solution to ameliorate the effects of EMI/RFI is through the use of shields capable of absorbing and/or reflecting and/or redirecting EMI energy. These shields are typically employed to localize EMI/RFI within its source, and to insulate other devices proximal to the EMI RFI source.
  • EMI EMI emissions and RFI emissions
  • electromagnetic should be considered to generally include and refer to electromagnetic and radio frequency from external sources and internal sources.
  • shielding broadly includes and refers to mitigating (or limiting) EMI and/or RFI, such as by absorbing, reflecting, blocking, and/or redirecting the energy or some combination thereof so that it no longer interferes, for example, for government compliance and/or for internal functionality of the electronic component system.
  • thermally-conductive EMI absorbers that generally includes thermally-conductive particles, EMI absorbing particles, and silicon carbide.
  • the silicon carbide is present in an amount sufficient to synergistically enhance thermal conductivity and/or EMI absorption.
  • an exemplary embodiment of a thermally-conductive EMI absorber may include silicon carbide, magnetic flakes, manganese zinc ferrite, alumina, and carbonyl iron.
  • FIG. 1 is a line graph illustrating attenuation or absorption (in decibels per centimeter (dB/cm)) versus frequency (in Gigahertz (GHz)) for two different thermally- conductive EMI absorbers including silicon carbide, carbonyl iron powder, and alumina according to exemplary embodiments, and also showing a thermally-conductive EMI absorber that does not include any silicon carbide for comparison purposes;
  • FIG. 2 is a line graph illustrating attenuation (dB/cm) versus frequency (GHz) for two different thermally-conductive EMI absorbers including silicon carbide, carbonyl iron powder, and alumina according to exemplary embodiments;
  • FIG. 3 is a line graph illustrating transmission attenuation ratio (RTP) (in decibels (dB)) versus frequency (GHz) for two thermally-conductive EMI absorbers including silicon carbide, carbonyl iron powder, alumina, manganese zinc (MnZn) ferrite, and magnetic flakes according to exemplary embodiments, where the thermally-conductive EMI absorbers had thicknesses of 1 millimeter (mm) and 2.5 mm;
  • FIG. 4 is a line graph illustrating absorption power (%) versus frequency (GHz) for two thermally-conductive EMI absorbers including silicon carbide, carbonyl iron powder, alumina, manganese zinc (MnZn) ferrite, and magnetic flakes according to exemplary embodiments, where the thermally-conductive EMI absorbers had thicknesses of 1 mm and 2.5 mm;
  • FIG. 5 is a line graph illustrating attenuation (dB/cm) versus frequency (GHz) for a thermally-conductive EMI absorber including silicon carbide, carbonyl iron powder, alumina, manganese zinc (MnZn) ferrite, and magnetic flakes according to exemplary embodiments according to exemplary embodiments;
  • FIG. 6 is a line graph illustrating magnetic permeability (u) versus frequency (GHz) for a thermally-conductive EMI absorber including silicon carbide, carbonyl iron powder, alumina, manganese zinc (MnZn) ferrite, and magnetic flakes according to exemplary embodiments according to exemplary embodiments; and
  • FIG. 7 is a line graph illustrating electrical permittivity (e) versus frequency (GHz) for a thermally-conductive EMI absorber including silicon carbide, carbonyl iron powder, alumina, manganese zinc (MnZn) ferrite, and magnetic flakes according to exemplary embodiments according to exemplary embodiments.
  • a thermally-conductive EMI absorber including silicon carbide, carbonyl iron powder, alumina, manganese zinc (MnZn) ferrite, and magnetic flakes according to exemplary embodiments according to exemplary embodiments.
  • thermally-conductive EMI absorbers that include silicon carbide.
  • exemplary embodiments are disclosed of thermally-conductive EMI absorbers that include silicon carbide, carbonyl iron powder, and alumina.
  • a thermally-conductive EMI absorber may further manganese zinc (MnZn) ferrite and magnetic flakes.
  • silicon carbide works synergistically with the thermally-conductive materials (e.g. , Alumina (AI 2 O 3 ), ceramics, etc.) and EMI absorbing materials (e.g. , carbonyl iron powder (CIP), magnetic flakes, manganese zinc (MnZn) ferrite, other EMI absorbing materials, etc.) to enhance both thermal conductivity and EMI absorption (e.g. , as shown in FIGS. 1, 2, and 5, etc.).
  • the resulting thermally- conductive EMI absorbers have high thermal conductivity (e.g.
  • thermally-conductive EMI absorbers may include silicon carbide (e.g., about 21 to 27 volume percent (vol%), etc.), carbonyl iron powder (e.g., about 8 to 38 vol%, etc.), and alumina (e.g., about 6 to 44 vol%, etc.).
  • thermally-conductive EMI absorbers may include silicon carbide (e.g., about 4 to 10 vol%, etc.), carbonyl iron powder (e.g., about 3 to 5 vol%, etc.), alumina (e.g. , about 18 to 23 vol%, etc.), manganese zinc ferrite (e.g. , about 27 to 40 vol%, etc.), and flaked magnetic material (e.g. , about 2 to 4 vol%, etc.).
  • the presence of the manganese zinc ferrite and magnetic flakes along with the silicon carbide, alumina, and carbonyl iron powder provides a thermally- conductive EMI absorbing composition having exceptionally high attenuation at low frequencies, such as between 1 GHz and 5 GHz.
  • the silicon carbide had a mean particle size of about 30 microns with particle sizes ranging from about 16 microns to about 49 microns.
  • the silicon carbide particles were mostly spherical in shape.
  • the range of particle sizes of one alumina particle was from about 1 micron to about 9 microns (e.g., with a mean particle size of about 2 microns, etc.).
  • the range of particle sizes of the other or second alumina particle was from about 26 microns to about 65 microns (e.g. , with a mean particle size of about 45 microns, etc.).
  • the range of particle sizes for the carbonyl iron particles was from about 1 micron to about 6 microns.
  • the silicon carbide, alumina, and carbonyl iron particles were all mostly spherical in shape.
  • a first example formulation of a thermally-conductive EMI absorber includes 37 volume percent of carbonyl iron powder, 26 volume percent of silicon carbide, 7 volume percent of alumina, 27.7 volume percent of silicone matrix, 2.2 volume percent of dispersant, and 0.1 volume percent of cross-linker.
  • the dispersant was Isopropyl triisostearoyl titanate
  • the crosslinker was Methylhydrogensiloxane-Dimethylsiloxane copolymer, hydride terminated.
  • This first example formulation had a thermal conductivity of 3 W/m-K.
  • a second example formulation of a thermally-conductive EMI absorber includes 9 volume percent of carbonyl iron powder, 22 volume percent of silicon carbide, 43 volume percent of alumina, 24.4 volume percent of silicone matrix, 1.5 volume percent of dispersant, and 0.1 volume percent of cross-linker.
  • the dispersant was Isopropyl triisostearoyl titanate
  • the crosslinker was Methylhydrogensiloxane- Dimethylsiloxane copolymer, hydride terminated.
  • This second example formulation had a thermal conductivity of 4 W/m-K.
  • a third example formulation of a thermally-conductive EMI absorber includes 10 volume percent of carbonyl iron powder, 27 volume percent of silicon carbide, 34 volume percent of alumina, 27.1 volume percent of silicone matrix, 1.8 volume percent of dispersant, and 0.1 volume percent of cross-linker.
  • the dispersant was Isopropyl triisostearoyl titanate
  • the crosslinker was Methylhydrogensiloxane-Dimethylsiloxane copolymer, hydride terminated.
  • This third example formulation had a thermal conductivity of 3.5 W/m-K.
  • FIGS. 1 and 2 are exemplary line graphs illustrating attenuation or absorption (dB/cm) versus frequency (GHz) for the first and second formulations described above.
  • FIG. 1 also shows attenuation or absorption (dB/cm) versus frequency (GHz) for a conventional thermally-conductive EMI absorber (labeled control in FIG. 1) that does not include any silicon carbide.
  • dB/cm attenuation or absorption
  • GHz frequency
  • the conventional absorber included 43 volume percent of by volume of carbonyl iron powder, 0 volume percent of by volume of silicon carbide, 22 volume percent of by volume alumina, 33.1 volume percent of silicone matrix, 1.7 volume percent of dispersant, and 0.2 volume percent of cross-linker.
  • the dispersant was Isopropyl triisostearoyl titanate
  • the crosslinker was Methylhydrogensiloxane-Dimethylsiloxane copolymer, hydride terminated.
  • the control had a thermal conductivity of 2 W/m-K.
  • the conventional absorber had the lowest thermal conductivity of 2 W/m-K.
  • the first formulation had a higher thermal conductivity of 3 W/m-K despite having less alumina of only 7% by volume.
  • this shows the synergistic effect that the silicon carbide had on the thermal conductivity.
  • the attenuation of the second formulation was better than the conventional absorber or control. This was despite the second formulation having only 9% by volume of carbonyl iron powder, as compared to the conventional absorber's 43% by volume of carbonyl iron powder.
  • the second formulation also had a thermal conductivity of 4 W/m-K, which was double the thermal conductivity of the conventional absorber.
  • FIG. 1 also shows that the attenuation of the first formulation was better or higher than (e.g. , about a threefold increase (3x), etc.) the conventional absorber.
  • the first formulation also had a thermal conductivity of 3 W/m-K, which is higher than the conventional absorber's thermal conductivity of 2 W/m-K.
  • a fourth example formulation of a thermally-conductive EMI absorber includes 32.1 volume percent manganese zinc ferrite, 3 volume percent of flaked magnetic material (e.g. , magnetic flakes or flaked alloy containing iron, silicon, and aluminum, etc.), 4 volume percent of carbonyl iron powder, 4.8 volume percent of silicon carbide, 4.1 volume percent of silicone oil, 1.6 volume percent of titanate coupling agent, 2.9 volume percent of 5.5 wt% cross-linker in silicone oil, 19.5 volume percent of alumina (e.g.
  • the fourth example formulation included 47.7 weight percent of manganese zinc ferrite, 5.9 weight percent of flaked magnetic material, 9 weight percent of carbonyl iron powder, 4.5 weight percent of silicon carbide, 1.2 weight percent of silicone oil, 0.5 weight percent of titanate coupling agent, 0.8 weight percent of 5.5 wt% cross-linker in silicone oil, 22.5 weight percent of alumina (e.g.
  • the manganese zinc ferrite had a mean particle size of about 6.5 microns and an irregular spherical shape.
  • the flaked magnetic material had a diameter of about 80 microns and a thickness of about 1 micron, thereby having an aspect ratio of about 80.
  • the flaked magnetic material may comprise alloy containing iron, silicon, and aluminum, such as an alloy including about 6 to 12% of silicon, about 3 to 10% of aluminum, and iron in the remaining percentage (e.g. , a magnetic metal alloy including about 85% iron, about 9.5% silicon, and about 5.5% aluminum, a magnetic metal alloy including about 85% iron, about 9% silicon, and about 6% aluminum etc.).
  • alloy containing iron, silicon, and aluminum such as an alloy including about 6 to 12% of silicon, about 3 to 10% of aluminum, and iron in the remaining percentage (e.g. , a magnetic metal alloy including about 85% iron, about 9.5% silicon, and about 5.5% aluminum, a magnetic metal alloy including about 85% iron, about 9% silicon, and about 6% aluminum etc.).
  • This fourth example formulation had a thermal conductivity of 2 W/m-K or more. This fourth example formulation also had an attenuation of at least about 9 decibels per centimeter for frequencies from 1 gigahertz to 6 gigahertz.
  • FIGS. 3 through 7 are exemplary line graphs illustrating performance data for thermally-conductive EMI absorbers having the fourth formulation described above. The results shown in FIGS. 3 through 8 are provided only for purposes of illustration and not for purposes of limitation.
  • FIG. 3 is a line graph illustrating transmission attenuation ratio (RTP) (dB) versus frequency (GHz).
  • RTP transmission attenuation ratio
  • dB transmission attenuation ratio
  • GHz frequency
  • FIG. 3 shows that the thermally-conductive EMI absorber having the fourth formulation had good RTP (e.g., greater than about 2 dB, etc.) for frequencies between 1 GHz and 6 GHz.
  • transmission attenuation ratio is a 50 ohm microstrip measurement based on IEC6233 where:
  • FIG. 4 is a line graph illustrating absorption power (%) versus frequency (GHz).
  • the thermally-conductive EMI absorber having the fourth formulation had good absorption power (%) (e.g. , greater than 30%, etc.) for frequencies between 1 GHz and 6 GHz.
  • the 2.5 millimeter thick sample had an absorption power of at least about 50% at 1 GHz and greater than about 70% for frequencies between 2 GHz and 6 GHz.
  • the 1 millimeter thick sample had an absorption power of at least about 30% at 1 GHz and greater than about 70% for frequencies between 2 GHz and 6 GHz.
  • FIG. 5 is a line graph illustrating attenuation (dB/cm) versus frequency (GHz). Generally, FIG. 5 shows that the thermally-conductive EMI absorber having the fourth formulation had good attenuation (e.g. , greater than 9 dB/cm from 1 GHz to 6 GHz, etc.) for frequencies between 1 GHz and 18 GHz.
  • good attenuation e.g. , greater than 9 dB/cm from 1 GHz to 6 GHz, etc.
  • the thermally-conductive EMI absorber having the fourth formulation had an attenuation of at least about 11 dB/cm at 1 GHz, at least about 25 dB/cm at 2 GHz, at least about 36 dB/cm at 3 GHz, at least about 44 dB/cm at 4 GHz, at least about 49 dB/cm at 5 GHz, and at least about 52 dB/cm at 6 GHz.
  • FIGS. 6 and 7 are line graphs respectively illustrating magnetic permeability (u) and electrical permittivity (e) versus frequency (GHz) for the thermally-conductive EMI absorber having the fourth formulation.
  • permeability and permittivity are measured and may then be entered into an equation to calculate attenuation, which reflects EMI absorption.
  • a material with higher imaginary magnetic permeability (u") and higher imaginary electrical permittivity (e") will have a higher attenuation.
  • Other properties of material may also derived from these four parameters, i.e. , real magnetic permeability (u') and imaginary magnetic permeability (u") shown in FIG. 6, and the real electrical permittivity (e') and imaginary electrical permittivity (e") shown in FIG. 7.
  • FIGS. 6 and 7 show that the thermally-conductive EMI absorber having the fourth formulation had good magnetic permeability and electrical permittivity for frequencies between 1 GHz and 6 GHz.
  • thermally-conductive EMI absorbers having high EMI absorption or attenuation (e.g. , at least 9 decibels per centimeter (dB/cm) at a frequency of at least 1 GHz, etc.) at low frequencies (e.g. , from 1 GHz to 6 GHz, etc.) and high thermal conductivity (e.g. , at least 2 W/mk or higher, etc.).
  • the thermally- conductive EMI absorber may also have a high magnetic permeability (e.g., a magnetic permeability of 23 at 10 MHz, etc.).
  • exemplary embodiments of thermally- conductive EMI absorbers may include a material (e.g.
  • soft silicone gel, etc. including silicon carbide, alumina, carbonyl iron powder, manganese zinc (MnZn) ferrite, and magnetic flakes or flaked magnetic materials (e.g. , flaked Sendust magnetic metal powder, flaked permalloy, a flaked alloy containing iron, silicon, and aluminum, a flaked alloy containing iron and nickel, a flaked material having a relatively high permeability, etc.) for good heat transfer and microwave absorption.
  • MnZn manganese zinc
  • the magnetic flakes or flaked magnetic materials may comprise an alloy containing iron, silicon, and aluminum, such as an alloy including about 6 to 12% of silicon, about 3 to 10% of aluminum, and iron in the remaining percentage (e.g. , a magnetic metal alloy including about 85% iron, about 9.5% silicon, and about 5.5% aluminum, a magnetic metal alloy including about 85% iron, about 9% silicon, and about 6% aluminum etc.), etc.
  • the magnetic flakes or flaked magnetic materials may comprise an alloy containing iron and aluminum, such as a nickel-iron magnetic alloy including about 20% iron and about 80% nickel, etc.
  • the thermally-conductive EMI absorber may be placed between a chip (or other heat source) and a heat sink (or other heat dissipating device or component) to conduct heat away and prevents (or at least inhibit) EMI energy from reaching the heat sink and radiating out.
  • the thermally-conductive EMI absorber may allow for the elimination of a noise suppressor.
  • each of first, second, and third sample formulations included carbonyl iron powder in the amounts of 37 vol%, 9 vol%, and 10 vol%, respectively.
  • carbonyl iron powder offers better performance for frequencies of interest ranging from about 5 GHz to about 15 GHz.
  • Other exemplary embodiments may include one or more other EMI absorbers instead of or in addition to carbonyl iron powder and/or in different amounts.
  • the fourth formulation also included manganese zinc ferrite and magnetic flakes or flaked alloy containing iron, silicon, and aluminum in addition to carbonyl iron powder. More specifically, the example fourth formulation included 32.1 volume percent manganese zinc ferrite, 3 volume percent of flaked magnetic material, and 4 volume percent of carbonyl iron powder.
  • exemplary embodiments may include one or more other EMI absorbers instead of or in addition to manganese zinc ferrite, magnetic flakes, and/or carbonyl iron powder and/or in different amounts.
  • EMI absorbers that may be used in exemplary embodiments include iron silicide, iron particles, iron oxides, iron alloys, iron-chrome compounds, SENDUST, permalloy, ferrites, magnetic alloys, magnetic powders, magnetic flakes, magnetic particles, nickel-based alloys and powders, chrome alloys, carbonyl iron (e.g., carbonyl iron powder, etc.), combinations thereof, etc.
  • the EMI absorbers may comprise one or more of granules, spheroids, microspheres, ellipsoids, irregular spheroids, strands, flakes, particles, powder, and/or a combination of any or all of these shapes.
  • the EMI absorber may comprise magnetic material, such as a magnetic material with a magnetic relative permeability greater than 2 at 1.0 Megahertz.
  • the EMI absorber may have a relative magnetic permeability greater than about 3.0 at approximately 1.0 Gigahertz, and greater than about 1.5 at 10 Gigahertz.
  • Alternative embodiments may include EMI absorbers configured differently and in different sizes.
  • each of the first, second, third, and fourth example formulations included alumina in the amounts of 7 vol%, 43 vol%, 34 vol%, and 19.5 vol%, respectively.
  • alumina is relatively low cost and is available in various particle sizes, which allows for nesting or packing of alumina particles to increase volume loading of the alumina for higher thermal conductivity.
  • Other exemplary embodiments may include one or more other thermal conductors or thermally-conductive fillers instead of or in addition to alumina.
  • some exemplary embodiments may include other thermally-conductive fillers having a thermal conductivity of at least 1 W/m-K (Watts per meter- Kelvin) or more, such as a copper filler having thermal conductivity up to several hundred W/m-K, etc.
  • other exemplary embodiments may include one or more of the following thermally- conductive fillers: zinc oxide, boron nitride, silicon nitride, aluminum, aluminum nitride, alumina, iron, metallic oxides, graphite, ceramics, combinations thereof (e.g. , alumina and zinc oxide, etc.), etc.
  • exemplary embodiments may also include different grades (e.g.
  • thermally-conductive EMI absorber may include two different sizes of boron nitride.
  • the final characteristics of the thermally-conductive EMI absorber e.g. , thermal conductivity, cost, hardness, etc.
  • the thermally-conductive EMI absorbers may have a thermal conductivity of at least 2 W/m-K or higher.
  • the first, second, third, and fourth example formulations included a silicone matrix (e.g. , silicone elastomer, silicone gel, etc.).
  • the matrix may comprise other materials, such as other thermoset polymers including polyurethanes, rubber (e.g. , SBR, nitrile, butyl, isoprene, EPDM, etc.), etc.
  • the matrix material may comprise thermoplastic matrix materials, polyolefins, polyamides, polyesters, polyurethanes, polycarbonates, polystyrene and styrenic copolymers, acrylnitriles, polyvinyl chlorides, polysulfones, acetals, polyarlyates, polypropylenes, surlyns, polyethylene terephthalates, polystyrenes, combinations thereof, etc.
  • the matrix may be selected based on the particular fillers (e.g. , silicon carbide, alumina, carbonyl iron powder, manganese zinc ferrite, magnetic flakes, other fillers, etc.) and/or particular amounts of fillers that may be suspended or added to the matrix.
  • the matrix may also be substantially transparent to electromagnetic energy so that the matrix does not impede the absorptive action of the EMI absorbing filler in the matrix.
  • a matrix exhibiting a relative dielectric constant of less than approximately 4 and a loss tangent of less than approximately 0.1 is sufficiently transparent to EMI. Values outside this range, however, are also contemplated as these specific numerical values provided in this paragraph (as are all numerical values disclosed herein) are for purposes of illustration only and not for purposes of limitation.
  • thermally-conductive EMI absorber that includes silicon carbide, carbonyl iron powder, and alumina, such as a thermally-conductive EMI absorber having the first, second, or third example formulation described above.
  • a high speed mixer may be used to mix silicone gel parts A and B, along with the dispersant and cross linker until well blended (e.g. , mixing for about 2 minutes, etc.).
  • carbonyl iron powder may then be slowly added while mixing (e.g. , for about 5 minutes, etc.) until the carbonyl iron powder is well mixed and wetted with silicone polymer.
  • silicon carbide may next be slowly added while mixing (e.g. , for about 5 minutes, etc.) until well blended.
  • alumina or aluminum oxide having a first or smaller particle size may be slowly added while mixing (e.g. , for about 5 minutes, etc.) until well blended.
  • alumina or aluminum oxide having a second or larger particle size may be slowly added while mixing (e.g. , for about 5 minutes, etc.) until well blended.
  • the mixing may be continued (e.g. , for about 5 minutes, etc.) until the mixture is thoroughly smooth.
  • the mixture may be placed under vacuum (e.g.
  • An eighth step or operation may include setting a gap may between calendering rolls for desired product thickness.
  • the mixture may be rolled between two release liners in- between the calendering rolls.
  • the resulting sheets may be cured in an oven, e.g. , at 285 degrees Fahrenheit for about 1 to 2 hours depending on thickness, etc.
  • thermally-conductive EMI absorber that includes silicon carbide, carbonyl iron powder, alumina, manganese zinc ferrite, and magnetic flakes, such as a thermally-conductive EMI absorber having the fourth formulation described above.
  • a mixer may be used to mix silicone gel parts A and B, along with a dispersant and cross linker until well blended (e.g. , mixing for about 2 minutes, etc.).
  • carbonyl iron powder may then be slowly added while mixing (e.g.
  • silicon carbide may next be slowly added while mixing (e.g. , for about 5 minutes, etc.) until well blended.
  • silicon carbide may next be slowly added while mixing (e.g. , for about 5 minutes, etc.) until well blended.
  • alumina or aluminum oxide having a first or smaller particle size may be slowly added while mixing (e.g. , for about 5 minutes, etc.) until well blended.
  • alumina or aluminum oxide having a second or larger particle size may be slowly added while mixing (e.g. , for about 5 minutes, etc.) until well blended.
  • manganese zinc ferrite may next be slowly added while mixing (e.g.
  • a seventh step or operation magnetic flakes may be slowly added while mixing (e.g., for about 30 minutes, etc.) until the magnetic flakes are well mixed and wetted with silicone polymer.
  • the mixing may be continued (e.g., for about 10 minutes, etc.) until the mixture is thoroughly smooth.
  • the resulting sheets may be cured in an oven (e.g. , at 285 degrees Fahrenheit, etc. ) for a predetermined amount of time depending on thickness (e.g. , for about 6 hours or more for thicknesses of 0.1 inch to have a clean peel, etc.).
  • Some additional steps that may occur before the curing process may include placing the mixture under vacuum (e.g. , for about 5 minutes, etc.) to remove air, setting a gap may between calendering rolls for desired product thickness, and rolling the mixture between two release liners in-between the calendering rolls.
  • vacuum e.g. , for about 5 minutes, etc.
  • a thermally-conductive EMI absorber may further include an adhesive layer, such as a pressure-sensitive adhesive (PSA), etc.
  • PSA pressure-sensitive adhesive
  • the adhesive layer can be used to affix the thermally- conductive EMI absorbers to a portion of an EMI shield, such as to a single piece EMI shield, to a cover, lid, frame, or other portion of a multi-piece shield, to a discrete EMI shielding wall, etc.
  • Alternative affixing methods can also be used such as, for example, mechanical fasteners.
  • the thermally-conductive EMI absorber may be tacky or self- adherent such that the thermally-conductive EMI absorber may be self-adhered to another surface without any adhesive layer.
  • a thermally-conductive EMI absorber may be attached to a lid or cover of an EMI shield (e.g. , a lid or cover of a single-piece EMI shield, a removable lid or cover of a multi-piece EMI shield, a lid or cover of an EMI shield from Laird Technologies, etc.).
  • the thermally-conductive EMI absorber may be placed, for example, on an inner surface of the cover or lid.
  • the thermally-conductive EMI absorber may be placed, for example, on an outer surface of the cover or lid.
  • the thermally-conductive EMI absorber may be placed on an entire surface of the cover or lid or on less than an entire surface.
  • the thermally-conductive EMI absorber may be placed on a frame or base and a separate thermally-conductive EMI absorber may be placed on a removable lid or cover that is attachable to the frame or base.
  • the thermally-conductive EMI absorber may be applied at virtually any location at which it would be desirable to have a thermally-conductive EMI absorber.
  • a thermally-conductive EMI absorber may be used to define or provide part of a thermally-conductive heat path from a heat source to a heat dissipating device or component.
  • a thermally-conductive EMI absorber disclosed herein may be used, for example, to help conduct thermal energy (e.g. , heat, etc.) away from a heat source of an electronic device (e.g. , one or more heat generating components, central processing unit (CPU), die, semiconductor device, etc.).
  • a thermally-conductive EMI absorber may be positioned generally between a heat source and a heat dissipating device or component (e.g.
  • thermally-conductive EMI absorber may then function to allow transfer (e.g., to conduct heat, etc.) of heat from the heat source along the thermally-conductive path to the heat dissipating device.
  • the thermally-conductive EMI absorber may be used similarly to a thermal gap pad and allow for the elimination of a noise suppressor.
  • Example embodiments of thermally-conductive EMI absorbers disclosed herein may be used with a wide range of heat dissipation devices or components (e.g. , a heat spreader, a heat sink, a heat pipe, a device exterior case or housing, etc.), heat- generating components, heat sources, heat sinks, and associated devices.
  • a heat source may comprise one or more heat generating components or devices (e.g., a CPU, die within underfill, semiconductor device, flip chip device, graphics processing unit (GPU), digital signal processor (DSP), multiprocessor system, integrated circuit, multi-core processor, etc.).
  • a heat source may comprise any component or device that has a higher temperature than the thermally- conductive EMI absorber or otherwise provides or transfers heat to the thermally-conductive EMI absorber regardless of whether the heat is generated by the heat source or merely transferred through or via the heat source.
  • exemplary applications include printed circuit boards, high frequency microprocessors, central processing units, graphics processing units, laptop computers, notebook computers, desktop personal computers, computer servers, thermal test stands, etc. Accordingly, aspects of the present disclosure should not be limited to use with any one specific type of heat-generating component, heat source, or associated device.
  • the thermally-conductive EMI absorber may be configured to have sufficient conformability, compliability, and/or softness to allow the thermally-conductive EMI absorber to closely conform to a mating surface when placed in contact with the mating surface, including a non-flat, curved, or uneven mating surface.
  • the thermally-conductive EMI absorber has sufficient deformability, compliance, conformability, compressibility, and/or flexibility for allowing the thermally- conductive EMI absorber to relatively closely conform to the size and outer shape of an electronic component when placed in contact with the electronic component.
  • the thermally-conductive EMI absorber is conformable even without undergoing a phase change or reflow.
  • the thermally-conductive EMI absorber may comprise a phase change material.
  • the thermally-conductive EMI absorber may comprise a non- phase change gap filler, gap pad, or putty that is conformable without having to melt or undergo a phase change.
  • the thermally-conductive EMI absorber may be able to adjust for tolerance or gaps by deflecting at low temperatures (e.g. , room temperature of 20 °C to 25 °C, etc.).
  • a thermally-conductive EMI absorbers may have a Young' s modulus of less than or equal to about 300 pound force per square inch (lpf/in ) or 2.1 megapascals (MPa).
  • a thermally-conductive EMI absorber may have a Young' s modulus that falls
  • a thermally-conductive EMI absorbers may have a Shore 00 Hardness less than or equal to 60.
  • a thermally-conductive EMI absorber may have a Shore 00 Harness value that falls within a range from about 50 to about 60.
  • the thermally-conductive EMI absorber may be conformable and have sufficient compressibility and flexibility for allowing the thermally-conductive EMI absorber to relatively closely conform to the size and outer shape of an electrical component when placed in contact with the electrical component.
  • a thermally-conductive EMI absorber may be along the inner surface of a cover of an EMI shield such that the thermally-conductive EMI absorber is compressed against the electrical component when the EMI shield is installed to a printed circuit board over the electrical component. By engaging the electrical component in this relatively close fitting and encapsulating manner, the thermally-conductive EMI absorber can conduct heat away from the electrical component to the cover in dissipating thermal energy.
  • a thermally-conductive EMI absorber may be formed as a tape.
  • the tape for example, can be stored on a roll.
  • desired application shapes e.g. , rectangle, circle, ellipse, etc.
  • desired application shapes can be die-cut from the thermally- conductive EMI absorber, thereby yielding thermally-conductive EMI absorbers of any desired two-dimensional shape. Accordingly, the thermally-conductive EMI absorber can be die-cut to produce the desired outlines of an application shape.
  • a thermally-conductive EMI absorber may be operable for absorbing a portion of the EMI incident upon the EMI absorber, thereby reducing transmission of EMI therethrough over a range of operational frequencies (e.g., a frequency range from about 1 GHz to at least about 5 GHz, a frequency range from about 5 GHz to at least about 15 GHz, a frequency range from about 2 GHz to at least about 18 GHz, etc.).
  • the EMI absorber may remove a portion of the EMI from the environment through power dissipation resulting from loss mechanisms. These loss mechanisms include polarization losses in a dielectric material and conductive, or ohmic, losses in a conductive material having a finite conductivity.
  • EMI absorbers function to absorb electromagnetic energy (that is, EMI).
  • EMI absorbers convert electromagnetic energy into another form of energy through a process commonly referred to as a loss.
  • Electrical loss mechanisms include conductivity losses, dielectric losses, and magnetization losses.
  • Conductivity losses refer to a reduction in EMI resulting from the conversion of electromagnetic energy into thermal energy.
  • the electromagnetic energy induces currents that flow within an EMI absorber having a finite conductivity.
  • the finite conductivity results in a portion of the induced current generating heat through a resistance.
  • Dielectric losses refer to a reduction in EMI resulting from the conversion of electromagnetic energy into mechanical displacement of molecules within an absorber having a non-unitary relative dielectric constant.
  • Magnetic losses refer to a reduction in EMI resulting from the conversion of electromagnetic energy into a realignment of magnetic moments within an EMI absorber.
  • Example embodiments are provided so that this disclosure will be thorough, and will fully convey the scope to those who are skilled in the art. Numerous specific details are set forth such as examples of specific components, devices, and methods, to provide a thorough understanding of embodiments of the present disclosure. It will be apparent to those skilled in the art that specific details need not be employed, that example embodiments may be embodied in many different forms, and that neither should be construed to limit the scope of the disclosure. In some example embodiments, well-known processes, well-known device structures, and well- known technologies are not described in detail.
  • parameter X may have a range of values from about A to about Z.
  • disclosure of two or more ranges of values for a parameter subsume all possible combination of ranges for the value that might be claimed using endpoints of the disclosed ranges.
  • parameter X is exemplified herein to have values in the range of 1 - 10, or 2 - 9, or 3 - 8, it is also envisioned that Parameter X may have other ranges of values including 1 - 9, 1 - 8, 1 - 3, 1 - 2, 2 - 10, 2 - 8, 2 - 3, 3 - 10, and 3 - 9.
  • the term "about” as used herein when modifying a quantity of an ingredient or reactant of the invention or employed refers to variation in the numerical quantity that can happen through typical measuring and handling procedures used, for example, when making concentrates or solutions in the real world through inadvertent error in these procedures; through differences in the manufacture, source, or purity of the ingredients employed to make the compositions or carry out the methods; and the like.
  • the term “about” also encompasses amounts that differ due to different equilibrium conditions for a composition resulting from a particular initial mixture. Whether or not modified by the term “about”, the claims include equivalents to the quantities.
  • first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms may be only used to distinguish one element, component, region, layer or section from another region, layer or section. Terms such as “first,” “second,” and other numerical terms when used herein do not imply a sequence or order unless clearly indicated by the context. Thus, a first element, component, region, layer or section could be termed a second element, component, region, layer or section without departing from the teachings of the example embodiments.
  • Spatially relative terms such as “inner,” “outer,” “beneath”, “below”, “lower”, “above”, “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. Spatially relative terms may be intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the example term “below” can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Combustion & Propulsion (AREA)
  • Thermal Sciences (AREA)
  • Materials Engineering (AREA)
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  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
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Abstract

Selon divers aspects, les modes de réalisation de l'invention donnés à titre d'exemple concernent des absorbeurs d'EMI thermoconducteurs qui comprennent de manière générale des particules thermoconductrices, des particules absorbant les EMI et du carbure de silicium. Le carbure de silicium est présent en quantité suffisante pour améliorer synergiquement la conductivité thermique et/ou l'absorption d'EMI. Par exemple, un des modes de réalisation de l'absorbeur d'EMI thermoconducteur comprend du carbure de silicium, des flocons magnétiques, de la ferrite de manganèse-zinc, de l'alumine et du fer carbonyle.
PCT/US2016/014736 2015-02-06 2016-01-25 Absorbeurs d'interférences électromagnétiques (emi) thermoconducteurs comportant du carbure de silicium Ceased WO2016126449A1 (fr)

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EP16746968.3A EP3254541B1 (fr) 2015-02-06 2016-01-25 Absorbeurs d'interférences électromagnétiques (emi) thermoconducteurs comportant du carbure de silicium
CN201680006672.0A CN107207950B (zh) 2015-02-06 2016-01-25 具有碳化硅的导热电磁干扰(emi)吸收剂

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US201562112758P 2015-02-06 2015-02-06
US62/112,758 2015-02-06
US14/683,870 2015-04-10
US14/683,870 US20160233173A1 (en) 2015-02-06 2015-04-10 Thermally-conductive electromagnetic interference (emi) absorbers with silicon carbide
US14/928,189 US11229147B2 (en) 2015-02-06 2015-10-30 Thermally-conductive electromagnetic interference (EMI) absorbers with silicon carbide
US14/928,189 2015-10-30

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US12369291B2 (en) 2015-02-06 2025-07-22 Laird Technologies, Inc. Thermally-conductive electromagnetic interference (EMI) absorbers with silicon carbide
US11678470B2 (en) 2015-02-06 2023-06-13 Laird Technologies, Inc. Thermally-conductive electromagnetic interference (EMI) absorbers with silicon carbide
US11229147B2 (en) 2015-02-06 2022-01-18 Laird Technologies, Inc. Thermally-conductive electromagnetic interference (EMI) absorbers with silicon carbide
US10477739B2 (en) 2015-10-16 2019-11-12 Laird Technologies, Inc. Thermally-conductive electromagnetic interference (EMI) absorbers positioned or positionable between board level shields and heat sinks
KR102527176B1 (ko) 2019-06-10 2023-04-28 후지고분시고오교오가부시끼가이샤 전자파흡수성 열전도성 조성물 및 그 시트
KR20210022748A (ko) * 2019-06-10 2021-03-03 후지고분시고오교오가부시끼가이샤 전자파흡수성 열전도성 조성물 및 그 시트
CN115669248A (zh) * 2020-05-22 2023-01-31 莱尔德技术股份有限公司 包括铝粉的导热电磁干扰emi吸收体
KR20230008208A (ko) * 2020-05-22 2023-01-13 라이르드 테크놀로지스, 아이엔씨 알루미늄 분말을 포함하는 전자파 장해(emi) 흡수체
WO2021237140A1 (fr) 2020-05-22 2021-11-25 Laird Technologies Inc. Absorbeurs d'interférences électromagnétiques (emi) thermoconducteurs comportant de la poudre d'aluminium
KR102740342B1 (ko) * 2020-05-22 2024-12-06 라이르드 테크놀로지스, 아이엔씨 알루미늄 분말을 포함하는 전자파 장해(emi) 흡수체
US12289876B2 (en) 2020-05-22 2025-04-29 Laird Technologies, Inc. Thermally-conductive electromagnetic interference (EMI) absorbers including aluminum powder
WO2025133799A1 (fr) * 2023-12-19 2025-06-26 3M Innovative Properties Company Matériaux à absorption électromagnétique
WO2026074085A1 (fr) * 2024-10-03 2026-04-09 Compagnie Generale Des Etablissements Michelin Matériau d'interface thermique

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