WO2016129873A3 - 발광소자 및 발광 다이오드 - Google Patents

발광소자 및 발광 다이오드 Download PDF

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Publication number
WO2016129873A3
WO2016129873A3 PCT/KR2016/001255 KR2016001255W WO2016129873A3 WO 2016129873 A3 WO2016129873 A3 WO 2016129873A3 KR 2016001255 W KR2016001255 W KR 2016001255W WO 2016129873 A3 WO2016129873 A3 WO 2016129873A3
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WO
WIPO (PCT)
Prior art keywords
light
contact electrode
semiconductor layer
conductive semiconductor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2016/001255
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English (en)
French (fr)
Other versions
WO2016129873A2 (ko
WO2016129873A4 (ko
Inventor
김종규
이소라
윤여진
김재권
이준섭
강민우
오세희
김현아
임형진
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
Original Assignee
Seoul Viosys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020150022603A external-priority patent/KR102320797B1/ko
Priority claimed from KR1020150023752A external-priority patent/KR20160101348A/ko
Priority claimed from KR1020150037560A external-priority patent/KR20160112244A/ko
Priority claimed from KR1020150073598A external-priority patent/KR20160139182A/ko
Priority claimed from KR1020150073596A external-priority patent/KR102424364B1/ko
Priority claimed from KR1020150167920A external-priority patent/KR101769077B1/ko
Priority to CN201911070837.2A priority Critical patent/CN110854250B/zh
Priority to CN201910175807.1A priority patent/CN110061027B/zh
Priority to DE112016000731.0T priority patent/DE112016000731T5/de
Priority to EP16749413.7A priority patent/EP3258507A2/en
Priority to CN201911073767.6A priority patent/CN110690249B/zh
Priority to CN201680010257.2A priority patent/CN107223285B/zh
Priority to CN201911037711.5A priority patent/CN110676286B/zh
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Priority to CN201910953376.7A priority patent/CN110690242B/zh
Publication of WO2016129873A2 publication Critical patent/WO2016129873A2/ko
Publication of WO2016129873A3 publication Critical patent/WO2016129873A3/ko
Publication of WO2016129873A4 publication Critical patent/WO2016129873A4/ko
Priority to US15/409,306 priority patent/US10438992B2/en
Anticipated expiration legal-status Critical
Priority to US16/594,239 priority patent/US11282892B2/en
Priority to US17/697,410 priority patent/US20220208851A1/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Led Device Packages (AREA)

Abstract

본 발명은 발광소자에 관한 것으로, 본 발명의 일 실시예에 따른 발광소자는, 제1 도전형 반도체층, 제2 도전형 반도체층 및 상기 제1 도전형 반도체층과 제2 도전형 반도체층 사이에 개재된 활성층을 포함하는 발광구조체; 상기 발광구조체 상에 위치하고, 상기 제1 도전형 반도체층 및 제2 도전형 반도체층에 각각 오믹 컨택하는 제1 컨택 전극 및 제2 컨택 전극; 상기 제1 컨택 전극 및 제2 컨택 전극의 절연을 위해 상기 제1 컨택 전극 및 제2 컨택 전극의 일부를 덮는 절연층; 상기 제1 컨택 전극과 제2 컨택 전극 각각에 전기적으로 연결된 제1 전극 패드 및 제2 전극 패드; 및 상기 절연층 상에 형성되고, 상기 발광구조체에서 발생된 열을 방열하는 방열패드를 포함하고, 상기 방열패드는 평면 형상의 적어도 세 면이 외면으로 노출될 수 있다.
PCT/KR2016/001255 2015-02-13 2016-02-04 발광소자 및 발광 다이오드 Ceased WO2016129873A2 (ko)

Priority Applications (11)

Application Number Priority Date Filing Date Title
EP16749413.7A EP3258507A2 (en) 2015-02-13 2016-02-04 Light-emitting element and light-emitting diode
CN201910175807.1A CN110061027B (zh) 2015-02-13 2016-02-04 发光元件
CN201680010257.2A CN107223285B (zh) 2015-02-13 2016-02-04 发光元件以及发光二极管
CN201911037711.5A CN110676286B (zh) 2015-02-13 2016-02-04 发光元件以及发光二极管
CN201911070837.2A CN110854250B (zh) 2015-02-13 2016-02-04 发光元件
CN201910953376.7A CN110690242B (zh) 2015-02-13 2016-02-04 发光元件
CN201911073767.6A CN110690249B (zh) 2015-02-13 2016-02-04 发光元件
DE112016000731.0T DE112016000731T5 (de) 2015-02-13 2016-02-04 Lichtaussendeelement und leuchtdiode
US15/409,306 US10438992B2 (en) 2015-02-13 2017-01-18 Light-emitting element and light-emitting diode
US16/594,239 US11282892B2 (en) 2015-02-13 2019-10-07 Light-emitting element including intermediate connection and branches
US17/697,410 US20220208851A1 (en) 2015-02-13 2022-03-17 Light-emitting element and light-emitting diode

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
KR1020150022603A KR102320797B1 (ko) 2015-02-13 2015-02-13 발광 소자
KR10-2015-0022603 2015-02-13
KR1020150023752A KR20160101348A (ko) 2015-02-17 2015-02-17 발광 소자 및 발광 다이오드
KR10-2015-0023752 2015-02-17
KR10-2015-0037560 2015-03-18
KR1020150037560A KR20160112244A (ko) 2015-03-18 2015-03-18 발광 소자 및 발광 다이오드
KR10-2015-0073598 2015-05-27
KR10-2015-0073596 2015-05-27
KR1020150073596A KR102424364B1 (ko) 2015-05-27 2015-05-27 발광소자
KR1020150073598A KR20160139182A (ko) 2015-05-27 2015-05-27 발광소자
KR1020150167920A KR101769077B1 (ko) 2015-11-27 2015-11-27 고효율 발광 소자
KR10-2015-0167920 2015-11-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US15/409,306 Continuation-In-Part US10438992B2 (en) 2015-02-13 2017-01-18 Light-emitting element and light-emitting diode

Publications (3)

Publication Number Publication Date
WO2016129873A2 WO2016129873A2 (ko) 2016-08-18
WO2016129873A3 true WO2016129873A3 (ko) 2016-10-06
WO2016129873A4 WO2016129873A4 (ko) 2016-12-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2016/001255 Ceased WO2016129873A2 (ko) 2015-02-13 2016-02-04 발광소자 및 발광 다이오드

Country Status (5)

Country Link
US (3) US10438992B2 (ko)
EP (1) EP3258507A2 (ko)
CN (7) CN110061027B (ko)
DE (1) DE112016000731T5 (ko)
WO (1) WO2016129873A2 (ko)

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