WO2016206348A1 - Procédé de fabrication d'un ensemble luminescent à puce - Google Patents

Procédé de fabrication d'un ensemble luminescent à puce Download PDF

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Publication number
WO2016206348A1
WO2016206348A1 PCT/CN2016/000281 CN2016000281W WO2016206348A1 WO 2016206348 A1 WO2016206348 A1 WO 2016206348A1 CN 2016000281 W CN2016000281 W CN 2016000281W WO 2016206348 A1 WO2016206348 A1 WO 2016206348A1
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WIPO (PCT)
Prior art keywords
powder
luminescent powder
luminescent
chip
modified
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Ceased
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PCT/CN2016/000281
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English (en)
Chinese (zh)
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林立宸
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Individual
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Individual
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Priority claimed from CN201510355192.2A external-priority patent/CN105222091A/zh
Priority claimed from CN201510353847.2A external-priority patent/CN105098003A/zh
Application filed by Individual filed Critical Individual
Publication of WO2016206348A1 publication Critical patent/WO2016206348A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/08—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters for producing coloured light, e.g. monochromatic; for reducing intensity of light
    • F21V9/12—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters for producing coloured light, e.g. monochromatic; for reducing intensity of light with liquid-filled chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means

Definitions

  • the invention relates to a method for preparing a chip-scale light-emitting component, in particular to a surface or five-sided (five-sided or five-sided rectangular or rectangular chip mounted on five surfaces exposed on a substrate) having a thickness of luminescent powder layer A method of preparing a chip-scale light-emitting component.
  • illuminating components such as white light illuminating LED devices
  • a potting and packaging process technology that is, a mixture of phosphor and glue is injected into a chip holder that has been bonded with a solid crystal and a gold wire to complete the phosphor on the surface of the LED chip. Coating.
  • the phosphor coating obtained by this method has a non-uniform structure from the center to the edge.
  • the potting and packaging process is to inject a powder mixture of the same phosphor concentration and weight into each die at a time, but in actual production, the fluorescence of the powder mixture per infusion between the same batch of LED tubes
  • the powder concentration cannot be precisely controlled, so the phosphor layer will have a certain difference in shape, which makes it difficult to control the brightness uniformity and color temperature uniformity of the exit spot, resulting in a large chromaticity difference between the devices.
  • the actual microscopic surface of the coating glue droplet is uneven, when the light is emitted, white color unevenness may be formed, resulting in local yellowish or bluish unevenness flare.
  • the main object of the present invention is to provide a method for preparing a chip-scale light-emitting assembly and a method for manufacturing a surface-modified luminescent powder, which can efficiently prepare a chip-level illuminating device having a surface or a five-sided luminescent powder layer having a uniform thickness. It can solve the problem that the surface structure of the chip-level light-emitting component caused by the prior art is uneven, resulting in low component quality and low luminous efficiency, and can effectively improve the chip-level light-emitting component with a thickness of less than 120 micrometers. Light effect.
  • the object of the present invention is achieved by the following technical solutions.
  • the object of the present invention is achieved by the following technical solutions.
  • the invention provides a method for preparing a chip-level light-emitting component, the preparation method comprising: providing a surface-modified luminescent powder, the surface-modified luminescent powder comprising at least one luminescent powder and at least one covering the luminescent powder a granule or a liquid film body; and a luminescent powder modified by the surface modification process on the substrate to form a chip-level illuminating group
  • the above-mentioned chip-level light-emitting component has a luminescent powder layer on its surface or on five sides.
  • the object of the present invention can also be further achieved by the following technical measures.
  • the luminescent powder described above is a phosphor or any of the light-conducting powders.
  • the granules described above are one selected from the group consisting of glass frit, graphene powder, silica powder, silica gel or powder, epoxy resin gum or powder, and paraffin wax. Hydrocarbon and ceramic powder.
  • the surface modified luminescent powder has a particle size of less than 100 microns.
  • the liquid film body is one selected from the group consisting of glass powder, graphene powder, silica powder, silica gel or powder, epoxy resin glue or powder, Paraffin and ceramic powder.
  • the above fixed procedure includes: a vacuum coating process, an ultrasonic oscillating program, an ultraviolet ray irradiation program, and a heating program.
  • the appropriate temperature for the heating procedure described above is between 50 and 200 degrees Celsius.
  • the thickness of the luminescent powder layer is less than 120 microns, preferably, the thickness of the luminescent powder layer is less than 50 microns.
  • the present invention provides a method for producing a surface-modified luminescent powder, the method comprising: providing a polymer comprising epoxy resin or silica gel or other viscous material; performing a mixing procedure to polymerize the above The mixing process comprises agitation, grinding and shaking; a covering procedure is performed to attach the above polymer to the luminescent powder; and a surface-modified luminescent powder is formed.
  • the object of the present invention can also be further achieved by the following technical measures.
  • the organic solvent described above is selected from the group consisting of methanol, ethanol, isopropanol, and acetone.
  • the luminescent powder described above is a phosphor or any of the light-conducting powders.
  • the luminescent powder has a particle size of less than 100 microns.
  • the present invention has at least the following advantages and benefits:
  • the above method can efficiently prepare a chip-level light-emitting component having a surface or a five-sided luminescent powder layer having a uniform thickness, which can solve both
  • the surface structure of the chip-level light-emitting component caused by the technology is uneven, resulting in low component quality and low luminous efficiency, and at the same time, the chip-level light-emitting component having a thickness of less than 120 micrometers can be manufactured, and the light effect can be effectively improved. Therefore, it can be widely used in the light lighting industry.
  • Figure 1 is a schematic view showing a surface-modified luminescent powder of a second embodiment of the present invention
  • Figure 2 is a flow chart showing the second step of the second embodiment of the present invention.
  • Figure 3 is a scanning electron microscope diagram A of a chip scale light-emitting assembly made according to the preparation method of the present invention
  • Figure 4 is a scanning electron microscope image B of a chip scale light-emitting assembly made according to the preparation method of the present invention
  • Figure 5 is a surface scanning electron microscope image C of a chip scale light-emitting assembly made according to the preparation method of the present invention
  • 6 is an optical microscope and a scanning electron microscope image of a chip scale light-emitting assembly made by potting and packaging technology
  • SEM 7 is a scanning electron micrograph (SEM) image of a conventional chip-level light-emitting assembly prepared by adhering a phosphor to a glue in a conventionally known technique.
  • the present invention provides a method of fabricating a chip-scale light-emitting assembly, the method comprising: providing a surface-modified luminescent powder, the surface-modified luminescent powder comprising at least one luminescent powder And at least one granule or liquid film covering the luminescent powder; and fixing the surface-modified luminescent powder to the substrate by a fixing process to form a chip-scale illuminating component, wherein the chip-level illuminating component The surface or five sides have a layer of luminescent powder.
  • the luminescent powder described above is a phosphor or any of the light-conducting powders.
  • the granules are selected from one of the following groups and any combination thereof: glass frit, graphene powder, silica powder, silica gel or powder, epoxy resin gum or powder and paraffin hydrocarbon And ceramic powder.
  • the surface modified luminescent powder has a particle size of less than 100 microns.
  • liquid film body is selected from one of the following groups and any combination thereof: glass powder, graphene powder, silica powder, silica gel or powder, epoxy resin glue or powder and paraffin wax Hydrocarbon and ceramic powder.
  • the above fixed procedure includes: a vacuum coating process, an ultrasonic oscillating program, an ultraviolet ray irradiation program, and a heating program.
  • the appropriate temperature of the heating procedure described above is between 50 and 200 degrees Celsius.
  • the thickness of the luminescent powder layer is less than 120 microns, preferably, the thickness of the luminescent powder layer is less than 50 microns.
  • a method of producing a surface-modified luminescent powder comprising: providing a polymer comprising an epoxy resin or silica gel or other viscous The mixing process is performed to mix the above-mentioned polymer, which comprises stirring, grinding and shaking; a coating procedure is performed to attach the above polymer to the luminescent powder; and a surface-modified luminescent powder is formed.
  • the luminescent powder described above is a phosphor or any of the light-conducting powders.
  • the luminescent powder has a particle size of less than 100 microns.
  • FIG. 1 is a surface-modified luminescent powder prepared according to a second embodiment of the present invention, which can be used as a luminescent powder layer of a chip-scale illuminating assembly.
  • the method for preparing a chip-scale light-emitting component having a surface or five-sided luminescent powder layer comprises: providing a surface-modified luminescent powder, the surface-modified luminescent powder comprising at least one a luminescent powder 1 and at least one granule 2 or a liquid film body 3 covering the luminescent powder; and a luminescent powder 31 modified by the surface modification by a fixing process to form a chip-level illuminating component,
  • the illuminating powder 1 may be a phosphor or any illuminable powder
  • the granule 2 may be a glass powder or a graphene powder.
  • silica powder, silica gel or powder, epoxy resin or powder and any of paraffinic hydrocarbons and ceramic powders or combinations thereof comprises: providing a surface-modified luminescent powder, the surface-modified luminescent powder comprising at least one a luminescent powder 1 and at least one granule 2 or a liquid film body 3 covering the luminescent powder
  • Step 1 Spread the luminescent powder 1 evenly on the workbench.
  • the above-mentioned granules 2 are uniformly attached to the luminescent powder 1 by a mixing procedure to form a surface-modified luminescent powder 31, and the mixing procedure is to uniformly adhere the granules having a small particle size by stirring.
  • the surface-modified luminescent powder 31 can be used as a luminescent powder layer of a chip-scale illuminating component on a luminescent powder having a large particle size.
  • Step 3 Fixing the surface-modified luminescent powder of the second step on the substrate by a fixing process to form a surface-level or five-chip luminescent component having a luminescent powder layer, and the above-mentioned fixing procedure includes ultrasonic waves. Oscillation procedures, UV irradiation procedures and heating procedures.
  • the raw material of the liquid film body 3 described in the above step 2 is glass powder, graphene powder, silica powder, silica gel glue or powder, epoxy resin glue or powder, paraffin hydrocarbon and ceramic powder, or a combination thereof.
  • the fixing procedure described in the above step 3 further includes a vacuum coating method.
  • the optimum temperature for the above heating procedure is between 50 and 200 degrees Celsius.
  • the chip-level light-emitting component having the luminescent powder layer prepared on the surface according to the specific embodiment is subjected to surface structure analysis by a scanning electron microscope, and the analysis spectrum thereof is as shown in FIG. 3, FIG. 4 and FIG. 5, and is utilized according to FIG.
  • the surface of the chip-scale light-emitting component produced by the preparation step of the present invention has a uniform thickness of the luminescent powder layer, and the thickness of the luminescent powder layer is between 30 and 35 microns.
  • the optical microscope and the electron microscope analysis image are as shown in FIG. 6 and FIG.
  • the luminescent powder layer on the surface of the chip-level illuminating component is The luminescent powder is unevenly dispersed and cannot completely cover all surfaces or five sides of the component. It is thus proved that the preparation method of the chip-scale illuminating component provided by the invention has unpredictable effects, and the thickness of the luminescent powder layer can be less than 120 micrometers. And a light-stable chip-level light-emitting component.
  • the above method can efficiently prepare a chip-level luminescence with a uniform thickness of a luminescent powder layer on a surface or five sides.
  • the component can solve the problem that the surface structure of the light-emitting component caused by the prior art is uneven, resulting in low quality of the chip-level light-emitting component and low luminous efficiency, and at the same time, because the chip-level light-emitting component having a thickness of less than 120 micrometers can be manufactured, Effectively improve light efficiency, so it can be widely used in the light lighting industry.

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Luminescent Compositions (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un ensemble luminescent à puce. Le procédé de fabrication consiste à : fournir une poudre luminescente à surface modifiée (31), la poudre luminescente à surface modifiée (31) comprenant au moins un type de poudre luminescente (1) ou au moins un type de granules (2) ou de corps de film à l'état liquide (3) enrobant la poudre luminescente (1) ; et fixer, à l'aide d'une procédure fixe, la poudre luminescente à surface modifiée (31) sur un substrat pour former un ensemble luminescent à puce, des surfaces ou cinq côtés de l'ensemble luminescent à puce ayant une poudre luminescente.
PCT/CN2016/000281 2015-06-24 2016-05-26 Procédé de fabrication d'un ensemble luminescent à puce Ceased WO2016206348A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN201510353847.2 2015-06-24
CN201510355192.2A CN105222091A (zh) 2015-06-24 2015-06-24 一种具有可调整发光粉层中特定发光粉悬浮物悬浮位置之制造方法
CN201510353847.2A CN105098003A (zh) 2015-06-24 2015-06-24 一种具有干燥特性经加工并可快速融合于基板之发光粉制造方法
CN201510355192.2 2015-06-24

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Publication Number Publication Date
WO2016206348A1 true WO2016206348A1 (fr) 2016-12-29

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PCT/CN2016/000281 Ceased WO2016206348A1 (fr) 2015-06-24 2016-05-26 Procédé de fabrication d'un ensemble luminescent à puce

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114744099A (zh) * 2021-01-07 2022-07-12 李宛儒 可降低出光面温度的芯片级封装的发光芯片的制备方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004153109A (ja) * 2002-10-31 2004-05-27 Matsushita Electric Works Ltd 発光装置及びその製造方法
CN101081980A (zh) * 2006-06-02 2007-12-05 夏普株式会社 波长变换构件和发光装置
CN103367611A (zh) * 2012-03-28 2013-10-23 日亚化学工业株式会社 波长变换用无机成型体及其制造方法以及发光装置
CN104334680A (zh) * 2012-08-13 2015-02-04 柯尼卡美能达株式会社 荧光体分散液的制造方法及led装置的制造方法
CN105047799A (zh) * 2015-06-24 2015-11-11 林立宸 一种发光粉之制造方法
CN105098003A (zh) * 2015-06-24 2015-11-25 林立宸 一种具有干燥特性经加工并可快速融合于基板之发光粉制造方法
CN105161593A (zh) * 2015-06-24 2015-12-16 林立宸 一种可将一种粉快速融合于基板之制造方法
CN105222091A (zh) * 2015-06-24 2016-01-06 林立宸 一种具有可调整发光粉层中特定发光粉悬浮物悬浮位置之制造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004153109A (ja) * 2002-10-31 2004-05-27 Matsushita Electric Works Ltd 発光装置及びその製造方法
CN101081980A (zh) * 2006-06-02 2007-12-05 夏普株式会社 波长变换构件和发光装置
CN103367611A (zh) * 2012-03-28 2013-10-23 日亚化学工业株式会社 波长变换用无机成型体及其制造方法以及发光装置
CN104334680A (zh) * 2012-08-13 2015-02-04 柯尼卡美能达株式会社 荧光体分散液的制造方法及led装置的制造方法
CN105047799A (zh) * 2015-06-24 2015-11-11 林立宸 一种发光粉之制造方法
CN105098003A (zh) * 2015-06-24 2015-11-25 林立宸 一种具有干燥特性经加工并可快速融合于基板之发光粉制造方法
CN105161593A (zh) * 2015-06-24 2015-12-16 林立宸 一种可将一种粉快速融合于基板之制造方法
CN105222091A (zh) * 2015-06-24 2016-01-06 林立宸 一种具有可调整发光粉层中特定发光粉悬浮物悬浮位置之制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114744099A (zh) * 2021-01-07 2022-07-12 李宛儒 可降低出光面温度的芯片级封装的发光芯片的制备方法

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