WO2017018481A1 - Système de traitement de substrat, procédé de traitement de substrat et support d'informations - Google Patents

Système de traitement de substrat, procédé de traitement de substrat et support d'informations Download PDF

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Publication number
WO2017018481A1
WO2017018481A1 PCT/JP2016/072157 JP2016072157W WO2017018481A1 WO 2017018481 A1 WO2017018481 A1 WO 2017018481A1 JP 2016072157 W JP2016072157 W JP 2016072157W WO 2017018481 A1 WO2017018481 A1 WO 2017018481A1
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WO
WIPO (PCT)
Prior art keywords
substrate
guard
nozzle
mist
processing liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2016/072157
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English (en)
Japanese (ja)
Inventor
伊藤　規宏
治郎 東島
信博 緒方
貴久 大塚
裕一 道木
佑介 橋本
一博 相浦
後藤　大輔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2016122690A external-priority patent/JP6740028B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to US15/747,921 priority Critical patent/US11024518B2/en
Priority to CN201680044518.2A priority patent/CN107851572B/zh
Priority to KR1020187002473A priority patent/KR102566736B1/ko
Publication of WO2017018481A1 publication Critical patent/WO2017018481A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B17/00—Methods preventing fouling
    • B08B17/02—Preventing deposition of fouling or of dust
    • B08B17/025—Prevention of fouling with liquids by means of devices for containing or collecting said liquids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
    • B08B2203/0229—Suction chambers for aspirating the sprayed liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
    • B08B2203/0264—Splash guards
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/022—Cleaning travelling work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel

Definitions

  • the present invention relates to a technique for performing liquid processing on a substrate by supplying the processing liquid to a rotating substrate.
  • the manufacturing process of a semiconductor device includes liquid processing such as chemical cleaning processing or wet etching processing.
  • liquid processing apparatus that performs such liquid processing on a substrate such as a semiconductor wafer
  • a holding unit that holds the substrate in a processing container called a chamber
  • a rotating mechanism that rotates the substrate such as a semiconductor wafer
  • processing on the rotating substrate A device is known that includes a nozzle that supplies a liquid and a cup that receives the shaken processing liquid.
  • processing liquid supplied to the substrate is collected by the cup, but a part of the misted processing liquid scatters outside the cup.
  • an atmosphere derived from the processing liquid, especially chemical liquid is formed around the substrate, and chemical liquid components in the atmosphere adhere to the substrate during liquid processing and contaminate the substrate. There is.
  • the humidity around the substrate increases, which may adversely affect the drying process of the substrate.
  • the present invention provides a technique capable of preventing the processing liquid scattered from the substrate outside the cup from adhering to the inner wall of the chamber.
  • a substrate holding unit that holds a substrate, at least one processing liquid nozzle that discharges a processing liquid to the substrate held by the substrate holding unit, the substrate holding unit, and the processing liquid
  • a processing container that accommodates a nozzle
  • a fixed cup body that is arranged around the substrate holding portion and that is relatively immovable with respect to the processing container that receives at least the processing liquid supplied to the substrate or the mist of the processing liquid
  • the fixing A mist guard that is provided outside the fixed cup body so as to surround the cup body, and that blocks liquid that splashes outward beyond the upper portion of the fixed cup body
  • An elevating mechanism that elevates and lowers to a second guard height lower than the guard height, wherein the mist guard includes a cylindrical tube portion, and an upper portion of the tube portion toward the inside of the tube portion of the fixed cup body. And a projecting portion projecting toward the substrate processing apparatus is provided.
  • a substrate holding unit that holds a substrate, at least one processing liquid nozzle that discharges a processing liquid onto an upper surface of the substrate held by the substrate holding unit, and the substrate holding unit,
  • a processing container that accommodates the processing liquid nozzle, a fixed cup body that is relatively fixed to the processing container that is disposed around the substrate holding unit and that receives the processing liquid supplied to the substrate or the mist of the processing liquid;
  • a mist guard that is provided outside the fixed cup body so as to surround the fixed cup body, blocks liquid that splashes outward beyond the fixed cup body, and an elevating mechanism that raises and lowers the mist guard;
  • the mist guard includes a cylindrical tube portion, and a projecting portion that protrudes from an upper end of the tube portion toward the fixed cup body.
  • a computer program when a computer program is stored in a storage medium, and the computer program is executed by a computer constituting a control device of the substrate processing apparatus, the computer processes the substrate processing.
  • a storage medium for controlling the operation of the apparatus to execute the above substrate processing method.
  • the mist guard having the overhanging portion, it is possible to prevent the processing liquid scattered over the cup from adhering to the inner wall of the processing container.
  • FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment.
  • the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.
  • the substrate processing system 1 includes a carry-in / out station 2 and a processing station 3.
  • the carry-in / out station 2 and the processing station 3 are provided adjacent to each other.
  • the loading / unloading station 2 includes a carrier placement unit 11 and a conveyance unit 12. A plurality of carriers C that accommodate a plurality of wafers W in a horizontal state are placed on the carrier placement unit 11.
  • the transfer unit 12 is provided adjacent to the carrier placement unit 11 and includes a substrate transfer device 13 and a delivery unit 14 inside.
  • the substrate transfer device 13 includes a substrate holding mechanism that holds the wafer W. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and turn around the vertical axis, and transfers the wafer W between the carrier C and the delivery unit 14 using the substrate holding mechanism. Do.
  • the processing station 3 is provided adjacent to the transfer unit 12.
  • the processing station 3 includes a transport unit 15 and a plurality of processing units 16.
  • the plurality of processing units 16 are provided side by side on the transport unit 15.
  • the transfer unit 15 includes a substrate transfer device 17 inside.
  • the substrate transfer device 17 includes a substrate holding mechanism that holds the wafer W. Further, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the delivery unit 14 and the processing unit 16 using the substrate holding mechanism. I do.
  • the processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17.
  • the substrate processing system 1 includes a control device 4.
  • the control device 4 is a computer, for example, and includes a control unit 18 and a storage unit 19.
  • the storage unit 19 stores a program for controlling various processes executed in the substrate processing system 1.
  • the control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19.
  • Such a program may be recorded in a computer-readable storage medium and installed in the storage unit 19 of the control device 4 from the storage medium.
  • Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.
  • the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11 and receives the taken-out wafer W. Place on the transfer section 14.
  • the wafer W placed on the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16.
  • the wafer W loaded into the processing unit 16 is processed by the processing unit 16, then unloaded from the processing unit 16 by the substrate transfer device 17, and placed on the delivery unit 14. Then, the processed wafer W placed on the delivery unit 14 is returned to the carrier C of the carrier platform 11 by the substrate transfer device 13.
  • FIG. 2 is a diagram showing a schematic configuration of the processing unit 16.
  • the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing fluid supply unit 40, and a cup 50.
  • the processing fluid supply unit 40 supplies a processing fluid to the wafer W.
  • the chamber 20 accommodates the substrate holding mechanism 30, the processing fluid supply unit 40, and the cup 50.
  • An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20.
  • the FFU 21 forms a down flow in the chamber 20.
  • a rectifying plate 22 having a large number of holes (not shown) formed immediately below the outlet of the FFU 21 is provided to optimize the distribution of the downflow gas flowing through the space in the chamber 20.
  • the substrate holding mechanism 30 includes a holding unit (substrate holding unit) 31, a rotating shaft 32, and a driving unit 33.
  • the holding unit 31 can hold the wafer W horizontally.
  • the drive unit 33 rotates the holding unit 31 via the rotation shaft 32, thereby rotating the wafer W held by the holding unit 31 around the vertical axis.
  • the holding unit 31 includes a disk-shaped base plate 31a, a plurality of holding elements 31b that hold the wafer W provided on the base plate 31a, and the wafer W that is separated from the holding element 31b when the wafer W is loaded into and unloaded from the processing unit 16. It has the lift pin 31c which supports a lower surface.
  • the holding element 31b can be configured by a movable holding claw attached to the base plate 31a capable of holding / releasing the peripheral edge of the wafer W, a holding pin fixed to the base plate 31a, or the like.
  • the lift pin 31c is fixed to a ring-shaped lift pin plate 31d stored in a recess formed on the upper surface of the base plate 31a.
  • the lift pin plate 31d can be lifted by a lifting mechanism (not shown) to lift the wafer W.
  • the wafer W can be transferred between the arm of the substrate transfer device 17 that has entered the chamber 20 and the lift pin plate 31d that has been lifted.
  • the cup (cup assembly) 50 will be described in detail below.
  • the cup 50 has a role of controlling the airflow around the wafer W while collecting the processing liquid scattered from the wafer W.
  • the cup 50 is arrange
  • the cup 50 is composed of a plurality of components.
  • the cup 50 has a stationary (fixed) exhaust cup 51 on the outermost side, and a drainage cup 52 for guiding a processing liquid on the inner side.
  • first rotating cup 53 and the second rotating cup 54 are attached to the base plate 31a of the holding unit 31 and rotate together with the base plate 31a.
  • the first rotating cup 53 and the second rotating cup 54 receive the liquid splashed outward from the wafer W after being supplied to the surface (upper surface) of the wafer W, and are guided obliquely downward (radially outward and downward). To do.
  • the second rotating cup 54 also has a function of guiding the liquid splashed outward from the wafer W after being supplied to the back surface (lower surface) of the wafer W.
  • the first rotating cup 53 and the second rotating cup 54 also have a function of controlling the airflow around the wafer W.
  • the drain cup 52 includes a drain cup body 521, a first movable cup element 522 (first movable cup body), and a second movable cup element 523 (second movable cup body).
  • the drain cup main body 521 has an outer peripheral cylindrical portion 521a that extends in a substantially vertical direction, an overhang portion 521b, a bottom portion 521c, and an inner peripheral portion 521d.
  • the overhanging portion 521b extends from the upper end portion of the outer peripheral cylindrical portion 521a toward the wafer W side.
  • Two convex portions 521e and 521f extend upward from the bottom portion 521c.
  • Liquid reservoirs 522a, 522b, and 522c are defined respectively.
  • the liquid reservoirs 522a, 522b, and 522c are factory waste liquid systems for acidic liquid (DR1), alkaline liquid (DR2), and organic liquid (DR3) through drain lines 523a, 523b, and 523c connected to the liquid reservoirs 522a, 522b, and 522c, respectively. Are connected to each.
  • the first movable cup element 522 and the second movable cup element 523 are fitted to the convex portions 521e and 521f so as to be movable up and down.
  • the first movable cup element 522 and the second movable cup element 523 are moved up and down by a lifting mechanism (not shown).
  • the exhaust cup 51 has an outer peripheral cylindrical portion 511, an overhanging portion 512, a bottom portion 513, and an inner peripheral portion 514.
  • An exhaust passage 551 is formed between the surfaces of the exhaust cup 51 and the drain cup main body 521 facing each other.
  • An exhaust port 552 is provided at the bottom 513 of the exhaust cup 51, and an exhaust duct (exhaust passage) 553 is connected to the exhaust port 552.
  • the exhaust duct 553 is connected to a factory exhaust duct (not shown) of the factory exhaust system in a reduced pressure atmosphere (C-EXH).
  • the exhaust duct 553 is provided with a flow control valve 554 such as a butterfly valve or a damper.
  • the opening degree of the flow control valve 554 By adjusting the opening degree of the flow control valve 554, the flow rate of the gas sucked through the exhaust passage 551 can be adjusted.
  • a device that promotes exhaustion such as an ejector or an exhaust pump, may be interposed in the exhaust duct 553.
  • the processing fluid supply unit 40 has a plurality of nozzles that supply a processing fluid (liquid or gas). As shown in FIG. 3, these nozzles include an SC1 nozzle 411 that discharges SC1 liquid, an AS nozzle 412 that discharges two fluids including DIW (pure water) droplets and nitrogen gas, DHF (rare) A DHF nozzle 413 that discharges hydrofluoric acid), a first DIW nozzle 414 that discharges pure water (DIW), an IPA nozzle 415 that discharges warmed IPA (isopropyl alcohol), and a first nozzle that discharges nitrogen gas downward in the vertical direction. 1 nitrogen gas nozzle 416, second nitrogen gas nozzle 417 that discharges nitrogen gas obliquely downward, SC2 nozzle 418 that discharges SC2 liquid, and second DIW nozzle 419 that discharges pure water (DIW).
  • the AS nozzle 412 makes DIW mist by merging DIW into the flow of nitrogen gas, and discharges two fluids containing the mist of DIW and nitrogen gas.
  • the AS nozzle 412 By supplying only DIW without supplying nitrogen gas to the AS nozzle 412, it is possible to discharge only DIW that has not been made mist from the AS nozzle 412. From the IPA nozzle 415, solvents other than DIW that are compatible with DIW, higher in volatility than DIW, and lower in surface tension than DIW can be discharged.
  • the SC1 nozzle 411 and the AS nozzle 412 are held by the first nozzle arm 421.
  • the DHF nozzle 413, the first DIW nozzle 414, and the IPA nozzle 415 are held by the second nozzle arm.
  • the first nitrogen gas nozzle 416 and the second nitrogen gas nozzle 417 are held by the third nozzle arm.
  • the first to third nozzle arms 421, 422, and 423 can be swung around the vertical axis by the arm driving mechanisms 431, 432, and 433 provided therein, and can be moved up and down in the vertical direction.
  • Each arm drive mechanism 431, 432, 433 is, for example, a rotary motor (not shown) as a turning drive mechanism for realizing the turning function, and an air cylinder as an raising / lowering mechanism (arm lifting mechanism) for realizing the lifting function. (Not shown).
  • the SC1 nozzle 411 and the AS nozzle 412 are moved between the standby place 441 outside the cup 50 and the position directly above the center portion Wc of the wafer W. It can be located at any position (see arrow M1 in FIG. 3).
  • the DHF nozzle 413, the first DIW nozzle 414 and the IPA nozzle 415 are moved directly above the standby position 442 outside the cup 50 and the center portion Wc of the wafer W. It can be located at any position between the positions (see arrow M2 in FIG. 3).
  • the first nitrogen gas nozzle 416 and the second nitrogen gas nozzle 417 are moved directly above the home standby place 443 outside the cup 50 and the center portion Wc of the wafer W. It can be located at any position between the positions (see arrow M3 in FIG. 3).
  • the home position of the corresponding nozzle (411 to 417) and the corresponding nozzle (411 to 417) are at the home position directly above the standby places (441, 442, 443).
  • the position of the corresponding nozzle arm (421, 422, 423) is also referred to as the home position of the nozzle arm.
  • the arm raising / lowering mechanism provided in the arm driving mechanism 431, 432, 433 allows each nozzle arm (421, 422, 423) to move to a high position HN (first (third) arm height) and a low position LN (second ( 4) the arm height) (see FIG. 4), and accordingly, the nozzle carried by the corresponding nozzle arm is moved closer to the wafer W than the wafer W and closer to the wafer. It is possible to move between the separated positions away from W.
  • the SC2 nozzle 418 and the second DIW nozzle 419 are fixed stationary nozzles and are fixed on a floor plate 96 described later.
  • the SC2 nozzle 418 and the second DIW nozzle 419 discharge liquid at a predetermined flow rate so that the liquid discharged from these nozzles 418 and 419 flies in a parabola and falls to the center Wc of the wafer W. Is installed.
  • the cylindrical body 450 extends in the vertical direction inside the rotary shaft 32.
  • the cylindrical body 420 is installed so as not to rotate even if the rotary shaft 32 rotates.
  • one or a plurality of processing fluid supply paths 451 (only one is shown in FIG. 2) extend in the vertical direction.
  • the upper end opening of the processing fluid supply path 451 becomes a lower surface nozzle 452 for supplying the processing fluid.
  • DIW as a rinsing liquid or a purge liquid
  • a nitrogen gas as a dry gas or a purge gas can be supplied to the rear surface (lower surface) of the wafer W.
  • the lower surface nozzle 452 is not referred to.
  • Each nozzle (411 to 419) has a corresponding processing fluid supply source (for example, a chemical supply tank for storing SC1, DHF, etc., a supply source of pure water, nitrogen gas, etc. provided as factory power) Any one of the above processing fluids is supplied from any one (not shown) via a corresponding processing fluid supply mechanism (not shown).
  • the processing fluid supply mechanism includes a supply line that connects each nozzle (411 to 419) and a corresponding processing fluid supply source, and a flow control device such as an on-off valve and a flow control valve provided in the supply line. can do.
  • the processing liquid supplied to the rotating wafer W from the processing liquid nozzle is the surface of the wafer W of the processing liquid. (If liquid is supplied to the surface of the wafer W from two or more nozzles simultaneously) or by shaking off the wafer by centrifugal force, Become scattered. If the scattered droplets adhere to the inner wall surface of the chamber 20 or the apparatus components in the chamber 20, the problems described in the background art may occur.
  • a mist guard 80 is provided on the outer side of the cup 50 in order to prevent or at least greatly suppress the scattered processing liquid from reaching the inner wall surface of the chamber 20.
  • the mist guard 80 includes an outer peripheral cylindrical portion (cylindrical portion) 81 and an overhang portion that extends from the upper end portion of the outer peripheral cylindrical portion 81 toward the inner side of the outer peripheral cylindrical portion 81 (in the radial direction) and protrudes above the exhaust cup 51. 82.
  • a protrusion 83 protruding downward is provided on the lower surface of the tip of the overhang 82.
  • the mist guard 80 is moved up and down by an elevating mechanism 84 (guard elevating mechanism) (see FIG. 3), and three different height positions, that is, a high position HG (first guard height) (in FIG. 2, a one-dot chain line) ), A low position LG (second guard height) (shown by a solid line in FIG. 2) and an intermediate position MG (third guard height) (shown by a two-dot chain line in FIG. 2). See also).
  • the elevating mechanism 84 can be constituted by, for example, three-position air cylinders 84 a.
  • the mist guard 80 has a flange portion 85 that protrudes outward from the outer peripheral cylindrical portion 81.
  • the rod portion 84b of the air cylinder 84a below the flange portion 85 is connected to the mist guard 80 as the rod 84b advances and retreats.
  • the guard 80 moves up and down.
  • the elevating mechanism 84 may be constituted by a linear motion mechanism driven by a rotary motor or a linear motor. In this case, the mist guard 80 can be fixed at an arbitrary height position.
  • FIG. 5 shows the mist guard 80 at the high position HG.
  • the mist guard 80 is supplied to the rotating wafer W from the nozzles (the SC1 nozzle 411, the AS nozzle 412, the DHF nozzle 413, the first DIW nozzle 414, the SC2 nozzle 418, the second DIW nozzle 419, etc.) when at the high position HG.
  • This is the position for most effectively preventing the processing liquid (shown by broken line arrows in FIG. 5) scattered after the wafer W from reaching the inner wall of the chamber 20.
  • the desirable height of the high position HG of the mist guard 80 varies depending on the number of rotations of the wafer W and the processing liquid supply conditions (flow rate, etc.) on the surface of the wafer W, and is preferably determined by experiments.
  • the height of the uppermost portion of the mist guard 80 at the high position HG is 60 mm higher than the height of the surface of the wafer W.
  • the appropriate height of the high position HG of the mist guard 80 varies depending on the number of rotations of the wafer W and the supply conditions (flow rate, etc.) of the processing liquid onto the surface of the wafer W. Is preferably determined.
  • FIG. 6 shows the mist guard 80 at the low position LG.
  • the low position LG is a lower limit position that can be taken by the mist guard 80, and at this time, the protrusion 83 of the protruding portion 82 of the mist guard 80 contacts the upper surface of the protruding portion 512 of the exhaust cup 51. That is, the space between the surfaces of the mist guard 80 and the exhaust cup 51 facing each other is isolated from the upper space of the wafer W in the vicinity of the wafer W. Further, when the mist guard 80 is located at the low position LG, a gas flow from the upper space of the wafer W toward an exhaust port (a slit-shaped opening 97 described later) in the peripheral portion of the chamber 20 (solid arrow in FIG. 5). Is not hindered by the mist guard 80.
  • the intermediate position MG of the mist guard 80 is at an intermediate height between the high position HG and the low position LG described above.
  • the mist guard 80 at the intermediate position MG is indicated by a chain line.
  • the overhanging portion 82 of the mist guard 80 is separated upward from the overhanging portion 512 of the exhaust cup 51 (not as much as when in the high position HG). It can be suppressed to some extent that the processing liquid scattered from the inside reaches the inner wall of the chamber 20.
  • the discharge port NP of the nozzle N (at the above-mentioned separated position) is located inside the overhanging portion 82 of the mist guard 80 as shown in FIG.
  • the nozzle N is located at a position higher than the peripheral end, and does not interfere with the mist guard 80 and passes over the mist guard 80 between the upper position in the plane of the wafer W and the above-described standby position. It can move freely.
  • each arm drive mechanism (431, 432, 433) includes an elevating mechanism
  • the nozzle arm (421, 422, 423) is positioned at a high position when the mist guard 80 is positioned at the intermediate position MG.
  • the corresponding nozzle can pass over the mist guard 80 with a sufficient clearance (without fear of interference). That is, by providing the arm drive mechanism with the lifting mechanism, the intermediate position MG of the mist guard 80 can be set relatively high, and the processing liquid supplied to the wafer W when the mist guard 80 is at the intermediate position MG Scattering beyond the mist guard 80 can be suppressed.
  • the nozzle discharge port can be sufficiently brought close to the surface of the wafer W, and the processing on the surface of the wafer W can be performed. Liquid splash can be reduced.
  • the outer peripheral cylindrical portion 81 of the mist guard 80 is passed through a position where the traces of the liquid discharged from the SC2 nozzle 418 and the second DIW nozzle 419 pass when the mist guard 80 is at the high position.
  • a liquid opening 86 is formed.
  • a cylindrical guard pocket 90 for housing the outer circumferential cylindrical portion 81 of the mist guard 80 is provided outside the outer circumferential cylindrical portion 511 of the exhaust cup 51.
  • the guard pocket 90 is defined by an outer peripheral surface of the outer peripheral cylindrical portion 511 of the exhaust cup 51, a cylindrical vertical wall (vertical wall) 91 facing the outer peripheral cylindrical portion 511, and a bottom wall 92.
  • a plurality of outlets 93 are formed in the bottom wall 92 at equal intervals in the circumferential direction (only one is shown in FIG. 3).
  • a discharge pipe 94 discharge line is connected to the discharge port 93.
  • a floor plate 96 that defines the lower limit of the processing space formed in the chamber 20 from the vertical wall 91 that constitutes the guard pocket 90 toward the outside in the horizontal direction is provided.
  • the floor board 96 surrounds the entire circumference of the mist guard 80. That is, the floor plate 96 is provided with an opening (corresponding to the vertical wall 91) having a diameter slightly larger than the outer shape of the outer peripheral cylindrical portion 81 of the mist guard 80, and the mist guard 80 and the cup 50 are accommodated in the opening. Will be.
  • the floor plate 96 extends from the opening to the side wall 20 a of the chamber 20.
  • a part of the floor plate 96 terminates in front of the side wall 20a of the chamber 20, whereby a slit-shaped opening 97 (gap) is formed between the outer end 96a of the floor plate 96 and the side wall 20a of the chamber 20. .
  • An exhaust space 98 for exhausting the atmosphere of the space (processing space) in the chamber 20 is formed below the floor plate 96.
  • the exhaust space 98 is defined by a floor plate 96, wall bodies such as a side wall 20 a and a bottom wall 20 b of the chamber 20, and a vertical wall 91.
  • the chamber 20 has four side walls 20a, and one slit-like opening 97 is provided along each of the three side walls 20a. These three slit-shaped openings 97 are connected to one common exhaust space 98. Since the remaining one side wall 20a is provided with a loading / unloading port 24 with a shutter 25 for loading / unloading the wafer W into / from the chamber 20, the slit-shaped opening 97 is not provided here.
  • an exhaust port 99 is provided in the bottom wall 20 b of the chamber 20 facing the exhaust space 98.
  • An exhaust pipe 100 (exhaust line) is connected to the exhaust port 99.
  • a discharge pipe 94 joins the exhaust pipe 100.
  • a mist trap (gas-liquid separator) 101 and a flow control valve 102 such as a butterfly valve or a damper are interposed in the exhaust pipe 100 on the downstream side of the junction.
  • the downstream end of the exhaust pipe 100 is connected to a duct (not shown) of a factory exhaust system in a reduced pressure atmosphere.
  • the upper surface of the floor plate 96 is gently inclined so that its height decreases as it approaches the side wall 20 a of the chamber 20.
  • the upper surface of the floor board 96 is smooth and flat.
  • the upper surface of the floor plate 96 is substantially free of unevenness except for a portion where the SC2 nozzle 418 and the second DIW nozzle 419 are provided and a portion where necessary sensors and auxiliary equipment are provided.
  • the gas can flow smoothly toward the slit-shaped opening 97 in the vicinity of the floor plate 96. Further, when the inside of the chamber 20 is cleaned during maintenance, the cleaning liquid flows smoothly into the exhaust space 98 through the slit-shaped opening 97.
  • the lower end of the outer peripheral cylindrical portion 81 of the mist guard 80 in the high position is located slightly above the upper end of the guard pocket 90 as shown in FIG.
  • the mist guard 80 is at the high position HG, almost no droplets of the treatment liquid collide with the vicinity of the lower end of the outer peripheral cylindrical portion 81, and most of the droplets are relatively in the mist guard 80. Collide with a high position. For this reason, there is almost no merit which makes the lower end of the outer periphery cylinder part 81 lower than the upper end of the guard pocket 90.
  • the atmosphere (gas, mist, etc.) in the space between the overhang portion 82 of the mist guard 80 and the overhang portion 512 of the exhaust cup 51 is increased.
  • a plurality of, for example, four cleaning liquid nozzles 110 that discharge cleaning liquid, such as DIW, for cleaning the inner surface of the mist guard 80 are formed on the upper surface of the overhanging portion 512 of the exhaust cup 51.
  • the overhang portions 512 are arranged at equal intervals in the circumferential direction.
  • One of the four cleaning liquid nozzles 110 is shown in FIG.
  • the cleaning liquid supplied from the cleaning liquid supply unit is jetted from the cleaning liquid nozzle 110 toward the lower surface of the overhanging portion 82 of the mist guard 80. Since the lower surface of the overhanging portion 82 is inclined so as to become higher inward in the radial direction of the mist guard 80, the sprayed cleaning liquid proceeds obliquely upward along the lower surface of the overhanging portion 82. At this time, since the projection 83 is in contact with the upper surface of the overhanging portion 512 of the exhaust cup 51, the cleaning liquid does not advance beyond the projection 83.
  • the cleaning liquid sprayed from the cleaning liquid nozzle 110 fills the space between the surfaces of the exhaust cup 51 and the mist guard 80 facing each other.
  • the upper surface 516 of the overhanging portion 512 is inclined so as to become higher inward in the radial direction, so that the cleaning liquid flows down toward the guard pocket 90. Due to the flow of the cleaning liquid, the surfaces of the exhaust cup 51 and the mist guard 80 facing each other are cleaned.
  • the cleaning liquid is discharged from the guard pocket 90 through the discharge pipe 94, flows into the mist trap 101, and flows out to the factory waste liquid system through the drain pipe connected to the mist trap 101.
  • a cleaning liquid nozzle for automatically cleaning the inside and the vicinity of the cup 50 can be provided, but these are not mentioned in this specification.
  • the following operation sequence is automatically executed under the control of the control device 4 by the process recipe and the control program stored in the storage unit 19 of the control device 4 (control unit).
  • the arm of the substrate transfer device 17 loads the wafer W into the chamber 20 (processing container) through the loading / unloading port 24, and the wafer W is held by the holding unit 31 of the substrate holding mechanism 30. After the arm of the substrate transfer device 17 is withdrawn from the chamber, the shutter 25 is closed. When the wafer W is loaded, the mist guard 80 is positioned at a low position. Thereafter, a series of processes are performed on the wafer W.
  • a DHF cleaning process, a DIW rinsing process, an SC1 cleaning process, a DIW rinsing process, an IPA replacement process, and a drying process are sequentially performed on the wafer W will be described.
  • the second nozzle arm 422 pivots (see arrow M2 in FIG. 3), and the DHF nozzle 413, the first DIW nozzle 414, and the IPA nozzle 415 are in the low position LG (see FIG. 4C). ) And above the central portion of the wafer W (see FIG. 9A). Next, the mist guard 80 rises and is positioned at the high position HG (see FIGS. 4A and 5). Next, the wafer W starts to rotate. The rotation of the wafer W continues until a series of processes for the wafer W are accommodated. DHF is supplied from the DHF nozzle 413 to the center of the rotating wafer W. The DHF flows on the surface of the wafer W toward the peripheral edge of the wafer W by centrifugal force, the entire surface of the wafer W is covered with the DHF liquid film, and the surface of the wafer W is processed by DHF.
  • processing liquid in this case, DHF scattered from the wafer W passes between the first and second rotating cups 53 and 54 and flows obliquely downward. Thereafter, the processing liquid is supplied to the liquid passages 525a, 525b, and 525c according to the positions of the first and second movable cup elements 522 and 523, which are predetermined according to the type (acidic, alkaline, organic) of the processing liquid. Flows into one (the one with the inlet open), then flows into one of the liquid reservoirs 522a, 522b, and 522c, and is discarded into the factory waste liquid system through one of the drain lines 523a, 523b, and 523c. . Note that the flow of the processing liquid is common in all processes in which the processing liquid is supplied to the surface of the wafer W, and therefore redundant description in the subsequent processes is omitted.
  • a part of the processing liquid scattered from the wafer W tries to go over the overhanging portion 512 of the exhaust cup 51 toward the side wall 20 a of the chamber 20.
  • Most of the droplets of such treatment liquid collide with the inner surface of the mist guard 80 at a high position and are captured. For this reason, adhesion of a droplet of the processing liquid to the side wall 20a of the chamber 20 is prevented or suppressed to a minimum.
  • the liquid captured by the mist guard 80 either adheres to the inner surface of the mist guard 80 or flows downward on the inner surface of the mist guard 80 by gravity.
  • the FFU 21 enters the internal space of the chamber 20, that is, the processing space. Clean air is blowing downwards. This flow of clean air is rectified by the rectifying plate 22 and travels toward the wafer W.
  • the inside of the exhaust passage 551 is exhausted through the exhaust duct 553, whereby the tip of the overhanging portion 512 of the exhaust cup 51 and the drain cup 52 are exhausted.
  • the atmosphere in the space above the wafer W in the vicinity of the wafer W is sucked from the gap between the tip of the overhanging portion 521b (see the solid line arrow in FIG. 5).
  • the exhaust flow rate through the exhaust duct 553 is kept constant until the wafer W is loaded into the chamber 20 and then unloaded. Accordingly, the clean air supplied from the FFU 21 is supplied to the space above the wafer W, while the atmosphere in the space above the wafer W is drawn into the exhaust passage 551. Thereby, the atmosphere in the space above the wafer W in the vicinity of the wafer W is maintained clean.
  • the liquid passages 525a, 525b, and 525c are not exhausted (suctioned). That is, the gas that flows into the cup 50 from the space above the wafer W near the wafer W does not flow into the liquid passages 525a, 525b, and 525c, but flows into the exhaust passage 551.
  • the liquid passages 525a, 525b, and 525c cannot have the same cross-sectional shape, and the flow passage resistances of the liquid passages 525a, 525b, and 525c are different from each other.
  • a droplet that flows downward due to gravity on the inner surface of the mist guard 80 falls into the guard pocket 90, flows through the discharge pipe 94 and the exhaust pipe 100, and is discharged from the drain 103 of the mist trap 101 to a factory waste liquid system (not shown).
  • DIW rinse process (first time)
  • the discharge of DIW from the first DIW nozzle 414 is started while the mist guard 80 is maintained at the high position HG, and immediately after that, the discharge of DHF from the DHF nozzle 413 is stopped.
  • DIW DIW rinse process
  • DIW that has not been misted is discharged from the AS nozzle 412.
  • the discharge of DIW from the first DIW nozzle 414 is stopped.
  • the mist guard 80 is raised and positioned at the high position HG.
  • the second nozzle arm 422 is positioned at the low position LN (see FIG. 4A).
  • the surface of the wafer W is overlapped.
  • the liquid film of DIW partially disappears, so that a part of the surface of the wafer W can be prevented from being exposed to the air atmosphere (causing the generation of water marks and particles).
  • the DIW discharge start timing from the AS nozzle 412 and the DIW discharge stop timing from the first DIW nozzle 414 are arbitrary.
  • the mist guard 80 when the mist guard 80 is located at the intermediate position MG, the droplet scattering blocking function of the mist guard 80 is lower than when it is located at the high position HG. For this reason, in order to reduce the amount of droplets scattered from the wafer W, the height of the droplets, etc., the rotational speed of the wafer W is decreased and / or the discharge flow rate of DIW from the AS nozzle 412 and the first DIW nozzle 414 is reduced. Decrease (in the range where the surface exposure of the wafer W does not occur), and shorten the time during which the AS nozzle 412 and the first DIW nozzle 414 simultaneously discharge DIW as much as possible (the liquid discharged from different nozzles is the wafer). It is preferable to take measures such as splashing easily upon collision on W).
  • DIW rinse process (second time)
  • the discharge of DIW from the AS nozzle 412 is started while the mist guard 80 is maintained at the high position HG, and immediately after that, the discharge of SC1 from the SC1 nozzle 411 is stopped.
  • the SC1 and the reaction product remaining on the wafer W are washed away.
  • the nozzle arm is replaced. While continuing to discharge DIW from the AS nozzle 412 (the discharge flow rate may be reduced in a range where the DIW liquid film breakage on the surface of the wafer W may not occur), the mist guard 80 is lowered and positioned at the intermediate position MG. Further, the nozzle arms 421 and 422 are raised and positioned at the high position HN (see FIG. 4B). Next, the second nozzle arm 422 is swung so that the first DIW nozzle 414 is positioned directly above the center of the wafer W.
  • the discharge of IPA from the IPA nozzle 415 is started, and immediately after that, the discharge of DIW from the first DIW nozzle 414 is stopped.
  • the mist guard 80 is lowered and positioned at the low position LG.
  • the supplied IPA replaces DIW on the surface of the wafer W, and the surface of the wafer W is covered with a liquid film of IPA.
  • the third nozzle arm 423 is turned to position the first nitrogen gas nozzle 416 directly above the center of the wafer W.
  • the second nozzle arm 422 is directed toward the home position (toward the peripheral edge of the wafer W while continuing to discharge IPA from the IPA nozzle 415).
  • Start moving When the first nitrogen gas nozzle 416 is positioned immediately above the center of the wafer W, discharge of nitrogen gas from the first nitrogen gas nozzle 416 is started.
  • the discharge of the nitrogen gas from the second nitrogen gas nozzle 417 is started, and the third nozzle arm 423 is moved toward the home position (toward the peripheral edge of the wafer W) (see FIG. 9F). .
  • the collision position of the IPA discharged from the IPA nozzle 415 on the surface of the wafer W is maintained radially outside the collision position of the nitrogen gas discharged from the second nitrogen gas nozzle 417 on the surface of the wafer W.
  • the turning motion of the first nozzle arm 421 and the third nozzle arm 423 is controlled.
  • the nitrogen gas discharged from the second nitrogen gas nozzle 417 pushes the IPA liquid film in the wafer peripheral direction, and the circular dry region formed on the surface of the wafer W gradually spreads from the central portion toward the peripheral portion. go.
  • the entire surface of the wafer W is dried when the second nitrogen gas nozzle 417 passes the periphery of the wafer W.
  • the drying process is completed.
  • the nozzle arms 421 and 423 return to their home positions and wait there.
  • the mist guard 80 is located at the low position LG. Therefore, the gas flow from the space above the wafer W toward the slit-shaped opening 97 is not hindered by the mist guard 80. This prevents or reduces the mist or vapor of DIW scattered in the previous process in the space above the wafer W. For this reason, the space above the wafer W can be maintained at a low humidity, and the drying efficiency can be improved. Even if IPA scatters and adheres to the side wall 20a of the chamber 20, the highly volatile IPA evaporates in a short time and is exhausted to the outside of the chamber 20, so that the atmosphere inside the chamber 20 is adversely affected. Absent.
  • the cleaning process is performed on the mist guard 80 located at the low position LG according to the procedure described above with reference to FIG.
  • the chemical component adhering to (the wafer W side surface) is removed.
  • the processed wafer W is carried out of the chamber 20 by the reverse procedure of loading.
  • the SC2 liquid is supplied from the SC2 nozzle 418 to the center of the wafer W with the mist guard 80 at the high position HG.
  • the operation sequence may include a step of performing a rinse process by supplying DIW from the second DIW nozzle 419 to the central portion of the wafer W after the cleaning.
  • the mist guard 80 that can be moved up and down, the chemical component or moisture that is scattered by the raised mist guard 80 is shielded, so that the chemical component or moisture can be contained in the inner wall surface of the chamber 20 or the chamber. It can prevent efficiently adhering to an internal apparatus. Moreover, since the mist guard 80 has the overhang
  • the lower end portion of the outer peripheral cylindrical portion 81 of the mist guard 80 at the high position HG is outside the guard pocket 90, but it may be inside.
  • a ventilation opening 87 can be provided at the lower end portion of the outer peripheral cylindrical portion 81.
  • a plurality of ventilation openings 87 extending along the circumferential direction of the mist guard 80 are provided at intervals in the circumferential direction of the mist guard 80.
  • the exhaust cup 51 is the outermost stationary cup-shaped component constituting the cup 50, but is not limited to this.
  • the exhaust cup 51 may be removed from the cup 50, and the drain cup 52 may be an outermost stationary cup-shaped component constituting the cup 50.
  • a mist guard 80 is provided adjacent to the outside of the drainage cup 52.
  • the positional relationship between the drain cup 52 and the mist guard 80 in this case can be understood by considering the exhaust cup 51 as the drain cup (52) in FIG.
  • the pipes constituting the drain lines 523a, 523b, and 523c are connected to a factory exhaust system (or a suction device such as a suction pump or an ejector) to serve as an exhaust line.
  • a gas-liquid separation device such as a mist trap is provided in the exhaust line, and the liquid separated by the mist trap is discarded, for example, into a factory waste liquid system.
  • FIG. 11 another embodiment of the cleaning process for the mist guard 80 will be described.
  • the same members as those already described with reference to FIGS. 1 to 10 are denoted by the same reference numerals, and redundant description is omitted.
  • the mist guard 80A shown in FIG. 11 is different from the mist guard 80 shown in FIG. 8 in that a ring-shaped (annular) gap forming portion 823 (portion protruding downward) is provided on the lower surface of the overhang portion 82. Is different.
  • the gap forming portion 823 extends radially inward from the inner peripheral surface of the outer peripheral cylindrical portion 81 of the mist guard 80A.
  • a gap G1 between the lower surface of the gap forming portion 823 and the upper surface of the overhanging portion 512 of the exhaust cup 51 opposite thereto is provided as the gap forming portion 823 of the mist guard 80A. It is narrower than the gap G2 between the non-exposed portion (inward in the radial direction from the gap G1) and the upper surface of the overhanging portion 512 of the exhaust cup 51 facing this.
  • the size of the gap G1 is preferably set to a value that is large enough to allow the cleaning liquid to be described later to spread over the entire area of the gap G1, but small enough that the cleaning liquid does not easily flow out of the gap G1, for example, 0 .About 1 to 0.5 mm.
  • the gap forming portion 823 continuously extends in the circumferential direction over the entire circumference of the overhang portion 82 of the mist guard 80A.
  • a plurality of radial grooves 824 for guiding the cleaning liquid supplied from the cleaning liquid nozzle 110 to the gap G2 are formed on the lower surface of the gap forming portion 823.
  • the gap between the groove bottom surface (the upper surface of the groove) of the radial groove 824 and the upper surface of the overhanging portion 512 of the exhaust cup 51 facing the groove is wider than the gap G1.
  • the radial groove 824 extends inward in the radial direction and communicates with the gap G2.
  • the same number of radial grooves 824 as the cleaning liquid nozzles 110 are provided.
  • the cleaning liquid nozzle 110 is provided in the overhanging portion 512 at a position facing the radial groove 824 and supplies the cleaning liquid toward the radial groove 824.
  • the radial groove 824 does not have to extend strictly in the radial direction, and may extend at an angle with respect to the radial direction.
  • a circumferential groove (circumferential groove) 825 extending in the circumferential direction over the entire circumference of the mist guard 80A is formed on the lower surface of the ring-shaped gap forming portion 823.
  • the circumferential groove 825 intersects all the radial grooves 824 and communicates with all the radial grooves 824.
  • the circumferential position of the circumferential groove 825 is radially inward of the cleaning liquid nozzle 110.
  • the mist guard 80A is positioned at the above-described low position LG as shown in FIG. 11, and DIW as the cleaning liquid is discharged from the cleaning liquid nozzle 110.
  • the cleaning liquid discharged from each cleaning liquid nozzle 110 flows into the gap G ⁇ b> 2 through the corresponding radial groove 824.
  • the flow rate of the cleaning liquid discharged from the cleaning liquid nozzle 110 is larger than the flow rate of the cleaning liquid flowing out into the guard pocket 90 through the gap G1.
  • the gap G2 can be filled with the cleaning liquid over the entire circumference.
  • the cleaning liquid is in contact with the lower surface of the projection 83 and the overhang portion 512.
  • the lower surface of the protrusion 83 may not be in contact with the upper surface of the overhanging portion 512.
  • the flow rate of the cleaning liquid discharged from the cleaning liquid nozzle 110 is the flow rate of the cleaning liquid flowing out into the guard pocket 90 through the gap G1 and the cleaning liquid flowing out from the gap between the protrusion 83 and the upper surface of the overhanging portion 512. What is necessary is just to increase more than the sum total of flow volume.
  • the cleaning liquid flowing in the radial groove 824 flows into the circumferential groove 825 and spreads in the circumferential direction.
  • the cleaning liquid diffuses into the narrow gap G1.
  • the entire space (that is, the gap G1 + G2) between the lower surface of the overhanging portion 82 of the mist guard 80A and the upper surface of the overhanging portion 512 of the exhaust cup 51 is filled with the cleaning liquid.
  • the cleaning liquid dissolves adhering substances such as a chemical solution and a reaction product adhering to the lower surface of the overhang portion 82 and the upper surface of the overhang portion 512. Deposits dissolved in the cleaning liquid are discharged into the guard pocket 90 together with the cleaning liquid. In this manner, the surface of the mist guard 80A (the surface on the wafer W side) can be cleaned.
  • the cleaning liquid in the space between the lower surface of the overhanging portion 82 of the mist guard 80A and the upper surface of the overhanging portion 512 of the exhaust cup 51 is removed from the overhanging portion 512 that is an inclined surface. It flows into the guard pocket 90 along the upper surface. This completes the cleaning.
  • the above washing operation may be repeated.
  • the space between the lower surface of the overhanging portion 82 of the mist guard 80A and the upper surface of the overhanging portion 512 of the exhaust cup 51 can be filled with the cleaning liquid evenly.
  • the entire surface of the surface to be cleaned on the lower surface of the overhang portion 82 and the upper surface of the overhang portion 512 can be cleaned without unevenness.
  • the gap forming portion 823 is formed with the radial groove 824, but the radial groove 824 may not be provided.
  • the cleaning liquid nozzle 110B is provided in the projecting portion 512 of the exhaust cup 51 at a position radially inward of the gap forming portion 823B of the mist guard 80B.
  • the gap G2 can be filled with the cleaning liquid over the entire circumference by the cleaning liquid supplied from the cleaning liquid nozzle 110B.
  • the gap G1 between the lower surface of the gap forming portion 823 and the upper surface of the overhanging portion 512 can be filled with the cleaning liquid over the entire circumference. Deposits dissolved in the cleaning liquid are discharged into the guard pocket 90B together with the cleaning liquid. In this manner, the surface of the mist guard 80B (the surface on the wafer W side) can be cleaned.
  • a cover 60 is provided around the SC2 nozzle 418 shown in FIG.
  • the cover 60 is fixed to the floor board 96.
  • An opening 62 is formed in the front surface 61 of the cover 60 facing the mist guard 80A.
  • the SC2 liquid processing liquid
  • a shielding member 88 is provided on the outermost cylindrical portion of the mist guard 80A, that is, on the outermost peripheral portion of the upper surface of the overhang portion 82.
  • the shielding member 88 may be a member that cannot be integrated with the mist guard 80A, or may be a member that is manufactured separately from the mist guard 80A and then fixed to the mist guard 80A.
  • the shielding member 88 opens a narrow gap (for example, about 1 to 2 mm) from the portion of the front surface 61 of the cover 60 where the opening 62 is not formed. Facing each other.
  • the cover 60 and the shielding member 88 may be integrated. In this case, the cover 60 and the shielding member 88 move up and down in conjunction with the mist guard 80A. In this case, the gap 63 provided to prevent interference between the cover 60 and the shielding member 88 when the mist guard 80A is raised and lowered is not necessary. For this reason, it can prevent more reliably that the vapor
  • SC2 liquid processing liquid
  • ⁇ 64 (liquid guide member) is provided below the discharge port of the SC2 nozzle 418.
  • the SC2 liquid dripping from the discharge port of the SC2 nozzle 418 flows into the guard pocket 90 through the ridge 64. For this reason, it is possible to prevent the floor plate 96 from being contaminated by the SC2 liquid dripping from the SC2 nozzle 418 or the SC2 dripping from the floor plate 96 from being evaporated and diffused into the chamber 20.
  • the substrate to be processed is a semiconductor wafer, but is not limited to this, and may be another substrate, for example, a glass substrate for a liquid crystal display, a ceramic substrate, or the like.

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)

Abstract

L'invention concerne un dispositif de traitement de substrat comprenant : un corps de coupelle (51) fixe, qui entoure une partie maintien (31) de substrat et est relativement immobile par rapport à un récipient de traitement destiné à recevoir un liquide de traitement ou une nébulisation du liquide de traitement ayant été fourni à un substrat ; un élément de protection (80) antinébulisation ; et un mécanisme de levage (84) de protection pour lever et abaisser l'élément de protection antinébulisation. L'élément de protection antinébulisation est prévu sur le côté extérieur du corps de coupelle fixe de manière à entourer celui-ci, et bloque les éclaboussures du liquide par-dessus le corps de coupelle fixe et à l'extérieur de celui-ci. L'élément de protection antinébulisation comporte une partie tube (81) tubulaire et une partie en porte-à-faux (82), qui dépasse de l'extrémité supérieure de la partie tube vers le côté du corps de coupelle fixe.
PCT/JP2016/072157 2015-07-29 2016-07-28 Système de traitement de substrat, procédé de traitement de substrat et support d'informations Ceased WO2017018481A1 (fr)

Priority Applications (3)

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US15/747,921 US11024518B2 (en) 2015-07-29 2016-07-28 Substrate processing apparatus, substrate processing method and recording medium
CN201680044518.2A CN107851572B (zh) 2015-07-29 2016-07-28 基板处理装置、基板处理方法以及存储介质
KR1020187002473A KR102566736B1 (ko) 2015-07-29 2016-07-28 기판 처리 장치, 기판 처리 방법 및 기억 매체

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JP2015149916 2015-07-29
JP2016-122690 2016-06-21
JP2016122690A JP6740028B2 (ja) 2015-07-29 2016-06-21 基板処理装置、基板処理方法および記憶媒体

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CN111446150A (zh) * 2019-01-17 2020-07-24 东京毅力科创株式会社 基板处理方法和基板处理装置
CN111755358A (zh) * 2019-03-28 2020-10-09 东京毅力科创株式会社 基板处理装置和基板处理方法
JP2022045904A (ja) * 2020-09-09 2022-03-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN114843206A (zh) * 2021-02-02 2022-08-02 东京毅力科创株式会社 基板处理装置、基板处理方法以及存储介质

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CN112768378B (zh) * 2020-12-31 2023-02-10 上海至纯洁净系统科技股份有限公司 一种交错式晶圆表面湿法清洗系统及清洗方法
CN114373700B (zh) * 2021-12-31 2024-12-31 至微半导体(上海)有限公司 一种控制清洗液滴溢流与气氛调节的装置
JP7572998B2 (ja) * 2022-08-26 2024-10-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

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