WO2017116116A1 - Dispositif de détection comprenant une partie de réception de lumière à structure concave-convexe et une partie de condensation de lumière - Google Patents

Dispositif de détection comprenant une partie de réception de lumière à structure concave-convexe et une partie de condensation de lumière Download PDF

Info

Publication number
WO2017116116A1
WO2017116116A1 PCT/KR2016/015331 KR2016015331W WO2017116116A1 WO 2017116116 A1 WO2017116116 A1 WO 2017116116A1 KR 2016015331 W KR2016015331 W KR 2016015331W WO 2017116116 A1 WO2017116116 A1 WO 2017116116A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
substrate
cover substrate
light receiving
sensing device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2016/015331
Other languages
English (en)
Korean (ko)
Inventor
이동근
박재완
이정기
최주승
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020150191331A external-priority patent/KR102527098B1/ko
Priority claimed from KR1020150191328A external-priority patent/KR102375812B1/ko
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Priority to CN201690001263.7U priority Critical patent/CN208189615U/zh
Publication of WO2017116116A1 publication Critical patent/WO2017116116A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a sensing device for identifying a state of an object using an optical signal, and more particularly, to a sensing device having a light emitting unit and a light receiving unit between a substrate and a cover substrate, wherein the optical signal irradiated from the light emitting unit
  • the light receiving unit is formed on the cover substrate so that the light receiving unit can be more effectively detected by the light receiving unit, and the light receiving unit forms a concave-convex structure so that the optical signal can be detected more effectively.
  • It relates to a sensing device characterized by improving the sensitivity by including a light collecting portion for more effectively irradiating the object.
  • Photodiodes are characterized by fast response speeds, wide sensitivity wavelengths, and good linearity of photocurrent. Therefore, researches for using them widely in electronic devices have been continuously conducted.
  • the present invention is to solve the problem of excessive cross talk and excessive power consumption due to the conventional photodiode or light emitting diode being positioned on a substrate. It is an object of the present invention to provide a sensing device which directly reduces the crosstalk by reducing the sensing distance by directly forming the sensor and improves the signal-to-noise ratio.
  • an object of the present invention is to form a light-receiving portion to form a concave-convex structure in order to further increase the light sensitivity of the light-receiving portion to maximize the area for detecting light, that is, the light-receiving area to be able to detect the received light more efficiently.
  • an object of the present invention is to further include a light collecting unit for collecting the light output by the light emitting unit to irradiate the object on the cover substrate to enable intensive irradiation of light on the object.
  • the sensing device comprises a substrate; A cover substrate formed on the substrate; A light emitting unit provided in a space between the substrate and the cover substrate to irradiate light onto an object present on an upper surface of the cover substrate; A light receiving unit formed on the cover substrate and receiving an optical signal reflected by an object; Including, but the light receiving portion may be characterized in that it comprises a concave-convex structure.
  • the light receiving unit may be formed in close contact with the cover substrate in a thin film form.
  • an area of the cover substrate in contact with the light receiving unit may include an uneven structure corresponding to the uneven structure of the light receiving unit.
  • the height of the floor or valley of the concave-convex structure in the sensing device may be characterized in that 5um to 50um, and further, the floor or valley of the concave-convex structure may be formed at intervals of 5um to 50um.
  • the sensing device may further include a partition wall disposed between the substrate and the cover substrate to form a space in which the light emitting part may be disposed.
  • one surface of the light receiving unit may be in contact with an upper surface of the partition wall, and a rear surface of the light receiving unit may be in contact with a lower surface of the cover substrate.
  • the light receiving unit may be formed in close contact with the cover substrate using at least one of vacuum deposition, sputtering, CVD, and printing.
  • the light emitting unit may include at least one of a light emitting diode (LED), an organic light emitting diode (OLED), an infrared emitting diode (Infrared Emitting Diode), and a laser diode (Laser Diode).
  • LED light emitting diode
  • OLED organic light emitting diode
  • LED infrared emitting diode
  • Laser Diode laser diode
  • the light receiving unit may include at least one of a photodiode, a photoelectron multiplier, and a phototransistor.
  • the heart rate sensor is a substrate; A cover substrate formed on the substrate; A light emitting unit provided in a space between the substrate and the cover substrate to irradiate light onto an object present on an upper surface of the cover substrate; A light receiving unit formed on the cover substrate and receiving an optical signal reflected by an object; Including, but the light receiving portion may be characterized in that it comprises a concave-convex structure.
  • the sensing device is a substrate; A cover substrate formed on the substrate; A light emitting unit to emit light as provided in a space between the substrate and the cover substrate; A light receiving unit formed on the cover substrate and receiving an optical signal reflected by an object; And a light collecting part formed on the cover substrate and collecting light emitted by the light emitting part to irradiate an object on an upper surface of the cover substrate.
  • the light collecting unit may be implemented as a micro lens.
  • the height of the micro lens may be 10um to 80um
  • the diameter of the micro lens may be characterized in that 10um to 80um.
  • the light receiving unit may include an uneven structure.
  • the light receiving unit of the sensing device may be formed in close contact with the cover substrate in the form of a thin film.
  • the area of the cover substrate in contact with the light receiving portion may include a concave-convex structure corresponding to the concave-convex structure of the light-receiving portion, the height of the floor or valley of the concave-convex structure can be implemented to be 5um to 50um, furthermore the concave-convex structure
  • the floor or valley of may be implemented to be formed at 5um to 50um intervals.
  • the sensing device may further include a partition wall disposed between the substrate and the cover substrate to form a space in which the light emitting part may be disposed.
  • one surface of the light receiving unit is in contact with an upper surface of the partition wall
  • the back surface of the light receiving portion may be in contact with the bottom surface of the cover substrate.
  • the light receiving unit may be formed in close contact with the cover substrate using at least one of vacuum deposition, sputtering, CVD, and printing.
  • the light emitting unit may include at least one of a light emitting diode (LED), an organic light emitting diode (OLED), an infrared emitting diode (Infrared Emitting Diode), and a laser diode.
  • LED light emitting diode
  • OLED organic light emitting diode
  • LED infrared emitting diode
  • laser diode a laser diode
  • the light receiving unit may include at least one of a photodiode, a photoelectron multiplier, and a phototransistor.
  • the heart rate sensor is a substrate; A cover substrate formed on the substrate; A light emitting unit to emit light as provided in a space between the substrate and the cover substrate; A light receiving unit formed on the cover substrate and receiving an optical signal reflected by an object; And a light collecting part formed on the cover substrate and collecting light emitted by the light emitting part to irradiate an object on an upper surface of the cover substrate.
  • the light receiving part may further include an uneven structure.
  • the conventional photodiode or light emitting diode is located on the substrate, there is a problem of generating a lot of crosstalk, and a problem of consuming excessive power, but the sensing device according to the present invention forms a light receiving unit directly on the cover substrate to shorten the sensing distance. As a result, there is an effect of improving the intensity of the light emitting portion and the sensitivity of the light receiving portion.
  • the sensing device has an effect of effectively receiving light by maximizing the area of the light receiving area by forming the light receiving part in the uneven structure.
  • the sensing device can collect the light output by the light emitting unit through a light collecting unit to irradiate the object to minimize the light consumed by diffuse reflection.
  • the sensing device can increase the sensing signal with the same driving voltage as the conventional sensor, so that it is possible to implement the same performance as the existing with only a low driving voltage, thereby implementing an efficient sensing device.
  • the sensing device may be applied to a heart rate sensor (PPG sensor; photo-plethysmography sensor) for measuring the heart rate by sensing the light reflected by the blood vessels of the finger / palm / body on the cover substrate.
  • PPG sensor photo-plethysmography sensor
  • FIG. 1 illustrates a sensing device in which a light emitting part and a light receiving part are formed in a bulk form according to the related art.
  • FIG. 2 illustrates a sensing device according to an embodiment of the present invention.
  • Figure 3 shows a sensing device of another structure according to the shape of the partition wall.
  • FIG 4 is an enlarged view of an overlapping area between a light receiving unit and a cover substrate of an uneven structure.
  • FIG. 5 is an exemplary diagram illustrating a configuration in which a plurality of layers included in a light receiving unit of a sensing device according to an embodiment of the present invention are stacked in parallel with a cover substrate.
  • FIG. 6 is an exemplary view illustrating a configuration in which a plurality of layers included in a light receiving unit of a sensing device according to an embodiment of the present invention are stacked vertically with a cover substrate.
  • FIG. 7 illustrates a sensing device according to an embodiment of the present invention.
  • FIG. 8 illustrates a sensing device of another structure according to the shape of the partition wall.
  • FIG 9 is an enlarged view of a condenser implemented with a micro lens.
  • a part such as a layer or a membrane is said to be “on” or “below” another part, this includes not only the other part “directly above” or “directly below” but also another part in the middle. On the contrary, when a part is “just above” or “just below” another part, it means that there is no other part in the middle.
  • FIG. 1 illustrates a sensing device in which a conventional light emitting part and a light receiving part are formed in a bulk form.
  • the conventional sensing device is implemented by mounting a cover substrate after mounting a light emitting unit and a light receiving unit in a bulk form on a PCB substrate.
  • a space is generated between the PCB substrate and the cover substrate during the manufacturing process of the sensing device, as shown in FIG. 1, the distance between the light emitting unit 130 or the light receiving unit 140 and the cover substrate 120 (Air). gap 142 is present.
  • this spacing leads to an increase in the path from the light emitting unit to the light receiving unit, that is, the sensing distance, thereby reducing the accuracy of the sensing device and at the same time causing a lot of driving power of the sensing device.
  • the light irradiated from the light emitting unit may reach the light receiving unit through various paths.
  • the light reflected on the cover substrate may reach the light receiving unit. do.
  • the light that reaches the light receiver along this path corresponds to a so-called crosstalk noise signal (dotted arrow in FIG. 1), and unlike the light that reaches the light receiver after being reflected by an object, it is not included in the signal. Corresponding.
  • the present invention is to reduce the crosstalk caused by the gap between the substrate and the cover substrate as described above, will be described in detail with reference to FIG.
  • FIG. 2 is a block diagram showing a sensing device according to an embodiment of the present invention.
  • the sensing device may include a substrate 210, a cover substrate 220, a light emitting unit 230, and a light receiving unit 240.
  • the substrate 210 has conventionally mounted a bulk light emitting part and a light receiving part. However, since the light receiving part is formed in close contact with the bottom surface of the cover substrate, other semiconductor parts except the light receiving part may be mounted on the substrate. There are advantages to it.
  • the light receiving unit may be preferably formed in close contact with the cover substrate, and in particular, may be formed in close contact with the upper or lower surface of the cover substrate.
  • the substrate 210 is a plate on which an electric circuit capable of changing wiring is organized, and may include all of a printed circuit board, an insulation board, and an insulation board made of an insulation material capable of forming a conductor pattern on the surface of the insulation board. .
  • the substrate may be rigid or flexible.
  • the substrate may comprise glass or plastic.
  • the substrate includes chemically strengthened / semi-hardened glass such as soda lime glass or aluminosilicate glass, polyimide (PI), polyethylene terephthalate (PET), propylene glycol (propylene glycol, PPG) Polycarbonate (PC), such as reinforced or soft plastics or may contain sapphire.
  • chemically strengthened / semi-hardened glass such as soda lime glass or aluminosilicate glass, polyimide (PI), polyethylene terephthalate (PET), propylene glycol (propylene glycol, PPG) Polycarbonate (PC), such as reinforced or soft plastics or may contain sapphire.
  • the substrate may include a photoisotropic film.
  • the substrate 210 may include a cyclic olefin copolymer (COC), a cyclic olefin polymer (COP), an isotropic polycarbonate (PC), or an isotropic polymethyl methacrylate (PMMA).
  • COC cyclic olefin copolymer
  • COP cyclic olefin polymer
  • PC isotropic polycarbonate
  • PMMA isotropic polymethyl methacrylate
  • Sapphire is a material that can be used as a cover substrate because of its excellent electrical properties such as permittivity, which can dramatically increase the touch response speed, and can easily implement spatial touch such as hovering and high surface strength.
  • hovering refers to a technique of recognizing coordinates even at a distance far from the display.
  • the substrate 210 may be bent while having a partially curved surface. That is, the substrate may be curved while partially having a plane and partially having a curved surface. In detail, an end of the substrate 210 may have a curved surface, or may have a curved surface or a surface including a random curvature.
  • the substrate may be a flexible substrate having flexible characteristics.
  • the substrate may be a curved or bent substrate. That is, the touch window including the substrate may also be formed to have a flexible, curved or bent characteristic. Therefore, the touch window according to the embodiment is easy to carry and can be changed in various designs.
  • the substrate of the present invention may be made of a printed circuit board (PCB) or ceramic substrate.
  • PCB printed circuit board
  • the PCB substrate represents the electrical wiring connecting the circuit components based on the circuit design in a wiring diagram, and can reproduce the electrical conductor on the insulator.
  • the cover substrate 220 is formed on the substrate and may receive various input signals such as a user's touch signal or a heartbeat signal.
  • the cover substrate 220 may be formed directly on the substrate 210, but may be supported and fixed by a separate partition wall 250 formed on the substrate 210.
  • the partition wall 250 is essentially for blocking the light irradiated by the light emitting unit 230 to reach the light receiving unit 240 directly, but as another use, the partition wall 250 is the substrate and the cover
  • the light emitting unit or the light receiving unit may be disposed between the substrates to form a space.
  • FIG. 2 and 3 show the appearance of the sensing device distinguished according to the shape of the partition wall.
  • 2 illustrates a partition wall formed on the substrate 210 at a predetermined interval, and the light receiving unit 240 is closely contacted between the partition wall 250 and the cover substrate 220.
  • FIG. 3 shows that partition walls are formed at a predetermined interval on the substrate 210, and the light receiving unit 240 is formed to contact only the cover substrate 220 without being in contact with the partition wall 250.
  • the partition wall 250 essentially serves to prevent the light emitted from the light emitter 230 from directly entering the light receiver 240 and to support the substrate 210 and the cover substrate 220.
  • a dummy 270 may be further formed between the partition wall 250 and the cover substrate 220.
  • the light emitting unit 230 basically serves to irradiate light in all directions, the light is reflected by the object present on the cover substrate.
  • the light emitting unit may include at least one of a light emitting diode (LED), an organic light emitting diode (OLED), an infrared emitting diode (Infrared Emitting Diode), and a laser diode.
  • the light emitter 230 receives power from an electronic device included in the sensing device, emits the received energy as light having a specific wavelength, and further, the light emitter 230 uses the wavelength of the optical signal to be irradiated as necessary.
  • Various materials can be used to change.
  • the light receiver 240 When the light signal emitted from the light emitter 230 is absorbed or reflected by the object on the cover substrate 220, the light receiver 240 receives the absorbed or reflected light signal and generates a photocurrent signal.
  • the light receiving unit 240 is implemented with at least one of a photodiode, a photoelectron multiplier, and a phototransistor.
  • the light receiving unit 240 is preferably made of a photodiode.
  • the photodiode is composed of a PN or PIN structure. When light of sufficient energy strikes the diode, the electrons and the positive electrons are generated by moving electrons and positive charge holes.
  • the PN structure is composed of a p-n junction, and when exposed to electron radiation at an appropriate frequency, an excess charge carrier is generated as a result of photoconductivity, and the carrier generates a photocurrent by crossing the p-n junction.
  • the PIN structure is a structure in which a layer of intrinsic (i-type) semiconductor is bonded between the p region and the n region, and an element having an optimum frequency response characteristic can be manufactured by adjusting the thickness of the i region.
  • the light receiving unit 240 of the present invention is characterized in that it is formed in close contact on the cover substrate. At this time, the light receiving unit 240 may be formed in close contact with the cover substrate in the form of a thin film. As an embodiment in which the light receiving unit 240 is formed on the bottom surface of the cover substrate 220, the light receiving unit 240 may be formed on the bottom surface of the cover substrate 220 by sintering a paste-like material by a firing process. have.
  • the light receiving unit may be formed in close contact with the cover substrate by using at least one method of vacuum deposition, CVD, printing.
  • CVD chemical vapor deposition
  • the gap between the cover substrate and the substrate can be minimized, and the thickness of the electronic device including the sensor itself is reduced and the weight is light.
  • the sensing distance (see FIG. 2) of an object on the cover substrate is closer to the light receiving unit 240. Sensitivity may be increased.
  • the detection efficiency can be increased by the same driving voltage as the conventional sensing device, the same performance as that of the conventional device can be realized with a low driving voltage.
  • the light receiving unit 240 may have a whole or part of the uneven structure (see A).
  • the uneven structure refers to a structure in which concave and convex structures appear repeatedly, and the light receiving unit 240 may be formed as a concave-convex structure including a plurality of floors and valleys.
  • the area of the light receiving area that is, the light receiving area can be maximized, thereby increasing the sensitivity.
  • the light receiving unit 240 of FIG. 2 has a simple planar structure, it is obvious that the light receiving area of the uneven structure is larger than the light receiving area of the planar structure, and further, on the cover substrate 220.
  • the reflected light can be more efficiently received, such as the likelihood that the incident angle of the light reflected by the object is vertical or close to vertical.
  • FIG 4 illustrates an enlarged view of the concave-convex structure of the light receiving unit 240 and the cover substrate 220 in contact with the concave-convex structure.
  • the light receiving unit 240 may be formed as a concave-convex structure including a floor and a valley.
  • the concave-convex structure may be formed in an entire region or a partial region in which the light receiving unit receives light.
  • cover substrate 220 in contact with the light receiving unit 240 may also be formed in an uneven structure to correspond to the uneven structure of the light receiving unit 240.
  • the uneven structure may be preferably formed so that the height of the floor or valley is 5um to 50um, and may further be formed so that the floor or valley is repeated at intervals of 5um to 50um.
  • the light receiver 240 may be formed on the cover substrate 220 through the following process.
  • a concave-convex structure is formed in a portion of the cover substrate 220.
  • the glass forming method may be utilized.
  • the light receiving unit 240 of the thin film is deposited on the cover substrate 220 on which the uneven structure is formed.
  • various methods such as vacuum deposition, CVD, and printing may be utilized as mentioned above, but preferably, vacuum deposition is used.
  • the deposition process such as etching and patterning, and the deposition again to finally complete the light receiving unit 240 and the cover substrate 220 of the concave-convex structure.
  • the light receiver 240 may include a first electrode 241, a P layer 242, a silicon layer 243, an N layer 244, and a second electrode 245.
  • the first electrode, the P layer, the silicon layer, the N layer, and the second electrode are formed by being stacked in parallel to the lower surface of the cover substrate as shown in FIG. 5, or on the lower surface of the cover substrate as shown in FIG. 6. It can be stacked vertically.
  • At least one sensing electrode of the first electrode 241 and the second electrode 245 may include a transparent conductive material to allow electricity to flow without disturbing the transmission of light.
  • the electrode 241 , 245 is indium tin oxide, indium zinc oxide, copper oxide, copper oxide, tin oxide, zinc oxide, titanium oxide, or the like. It may include a metal oxide of.
  • At least one sensing electrode of the first electrode 241 and the second electrode 245 may include a nanowire, a photosensitive nanowire film, carbon nanotubes (CNT), graphene, or a conductive polymer. Can be.
  • At least one sensing electrode of the first electrode 241 and the second electrode 245 may include various metals.
  • the electrodes 241 and 245 may include chromium (Cr), nickel (Ni), copper (Cu), aluminum (Al), silver (Ag), and molybdenum (Mo).
  • Gold (Au), titanium (Ti) and their alloys may include at least one metal.
  • the sensing electrode materials may be mixed and used.
  • the sensing device may further include a controller, and the controller may receive the photocurrent signal generated by the light receiver 240 and analyze the photocurrent signal according to a preset condition.
  • the controller may perform an appropriate analysis of the photocurrent signal according to the purpose according to the purpose and the method of use of the electronic device including the sensor.
  • the sensor including the light emitter and the light receiver is a heartbeat sensor
  • the light signal irradiated by the light emitter is absorbed / reflected from a finger / wrist / cuff located on the cover substrate
  • the light receiver may receive the absorbed / reflected light signal.
  • the optical current is generated according to the intensity of the received optical signal.
  • the controller may measure the pulse according to the period of intensity of the photocurrent signal.
  • the controller may be implemented in the form of an application specific integrated circuit (ASIC) provided in the substrate 210.
  • ASIC application specific integrated circuit
  • the present invention can be applied to a low power consumption heart rate (PPG) sensor
  • the low power consumption heart rate sensor is a substrate, a cover substrate formed on the substrate, a light emitting unit for irradiating an optical signal to the cover substrate, the light emitting unit is irradiated
  • the optical signal is absorbed or reflected on the object on the cover substrate, and includes a light receiving portion for receiving the absorbed or reflected light signal and generates a photocurrent signal
  • the light emitting portion or the light receiving portion is in close contact with the cover substrate It is characterized by being formed.
  • FIG. 1 illustrates a sensing device in which a conventional light emitting part and a light receiving part are formed in a bulk form.
  • the conventional sensing device is implemented by mounting a cover substrate after mounting a light emitting unit and a light receiving unit in a bulk form on a PCB substrate.
  • a space is generated between the PCB substrate and the cover substrate during the manufacturing process of the sensing device, as shown in FIG. 1, the distance between the light emitting unit 130 or the light receiving unit 140 and the cover substrate 120 (Air). gap 142 is present.
  • this spacing leads to an increase in the path from the light emitting unit to the light receiving unit, that is, the sensing distance, thereby reducing the accuracy of the sensing device and at the same time causing a lot of driving power of the sensing device.
  • the light irradiated from the light emitting unit may reach the light receiving unit through various paths.
  • the light reflected on the cover substrate may reach the light receiving unit. do.
  • the light that reaches the light receiver along this path corresponds to a so-called crosstalk noise signal (dotted arrow in FIG. 1), and unlike the light that reaches the light receiver after being reflected by an object, it is not included in the signal. Corresponding.
  • the present invention is to maximize the power efficiency and at the same time to reduce the cross-talk generated by the gap between the substrate and the cover substrate, will be described in detail with reference to FIG.
  • FIG. 7 is a block diagram showing a sensing device according to an embodiment of the present invention.
  • the sensing device may include a substrate 210, a cover substrate 220, a light emitting unit 230, a light receiving unit 240, a partition 250, and a light collecting unit 260. .
  • the substrate 210 has conventionally mounted a bulk light emitting part and a light receiving part. However, since the light receiving part is formed in close contact with the bottom surface of the cover substrate, other semiconductor parts except the light receiving part may be mounted on the substrate. There are advantages to it.
  • the light receiving unit may be preferably formed in close contact with the cover substrate, and in particular, may be formed in close contact with the upper or lower surface of the cover substrate.
  • the substrate 210 is a plate on which an electric circuit capable of changing wiring is organized, and may include all of a printed circuit board, an insulation board, and an insulation board made of an insulation material capable of forming a conductor pattern on the surface of the insulation board. .
  • the substrate may be rigid or flexible.
  • the substrate may comprise glass or plastic.
  • the substrate includes chemically strengthened / semi-hardened glass such as soda lime glass or aluminosilicate glass, polyimide (PI), polyethylene terephthalate (PET), propylene glycol (propylene glycol, PPG) Polycarbonate (PC), such as reinforced or soft plastics or may contain sapphire.
  • chemically strengthened / semi-hardened glass such as soda lime glass or aluminosilicate glass, polyimide (PI), polyethylene terephthalate (PET), propylene glycol (propylene glycol, PPG) Polycarbonate (PC), such as reinforced or soft plastics or may contain sapphire.
  • the substrate may include a photoisotropic film.
  • the substrate 210 may include a cyclic olefin copolymer (COC), a cyclic olefin polymer (COP), an isotropic polycarbonate (PC), or an isotropic polymethyl methacrylate (PMMA).
  • COC cyclic olefin copolymer
  • COP cyclic olefin polymer
  • PC isotropic polycarbonate
  • PMMA isotropic polymethyl methacrylate
  • Sapphire is a material that can be used as a cover substrate because of its excellent electrical properties such as permittivity, which can dramatically increase the touch response speed, and can easily implement spatial touch such as hovering and high surface strength.
  • hovering refers to a technique of recognizing coordinates even at a distance far from the display.
  • the substrate 210 may be bent while having a partially curved surface. That is, the substrate may be curved while partially having a plane and partially having a curved surface. In detail, an end of the substrate 210 may have a curved surface, or may have a curved surface or a surface including a random curvature.
  • the substrate may be a flexible substrate having flexible characteristics.
  • the substrate may be a curved or bent substrate. That is, the touch window including the substrate may also be formed to have a flexible, curved or bent characteristic. Therefore, the touch window according to the embodiment is easy to carry and can be changed in various designs.
  • the substrate of the present invention may be made of a printed circuit board (PCB) or ceramic substrate.
  • PCB printed circuit board
  • the PCB substrate represents the electrical wiring connecting the circuit components based on the circuit design in a wiring diagram, and can reproduce the electrical conductor on the insulator.
  • the cover substrate 220 is formed on the substrate and may receive various input signals such as a user's touch signal or a heartbeat signal.
  • the cover substrate 220 may be formed directly on the substrate 210, but may be supported and fixed by a separate partition wall 250 formed on the substrate 210.
  • the partition wall 250 is essentially for blocking the light irradiated by the light emitting unit 230 to reach the light receiving unit 240 directly, but as another use, the partition wall 250 is the substrate and the cover
  • the light emitting unit or the light receiving unit may be disposed between the substrates to form a space.
  • FIG. 7 and 8 show the appearance of the sensing device distinguished according to the shape of the partition wall.
  • FIG. 7 illustrates that partition walls are formed at a predetermined interval on the substrate 210, and the light receiving unit 240 is closely contacted between the partition walls 250 and the cover substrate 220.
  • FIG. 8 illustrates that partition walls are formed at a predetermined interval on the substrate 210, and the light receiving unit 240 is formed to contact only the cover substrate 220 without being in contact with the partition wall 250.
  • the partition wall 250 essentially serves to prevent the light emitted from the light emitter 230 from directly entering the light receiver 240 and to support the substrate 210 and the cover substrate 220.
  • a dummy 270 may be further formed between the partition wall 250 and the cover substrate 220.
  • the light emitting unit 230 basically serves to irradiate light in all directions, the light is reflected by the object present on the cover substrate.
  • the light emitting unit may include at least one of a light emitting diode (LED), an organic light emitting diode (OLED), an infrared emitting diode (Infrared Emitting Diode), and a laser diode.
  • the light emitter 230 receives power from an electronic device included in the sensing device, emits the received energy as light having a specific wavelength, and further, the light emitter 230 uses the wavelength of the optical signal to be irradiated as necessary.
  • Various materials can be used to change.
  • the sensing device may further include a light collecting unit 260 for collecting the light output by the light emitting unit 230 to irradiate the object present on the cover substrate.
  • FIG. 9 is an enlarged view of the light collecting part 260 shown in FIG. 7 or 8.
  • the light collecting part 260 may be formed on one surface of the cover substrate 220.
  • the light collecting part 260 may be formed on the bottom surface of the cover substrate 220 facing the light emitting part 230 as shown in FIG. 7 or 8. Can be.
  • the light collecting part 260 needs to be implemented as a structure capable of collecting light output and irradiated by the light emitting part 230.
  • the miner 260 may be implemented.
  • the microlens may be formed to a height of about 10um to 80um, and the diameter of the microlens may be formed to be about 10um to 80um.
  • the light concentrator 260 basically serves to concentrate and irradiate the light output by the light emitter 230 in one place, and at the same time also serves to concentrate the light diffused by the partition wall. do.
  • a space of a predetermined volume exists between the light emitting unit 230 and the cover substrate 220 by the partition, and the light output by the light emitting unit 230 is generated by the partition and the space.
  • the light receiver 240 receives the absorbed or reflected light signal and generates a photocurrent signal.
  • the light receiving unit 240 is implemented with at least one of a photodiode, a photoelectron multiplier, and a phototransistor.
  • the light receiving unit 240 is preferably made of a photodiode.
  • the photodiode is composed of a PN or PIN structure. When light of sufficient energy strikes the diode, the electrons and the positive electrons are generated by moving electrons and positive charge holes.
  • the PN structure is composed of a p-n junction, and when exposed to electron radiation at an appropriate frequency, an excess charge carrier is generated as a result of photoconductivity, and the carrier generates a photocurrent by crossing the p-n junction.
  • the PIN structure is a structure in which a layer of intrinsic (i-type) semiconductor is bonded between the p region and the n region, and an element having an optimum frequency response characteristic can be manufactured by adjusting the thickness of the i region.
  • the light receiving unit 240 of the present invention is characterized in that it is formed in close contact on the cover substrate. At this time, the light receiving unit 240 may be formed in close contact with the cover substrate in the form of a thin film. As an embodiment in which the light receiving unit 240 is formed on the bottom surface of the cover substrate 220, the light receiving unit 240 may be formed on the bottom surface of the cover substrate 220 by sintering a paste-like material by a firing process. have.
  • the light receiving unit may be formed in close contact with the cover substrate by using at least one method of vacuum deposition, CVD, printing.
  • CVD chemical vapor deposition
  • the gap between the cover substrate and the substrate can be minimized, and the thickness of the electronic device including the sensor itself is reduced and the weight is light.
  • the light receiving unit 240 When the light receiving unit 240 is formed in close contact with the lower surface of the cover substrate 220, unlike the conventional sensor (see FIG. 1), since the sensing distance (see FIG. 7) with the object on the cover substrate is closer, the light receiving unit 240 Sensitivity may be increased. In addition, since the detection efficiency can be increased by the same driving voltage as the conventional sensing device, the same performance as that of the conventional device can be realized with a low driving voltage.
  • the light receiving unit 240 may be a whole or a portion of the concave-convex structure (A).
  • the uneven structure refers to a structure in which concave and convex structures appear repeatedly, and the light receiving unit 240 may be formed as a concave-convex structure including a plurality of floors and valleys.
  • the area of the light receiving area that is, the light receiving area can be maximized, thereby increasing the sensitivity.
  • the light receiving unit 240 of FIG. 7 has a simple planar structure, it is obvious that the light receiving area of the uneven structure is larger than the light receiving area of the planar structure, and further, on the cover substrate 220.
  • the reflected light can be more efficiently received, such as the likelihood that the incident angle of the light reflected by the object is vertical or close to vertical.
  • FIG 4 illustrates an enlarged view of the concave-convex structure of the light receiving unit 240 and the cover substrate 220 in contact with the concave-convex structure.
  • the light receiving unit 240 may be formed as a concave-convex structure including a floor and a valley.
  • the concave-convex structure may be formed in an entire region or a partial region in which the light receiving unit receives light.
  • cover substrate 220 in contact with the light receiving unit 240 may also be formed in an uneven structure to correspond to the uneven structure of the light receiving unit 240.
  • the uneven structure may be preferably formed so that the height of the floor or valley is 5um to 50um, and may further be formed so that the floor or valley is repeated at intervals of 5um to 50um.
  • the light receiver 240 may be formed on the cover substrate 220 through the following process.
  • a concave-convex structure is formed in a portion of the cover substrate 220.
  • the glass forming method may be utilized.
  • the light receiving unit 240 of the thin film is deposited on the cover substrate 220 on which the uneven structure is formed.
  • various methods such as vacuum deposition, CVD, and printing may be utilized as mentioned above, but preferably, vacuum deposition is used.
  • the deposition process such as etching and patterning, and the deposition again to finally complete the light receiving unit 240 and the cover substrate 220 of the concave-convex structure.
  • the light receiver 240 may include a first electrode 241, a P layer 242, a silicon layer 243, an N layer 244, and a second electrode 245.
  • the first electrode, the P layer, the silicon layer, the N layer, and the second electrode are formed by being stacked in parallel with the lower surface of the cover substrate as shown in FIG. 5, or on the lower surface of the cover substrate as shown in FIG. 6. It can be stacked vertically.
  • At least one sensing electrode of the first electrode 241 and the second electrode 245 may include a transparent conductive material to allow electricity to flow without disturbing the transmission of light.
  • the electrode 241 , 245 is indium tin oxide, indium zinc oxide, copper oxide, copper oxide, tin oxide, zinc oxide, titanium oxide, or the like. It may include a metal oxide of.
  • At least one sensing electrode of the first electrode 241 and the second electrode 245 may include a nanowire, a photosensitive nanowire film, carbon nanotubes (CNT), graphene, or a conductive polymer. Can be.
  • At least one sensing electrode of the first electrode 241 and the second electrode 245 may include various metals.
  • the electrodes 241 and 245 may include chromium (Cr), nickel (Ni), copper (Cu), aluminum (Al), silver (Ag), and molybdenum (Mo).
  • Gold (Au), titanium (Ti) and their alloys may include at least one metal.
  • the sensing electrode materials may be mixed and used.
  • the sensing device may further include a controller, and the controller may receive the photocurrent signal generated by the light receiver 240 and analyze the photocurrent signal according to a preset condition.
  • the controller may perform an appropriate analysis of the photocurrent signal according to the purpose according to the purpose and the method of use of the electronic device including the sensor.
  • the sensor including the light emitter and the light receiver is a heartbeat sensor
  • the light signal irradiated by the light emitter is absorbed / reflected from a finger / wrist / cuff located on the cover substrate
  • the light receiver may receive the absorbed / reflected light signal.
  • the optical current is generated according to the intensity of the received optical signal.
  • the controller may measure the pulse according to the period of intensity of the photocurrent signal.
  • the controller may be implemented in the form of an application specific integrated circuit (ASIC) provided in the substrate 210.
  • ASIC application specific integrated circuit
  • the present invention can be applied to a low power consumption heart rate (PPG) sensor
  • the low power consumption heart rate sensor is a substrate, a cover substrate formed on the substrate, a light emitting unit for irradiating an optical signal to the cover substrate, the light emitting unit is irradiated
  • the optical signal is absorbed or reflected on the object on the cover substrate, and includes a light receiving portion for receiving the absorbed or reflected light signal and generates a photocurrent signal
  • the light emitting portion or the light receiving portion is in close contact with the cover substrate It is characterized by being formed.
  • the present invention relates to a sensing device for identifying a state of an object using an optical signal, and more particularly, to a sensing device having a light emitting unit and a light receiving unit between a substrate and a cover substrate, wherein the optical signal irradiated from the light emitting unit
  • the light receiving unit is formed on the cover substrate so that the light receiving unit can be more effectively detected by the light receiving unit, and the light receiving unit forms a concave-convex structure so that the optical signal can be detected more effectively.
  • It relates to a sensing device characterized by improving the sensitivity by including a light collecting portion for more effectively irradiating the object.

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

La présente invention concerne un dispositif de détection servant à détecter l'état d'un objet au moyen d'un signal optique. Plus précisément, la présente invention porte sur un dispositif de détection comprenant une partie d'émission de lumière et une partie de réception de lumière entre un substrat et un substrat de couverture, la partie de réception de lumière étant formée pour être amenée en contact étroit avec le substrat de couverture afin de permettre à un signal optique émis par la partie d'émission de lumière d'être efficacement détecté par la partie de réception de lumière ; la partie de réception de lumière étant formée pour présenter une structure concave-convexe afin de permettre au signal optique d'être efficacement détecté ; et le dispositif de détection comprenant en outre une partie de condensation de lumière pour collecter la lumière provenant de la partie d'émission de lumière afin d'exposer plus efficacement l'objet à la lumière, ce qui permet d'améliorer la sensibilité du dispositif de détection.
PCT/KR2016/015331 2015-12-31 2016-12-27 Dispositif de détection comprenant une partie de réception de lumière à structure concave-convexe et une partie de condensation de lumière Ceased WO2017116116A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201690001263.7U CN208189615U (zh) 2015-12-31 2016-12-27 具备凹凸结构的受光部以及聚光部的感测装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2015-0191331 2015-12-31
KR10-2015-0191328 2015-12-31
KR1020150191331A KR102527098B1 (ko) 2015-12-31 2015-12-31 요철구조의 수광부 및 집광부를 구비한 감지장치
KR1020150191328A KR102375812B1 (ko) 2015-12-31 2015-12-31 요철구조의 수광부를 구비한 감지장치

Publications (1)

Publication Number Publication Date
WO2017116116A1 true WO2017116116A1 (fr) 2017-07-06

Family

ID=59225207

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2016/015331 Ceased WO2017116116A1 (fr) 2015-12-31 2016-12-27 Dispositif de détection comprenant une partie de réception de lumière à structure concave-convexe et une partie de condensation de lumière

Country Status (2)

Country Link
CN (1) CN208189615U (fr)
WO (1) WO2017116116A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11112352B2 (en) 2018-04-05 2021-09-07 Haesung Ds Co., Ltd. Saw based optical sensor device and package including the same
US11944129B2 (en) 2019-06-14 2024-04-02 Kt&G Corporation Optical module and aerosol generating device including the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005110896A (ja) * 2003-10-07 2005-04-28 Canon Inc 指センサ
JP2006130208A (ja) * 2004-11-09 2006-05-25 Kyushu Univ センサ部及び生体センサ
KR20070069826A (ko) * 2005-12-28 2007-07-03 동부일렉트로닉스 주식회사 이미지 센서 및 그의 제조방법
JP2012223414A (ja) * 2011-04-21 2012-11-15 Seiko Epson Corp 生体情報取得装置、および生体認証装置
JP2015223404A (ja) * 2014-05-29 2015-12-14 京セラ株式会社 センサおよび肌情報検出方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005110896A (ja) * 2003-10-07 2005-04-28 Canon Inc 指センサ
JP2006130208A (ja) * 2004-11-09 2006-05-25 Kyushu Univ センサ部及び生体センサ
KR20070069826A (ko) * 2005-12-28 2007-07-03 동부일렉트로닉스 주식회사 이미지 센서 및 그의 제조방법
JP2012223414A (ja) * 2011-04-21 2012-11-15 Seiko Epson Corp 生体情報取得装置、および生体認証装置
JP2015223404A (ja) * 2014-05-29 2015-12-14 京セラ株式会社 センサおよび肌情報検出方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11112352B2 (en) 2018-04-05 2021-09-07 Haesung Ds Co., Ltd. Saw based optical sensor device and package including the same
US11944129B2 (en) 2019-06-14 2024-04-02 Kt&G Corporation Optical module and aerosol generating device including the same

Also Published As

Publication number Publication date
CN208189615U (zh) 2018-12-04

Similar Documents

Publication Publication Date Title
JP5470398B2 (ja) タッチスクリーン用の配列および関連する製造法
AU594397B2 (en) Touch sensitive indicating light
WO2016093669A1 (fr) Ensemble module à capteur d'empreintes digitales intégré à un couvercle pour un dispositif électronique
EP1467224A1 (fr) Détecteur de proximité optique
KR102442045B1 (ko) 유기 박막 포토다이오드 및 이를 포함하는 감지 장치
WO2019205592A1 (fr) Substrat d'affichage d'identification d'empreintes digitales et son procédé d'utilisation, et panneau d'affichage
WO2016043544A2 (fr) Dispositif d'entrée tactile
WO2017099400A1 (fr) Feuille d'électrode pouvant détecter une pression et faisant l'objet d'une compensation de température et dispositif d'entrée tactile
WO2017039282A1 (fr) Détecteur de pression permettant un ajustement de sensibilité de pression, et dispositif d'entrée tactile le comprenant
WO2010085070A2 (fr) Appareil d'entrée
WO2016043546A2 (fr) Téléphone intelligent
KR102375812B1 (ko) 요철구조의 수광부를 구비한 감지장치
WO2017043706A1 (fr) Dispositif de détection
WO2017119703A1 (fr) Dispositif de détection de particules
WO2017116116A1 (fr) Dispositif de détection comprenant une partie de réception de lumière à structure concave-convexe et une partie de condensation de lumière
KR20170003044A (ko) 광차폐층이 형성된 수광부를 구비한 감지장치
WO2017003160A1 (fr) Dispositif de détection à partie de réception de lumière intégrée au substrat de couverture
KR102711354B1 (ko) 광 센서 모듈 및 광 센서 모듈 제조 방법
US11553591B2 (en) Electronic device
KR102527098B1 (ko) 요철구조의 수광부 및 집광부를 구비한 감지장치
KR102496006B1 (ko) 감지 장치
WO2017043823A1 (fr) Dispositif de détection
KR102436331B1 (ko) 심박 센서 및 이를 포함하는 감지 장치
WO2014065532A1 (fr) Panneau tactile et son procédé de fabrication
WO2019235835A1 (fr) Boîtier de dispositif à semi-conducteur

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16882068

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16882068

Country of ref document: EP

Kind code of ref document: A1