WO2017128668A1 - Électrode avant de cellule solaire au silicium cristallin - Google Patents

Électrode avant de cellule solaire au silicium cristallin Download PDF

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Publication number
WO2017128668A1
WO2017128668A1 PCT/CN2016/092194 CN2016092194W WO2017128668A1 WO 2017128668 A1 WO2017128668 A1 WO 2017128668A1 CN 2016092194 W CN2016092194 W CN 2016092194W WO 2017128668 A1 WO2017128668 A1 WO 2017128668A1
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WIPO (PCT)
Prior art keywords
solar cell
crystalline silicon
silicon solar
fine
cell according
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Ceased
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PCT/CN2016/092194
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English (en)
Chinese (zh)
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何凤琴
郑璐
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to the technical field of solar cells, and in particular to a front electrode of a crystalline silicon solar cell.
  • a crystalline silicon solar cell is an electronic component that converts solar energy into electrical energy.
  • the preparation of crystalline silicon solar cells is generally carried out by processes such as texturing, diffusion, coating, screen printing, and sintering.
  • the velvet is divided into single crystal and polycrystalline velvet.
  • the single crystal battery is formed by the method of alkali velvet to form a pyramid suede on the surface of the silicon wafer, and the polycrystalline battery is formed by using an acid etching method to form a pitted surface on the surface of the silicon wafer.
  • the suede surface of the silicon surface can increase the absorption of sunlight on the surface of the battery to achieve the light trapping effect; the diffusion process forms a PN junction into the interior of the silicon wafer by means of thermal diffusion, so that when light is irradiated, a voltage can be formed inside the silicon wafer. It is the basis of solar cell power generation; the coating process is to reduce the composite of minority carriers on the surface of the battery, and can improve the conversion efficiency of the crystalline silicon solar cell; the screen printing process is to make the electrode of the solar cell, so that when the light is irradiated It is possible to derive the current. Screen printing is one of the most widely used processes in the preparation of crystalline silicon cells. The process sequence is to first print and dry the back electrode, then print and dry the aluminum back field, and finally print and dry the front electrode. When sintering is performed, the silver paste used for preparing the electrode is brought into contact with the battery.
  • the electrode structure In the front electrode of the crystalline silicon solar cell, the electrode structure generally includes a main gate line and a sub-gate line which are criss-crossed, and the main gate line is electrically connected to the sub-gate line.
  • the battery When there is light, the battery generates a current, and the current flows through the internal emitter to the surface electrode sub-gate line, collects through the sub-gate line and then flows to the battery main grid for export. The current will be lost during the collection of the secondary gate line, which we call the power loss of the resistor.
  • the main grid line and the sub-gate line of the battery are on the light-receiving surface of the battery, which inevitably blocks a part of the light from being irradiated on the surface of the battery, thereby reducing the effective light-receiving area of the battery, which is called optical loss.
  • optical loss the effective light-receiving area of the battery
  • the number of main gate lines is usually three, and the width thereof is about 1.5 mm; the number of the sub-gate lines is usually 80 to 100, and the width thereof is about 40 ⁇ m.
  • the width of the main gate line is wide, so that The strip of the front electrode and the battery can be soldered well, but the shading area is also large.
  • a front electrode structure without a main gate is proposed in the industry, mainly to remove three main gate lines in the front electrode structure, leaving only the sub-gate line, after the battery is completed, A very thin cylindrical ribbon is used to directly solder to the secondary grid, and the current is directly extracted by the ribbon.
  • the power of the photovoltaic module is lowered due to the abnormality of the soldering or the inability to solder due to the small width of the sub-gate line and the sub-gate line being too low.
  • the present invention provides a front electrode of a crystalline silicon solar cell, which can achieve the purpose of reducing the shading area and ensuring smooth current export.
  • the length of the square side, the diameter of the circle, or the short side of the ellipse is 0.2 to 1 mm, respectively, and the length of the side of the square, the diameter of the circle, or the length of the short side of the ellipse are respectively greater
  • soldering contact is formed on the fine grid line by a secondary printing process.
  • the plurality of sub-gate lines are equally spaced along the first direction
  • the M fine gate lines are equally spaced along the second direction
  • the second direction is perpendicular to the first direction.
  • the number of the sub-gate lines is 80 to 100.
  • soldering contact is disposed at a position where the fine gate line intersects the sub-gate line.
  • N solder contacts on each of the fine gate lines are arranged at equal intervals along the length direction of the thin gate lines.
  • solder contacts in the front electrode are distributed in an array of N rows x M columns.
  • the width of the fine grid line is 0.2 mm;
  • the shape of the solder contacts on one of the fine grid lines is the same, and the shapes of the solder contacts on the adjacent two fine grid lines are different from each other.
  • a fine gate line with a larger number of smaller widths is used instead of the main gate line in the prior art, and the overall shading area is smaller.
  • the optical loss is reduced, and a larger number of fine grid lines are evenly distributed on the front surface of the solar cell, so that the current collected by the sub-gate lines can be more smoothly derived, reducing power loss;
  • Large square, round or elliptical welded contacts increase the contact area of the solder joints and the height of the solder joints.
  • FIG. 1 is a schematic structural view of a front electrode of a solar cell according to an embodiment of the present invention
  • Figure 2 is an enlarged schematic view of a portion A of Figure 1;
  • FIG 3 is an exemplary illustration of an elliptical weld contact in an embodiment of the present invention.
  • the present embodiment provides a front electrode of a crystalline silicon solar cell.
  • the front electrode includes two rows spaced apart from each other in the first direction (such as the Y direction in FIG. 1). a plurality of sub-gate lines 10, a plurality of thin gate lines 20 spaced apart from each other in the second direction (in the X direction in FIG. 1), the plurality of sub-gate lines 10 and the plurality of fine gate lines 20 are electrically connected to each other.
  • the sub-gate line 10 is mainly used to collect the photo-generated current generated by the solar cell, and the fine-gate line 20 is used to collect and output the current collected by the sub-gate line 10.
  • each of the fine gate lines 20 is further provided with a plurality of soldering contacts 30 spaced apart from each other, and the soldering contacts 30 are stacked on the fine grid lines 20 and the fine grid lines 20 is electrically connected, and the shape of the soldering contact 30 includes a circle and a square.
  • the soldering contact 30 is mainly used for soldering connection to the solder ribbon after the battery is fabricated. Specifically in this embodiment, on each of the fine grid lines 20, the circular and square solder contacts 30 are alternately spaced apart. Of course, in other embodiments, the differently shaped solder contacts 30 may also be arranged in any order.
  • the number of the sub-gate lines 10 may be selected from the range of 80 to 100, and the width may be selected to be in the range of 30 to 50 ⁇ m.
  • the number M of the fine gate lines 20 can be selected in the range of 10 to 20, and the width D thereof can be selected in the range of 0.10 to 0.25 mm.
  • the number N of the soldering contacts 30 provided on each of the fine gate lines 20 may be selected to be in the range of 5 to 15, and the diameter R of the circular soldering contacts 30 may be selected in the range of 0.2 to 1 mm, and the soldering is required.
  • the diameter R of the contact point 30 is larger than the width of the thin grid line 20, and the side length L of the square solder contact 30 can be selected to be in the range of 0.2 to 1 mm, and the side length of the solder contact 30 is larger than that of the fine gate line 20. width.
  • the solder contacts 30 are stacked on the fine gate lines 20. Specifically, in the preparation of the front electrode structure, the sub-gate lines 10 and the fine gate lines 20 are first prepared by a single printing process, and then the solder contacts 30 are prepared on the fine gate lines 20 by a secondary printing process.
  • the plurality of sub-gate lines 10 are arranged at equal intervals in a first direction (such as the Y direction in FIG. 1), and the M thin gate lines 20 are in a second direction ( The X direction in FIG. 1 is equally spaced, and the second direction is perpendicular to the first direction.
  • the soldering contact 30 is disposed at a position where the fine gate line 20 intersects the sub-gate line 10, and N soldering contacts 30 on each of the fine gate lines 20 along the thin grid line 20 is arranged at equal intervals in the longitudinal direction.
  • the arrangement pitch of the N solder contacts 30 on each of the fine gate lines 20 is equal, and therefore, in the entire front electrode structure, all the solder contacts 30 are provided.
  • the circular and square solder contacts 30 are alternately spaced on each of the fine gate lines 20, in the N rows x M columns of the solder contacts 30, the odd number of circular solder contacts 30, even behavior Square solder contacts 30; of course, it is also possible to provide a solder contact 30 with an even number of circular shapes and a solder contact 30 with an odd number of squares.
  • the shape of the solder contacts 30 disposed on one of the fine gate lines 20 may be the same, and the shapes of the solder contacts 30 on the adjacent two fine gate lines 20 are mutually Not the same.
  • the shape of the soldering contact 30 on the first thin gate line 20 may be set to a circular shape.
  • the shape of the soldering contact 30 on the second fine grid line 20 is square, that is, in the soldering contact 30 of the N rows x M columns, the odd number is a circular soldering contact 30, and the even columns are square solder contacts.
  • Point 30 can also be set to a solder joint 30 having an even number of circular shapes, and an odd number of square solder contacts 30.
  • the front electrode of the crystalline silicon solar cell provided by the above embodiments can effectively reduce the light shielding area.
  • the shading area is calculated according to the front electrode of the existing three main grid and the front electrode structure provided by the embodiment of the present invention:
  • the front electrode structure of the existing three main grids In the conventional structure of three 1.5mm wide main gate lines and 90 40 ⁇ m sub grid lines, the main gate lines can be designed in a hollow form to reduce the silver paste used for printing, but all areas of the main grid will still be soldered to a width of about 1.5 mm during soldering.
  • the total occlusion area of the conventional three-main gate front electrode is 1262.6 mm 2 .
  • the number of sub-gate lines is 90 and the width is 40 ⁇ m; the number of fine gate lines is 15 and the width is 0.2 mm; the number of solder contacts on each fine grid line is 10
  • the shape of the welded contact is half round, and its diameter R is 0.8 mm, and the other half is square, and its side length is 0.8 mm. then:
  • solder contact 30 can also be designed to be elliptical. That is, the shape of the welding contact 30 includes an ellipse and a circle, or includes an ellipse and a square, and may also include an ellipse and a circle as well as a square, an ellipse and a circle, and a square at each of the fine grid lines 20.
  • the upper alternate interval settings are set in any order.
  • an elliptical solder contact 30, as shown in FIG. 3 is also disposed at a position where the thin gate line 20 intersects the sub-gate line 10.
  • the long side of the elliptical shape is the same as the direction in which the thin grid line 20 extends, and the short side of the elliptical shape is the same as the direction in which the sub-gate line 10 extends.
  • the length of the short side of the elliptical shape may be selected to be in the range of 0.2 to 1 mm, and the length L1 of the short side of the solder contact 30 is required to be larger than the width D of the thin gate line 20.
  • the front electrode of the crystalline silicon solar cell provided by the above embodiment, a larger number of fine gate lines with smaller widths are used instead of the main gate lines in the prior art, and the overall shading area is smaller and reduced.
  • Light loss, and a larger number of fine grid lines are evenly distributed on the front side of the solar cell, so that the current collected by the sub-gate line can be more smoothly derived, reducing power loss; in addition, the laminated area on the fine grid line is larger.
  • the square or round or elliptical welding contacts increase the contact area of the solder joints and the height of the solder joints. When soldering the solder ribbon, there is less problem of abnormal soldering of the solder ribbon and the battery.

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  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L'invention porte sur une électrode avant d'une cellule solaire au silicium cristallin, comprenant de multiples lignes de grille secondaires (10) s'étendant dans une première direction et disposées en rangées à intervalles réguliers, ladite électrode avant comprenant également un nombre M de lignes de grille fines (20) s'étendant dans une deuxième direction et disposées en rangées à intervalles réguliers, les lignes de grille fines (20) et les lignes de grille secondaires (10) étant électriquement connectées, la largeur des lignes de grille fines (20) étant comprise entre 0,10 et 0,25 mm, et le nombre M étant compris entre 10 et 20 ; un nombre N de contacts de soudage (30) sont disposés à intervalles sur chaque ligne de grille fine (20), les contacts de soudage (30) étant stratifiés sur la ligne de grille fine (20) et électriquement connectés à ladite ligne de grille fine (20), les formes des contacts de soudage (30) étant au moins deux formes parmi des formes carrée, circulaire et elliptique, la longueur du côté du carré, le diamètre du cercle ou le petit axe de l'ellipse étant de 0,2 à 1 mm, et la longueur du côté du carré, le diamètre du cercle ou le petit axe de l'ellipse étant supérieurs à la largeur d'une ligne de grille fine (20) ; et le nombre N étant compris entre 5 et 15. Cette structure d'électrode positive peut atteindre le double objectif de réduire la surface de blocage de lumière et d'assurer une distribution de courant régulière.
PCT/CN2016/092194 2016-01-28 2016-07-29 Électrode avant de cellule solaire au silicium cristallin Ceased WO2017128668A1 (fr)

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Application Number Priority Date Filing Date Title
CN201610058600.2A CN105529373B (zh) 2016-01-28 2016-01-28 一种晶硅太阳能电池的正面电极
CN201610058600.2 2016-01-28

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Cited By (5)

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CN108481892A (zh) * 2018-04-11 2018-09-04 张家港国龙光伏科技有限公司 一种二次印刷无网结网版
CN109873054A (zh) * 2019-04-04 2019-06-11 乐山新天源太阳能科技有限公司 黑硅太阳能电池生产线
CN112635586A (zh) * 2020-12-30 2021-04-09 通威太阳能（成都）有限公司 一种高效高可靠性perc太阳能电池及其正面电极和制作方法
CN114122159A (zh) * 2021-07-08 2022-03-01 天合光能股份有限公司 一种电池片
EP4141965A1 (fr) * 2021-08-27 2023-03-01 Shanghai Jinko Green Energy Enterprise Management Co., Ltd. Cellule solaire photovoltaïque, module de cellule solaire et son procédé de fabrication

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CN105529373B (zh) * 2016-01-28 2018-01-16 黄河水电光伏产业技术有限公司 一种晶硅太阳能电池的正面电极
CN105552144B (zh) * 2016-01-28 2018-02-23 黄河水电光伏产业技术有限公司 一种晶硅太阳能电池的正面电极
CN107170844A (zh) * 2017-07-10 2017-09-15 苏州腾晖光伏技术有限公司 一种无主栅的太阳能电池片及光伏组件
CN108010970A (zh) * 2017-11-17 2018-05-08 南通苏民新能源科技有限公司 一种叉指背接触晶体硅太阳能电池电极及其制作方法
CN116314130B (zh) * 2021-12-09 2026-04-17 浙江晶科能源有限公司 太阳能电池及识别方法
CN115332367B (zh) * 2022-08-16 2025-01-17 普乐新能源科技(泰兴)有限公司 无主栅电极结构、叉指背接触电池片、电池组件
CN116864549A (zh) * 2023-07-17 2023-10-10 天合光能股份有限公司 太阳能电池片和光伏组件
CN121815766A (zh) * 2025-09-28 2026-04-07 晶科能源(海宁)有限公司 一种太阳能电池片及光伏组件
CN121240556A (zh) * 2025-12-04 2025-12-30 晶科能源(海宁)有限公司 太阳能电池片及光伏组件

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US20100000602A1 (en) * 2007-12-11 2010-01-07 Evergreen Solar, Inc. Photovoltaic Cell with Efficient Finger and Tab Layout
CN102800713A (zh) * 2012-08-27 2012-11-28 英利能源（中国）有限公司 太阳能电池片及太阳能电池
CN203250754U (zh) * 2013-05-24 2013-10-23 浙江昱辉阳光能源江苏有限公司 一种太阳能电池片的正面栅线及太阳能电池片
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108481892A (zh) * 2018-04-11 2018-09-04 张家港国龙光伏科技有限公司 一种二次印刷无网结网版
CN109873054A (zh) * 2019-04-04 2019-06-11 乐山新天源太阳能科技有限公司 黑硅太阳能电池生产线
CN109873054B (zh) * 2019-04-04 2024-06-07 乐山新天源太阳能科技有限公司 黑硅太阳能电池生产线
CN112635586A (zh) * 2020-12-30 2021-04-09 通威太阳能（成都）有限公司 一种高效高可靠性perc太阳能电池及其正面电极和制作方法
CN114122159A (zh) * 2021-07-08 2022-03-01 天合光能股份有限公司 一种电池片
WO2023280247A1 (fr) * 2021-07-08 2023-01-12 天合光能股份有限公司 Élément de cellule
EP4141965A1 (fr) * 2021-08-27 2023-03-01 Shanghai Jinko Green Energy Enterprise Management Co., Ltd. Cellule solaire photovoltaïque, module de cellule solaire et son procédé de fabrication
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US12446355B2 (en) 2021-08-27 2025-10-14 Shanghai Jinko Green Energy Enterprise Management Co., Ltd. Photovoltaic solar cell, solar cell module and manufacturing process

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