WO2017128794A1 - 减反射结构及其制造方法、显示器及其制造方法 - Google Patents

减反射结构及其制造方法、显示器及其制造方法 Download PDF

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WO2017128794A1
WO2017128794A1 PCT/CN2016/104176 CN2016104176W WO2017128794A1 WO 2017128794 A1 WO2017128794 A1 WO 2017128794A1 CN 2016104176 W CN2016104176 W CN 2016104176W WO 2017128794 A1 WO2017128794 A1 WO 2017128794A1
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Prior art keywords
reflection structure
alignment layer
retardation film
layer
substrate
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PCT/CN2016/104176
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English (en)
French (fr)
Inventor
谭纪风
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to EP16867381.2A priority Critical patent/EP3415960B1/en
Priority to US15/531,791 priority patent/US10684394B2/en
Priority to JP2017527603A priority patent/JP7067927B2/ja
Publication of WO2017128794A1 publication Critical patent/WO2017128794A1/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/111—Anti-reflection coatings using layers comprising organic materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3033—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3033—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid
    • G02B5/3041—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid comprising multiple thin layers, e.g. multilayer stacks
    • G02B5/305—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid comprising multiple thin layers, e.g. multilayer stacks including organic materials, e.g. polymeric layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3083—Birefringent or phase retarding elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133502—Antiglare, refractive index matching layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/13363—Birefringent elements, e.g. for optical compensation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G02F1/133531—Polarisers characterised by the arrangement of polariser or analyser axes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/13356—Structural association of cells with optical devices, e.g. polarisers or reflectors characterised by the placement of the optical elements
    • G02F1/133562—Structural association of cells with optical devices, e.g. polarisers or reflectors characterised by the placement of the optical elements on the viewer side
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/13363—Birefringent elements, e.g. for optical compensation
    • G02F1/133635—Multifunctional compensators
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/13363—Birefringent elements, e.g. for optical compensation
    • G02F1/133638—Waveplates, i.e. plates with a retardation value of lambda/n
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers

Definitions

  • Embodiments of the present invention relate to an anti-reflection structure, a method of fabricating the same, a display, and a method of fabricating the same.
  • the flexible display has become one of the main trends of display technology due to its thin thickness, light weight, bendability and even curlability, and has a promising future market.
  • a polarizer attached to the outside of the display panel is generally used as an anti-reflection structure, but such an anti-reflection structure has a large thickness, for example, a commonly used polarizer
  • the thickness of the retardation film is between 100 and 150 ⁇ m, and the thickness of the antireflection structure formed by the two is between 120 and 250 ⁇ m.
  • the use of this structure makes the thickness of the flexible display large, which makes the flexible display thick, loses its thinness and is not suitable for flexible display.
  • At least one embodiment of the present invention provides an anti-reflection structure, a method of fabricating the same, a display, and a method of fabricating the same, wherein the anti-reflection structure has a small thickness, and the display including the anti-reflection structure can not only realize a light and thin flexible display, but further It also guarantees a high degree of polarization.
  • At least one embodiment of the present invention provides an anti-reflection structure comprising: a retardation film, a linear polarizing plate, and at least one alignment layer configured to orient the retardation film and the linear polarization film, wherein the retardation film and The linear polarizing plate includes a liquid crystal.
  • At least one embodiment of the present invention further provides a display comprising: a display panel and the anti-reflection structure as described above, wherein the display panel comprises an array substrate and an opposite substrate disposed opposite to the array substrate, wherein The anti-reflection structure is disposed between the array substrate and the opposite substrate; or the anti-reflection structure is located at an opposite side of the array substrate from the array substrate side.
  • At least one embodiment of the present invention further provides a method of manufacturing a display, comprising: providing a display panel, the display panel including an array substrate and a counter substrate opposite to each other, the array substrate comprising: a substrate; and a plurality of a pixel unit formed on the base substrate and having an organic light emitting diode and a thin film transistor formed in each of the plurality of pixel units, wherein the plurality of pixel units are located on the opposite substrate and the substrate Between the substrates; manufacturing the anti-reflection structure, comprising: forming a retardation film, a first alignment layer, and a linear polarization plate on the base substrate on which the organic light emitting diode and the thin film transistor are formed or on the opposite substrate; The first alignment layer is located between the retardation film and the linear polarizer, and the retardation film and the linear polarizer comprise liquid crystal.
  • At least one embodiment of the present invention also provides a method of fabricating an anti-reflection structure, comprising: preparing a substrate; forming a retardation film, a first alignment layer, and a linear polarization plate on the substrate, wherein the first alignment layer is located at Between the retardation film and the linear polarizing plate, the retardation film and the linear polarizing plate comprise liquid crystal.
  • FIG. 1a and 1b are respectively schematic diagrams showing two exemplary structures of an anti-reflection structure according to an embodiment of the present invention
  • FIG. 2 is a schematic structural view of a display including an anti-reflection structure according to an embodiment of the present invention
  • FIG. 3 is a schematic structural view of a display in which an anti-reflection structure is disposed in a display panel according to an embodiment of the present invention
  • FIG. 4a is a schematic structural view of a display provided with an anti-reflection structure on a substrate according to an embodiment of the present invention
  • 4b is a schematic structural view of a display provided with an anti-reflection structure on a counter substrate according to an embodiment of the invention
  • 4c is another schematic structural view of a display in which an anti-reflection structure is disposed on a substrate according to an embodiment of the present invention
  • 4d is a display of an anti-reflection structure disposed on a counter substrate according to an embodiment of the present invention Another structural diagram;
  • 4e is a schematic structural view of a display of an anti-reflection structure disposed on a substrate according to an embodiment of the invention.
  • Figure 5 is a cross-sectional structural view of a display according to an embodiment of the present invention.
  • FIG. 6 is a schematic diagram showing the relationship between the degree of polarization of the anti-reflection structure and the wavelength of the incident light
  • FIG. 7 is a graph showing transmittance of a light-cut layer according to an embodiment of the present invention.
  • FIG. 8a to 8e are cross-sectional views showing a structure obtained after performing each step of manufacturing an anti-reflection structure in a manufacturing method according to an embodiment of the present invention.
  • 9a to 9d are structural cross-sectional views obtained after performing the steps of manufacturing an anti-reflection structure on a counter substrate in a manufacturing method according to an embodiment of the present invention.
  • FIG. 10 is a flow chart showing formation of an anti-reflection structure on a substrate in a manufacturing method according to an embodiment of the present invention
  • FIG. 11 is a flow chart of forming an anti-reflection structure on a counter substrate in a manufacturing method according to an embodiment of the present invention, wherein an anti-reflection structure is disposed on a side of the opposite substrate opposite to the array substrate;
  • FIG. 12 is a flow chart of forming an anti-reflection structure on a counter substrate in a manufacturing method according to an embodiment of the present invention, wherein an anti-reflection structure is disposed between the opposite substrate and the array substrate.
  • At least one embodiment of the present invention provides an anti-reflection structure, a method of fabricating the same, a display, and a method of fabricating the same.
  • the anti-reflection structure sequentially includes: a retardation film; a first alignment layer disposed on a light-emitting side of the retardation film; and a linear polarization plate disposed on a light-emitting side of the first alignment layer; wherein the retardation film and the The linear polarizing plate includes a liquid crystal.
  • the anti-reflection structure according to an embodiment of the present invention has a significantly reduced thickness with respect to the existing anti-reflection structure attached to the outside of the flexible display panel, so that the display using the anti-reflection structure can realize ultra-thin display.
  • the anti-reflection structure according to the embodiment of the present invention in order to obtain a higher degree of polarization while thinning the anti-reflection structure, the anti-reflection structure according to the embodiment of the present invention further provides a light-cut layer, which is configured to be cut off to be disadvantageous to polarized light. The increased light, thereby achieving a higher degree of polarization while reducing the thickness.
  • the anti-reflection structure 101 sequentially includes a retardation film 102, a first alignment layer 103, and a linear polarization plate 104.
  • the first alignment layer 103 is disposed on the light exit side of the retardation film 102;
  • the linear polarizer 104 is disposed on the light exit side of the first alignment layer 103, wherein the retardation film and the linear polarizer include liquid crystal.
  • the light-emitting side is relative to the display light, and the light-emitting side refers to the side located in the light-emitting direction of the display light, and the corresponding light-in side in the following description refers to the display light.
  • L1 indicates the light outgoing direction of the display light.
  • the retardation film and the liquid crystal included in the linear polarizing plate may be a polymerizable liquid crystal
  • the linear polarizing plate 104 may include a dichroic dye, a polymerizable liquid crystal, and a photoinitiator
  • the retardation film 102 may include a polymerizable liquid crystal and light.
  • the dichroic dye may be X11 (BASF) or S-428
  • the polymerizable liquid crystal may be a common nematic liquid crystal such as LC242 (merck)
  • the photoinitiator may be 184.
  • the linear polarizer 104 may include a dichroic dye having a mass percentage of 1% to 20%.
  • the material, the mass percentage is 75%-95% of the polymerizable liquid crystal and the mass percentage is 0.1%-5% of the photoinitiator.
  • the percentages of the dichroic dye, the polymerizable liquid crystal, and the photoinitiator are 10%, 87.5%, and 2.5%, respectively.
  • the retardation film 102 may include from 75% to 99.5% by weight of the polymerizable liquid crystal and from 0.5% to 25% by weight of the photoinitiator.
  • a retardation film including a liquid crystal material is required to be oriented during formation. 102 also needs to be oriented during the formation process.
  • the linear polarizing plate 104 and the retardation film 102 may be aligned by sharing the first alignment layer 103 therebetween; or, the linear polarization plate 104 and the retardation film 102 may be aligned with different alignment layers, respectively.
  • the first alignment layer 103 may be configured to orient the retardation film 102, and the anti-reflection structure may further include a second alignment layer 109 disposed on the light exit side of the in-line polarizer 104, and the The second alignment layer 109 is configured to orient the linear polarizing plate 104.
  • the first alignment layer 103 may also be configured to orient the linearly polarizing plate 104, and the anti-reflection structure 101 may include a third alignment layer 130 disposed on the light incident side of the retardation film 102 and It is configured to orient the retardation film 102.
  • both the linearly polarizing plate and the retardation film of the anti-reflection structure are formed using a liquid crystal material, for example, by a coating method, which is reduced according to an embodiment of the present invention as compared with a conventional anti-reflection structure for a display.
  • the thickness of the reflective structure can be significantly reduced, for example, the thickness can be reduced to about 10 ⁇ m, even much less than 10 ⁇ m, for example, 5.27 ⁇ m given in the example below.
  • the degree of polarization may be low, for example, 60%.
  • the anti-reflection structure may further include a light cutoff layer disposed on the light exit side of the in-line polarizer and configured to cut off light of a specific wavelength range.
  • the light cutoff layer 108 may also be disposed on the light exit side of the second alignment layer 109.
  • the thickness of the first alignment layer 103, the second alignment layer 109, and the third alignment layer 130 may be in a range of 0.05 ⁇ m to 0.15 ⁇ m, for example, both may be 0.1 ⁇ m.
  • the linear polarizing plate 104 may have a thickness of 2.5 ⁇ m to 3.5 ⁇ m, for example, 3 ⁇ m.
  • the retardation film 102 may have a thickness of 1.5 ⁇ m to 2.5 ⁇ m, for example, 2 ⁇ m.
  • the thickness of the light-cut layer 108 may be from 0.06 ⁇ m to 0.08 ⁇ m, for example, 0.07 ⁇ m.
  • the anti-reflection structure sequentially includes a retardation film, a first alignment layer, a linear polarization plate, a second alignment layer, and a light-cut layer.
  • a retardation film sequentially includes a retardation film, a first alignment layer, a linear polarization plate, a second alignment layer, and a light-cut layer.
  • the thickness of the light-cut layer 108 is, for example, 0.07 ⁇ m
  • the thickness of both alignment layers is, for example, 0.1 ⁇ m.
  • the thickness of the linearly polarizing plate 104 is, for example, 3 ⁇ m, and when the thickness of the retardation film 103 is, for example, 2 ⁇ m, the total thickness of the anti-reflection structure is 5.27 ⁇ m, less than 10 ⁇ m, and compared with the conventional anti-reflection structure having a thickness of about 120-250 ⁇ m. The thickness is remarkably reduced, and the anti-reflection structure having the structure can increase the degree of polarization to 99.7%, which is advantageous for achieving ultra-thin display.
  • the light cutoff layer 108 can be configured to turn off light of a specific wavelength range, for example, light having a cutoff wavelength ranging from 650 nm to 780 nm, preferably, light having a cutoff wavelength ranging from 700 nm to 780 nm, such that only a portion of the infrared can be cut off.
  • Light rather than cutting off all of the infrared light, can greatly increase the degree of polarization without affecting the display.
  • the filtering effect is greatly improved, so that the anti-reflection structure with high polarization can be realized while the thickness is thinned, so that it can be well applied to the display. Achieve ultra-thin flexible display.
  • the light cutoff layer 108 may include a plurality of high refractive index layers and a plurality of low refractive index layers alternately disposed, the thickness of each of the plurality of high refractive index layers may be equal or unequal. The thickness of each of the plurality of low refractive index layers may also be equal or unequal, and the thickness of the high refractive index layer may also be equal to or not equal to the thickness of the low refractive index layer, which is not limited by the embodiment of the present invention.
  • the high refractive index layer may be a silicon nitride layer
  • the low refractive index layer may be a silicon oxide layer
  • the light cutoff layer 108 may include a plurality of layers of silicon nitride layers and a plurality of silicon oxide layers alternately disposed.
  • a silicon nitride layer and a silicon oxide layer may be alternately deposited by a plasma vapor deposition (PECVD) method, wherein the reaction gas for depositing the silicon nitride layer may be a mixed gas of SiH 4 , NH 3 , and N 2 , for example, In the mixed gas, the flow ratio of SiH 4 , NH 3 and N 2 may be 16: 4 :1; the reaction gas for depositing the silicon oxide layer may be a mixed gas of SiH 4 , NO 2 and N 2 , for example, in the mixed gas The flow ratio of SiH 4 , NH 3 and N 2 may be 40:4:1.
  • the thickness of the film layer can be controlled by controlling the reaction time, and the multilayer film can be alternately deposited by opening and closing the gas path of the reaction gas.
  • the retardation film according to the embodiment of the present invention may be a ⁇ /4 wave plate, and ⁇ may take an average value of visible light wavelengths, or may be set by a person skilled in the art according to actual needs, and an embodiment of the present invention This is not limited.
  • both the linear polarizing plate and the retardation film are made of a liquid crystal material.
  • the material formation can be formed, for example, by a coating method, so that the thickness of the anti-reflection structure can be significantly reduced as compared with the conventional anti-reflection structure for a display, and further includes light having a cutoff wavelength ranging from 650 nm to 780 nm.
  • the light-cutting layer causes all or part of the light having an adverse effect on the polarization degree of the anti-reflection structure to be cut off, so that the polarization degree of the anti-reflection structure can be significantly improved.
  • the polarization degree of the anti-reflection structure can be increased from 60% to 99.7%.
  • an anti-reflection structure in which the thickness is remarkably thinned and the degree of polarization is remarkably improved is realized, which is suitable for realizing an ultra-thin flexible display.
  • the anti-reflection structure 101 sequentially includes a first alignment layer 103, a retardation film 102, a linear polarization plate 104, and a second alignment layer 109.
  • the first alignment layer 103 is disposed on the light incident side of the retardation film 102;
  • the linear polarization plate 104 is disposed on the light exiting side of the retardation film 102, wherein the retardation film and the linear polarizer include liquid crystal.
  • the light-emitting side is relative to the display light, and the light-emitting side refers to the side located in the light-emitting direction of the display light, and the corresponding light-in side in the following description refers to the display light.
  • L1 indicates the light outgoing direction of the display light.
  • the retardation film and the liquid crystal included in the linear polarizing plate may be a polymerizable liquid crystal
  • the linear polarizing plate 104 may include a dichroic dye, a polymerizable liquid crystal, and a photoinitiator
  • the retardation film 102 may include a polymerizable liquid crystal and light.
  • the dichroic dye may be X11 (BASF) or S-428
  • the polymerizable liquid crystal may be a common nematic liquid crystal such as LC242 (merck)
  • the photoinitiator may be 184.
  • the linear polarizing plate 104 may include a dichroic dye having a mass percentage of 1% to 20%, a polymerizable liquid crystal having a mass percentage of 75% to 95%, and a photoinitiator having a mass percentage of 0.1% to 5%.
  • the percentages of the dichroic dye, the polymerizable liquid crystal, and the photoinitiator are 10%, 87.5%, and 2.5%, respectively.
  • the retardation film 102 may include from 75% to 99.5% by weight of the polymerizable liquid crystal and from 0.5% to 25% by weight of the photoinitiator.
  • the anti-reflection structure may further include a light cutoff layer disposed on the light exit side of the in-line polarizer and configured to cut off light of a specific wavelength range.
  • the light cutoff layer 108 may also be disposed on the light exit side of the second alignment layer 109.
  • the thicknesses of the first alignment layer 103 and the second alignment layer 109 may each be in the range of 0.05 ⁇ m to 0.15 ⁇ m, for example, both may be 0.1 ⁇ m.
  • the linear polarizing plate 104 may have a thickness of 2.5 ⁇ m to 3.5 ⁇ m, for example, 3 ⁇ m.
  • the retardation film 102 may have a thickness of 1.5 ⁇ m to 2.5 ⁇ m, for example, 2 ⁇ m.
  • the thickness of the light-cut layer 108 may be from 0.06 ⁇ m to 0.08 ⁇ m, for example, 0.07 ⁇ m.
  • the light cutoff layer 108 can be configured to turn off light of a specific wavelength range, for example, light having a cutoff wavelength ranging from 650 nm to 780 nm, preferably, light having a cutoff wavelength ranging from 700 nm to 780 nm, such that only a portion of the infrared can be cut off.
  • Light rather than cutting off all of the infrared light, can greatly increase the degree of polarization without affecting the display.
  • the filtering effect is greatly improved, so that the anti-reflection structure with high polarization can be realized while the thickness is thinned, so that it can be well applied to the display. Achieve ultra-thin flexible display.
  • the light cutoff layer 108 may include a plurality of high refractive index layers and a plurality of low refractive index layers alternately disposed, the thickness of each of the plurality of high refractive index layers may be equal or unequal. The thickness of each of the plurality of low refractive index layers may also be equal or unequal, and the thickness of the high refractive index layer may also be equal to or not equal to the thickness of the low refractive index layer, which is not limited by the embodiment of the present invention.
  • the high refractive index layer may be a silicon nitride layer
  • the low refractive index layer may be a silicon oxide layer
  • the light cutoff layer 108 may include a plurality of layers of silicon nitride layers and a plurality of silicon oxide layers alternately disposed.
  • a silicon nitride layer and a silicon oxide layer may be alternately deposited by a plasma vapor deposition (PECVD) method, wherein the reaction gas for depositing the silicon nitride layer may be a mixed gas of SiH 4 , NH 3 , and N 2 , for example, In the mixed gas, the flow ratio of SiH 4 , NH 3 and N 2 may be 16: 4 :1; the reaction gas for depositing the silicon oxide layer may be a mixed gas of SiH 4 , NO 2 and N 2 , for example, in the mixed gas The flow ratio of SiH 4 , NH 3 and N 2 may be 40:4:1.
  • the thickness of the film layer can be controlled by controlling the reaction time, and the multilayer film can be alternately deposited by opening and closing the gas path of the reaction gas.
  • the retardation film according to the embodiment of the present invention may be a ⁇ /4 wave plate, and ⁇ may take an average value of visible light wavelengths, or may be set by a person skilled in the art according to actual needs, and an embodiment of the present invention This is not limited.
  • both the linear polarizing plate and the retardation film are formed using a liquid crystal material, for example, by a coating method, which is compared with a conventional anti-reflection structure for a display, and an anti-reflection structure.
  • the thickness can be significantly reduced, and further includes a light cutoff layer that cuts off light having a wavelength in the range of 650 nm to 780 nm, which is disadvantageous for the degree of polarization of the antireflection structure.
  • the affected light is completely or partially cut off, so that the polarization degree of the anti-reflection structure can be significantly improved.
  • the polarization degree of the anti-reflection structure can be increased from 60% to 99.7%, thereby achieving significant thickness reduction and significant increase in polarization.
  • Anti-reflective structure suitable for ultra-thin flexible display.
  • the embodiment provides a manufacturing method for manufacturing the anti-reflection structure according to the first embodiment and the second embodiment.
  • the following is an example of manufacturing the anti-reflection structure according to the embodiment of the present invention by taking the anti-reflection structure of the first embodiment as an example. Describe.
  • the method of manufacturing the anti-reflection structure according to the embodiment includes:
  • the first alignment layer is between the retardation film and the linear polarizer, and the retardation film and the linear polarizer comprise liquid crystal.
  • forming the retardation film, the first alignment layer, and the linear polarization sheet on the substrate may include: forming a retardation film on the substrate; forming a first on the retardation film An alignment layer; and a linear polarizing plate is formed on the first alignment layer.
  • forming the retardation film, the first alignment layer, and the linear polarization plate on the substrate includes: forming a linearly polarizing plate on the substrate; forming a first orientation on the linear polarizing plate a layer; and forming a retardation film on the first alignment layer.
  • This embodiment provides a display.
  • 2 is a schematic structural diagram of a display having an anti-reflection structure, the display includes: a display panel 100 and an anti-reflection structure 101, wherein the anti-reflection structure 101 sequentially includes a retardation film 102, a first alignment layer 103, and Linear polarizing plate 104.
  • the first alignment layer 103 is disposed on the light exit side of the retardation film 102; the linear polarization sheet 104 is disposed on the light exit side of the first alignment layer 103.
  • the anti-reflection structure 101 in the example shown in FIG. 2 is disposed on the light-emitting side of the display panel 100, but the anti-reflection structure 101 may be disposed on the display panel in addition to the example illustrated in FIG. The interior of 100.
  • the light-emitting side is relative to the display light, and the light-emitting side refers to the side located in the light-emitting direction of the display light, and the corresponding light-in side in the following description refers to the display light.
  • L1 indicates the light outgoing direction of the display light.
  • the display panel 100 in the display includes an array substrate 111 and an opposite substrate 107, wherein the array substrate 111 includes a base substrate 105 and a plurality of pixel units 106.
  • the array substrate 111 includes a base substrate 105 and a plurality of pixel units 106.
  • a plurality of pixel units 106 are formed on the base substrate 105 and an organic light emitting diode and a thin film transistor are formed in each of the plurality of pixel units 106.
  • the opposite substrate 107 is disposed on the light emitting side and the array of the plurality of pixel units 106.
  • the substrate 111 is opposite to the case, and the anti-reflection structure 101 is disposed between the array substrate 111 and the opposite substrate 107.
  • the anti-reflection structure 101 is disposed between the opposite substrate 107 and the array substrate 111; alternatively, the anti-reflection structure 101 may also be disposed on a side of the opposite substrate opposite to the array substrate.
  • the anti-reflection structure 101 is disposed between the opposite substrate 107 and the array substrate 111, and a plurality of pixel units 106 are formed on the base substrate 105, and each of the plurality of pixel units 106 is formed therein.
  • the organic light emitting diode and the thin film transistor form an anti-reflection structure 101 on a base substrate on which a plurality of pixel units 106 are formed.
  • a planarization layer 110 may be formed between the anti-reflection structure 101 and the base substrate 105 on which the organic light emitting diode and the thin film transistor are formed, and the planarization layer 110 may be reversed by using materials known to the inventors. Forming, glass reflow method, spin-on glass method, chemical mechanical planarization method, etc.
  • the anti-reflection structure 101 may also be disposed on a side opposite to the array substrate 111 of the opposite substrate 107, wherein the plurality of pixel units 106 are formed on the substrate substrate 105, and the plurality of pixels An organic light emitting diode and a thin film transistor are formed in each of the cells 106.
  • the anti-reflection structure 101 may further include a protective layer 120 on the light exiting side of the linear polarizing plate 104, and is configured to protect the anti-reflective structure 101.
  • the protective layer 120 may be A light transmissive insulating material is formed.
  • the linear polarizer 104 may include a dichroic dye, a polymerizable liquid crystal, and a photoinitiator
  • the retardation film 102 may include a polymerizable liquid crystal and a photoinitiator.
  • the dichroic dye may be X11 (BASF) or S-428;
  • the polymerizable liquid crystal may be a common nematic liquid crystal such as LC242 (merck), and the photoinitiator may be 184.
  • the linear polarizer 104 may include a dichroic dye having a mass percentage of 1% to 20%.
  • the material, the mass percentage is 75%-95% of the polymerizable liquid crystal and the mass percentage is 0.1%-5% of the photoinitiator.
  • the percentages of the dichroic dye, the polymerizable liquid crystal, and the photoinitiator are 10%, 87.5%, and 2.5%, respectively.
  • the retardation film 102 may include from 75% to 99.5% by weight of the polymerizable liquid crystal and from 0.5% to 25% by weight of the photoinitiator.
  • a retardation film including a liquid crystal material is required to be oriented during formation. 102 also needs to be oriented during the formation process.
  • the linear polarizing plate 104 and the retardation film 102 may be aligned by sharing the first alignment layer 103 therebetween; or, the linear polarization plate 104 and the retardation film 102 may be aligned with different alignment layers, respectively.
  • the first alignment layer 103 may be configured to orient the retardation film 102
  • the anti-reflection structure may further include a second alignment layer 109 disposed on the light exit side of the in-line polarizer 104
  • the The second alignment layer 109 is configured to orient the linear polarizing plate 104.
  • the second alignment layer 109 may be disposed between the opposite substrate 107 and the linear polarizing plate 104; alternatively, as shown in FIG. 4d, and FIG. 4b
  • a second alignment layer 109 may be disposed between the protective layer 120 and the linear polarizer 104.
  • the first alignment layer 103 may also be configured to orient the linearly polarizing plate 104, and the anti-reflection structure 101 may include a third alignment layer 130 disposed on the light incident side of the retardation film 102 and It is configured to orient the retardation film 102.
  • the third alignment layer 130 is disposed on the base layer 110 and the retardation film 102 on the substrate substrate on which the organic light emitting diode and the thin film transistor are formed.
  • the third alignment layer is formed between the opposite substrate and the retardation film 102.
  • both the linearly polarizing plate and the retardation film of the anti-reflection structure are formed using a liquid crystal material, for example, by a coating method, which is reduced according to an embodiment of the present invention as compared with a conventional anti-reflection structure for a display.
  • the thickness of the reflective structure can be significantly reduced, for example, the thickness can be reduced to about 10 ⁇ m, even much less than 10 ⁇ m, for example, 5.27 ⁇ m given in the example below.
  • the degree of polarization may be low, for example, 60%.
  • the anti-reflection structure may further include a light cutoff layer disposed on the light exit side of the linear polarizer and configured to be cut off Light in a specific wavelength range.
  • a light cutoff layer disposed on the light exit side of the linear polarizer and configured to be cut off Light in a specific wavelength range.
  • the retardation film 102, the first alignment layer 103, and the linear polarization plate 104 are sequentially disposed on the planarization layer 110 corresponding to the display shown in FIG. 4a, and the light exiting side of the linear polarization film 104 forms light.
  • Cutoff layer 108 may be disposed on the light exit side of the second alignment layer 109 corresponding to the display structure illustrated in FIGS. 4c and 4d.
  • the thickness of the first alignment layer 103, the second alignment layer 109, and the third alignment layer 130 may be in a range of 0.05 ⁇ m to 0.15 ⁇ m, for example, both may be 0.1 ⁇ m.
  • the linear polarizing plate 104 may have a thickness of 2.5 ⁇ m to 3.5 ⁇ m, for example, 3 ⁇ m.
  • the retardation film 102 may have a thickness of 1.5 ⁇ m to 2.5 ⁇ m, for example, 2 ⁇ m.
  • the thickness of the light-cut layer 108 may be from 0.06 ⁇ m to 0.08 ⁇ m, for example, 0.07 ⁇ m.
  • the anti-reflection structure sequentially includes a retardation film, a first alignment layer, a linear polarization plate, a second alignment layer, and a light-cut layer, when light
  • the thickness of the cut-off layer 108 is, for example, 0.07 ⁇ m
  • the thickness of both of the alignment layers is, for example, 0.1 ⁇ m
  • the thickness of the linearly polarizing plate 104 is, for example, 3 ⁇ m
  • the thickness of the retardation film 103 is, for example, 2 ⁇ m
  • the total thickness of the anti-reflection structure is 5.27.
  • the thickness is significantly reduced, and the anti-reflection structure with the structure can increase the polarization degree to 99.7%, which is advantageous for achieving ultra-thin display.
  • the light cutoff characteristics of the light cutoff layer 108 are exemplarily described below in conjunction with FIG.
  • Figure 6 shows the relationship between the degree of polarization of the anti-reflection structure and the wavelength of the incident light, wherein the abscissa indicates the wavelength of the incident light, the ordinate indicates the degree of polarization (DOP), and the line Line 1 shows the test.
  • the relationship between the degree of polarization of the anti-reflective structure and the wavelength of the incident light As can be seen from FIG.
  • the average polarization degree is only 60%, wherein 380 nm to 650 nm.
  • the average degree of polarization is close to 1, about 99.75%.
  • the degree of polarization drops sharply. It can be seen that light having a wavelength of 650 nm to 780 nm seriously affects the degree of polarization of the anti-reflection structure.
  • the light cutoff layer 108 may be configured to cut off light in the range of 650 nm to 780 nm, thereby increasing the degree of polarization.
  • the light cutoff layer 108 can be configured to turn off light of a particular wavelength range, for example, light having a cutoff wavelength in the range of 650 nm to 780 nm, preferably a cutoff wavelength in the range of 700 nm to 780 nm.
  • a particular wavelength range for example, light having a cutoff wavelength in the range of 650 nm to 780 nm, preferably a cutoff wavelength in the range of 700 nm to 780 nm.
  • the filtering effect is greatly improved, so that the anti-reflection structure with high polarization can be realized while the thickness is thinned, so that it can be well applied to the display. Achieve ultra-thin flexible display.
  • the light cutoff layer 108 may include a plurality of high refractive index layers and a plurality of low refractive index layers alternately disposed, the thickness of each of the plurality of high refractive index layers may be equal or unequal. The thickness of each of the plurality of low refractive index layers may also be equal or unequal, and the thickness of the high refractive index layer may also be equal to or not equal to the thickness of the low refractive index layer, which is not limited by the embodiment of the present invention.
  • the high refractive index layer may be a silicon nitride layer
  • the low refractive index layer may be a silicon oxide layer
  • the light cutoff layer 108 may include a plurality of layers of silicon nitride layers and a plurality of silicon oxide layers alternately disposed.
  • a silicon nitride layer and a silicon oxide layer may be alternately deposited by a plasma vapor deposition (PECVD) method, wherein the reaction gas for depositing the silicon nitride layer may be a mixed gas of SiH 4 , NH 3 , and N 2 , for example, In the mixed gas, the flow ratio of SiH 4 , NH 3 and N 2 may be 16:4:1; the reaction gas for depositing the silicon oxide layer may be a mixed gas of SiH 4 , NO 2 and N 2 , for example, in the mixed gas The flow ratio of SiH 4 , NH 3 and N 2 may be 40:4:1.
  • the thickness of the film layer can be controlled by controlling the reaction time, and the multilayer film can be alternately deposited by opening and closing the gas path of the reaction gas.
  • the silicon nitride layer and the silicon oxide layer are alternately deposited to form a light-cut layer, for example, the formed light-cut layer is formed to have a structure of 0.66H
  • 1L, wherein H represents a silicon nitride layer, L represents a silicon oxide layer, and coefficients 0.66 and 1 represent the thickness of each layer, where for the silicon nitride layer, the coefficient 1 represents 36 nm, and 0.66H represents a silicon nitride layer having a thickness of 36 ⁇ 0.66 nm 23.76 nm, and For the silicon oxide layer, the coefficient 1 represents 52 nm, and 1 L represents a silicon oxide layer having a thickness of 52 nm.
  • (1L1H) 4 indicates that silicon oxide is alternately deposited four times in a thickness of 52 nm and silicon nitride at a thickness of 36 nm.
  • the number of alternating levels may be eight, 16 or 32 times.
  • FIG. 7 is a graph showing the transmittance of an exemplary light-cutting layer obtained by simulation.
  • the light-cutting layer has 16 layers, and the silicon nitride layer and the silicon oxide layer are alternately stacked 8 times.
  • the specific structure is: 1.15H, 1.07L, 1.10H, 1.14L, 0.99H, 1.09L, 1.11H, 1.11L, 1.17H, 0.58L, 1.26H, 1.15L, 0.99H, 1.14L, 0.98H, 0.46 L, the total thickness is 717nm
  • the transmittance of the light-cut layer having such a structure is greater than 95%.
  • the retardation film according to the embodiment of the present invention may be a ⁇ /4 wave plate, and ⁇ may take an average value of visible light wavelengths, or may be set by a person skilled in the art according to actual needs, and an embodiment of the present invention This is not limited.
  • both the linear polarizing plate and the retardation film are formed using a liquid crystal material, for example, by a coating method, which is compared with a conventional anti-reflection structure for a display, and an anti-reflection structure.
  • the thickness can be significantly reduced, and further includes a light-cutting layer that cuts off light having a wavelength ranging from 650 nm to 780 nm, so that light having an adverse effect on the polarization of the anti-reflection structure is completely or partially cut off, thereby significantly enhancing the anti-reflection structure.
  • the degree of polarization for example, the degree of polarization of the anti-reflection structure can be increased from 60% to 99.7%, thereby achieving an anti-reflection structure in which the thickness is significantly reduced and the polarization is remarkably improved, which is suitable for achieving an ultra-thin flexible display.
  • This embodiment provides a method of manufacturing a display.
  • the manufacturing method includes: providing a display panel and manufacturing an anti-reflection structure, wherein the display panel includes an array substrate and a counter substrate facing each other, the array substrate comprising: a substrate substrate and a plurality of pixel units formed on the substrate An organic light emitting diode and a thin film transistor are formed in each of the plurality of pixel units, and the opposite substrate is disposed on a light emitting side of the plurality of pixel units; wherein manufacturing the antireflection structure comprises: forming an organic light emitting diode thereon A retardation film, a first alignment layer, and a linear polarization plate are formed on the base substrate or the opposite substrate of the thin film transistor, and the first alignment layer is located between the retardation film and the linear polarization plate.
  • fabricating the anti-reflection structure can include:
  • a linear polarizing plate is formed on the first alignment layer.
  • fabricating the anti-reflection structure may further include: forming a light-cut layer on the linear polarizing plate.
  • the manufacturing of the anti-reflection structure may further include:
  • the second alignment layer is subjected to rubbing orientation.
  • forming the retardation film on the substrate or the opposite substrate on which the organic light emitting diode and the thin film transistor are formed includes:
  • the second material layer is oriented and cured.
  • the method further includes: performing a rubbing orientation on the first alignment layer.
  • forming the linear polarizing plate on the first alignment layer may include: coating the first alignment layer with a first color comprising a dichroic dye, a polymerizable liquid crystal, and a photoinitiator a layer of material; oriented curing of the first layer of material.
  • the method of manufacturing the display according to the embodiment of the present invention may further include: forming thereon A planarization layer is formed on the base substrate having the organic light emitting diode and the thin film transistor, and a subsequently formed anti-reflection structure is formed on the planarization layer.
  • the anti-reflection structure formed on the opposite substrate means that the anti-reflection structure is formed on the opposite side of the opposite substrate from the array substrate. Further, since the anti-reflection structure thus formed is located outside the display panel, in order to protect the anti-reflection structure, after the anti-reflection structure is formed on the opposite side of the opposite substrate from the array substrate, the method for manufacturing the display further includes: A protective layer is formed on the linear polarizing plate. Alternatively, a protective layer may also be formed on the light cutoff layer.
  • the protective layer may be formed of a transparent insulating material, for example, a transparent resin material.
  • FIGS. 8a to 8e show cross-sectional views obtained after performing the respective steps of manufacturing the anti-reflection structure on the base substrate on which the organic light emitting diode and the thin film transistor are formed.
  • a plurality of pixel units 106 including an organic light emitting diode and a thin film transistor are formed on the base substrate 105 on which the anti-reflection structure is formed.
  • a method of manufacturing a display according to an embodiment of the present invention may include:
  • planarization layer 110 for example, using a polyimide material, forming a second alignment layer 109, and rubbing the second alignment layer 109, as shown in FIG. 8c;
  • a retardation film 102 is formed on the second alignment layer 109;
  • forming the retardation film 102 may include applying a second material layer including a polymerizable liquid crystal and a photoinitiator on the second alignment layer 109, and subjecting the second material layer to orientation curing, for example, using ultraviolet light (UV) Light) orienting the second material layer.
  • a second material layer including a polymerizable liquid crystal and a photoinitiator on the second alignment layer 109, and subjecting the second material layer to orientation curing, for example, using ultraviolet light (UV) Light) orienting the second material layer.
  • UV ultraviolet light
  • a polyimide material is used to form the first alignment layer 103, and the first alignment layer 103 is subjected to rubbing alignment;
  • a linear polarizing plate 104 is formed on the first alignment layer 103 as shown in FIG. 8d;
  • forming the linear polarizing plate 104 may include: coating a first material layer including a dichroic dye, a polymerizable liquid crystal, and a photoinitiator on the first alignment layer 103, and performing orientation curing on the second material layer, For example, the second material layer is oriented and cured using ultraviolet light (UV light).
  • UV light ultraviolet light
  • the first material layer may include a dichroic dye having a mass percentage of 1% to 20%, a polymerizable liquid crystal having a mass percentage of 75% to 95%, and a photoinitiator having a mass percentage of 0.1% to 5%.
  • the percentages of dichroic dye, polymerizable liquid crystal, and photoinitiator are 10%, 87.5%, 2.5%, respectively.
  • a light cutoff layer 108 is formed on the linear polarizing plate 104, as shown in FIG. 8e;
  • forming the light-cut layer 108 on the linear polarizing plate 104 may include alternately depositing a plurality of high refractive index layers and a plurality of low refractive index layers by plasma vapor deposition (PECVD), for example, the high refractive index layer is The silicon nitride layer, the reaction gas for depositing the silicon nitride layer is a mixed gas of SiH 4 , NH 3 and N 2 ; the low refractive index layer is a silicon oxide layer, and the reaction gas for depositing the silicon oxide layer is SiH 4 , NO 2 and A mixed gas of N 2 .
  • PECVD plasma vapor deposition
  • FIG. 10 shows a flow chart in which an anti-reflection structure is formed on a base substrate.
  • the following steps may be included:
  • Step S71 forming a planarization layer on the base substrate on which the organic light emitting diode and the thin film transistor are formed.
  • Step S72 forming a second alignment layer on the base substrate on which the planarization layer is formed, and performing rubbing alignment on the second alignment layer.
  • Step S73 coating a second material including a polymerizable liquid crystal and a photoinitiator on the second alignment layer The layer is subjected to orientation curing of the second material layer to obtain a retardation film.
  • Step S74 forming a first alignment layer on the retardation film and performing rubbing alignment on the first alignment layer.
  • Step S75 coating a first material layer including a dichroic dye, a polymerizable liquid crystal, and a photoinitiator on the first alignment layer, and subjecting the first material layer to orientation curing to form a linear polarizing plate.
  • Step S76 forming a light cutoff layer on the linear polarizing plate.
  • the substrate substrate on which the organic light emitting diode, the thin film transistor, and the anti-reflection structure are formed is formed with other required components thereon.
  • the opposite substrate is opposed to the case, thereby obtaining a display panel in which the anti-reflection structure is located between the array substrate and the opposite substrate.
  • the anti-reflection structure is formed on the opposite substrate, that is, on the side opposite to the array substrate of the opposite substrate, and a specific example is given below.
  • a flowchart of forming an anti-reflection structure on a side opposite to the array substrate of the opposite substrate may include the following steps:
  • Step S81 forming a second alignment layer on the opposite substrate and performing rubbing alignment on the second alignment layer.
  • Step S82 coating a second material layer including a polymerizable liquid crystal and a photoinitiator on the second alignment layer, and subjecting the second material layer to orientation curing to obtain a retardation film.
  • Step S83 forming a first alignment layer on the retardation film and performing rubbing alignment on the first alignment layer.
  • Step S84 coating a first material layer including a dichroic dye, a polymerizable liquid crystal, and a photoinitiator on the first alignment layer, and subjecting the first material layer to orientation curing to form a linear polarizing plate.
  • Step S85 A light-cut layer is formed on the linear polarizing plate.
  • the forming process of the light-cutting layer can be referred to the above example, and details are not described herein again.
  • Step S86 forming a protective layer on the light cutoff layer.
  • the thickness range of the first alignment layer 103, the retardation film 102, the second alignment layer 109, the light-cut layer 108, and the linear polarizer 104, and the specific formation method of the light-off layer 108 refer to the second embodiment, and no longer Narration.
  • the embodiment also provides a manufacturing method of the display, which is different from the manufacturing method of the third embodiment in that the anti-reflection structure is formed on the opposite side of the opposite substrate from the array substrate, so that after the anti-reflection structure is completed
  • the opposite substrate needs to be turned over and formed with an organic light emitting diode and
  • the substrate of the thin film transistor is obtained by a pair of substrates, wherein the anti-reflection structure is located between the array substrate and the opposite substrate, and no additional protective layer is needed to protect the anti-reflection structure, and the anti-reflection structure is directly formed on the base substrate.
  • the flat layer is not required to be formed.
  • the steps in the manufacturing method of the present embodiment can be referred to the description in the third embodiment unless otherwise specified. For brevity, details are not described herein again.
  • manufacturing the anti-reflection structure may include:
  • a retardation film is formed on the first alignment layer.
  • the method of manufacturing the display according to the present embodiment may further include: forming a second alignment layer on the opposite substrate; and performing rubbing alignment on the second alignment layer.
  • forming the linear polarizing plate on the opposite substrate may include: applying a second material layer including a dichroic dye, a polymerizable liquid crystal, and a photoinitiator on the second alignment layer; and performing orientation curing on the second material layer .
  • the manufacturing method of the display according to the embodiment may further include: performing rubbing alignment on the first alignment layer.
  • forming the retardation film on the first alignment layer may include: coating a first material layer including a polymerizable liquid crystal and a photoinitiator on the first alignment layer; and performing orientation curing on the first material layer.
  • the step of manufacturing the anti-reflection structure may further include: forming a light-cutting layer on the opposite substrate.
  • the light cutoff layer is located between the second alignment layer and the opposite substrate or between the linear polarizer and the opposite substrate.
  • FIGS. 9a to 9d An exemplary description will be given below of a method of manufacturing a display according to the present embodiment with reference to FIGS. 9a to 9d, where an opposite substrate is formed by an anti-reflection structure as an example, and FIGS. 9a to 9d are shown on an opposite substrate.
  • FIGS. 9a to 9d A cross-sectional view obtained after each step of manufacturing the anti-reflection structure, wherein the anti-reflection structure is disposed between the opposite substrate and the array substrate.
  • a light cutoff layer 108 is formed on the opposite substrate 107 as shown in Fig. 9b.
  • the light cutoff layer 108 is formed by alternately depositing a plurality of high refractive index layers and a plurality of low refractive index layers by plasma vapor deposition.
  • the high-refractive index layer is a silicon nitride layer
  • the silicon nitride layer is deposited the reactive gas is SiH 4, NH 3 and N 2 mixed gas, e.g., the mixed gas, SiH 4, NH 3 and N 2
  • the flow ratio may be 16:4:1
  • the low refractive index layer is a silicon oxide layer
  • the reaction gas for depositing the silicon oxide layer is a mixed gas of SiH 4 , NO 2 and N 2 , for example, SiH in the mixed gas 4.
  • the flow ratio of NH 3 and N 2 can be 40:4:1.
  • the linear polarizing plate 104, the first alignment layer 103, and the retardation film 102 are sequentially formed on the opposite substrate 107 on which the light-cutting layer 108 and the second alignment layer 109 are formed, as shown in Fig. 9d.
  • the exemplary steps of forming the linear polarizing plate 104, the example steps of forming the first alignment layer 103, and the example steps of forming the retardation film 102 may refer to the corresponding description of the second embodiment, and for brevity, no further details are provided herein.
  • Fig. 12 is a flow chart showing the formation of an anti-reflection structure on the opposite substrate. As shown in FIG. 12, fabricating the anti-reflection structure may include the following steps:
  • Step S91 forming a light cutoff layer on the opposite substrate.
  • Step S92 forming a second alignment layer on the opposite substrate on which the light-cut layer is formed, and performing rubbing alignment on the second alignment layer.
  • Step S93 coating a second material layer including a dichroic dye, a polymerizable liquid crystal, and a photoinitiator on the second alignment layer, and subjecting the second material layer to orientation curing to form a linear polarizing plate.
  • Step S94 forming a first alignment layer on the linear polarizing plate, and performing rubbing alignment on the first alignment layer.
  • Step S95 applying a first material layer including a polymerizable liquid crystal and a photoinitiator on the first alignment layer, and subjecting the first material layer to orientation curing to obtain a retardation film.
  • the OELD display panel may be formed on the opposite substrate before the anti-reflection structure is formed.
  • the OLED display panel is a WOLED-COA (white OLED and color filter array) mode
  • a color filter of three colors of red, green and blue is formed on the substrate.
  • a color filter may be formed first, then an anti-reflection structure may be formed, or an anti-reflection structure may be formed first, and then a color filter or the like is formed, the present invention
  • the embodiment is not limited thereto.
  • the display panel is an organic electroluminescent panel as an example, but the display panel according to the embodiment of the invention may also be a liquid crystal display panel including a backlight, and an embodiment of the present invention This is not limited.
  • the anti-reflection structure includes a retardation film made of a liquid crystal material And a linear polarizing plate, such that the retardation film, the linear polarizing plate, and the alignment layer can be formed by a method such as coating, and thus, according to the present invention, compared with the conventional anti-reflection structure provided by attaching to the outside of the display panel,
  • the anti-reflection structure of the example has a significantly reduced thickness, so that the display using the anti-reflection structure can achieve ultra-thin display.
  • the light-cut layer is further provided, and the light-cut layer is configured to cut off light which is disadvantageous to the improvement of the degree of polarization
  • the display using the anti-reflection structure in this way effectively reduces the contrast of the internal light to the external light, thereby significantly improving the contrast of the image display, and at the same time increasing the degree of polarization while significantly reducing the thickness.

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Abstract

一种减反射结构(101)及其制造方法、显示器及其制造方法。该减反射结构(101)包括：延迟膜(102)，线偏振片(104)，以及至少一个取向层(103)，构造为对所述延迟膜(102)以及所述线偏振膜(104)取向，其中，所述延迟膜(102)和所述线偏振片(104)包括液晶。该减反射结构(101)具有超薄的厚度且对入射的环境光有很好的防反效果，从而采用该减反射结构(101)的显示器能够实现超薄显示。

Description

减反射结构及其制造方法、显示器及其制造方法 技术领域
本发明的实施例涉及一种减反射结构及其制造方法、显示器及其制造方法。
背景技术
柔性显示由于具有厚度薄，重量轻，可弯折甚至可卷曲等等众多优点，已经成为显示技术的主要趋势之一，未来市场前景广阔。
对于柔性显示器，为了减少内部金属配线等对外部光的反射，一般采用贴附在显示面板外部的偏振器作为减反射结构，但是这样的减反射结构厚度很大，例如，一般常用的偏光片的厚度在100-150μm之间，而延迟膜的厚度为20-100μm，这样二者所构成的减反射结构的总厚度在120-250μm之间。显然，采用该结构会使得柔性显示器厚度变得很大，从而使得柔性显示器变得厚重，丧失了轻薄的特点，不适于柔性显示。
因此，迫切需要一种具有较薄厚度且能够实现轻薄柔性显示的减反射结构。
发明内容
本发明的至少一实施例提供一种减反射结构及其制造方法、显示器及其制造方法，该减反射结构具有较小的厚度，包含该减反射结构的显示器不仅能够实现轻薄柔性显示，进一步地，还能够保证较高的偏光度。
本发明至少一个实施例提供一种减反射结构，包括：延迟膜，线偏振片，以及至少一个取向层，构造为对所述延迟膜以及所述线偏振膜取向，其中，所述延迟膜和所述线偏振片包括液晶。
本发明至少一个实施例还提供一种显示器，包括：显示面板以及如上所述的减反射结构，其中，所述显示面板包括阵列基板和与所述阵列基板相对设置的对置基板，其中，所述减反射结构设置在所述阵列基板与所述对置基板之间；或者所述减反射结构位于所述对置基板的与所述阵列基板相反的一 侧。
本发明至少一个实施例还提供一种显示器的制造方法，包括：提供显示面板，所述显示面板包括彼此对置的阵列基板以及对置基板，所述阵列基板包括：衬底基板；以及多个像素单元，形成在所述衬底基板上且所述多个像素单元的每个中形成有有机发光二极管和薄膜晶体管，其中所述多个像素单元位于所述对置基板设置与所述衬底基板之间；制造减反射结构，包括：在其上形成有所述有机发光二极管和薄膜晶体管的衬底基板或者所述对置基板上形成延迟膜、第一取向层和线偏振片；其中所述第一取向层位于所述延迟膜与所述线偏振片之间，所述延迟膜和所述线偏振片包括液晶。
本发明的至少一个实施例还提供一种减反射结构的制造方法，包括：准备基板；在所述基板上形成延迟膜、第一取向层和线偏振片，其中所述第一取向层位于所述延迟膜与所述线偏振片之间，所述延迟膜和所述线偏振片包括液晶。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1a和图1b分别为根据本发明实施例的减反射结构的两种示例性结构示意图；
图2为根据本发明实施例的包括减反射结构的显示器的结构示意图；
图3为根据本发明实施例的减反射结构设置在显示面板内的显示器的结构示意图；
图4a为根据本发明实施例的减反射结构设置在在衬底基板上的显示器的结构示意图；
图4b为根据本发明实施例的减反射结构设置在对置基板上的显示器的结构示意图；
图4c为根据本发明实施例的减反射结构设置在衬底基板上的显示器的另一结构示意图；
图4d为根据本发明实施例的减反射结构设置在对置基板上的显示器的 另一结构示意图；
图4e为根据本发明实施例的减反射结构设置在衬底基板上的显示器的再一结构示意图；
图5为根据本发明实施例的显示器的截面结构图；
图6为减反射结构的偏光度与入射光波长的关系示意图；
图7为根据本发明实施例的光截止层的透过率的曲线图；
图8a到图8e为根据本发明实施例的制造方法中执行制造减反射结构的各步骤后所获得的结构截面图；
图9a到图9d为根据本发明实施例的制造方法中在对置基板上执行制造减反射结构的各步骤后所获得的结构截面图；
图10为根据本发明实施例的制造方法中在衬底基板上形成减反射结构的流程图；
图11为根据本发明实施例的制造方法中在对置基板上形成减反射结构的流程图，其中，减反结构设置在该对置基板的与阵列基板相反的一侧；以及
图12为根据本发明实施例的制造方法中在对置基板上形成减反射结构的流程图，其中，减反结构设置在该对置基板与阵列基板之间。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
除非另外定义，此处使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”、“一”或者“该”等类似词语也不表示数量限制，而是表示存在至少一个。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排 除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
本发明的至少一个实施例提供了一种减反射结构及其制造方法、显示器以及制造该显示器的方法。该减反射结构顺次包括：延迟膜；第一取向层，设置在该延迟膜的出光侧；以及线偏振片，设置在该第一取向层的出光侧；其中，所述延迟膜和所述线偏振片包括液晶。相对于现有的贴附在柔性显示面板外部的减反射结构，根据本发明实施例的减反射结构具有显著减小的厚度，从而采用该减反射结构的显示器能够实现超薄显示。进一步地，在本发明的实施例中，为了在减薄减反射结构的同时，获得较高的偏光度，根据本发明实施例的减反射结构还提供有光截止层，构造为截止不利于偏光度提高的光，从而在减小厚度的同时，获得较高的偏光度。
以下将结合附图对本发明实施例提供的减反射结构及其制造方法、显示器以及制造该显示器的方法进行详细说明，以使得本发明的技术方案更加清楚。
实施例一
本实施例提供一种减反射结构。如图1a所示，为减反射结构的结构示意图，该减反射结构101顺次包括：延迟膜102、第一取向层103和线偏振片104。第一取向层103设置在延迟膜102的出光侧；线偏振片104设置在第一取向层103的出光侧，其中，该延迟膜和该线偏振片包括液晶。
需要说明的是，在这里出光侧是相对于显示光而言的，出光侧指的是位于显示光的出光方向上的一侧，而相应的以下描述中的入光侧指的是位于显示光的来光方向上的一侧，如图1所示，L1标注了显示光的出光方向。
示例性地，该延迟膜和该线偏振片中包括的液晶可以为可聚合液晶，线偏振片104可以包括二向色性染料、可聚合液晶和光引发剂，延迟膜102可以包括可聚合液晶和光引发剂。其中，二向色性染料可为X11(BASF)或S-428；可聚合液晶可为LC242(merck)等普通向列相液晶，光引发剂可为184。
示例性地，线偏振片104可以包括质量百分比为1％-20％的二向色性染 料、质量百分比为75％-95％的可聚合液晶和质量百分比为0.1％-5％的光引发剂。备选地，二向色性染料、可聚合液晶和光引发剂的百分含量分别为10％、87.5％和2.5％。
示例性地，延迟膜102可以包括重量百分比为75％-99.5％的可聚合液晶和重量百分比为0.5％-25％的光引发剂。
示例性地，为了使得包括液晶材料的线偏振片104能够使得一个方向的偏振光透过而使得与之垂直方向的偏振光被吸收，在形成过程中需要被取向，且包括液晶材料的延迟膜102在形成过程中也需要被取向。备选地，线偏振片104和延迟膜102可以共用位于二者之间的第一取向层103而配向；或者，线偏振片104和延迟膜102可以分别利用不同的取向层而配向。
示例性地，第一取向层103可以构造为对延迟膜102进行取向，此时减反射结构还可以包括第二取向层109，该第二取向层109设置在线偏振片104的出光侧，且该第二取向层109构造为对线偏振片104进行取向。备选地，第一取向层103也可构造为对线偏振片104进行取向，此时减反射结构101可以包括第三取向层130，第三取向层130设置在延迟膜102的入光侧且构造为对延迟膜102进行取向。
在本实施例中，减反射结构的线偏振片和延迟膜都采用液晶材料，例如采用涂敷方法而形成，这样与传统的用于显示器的减反射结构相比，根据本发明实施例的减反射结构的厚度可以被显著减小，例如，厚度可以减小到约10μm，甚至远小于10μm，例如，下面的示例中给出的5.27μm。然而，对于以上减反射结构，其偏光度可能较低，例如，为60％。
备选地，根据本发明实施例的减反射结构还可以包括光截止层，该光截止层设置在线偏振片的出光侧且构造为截止特定波长范围的光。备选地，光截止层108还可以设置在第二取向层109的出光侧。
示例性地，第一取向层103、第二取向层109、第三取向层130的厚度可分别在0.05μm～0.15μm的厚度范围内，例如，可以都为0.1μm。
示例性地，线偏振片104的厚度可为2.5μm～3.5μm，例如，为3μm。
示例性地，延迟膜102的厚度可为1.5μm～2.5μm，例如，为2μm。
示例性地，光截止层108的厚度可为0.06μm～0.08μm，例如，为0.07μm。
示例性地，对于根据本发明实施例的减反射结构的一个示例，例如，该 减反射结构顺次包括延迟膜、第一取向层、线偏振片、第二取向层以及光截止层，当光截止层108的厚度例如为0.07μm，两个取向层的厚度例如都为0.1μm，线偏振片104的厚度例如为3μm，延迟膜103的厚度例如为2μm时，减反射结构的总厚度为5.27μm，小于10μm，而与厚度大约为120-250μm的现有减反射结构相比，厚度显著减小，而且具有该结构的减反射结构，其偏光度能够提升到99.7％，而利于实现超薄显示。
示例性地，光截止层108可构造为截止特定波长范围的光，例如，截止波长范围为650nm～780nm的光，优选地，截止波长范围为700nm～780nm的光，这样可以仅截止部分的红外光，而并非截止全部红外光，从而可以大大提高偏光度，又不会影响显示。
这样，通过提供光截止层108，其滤光作用使得偏光度得到很大的提升，从而可以在厚度减薄的同时，实现具有高偏光度的减反射结构，从而能很好的应用于显示器，实现超薄柔性显示。
示例性地，根据本发明实施例的光截止层108可以包括交替设置的多个高折射率层和多个低折射率层，该多个高折射率层的每层的厚度可以相等或不相等，该多个低折射率层的每层的厚度也可以相等或不相等，高折射率层的厚度也可以等于或不等于低折射率层的厚度，本发明的实施例并不对此进行限定。
例如，该高折射率层可以为氮化硅层，该低折射率层可以为氧化硅层，也就是，光截止层108可以包括交替设置的多层氮化硅层和多层氧化硅层。例如，可以采用等离子体气相沉积(PECVD)的方法交替沉积氮化硅层和氧化硅层，其中沉积氮化硅层的反应气体可为SiH4、NH3和N2的混合气体，例如，该混合气体中，SiH4、NH3和N2的流量比可为16∶4∶1；沉积氧化硅层的反应气体可为SiH4、NO2和N2的混合气体，例如，该混合气体中，SiH4、NH3和N2的流量比可为40∶4∶1。在实际中，可通过控制反应时间来控制膜层的厚度，通过反应气体气路的打开和关闭来实现多层膜交替沉积。
这里应该注意的是，根据本发明实施例的延迟膜可以为λ/4波片，λ可以取可见光波长的平均值，或者本领域的技术人员可以根据实际需要而设定，本发明的实施例对此不进行限定。
对于根据本发明实施例的减反射结构，线偏振片和延迟膜都采用液晶材 料形成，例如可以采用涂敷方法而形成，这样与传统的用于显示器的减反射结构相比，减反射结构的厚度可以被显著减小，而且进一步包括截止波长范围为650nm～780nm的光的光截止层，使得对减反射结构的偏光度具有不利影响的光全部或者部分被截止，从而能够显著提升减反射结构的偏光度，例如，减反射结构的偏光度可以从60％提升到99.7％，由此实现厚度显著减薄而偏光度显著提升的减反射结构，适用于实现超薄柔性显示。
实施例二
本实施例提供另一种减反射结构。如图1b所示，为减反射结构的结构示意图，该减反射结构101顺次包括：第一取向层103、延迟膜102、线偏振片104和第二取向层109。第一取向层103设置在延迟膜102的入光侧；线偏振片104设置在延迟膜102的出光侧，其中，该延迟膜和该线偏振片包括液晶。
需要说明的是，在这里出光侧是相对于显示光而言的，出光侧指的是位于显示光的出光方向上的一侧，而相应的以下描述中的入光侧指的是位于显示光的来光方向上的一侧，如图1所示，L1标注了显示光的出光方向。
示例性地，该延迟膜和该线偏振片中包括的液晶可以为可聚合液晶，线偏振片104可以包括二向色性染料、可聚合液晶和光引发剂，延迟膜102可以包括可聚合液晶和光引发剂。其中，二向色性染料可为X11(BASF)或S-428；可聚合液晶可为LC242(merck)等普通向列相液晶，光引发剂可为184。
示例性地，线偏振片104可以包括质量百分比为1％-20％的二向色性染料、质量百分比为75％-95％的可聚合液晶和质量百分比为0.1％-5％的光引发剂。备选地，二向色性染料、可聚合液晶和光引发剂的百分含量分别为10％、87.5％和2.5％。
示例性地，延迟膜102可以包括重量百分比为75％-99.5％的可聚合液晶和重量百分比为0.5％-25％的光引发剂。
备选地，根据本发明实施例的减反射结构还可以包括光截止层，该光截止层设置在线偏振片的出光侧且构造为截止特定波长范围的光。备选地，光截止层108还可以设置在第二取向层109的出光侧。
示例性地，第一取向层103、第二取向层109的厚度可分别在0.05μm～0.15μm的厚度范围内，例如，可以都为0.1μm。
示例性地，线偏振片104的厚度可为2.5μm～3.5μm，例如，为3μm。
示例性地，延迟膜102的厚度可为1.5μm～2.5μm，例如，为2μm。
示例性地，光截止层108的厚度可为0.06μm～0.08μm，例如，为0.07μm。
示例性地，光截止层108可构造为截止特定波长范围的光，例如，截止波长范围为650nm～780nm的光，优选地，截止波长范围为700nm～780nm的光，这样可以仅截止部分的红外光，而并非截止全部红外光，从而可以大大提高偏光度，又不会影响显示。
这样，通过提供光截止层108，其滤光作用使得偏光度得到很大的提升，从而可以在厚度减薄的同时，实现具有高偏光度的减反射结构，从而能很好的应用于显示器，实现超薄柔性显示。
示例性地，根据本发明实施例的光截止层108可以包括交替设置的多个高折射率层和多个低折射率层，该多个高折射率层的每层的厚度可以相等或不相等，该多个低折射率层的每层的厚度也可以相等或不相等，高折射率层的厚度也可以等于或不等于低折射率层的厚度，本发明的实施例并不对此进行限定。
例如，该高折射率层可以为氮化硅层，该低折射率层可以为氧化硅层，也就是，光截止层108可以包括交替设置的多层氮化硅层和多层氧化硅层。例如，可以采用等离子体气相沉积(PECVD)的方法交替沉积氮化硅层和氧化硅层，其中沉积氮化硅层的反应气体可为SiH4、NH3和N2的混合气体，例如，该混合气体中，SiH4、NH3和N2的流量比可为16∶4∶1；沉积氧化硅层的反应气体可为SiH4、NO2和N2的混合气体，例如，该混合气体中，SiH4、NH3和N2的流量比可为40∶4∶1。在实际中，可通过控制反应时间来控制膜层的厚度，通过反应气体气路的打开和关闭来实现多层膜交替沉积。
这里应该注意的是，根据本发明实施例的延迟膜可以为λ/4波片，λ可以取可见光波长的平均值，或者本领域的技术人员可以根据实际需要而设定，本发明的实施例对此不进行限定。
对于根据本发明实施例的减反射结构，线偏振片和延迟膜都采用液晶材料形成，例如可以采用涂敷方法而形成，这样与传统的用于显示器的减反射结构相比，减反射结构的厚度可以被显著减小，而且进一步包括截止波长范围为650nm～780nm的光的光截止层，使得对减反射结构的偏光度具有不利 影响的光全部或者部分被截止，从而能够显著提升减反射结构的偏光度，例如，减反射结构的偏光度可以从60％提升到99.7％，由此实现厚度显著减薄而偏光度显著提升的减反射结构，适用于实现超薄柔性显示。
实施例三
本实施例提供一种制造如实施例一和实施例二所述的减反射结构的制造方法，下面以制造实施例一的减反射结构为例对根据本发明实施例的减反射结构的制造方法进行描述。
示例性地，根据本实施例的减反射结构的制造方法，包括：
准备基板；
在基板上形成延迟膜、第一取向层和线偏振片，
其中第一取向层位于延迟膜与线偏振片之间，延迟膜和线偏振片包括液晶。
备选地，在根据本实施例的减反射结构的制造方法中，在基板上形成延迟膜、第一取向层和线偏振片可以包括：在基板上形成延迟膜；在延迟膜上形成第一取向层；以及在第一取向层上形成线偏振片。
备选地，在根据本实施例的减反射结构的制造方法中，在基板上形成延迟膜、第一取向层和线偏振片包括：在基板上形成线偏振片；在线偏振片上形成第一取向层；以及在第一取向层上形成延迟膜。
进一步地，以上形成延迟膜、取向层、线偏振片的示例性步骤可以参考下面的实施例四中显示器的制造方法，这里将不进行赘述。
本领域的技术人员应该注意的是，这里描述的各个部件的制造方法也同样适应于实施例二所述的减反射结构的制造，只不过需要改变各个步骤的执行顺序，为了简便，这里将省略其具体描述。
实施例三
本实施例提供一种显示器。如图2所示，为具有减反射结构的显示器的结构示意图，该显示器包括：显示面板100和减反射结构101，其中该减反射结构101顺次包括：延迟膜102、第一取向层103和线偏振片104。第一取向层103设置在延迟膜102的出光侧；线偏振片104设置在第一取向层103的出光侧。图2中示出的示例中减反射结构101设置在该显示面板100的出光侧，但除图2示出的示例之外，该减反射结构101还可以设置在显示面板 100的内部。
需要说明的是，在这里出光侧是相对于显示光而言的，出光侧指的是位于显示光的出光方向上的一侧，而相应的以下描述中的入光侧指的是位于显示光的来光方向上的一侧，如图2所示，L1标注了显示光的出光方向。
例如，如图3所示，示出了根据本发明实施例的减反射结构设置在显示面板内的显示器，该显示器中的显示面板100包括：阵列基板111和对置基板107，其中，阵列基板111包括：衬底基板105和多个像素单元106。多个像素单元106形成在该衬底基板105上且该多个像素单元106的每个中形成有有机发光二极管和薄膜晶体管；对置基板107，在该多个像素单元106的出光侧与阵列基板111对盒，其中该减反射结构101设置在该阵列基板111与该对置基板107之间。在图3中，该减反射结构101设置在对置基板107和阵列基板111之间；备选地，该减反射结构101还可以设置在对置基板的与阵列基板相反的一侧。
例如，如图4a所示，减反射结构101设置在对置基板107和阵列基板111之间，多个像素单元106形成在衬底基板105上，且多个像素单元106的每个中形成有有机发光二极管和薄膜晶体管，在形成有多个像素单元106的衬底基板上形成减反射结构101。备选地，在减反射结构101和形成有有机发光二极管和薄膜晶体管的衬底基板105之间还可以形成有平坦化层110，该平坦化层110可利用发明人已知的材料而采用反刻法、玻璃回流法、旋涂玻璃法、化学机械平坦化法等形成。
示例性地，如图4b所示，减反射结构101还可以设置在对置基板107与阵列基板111相反的一侧，其中多个像素单元106形成在衬底基板105上，且该多个像素单元106的每个中形成有有机发光二极管和薄膜晶体管，该减反射结构101还可以包括在线偏振片104的出光侧的保护层120，构造为保护减反射结构101，例如，保护层120可以由透光绝缘材料形成。
示例性地，线偏振片104可以包括二向色性染料、可聚合液晶和光引发剂，延迟膜102可以包括可聚合液晶和光引发剂。其中，二向色性染料可为X11(BASF)或S-428；可聚合液晶可为LC242(merck)等普通向列相液晶，光引发剂可为184。
示例性地，线偏振片104可以包括质量百分比为1％-20％的二向色性染 料、质量百分比为75％-95％的可聚合液晶和质量百分比为0.1％-5％的光引发剂。备选地，二向色性染料、可聚合液晶和光引发剂的百分含量分别为10％、87.5％和2.5％。
示例性地，延迟膜102可以包括重量百分比为75％-99.5％的可聚合液晶和重量百分比为0.5％-25％的光引发剂。
示例性地，为了使得包括液晶材料的线偏振片104能够使得一个方向的偏振光透过而使得与之垂直方向的偏振光被吸收，在形成过程中需要被取向，且包括液晶材料的延迟膜102在形成过程中也需要被取向。备选地，线偏振片104和延迟膜102可以共用位于二者之间的第一取向层103而配向；或者，线偏振片104和延迟膜102可以分别利用不同的取向层而配向。
示例性地，第一取向层103可以构造为对延迟膜102进行取向，此时减反射结构还可以包括第二取向层109，该第二取向层109设置在线偏振片104的出光侧，且该第二取向层109构造为对线偏振片104进行取向。如图4c所示，对应于图4a所示的显示器的结构，第二取向层109可以设置在对置基板107与线偏振片104之间；备选地，如图4d所示，与图4b所示的显示器相对应，第二取向层109可以设置在保护层120与线偏振片104之间。
备选地，第一取向层103也可构造为对线偏振片104进行取向，此时减反射结构101可以包括第三取向层130，第三取向层130设置在延迟膜102的入光侧且构造为对延迟膜102进行取向。例如，对应于减反射结构101形成在对置基板和阵列基板之间的实施方式，第三取向层130设置在形成有有机发光二极管和薄膜晶体管的衬底基板上的平坦层110与延迟膜102之间，如图4e所示。备选地，对应于减反射结构101设置在对置基板与阵列基板相反的一侧的实施方式，第三取向层形成在对置基板与延迟膜102之间。
在本实施例中，减反射结构的线偏振片和延迟膜都采用液晶材料，例如采用涂敷方法而形成，这样与传统的用于显示器的减反射结构相比，根据本发明实施例的减反射结构的厚度可以被显著减小，例如，厚度可以减小到约10μm，甚至远小于10μm，例如，下面的示例中给出的5.27μm。然而，对于以上减反射结构，其偏光度可能较低，例如，为60％。
备选地，为了提高以上显示器的偏光度，根据本发明实施例的减反射结构还可以包括光截止层，该光截止层设置在线偏振片的出光侧且构造为截止 特定波长范围的光。例如，如图5所示，对应于图4a所示的显示器，在平坦化层110上顺次设置延迟膜102、第一取向层103和线偏振片104，在线偏振片104的出光侧形成光截止层108。备选地，对应于图4c和图4d所示的显示器结构，光截止层108可以设置在第二取向层109的出光侧。
示例性地，第一取向层103、第二取向层109、第三取向层130的厚度可分别在0.05μm～0.15μm的厚度范围内，例如，可以都为0.1μm。
示例性地，线偏振片104的厚度可为2.5μm～3.5μm，例如，为3μm。
示例性地，延迟膜102的厚度可为1.5μm～2.5μm，例如，为2μm。
示例性地，光截止层108的厚度可为0.06μm～0.08μm，例如，为0.07μm。
示例性地，对于根据本发明实施例的减反射结构的一个示例，例如，该减反射结构顺次包括延迟膜、第一取向层、线偏振片、第二取向层以及光截止层，当光截止层108的厚度例如为0.07μm，两个取向层的厚度例如都为0.1μm，线偏振片104的厚度例如为3μm，延迟膜103的厚度例如为2μm时，减反射结构的总厚度为5.27μm，小于10μm，而与厚度大约为120-250μm的现有减反射结构相比，厚度显著减小，而且具有该结构的减反射结构，其偏光度能够提升到99.7％，而利于实现超薄显示。
下面结合图6对光截止层108的光截止特性进行示例性描述。
图6所示，示出了减反射结构的偏光度与入射光波长之间的关系，其中横坐标表示入射光波长，纵坐标表示偏光度(DOP)，线Line 1示出了通过测试得到的现有的贴附到显示面板外部的量产减反射结构的偏光度与入射光波长之间的关系，而线Line 2示出了通过测试得到的根据本发明实施例的未包括光截止层的减反射结构的偏光度与入射光波长之间的关系。从图6可以看出，对于根据本发明实施例的未包括光截止层的减反射结构，当入射光的波长范围为380nm～780nm时，平均偏光度仅为60％，其中在380nm～650nm时，平均偏光度接近1，大约为99.75％，而入射光的波长大于650nm时，偏光度急剧下降，由此可知，波长为650nm～780nm的光严重地影响了减反射结构的偏光度，因此，根据本发明实施例的光截止层108可以构造为截止650nm～780nm范围内的光，从而提高偏光度。
示例性地，光截止层108可构造为截止特定波长范围的光，例如，截止波长范围为650nm～780nm的光，优选地，截止波长范围为700nm～780nm的 光，这样可以仅截止部分的红外光，而并非截止全部红外光，从而可以大大提高偏光度，又不会影响显示。
这样，通过提供光截止层108，其滤光作用使得偏光度得到很大的提升，从而可以在厚度减薄的同时，实现具有高偏光度的减反射结构，从而能很好的应用于显示器，实现超薄柔性显示。
示例性地，根据本发明实施例的光截止层108可以包括交替设置的多个高折射率层和多个低折射率层，该多个高折射率层的每层的厚度可以相等或不相等，该多个低折射率层的每层的厚度也可以相等或不相等，高折射率层的厚度也可以等于或不等于低折射率层的厚度，本发明的实施例并不对此进行限定。
例如，该高折射率层可以为氮化硅层，该低折射率层可以为氧化硅层，也就是，光截止层108可以包括交替设置的多层氮化硅层和多层氧化硅层。例如，可以采用等离子体气相沉积(PECVD)的方法交替沉积氮化硅层和氧化硅层，其中沉积氮化硅层的反应气体可为SiH4、NH3和N2的混合气体，例如，该混合气体中，SiH4、NH3和N2的流量比可为16：4：1；沉积氧化硅层的反应气体可为SiH4、NO2和N2的混合气体，例如，该混合气体中，SiH4、NH3和N2的流量比可为40：4：1。在实际中，可通过控制反应时间来控制膜层的厚度，通过反应气体气路的打开和关闭来实现多层膜交替沉积。
下面给出光截止层的具体示例。这里，交替沉积氮化硅层和氧化硅层而形成光截止层，例如，所形成的光截止层形成为具有0.66H|(1L1H)4|1L的结构，其中，H表示氮化硅层，L表示氧化硅层，而系数0.66和1表示每层的厚度，这里对于氮化硅层，系数1代表36nm，则0.66H表示厚度为36×0.66nm＝23.76nm的氮化硅层，而对于氧化硅层，系数1代表52nm，则1L表示厚度为52nm的氧化硅层。例如，(1L1H)4表示氧化硅以52nm的厚度和氮化硅以36nm的厚度依次交替沉积4次，例如，交替层级的次数还可为8次、16次、32次等。
图7给出了通过模拟得到的示例性光截止层的透过率曲线图，如图7所示，该光截止层具有16层膜层，氮化硅层和氧化硅层交替层叠8次，具体结构为：1.15H，1.07L，1.10H，1.14L，0.99H，1.09L，1.11H，1.11L，1.17H，0.58L，1.26H，1.15L，0.99H，1.14L，0.98H，0.46L，构成总厚度为717nm 的光截止层，由图可见，对于波长为380nm～700nm，例如，380nm～650nm的光，具有这种结构的光截止层的透过率大于95％。
这里应该注意的是，根据本发明实施例的延迟膜可以为λ/4波片，λ可以取可见光波长的平均值，或者本领域的技术人员可以根据实际需要而设定，本发明的实施例对此不进行限定。
对于根据本发明实施例的减反射结构，线偏振片和延迟膜都采用液晶材料形成，例如可以采用涂敷方法而形成，这样与传统的用于显示器的减反射结构相比，减反射结构的厚度可以被显著减小，而且进一步包括截止波长范围为650nm～780nm的光的光截止层，使得对减反射结构的偏光度具有不利影响的光全部或者部分被截止，从而能够显著提升减反射结构的偏光度，例如，减反射结构的偏光度可以从60％提升到99.7％，由此实现厚度显著减薄而偏光度显著提升的减反射结构，适用于实现超薄柔性显示。
实施例四
本实施例提供一种显示器的制造方法。该制造方法包括：提供显示面板以及制造减反射结构，其中该显示面板包括彼此对盒的阵列基板以及对置基板，该阵列基板包括：衬底基板以及多个像素单元，形成在该衬底基板上且多个像素单元的每个中形成有有机发光二极管和薄膜晶体管，该对置基板设置在该多个像素单元的出光侧；其中制造减反射结构包括：在其上形成有有机发光二极管和薄膜晶体管的衬底基板或者对置基板上形成延迟膜、第一取向层和线偏振片，第一取向层位于延迟膜与线偏振片之间。
示例性地，制造减反射结构可以包括：
在其上形成有有机发光二极管和薄膜晶体管的衬底基板或对置基板上形成延迟膜；
在延迟膜上形成第一取向层；以及
在第一取向层上形成线偏振片。
进一步地，制造减反射结构还可以包括：在线偏振片上形成光截止层。
示例性地，在其上形成有有机发光二极管和薄膜晶体管的衬底基板或对置基板上形成延迟膜之前，根据本发明实施例的显示器的制造方法中，制造减反射结构还可以包括：
在其上形成有有机发光二极管和薄膜晶体管的衬底基板或对置基板上形 成第二取向层；以及
对第二取向层进行摩擦取向。
可选地，在其上形成有有机发光二极管和薄膜晶体管的衬底基板上或对置基板上形成延迟膜包括：
在第二取向层上涂敷包括可聚合液晶和光引发剂的第二材料层；
对第二材料层进行取向固化。
可选地，在制造减反射结构的过程中，在延迟膜上形成第一取向层之后，还可以包括：对第一取向层进行摩擦取向。
根据本发明实施例，在制造减反射结构时，在第一取向层上形成线偏振片可以包括：在第一取向层上涂敷包括二向色性染料、可聚合液晶和光引发剂的第一材料层；对第一材料层进行取向固化。
进一步地，当减反射结构形成在其上形成有有机发光二极管和薄膜晶体管的衬底基板时，在制造减反射结构之前，根据本发明实施例的显示器的制造方法还可以包括：在其上形成有所述有机发光二极管和所述薄膜晶体管的衬底基板上形成平坦化层，而后续形成的减反射结构形成在平坦化层上。
在本实施例中，减反射结构形成在对置基板指的是减反射结构形成在对置基板的与所述阵列基板相反的一侧。进一步地，由于这样形成的减反射结构位于显示面板外部，为了对其进行保护，在减反射结构形成在对置基板的与所述阵列基板相反的一侧之后，该显示器的制造方法还包括：在线偏振片上形成保护层。备选地，还可以在光截止层上形成保护层。
示例性地，该保护层可以由透明绝缘材料形成，例如，由透明树脂材料形成。
以下参照图8a～8e对根据本实施例的显示器的制造方法给出了示例性描述，这里，以减反射结构形成在其上形成有有机发光二极管和薄膜晶体管的衬底基板上作为示例，图8a～8e示出了在其上形成有有机发光二极管和薄膜晶体管的衬底基板上执行制造减反射结构的各步骤后所获得的截面图。
如图8a所示，减反射结构即将形成在其上的衬底基板105上形成有包括有机发光二极管和薄膜晶体管的多个像素单元106。
接下来，根据本发明实施例的显示器的制造方法可以包括：
在其上形成有有机发光二极管和薄膜晶体管的衬底基板105上形成平坦 化层110，如图8b所示；
接着，在平坦化层110上，例如，采用聚酰亚胺材料，形成第二取向层109，对该第二取向层109进行摩擦取向，如图8c所示；
接着，在第二取向层109上形成延迟膜102；
示例性地，形成延迟膜102可以包括：在第二取向层109上涂敷包括可聚合液晶和光引发剂的第二材料层，对该第二材料层进行取向固化，例如，采用紫外光(UV光)对所述第二材料层进行取向固化。
接着，在延迟膜102上，例如，采用聚酰亚胺材料，形成第一取向层103，对第一取向层103进行摩擦取向；
然后，在第一取向层103上形成线偏振片104，如图8d所示；
示例性地，形成线偏振片104可以包括：在第一取向层103上涂敷包括二向色性染料、可聚合液晶和光引发剂的第一材料层，对该第二材料层进行取向固化，例如，采用紫外光(UV光)对所述第二材料层进行取向固化。
例如，第一材料层可以包括质量百分比为1％-20％的二向色性染料、质量百分比为75％-95％的可聚合液晶和质量百分比为0.1％-5％的光引发剂。备选地，二向色性染料、可聚合液晶和光引发剂的百分含量分别为10％，87.5％，2.5％。
然后，在线偏振片104上形成光截止层108，如图8e所示；
示例性地，在线偏振片104上形成光截止层108，可以包括采用等离子体气相沉积法(PECVD)交替沉积多个高折射率层和多个低折射率层，例如，该高折射率层为氮化硅层，沉积氮化硅层的反应气体为SiH4、NH3和N2的混合气体；该低折射率层为氧化硅层，沉积氧化硅层的反应气体为SiH4、NO2和N2的混合气体。
对应于图8a～8e示出的具体示例，图10示出了在衬底基板上形成减反射结构的流程图。例如，在衬底基板上形成减反射结构时，可以包括如下步骤：
步骤S71：在形成有有机发光二极管和薄膜晶体管的衬底基板上形成平坦化层。
步骤S72：在形成有平坦化层的衬底基板上形成第二取向层，并对第二取向层进行摩擦取向。
步骤S73：在第二取向层上涂敷包括可聚合液晶和光引发剂的第二材料 层，对第二材料层进行取向固化，得到延迟膜。
步骤S74：在延迟膜上形成第一取向层，对第一取向层进行摩擦取向。
步骤S75：在第一取向层上涂敷包括二向色性染料、可聚合液晶和光引发剂的第一材料层，对第一材料层进行取向固化形成线偏振片。
步骤S76：在线偏振片上形成光截止层。
需要说明的是，对于以上示例，减反射结构形成在所述衬底基板上之后，将其上形成有有机发光二极管、薄膜晶体管和减反射结构的衬底基板与其上形成有其他所需部件的对置基板对盒，从而获得减反射结构位于阵列基板与对置基板之间的显示面板。
示例性地，该减反射结构形成在对置基板上，也就是，形成在对置基板的与阵列基板相反的一侧，下面给出了具体示例。
如图11所示，是在对置基板的与阵列基板相反的一侧形成减反射结构的流程图，可以包括如下步骤：
步骤S81：在对置基板上形成第二取向层，并对第二取向层进行摩擦取向。
步骤S82：在第二取向层上涂敷包括可聚合液晶和光引发剂的第二材料层，对第二材料层进行取向固化，得到延迟膜。
步骤S83：在延迟膜上形成第一取向层，对第一取向层进行摩擦取向。
步骤S84：在第一取向层上涂敷包括二向色性染料、可聚合液晶和光引发剂的第一材料层，对第一材料层进行取向固化形成线偏振片。
步骤S85：在线偏振片上形成光截止层，该光截止层的形成过程可以参见以上示例，在此不再赘述。
步骤S86：在光截止层上形成保护层。
示例性地，第一取向层103、延迟膜102、第二取向层109、光截止层108、线偏光片104的厚度范围，光截止层108的具体形成方法参见实施例二，在此不再赘述。
实施例五
本实施例也提供一种显示器的制造方法，与实施例三的制造方法的区别在于：减反射结构在对置基板的与阵列基板相对的一侧上形成，这样，在制作完成减反射结构后，对置基板需要翻转而与其上形成有有机发光二极管和 薄膜晶体管的衬底基板对盒而得到显示器，其中该减反结构位于阵列基板与对置基板之间，不需要额外的保护层来保护减反射结构，且与减反射结构直接形成在衬底基板上相比，也不需要形成平坦层，除了上述区别之外，如果没有特别说明，本实施例的制造方法中的步骤可以参照实施例三中的描述，为了简洁，这里将不再赘述。
示例性地，在本实施例中，制造减反射结构可以包括：
在对置基板上形成线偏振片；
在线偏振片上形成第一取向层；以及
在第一取向层上形成延迟膜。
示例性地，在对置基板上形成线偏振片之前，根据本实施例的显示器的制造方法还可以包括：在对置基板上形成第二取向层；对第二取向层进行摩擦取向。
相应地，在对置基板上形成线偏振片可以包括：在第二取向层上涂敷包括二向色性染料、可聚合液晶和光引发剂的第二材料层；对第二材料层进行取向固化。
相应地，在线偏振片上形成第一取向层之后，根据本实施例的显示器的制造方法还可以包括：对第一取向层进行摩擦取向。
相应地，在第一取向层上形成延迟膜，可以包括：在第一取向层上涂敷包括可聚合液晶和光引发剂的第一材料层；对第一材料层进行取向固化。
进一步地，在对置基板上形成线偏振片之前，制造减反射结构的步骤还可以包括：在对置基板上形成光截止层。
示例性地，该光截止层位于第二取向层与对置基板之间或者位于线偏振片与对置基板之间。
以下参照图9a～9d对根据本实施例的显示器的制造方法给出了示例性描述，这里，以减反射结构形成对置基板上作为示例，图9a～9d示出了在对置基板上执行制造减反射结构的各步骤后所获得的截面图，其中该减反结构设置在该对置基板与阵列基板之间。
提供对置基板107，如图9a所示；
在对置基板107上形成光截止层108，如图9b所示。
示例性地，该光截止层108通过采用等离子体气相沉积法交替沉积多个 高折射率层和多个低折射率层而形成。例如，该高折射率层为氮化硅层，沉积该氮化硅层的反应气体为SiH4、NH3和N2的混合气体，例如，该混合气体中，SiH4、NH3和N2的流量比可为16∶4∶1；该低折射率层为氧化硅层，沉积该氧化硅层的反应气体为SiH4、NO2和N2的混合气体，例如，该混合气体中，SiH4、NH3和N2的流量比可为40：4：1。
在光截止层108上形成第二取向层109，对该第二取向层109进行摩擦取向，如图9c所示；
在形成有光截止层108和第二取向层109的对置基板107上顺次形成线偏振片104、第一取向层103和延迟膜102，如图9d所示。
需要说明的是，形成线偏振片104的示例步骤，形成第一取向层103的示例步骤，形成延迟膜102的示例步骤可以参考实施例二的相应描述，为了简洁，这里不再赘述。
与图9a～9d相对应，图12给出了在对置基板上形成减反射结构的流程图。如图12所示，制造减反射结构可以包括如下步骤：
步骤S91：在对置基板上形成光截止层。
步骤S92：在形成有光截止层的对置基板上形成第二取向层，并对第二取向层进行摩擦取向。
步骤S93：在第二取向层上涂敷包括二向色性染料、可聚合液晶和光引发剂的第二材料层，并对第二材料层进行取向固化形成线偏振片。
步骤S94：在线偏振片上形成第一取向层，对第一取向层进行摩擦取向。
步骤S95：在第一取向层上涂敷包括可聚合液晶和光引发剂的第一材料层，对第一材料层进行取向固化，得到延迟膜。
需要注意的是，在形成减反射结构之前，对置基板上可以形成有OELD显示面板的一些构件，例如，如果OLED显示面板为WOLED-COA(白色OLED及彩色滤波阵列)方式，则可以在对置基板上形成有红绿蓝三种颜色的滤色器，备选地，可以先形成滤色器，然后形成减反射结构，或者可以先形成减反射结构，然后形成滤色器等，本发明的实施例并不对此进行限定。
这里应该注意的是，以上的描述中以显示面板为有机电致发光面板为例进行了说明，但是根据本发明实施例的显示面板还可以为包括背光源的液晶显示面板，本发明的实施例并不对此进行限定。
对于根据本发明实施例的减反射结构、显示器及其制造方法，在根据本发明实施例的用于减轻外部光的反射的减反射结构中，该减反射结构包括由液晶材料制成的延迟膜和线偏振片，这样可以利用涂敷等方法形成延迟膜、线偏振片以及取向层，因此，与现有的例如利用贴附而设置在显示面板外部的减反射结构相比，根据本发明实施例的减反射结构具有显著减小的厚度，从而采用该减反射结构的显示器能够实现超薄显示。进一步地，在本发明的实施例中，为了在减薄减反射结构的同时，获得较高的偏光度，光截止层还进一步被提供，该光截止层构造为截止不利于偏光度提高的光，从而在减小厚度的同时，获得较高的偏光度。这样采用该减反射结构的显示器，由于有效地减少了内部构件对外部光的反射，从而显著提高了图像显示的对比度，而且在厚度显著减薄的同时，提高了偏光度。
以上所述，仅为本发明的具体实施方式，但本发明实施例的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明实施例揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明实施例的保护范围之内。
本申请要求于2016年1月28日递交的中国专利申请第201610061301.4号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (21)

  1. 一种减反射结构，包括：
    延迟膜，
    线偏振片，设置在所述延迟膜的一侧，以及
    至少一个取向层，构造为对所述延迟膜以及所述线偏振膜取向，
    其中，所述延迟膜和所述线偏振片包括液晶。
  2. 根据权利要求1所述的减反射结构，其中，所述至少一个取向层包括第一取向层，且所述第一取向层位于所述延迟膜与所述线偏振片之间且构造为对所述延迟膜以及所述线偏振膜取向。
  3. 根据权利要求1所述的减反射结构，其中所述线偏振片包括二向色性染料、可聚合液晶和光引发剂，所述延迟膜包括可聚合液晶和光引发剂。
  4. 根据权利要求3所述的减反射结构，其中，所述线偏振片中，所述二向色性染料的质量百分比为1％-20％，所述可聚合液晶的质量百分比为
    75％-95％，且所述光引发剂的质量百分比为0.1％-5％。
  5. 根据权利要求1、3和4中任一项所述的减反射结构，还包括：
    光截止层，设置在所述线偏振片的背离所述延迟膜的一侧且构造为截止特定波长范围的光。
  6. 根据权利要求5所述的减反射结构，其中所述光截止层构造为截止波长范围为650nm到780nm的光。
  7. 根据权利要求6所述的减反射结构，其中所述光截止层构造为截止波长范围为700nm到780nm的光。
  8. 根据权利要求1、3至7中任一项所述的减反射结构，其中，所述至少一个取向层包括第一取向层和第二取向层，
    所述第一取向层位于所述延迟膜和所述线偏振片之间且构造为对所述线偏振片进行取向，
    所述第二取向层位于所述延迟膜的背离所述线偏振片的一侧且构造为对所述延迟膜进行取向。
  9. 根据权利要求1、3至7中任一项所述的减反射结构，其中，所述至少一个取向层包括第一取向层和第二取向层，
    所述第一取向层位于所述延迟膜和所述线偏振片之间且构造为对所述延迟膜进行取向，
    所述第二取向层位于所述线偏振片背离所述延迟膜的一侧且构造为对所述线偏振片进行取向。
  10. 根据权利要求5至7中任一项所述的减反射结构，其中，所述至少一个取向层包括第一取向层和第二取向层，
    所述第一取向层位于所述延迟膜和所述线偏振片之间且构造为对所述延迟膜进行取向，
    所述第二取向层设置在所述线偏振片与所述截止层之间且构造为对所述线偏振片进行取向。
  11. 根据权利要求5至7中任一项所述的减反射结构，其中所述光截止层包括交替设置的多个高折射率层和多个低折射率层。
  12. 根据权利要求11所述的减反射结构，其中所述多个高折射率层的每个为氮化硅层，所述多个低折射率层的每个为氧化硅层。
  13. 根据权利要求12所述的减反射结构，其中所述多个高折射率层的每层的厚度相等或不相等，所述多个低折射率层的每层的厚度相等或不相等。
  14. 根据权利要求1所述的减反射结构，其中，所述至少一个取向层包括第一取向层和第二取向层，
    所述第一取向层设置在所述延迟膜的与所述线偏振片相反的一侧且构造为对所述延迟膜取向；以及
    所述第二取向层设置在所述线偏振片的与所述延迟膜相反的一侧且构造为对所述线偏振片取向。
  15. 根据权利要求14所述的减反射结构，还包括：
    光截止层，设置在所述第二取向层的与所述线偏振片相反的一侧且构造为截止特定波长范围的光。
  16. 根据权利要求15所述的减反射结构，其中所述光截止层构造为截止波长范围为650nm到780nm的光。
  17. 一种显示器，包括：
    显示面板；
    减反射结构，如权利要求1-16中任一项所述，
    其中，所述显示面板包括阵列基板和与所述阵列基板相对设置的对置基板，
    其中，所述减反射结构设置在所述阵列基板与所述对置基板之间；或者所述减反射结构位于所述对置基板的与所述阵列基板相反的一侧。
  18. 根据权利要求17所述的显示器，其中，所述阵列基板包括：
    衬底基板；
    多个像素单元，形成在所述衬底基板上且所述多个像素单元的每个中形成有有机发光二极管和薄膜晶体管。
  19. 根据权利要求18所述的显示器，其中，所述减反射结构设置在所述阵列基板与所述对置基板之间，且所述减反射结构与其上形成有所述有机发光二极管和所述薄膜晶体管的所述衬底基板之间还形成有平坦化层。
  20. 一种显示器的制造方法，包括：
    提供显示面板，所述显示面板包括彼此对置的阵列基板以及对置基板，所述阵列基板包括：衬底基板；以及多个像素单元，形成在所述衬底基板上且所述多个像素单元的每个中形成有有机发光二极管和薄膜晶体管，其中所述多个像素单元位于所述对置基板设置与所述衬底基板之间；
    制造减反射结构，包括：
    在其上形成有所述有机发光二极管和薄膜晶体管的衬底基板或者所述对置基板上形成延迟膜、第一取向层和线偏振片；
    其中所述第一取向层位于所述延迟膜与所述线偏振片之间，所述延迟膜和所述线偏振片包括液晶。
  21. 一种减反射结构的制造方法，包括：
    准备基板；
    在所述基板上形成延迟膜、第一取向层和线偏振片，
    其中所述第一取向层位于所述延迟膜与所述线偏振片之间，所述延迟膜和所述线偏振片包括液晶。
PCT/CN2016/104176 2016-01-28 2016-11-01 减反射结构及其制造方法、显示器及其制造方法 Ceased WO2017128794A1 (zh)

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US20180067232A1 (en) 2018-03-08
CN105510999A (zh) 2016-04-20
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