WO2017131879A1 - Laser accordable à cristaux photoniques silicium - Google Patents

Laser accordable à cristaux photoniques silicium Download PDF

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Publication number
WO2017131879A1
WO2017131879A1 PCT/US2016/066439 US2016066439W WO2017131879A1 WO 2017131879 A1 WO2017131879 A1 WO 2017131879A1 US 2016066439 W US2016066439 W US 2016066439W WO 2017131879 A1 WO2017131879 A1 WO 2017131879A1
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optical
optical path
mirror
optically coupled
ring resonator
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Guilhem De Valicourt
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Nokia of America Corp
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Alcatel Lucent USA Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0268—Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1007—Branched waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1092—Multi-wavelength lasing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator

Definitions

  • the present disclosure is directed, in general, to silicon-photonic lasers and devices using such lasers.
  • Some embodiments feature an apparatus comprising:
  • a silicon photonic integrated circuit having a first ring resonator pair, a first phase shifter and a first mirror optically coupled to each other to form a first optical path; and a second ring resonator pair, a second phase shifter and a second mirror optically coupled to each other to form a second optical path;
  • first optical path is configured to be selectively optically coupled to the reflective semiconductor optical amplifier to thereby form a first laser cavity
  • second optical path is configured to be selectively optically coupled to the reflective semiconductor optical amplifier to thereby form a second laser cavity
  • said selective optical coupling of each one of the first optical path and the second optical path with the reflective semiconductor optical amplifier is made by using a respective variable optical attenuator provided in each one of the respective first optical path and the second optical path.
  • said selective optical coupling of each one of the first optical path and the second optical path with the reflective semiconductor optical amplifier is made by using an Nxl optical coupler provided between each one of the first optical path and the second optical path and the reflective semiconductor optical amplifier and a respective optical switch provided in each one of the respective first optical path and the second optical path.
  • said selective optical coupling of each one of the first optical path and the second optical path with the reflective semiconductor optical amplifier is made by using an optical switch provided between each one of the first optical path and the second optical path and the reflective semiconductor optical amplifier and configured to switch from a first switching state where the first optical path is formed to a second switching state where the second optical path is formed.
  • said selective optical coupling of each one of the first optical path and the second optical path with the reflective semiconductor optical amplifier is made by using an Nxl optical coupler provided between each one of the first optical path and the second optical path and the reflective semiconductor optical amplifier and a respective optical switch provided in each one of the respective first optical path and the second optical path.
  • said first mirror and second mirror are partially reflective and said third mirror is fully reflective.
  • said first mirror and second mirror are fully reflective and said third mirror is partially reflective.
  • the ring resonators of the first ring resonator pair have respective free spectral ranges which are different from each other.
  • the ring resonators of the second ring resonator pair have respective free spectral ranges which are different from each other.
  • the apparatus is configured to selectively lase using the first laser cavity or the second laser cavity.
  • the first ring resonator pair is configured to produce a Vernier effect based on the difference between respective free spectral ranges of the rings in the first ring resonator pair, said Vernier effect capable of enabling tunability of a wavelength of a first optical signal generated by the apparatus.
  • the second ring resonator pair is configured to produce a Vernier effect based on the difference between respective free spectral ranges of the rings in the second ring resonator pair, said Vernier effect capable of enabling tunability of a wavelength of a second optical signal generated by the apparatus.
  • the silicon photonic integrated circuit and the reflective semiconductor optical amplifier are coupled to each other by butt-coupling, vertical grating coupling, molecular bonding or using coupling lenses.
  • apparatus is configured to switch off the first variable optical attenuator and to switch on the second variable optical attenuator and to pre- tune the ring resonators of the second ring resonator pair to a target wavelength.
  • the apparatus is configured to emit a target wavelength by switching off the second variable optical attenuator and switching on the first variable optical attenuator.
  • the first mirror, the second minor or the third mirror are a Sagnac loop mirror or a Bragg grating mirror.
  • each one of the phase shifter or the second phase shifter is configured to control a position of a mode of an optical signal within the respective first or the second cavity.
  • Some embodiments feature a tunable laser comprising:
  • a silicon photonic integrated circuit having a first ring resonator pair, a first phase shifter and a first mirror optically coupled to each other to form a first optical path; and a second ring resonator pair, a second phase shifter and a second mirror optically coupled to each other to form a second optical path;
  • first optical path is configured to be selectively optically coupled to the reflective semiconductor optical amplifier to thereby form a first laser cavity
  • second optical path is configured to be selectively optically coupled to the reflective semiconductor optical amplifier to thereby form a second laser cavity
  • optical transmitter comprising:
  • a silicon photonic integrated circuit having a first ring resonator pair, a first phase shifter and a first mirror optically coupled to each other to form a first optical path; and a second ring resonator pair, a second phase shifter and a second mirror optically coupled to each other to form a second optical path;
  • first optical path is configured to be selectively optically coupled to the reflective semiconductor optical amplifier to thereby form a first laser cavity
  • second optical path is configured to be selectively optically coupled to the reflective semiconductor optical amplifier to thereby form a second laser cavity
  • first optical modulator is provided at an output of the first laser cavity and is configured to modulate a laser signal generated by the first laser cavity
  • second optical modulator is provided at an output of the second laser cavity and is configured to modulate a laser signal generated by the second laser cavity
  • FIG. 1 is a schematic representation of an example of a wavelength selective laser comprising an array waveguide grating according to known solutions.
  • FIG. 2 is a schematic representation of an example of a wavelength selective apparatus, e.g. a laser, according to some embodiments.
  • FIG. 3 is a schematic representation of an example of a wavelength selective apparatus, e.g. a laser, according to some embodiments.
  • FIG. 4 is a schematic representation of an example of a wavelength selective apparatus, e.g. a laser, according to some embodiments.
  • AWG arrayed waveguide gratings
  • AWG-laser A laser manufactured based on AWG
  • the AWG-laser comprises an AWG filter incorporated in the laser cavity which is made using an InP platform
  • FIG. 1 represents a schematic view of an AWG-laser 100 according to a known approach.
  • the AWG laser 100 comprises an AWG element which includes an array of waveguides 110, a first free space region 120 coupled to a respective end of each one of the waveguides of the array 110 and a second free space region 130 coupled to another respective end of each one of the waveguides of the array 110.
  • An input waveguide 140 is optically coupled to an input port 121 of the first free space region 120 and a plurality of output waveguides 150 are each coupled to respective output ports 132 of the second free space region 130.
  • This configuration of the AWG is well-known in the related art.
  • the AWG-laser 100 further includes a first semiconductor optical amplifier (SOA) 160 optically coupled to the input waveguide 140 and an array of second semiconductor optical amplifiers (SOAs), collectively shown by reference numeral 170, such that each SOA from the array of SOAsl70 is optically coupled to an end of a respective one of the output waveguides from the plurality of the output waveguides ISO.
  • SOA semiconductor optical amplifier
  • SOAs second semiconductor optical amplifiers
  • the AWG-laser 100 further includes an array of mirrors, collectively shown by reference numeral 180. Each mirror from the array of mirrors 180 is coupled, at a respective facet thereof, to a respective output 171 of an SOA from the array of SOAsl70.
  • the AWG-laser 100 further includes a partially reflective mirror 190.
  • an optical signal is injected into the input waveguide 140 before being input into the first free space region 120 through the input port 121.
  • the optical signal further propagates through the first free space region 120 and enters, through respective output ports 122, into the plurality of waveguides 110.
  • the waveguides in the plurality of waveguides 110 have different lengths, different amounts of phase shifts are introduced on each portion of the optical signal as it propagates therethrough.
  • the portion of the optical signal in each waveguide of the plurality of waveguides 110 is then input into the second free space region 130, through input ports 131 thereof.
  • the propagation of the various light-beams through the second free space region 130 causes interferences between them at the output ports 132 thereof.
  • each output waveguide from the array of the output waveguide ISO receives an optical signal of a specific wavelength.
  • optical signals in each respective output waveguide from the array of the output waveguides ISO is then input into a respective SOA from the array of SOAs 170, impinges on a respective facet of a mirror from the array of mirrors 180 and is subsequently reflected back into the same SOA from the array of SOAs 170 from which it received the optical signal.
  • each reflected optical signal propagates in the opposite direction from the respective SOA of the array of SOAs 170 to the first SOA 160 traversing the output waveguides ISO, the second frees space region 130, the array of waveguides 110, the first free space region 120 (where it is multiplexed), the input waveguide 140 and the first SOA 160.
  • the first SOA is optically coupled to a facet 191 of the partially reflective mirror 190.
  • the multiplexed optical signal is reflected back in the opposite direction where it undergoes the same process as discussed above related to the propagation of the optical signal from the first SOA 160 to the array of SO As 170.
  • the optical signal in each direction of propagation the optical signal is amplified, in multiplexed form as it traverse the first SOA, and is also amplified, in demultiplexed form as each one of the demultiplexed portions of the optical signal traverses through each one of the respective SOAs from the array of SOAs 170.
  • the combined arrangement of the AWG, the first SOA, the array of SOAs, the partially reflective mirror and array of mirrors, as described above constitutes a laser cavity which can amplify light at each back and forth propagation until the optical signal reaches the lasing threshold and the AWG-laser 100 starts to lase through output fiber F.
  • each SOA from the array of SOAs 170 is turned ON in order to emit one wavelength and is turned OFF in order to inhibit the emission of the corresponding wavelength.
  • the AWG-laser of FIG. 1 is therefore capable of providing a multi-frequency laser as it is capable of emitting several wavelengths at the same time.
  • an integration of this laser structure in an InP platform should typically exhibit a large footprint (18 cm x 9 mm).
  • Such large size introduces certain drawbacks, including but not limited to high cost (as InP material is typically more expensive than silicon material) and the modal selectivity as long Fabry- Perot cavities typically induce closer longitudinal modes.
  • AWG- lasers are typically not continuously tunable because typically each lasing wavelength is defined by the transfer function of the AWG and such transfer function includes discrete channels thus the lasing wavelength is generated on a discrete grid.
  • hybrid ring-based tunable lasers have typically shown capability for continuous tunability; however rings used in such structures typically need to be thermally tuned which may lead to slower switching time (of the order of tens of microseconds).
  • a wavelength- tunable hybrid silicon-based apparatus e.g. a laser
  • a wavelength- tunable hybrid silicon-based apparatus e.g. a laser
  • a plurality of parallel and tunable Vernier ring resonator laser cavities are herein proposed, based on the use of a plurality of parallel and tunable Vernier ring resonator laser cavities.
  • FIG.2 is a schematic representation of an example of a tunable apparatus, e.g. a laser, according to some embodiments.
  • apparatus 200 is based on a dual structure comprising two laser cavities as will be described below; however, the disclosure is not so limited and other number of cavities may likewise be provided.
  • a first optical path PI may comprise a first pair of ring resonators 211, a first phase shifter 213, a first variable optical attenuator (VOA) 215 and a first 100% reflection mirror 217. These elements are optically coupled to each other on the first optical path PI using a first waveguide 219 and the order of their location in the optical path may be different than what is shown in FIG. 2.
  • the first 100% reflection mirror 217 is located at an end of the first optical path PI, as shown in FIG. 2, so as to provide reflection of the optical signal back into the first optical path PI .
  • the first 100% reflection mirror 217 may be for example a Sagnac loop mirror comprising a 1x2 MMI (not specifically shown in FIG. 2) and a waveguide loop 217L, as known in the related art.
  • a second optical path P2 may comprise a second pair of ring resonators 212, a second phase shifter 214, a second variable optical attenuator (VOA) 216 and a second 100% reflection mirror 218. These elements are optically coupled to each other on second optical path P2 using a second waveguide 220.
  • the second 100% reflection mirror 218 is located at an end of the second optical path P2, as shown in FIG. 1, so as to provide reflection of the optical signal back into the second optical path P2.
  • the second 100% reflection mirror 218 may also be a Sagnac loop mirror 218 comprising a 1x2 MMI (not specifically shown in FIG. 1) and a waveguide loop 218L.
  • Optical path PI and optical path P2 are then optically coupled to each other by a combiner 230, which may be for example a 2x1 MMI (for only two optical paths and Nxl for N optical paths).
  • the two optical paths may comprise substantially similar, or even identical, elements (with the exception of the first and the second ring resonator pairs 211 and 212 having different resonant frequencies). Therefore, the following description will only refer to optical path PI , noting that in this example the optical path P2 preferably has substantially similar or identical characteristics (with the exception mentioned above). Examples of paths with different characteristics are provided with reference to FIGS. 3-4. A combination of such different paths may also be possible.
  • the ring resonator pair 211 comprises two ring resonators having slightly different free spectral ranges.
  • the free spectral range (FSR) of one ring resonator from the first pair of ring resonators may be 400 GHZ and the FSR of the other one of the first pair may be 440 GHZ.
  • the difference between the respective FSRs of the ring resonators of the first pair 211 causes the so-called Vernier effect when an optical signal is propagating through the ring resonator pair 211.
  • the Vernier effect is a well-known phenomenon. Briefly, the Vernier effect is produced due to the difference in the FSRs of the ring resonators of the first pair 211 which in turn causes the transmittance spectra of the two ring resonators in the pair 211 overlap with each other, therefore enabling a wider combined spectrum with an improved tunability range as compared to the tunability ranges available in individual ring resonators.
  • the apparatus 200 further comprises a reflective semiconductor optical amplifier (RSOA) 250 comprising a partially reflective mirror 260.
  • the RSOA 250 may be of any known type and may be provided on a ⁇ -V material, preferably an InP, platform.
  • the RSOA is aligned to the SPIC platform 210 by an optical path 240. Such alignment may be made using known techniques such as butt-coupling, using lenses, vertical grating couplers, evanescent coupling (using molecular bonding) and other techniques as known by those skilled in the related art.
  • a buried-ridge structure RSOA with a passive waveguide may be used as it has certain fabrication advantages and provides efficient current injection and good thermal dissipation.
  • the phase shifted optical signal is then input, through optical path 240, into the RSOA 250 where it undergoes a first amplification.
  • the amplified optical signal further propagates within the RSOA 250, impinges on the partially reflective mirror 260 and is reflected back in the opposite direction.
  • the reflected optical signal undergoes a further amplification within the RSOA 250 and from the latter is directed back into the first phase shifter 213.
  • the optical signal is further input into the first ring resonator pair 211 and subsequently into the first VOA 215 which is turned off and therefore introduces no or negligible attenuation on the optical signal.
  • the optical signal is then input into the first 100% reflection mirror 217.
  • the latter mirror is illustrated as a Sagnac loop mirror where the light is split by a 1x2 MMI (not specifically shown) into the two branches, each portion of the split light travelling in one of the two branches in directions opposite to one another.
  • the two branches form a closed loop 217L as shown in FIG. 2.
  • the two portions of the split light combine with each other and are output from the 100% reflection mirror and input back into the first optical path PI through the same (although in this direction 2x1) MMI.
  • the optical signal is input back into the first optical path PI in the direction toward the partially reflective mirror 260, the same processes as already described above, in the forward and reverse directions., will occur.
  • the optical signal is further amplified as it passes through the RSOA 250 multiple times in forward and reverse directions. As a result of such amplification, the light intensity increases in every propagation cycle and when such intensity increases above a specific threshold, lasing occurs.
  • the reflective semiconductor optical amplifier 250, the first phase shifter 213, the first ring resonator pair 211, the first variable optical attenuator 215 and the first 100% reflection mirror 217, optically coupled to each other through the optical paths PI and 240 form a first laser cavity.
  • the structure and the principles of operation of the second optical path P2 is similar or identical to that of the first optical path PI. Therefore, based on similar description as that provided with reference to the first optical path PI, it may be concluded that the reflective semiconductor optical amplifier 250, the second phase shifter 214, the second ring resonator pair 212, the second variable optical attenuator 216 and the second 100% reflection mirror 218, optically coupled to each other through optical paths P2 and 240 form a second laser cavity.
  • Each of the ring resonator pairs 211 and 212 may be designed such that each pair's respective resonant frequency is different from the other ring resonator pair. In this manner, a first wavelength may propagate in the first optical path PI and a second wavelength, different from the first wavelength, may propagate in the second optical path P2.
  • the apparatus 200 is capable of providing single mode operation with wavelength tunability by switching the VOAs ON and OFF to decouple or to couple the optical path, to which a particular VOA corresponds, from or to the RSOA.
  • one VOA for example the first VOA 215, may be turned OFF, thereby allowing the passage of an optical signal with a specific wavelength (with no or negligible attenuation).
  • the other VOA e.g. the second VOA 216, may be turned ON, thereby substantially blocking the passage of an optical signal (with a different wavelength).
  • the optical signal By propagating back and forth through the first optical path PI, the optical signal is progressively amplified and once the lasing threshold is reached, it is emitted from the RSOA 250 as a laser beam 270. Furthermore, due to the presence of the Vernier effect in the ring resonator pair 211, said pair generates a spectrum within which the wavelength of the optical signal propagating through such ring resonator pair 211 can be tuned.
  • a similar process maybe applied with respect to optical path 2 in conjunction with the RSOA 250.
  • the VOAs 215 and 216 may be of any known type.
  • High-speed p-i-n junction VOAs may be used to enable switching between cavities based on carrier injection. Therefore switching times between the two wavelengths in the range of tens of nanoseconds may be achieved.
  • Such VOAs may operate upon the injection a control current, resulting in the generation of free carriers that absorb, and thereby, attenuate the light.
  • Such carrier injection process, and thus the switching speed of the VOA is substantially faster than the switching speed of the known solutions, e.g. by thermo-optically exciting the ring resonators.
  • a small signal electro-optic bandwidth of VOA up to 300 MHz is believed to be achievable. Such electro-optic bandwidth characterizes the time needed for the device to respond to an electrical excitement.
  • the ring resonators may each be operated by thermo-optic effect to obtain tuning of the wavelength of the optical signal.
  • electrically excited metal heaters may be used on the ring resonators to allow thermal tuning of the ring resonator peak wavelengths.
  • the pre-tuning technique as described below may preferably be used to improve speed.
  • the ring resonators of the second pair 212 of the second optical path P2 are pre-tuned to a second desired wavelength during a small (preferably minimum) time duration.
  • the second VOA 216 is turned OFF and the first VOA 215 is turned ON.
  • the laser can switch to the state of emitting the second wavelength without needing additional tuning time for the ring resonators of the second pair 212.
  • VOAs corresponds to one example of an embodiment for providing a coupling configuration between the optical paths and the RSOA to form a laser cavity. Further embodiments of such coupling configuration may also be considered in the context of the present disclosure. Some non-limiting examples of such further embodiments are provided below with reference to FIGS. 3-4.
  • the wavelength selective apparatus 300 e.g. a laser
  • a silicon photonic integrated circuit (SPIC) platform 310 which comprises N optical paths Pl-PN.
  • a first optical path PI may comprise a first pair of ring resonators 311-1, a first phase shifter 313-1, a first optical switch 315-1 and a first 100% reflection mirror 317-1. These elements are optically coupled to each other on the first optical path PI using a first waveguide 319-1 and the order of their location in the optical path PI is not limited to what is shown in FIG. 3.
  • the first 100% reflection mirror 317-1 is located at an end of the first optical path PI, as shown in FIG. 3, so as to provide reflection of the optical signal back into the first optical path PI.
  • the first pair of ring resonators 311-1, first 100% reflection mirror 317-1 and the first phase shifter 319-1 may be similar to the ones described with reference to FIG. 2.
  • the plurality of optical paths Pl-PN may preferably have identical or similar structures and functionalities. Each one of the optical paths Pl-Pn is coupled to a respective port 370-1 to 370-N of an Nxl optical coupler 370. A further port 371 of the Nxl optical coupler 370 is coupled to the optical path 340.
  • the apparatus 300 further comprises a reflective semiconductor optical amplifier (RSOA) 350 comprising a partially reflective mirror 360.
  • the RSOA 350 may be of the type described with reference to FIG.2.
  • the RSOA 350 is aligned to the SPIC platform 310 by the optical path 340. Such alignment may be made in similar manners as described with reference to FIG. 2.
  • the operation of the apparatus 300 is substantially similar to the operation of the apparatus 200 described with reference to the apparatus of FIG. 2, with the difference that instead of using VOAs for closing (forming) or opening (inhibiting) laser cavities, the apparatus 300 of FIG. 3 uses a plurality of optical switches 315-1 to 315-N each located on a respective optical path Pl-PN. In this manner, in order to form a laser cavity using optical path PI, the first optical switch 315-1 is closed to thereby form a laser cavity between the optical path PI and the RSOA 350 and allow propagation of an optical signal back and forth in the laser cavity between the partially reflective mirror 317-1 and the reflective mirror 360 and subsequently lase once the lasing threshold is reached.
  • optical witch 317-1 While optical witch 317-1 is closed (i.e. the laser cavity formed), the other optical switches 317-2 to 317-N may be kept open to inhibit formation of laser cavities in their respective optical paths.
  • mirror 360 comprised in the RSOA 350 is fully (100%) reflective and the mirrors 317-1 to 317-N provided on the optical paths Pl-PN arc partially reflective.
  • lasing would selectively occur at outputs 390-1 to 390-N of the partially reflective mirrors 317-1 to 317-N.
  • the wavelength selective apparatus 400 e.g. a laser
  • a silicon photonic integrated circuit (SPIC) platform 410 which comprises N optical paths Pl-PN.
  • a first optical path PI may comprise a first pair of ring resonators 411-1, a first phase shifter 413-1 and a first 100% reflection mirror 417-1. These elements are optically coupled to each other on the first optical path PI using a first waveguide 319-1 and the order of their location in the optical path PI is not limited to what is shown in FIG. 4.
  • the first 100% reflection mirror 417-1 is located at an end of the first optical path PI, as shown in FIG.4, so as to provide reflection of the optical signal back into the first optical path PI.
  • the first pair of ring resonators 411-1, first 100% reflection mirror 417-1 and the first phase shifter 419-1 may be similar to the ones described with reference to FIGS. 2 or 3.
  • the plurality of optical paths Pl-PN may preferably have identical or similar structures and functionalities.
  • the apparatus 400 further comprises an optical switch.
  • Optical switch 470 is configured to switch between optical paths Pl-PN by establishing optical connection with respective ports 420-1 to 420-N of the optical paths Pl-Pn.
  • the apparatus 300 further comprises a reflective semiconductor optical amplifier (RSOA) 450 comprising a partially reflective mirror 460.
  • the RSOA 450 may be of the type described with reference to FIGS. 2 or 3.
  • the RSOA 450 is aligned to the SPIC platform 410 by the optical path 440. Such alignment may be made in similar manners as described with reference to FIGS. 2 or #.
  • the operation of the apparatus 400 is substantially similar to the operation of the apparatus 200 described with reference to the apparatus of FIG. 2 (or apparatus 300 described with reference to the apparatus of FIG. 3), with the difference that instead of using VOAs in the embodiment of FIG. 2 or using optical switches on each optical path as in the embodiment of FIG.
  • the apparatus 400 of FIG. 4 uses an optical switches 470 located between the plurality of optical paths Pl-PN and the RSOA 450.
  • the optical switch 470 establishes optical connection between the port 420-1 of the optical path PI and the RSOA 450 to thereby allow propagation of an optical signal back and forth in the laser cavity between the partially reflective mirror 417-1 and the reflective mirror 460 and subsequently lase once the lasing threshold is reached.
  • optical switch 420 While optical switch 420 is connected to optical path PI (i.e. forms the laser cavity in path PI), the other optical paths P2-PN may be kept open to inhibit formation of laser cavities in their respective optical paths.
  • the apparatus 400 such that mirror 460 comprised in the RSOA 450 is fully reflective and the mirrors 417-1 to 417-N provided on the optical paths Pl-PN are partially reflective. In this arrangement, lasing would selectively occur at outputs 490-1 to 490-N of the partially reflective mirrors 417-1 to 417-N.
  • the optical switches as described with reference to FIGs.3 and 4 may be for example made using pn junction switches included, for example, in a Mach-Zehnder configuration with the associated advantage of switching speeds of less than 1 ns.
  • the present solution provides substantial advantages in terms of alignment of the SPIC and the InP platforms. Reducing edge reflectivity and using a spot-size converter (mode matching) in such alignment may result in efficient coupling between the RSOA and the InP platforms.
  • HI-V chip and the silicon chip may be fabricated separately and hybridized once the individual chips are prepared. Therefore, current commercial foundry can be used and the compatibility with CMOS technology can be maintained.
  • III-V material instead of the III-V material other gain medium material may also be used.
  • One option may be using doped and strained Germanium material as known by those skilled in the related art.
  • using the solution proposed herein may provide an improvement by a factor of 1000 in the switching time as compared to the known ring-based solutions.
  • operation based on a single mode wavelength having a range over 35 nm, from 1554 nm to 1589 nm (corresponding to the RSOA optical-gain bandwidth with a wavelength peak at 1570 nm) and side-mode suppression ratio (SMSR) of over 30 dB may be achieved.
  • SMSR side-mode suppression ratio
  • Still a further advantage of the apparatus herein proposed is the improvement that can be achieved regarding the size of the overall device. Indeed, the size of the final chip may be about 1.1 mm x 2.8 mm including the probing pads. Reducing the edge reflectivity and using spot- size converter (mode matching) results in efficient coupling between the RSOA and the silicon cavity.
  • the apparatus proposed herein may be used in order to build a fast wavelength- tunable transmitter which would further known OOK modulators or advanced modulators in order to generate QPSK signals for instance. Furthermore, the apparatus may be sued to build local oscillators with a coherent receiver in order to provide a fast reconfigurable receiver.
  • a laser apparatus as proposed herein may be an important building block in providing an optical packet switched network as it may form part of a transmitter and a receiver.
  • a fast- wavelength-tunable hybrid silicon-based laser apparatus is herein proposed based on the use of two parallel widely tunable Vernier ring resonator laser cavities capable of being integrated into a single silicon chip.
  • Fast in-cavity carrier-injection variable optical attenuators enable the wavelength selection between the two cavities.
  • the proposed solution provides single mode operation and wavelength tunability over more than 35 nm with fast switching time in the tens of nanosecond range.
  • Other ring resonator configurations may also be used to provide other tuning ranges.
  • the tuning range may be obtained based on the following formula:
  • Tuning range (TR) ⁇ '/c * (FSR1*FSR2/(FSRI-FSR2)); where lambda is the central wavelength and c is the speed of light
  • Some embodiments may be implemented as circuit-based processes, including possible implementation on a single integrated circuit.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

L'invention concerne un appareil comprenant un circuit intégré photonique sur silicium optiquement couplé à un amplificateur optique réfléchissant à semi-conducteur et comportant une première paire de résonateurs en anneau couplés à un premier déphaseur et un premier miroir optique formant un premier trajet optique et une seconde paire de résonateurs en anneau couplés à un second déphaseur et un second miroir formant un second trajet optique. Chacun des premier et le second trajets optiques est couplé optiquement à l'amplificateur optique réfléchissant à semi-conducteur formant ainsi une première et une seconde cavité laser respectivement. L'invention concerne un laser accordable et un émetteur.
PCT/US2016/066439 2016-01-26 2016-12-14 Laser accordable à cristaux photoniques silicium Ceased WO2017131879A1 (fr)

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US10038301B1 (en) 2017-03-21 2018-07-31 Nokia Of America Corporation Hybrid mode-locked laser with tunable number of comb lines
US20190058304A1 (en) * 2017-08-18 2019-02-21 Nokia Solutions And Networks Oy Mode-locked semiconductor laser capable of changing output-comb frequency spacing
US10367333B2 (en) 2017-04-13 2019-07-30 Nokia Of America Corporation Increasing fabry-perot cavity free spectral range in hybrid lasers
US20210126421A1 (en) * 2019-10-24 2021-04-29 Fujitsu Limited Wavelength tunable light source, optical transmission apparatus using the same, and method of controlling wavelength tunable light source
US20230187903A1 (en) * 2020-05-25 2023-06-15 Nippon Telegraph And Telephone Corporation Tunable Laser Diode
US20240258769A1 (en) * 2023-01-31 2024-08-01 Honeywell International Inc. External cavity lasing and on-chip self-injection locking based on cascaded grating structures

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DE102012002077B3 (de) * 2012-01-30 2013-04-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Stimmbarer DBR-Laser und Verfahren zum Betreiben eines stimmbaren DBR-Lasers
US20140133511A1 (en) * 2011-08-10 2014-05-15 Fujitsu Limited Semiconductor optical element
US20150207291A1 (en) * 2014-01-20 2015-07-23 Rockley Photonics Limited Tunable soi laser

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US20140133511A1 (en) * 2011-08-10 2014-05-15 Fujitsu Limited Semiconductor optical element
DE102012002077B3 (de) * 2012-01-30 2013-04-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Stimmbarer DBR-Laser und Verfahren zum Betreiben eines stimmbaren DBR-Lasers
US20150207291A1 (en) * 2014-01-20 2015-07-23 Rockley Photonics Limited Tunable soi laser

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10038301B1 (en) 2017-03-21 2018-07-31 Nokia Of America Corporation Hybrid mode-locked laser with tunable number of comb lines
US10367333B2 (en) 2017-04-13 2019-07-30 Nokia Of America Corporation Increasing fabry-perot cavity free spectral range in hybrid lasers
US20190058304A1 (en) * 2017-08-18 2019-02-21 Nokia Solutions And Networks Oy Mode-locked semiconductor laser capable of changing output-comb frequency spacing
US10840672B2 (en) * 2017-08-18 2020-11-17 Nokia Solutions And Networks Oy Mode-locked semiconductor laser capable of changing output-comb frequency spacing
US20210126421A1 (en) * 2019-10-24 2021-04-29 Fujitsu Limited Wavelength tunable light source, optical transmission apparatus using the same, and method of controlling wavelength tunable light source
US11664644B2 (en) * 2019-10-24 2023-05-30 Fujitsu Limited Wavelength tunable light source, optical transmission apparatus using the same, and method of controlling wavelength tunable light source
US20230187903A1 (en) * 2020-05-25 2023-06-15 Nippon Telegraph And Telephone Corporation Tunable Laser Diode
US12676454B2 (en) * 2020-05-25 2026-07-07 Ntt, Inc. Tunable laser diode
US20240258769A1 (en) * 2023-01-31 2024-08-01 Honeywell International Inc. External cavity lasing and on-chip self-injection locking based on cascaded grating structures

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