WO2017162736A1 - Procédé de fabrication d'un composant optoélectronique et composant optoélectronique - Google Patents

Procédé de fabrication d'un composant optoélectronique et composant optoélectronique Download PDF

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Publication number
WO2017162736A1
WO2017162736A1 PCT/EP2017/056819 EP2017056819W WO2017162736A1 WO 2017162736 A1 WO2017162736 A1 WO 2017162736A1 EP 2017056819 W EP2017056819 W EP 2017056819W WO 2017162736 A1 WO2017162736 A1 WO 2017162736A1
Authority
WO
WIPO (PCT)
Prior art keywords
fluoropolymer
semiconductor chips
film
substrate
reflection element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2017/056819
Other languages
German (de)
English (en)
Inventor
Siegfried Herrmann
Georg DIRSCHERL
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of WO2017162736A1 publication Critical patent/WO2017162736A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape

Definitions

  • the invention relates to a method for producing an optoelectronic component. Furthermore, the invention relates to an optoelectronic component. An object of the invention is to provide a method for
  • the component is stable for radiation from the UV and / or blue-emitting region.
  • the device has a compact construction.
  • the method for producing an optoelectronic component comprises
  • the substrate comprises or consists of glass, a thermoplastic or a releasable adhesive.
  • the substrate is preferably designed temporarily. In other words, the substrate will be in a later
  • this has a step B), applying semiconductor chips to the substrate, wherein the semiconductor chips laterally
  • the element arranged or applied may mean that one layer, film or one element is arranged directly in direct mechanical and / or electrical contact with the other layer, film or the other element. Furthermore, it can also mean that one layer, film or one element is arranged indirectly on or over the other layer, foil or the other element. In this case, further layers, films and / or elements can then be arranged between the one and the other layer or film or between the one and the other element.
  • Radiation exit surface is arranged.
  • the semiconductor chips are in particular arranged on the substrate in such a way that they are laterally spaced apart in cross section.
  • the semiconductor chips are in particular adapted, preferably radiation from the visible
  • the composite carrier has a layer sequence, that is to say a film sandwich, made of a transparent fluoropolymer film and a metal foil or of a transparent fluoropolymer foil and a
  • the fluoropolymer has a structural unit A of the following general formula:
  • Ethylene tetrafluoroethylene copolymer (ETFE)
  • the substrate is formed from the fluoropolymer.
  • the composite support then has a metal foil or plastic film, so that after step E) the reflection element of the fluoropolymer of the substrate and the metal foil of the composite carrier is formed.
  • the composite carrier comprises a transparent fluoropolymer and a metal foil or
  • the metal foil or plastic film is shaped in particular as a frame.
  • the fluoropolymer in the composite carrier has in particular two
  • the light is reflected by the low-refraction fluoropolymer, then the light continues to penetrate and attaches to the metal foil or plastic foil, which is called the
  • Reflector serves, thrown back. It is therefore a heterogeneous composite reflection element.
  • the inventors have recognized that by using the ductile plastic material in combination with a ductile, very thin metal foil or plastic film, a compact and UV or blue light stable component
  • Fluoropolymer and the supporting low refractive index have a high reflectivity. Also own
  • the transparent or opaque layer is formed reflective and white.
  • the transparent or opaque layer may in the composite support and / or in the reflection element a
  • the fluoropolymer serves as a matrix material in which the converter material is embedded.
  • the radiation exit surface of the Semiconductor chips free of the reflection element.
  • the semiconductor chip is embedded in the reflective element such that it covers the side surfaces and the
  • FIGS. 1A to II a method for producing an optoelectronic component according to an embodiment
  • FIGS. 2A to 21 a method for producing an optoelectronic component according to an embodiment
  • FIGS. 3A to 5B each an optoelectronic component
  • FIG. 6A shows a heating curve of a fluoropolymer according to one embodiment
  • FIGS. 1A to II show a method for producing an optoelectronic component according to FIG.
  • a substrate 1 in particular a
  • the semiconductor chips 2 each have a semiconductor layer sequence which
  • FIG. 1B shows the provision of a composite carrier 3.
  • the composite support 3 comprises a fluoropolymer film 32 comprising the fluoropolymer 7.
  • the composite carrier 3 further comprises a metal foil 31, for example
  • Plastic film 31 can be used.
  • FIG. 1C shows the molding of the composite support by means of a molding tool 4.
  • the mold 4 can
  • FIG. 1D it is shown that the composite carrier 3 is applied to the forming tool 4 and, taking advantage of the thermoplastic and ductile properties of the
  • Composite support for example, by a hot mold with negative pressure is formed.
  • the hot mold with negative pressure is formed.
  • Composite support 3 a negative impression of the pressing tool 4.
  • FIG. IE it is shown that the composite carrier 3 and the
  • Substrate 1 are pressed together.
  • the pressing can be done, for example, at temperatures greater than or equal to 150 °.
  • This surface is especially in cross section the surface between the contacts and left and right sides of the contacts.
  • FIG. 1G it is shown that the substrate 1 is removed again.
  • the result is a composite of semiconductor chips 2, each having a reflection element 6, which comprises at least the fluoropolymer 7.
  • Reflection element on a metal foil or plastic film 61 Reflection element on a metal foil or plastic film 61.
  • FIG. 1H shows that the semiconductor chips 2
  • Method vias 8 can be produced by at least the metal foil 61.
  • the plated-through hole 8 may already be provided in the laminate or be made subsequently with the known methods.
  • FIGS. 2A to 21 show a method for producing an optoelectronic component according to FIG.
  • the substrate 1 is formed from the fluoropolymer and is not removed completely or not at all in a subsequent process.
  • FIG. 2A the provision of the substrate 1 comprising the fluoropolymer is shown.
  • FIG. 2B shows the provision of a composite carrier 3, which here is formed only from a metal foil or plastic film 31.
  • FIG. 2C provides a pressing tool 4 which, as shown in FIG. 2D, forms the composite carrier 3.
  • FIG. 2E shows the pressing of the composite carrier, that is to say the metal foil 31, with the substrate 1, which has the fluoropolymer 7, so that a reflection element 6 is formed, which comprises at least the fluoropolymer 7.
  • Pressing can be done by means of pressure and / or temperature 5.
  • the process steps, as shown in FIGS. 2G to 21, can be carried out analogously to the process steps as explained in FIGS. IG to II.
  • FIG. 3A shows a plan view of an optoelectronic component 100 according to an embodiment.
  • the component 100 has a semiconductor chip 2.
  • the semiconductor chip 2 is surrounded by a reflection element 6 which has at least one fluoropolymer 7.
  • the reflection element 6 also has a metal foil 61 as a border.
  • the fluoropolymer 7 is formed in a transparent manner and the metal foil is reflective.
  • an optoelectronic component 100 can be provided, which has a compact design and is also UV and / or blue light stable.
  • the metal foil 61 may be missing.
  • the fluoropolymer is formed reflective.
  • a plastic film can be used.
  • FIG. 3B shows a bottom view of an optoelectronic component 100 according to an embodiment.
  • the component 100 has a reflection element 6, in particular here the metal foil 61 is shown as a border.
  • the metal foil 61 in cross-section laterally surrounds both the semiconductor chip 2 and the radiation exit surface
  • Metal foil 61 has holes which serve for contacting the p and n contacts.
  • FIGS. 4A to 4C each show a schematic
  • the component 100 of FIG. 4A has a semiconductor chip 2 which is embedded in a reflection element 6.
  • the side surfaces of the semiconductor chip 2 and the side opposite the radiation exit surface have a direct mechanical contact with the fluoropolymer 7.
  • the reflection element 6 also has a metal foil 61 which forms a border of the
  • Reflection element 6 represents.
  • another component geometry is one
  • the component of FIG. 4B additionally has a converter element 9, which in the
  • Reflection element 6 is additionally embedded.
  • the side surfaces of the converter element 9 and the side surfaces of the semiconductor chip form and
  • Reflection element 6 covered. In particular, only the Radiation exit surface of the converter element 9 free of the fluoropolymer. 7
  • a converter for example, a YAG phosphor
  • FIG. 4C shows a plated-through hole 21 which extends out of the reflection element 6 beyond the metal foil.
  • FIGS. 5A and 5B each show a schematic
  • the component geometries may be different.
  • the fluoropolymer is formed in a transparent manner and a reflective metal foil 61 is arranged as a border. As a result, a better light mixture can be generated because of the distance of the reflector.
  • FIG. 5B shows the less expensive and more compact variant.
  • no metal foil 61 is used as a metal frame, but only the fluoropolymer as
  • the fluoropolymer is here in particular reflective, for example white, shaped, so that the radiation emitted by the semiconductor chip 2 is reflected.
  • a transparent fluoropolymer and instead of a metal foil 61, a reflective fluoropolymer or plastic film may be used as the reflection element 6 (not shown here).
  • Fluoropolymer 7 can be adjusted by the degree of crystallization.
  • Figure 6A shows differential calorimetric curves (DSC) of one or several fluoropolymers.
  • the WR5775 ECA 3000 from the former DuPont was used.
  • the melting temperature of the fluoropolymer increases from 315 ° C to 322 ° C. It is a long-term growth to recognize, that is, the heat resistance increased by the formation of larger lamellae. growing
  • the reflectivity can be increased or adjusted by the temperature pretreatment.
  • Figure 6B shows the confirmation and the melting temperature for different fluoropolymers.
  • fluoropolymers can be applied by injection molding, injection compression or transfer molding. With the melting temperatures above, the fluoropolymers can be made into a film that can be laminated or applied by hot stamping or welding.
  • the PFA IV can be melted.
  • the so-called MOLDFLON III can be melted.
  • the modified PTFE II the polytetrafluoroethylene
  • the polytetrafluoroethylene I can be melted.
  • the PTFE is not by nature
  • Figure 7A shows a transmission curve in percent of different fluoropolymers at different
  • the data are based on measurements of a reflection element 6 consisting of the respective
  • Reference numeral IV curve shows the transmission of a fluoropolymer consisting of a combination of PFA-1 and MFA. It can be seen from the transmission curves that in particular the fluoropolymer IV has a high transparency even for smaller wavelengths, in particular for wavelengths of 200 to 400 nm, in comparison to the fluoropolymers I to III.
  • the MOLDFLON is a fluoropolymer available from ElringKlinger Kunststofftechnik.
  • FIG. 7B shows possible fluoropolymers according to
  • these are blue light and / or temperature stable.
  • Column II shows the chemical structural formulas.
  • the PTFE is a homopolymer
  • the MFA is a random copolymer
  • the PFA and FEP are each a random copolymer
  • the ECTFE is an alternating copolymer
  • the PVDF is a homopolymer
  • the ETFE is an alternating copolymer
  • the PCTFE is a homopolymer.
  • concentrations of comonomers in percent are in the Column III shown.
  • the column T m in ° C shows the
  • the pressing takes place at least in these
  • Substrate 1 are joined together.
  • Figure 7C shows the adhesive ETFE.
  • the PA has a terminal amine group.
  • the backbone of the ETFE attaches the terminal amine group at 260 ° C to 330 ° C, which leads to the formation of an imide bond.
  • FIGS. 8A to 10 each show a schematic
  • the reflection element 6 of Figure 8A is formed as a heterogeneous film reflector.
  • the reflection element 6 is formed as a multi-stage reflector. In the first layer, a large part of the light is reflected.
  • Reflection element 6 has a metal foil 61.
  • Metal foil 61 is formed of aluminum, for example.
  • the metal foil 61 is followed by a fluoropolymer film 62, in which scattering particles 10, such as titanium dioxide, are embedded.
  • the combination of the metal foil 61 and the scattering particles 10, such as titanium dioxide, in the plastic matrix or fluoropolymer foil 62 results in particular in an absolutely light-tight aging-stable and super-thin
  • FIG. 8B shows a scanning electron microscope
  • the scattering particles 10 have in particular a diameter of 300 nm.
  • the fluoropolymer film 62 has a light transmittance.
  • the transmission is about 10% with a layer thickness of 250 ym.
  • the proportion of scattering particles 10, such as titanium dioxide, is 25% in the fluoropolymer film as
  • FIG. 9A shows a reflection element 6, which in the
  • the reflection element 6 of FIG. 9B shows a plated-through hole 8 as well as a
  • Insulation 81 Alternatively, instead of a metal foil 61, a plastic film may also be used. Alternatively, instead of an aluminum metal foil and copper, silver
  • FIG. 9C shows a reflection element 6 with a
  • Metal foil 61 Another metal foil 63 and a
  • Fluoropolymer film 62 are embedded in the scattering particles 10.
  • the further metal foil 63 may be the same
  • metal foil 61 Have materials such as the metal foil 61.
  • the metal foil 61 and the further metal foil 63 may each comprise a different material.
  • FIG. 10 shows a schematic side view of a reflection element 6.
  • the reflection element 6 has a Plastic insulation with titanium dioxide 11 on, an adhesive bond 12 and on the back of a metal or a double-sided insulation on. Furthermore, the
  • Reflection element 6 a metal core 14.
  • scattering particles a variety of scattering materials can be used.
  • litter materials of the following table may be used.
  • the table shows plastics that can also be used in the reflection element 6.
  • FIGS. IIA and IIB each show reflection spectra. In each case, the reflection R in percent% as a function of the wavelength ⁇ in nm is shown.
  • Figure IIA shows the reflectance curve of aluminum, gold and silver, respectively, and
  • Figure IIB shows reflectance spectra of titania as anastas and rutile. I designates in FIG. IIB
  • Ultraviolet spectral range II referred to in Figure IIB the visible spectral range and III denotes the infrared spectral range in Figure IIB.
  • FIG. 12A shows the relative scattering force S in
  • FIG. 12B shows the difference between light diffraction (left) and light scattering (right) at scattering particles 10.
  • a thin ductile metal foil 61 in particular with a layer thickness of less than 50 ⁇ m, is used here.
  • the metal foil 61 acts in particular as
  • the inventors have found that by using a reflection element 6, side emission with a small wall thickness of the semiconductor chip can be avoided. In comparison, in standard designs, light is emitted through the thin sidewall.

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Abstract

L'invention concerne un procédé de fabrication d'un composant optoélectronique comprenant les étapes consistant à : A) produire un substrat (1), B) appliquer des puces de semi-conducteur (2) sur le substrat (1), les puces de semi-conducteur (2) étant espacées latéralement les unes des autres et étant aptes à émettre un rayonnement, C) produire un support composite (3), D) mettre en forme le support composite (3) au moyen d'un outil de formage (4), E) presser le support composite (3) et le substrat (1) de manière à former un élément réfléchissant (6), - l'élément réfléchissant (6) comprenant au moins un polymère fluoré (7) qui comporte le motif structural A de la formule générale suivante (I): - l'élément réfléchissant (6) étant disposé latéralement par rapport à la puce de semi-conducteur (2) et au moins par endroits sur la surface (22), opposée au substrat (1), de la puce de semi-conducteur (2), et F) séparer les puces de semi-conducteur (2).
PCT/EP2017/056819 2016-03-24 2017-03-22 Procédé de fabrication d'un composant optoélectronique et composant optoélectronique Ceased WO2017162736A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016105582.4 2016-03-24
DE102016105582.4A DE102016105582A1 (de) 2016-03-24 2016-03-24 Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement

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Publication Number Publication Date
WO2017162736A1 true WO2017162736A1 (fr) 2017-09-28

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WO (1) WO2017162736A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017085085A (ja) * 2015-10-30 2017-05-18 日亜化学工業株式会社 発光装置の製造方法
US11633508B2 (en) 2012-11-13 2023-04-25 Violet Defense Group, Inc. Device for increased ultraviolet exposure of fluids

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022102494A1 (de) 2022-02-02 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelementepackage und verfahren

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WO2009075530A2 (fr) * 2007-12-13 2009-06-18 Amoleds Co., Ltd. Semi-conducteur et son procédé de fabrication
DE102009036622A1 (de) * 2009-08-07 2011-02-10 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
EP2302708A2 (fr) * 2009-09-25 2011-03-30 Kabushiki Kaisha Toshiba Dispositif électroluminescent semi-conducteur et son procédé de fabrication
US20150050760A1 (en) * 2012-03-13 2015-02-19 Citizen Holdings Co., Ltd. Semiconductor light emitting device and method for manufacturing same

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US20070045893A1 (en) * 2005-08-26 2007-03-01 Himanshu Asthana Multilayer thermoplastic films and methods of making
DE102010046257A1 (de) * 2010-09-22 2012-03-22 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
JP2012084628A (ja) * 2010-10-08 2012-04-26 Sumitomo Electric Ind Ltd 白色反射フレキシブルプリント回路基板
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DE102015101598B4 (de) * 2015-02-04 2025-10-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierende optoelektronische Vorrichtung und Verfahren zur Herstellung einer strahlungsemittierenden optoelektronischen Vorrichtung

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Publication number Priority date Publication date Assignee Title
WO2009075530A2 (fr) * 2007-12-13 2009-06-18 Amoleds Co., Ltd. Semi-conducteur et son procédé de fabrication
DE102009036622A1 (de) * 2009-08-07 2011-02-10 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
EP2302708A2 (fr) * 2009-09-25 2011-03-30 Kabushiki Kaisha Toshiba Dispositif électroluminescent semi-conducteur et son procédé de fabrication
US20150050760A1 (en) * 2012-03-13 2015-02-19 Citizen Holdings Co., Ltd. Semiconductor light emitting device and method for manufacturing same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11633508B2 (en) 2012-11-13 2023-04-25 Violet Defense Group, Inc. Device for increased ultraviolet exposure of fluids
JP2017085085A (ja) * 2015-10-30 2017-05-18 日亜化学工業株式会社 発光装置の製造方法

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